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HN2D01JE(TE85L,F) HN2D01JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=21819&prodName=HN2D01JE Description: DIODE ARRAY GP 80V 100MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ESV
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
HN2D02FU(TE85L,F) HN2D02FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2D02FU Description: DIODE ARRAY GP 80V 80MA US6
Produkt ist nicht verfügbar
HN2D03F(TE85L,F) HN2D03F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2D03F Description: DIODE ARRAY GP 400V 100MA SM6
Produkt ist nicht verfügbar
HN2S02JE(TE85L,F) HN2S02JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2S02JE Description: DIODE ARRAY SCHOTTKY 40V ESV
Produkt ist nicht verfügbar
HN2S03FE(TE85L,F) HN2S03FE(TE85L,F) Toshiba Semiconductor and Storage HN2S03FE.pdf Description: DIODE ARRAY SCHOTTKY 20V ES6
Produkt ist nicht verfügbar
HN2S03T(TE85L) HN2S03T(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2S03T Description: DIODE ARRAY SCHOTTKY 20V TESQ
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
HN3A51F(TE85L,F) HN3A51F(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS 2PNP 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Produkt ist nicht verfügbar
HN3C51F-BL(TE85L,F HN3C51F-BL(TE85L,F Toshiba Semiconductor and Storage HN3C51F.pdf Description: TRANS 2NPN 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Produkt ist nicht verfügbar
HN3C51F-GR(TE85L,F HN3C51F-GR(TE85L,F Toshiba Semiconductor and Storage HN3C51F.pdf Description: TRANS 2NPN 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Produkt ist nicht verfügbar
HN4B01JE(TE85L,F) HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22310&prodName=HN4B01JE Description: TRANS NPN/PNP 50V 0.15A ESV PLN
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
HN4B04J(TE85L,F) HN4B04J(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS NPN/PNP 30V 0.5A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SMV
Part Status: Obsolete
Produkt ist nicht verfügbar
HN4C51J(TE85L,F) HN4C51J(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN4C51J Description: TRANS 2NPN 120V 0.1A SMV
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
JDP2S02ACT(TPL3) JDP2S02ACT(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=22501&prodName=JDP2S02ACT Description: RF DIODE PIN 30V CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: CST2
Part Status: Active
Current - Max: 50 mA
Produkt ist nicht verfügbar
JDP2S02AFS(TPL3) JDP2S02AFS(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=2891&prodName=JDP2S02AFS Description: RF DIODE PIN 30V FSC
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
JDP2S08SC(TPL3) JDP2S08SC(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=6892&prodName=JDP2S08SC Description: RF DIODE PIN 30V SC2
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
JDV2S10FS(TPL3) JDV2S10FS(TPL3) Toshiba Semiconductor and Storage JDV2S10FS_datasheet_en_20140301.pdf?did=6207&prodName=JDV2S10FS Description: RF DIODE STANDARD 10V FSC
Produkt ist nicht verfügbar
JDV2S41FS(TPL3) JDV2S41FS(TPL3) Toshiba Semiconductor and Storage docget.jsp?did=589&prodName=JDV2S41FS Description: RF DIODE STANDARD 15V FSC
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
MT3S20TU(TE85L) MT3S20TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=MT3S20TU Description: TRANS RF NPN 7GHZ 80MA UFM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RFM00U7U(TE85L,F) RFM00U7U(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RFM00U7U Description: FET RF N-CH 20V 520MHZ USQ
Produkt ist nicht verfügbar
RFM04U6P(TE12L,F) RFM04U6P(TE12L,F) Toshiba Semiconductor and Storage RFM04U6P_datasheet_en_20140301.pdf?did=1927&prodName=RFM04U6P Description: RF MOSFET 6V PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 2A
Mounting Type: Surface Mount
Frequency: 470MHz
Configuration: N-Channel
Power - Output: 4.3W
Gain: 13.3dB
Technology: MOSFET
Supplier Device Package: PW-MINI
Voltage - Rated: 16 V
Voltage - Test: 6 V
Current - Test: 500 mA
Produkt ist nicht verfügbar
RN1102MFV(TL3,T) RN1102MFV(TL3,T) Toshiba Semiconductor and Storage 21311.pdf Description: TRANSISTOR NPN VESM
Produkt ist nicht verfügbar
RN1103,LF(CT RN1103,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1101 Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1104MFV,L3F RN1104MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 0.15W VESM
Produkt ist nicht verfügbar
RN1105MFV,L3F RN1105MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1104MFV Description: TRANS PREBIAS NPN 0.15W VESM
Produkt ist nicht verfügbar
RN1105(T5L,F,T) RN1105(T5L,F,T) Toshiba Semiconductor and Storage 6039.pdf Description: TRANSISTOR NPN SSM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN1106MFV(TL3,T) RN1106MFV(TL3,T) Toshiba Semiconductor and Storage RN110xMFV.pdf Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN1108(T5L,F,T) RN1108(T5L,F,T) Toshiba Semiconductor and Storage RN1107,8,9.pdf Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1109(T5L,F,T) RN1109(T5L,F,T) Toshiba Semiconductor and Storage RN1107,8,9.pdf Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1112(T5L,F,T) RN1112(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1112 Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1113(T5L,F,T) RN1113(T5L,F,T) Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.072 EUR
Mindestbestellmenge: 3000
RN1114(T5L,F,T) RN1114(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1115 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
RN1115,LF(CT RN1115,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1115 Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN1117(T5L,F,T) RN1117(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1115 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
RN1118(T5L,F,T) RN1118(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1114 Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1130MFV,L3F RN1130MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=949&prodName=RN1130MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Produkt ist nicht verfügbar
RN1131MFV(TL3,T) RN1131MFV(TL3,T) Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
RN1303(TE85L,F) RN1303(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1302 Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
RN1310(TE85L,F) RN1310(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18781&prodName=RN1310 Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
RN1507(TE85L,F) RN1507(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Produkt ist nicht verfügbar
RN1602(TE85L,F) RN1602(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
Produkt ist nicht verfügbar
RN1903,LF(CT RN1903,LF(CT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN1904(T5L,F,T) RN1904(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902 Description: TRANSISTOR NPN US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN1906(T5L,F,T) RN1906(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN1961FE(TE85L,F) RN1961FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1961FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1962FE(TE85L,F) RN1962FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1963FE(TE85L,F) RN1963FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1964FE(TE85L,F) RN1964FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1965FE(TE85L,F) RN1965FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1966FE(TE85L,F) RN1966FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
RN2506(TE85L,F) RN2506(TE85L,F) Toshiba Semiconductor and Storage RN2501_datasheet_en_20191119.pdf?did=18887&prodName=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
RN2711(TE85L,F) RN2711(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18905&prodName=RN2711 Description: TRANS 2PNP PREBIAS 0.2W USV
Produkt ist nicht verfügbar
RN4603(TE85L,F) RN4603(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18926&prodName=RN4603 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
RN4606(TE85L,F) RN4606(TE85L,F) Toshiba Semiconductor and Storage RN4606_datasheet_en_20191101.pdf?did=18932&prodName=RN4606 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
RN4906(T5L,F,T) RN4906(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4906 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4981,LF(CT RN4981,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4981 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
RN4983(T5L,F,T) RN4983(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4983 Description: TRANS NPN PNP 50V 100MA US6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
RN4984(T5L,F,T) RN4984(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4984 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4985,LF(CT RN4985,LF(CT Toshiba Semiconductor and Storage RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN4986(T5L,F,T) RN4986(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4986 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4988(T5L,F,T) RN4988(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4988 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
HN2D01JE(TE85L,F) docget.jsp?did=21819&prodName=HN2D01JE
HN2D01JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ESV
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
HN2D02FU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=HN2D02FU
HN2D02FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Produkt ist nicht verfügbar
HN2D03F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=HN2D03F
HN2D03F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA SM6
Produkt ist nicht verfügbar
HN2S02JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=HN2S02JE
HN2S02JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 40V ESV
Produkt ist nicht verfügbar
HN2S03FE(TE85L,F) HN2S03FE.pdf
HN2S03FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 20V ES6
Produkt ist nicht verfügbar
HN2S03T(TE85L) docget.jsp?type=datasheet&lang=en&pid=HN2S03T
HN2S03T(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 20V TESQ
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
HN3A51F(TE85L,F)
HN3A51F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Produkt ist nicht verfügbar
HN3C51F-BL(TE85L,F HN3C51F.pdf
HN3C51F-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Produkt ist nicht verfügbar
HN3C51F-GR(TE85L,F HN3C51F.pdf
HN3C51F-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 120V 0.1A SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SM6
Produkt ist nicht verfügbar
HN4B01JE(TE85L,F) docget.jsp?did=22310&prodName=HN4B01JE
HN4B01JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ESV PLN
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
HN4B04J(TE85L,F)
HN4B04J(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SMV
Part Status: Obsolete
Produkt ist nicht verfügbar
HN4C51J(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=HN4C51J
HN4C51J(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 120V 0.1A SMV
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
JDP2S02ACT(TPL3) docget.jsp?did=22501&prodName=JDP2S02ACT
JDP2S02ACT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: CST2
Part Status: Active
Current - Max: 50 mA
Produkt ist nicht verfügbar
JDP2S02AFS(TPL3) docget.jsp?did=2891&prodName=JDP2S02AFS
JDP2S02AFS(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V FSC
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
JDP2S08SC(TPL3) docget.jsp?did=6892&prodName=JDP2S08SC
JDP2S08SC(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V SC2
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
JDV2S10FS(TPL3) JDV2S10FS_datasheet_en_20140301.pdf?did=6207&prodName=JDV2S10FS
JDV2S10FS(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE STANDARD 10V FSC
Produkt ist nicht verfügbar
JDV2S41FS(TPL3) docget.jsp?did=589&prodName=JDV2S41FS
JDV2S41FS(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE STANDARD 15V FSC
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
MT3S20TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=MT3S20TU
MT3S20TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 7GHZ 80MA UFM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RFM00U7U(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RFM00U7U
RFM00U7U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: FET RF N-CH 20V 520MHZ USQ
Produkt ist nicht verfügbar
RFM04U6P(TE12L,F) RFM04U6P_datasheet_en_20140301.pdf?did=1927&prodName=RFM04U6P
RFM04U6P(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Current Rating (Amps): 2A
Mounting Type: Surface Mount
Frequency: 470MHz
Configuration: N-Channel
Power - Output: 4.3W
Gain: 13.3dB
Technology: MOSFET
Supplier Device Package: PW-MINI
Voltage - Rated: 16 V
Voltage - Test: 6 V
Current - Test: 500 mA
Produkt ist nicht verfügbar
RN1102MFV(TL3,T) 21311.pdf
RN1102MFV(TL3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN VESM
Produkt ist nicht verfügbar
RN1103,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1101
RN1103,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1104MFV,L3F docget.jsp?did=5879&prodName=RN1104MFV
RN1104MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W VESM
Produkt ist nicht verfügbar
RN1105MFV,L3F docget.jsp?did=5879&prodName=RN1104MFV
RN1105MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W VESM
Produkt ist nicht verfügbar
RN1105(T5L,F,T) 6039.pdf
RN1105(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN SSM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN1106MFV(TL3,T) RN110xMFV.pdf
RN1106MFV(TL3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN1108(T5L,F,T) RN1107,8,9.pdf
RN1108(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1109(T5L,F,T) RN1107,8,9.pdf
RN1109(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1112(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1112
RN1112(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1113(T5L,F,T)
RN1113(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.072 EUR
Mindestbestellmenge: 3000
RN1114(T5L,F,T) docget.jsp?did=18763&prodName=RN1115
RN1114(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
RN1115,LF(CT docget.jsp?did=18763&prodName=RN1115
RN1115,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN1117(T5L,F,T) docget.jsp?did=18763&prodName=RN1115
RN1117(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
RN1118(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1114
RN1118(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1130MFV,L3F docget.jsp?did=949&prodName=RN1130MFV
RN1130MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Produkt ist nicht verfügbar
RN1131MFV(TL3,T)
RN1131MFV(TL3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
RN1303(TE85L,F) docget.jsp?did=18776&prodName=RN1302
RN1303(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
RN1310(TE85L,F) docget.jsp?did=18781&prodName=RN1310
RN1310(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
RN1507(TE85L,F)
RN1507(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
Produkt ist nicht verfügbar
RN1602(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1602(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
Produkt ist nicht verfügbar
RN1903,LF(CT RN190x.pdf
RN1903,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN1904(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1902
RN1904(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN1906(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1906(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN1961FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1961FE
RN1961FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1962FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1962FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1963FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1963FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1964FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1964FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1965FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1965FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
RN1966FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1966FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
RN2506(TE85L,F) RN2501_datasheet_en_20191119.pdf?did=18887&prodName=RN2501
RN2506(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
Mindestbestellmenge: 3000
RN2711(TE85L,F) docget.jsp?did=18905&prodName=RN2711
RN2711(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W USV
Produkt ist nicht verfügbar
RN4603(TE85L,F) docget.jsp?did=18926&prodName=RN4603
RN4603(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
RN4606(TE85L,F) RN4606_datasheet_en_20191101.pdf?did=18932&prodName=RN4606
RN4606(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
RN4906(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4906
RN4906(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4981,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4981
RN4981,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
RN4983(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4983
RN4983(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN PNP 50V 100MA US6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
RN4984(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4984
RN4984(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4985,LF(CT RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985
RN4985,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN4986(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4986
RN4986(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4988(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4988
RN4988(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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