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Preis
ohne MwSt
RN1117(T5L,F,T) RN1117(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18763&prodName=RN1115 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
RN1118(T5L,F,T) RN1118(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1114 Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1130MFV,L3F RN1130MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=949&prodName=RN1130MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Produkt ist nicht verfügbar
RN1131MFV(TL3,T) RN1131MFV(TL3,T) Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
53+0.49 EUR
73+ 0.36 EUR
136+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2000+ 0.087 EUR
Mindestbestellmenge: 53
RN1301,LF RN1301,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1301 Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 1785 Stücke:
Lieferzeit 21-28 Tag (e)
59+0.44 EUR
65+ 0.41 EUR
118+ 0.22 EUR
500+ 0.14 EUR
1000+ 0.093 EUR
Mindestbestellmenge: 59
RN1303(TE85L,F) RN1303(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1302 Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 1627 Stücke:
Lieferzeit 21-28 Tag (e)
RN1308,LF RN1308,LF Toshiba Semiconductor and Storage docget.jsp?did=18778&prodName=RN1308 Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 7466 Stücke:
Lieferzeit 21-28 Tag (e)
RN1309(TE85L,F) RN1309(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1307 Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 1995 Stücke:
Lieferzeit 21-28 Tag (e)
RN1310(TE85L,F) RN1310(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18781&prodName=RN1310 Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 2626 Stücke:
Lieferzeit 21-28 Tag (e)
RN1312(TE85L,F) RN1312(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1312 Description: TRANS PREBIAS NPN 0.15W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN1313(TE85L,F) RN1313(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1312 Description: TRANS PREBIAS NPN 0.15W USM
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)
RN1314(TE85L,F) RN1314(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1314 Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 2975 Stücke:
Lieferzeit 21-28 Tag (e)
RN1316,LF RN1316,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1314 Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 618 Stücke:
Lieferzeit 21-28 Tag (e)
RN1317(TE85L,F) RN1317(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1314 Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 2925 Stücke:
Lieferzeit 21-28 Tag (e)
RN1318(TE85L,F) RN1318(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1314 Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 2835 Stücke:
Lieferzeit 21-28 Tag (e)
RN1413(TE85L,F) RN1413(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18794&prodName=RN1412 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
auf Bestellung 5675 Stücke:
Lieferzeit 21-28 Tag (e)
RN1507(TE85L,F) RN1507(TE85L,F) Toshiba Semiconductor and Storage Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
auf Bestellung 4478 Stücke:
Lieferzeit 21-28 Tag (e)
32+0.83 EUR
45+ 0.58 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 32
RN1602(TE85L,F) RN1602(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1601 Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
auf Bestellung 5560 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
43+ 0.61 EUR
100+ 0.31 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 30
RN1903,LF(CT RN1903,LF(CT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
Mindestbestellmenge: 40
RN1904(T5L,F,T) RN1904(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902 Description: TRANSISTOR NPN US6
auf Bestellung 2960 Stücke:
Lieferzeit 21-28 Tag (e)
RN1906(T5L,F,T) RN1906(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN1961FE(TE85L,F) RN1961FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1961FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
RN1962FE(TE85L,F) RN1962FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 3850 Stücke:
Lieferzeit 21-28 Tag (e)
RN1963FE(TE85L,F) RN1963FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 915 Stücke:
Lieferzeit 21-28 Tag (e)
RN1964FE(TE85L,F) RN1964FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 3970 Stücke:
Lieferzeit 21-28 Tag (e)
RN1966FE(TE85L,F) RN1966FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19072&prodName=RN1965FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
RN2301,LF RN2301,LF Toshiba Semiconductor and Storage docget.jsp?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A USM
auf Bestellung 13 Stücke:
Lieferzeit 21-28 Tag (e)
RN2303(TE85L,F) RN2303(TE85L,F) Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 367 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
58+ 0.45 EUR
119+ 0.22 EUR
Mindestbestellmenge: 40
RN2304(TE85L,F) RN2304(TE85L,F) Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2305(TE85L,F) RN2305(TE85L,F) Toshiba Semiconductor and Storage RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301 Description: TRANS PREBIAS PNP 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
58+ 0.45 EUR
Mindestbestellmenge: 40
RN2307(TE85L,F) RN2307(TE85L,F) Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2309(TE85L,F) RN2309(TE85L,F) Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 2698 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
58+ 0.45 EUR
119+ 0.22 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 40
RN2311(TE85L,F) RN2311(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2310 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 2650 Stücke:
Lieferzeit 21-28 Tag (e)
RN2312(TE85L,F) RN2312(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2312 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN2313(TE85L,F) RN2313(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2312 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN2314(TE85L,F) RN2314(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2314 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)
RN2316(TE85L,F) RN2316(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2314 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN2317(TE85L,F) RN2317(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18872&prodName=RN2318 Description: TRANS PREBIAS PNP 50V 0.1A USM
auf Bestellung 2565 Stücke:
Lieferzeit 21-28 Tag (e)
RN2318(TE85L,F) RN2318(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2314 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
RN2506(TE85L,F) RN2506(TE85L,F) Toshiba Semiconductor and Storage RN2501_datasheet_en_20191119.pdf?did=18887&prodName=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
auf Bestellung 3171 Stücke:
Lieferzeit 21-28 Tag (e)
32+0.83 EUR
46+ 0.58 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 32
RN2711(TE85L,F) RN2711(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18905&prodName=RN2711 Description: TRANS 2PNP PREBIAS 0.2W USV
Produkt ist nicht verfügbar
RN4603(TE85L,F) RN4603(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18926&prodName=RN4603 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
RN4606(TE85L,F) RN4606(TE85L,F) Toshiba Semiconductor and Storage RN4606_datasheet_en_20191101.pdf?did=18932&prodName=RN4606 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 3939 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
43+ 0.61 EUR
100+ 0.31 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 30
RN4906(T5L,F,T) RN4906(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4906 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4981,LF(CT RN4981,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4981 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 7895 Stücke:
Lieferzeit 21-28 Tag (e)
RN4983(T5L,F,T) RN4983(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4983 Description: TRANS NPN PNP 50V 100MA US6
Produkt ist nicht verfügbar
RN4984(T5L,F,T) RN4984(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4984 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
RN4985,LF(CT RN4985,LF(CT Toshiba Semiconductor and Storage RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 2981 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
61+ 0.43 EUR
124+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 40
RN4986(T5L,F,T) RN4986(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4986 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 2730 Stücke:
Lieferzeit 21-28 Tag (e)
RN4988(T5L,F,T) RN4988(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4988 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN4989(T5L,F,T) RN4989(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4989 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN4990(T5L,F,T) RN4990(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4990 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN4991(T5L,F,T) RN4991(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?did=18994&prodName=RN4991 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
SSM3J118TU(TE85L) SSM3J118TU(TE85L) Toshiba Semiconductor and Storage docget.jsp?did=7050&prodName=SSM3J118TU Description: MOSFET P-CH 30V 1.4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
auf Bestellung 104 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
36+ 0.74 EUR
100+ 0.5 EUR
Mindestbestellmenge: 29
SSM3J15CT(TPL3) SSM3J15CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J15CT Description: MOSFET P-CH 30V 0.1A CST3
auf Bestellung 885 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J16CT(TPL3) SSM3J16CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J16CT Description: MOSFET P-CH 20V 0.1A CST3
auf Bestellung 9153 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J304T(TE85L,F) SSM3J304T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=7567&prodName=SSM3J304T Description: MOSFET P-CH 20V 2.3A TSM
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J306T(TE85L,F) SSM3J306T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=7571&prodName=SSM3J306T Description: MOSFET P-CH 30V 2.4A TSM
Produkt ist nicht verfügbar
SSM3J325F,LF SSM3J325F,LF Toshiba Semiconductor and Storage SSM3J325F_datasheet_en_20161110.pdf?did=2054&prodName=SSM3J325F Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 5225 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
40+ 0.66 EUR
100+ 0.33 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 28
SSM3J35MFV,L3F SSM3J35MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=10000&prodName=SSM3J35MFV Description: MOSFET P-CH 20V 100MA VESM
Produkt ist nicht verfügbar
RN1117(T5L,F,T) docget.jsp?did=18763&prodName=RN1115
RN1117(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Produkt ist nicht verfügbar
RN1118(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1114
RN1118(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1130MFV,L3F docget.jsp?did=949&prodName=RN1130MFV
RN1130MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Produkt ist nicht verfügbar
RN1131MFV(TL3,T)
RN1131MFV(TL3,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 100 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.49 EUR
73+ 0.36 EUR
136+ 0.19 EUR
500+ 0.15 EUR
1000+ 0.1 EUR
2000+ 0.087 EUR
Mindestbestellmenge: 53
RN1301,LF docget.jsp?did=18776&prodName=RN1301
RN1301,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 1785 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
59+0.44 EUR
65+ 0.41 EUR
118+ 0.22 EUR
500+ 0.14 EUR
1000+ 0.093 EUR
Mindestbestellmenge: 59
RN1303(TE85L,F) docget.jsp?did=18776&prodName=RN1302
RN1303(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 1627 Stücke:
Lieferzeit 21-28 Tag (e)
RN1308,LF docget.jsp?did=18778&prodName=RN1308
RN1308,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 7466 Stücke:
Lieferzeit 21-28 Tag (e)
RN1309(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1307
RN1309(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 1995 Stücke:
Lieferzeit 21-28 Tag (e)
RN1310(TE85L,F) docget.jsp?did=18781&prodName=RN1310
RN1310(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 2626 Stücke:
Lieferzeit 21-28 Tag (e)
RN1312(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1312
RN1312(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN1313(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1312
RN1313(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W USM
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)
RN1314(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1314
RN1314(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 2975 Stücke:
Lieferzeit 21-28 Tag (e)
RN1316,LF docget.jsp?type=datasheet&lang=en&pid=RN1314
RN1316,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 618 Stücke:
Lieferzeit 21-28 Tag (e)
RN1317(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1314
RN1317(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 2925 Stücke:
Lieferzeit 21-28 Tag (e)
RN1318(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1314
RN1318(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 2835 Stücke:
Lieferzeit 21-28 Tag (e)
RN1413(TE85L,F) docget.jsp?did=18794&prodName=RN1412
RN1413(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
auf Bestellung 5675 Stücke:
Lieferzeit 21-28 Tag (e)
RN1507(TE85L,F)
RN1507(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
auf Bestellung 4478 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
45+ 0.58 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 32
RN1602(TE85L,F) docget.jsp?did=18809&prodName=RN1601
RN1602(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SM6
auf Bestellung 5560 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
43+ 0.61 EUR
100+ 0.31 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 30
RN1903,LF(CT RN190x.pdf
RN1903,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
Mindestbestellmenge: 40
RN1904(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1902
RN1904(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN US6
auf Bestellung 2960 Stücke:
Lieferzeit 21-28 Tag (e)
RN1906(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1906(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN1961FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1961FE
RN1961FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
RN1962FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1962FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 3850 Stücke:
Lieferzeit 21-28 Tag (e)
RN1963FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1963FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 915 Stücke:
Lieferzeit 21-28 Tag (e)
RN1964FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1964FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 3970 Stücke:
Lieferzeit 21-28 Tag (e)
RN1966FE(TE85L,F) docget.jsp?did=19072&prodName=RN1965FE
RN1966FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
RN2301,LF docget.jsp?did=18998&prodName=RN2301
RN2301,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A USM
auf Bestellung 13 Stücke:
Lieferzeit 21-28 Tag (e)
RN2303(TE85L,F) RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2303(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 367 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
58+ 0.45 EUR
119+ 0.22 EUR
Mindestbestellmenge: 40
RN2304(TE85L,F) RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2304(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2305(TE85L,F) RN2301_datasheet_en_20210824.pdf?did=18998&prodName=RN2301
RN2305(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
58+ 0.45 EUR
Mindestbestellmenge: 40
RN2307(TE85L,F) RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2307(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2309(TE85L,F) RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2309(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 2698 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
58+ 0.45 EUR
119+ 0.22 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 40
RN2311(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2310
RN2311(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 2650 Stücke:
Lieferzeit 21-28 Tag (e)
RN2312(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2312
RN2312(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN2313(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2312
RN2313(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN2314(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2314
RN2314(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)
RN2316(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2314
RN2316(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN2317(TE85L,F) docget.jsp?did=18872&prodName=RN2318
RN2317(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A USM
auf Bestellung 2565 Stücke:
Lieferzeit 21-28 Tag (e)
RN2318(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2314
RN2318(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
RN2506(TE85L,F) RN2501_datasheet_en_20191119.pdf?did=18887&prodName=RN2501
RN2506(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SMV
auf Bestellung 3171 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
46+ 0.58 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 32
RN2711(TE85L,F) docget.jsp?did=18905&prodName=RN2711
RN2711(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W USV
Produkt ist nicht verfügbar
RN4603(TE85L,F) docget.jsp?did=18926&prodName=RN4603
RN4603(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SM6
Part Status: Active
Produkt ist nicht verfügbar
RN4606(TE85L,F) RN4606_datasheet_en_20191101.pdf?did=18932&prodName=RN4606
RN4606(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SM6
Part Status: Active
auf Bestellung 3939 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
43+ 0.61 EUR
100+ 0.31 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 30
RN4906(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4906
RN4906(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
RN4981,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4981
RN4981,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 7895 Stücke:
Lieferzeit 21-28 Tag (e)
RN4983(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4983
RN4983(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN PNP 50V 100MA US6
Produkt ist nicht verfügbar
RN4984(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4984
RN4984(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
RN4985,LF(CT RN4985_datasheet_en_20210824.pdf?did=18981&prodName=RN4985
RN4985,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 2981 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
61+ 0.43 EUR
124+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 40
RN4986(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4986
RN4986(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 2730 Stücke:
Lieferzeit 21-28 Tag (e)
RN4988(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4988
RN4988(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN4989(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4989
RN4989(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN4990(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4990
RN4990(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RN4991(T5L,F,T) docget.jsp?did=18994&prodName=RN4991
RN4991(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
SSM3J118TU(TE85L) docget.jsp?did=7050&prodName=SSM3J118TU
SSM3J118TU(TE85L)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 1.4A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 650mA, 10V
Power Dissipation (Max): 500mW (Ta)
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
auf Bestellung 104 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
36+ 0.74 EUR
100+ 0.5 EUR
Mindestbestellmenge: 29
SSM3J15CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3J15CT
SSM3J15CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 0.1A CST3
auf Bestellung 885 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J16CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3J16CT
SSM3J16CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.1A CST3
auf Bestellung 9153 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J304T(TE85L,F) docget.jsp?did=7567&prodName=SSM3J304T
SSM3J304T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2.3A TSM
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3J306T(TE85L,F) docget.jsp?did=7571&prodName=SSM3J306T
SSM3J306T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.4A TSM
Produkt ist nicht verfügbar
SSM3J325F,LF SSM3J325F_datasheet_en_20161110.pdf?did=2054&prodName=SSM3J325F
SSM3J325F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
auf Bestellung 5225 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
40+ 0.66 EUR
100+ 0.33 EUR
500+ 0.27 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 28
SSM3J35MFV,L3F docget.jsp?did=10000&prodName=SSM3J35MFV
SSM3J35MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 100MA VESM
Produkt ist nicht verfügbar
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