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TC4584BF(EL,N,F) TC4584BF(EL,N,F) Toshiba Semiconductor and Storage docget.jsp?did=20900&prodName=TC4584BF Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.75V ~ 11.6V
Input Logic Level - Low: 1.25V ~ 3.4V
Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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TC4S69F(TE85L,F) TC4S69F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20165&prodName=TC4S69F Description: IC INVERTER 1CH 1-INP SMV
Produkt ist nicht verfügbar
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TC4SU11F(T5L,F,T) TC4SU11F(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC4SU11F Description: IC GATE NAND 1CH 2-INP SMV
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TC74HC4051AFT(EL,M TC74HC4051AFT(EL,M Toshiba Semiconductor and Storage docget.jsp?did=16132&prodName=TC74HC4051AP Description: IC MUX/DEMUX 8X1 16TSSOP
Produkt ist nicht verfügbar
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TC74VHC27FT(ELK,M) TC74VHC27FT(ELK,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC74VHC27FT Description: IC GATE NOR 3CH 3-INP 14-TSSOP
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TC7LX1108WBG(EL,AH TC7LX1108WBG(EL,AH Toshiba Semiconductor and Storage Description: IC TRANSLATOR BIDIR 24WCSPC
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 24-UFBGA, WLCSP
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 200Mbps
Supplier Device Package: 24-WCSPC (2.05x2.05)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.2 V ~ 3.6 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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TC7MBL3257CFT(EL) TC7MBL3257CFT(EL) Toshiba Semiconductor and Storage docget.jsp?did=57109&prodName=TC7MBL3257CFK Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
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TC7SET08F,LJ TC7SET08F,LJ Toshiba Semiconductor and Storage docget.jsp?did=20075&prodName=TC7SET08F Description: IC GATE AND 1CH 2-INP SMV
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TC7SET125F(TE85L,F TC7SET125F(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=657&prodName=TC7SET125F Description: IC BUFFER NON-INVERT 5.5V SMV
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TC7SET125FU,LJ(CT TC7SET125FU,LJ(CT Toshiba Semiconductor and Storage TC7SET125FU_datasheet_en_20230410.pdf?did=53719&prodName=TC7SET125FU Description: IC BUFFER NON-INVERT 5.5V 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.056 EUR
6000+0.054 EUR
9000+0.053 EUR
15000+0.052 EUR
21000+0.051 EUR
Mindestbestellmenge: 3000
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TC7SH02F,LJ TC7SH02F,LJ Toshiba Semiconductor and Storage TC7SH02F,fU_Rev2009.pdf Description: IC GATE NOR 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH08F,LJ TC7SH08F,LJ Toshiba Semiconductor and Storage docget.jsp?did=20099&prodName=TC7SH08F Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SH32F,LJ Toshiba Semiconductor and Storage TC7SH32F,FU.pdf Description: IC GATE OR 1CH 2-INP SMV
auf Bestellung 6000 Stücke:
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TC7SH34FS(TPL3) TC7SH34FS(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH34FS Description: IC GATE L-MOS FSV
Produkt ist nicht verfügbar
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TC7SZ17FU,LJ(CT TC7SZ17FU,LJ(CT Toshiba Semiconductor and Storage TC7SZ17FU_datasheet_en_20170517.pdf?did=54618&prodName=TC7SZ17FU Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 5-SSOP
auf Bestellung 3000 Stücke:
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3000+0.058 EUR
Mindestbestellmenge: 3000
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TC7W02FK(TE85L,F) TC7W02FK(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20201&prodName=TC7W02FK Description: IC GATE NOR 2CH 2-INP US8
Produkt ist nicht verfügbar
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TC7W240FU(TE12L,F) TC7W240FU(TE12L,F) Toshiba Semiconductor and Storage TC7W240FU_datasheet_en_20141118.pdf?did=20226&prodName=TC7W240FU Description: IC BUFFER INVERT 6V SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
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TC7WP3125FC(TE85L) TC7WP3125FC(TE85L) Toshiba Semiconductor and Storage TC7WP3125FK_datasheet_en_20210721.pdf?did=6285&prodName=TC7WP3125FK Description: IC BUS SWITCH 2 X 1:1 CST8
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 2.7V, 1.65V ~ 3.6V
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: CST8
Produkt ist nicht verfügbar
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TC7WP3125FK(T5L,F) TC7WP3125FK(T5L,F) Toshiba Semiconductor and Storage TC7WP3125FK_datasheet_en_20210721.pdf?did=6285&prodName=TC7WP3125FK Description: IC BUS SWITCH 2 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 2.7V, 1.65V ~ 3.6V
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 8-SSOP
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TC7WPN3125FC(TE85L TC7WPN3125FC(TE85L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WPN3125FC Description: IC BUS SWITCH SPST DUAL CST8
Produkt ist nicht verfügbar
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TC7WPN3125FK(T5L,F TC7WPN3125FK(T5L,F Toshiba Semiconductor and Storage docget.jsp?did=6287&prodName=TC7WPN3125FC Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 3000 Stücke:
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TK20G60W,RVQ TK20G60W,RVQ Toshiba Semiconductor and Storage TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W Description: MOSFET N CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 1000 Stücke:
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1000+2.02 EUR
Mindestbestellmenge: 1000
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TK39A60W,S4VX TK39A60W,S4VX Toshiba Semiconductor and Storage TK39A60W_datasheet_en_20131226.pdf?did=13494&prodName=TK39A60W Description: MOSFET N-CH 600V 38.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 54 Stücke:
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2+15 EUR
50+11.97 EUR
Mindestbestellmenge: 2
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TK10Q60W,S1VQ TK10Q60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?did=13503&prodName=TK10Q60W Description: MOSFET N-CH 600V 9.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TK16C60W,S1VQ TK16C60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?pid=TK16C60W&lang=en&type=datasheet Description: MOSFET N-CH 600V 15.8A I2PAK
auf Bestellung 280 Stücke:
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TK20C60W,S1VQ TK20C60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK20C60W Description: MOSFET N-CH 600V 20A I2PAK
auf Bestellung 288 Stücke:
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TK10V60W,LVQ TK10V60W,LVQ Toshiba Semiconductor and Storage TK10V60W_datasheet_en_20160520.pdf?did=14217&prodName=TK10V60W Description: MOSFET N-CH 600V 9.7A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 88.3W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TK12V60W,LVQ TK12V60W,LVQ Toshiba Semiconductor and Storage TK12V60W_datasheet_en_20150203.pdf?did=14171&prodName=TK12V60W Description: MOSFET N-CH 600V 11.5A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK16V60W,LVQ TK16V60W,LVQ Toshiba Semiconductor and Storage TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W,LVQ TK20V60W,LVQ Toshiba Semiconductor and Storage TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
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TK31V60W,LVQ TK31V60W,LVQ Toshiba Semiconductor and Storage TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
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TK20A60W,S5VX TK20A60W,S5VX Toshiba Semiconductor and Storage docget.jsp?did=14063&prodName=TK20A60W Description: MOSFET N-CH 600V 20A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.79 EUR
Mindestbestellmenge: 4
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TK20N60W,S1VF TK20N60W,S1VF Toshiba Semiconductor and Storage docget.jsp?did=13898&prodName=TK20N60W Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 13 Stücke:
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2+12.21 EUR
Mindestbestellmenge: 2
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TPN11003NL,LQ TPN11003NL,LQ Toshiba Semiconductor and Storage TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
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TPN8R903NL,LQ TPN8R903NL,LQ Toshiba Semiconductor and Storage TPN8R903NL_datasheet_en_20140218.pdf?did=14026&prodName=TPN8R903NL Description: MOSFET N-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.5 EUR
Mindestbestellmenge: 3000
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TPN6R003NL,LQ TPN6R003NL,LQ Toshiba Semiconductor and Storage TPN6R003NL_datasheet_en_20140218.pdf?did=14069&prodName=TPN6R003NL Description: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH11003NL,LQ TPH11003NL,LQ Toshiba Semiconductor and Storage TPH11003NL_datasheet_en_20140217.pdf?did=14042&prodName=TPH11003NL Description: MOSFET N CH 30V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH8R903NL,LQ TPH8R903NL,LQ Toshiba Semiconductor and Storage TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL Description: MOSFET N CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH6R003NL,LQ TPH6R003NL,LQ Toshiba Semiconductor and Storage TPH6R003NL_datasheet_en_20140218.pdf?did=14012&prodName=TPH6R003NL Description: MOSFET N CH 30V 38A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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TPN1600ANH,L1Q TPN1600ANH,L1Q Toshiba Semiconductor and Storage TPN1600ANH_datasheet_en_20191018.pdf?did=13538&prodName=TPN1600ANH Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.56 EUR
Mindestbestellmenge: 5000
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TP86R203NL,LQ TP86R203NL,LQ Toshiba Semiconductor and Storage docget.jsp?did=14088&prodName=TP86R203NL Description: MOSFET N CH 30V 19A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.65 EUR
5000+0.61 EUR
7500+0.6 EUR
Mindestbestellmenge: 2500
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TRS6E65C,S1AQ TRS6E65C,S1AQ Toshiba Semiconductor and Storage Description: DIODE SIL CARB 650V 6A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 35pF @ 650V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TRS8E65C,S1Q TRS8E65C,S1Q Toshiba Semiconductor and Storage docget.jsp?did=14213&prodName=TRS8E65C Description: DIODE SCHOTTKY 650V 8A TO220-2L
Produkt ist nicht verfügbar
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TRS12E65C,S1Q TRS12E65C,S1Q Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TRS12E65C Description: DIODE SCHOTTKY 650V 12A TO220-2L
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
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TK7Q60W,S1VQ TK7Q60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK7Q60W Description: MOSFET N-CH 600V 7A IPAK-3
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH6R003NL,LQ TPH6R003NL,LQ Toshiba Semiconductor and Storage TPH6R003NL_datasheet_en_20140218.pdf?did=14012&prodName=TPH6R003NL Description: MOSFET N CH 30V 38A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2812 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.44 EUR
15+1.19 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.64 EUR
Mindestbestellmenge: 13
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TPN1600ANH,L1Q TPN1600ANH,L1Q Toshiba Semiconductor and Storage TPN1600ANH_datasheet_en_20191018.pdf?did=13538&prodName=TPN1600ANH Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 5875 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
13+1.36 EUR
100+0.92 EUR
500+0.74 EUR
1000+0.64 EUR
2000+0.62 EUR
Mindestbestellmenge: 9
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TP86R203NL,LQ TP86R203NL,LQ Toshiba Semiconductor and Storage docget.jsp?did=14088&prodName=TP86R203NL Description: MOSFET N CH 30V 19A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 10369 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.99 EUR
13+1.37 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.75 EUR
Mindestbestellmenge: 9
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TK10V60W,LVQ TK10V60W,LVQ Toshiba Semiconductor and Storage TK10V60W_datasheet_en_20160520.pdf?did=14217&prodName=TK10V60W Description: MOSFET N-CH 600V 9.7A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 88.3W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TPH11003NL,LQ TPH11003NL,LQ Toshiba Semiconductor and Storage TPH11003NL_datasheet_en_20140217.pdf?did=14042&prodName=TPH11003NL Description: MOSFET N CH 30V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2288 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
21+0.84 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.4 EUR
Mindestbestellmenge: 14
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TK20G60W,RVQ TK20G60W,RVQ Toshiba Semiconductor and Storage TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W Description: MOSFET N CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.86 EUR
10+3.83 EUR
100+2.67 EUR
500+2.18 EUR
Mindestbestellmenge: 4
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TK12V60W,LVQ TK12V60W,LVQ Toshiba Semiconductor and Storage TK12V60W_datasheet_en_20150203.pdf?did=14171&prodName=TK12V60W Description: MOSFET N-CH 600V 11.5A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK16V60W,LVQ TK16V60W,LVQ Toshiba Semiconductor and Storage TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W,LVQ TK20V60W,LVQ Toshiba Semiconductor and Storage TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
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TK31V60W,LVQ TK31V60W,LVQ Toshiba Semiconductor and Storage TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.09 EUR
10+11.06 EUR
100+8.23 EUR
500+7.6 EUR
Mindestbestellmenge: 2
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TPN11003NL,LQ TPN11003NL,LQ Toshiba Semiconductor and Storage TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
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TPN8R903NL,LQ TPN8R903NL,LQ Toshiba Semiconductor and Storage TPN8R903NL_datasheet_en_20140218.pdf?did=14026&prodName=TPN8R903NL Description: MOSFET N-CH 30V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 8122 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
20+0.91 EUR
100+0.65 EUR
500+0.59 EUR
1000+0.52 EUR
Mindestbestellmenge: 14
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TPN6R003NL,LQ TPN6R003NL,LQ Toshiba Semiconductor and Storage TPN6R003NL_datasheet_en_20140218.pdf?did=14069&prodName=TPN6R003NL Description: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2956 Stücke:
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13+1.37 EUR
16+1.13 EUR
100+0.88 EUR
500+0.74 EUR
1000+0.61 EUR
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TPH8R903NL,LQ TPH8R903NL,LQ Toshiba Semiconductor and Storage TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL Description: MOSFET N CH 30V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3150 Stücke:
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13+1.43 EUR
20+0.9 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.44 EUR
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TCK104G,LF TCK104G,LF Toshiba Semiconductor and Storage docget.jsp?did=14030&prodName=TCK104G Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
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TC4584BF(EL,N,F) docget.jsp?did=20900&prodName=TC4584BF
TC4584BF(EL,N,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.75V ~ 11.6V
Input Logic Level - Low: 1.25V ~ 3.4V
Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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TC4S69F(TE85L,F) docget.jsp?did=20165&prodName=TC4S69F
TC4S69F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP SMV
Produkt ist nicht verfügbar
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TC4SU11F(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=TC4SU11F
TC4SU11F(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC74HC4051AFT(EL,M docget.jsp?did=16132&prodName=TC74HC4051AP
TC74HC4051AFT(EL,M
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 8X1 16TSSOP
Produkt ist nicht verfügbar
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TC74VHC27FT(ELK,M) docget.jsp?type=datasheet&lang=en&pid=TC74VHC27FT
TC74VHC27FT(ELK,M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 3CH 3-INP 14-TSSOP
Produkt ist nicht verfügbar
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TC7LX1108WBG(EL,AH
TC7LX1108WBG(EL,AH
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLATOR BIDIR 24WCSPC
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 24-UFBGA, WLCSP
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 200Mbps
Supplier Device Package: 24-WCSPC (2.05x2.05)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.2 V ~ 3.6 V
Voltage - VCCB: 1.2 V ~ 3.6 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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TC7MBL3257CFT(EL) docget.jsp?did=57109&prodName=TC7MBL3257CFK
TC7MBL3257CFT(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 2:1 16TSSOP
Produkt ist nicht verfügbar
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TC7SET08F,LJ docget.jsp?did=20075&prodName=TC7SET08F
TC7SET08F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SET125F(TE85L,F docget.jsp?did=657&prodName=TC7SET125F
TC7SET125F(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Produkt ist nicht verfügbar
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TC7SET125FU,LJ(CT TC7SET125FU_datasheet_en_20230410.pdf?did=53719&prodName=TC7SET125FU
TC7SET125FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V 5-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
6000+0.054 EUR
9000+0.053 EUR
15000+0.052 EUR
21000+0.051 EUR
Mindestbestellmenge: 3000
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TC7SH02F,LJ TC7SH02F,fU_Rev2009.pdf
TC7SH02F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH08F,LJ docget.jsp?did=20099&prodName=TC7SH08F
TC7SH08F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SH32F,LJ TC7SH32F,FU.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV
auf Bestellung 6000 Stücke:
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TC7SH34FS(TPL3) docget.jsp?type=datasheet&lang=en&pid=TC7SH34FS
TC7SH34FS(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS FSV
Produkt ist nicht verfügbar
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TC7SZ17FU,LJ(CT TC7SZ17FU_datasheet_en_20170517.pdf?did=54618&prodName=TC7SZ17FU
TC7SZ17FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 5-SSOP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.058 EUR
Mindestbestellmenge: 3000
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TC7W02FK(TE85L,F) docget.jsp?did=20201&prodName=TC7W02FK
TC7W02FK(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP US8
Produkt ist nicht verfügbar
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TC7W240FU(TE12L,F) TC7W240FU_datasheet_en_20141118.pdf?did=20226&prodName=TC7W240FU
TC7W240FU(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 6V SM8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
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TC7WP3125FC(TE85L) TC7WP3125FK_datasheet_en_20210721.pdf?did=6285&prodName=TC7WP3125FK
TC7WP3125FC(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 CST8
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 2.7V, 1.65V ~ 3.6V
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: CST8
Produkt ist nicht verfügbar
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TC7WP3125FK(T5L,F) TC7WP3125FK_datasheet_en_20210721.pdf?did=6285&prodName=TC7WP3125FK
TC7WP3125FK(T5L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 2.7V, 1.65V ~ 3.6V
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 8-SSOP
Produkt ist nicht verfügbar
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TC7WPN3125FC(TE85L docget.jsp?type=datasheet&lang=en&pid=TC7WPN3125FC
TC7WPN3125FC(TE85L
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
Produkt ist nicht verfügbar
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TC7WPN3125FK(T5L,F docget.jsp?did=6287&prodName=TC7WPN3125FC
TC7WPN3125FK(T5L,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 2 X 1:1 US8
auf Bestellung 3000 Stücke:
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TK20G60W,RVQ TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W
TK20G60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.02 EUR
Mindestbestellmenge: 1000
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TK39A60W,S4VX TK39A60W_datasheet_en_20131226.pdf?did=13494&prodName=TK39A60W
TK39A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15 EUR
50+11.97 EUR
Mindestbestellmenge: 2
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TK10Q60W,S1VQ docget.jsp?did=13503&prodName=TK10Q60W
TK10Q60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: IPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TK16C60W,S1VQ docget.jsp?pid=TK16C60W&lang=en&type=datasheet
TK16C60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A I2PAK
auf Bestellung 280 Stücke:
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TK20C60W,S1VQ docget.jsp?type=datasheet&lang=en&pid=TK20C60W
TK20C60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A I2PAK
auf Bestellung 288 Stücke:
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TK10V60W,LVQ TK10V60W_datasheet_en_20160520.pdf?did=14217&prodName=TK10V60W
TK10V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 88.3W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TK12V60W,LVQ TK12V60W_datasheet_en_20150203.pdf?did=14171&prodName=TK12V60W
TK12V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK16V60W,LVQ TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W
TK16V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W,LVQ TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W
TK20V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
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TK31V60W,LVQ TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W
TK31V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
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TK20A60W,S5VX docget.jsp?did=14063&prodName=TK20A60W
TK20A60W,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.79 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK20N60W,S1VF docget.jsp?did=13898&prodName=TK20N60W
TK20N60W,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.21 EUR
Mindestbestellmenge: 2
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TPN11003NL,LQ TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL
TPN11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN8R903NL,LQ TPN8R903NL_datasheet_en_20140218.pdf?did=14026&prodName=TPN8R903NL
TPN8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.5 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TPN6R003NL,LQ TPN6R003NL_datasheet_en_20140218.pdf?did=14069&prodName=TPN6R003NL
TPN6R003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH11003NL,LQ TPH11003NL_datasheet_en_20140217.pdf?did=14042&prodName=TPH11003NL
TPH11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 32A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH8R903NL,LQ TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL
TPH8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH6R003NL,LQ TPH6R003NL_datasheet_en_20140218.pdf?did=14012&prodName=TPH6R003NL
TPH6R003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 38A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN1600ANH,L1Q TPN1600ANH_datasheet_en_20191018.pdf?did=13538&prodName=TPN1600ANH
TPN1600ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.56 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TP86R203NL,LQ docget.jsp?did=14088&prodName=TP86R203NL
TP86R203NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 19A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.65 EUR
5000+0.61 EUR
7500+0.6 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TRS6E65C,S1AQ
TRS6E65C,S1AQ
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 6A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 35pF @ 650V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS8E65C,S1Q docget.jsp?did=14213&prodName=TRS8E65C
TRS8E65C,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 650V 8A TO220-2L
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS12E65C,S1Q docget.jsp?type=datasheet&lang=en&pid=TRS12E65C
TRS12E65C,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 650V 12A TO220-2L
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TK7Q60W,S1VQ docget.jsp?type=datasheet&lang=en&pid=TK7Q60W
TK7Q60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A IPAK-3
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TPH6R003NL,LQ TPH6R003NL_datasheet_en_20140218.pdf?did=14012&prodName=TPH6R003NL
TPH6R003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 38A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2812 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
15+1.19 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.64 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
TPN1600ANH,L1Q TPN1600ANH_datasheet_en_20191018.pdf?did=13538&prodName=TPN1600ANH
TPN1600ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 17A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
auf Bestellung 5875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
13+1.36 EUR
100+0.92 EUR
500+0.74 EUR
1000+0.64 EUR
2000+0.62 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TP86R203NL,LQ docget.jsp?did=14088&prodName=TP86R203NL
TP86R203NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 19A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 9A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 10369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
13+1.37 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.75 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TK10V60W,LVQ TK10V60W_datasheet_en_20160520.pdf?did=14217&prodName=TK10V60W
TK10V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 88.3W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH11003NL,LQ TPH11003NL_datasheet_en_20140217.pdf?did=14042&prodName=TPH11003NL
TPH11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 32A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
21+0.84 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.4 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
TK20G60W,RVQ TK20G60W_datasheet_en_20131226.pdf?did=13840&prodName=TK20G60W
TK20G60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
10+3.83 EUR
100+2.67 EUR
500+2.18 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK12V60W,LVQ TK12V60W_datasheet_en_20150203.pdf?did=14171&prodName=TK12V60W
TK12V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK16V60W,LVQ TK16V60W_datasheet_en_20140225.pdf?did=14225&prodName=TK16V60W
TK16V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK20V60W,LVQ TK20V60W_datasheet_en_20140228.pdf?did=14218&prodName=TK20V60W
TK20V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Produkt ist nicht verfügbar
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TK31V60W,LVQ TK31V60W_datasheet_en_20140225.pdf?did=14155&prodName=TK31V60W
TK31V60W,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 15.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.09 EUR
10+11.06 EUR
100+8.23 EUR
500+7.6 EUR
Mindestbestellmenge: 2
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TPN11003NL,LQ TPN11003NL_datasheet_en_20140218.pdf?did=14013&prodName=TPN11003NL
TPN11003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 11A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5.5A, 10V
Power Dissipation (Max): 700mW (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
auf Bestellung 2894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
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TPN8R903NL,LQ TPN8R903NL_datasheet_en_20140218.pdf?did=14026&prodName=TPN8R903NL
TPN8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 700mW (Ta), 22W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 8122 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
20+0.91 EUR
100+0.65 EUR
500+0.59 EUR
1000+0.52 EUR
Mindestbestellmenge: 14
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TPN6R003NL,LQ TPN6R003NL_datasheet_en_20140218.pdf?did=14069&prodName=TPN6R003NL
TPN6R003NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 27A 8TSON-ADV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 13.5A, 10V
Power Dissipation (Max): 700mW (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 2956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
16+1.13 EUR
100+0.88 EUR
500+0.74 EUR
1000+0.61 EUR
Mindestbestellmenge: 13
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TPH8R903NL,LQ TPH8R903NL_datasheet_en_20140218.pdf?did=14068&prodName=TPH8R903NL
TPH8R903NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 10V
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 3150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
20+0.9 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.44 EUR
Mindestbestellmenge: 13
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TCK104G,LF docget.jsp?did=14030&prodName=TCK104G
TCK104G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 6WCSP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
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