Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (12996) > Seite 57 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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HN2D01JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA ESV Packaging: Tape & Reel (TR) Package / Case: SOT-553 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: ESV Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
Produkt ist nicht verfügbar |
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HN2D02FU(TE85L,F) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY GP 80V 80MA US6 |
Produkt ist nicht verfügbar |
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HN2D03F(TE85L,F) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY GP 400V 100MA SM6 |
Produkt ist nicht verfügbar |
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HN2S02JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY SCHOTTKY 40V ESV |
Produkt ist nicht verfügbar |
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HN2S03FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY SCHOTTKY 20V ES6 |
Produkt ist nicht verfügbar |
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HN2S03T(TE85L) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY SCHOTTKY 20V TESQ |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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HN3A51F(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP 120V 0.1A SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SM6 |
Produkt ist nicht verfügbar |
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HN3C51F-BL(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 120V 0.1A SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SM6 |
Produkt ist nicht verfügbar |
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HN3C51F-GR(TE85L,F | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 120V 0.1A SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SM6 |
Produkt ist nicht verfügbar |
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HN4B01JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP 50V 0.15A ESV PLN |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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HN4B04J(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 30V 0.5A SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SMV Part Status: Obsolete |
Produkt ist nicht verfügbar |
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HN4C51J(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 120V 0.1A SMV |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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JDP2S02ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: RF DIODE PIN 30V CST2 Packaging: Tape & Reel (TR) Package / Case: SOD-882 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: CST2 Part Status: Active Current - Max: 50 mA |
Produkt ist nicht verfügbar |
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JDP2S02AFS(TPL3) | Toshiba Semiconductor and Storage | Description: RF DIODE PIN 30V FSC |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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JDP2S08SC(TPL3) | Toshiba Semiconductor and Storage | Description: RF DIODE PIN 30V SC2 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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JDV2S10FS(TPL3) | Toshiba Semiconductor and Storage | Description: RF DIODE STANDARD 10V FSC |
Produkt ist nicht verfügbar |
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JDV2S41FS(TPL3) | Toshiba Semiconductor and Storage | Description: RF DIODE STANDARD 15V FSC |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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MT3S20TU(TE85L) | Toshiba Semiconductor and Storage | Description: TRANS RF NPN 7GHZ 80MA UFM |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RFM00U7U(TE85L,F) | Toshiba Semiconductor and Storage | Description: FET RF N-CH 20V 520MHZ USQ |
Produkt ist nicht verfügbar |
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RFM04U6P(TE12L,F) | Toshiba Semiconductor and Storage |
Description: RF MOSFET 6V PW-MINI Packaging: Tape & Reel (TR) Package / Case: TO-243AA Current Rating (Amps): 2A Mounting Type: Surface Mount Frequency: 470MHz Configuration: N-Channel Power - Output: 4.3W Gain: 13.3dB Technology: MOSFET Supplier Device Package: PW-MINI Voltage - Rated: 16 V Voltage - Test: 6 V Current - Test: 500 mA |
Produkt ist nicht verfügbar |
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RN1102MFV(TL3,T) | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN VESM |
Produkt ist nicht verfügbar |
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RN1103,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
Produkt ist nicht verfügbar |
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RN1104MFV,L3F | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.15W VESM |
Produkt ist nicht verfügbar |
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RN1105MFV,L3F | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.15W VESM |
Produkt ist nicht verfügbar |
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RN1105(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN SSM |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1106MFV(TL3,T) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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RN1108(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
Produkt ist nicht verfügbar |
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RN1109(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
Produkt ist nicht verfügbar |
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RN1112(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
Produkt ist nicht verfügbar |
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RN1113(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1114(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SSM |
Produkt ist nicht verfügbar |
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RN1115,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SSM |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1117(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SSM |
Produkt ist nicht verfügbar |
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RN1118(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
Produkt ist nicht verfügbar |
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RN1130MFV,L3F | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A VESM |
Produkt ist nicht verfügbar |
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RN1131MFV(TL3,T) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 100 kOhms |
Produkt ist nicht verfügbar |
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RN1303(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A USM |
Produkt ist nicht verfügbar |
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RN1310(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A USM |
Produkt ist nicht verfügbar |
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RN1507(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMV |
Produkt ist nicht verfügbar |
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RN1602(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.3W SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SM6 |
Produkt ist nicht verfügbar |
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RN1903,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: US6 |
Produkt ist nicht verfügbar |
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RN1904(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN US6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1906(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN1961FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
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RN1962FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
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RN1963FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
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RN1964FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
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RN1965FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.1W ES6 |
Produkt ist nicht verfügbar |
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RN1966FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN PREBIAS 0.1W ES6 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2506(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS 2PNP PREBIAS 0.3W SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMV |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN2711(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP PREBIAS 0.2W USV |
Produkt ist nicht verfügbar |
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RN4603(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.3W SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SM6 Part Status: Active |
Produkt ist nicht verfügbar |
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RN4606(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.3W SM6 Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz, 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SM6 Part Status: Active |
Produkt ist nicht verfügbar |
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RN4906(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN4981,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN4983(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN PNP 50V 100MA US6 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN4984(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN4985,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP PREBIAS 0.2W US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 |
Produkt ist nicht verfügbar |
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RN4986(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
Produkt ist nicht verfügbar |
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RN4988(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP PREBIAS 0.2W US6 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
HN2D01JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ESV
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ESV
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
HN2D02FU(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Description: DIODE ARRAY GP 80V 80MA US6
Produkt ist nicht verfügbar
HN2D03F(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA SM6
Description: DIODE ARRAY GP 400V 100MA SM6
Produkt ist nicht verfügbar
HN2S02JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 40V ESV
Description: DIODE ARRAY SCHOTTKY 40V ESV
Produkt ist nicht verfügbar
HN2S03FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 20V ES6
Description: DIODE ARRAY SCHOTTKY 20V ES6
Produkt ist nicht verfügbar
HN2S03T(TE85L) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 20V TESQ
Description: DIODE ARRAY SCHOTTKY 20V TESQ
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)HN3A51F(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Description: TRANS 2PNP 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Produkt ist nicht verfügbar
HN3C51F-BL(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Description: TRANS 2NPN 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Produkt ist nicht verfügbar
HN3C51F-GR(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Description: TRANS 2NPN 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Produkt ist nicht verfügbar
HN4B01JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ESV PLN
Description: TRANS NPN/PNP 50V 0.15A ESV PLN
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)HN4B04J(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SMV
Part Status: Obsolete
Description: TRANS NPN/PNP 30V 0.5A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SMV
Part Status: Obsolete
Produkt ist nicht verfügbar
HN4C51J(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 120V 0.1A SMV
Description: TRANS 2NPN 120V 0.1A SMV
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)JDP2S02ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: CST2
Part Status: Active
Current - Max: 50 mA
Description: RF DIODE PIN 30V CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: CST2
Part Status: Active
Current - Max: 50 mA
Produkt ist nicht verfügbar
JDP2S02AFS(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V FSC
Description: RF DIODE PIN 30V FSC
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)JDP2S08SC(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V SC2
Description: RF DIODE PIN 30V SC2
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)JDV2S10FS(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE STANDARD 10V FSC
Description: RF DIODE STANDARD 10V FSC
Produkt ist nicht verfügbar
JDV2S41FS(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE STANDARD 15V FSC
Description: RF DIODE STANDARD 15V FSC
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)MT3S20TU(TE85L) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 7GHZ 80MA UFM
Description: TRANS RF NPN 7GHZ 80MA UFM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RFM00U7U(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: FET RF N-CH 20V 520MHZ USQ
Description: FET RF N-CH 20V 520MHZ USQ
Produkt ist nicht verfügbar
RFM04U6P(TE12L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 2A
Mounting Type: Surface Mount
Frequency: 470MHz
Configuration: N-Channel
Power - Output: 4.3W
Gain: 13.3dB
Technology: MOSFET
Supplier Device Package: PW-MINI
Voltage - Rated: 16 V
Voltage - Test: 6 V
Current - Test: 500 mA
Description: RF MOSFET 6V PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 2A
Mounting Type: Surface Mount
Frequency: 470MHz
Configuration: N-Channel
Power - Output: 4.3W
Gain: 13.3dB
Technology: MOSFET
Supplier Device Package: PW-MINI
Voltage - Rated: 16 V
Voltage - Test: 6 V
Current - Test: 500 mA
Produkt ist nicht verfügbar
RN1102MFV(TL3,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN VESM
Description: TRANSISTOR NPN VESM
Produkt ist nicht verfügbar
RN1103,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1104MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W VESM
Description: TRANS PREBIAS NPN 0.15W VESM
Produkt ist nicht verfügbar
RN1105MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W VESM
Description: TRANS PREBIAS NPN 0.15W VESM
Produkt ist nicht verfügbar
RN1105(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN SSM
Description: TRANSISTOR NPN SSM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN1106MFV(TL3,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN1108(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1109(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1112(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1113(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.072 EUR |
RN1114(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
RN1115,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN1117(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
RN1118(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1130MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Produkt ist nicht verfügbar
RN1131MFV(TL3,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
RN1303(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
RN1310(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
RN1507(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Produkt ist nicht verfügbar
RN1602(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
Produkt ist nicht verfügbar
RN1903,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN1904(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN US6
Description: TRANSISTOR NPN US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN1906(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Description: TRANS 2NPN PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN1961FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1962FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1963FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1964FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1965FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1966FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)RN2506(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
RN2711(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W USV
Description: TRANS 2PNP PREBIAS 0.2W USV
Produkt ist nicht verfügbar
RN4603(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
RN4606(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
RN4906(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4981,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)RN4983(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN PNP 50V 100MA US6
Description: TRANS NPN PNP 50V 100MA US6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)RN4984(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4985,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN4986(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4988(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)