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TPN1600ANH,L1Q TPN1600ANH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=13538&prodName=TPN1600ANH Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 1426 Stücke:
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13+1.69 EUR
100+1.12 EUR
500+0.88 EUR
1000+0.8 EUR
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TP86R203NL,LQ TP86R203NL,LQ Toshiba Semiconductor and Storage docget.jsp?did=14088&prodName=TP86R203NL Description: MOSFET N CH 30V 19A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 12694 Stücke:
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12+1.89 EUR
100+1.26 EUR
500+1 EUR
1000+0.9 EUR
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TPH11003NL,LQ TPH11003NL,LQ Toshiba Semiconductor and Storage docget.jsp?did=14042&prodName=TPH11003NL Description: MOSFET N CH 30V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 970 Stücke:
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TK20G60W,RVQ TK20G60W,RVQ Toshiba Semiconductor and Storage TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W Description: MOSFET N CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 1960 Stücke:
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TK12V60W,LVQ TK12V60W,LVQ Toshiba Semiconductor and Storage TK12V60W_datasheet_en_20150203.pdf?did=14171&prodName=TK12V60W Description: MOSFET N-CH 600V 11.5A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK16V60W,LVQ TK16V60W,LVQ Toshiba Semiconductor and Storage TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W,LVQ TK20V60W,LVQ Toshiba Semiconductor and Storage TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
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TK31V60W,LVQ TK31V60W,LVQ Toshiba Semiconductor and Storage TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2455 Stücke:
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10+13.16 EUR
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TPN11003NL,LQ TPN11003NL,LQ Toshiba Semiconductor and Storage docget.jsp?did=14013&prodName=TPN11003NL Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 5779 Stücke:
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100+0.92 EUR
500+0.71 EUR
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TPN8R903NL,LQ TPN8R903NL,LQ Toshiba Semiconductor and Storage docget.jsp?did=14026&prodName=TPN8R903NL Description: MOSFET N-CH 30V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 7081 Stücke:
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TPN6R003NL,LQ TPN6R003NL,LQ Toshiba Semiconductor and Storage docget.jsp?did=14069&prodName=TPN6R003NL Description: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2724 Stücke:
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7+3 EUR
12+1.89 EUR
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500+1 EUR
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TPH8R903NL,LQ TPH8R903NL,LQ Toshiba Semiconductor and Storage TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL Description: MOSFET N CH 30V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3150 Stücke:
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500+0.55 EUR
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TCK104G,LF TCK104G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
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TCK105G,LF TCK105G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
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SSM6J771G,LF SSM6J771G,LF Toshiba Semiconductor and Storage docget.jsp?did=14222&prodName=SSM6J771G Description: MOSFET P-CH 20V 5A 6WCSP
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCK104G,LF TCK104G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
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TCK105G,LF TCK105G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
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SSM6J771G,LF SSM6J771G,LF Toshiba Semiconductor and Storage docget.jsp?did=14222&prodName=SSM6J771G Description: MOSFET P-CH 20V 5A 6WCSP
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 1012 Stücke:
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500+0.58 EUR
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TCK104G,LF TCK104G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
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TCK105G,LF TCK105G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
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TB6585AFTGC8,EL TB6585AFTGC8,EL Toshiba Semiconductor and Storage TB6585AFTG_datasheet_en_20130902.pdf?did=14351&prodName=TB6585AFTG Description: IC MOTOR DRIVER 4.5V-42V 48QFN
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 48-QFN (7x7)
Voltage - Load: 4.5V ~ 42V
Technology: Bi-CMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 42V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TB62771FTG,8,EL TB62771FTG,8,EL Toshiba Semiconductor and Storage TB62771FTG_datasheet_en_20130523.pdf?did=14147&prodName=TB62771FTG Description: IC LED DRV RGLTR PWM 20WQFN
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 4.75V
Dimming: PWM
Supplier Device Package: 20-WQFN (4x4)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 200kHz ~ 2MHz
Number of Outputs: 4
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Voltage - Output: 45V
Package / Case: 20-WFQFN Exposed Pad
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TB62779FNG,EL TB62779FNG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62779FNG Description: IC LED DRVR LIN DIM 40MA 20SSOP
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TB62781FNG,8,EL TB62781FNG,8,EL Toshiba Semiconductor and Storage TB62781FNG.pdf Description: IC LED DRIVER LINEAR 40MA 20SSOP
Produkt ist nicht verfügbar
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TB62802AFG,8,EL TB62802AFG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=11314&prodName=TB62802AFG Description: IC CCD CLOCK DRIVER 18HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 4.7V ~ 5.5V
Applications: CCD Driver
Supplier Device Package: 16-HSOP
Part Status: Active
Produkt ist nicht verfügbar
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TB62D612FTG,EL TB62D612FTG,EL Toshiba Semiconductor and Storage TB62D612FTG_datasheet_en_20210129.pdf?did=13449&prodName=TB62D612FTG Description: IC LED DRVR LIN PWM 40MA 36WQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 36-WQFN (6x6)
Dimming: Analog, I2C, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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TB62720FG(8FFNICHI Toshiba Semiconductor and Storage Description: IC LED DVR 16CH CC 64HQFP
Produkt ist nicht verfügbar
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TB6585AFTGC8,EL TB6585AFTGC8,EL Toshiba Semiconductor and Storage TB6585AFTG_datasheet_en_20130902.pdf?did=14351&prodName=TB6585AFTG Description: IC MOTOR DRIVER 4.5V-42V 48QFN
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 48-QFN (7x7)
Voltage - Load: 4.5V ~ 42V
Technology: Bi-CMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 42V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TB62771FTG,8,EL TB62771FTG,8,EL Toshiba Semiconductor and Storage TB62771FTG_datasheet_en_20130523.pdf?did=14147&prodName=TB62771FTG Description: IC LED DRV RGLTR PWM 20WQFN
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 4.75V
Dimming: PWM
Supplier Device Package: 20-WQFN (4x4)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 200kHz ~ 2MHz
Voltage - Output: 45V
Package / Case: 20-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Outputs: 4
Mounting Type: Surface Mount
auf Bestellung 12421 Stücke:
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TB62779FNG,EL TB62779FNG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62779FNG Description: IC LED DRVR LIN DIM 40MA 20SSOP
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TB62781FNG,8,EL TB62781FNG,8,EL Toshiba Semiconductor and Storage TB62781FNG.pdf Description: IC LED DRIVER LINEAR 40MA 20SSOP
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TB62802AFG,8,EL TB62802AFG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=11314&prodName=TB62802AFG Description: IC CCD CLOCK DRIVER 18HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 4.7V ~ 5.5V
Applications: CCD Driver
Supplier Device Package: 16-HSOP
Part Status: Active
Produkt ist nicht verfügbar
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TB62D612FTG,EL TB62D612FTG,EL Toshiba Semiconductor and Storage TB62D612FTG_datasheet_en_20210129.pdf?did=13449&prodName=TB62D612FTG Description: IC LED DRVR LIN PWM 40MA 36WQFN
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 36-WQFN (6x6)
Dimming: Analog, I2C, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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TB62779FNG,EL TB62779FNG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62779FNG Description: IC LED DRVR LIN DIM 40MA 20SSOP
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SSM3J114TU(TE85L) SSM3J114TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J114TU Description: MOSFET P-CH 20V 1.8A UFM
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SSM3J114TU(TE85L) SSM3J114TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J114TU Description: MOSFET P-CH 20V 1.8A UFM
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SSM3J114TU(TE85L) SSM3J114TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J114TU Description: MOSFET P-CH 20V 1.8A UFM
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TC35661SBG-501,EL TC35661SBG-501,EL Toshiba Semiconductor and Storage TC35661SBG-501_E_rev100_Oct_2013_Overview_Specification.pdf Description: IC LSI BLUETOOTH SPP BLE 64PIN
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TC35661SBG-203,EL TC35661SBG-203,EL Toshiba Semiconductor and Storage Description: IC RF TXRX BLUETOOTH 64FBGA
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TC35661SBG-007,EL TC35661SBG-007,EL Toshiba Semiconductor and Storage Description: IC RF TXRX BLUETOOTH 64FBGA
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TC32306FTG,EL TC32306FTG,EL Toshiba Semiconductor and Storage TC32306FTG_datasheet_en_20151001.pdf?did=13607&prodName=TC32306FTG Description: IC RF TXRX ISM<1GHZ 36QFN
Packaging: Tape & Reel (TR)
Package / Case: 36-VFQFN Exposed Pad
Sensitivity: -121dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2V ~ 3.3V, 2.4V ~ 5.5V
Power - Output: 10dBm
Current - Receiving: 9.2mA ~ 11.1mA
Current - Transmitting: 4.8mA ~ 12mA
Supplier Device Package: 36-QFN (5.3x5.3)
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC35661SBG-501,EL TC35661SBG-501,EL Toshiba Semiconductor and Storage TC35661SBG-501_E_rev100_Oct_2013_Overview_Specification.pdf Description: IC LSI BLUETOOTH SPP BLE 64PIN
auf Bestellung 1990 Stücke:
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TC35661SBG-203,EL TC35661SBG-203,EL Toshiba Semiconductor and Storage Description: IC RF TXRX BLUETOOTH 64FBGA
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TC32306FTG,EL TC32306FTG,EL Toshiba Semiconductor and Storage TC32306FTG_datasheet_en_20151001.pdf?did=13607&prodName=TC32306FTG Description: IC RF TXRX ISM<1GHZ 36QFN
Packaging: Cut Tape (CT)
Package / Case: 36-VFQFN Exposed Pad
Sensitivity: -121dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2V ~ 3.3V, 2.4V ~ 5.5V
Power - Output: 10dBm
Current - Receiving: 9.2mA ~ 11.1mA
Current - Transmitting: 4.8mA ~ 12mA
Supplier Device Package: 36-QFN (5.3x5.3)
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
auf Bestellung 1999 Stücke:
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100+5.15 EUR
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TC35661SBG-501,EL TC35661SBG-501,EL Toshiba Semiconductor and Storage TC35661SBG-501_E_rev100_Oct_2013_Overview_Specification.pdf Description: IC LSI BLUETOOTH SPP BLE 64PIN
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2SK2145-GR(TE85L,F 2SK2145-GR(TE85L,F Toshiba Semiconductor and Storage 2SK2145_datasheet_en_20140301.pdf?did=19704&prodName=2SK2145 Description: JFET 2N-CH SMV
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SMV
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: 2 N-Channel (Dual)
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SK2145-Y(TE85L,F) 2SK2145-Y(TE85L,F) Toshiba Semiconductor and Storage 2SK2145_datasheet_en_20140301.pdf?did=19704&prodName=2SK2145 Description: JFET 2N-CH SMV
Supplier Device Package: SMV
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: 2 N-Channel (Dual)
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Power - Max: 300 mW
Part Status: Active
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3000+0.51 EUR
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2SK3320-BL(TE85L,F 2SK3320-BL(TE85L,F Toshiba Semiconductor and Storage 2SK3320_datasheet_en_20140301.pdf?did=19706&prodName=2SK3320 Description: JFET N-CH USV
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: USV
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
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2SK3320-GR(TE85L,F 2SK3320-GR(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=2SK3320 Description: JFET DUAL N-CH USV
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2SK879-GR(TE85L,F) 2SK879-GR(TE85L,F) Toshiba Semiconductor and Storage 2SK879_datasheet_en_20140301.pdf?did=19697&prodName=2SK879 Description: JFET N-CH USM
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: USM
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
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9000+0.23 EUR
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2SK879-Y(TE85L,F) 2SK879-Y(TE85L,F) Toshiba Semiconductor and Storage 2SK879_datasheet_en_20140301.pdf?did=19697&prodName=2SK879 Description: JFET N-CH 0.1W USM
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: USM
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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3SK292(TE85R,F) 3SK292(TE85R,F) Toshiba Semiconductor and Storage docget.jsp?did=17966&prodName=3SK292 Description: MOSFET N-CH 12.5 30MA SMQ
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3SK294(TE85L,F) 3SK294(TE85L,F) Toshiba Semiconductor and Storage Description: RF MOSFET 6V USQ
Current Rating (Amps): 30mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Current - Test: 10 mA
Voltage - Test: 6 V
Voltage - Rated: 12.5 V
Part Status: Not For New Designs
Supplier Device Package: USQ
Noise Figure: 1.4dB
Technology: MOSFET (Metal Oxide)
Gain: 26dB
Configuration: N-Channel
Frequency: 500MHz
Mounting Type: Surface Mount
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3000+0.21 EUR
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TC7LX1102FK,LF Toshiba Semiconductor and Storage docget.jsp?pid=TC7LX1102FK&lang=en&type=datasheet Description: LEVEL SHIFTER 8BIT US8
Produkt ist nicht verfügbar
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TC7MBL3125CFT(EL) TC7MBL3125CFT(EL) Toshiba Semiconductor and Storage docget.jsp?did=57313&prodName=TC7MBL3125CFK Description: IC BUS SWITCH 4 X 1:1 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
Produkt ist nicht verfügbar
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TC7MBL3245CFT(EL) TC7MBL3245CFT(EL) Toshiba Semiconductor and Storage docget.jsp?did=11911&prodName=TC7MBL3245CFT Description: IC BUS SWITCH 8 X 1:1 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
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2000+0.36 EUR
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TC7MBL3253CFT(EL) TC7MBL3253CFT(EL) Toshiba Semiconductor and Storage docget.jsp?did=22003&prodName=TC7MBL3253CFT Description: IC MUX/DEMUX 2 X 4:1 16TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 2 x 4:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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TC7MPB9326FT-EL TC7MPB9326FT-EL Toshiba Semiconductor and Storage docget.jsp?pid=TC7MPB9326FT&lang=en&type=datasheet Description: IC BUS SWITCH LOCAP DUAL 14TSSOP
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TC7MPB9327FT-EL TC7MPB9327FT-EL Toshiba Semiconductor and Storage docget.jsp?pid=TC7MPB9326FT&lang=en&type=datasheet Description: IC BUS SWITCH LOCAP DUAL 14TSSOP
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TC7SB66CFU,LF TC7SB66CFU,LF Toshiba Semiconductor and Storage docget.jsp?pid=TC7SB66CFU&lang=en&type=datasheet Description: IC BUS SWITCH LOCAP USV
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TPN1600ANH,L1Q docget.jsp?did=13538&prodName=TPN1600ANH
TPN1600ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 1426 Stücke:
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8+2.68 EUR
13+1.69 EUR
100+1.12 EUR
500+0.88 EUR
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TP86R203NL,LQ docget.jsp?did=14088&prodName=TP86R203NL
TP86R203NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 19A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 12694 Stücke:
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7+3 EUR
12+1.89 EUR
100+1.26 EUR
500+1 EUR
1000+0.9 EUR
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TPH11003NL,LQ docget.jsp?did=14042&prodName=TPH11003NL
TPH11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
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12+1.8 EUR
19+1.12 EUR
100+0.73 EUR
500+0.56 EUR
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TK20G60W,RVQ TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W
TK20G60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 1960 Stücke:
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4+6.97 EUR
10+4.56 EUR
100+3.18 EUR
500+2.59 EUR
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TK12V60W,LVQ TK12V60W_datasheet_en_20150203.pdf?did=14171&prodName=TK12V60W
TK12V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK16V60W,LVQ TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W
TK16V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W,LVQ TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W
TK20V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
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TK31V60W,LVQ TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W
TK31V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.15 EUR
10+13.16 EUR
100+9.79 EUR
500+9.04 EUR
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TPN11003NL,LQ docget.jsp?did=14013&prodName=TPN11003NL
TPN11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 5779 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.23 EUR
15+1.39 EUR
100+0.92 EUR
500+0.71 EUR
1000+0.65 EUR
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TPN8R903NL,LQ docget.jsp?did=14026&prodName=TPN8R903NL
TPN8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 7081 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
18+1.21 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
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TPN6R003NL,LQ docget.jsp?did=14069&prodName=TPN6R003NL
TPN6R003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2724 Stücke:
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AnzahlPrivatkunde
7+3 EUR
12+1.89 EUR
100+1.26 EUR
500+1 EUR
1000+0.9 EUR
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TPH8R903NL,LQ TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL
TPH8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3150 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
20+1.07 EUR
100+0.7 EUR
500+0.55 EUR
1000+0.52 EUR
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TCK104G,LF docget.jsp?did=14030&prodName=TCK104G
TCK104G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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TCK105G,LF docget.jsp?did=14030&prodName=TCK104G
TCK105G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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SSM6J771G,LF docget.jsp?did=14222&prodName=SSM6J771G
SSM6J771G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A 6WCSP
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCK104G,LF docget.jsp?did=14030&prodName=TCK104G
TCK104G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 4993 Stücke:
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TCK105G,LF docget.jsp?did=14030&prodName=TCK104G
TCK105G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 6000 Stücke:
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SSM6J771G,LF docget.jsp?did=14222&prodName=SSM6J771G
SSM6J771G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5A 6WCSP
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.84 EUR
19+1.15 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
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TCK104G,LF docget.jsp?did=14030&prodName=TCK104G
TCK104G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 4993 Stücke:
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TCK105G,LF docget.jsp?did=14030&prodName=TCK104G
TCK105G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 6000 Stücke:
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TB6585AFTGC8,EL TB6585AFTG_datasheet_en_20130902.pdf?did=14351&prodName=TB6585AFTG
TB6585AFTGC8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 4.5V-42V 48QFN
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 48-QFN (7x7)
Voltage - Load: 4.5V ~ 42V
Technology: Bi-CMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 42V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TB62771FTG,8,EL TB62771FTG_datasheet_en_20130523.pdf?did=14147&prodName=TB62771FTG
TB62771FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRV RGLTR PWM 20WQFN
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 4.75V
Dimming: PWM
Supplier Device Package: 20-WQFN (4x4)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 200kHz ~ 2MHz
Number of Outputs: 4
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Voltage - Output: 45V
Package / Case: 20-WFQFN Exposed Pad
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.24 EUR
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TB62779FNG,EL docget.jsp?type=datasheet&lang=en&pid=TB62779FNG
TB62779FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN DIM 40MA 20SSOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 2000 Stücke
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TB62781FNG,8,EL TB62781FNG.pdf
TB62781FNG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Produkt ist nicht verfügbar
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TB62802AFG,8,EL docget.jsp?did=11314&prodName=TB62802AFG
TB62802AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC CCD CLOCK DRIVER 18HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 4.7V ~ 5.5V
Applications: CCD Driver
Supplier Device Package: 16-HSOP
Part Status: Active
Produkt ist nicht verfügbar
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TB62D612FTG,EL TB62D612FTG_datasheet_en_20210129.pdf?did=13449&prodName=TB62D612FTG
TB62D612FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN PWM 40MA 36WQFN
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 36-WQFN (6x6)
Dimming: Analog, I2C, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+4.74 EUR
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TB62720FG(8FFNICHI
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DVR 16CH CC 64HQFP
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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TB6585AFTGC8,EL TB6585AFTG_datasheet_en_20130902.pdf?did=14351&prodName=TB6585AFTG
TB6585AFTGC8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 4.5V-42V 48QFN
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 48-QFN (7x7)
Voltage - Load: 4.5V ~ 42V
Technology: Bi-CMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 42V
Output Configuration: Half Bridge (3)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TB62771FTG,8,EL TB62771FTG_datasheet_en_20130523.pdf?did=14147&prodName=TB62771FTG
TB62771FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRV RGLTR PWM 20WQFN
Part Status: Active
Voltage - Supply (Max): 40V
Voltage - Supply (Min): 4.75V
Dimming: PWM
Supplier Device Package: 20-WQFN (4x4)
Topology: Step-Up (Boost)
Internal Switch(s): Yes
Current - Output / Channel: 150mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
Type: DC DC Regulator
Frequency: 200kHz ~ 2MHz
Voltage - Output: 45V
Package / Case: 20-WFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Outputs: 4
Mounting Type: Surface Mount
auf Bestellung 12421 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.93 EUR
10+2.64 EUR
25+2.49 EUR
100+2.12 EUR
250+1.99 EUR
500+1.74 EUR
1000+1.44 EUR
2500+1.34 EUR
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TB62779FNG,EL docget.jsp?type=datasheet&lang=en&pid=TB62779FNG
TB62779FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN DIM 40MA 20SSOP
auf Bestellung 1355 Stücke:
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TB62781FNG,8,EL TB62781FNG.pdf
TB62781FNG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 40MA 20SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB62802AFG,8,EL docget.jsp?did=11314&prodName=TB62802AFG
TB62802AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC CCD CLOCK DRIVER 18HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 4.7V ~ 5.5V
Applications: CCD Driver
Supplier Device Package: 16-HSOP
Part Status: Active
Produkt ist nicht verfügbar
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TB62D612FTG,EL TB62D612FTG_datasheet_en_20210129.pdf?did=13449&prodName=TB62D612FTG
TB62D612FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN PWM 40MA 36WQFN
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Voltage - Output: 4V
Mounting Type: Surface Mount
Number of Outputs: 24
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Supplier Device Package: 36-WQFN (6x6)
Dimming: Analog, I2C, PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 17170 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.71 EUR
10+6.63 EUR
25+6.09 EUR
100+5.52 EUR
250+5.25 EUR
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TB62779FNG,EL docget.jsp?type=datasheet&lang=en&pid=TB62779FNG
TB62779FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LIN DIM 40MA 20SSOP
Produkt ist nicht verfügbar
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SSM3J114TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3J114TU
SSM3J114TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM3J114TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3J114TU
SSM3J114TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
auf Bestellung 679 Stücke:
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SSM3J114TU(TE85L) docget.jsp?type=datasheet&lang=en&pid=SSM3J114TU
SSM3J114TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.8A UFM
Produkt ist nicht verfügbar
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TC35661SBG-501,EL TC35661SBG-501_E_rev100_Oct_2013_Overview_Specification.pdf
TC35661SBG-501,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LSI BLUETOOTH SPP BLE 64PIN
auf Bestellung 2000 Stücke:
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TC35661SBG-203,EL
TC35661SBG-203,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH 64FBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TC35661SBG-007,EL
TC35661SBG-007,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH 64FBGA
Produkt ist nicht verfügbar
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TC32306FTG,EL TC32306FTG_datasheet_en_20151001.pdf?did=13607&prodName=TC32306FTG
TC32306FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX ISM<1GHZ 36QFN
Packaging: Tape & Reel (TR)
Package / Case: 36-VFQFN Exposed Pad
Sensitivity: -121dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2V ~ 3.3V, 2.4V ~ 5.5V
Power - Output: 10dBm
Current - Receiving: 9.2mA ~ 11.1mA
Current - Transmitting: 4.8mA ~ 12mA
Supplier Device Package: 36-QFN (5.3x5.3)
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC35661SBG-501,EL TC35661SBG-501_E_rev100_Oct_2013_Overview_Specification.pdf
TC35661SBG-501,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LSI BLUETOOTH SPP BLE 64PIN
auf Bestellung 1990 Stücke:
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TC35661SBG-203,EL
TC35661SBG-203,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX BLUETOOTH 64FBGA
Produkt ist nicht verfügbar
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TC32306FTG,EL TC32306FTG_datasheet_en_20151001.pdf?did=13607&prodName=TC32306FTG
TC32306FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX ISM<1GHZ 36QFN
Packaging: Cut Tape (CT)
Package / Case: 36-VFQFN Exposed Pad
Sensitivity: -121dBm
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 2V ~ 3.3V, 2.4V ~ 5.5V
Power - Output: 10dBm
Current - Receiving: 9.2mA ~ 11.1mA
Current - Transmitting: 4.8mA ~ 12mA
Supplier Device Package: 36-QFN (5.3x5.3)
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
auf Bestellung 1999 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.85 EUR
10+5.91 EUR
25+5.59 EUR
100+5.15 EUR
250+4.88 EUR
500+4.69 EUR
1000+4.51 EUR
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TC35661SBG-501,EL TC35661SBG-501_E_rev100_Oct_2013_Overview_Specification.pdf
TC35661SBG-501,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LSI BLUETOOTH SPP BLE 64PIN
Produkt ist nicht verfügbar
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2SK2145-GR(TE85L,F 2SK2145_datasheet_en_20140301.pdf?did=19704&prodName=2SK2145
2SK2145-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: JFET 2N-CH SMV
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Power - Max: 300 mW
Part Status: Active
Supplier Device Package: SMV
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: 2 N-Channel (Dual)
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SK2145-Y(TE85L,F) 2SK2145_datasheet_en_20140301.pdf?did=19704&prodName=2SK2145
2SK2145-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET 2N-CH SMV
Supplier Device Package: SMV
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: 2 N-Channel (Dual)
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Power - Max: 300 mW
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.51 EUR
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2SK3320-BL(TE85L,F 2SK3320_datasheet_en_20140301.pdf?did=19706&prodName=2SK3320
2SK3320-BL(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH USV
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 100 nA
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: USV
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
auf Bestellung 24000 Stücke:
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3000+0.55 EUR
6000+0.5 EUR
9000+0.49 EUR
15000+0.46 EUR
21000+0.44 EUR
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2SK3320-GR(TE85L,F docget.jsp?type=datasheet&lang=en&pid=2SK3320
2SK3320-GR(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: JFET DUAL N-CH USV
auf Bestellung 3000 Stücke:
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2SK879-GR(TE85L,F) 2SK879_datasheet_en_20140301.pdf?did=19697&prodName=2SK879
2SK879-GR(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH USM
Packaging: Tape & Reel (TR)
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: USM
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
auf Bestellung 9000 Stücke:
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3000+0.26 EUR
6000+0.25 EUR
9000+0.23 EUR
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2SK879-Y(TE85L,F) 2SK879_datasheet_en_20140301.pdf?did=19697&prodName=2SK879
2SK879-Y(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 0.1W USM
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: USM
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
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3000+0.26 EUR
6000+0.25 EUR
9000+0.23 EUR
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3SK292(TE85R,F) docget.jsp?did=17966&prodName=3SK292
3SK292(TE85R,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 12.5 30MA SMQ
auf Bestellung 3000 Stücke:
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3000+0.35 EUR
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3SK294(TE85L,F)
3SK294(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V USQ
Current Rating (Amps): 30mA
Package / Case: SC-82A, SOT-343
Packaging: Tape & Reel (TR)
Current - Test: 10 mA
Voltage - Test: 6 V
Voltage - Rated: 12.5 V
Part Status: Not For New Designs
Supplier Device Package: USQ
Noise Figure: 1.4dB
Technology: MOSFET (Metal Oxide)
Gain: 26dB
Configuration: N-Channel
Frequency: 500MHz
Mounting Type: Surface Mount
auf Bestellung 21000 Stücke:
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3000+0.21 EUR
6000+0.2 EUR
9000+0.18 EUR
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TC7LX1102FK,LF docget.jsp?pid=TC7LX1102FK&lang=en&type=datasheet
Hersteller: Toshiba Semiconductor and Storage
Description: LEVEL SHIFTER 8BIT US8
Produkt ist nicht verfügbar
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TC7MBL3125CFT(EL) docget.jsp?did=57313&prodName=TC7MBL3125CFK
TC7MBL3125CFT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
Produkt ist nicht verfügbar
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TC7MBL3245CFT(EL) docget.jsp?did=11911&prodName=TC7MBL3245CFT
TC7MBL3245CFT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 8 X 1:1 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 8 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 20-TSSOP
auf Bestellung 6000 Stücke:
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2000+0.36 EUR
4000+0.35 EUR
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TC7MBL3253CFT(EL) docget.jsp?did=22003&prodName=TC7MBL3253CFT
TC7MBL3253CFT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 2 X 4:1 16TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 2 x 4:1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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2000+0.37 EUR
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TC7MPB9326FT-EL docget.jsp?pid=TC7MPB9326FT&lang=en&type=datasheet
TC7MPB9326FT-EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP DUAL 14TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TC7MPB9327FT-EL docget.jsp?pid=TC7MPB9326FT&lang=en&type=datasheet
TC7MPB9327FT-EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP DUAL 14TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TC7SB66CFU,LF docget.jsp?pid=TC7SB66CFU&lang=en&type=datasheet
TC7SB66CFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH LOCAP USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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