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2SK2034TE85LF 2SK2034TE85LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 100MA SC70
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Supplier Device Package: SC-70
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SK3079ATE12LQ 2SK3079ATE12LQ Toshiba Semiconductor and Storage docget.jsp?did=17923&prodName=2SK3079A Description: MOSF RF N CH 10V PW-X
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2SK3475TE12LF 2SK3475TE12LF Toshiba Semiconductor and Storage docget.jsp?did=17925&prodName=2SK3475 Description: MOSF RF N CH 20V 1A PW-MINI
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2SK880GRTE85LF 2SK880GRTE85LF Toshiba Semiconductor and Storage 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880 Description: JFET N-CH 50V SC70
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: SC-70
Voltage - Breakdown (V(BR)GSS): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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DF2S6.2FS,L3M DF2S6.2FS,L3M Toshiba Semiconductor and Storage docget.jsp?did=22218&prodName=DF2S6.2FS Description: TVS DIODE 5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
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DF3A6.2FUTE85LF DF3A6.2FUTE85LF Toshiba Semiconductor and Storage DF3A6.2FU_datasheet_en_20140301.pdf?did=22225&prodName=DF3A6.2FU Description: TVS DIODE 3VWM USM
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 2
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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DF5A5.6CFUTE85LF DF5A5.6CFUTE85LF Toshiba Semiconductor and Storage DF5A5.6CFU_datasheet_en_20140301.pdf?did=350&prodName=DF5A5.6CFU Description: TVS DIODE 3.5VWM USV
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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DF5A5.6FTE85LF DF5A5.6FTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A5.6F Description: TVS DIODE 2.5VWM SMV
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DF5A5.6FUTE85LF DF5A5.6FUTE85LF Toshiba Semiconductor and Storage DF5A5.6FU_datasheet_en_20140301.pdf?did=22252&prodName=DF5A5.6FU Description: TVS DIODE 2.5VWM USV
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 2.5V
Capacitance @ Frequency: 65pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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DF5A6.2LFUTE85LF DF5A6.2LFUTE85LF Toshiba Semiconductor and Storage DF5A6.2LFU_datasheet_en_20140301.pdf?did=22261&prodName=DF5A6.2LFU Description: TVS DIODE 5VWM USV
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.9V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6.5pF @ 1MHz
Applications: General Purpose
Packaging: Cut Tape (CT)
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DF5A6.8FUTE85LF DF5A6.8FUTE85LF Toshiba Semiconductor and Storage DF5A6.8FU_datasheet_en_20140301.pdf?did=3419&prodName=DF5A6.8FU Description: TVS DIODE 5VWM USV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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DF5A6.8LFUTE85LF DF5A6.8LFUTE85LF Toshiba Semiconductor and Storage DF5A6.8LFU_datasheet_en_20140301.pdf?did=3424&prodName=DF5A6.8LFU Description: TVS DIODE 5VWM USV
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Power Line Protection: No
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 4
Supplier Device Package: 5-SSOP
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6pF @ 1MHz
Applications: General Purpose
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HN1B01FU-GR,LF HN1B01FU-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19148&prodName=HN1B01FU Description: TRANS NPN/PNP 50V 0.15A US6-PLN
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HN1C01FU-GR,LF HN1C01FU-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19152&prodName=HN1C01FU Description: TRANS 2NPN DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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HN1C01FYTE85LF HN1C01FYTE85LF Toshiba Semiconductor and Storage docget.jsp?did=19165&prodName=HN1C01F Description: TRANS 2NPN 50V 0.15A SM6
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HN1D03FTE85LF HN1D03FTE85LF Toshiba Semiconductor and Storage HN1D03F_datasheet_en_20210625.pdf?did=3639&prodName=HN1D03F Description: DIODE ARRAY GP 80V 100MA SC-74
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-74
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
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HN1D04FUTE85LF HN1D04FUTE85LF Toshiba Semiconductor and Storage HN1D04FU_datasheet_en_20140301.pdf?did=21822&prodName=HN1D04FU Description: DIODE ARRAY GP 80V 100MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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HN2C01FEYTE85LF HN2C01FEYTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2C01FE Description: TRANS 2NPN 50V 0.15A ES6
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HN2D01FTE85LF HN2D01FTE85LF Toshiba Semiconductor and Storage HN2D01F_datasheet_en_20210625.pdf?did=3462&prodName=HN2D01F Description: DIODE ARRAY GP 80V 80MA SC74
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-74
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 3 Independent
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 4 ns
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HN2S01FUTE85LF HN2S01FUTE85LF Toshiba Semiconductor and Storage HN2S01FU_datasheet_en_20140301.pdf?did=3705&prodName=HN2S01FU Description: DIODE ARR SCHOTT 10V 100MA US6
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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HN2S03FUTE85LF HN2S03FUTE85LF Toshiba Semiconductor and Storage HN2S03FU_datasheet_en_20140301.pdf?did=21837&prodName=HN2S03FU Description: DIODE ARRAY SCHOTT 20V 50MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 50mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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HN3C10FUTE85LF HN3C10FUTE85LF Toshiba Semiconductor and Storage Description: RF TRANS 2 NPN 12V 7GHZ US6
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HN4A51JTE85LF HN4A51JTE85LF Toshiba Semiconductor and Storage HN4A51J_datasheet_en_20140301.pdf?did=22329&prodName=HN4A51J Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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HN4K03JUTE85LF HN4K03JUTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN4K03JU Description: MOSFET N-CH 20V 0.1A USV
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JDH2S01FSTPL3 JDH2S01FSTPL3 Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=JDH2S01FS Description: DIODE SCHOTTKY 4V 25MA FSC
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JDH2S02FSTPL3 JDH2S02FSTPL3 Toshiba Semiconductor and Storage JDH2S02FS_datasheet_en_20170803.pdf?did=6616&prodName=JDH2S02FS Description: RF DIODE SCHOTTKY 10V FSC
Current - Max: 10 mA
Part Status: Not For New Designs
Supplier Device Package: fSC
Voltage - Peak Reverse (Max): 10V
Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
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JDH3D01STE85LF JDH3D01STE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=JDH3D01S Description: DIODE SCHOTTKY 4V 25MA SSM
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JDV2S07FSTPL3 JDV2S07FSTPL3 Toshiba Semiconductor and Storage Description: DIODE VARICAP VCO 10V FSC
Part Status: Active
Supplier Device Package: fSC
Voltage - Peak Reverse (Max): 10V
Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Single
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Capacitance Ratio: 2.3
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio Condition: C1/C4
Mounting Type: Surface Mount
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JDV2S09FSTPL3 JDV2S09FSTPL3 Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=JDV2S09FS Description: DIODE STANDARD 10V FSC
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RN1412TE85LF RN1412TE85LF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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RN1441ATE85LF RN1441ATE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1441 Description: TRANS PREBIAS NPN 0.2W S-MINI
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RN1442ATE85LF RN1442ATE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1441 Description: TRANS PREBIAS NPN 0.2W S-MINI
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RN1444ATE85LF RN1444ATE85LF Toshiba Semiconductor and Storage docget.jsp?did=18800&prodName=RN1441 Description: TRANS PREBIAS NPN 20V 0.3A SMINI
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RN1605TE85LF RN1605TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18809&prodName=RN1604 Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
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RN1901FETE85LF RN1901FETE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1901FE Description: TRANS 2NPN PREBIAS 0.1W ES6
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RN1902T5LFT RN1902T5LFT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS 2NPN PREBIAS 0.2W US6
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RN1911FETE85LF RN1911FETE85LF Toshiba Semiconductor and Storage docget.jsp?did=19070&prodName=RN1910FE Description: TRANS 2NPN PREBIAS 0.1W ES6
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RN1962TE85LF RN1962TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18830&prodName=RN1961 Description: TRANS 2NPN PREBIAS 0.5W US6
Produkt ist nicht verfügbar
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RN1964TE85LF RN1964TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18830&prodName=RN1961 Description: TRANS 2NPN PREBIAS 0.2W US6
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RN1971TE85LF RN1971TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18834&prodName=RN1971 Description: TRANS 2NPN PREBIAS 0.2W US6
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RN2404TE85LF RN2404TE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2403 Description: TRANS PREBIAS PNP 0.2W S-MINI
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RN2505TE85LF RN2505TE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2501 Description: TRANS 2PNP PREBIAS 0.3W SMV
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RN2702TE85LF RN2702TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2701 Description: TRANS 2PNP PREBIAS 0.2W USV
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RN4602TE85LF RN4602TE85LF Toshiba Semiconductor and Storage docget.jsp?did=18922&prodName=RN4602 Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
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RN4905T5LFT RN4905T5LFT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4905 Description: TRANS NPN/PNP PREBIAS 0.2W US6
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RN4982,LF(CT RN4982,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18974&prodName=RN4982 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
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RN4987T5LFT RN4987T5LFT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4987 Description: TRANS NPN PNP 50V 100MA US6
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RN49A2,LF(CT RN49A2,LF(CT Toshiba Semiconductor and Storage RN49A2_datasheet_en_20200107.pdf?did=19067&prodName=RN49A2 Description: TRANS NPN/PNP PREBIAS 0.2W US6
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46+0.46 EUR
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SSM3J14TTE85LF SSM3J14TTE85LF Toshiba Semiconductor and Storage docget.jsp?did=19580&prodName=SSM3J14T Description: MOSFET P-CH 30V 2.7A TSM
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSM
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Produkt ist nicht verfügbar
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SSM5N16FUTE85LF SSM5N16FUTE85LF Toshiba Semiconductor and Storage SSM5N16FU_datasheet_en_20140301.pdf?did=19730&prodName=SSM5N16FU Description: MOSFET N-CH 20V 100MA USV
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: 5-SSOP
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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SSM6J08FUTE85LF SSM6J08FUTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6J08FU Description: MOSFET P-CH 20V 1.3A US6
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SSM6L09FUTE85LF SSM6L09FUTE85LF Toshiba Semiconductor and Storage SSM6L09FU_datasheet_en_20140301.pdf?did=19737&prodName=SSM6L09FU Description: MOSFET N/P-CH 30V 0.4A US6
Part Status: Not For New Designs
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 53604 Stücke:
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SSM6N16FUTE85LF SSM6N16FUTE85LF Toshiba Semiconductor and Storage docget.jsp?did=19752&prodName=SSM6N16FU Description: MOSFET 2N-CH 20V 0.1A US6
auf Bestellung 5370 Stücke:
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TA75S01F,LF TA75S01F,LF Toshiba Semiconductor and Storage TA75S01F_datasheet_en_20230417.pdf?did=20983&prodName=TA75S01F Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMV
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Gain Bandwidth Product: 300 kHz
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
auf Bestellung 5630 Stücke:
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24+0.9 EUR
29+0.74 EUR
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TAR5S28UTE85LF TAR5S28UTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TAR5S28U Description: IC REG LDO 2.8V 0.2A UFV
auf Bestellung 1942 Stücke:
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TAR5S30UTE85LF TAR5S30UTE85LF Toshiba Semiconductor and Storage TAR5S30U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S30U Description: IC REG LINEAR 3V 200MA UFV
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
auf Bestellung 865 Stücke:
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20+1.07 EUR
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TAR5S33UTE85LF TAR5S33UTE85LF Toshiba Semiconductor and Storage docget.jsp?did=764&prodName=TAR5S26U Description: IC REG LINEAR 3.3V 200MA UFV
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
auf Bestellung 31654 Stücke:
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TAR5S40UTE85LF TAR5S40UTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TAR5S40U Description: IC REG LDO 4V 0.2A UFV
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TAR5S45UTE85LF TAR5S45UTE85LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 4.5V 200MA UFV
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 4.5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TAR5S50UTE85LF TAR5S50UTE85LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 5V 200MA UFV
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
auf Bestellung 19619 Stücke:
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21+1.02 EUR
24+0.88 EUR
26+0.82 EUR
100+0.65 EUR
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2SK2034TE85LF
2SK2034TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA SC70
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Supplier Device Package: SC-70
Power Dissipation (Max): 100mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SK3079ATE12LQ docget.jsp?did=17923&prodName=2SK3079A
2SK3079ATE12LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 10V PW-X
Produkt ist nicht verfügbar
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2SK3475TE12LF docget.jsp?did=17925&prodName=2SK3475
2SK3475TE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 20V 1A PW-MINI
Produkt ist nicht verfügbar
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2SK880GRTE85LF 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880
2SK880GRTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Power - Max: 100 mW
Part Status: Active
Supplier Device Package: SC-70
Voltage - Breakdown (V(BR)GSS): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
FET Type: N-Channel
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5411 Stücke:
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DF2S6.2FS,L3M docget.jsp?did=22218&prodName=DF2S6.2FS
DF2S6.2FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 1742 Stücke:
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72+0.3 EUR
114+0.18 EUR
184+0.11 EUR
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DF3A6.2FUTE85LF DF3A6.2FU_datasheet_en_20140301.pdf?did=22225&prodName=DF3A6.2FU
DF3A6.2FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USM
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 2
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
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40+0.52 EUR
65+0.32 EUR
104+0.2 EUR
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DF5A5.6CFUTE85LF DF5A5.6CFU_datasheet_en_20140301.pdf?did=350&prodName=DF5A5.6CFU
DF5A5.6CFUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 3.5V
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 2780 Stücke:
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30+0.71 EUR
49+0.43 EUR
100+0.27 EUR
500+0.2 EUR
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DF5A5.6FTE85LF docget.jsp?type=datasheet&lang=en&pid=DF5A5.6F
DF5A5.6FTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM SMV
auf Bestellung 6954 Stücke:
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DF5A5.6FUTE85LF DF5A5.6FU_datasheet_en_20140301.pdf?did=22252&prodName=DF5A5.6FU
DF5A5.6FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM USV
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 2.5V
Capacitance @ Frequency: 65pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 7135 Stücke:
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48+0.44 EUR
71+0.3 EUR
151+0.14 EUR
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DF5A6.2LFUTE85LF DF5A6.2LFU_datasheet_en_20140301.pdf?did=22261&prodName=DF5A6.2LFU
DF5A6.2LFUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Part Status: Active
Power Line Protection: No
Voltage - Breakdown (Min): 5.9V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6.5pF @ 1MHz
Applications: General Purpose
Packaging: Cut Tape (CT)
auf Bestellung 1289 Stücke:
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46+0.46 EUR
66+0.32 EUR
137+0.15 EUR
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DF5A6.8FUTE85LF DF5A6.8FU_datasheet_en_20140301.pdf?did=3419&prodName=DF5A6.8FU
DF5A6.8FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: USV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 4167 Stücke:
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48+0.44 EUR
71+0.3 EUR
149+0.14 EUR
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DF5A6.8LFUTE85LF DF5A6.8LFU_datasheet_en_20140301.pdf?did=3424&prodName=DF5A6.8LFU
DF5A6.8LFUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Power Line Protection: No
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 4
Supplier Device Package: 5-SSOP
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 6pF @ 1MHz
Applications: General Purpose
auf Bestellung 26136 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
61+0.35 EUR
119+0.18 EUR
500+0.17 EUR
1000+0.15 EUR
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HN1B01FU-GR,LF docget.jsp?did=19148&prodName=HN1B01FU
HN1B01FU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6-PLN
auf Bestellung 2982 Stücke:
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32+0.67 EUR
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HN1C01FU-GR,LF docget.jsp?did=19152&prodName=HN1C01FU
HN1C01FU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2860 Stücke:
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44+0.48 EUR
72+0.3 EUR
115+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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HN1C01FYTE85LF docget.jsp?did=19165&prodName=HN1C01F
HN1C01FYTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SM6
auf Bestellung 2801 Stücke:
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HN1D03FTE85LF HN1D03F_datasheet_en_20210625.pdf?did=3639&prodName=HN1D03F
HN1D03FTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-74
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-74
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair CA + CC
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
auf Bestellung 23738 Stücke:
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38+0.57 EUR
57+0.37 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
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HN1D04FUTE85LF HN1D04FU_datasheet_en_20140301.pdf?did=21822&prodName=HN1D04FU
HN1D04FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 1.6 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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HN2C01FEYTE85LF docget.jsp?type=datasheet&lang=en&pid=HN2C01FE
HN2C01FEYTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
auf Bestellung 3930 Stücke:
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HN2D01FTE85LF HN2D01F_datasheet_en_20210625.pdf?did=3462&prodName=HN2D01F
HN2D01FTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA SC74
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-74
Current - Average Rectified (Io) (per Diode): 80mA
Diode Configuration: 3 Independent
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Reverse Recovery Time (trr): 4 ns
auf Bestellung 5811 Stücke:
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25+0.86 EUR
34+0.62 EUR
100+0.31 EUR
500+0.27 EUR
1000+0.21 EUR
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HN2S01FUTE85LF HN2S01FU_datasheet_en_20140301.pdf?did=3705&prodName=HN2S01FU
HN2S01FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 10V 100MA US6
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 12445 Stücke:
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38+0.57 EUR
55+0.38 EUR
100+0.25 EUR
500+0.2 EUR
1000+0.18 EUR
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HN2S03FUTE85LF HN2S03FU_datasheet_en_20140301.pdf?did=21837&prodName=HN2S03FU
HN2S03FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA US6
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: US6
Current - Average Rectified (Io) (per Diode): 50mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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HN3C10FUTE85LF
HN3C10FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS 2 NPN 12V 7GHZ US6
auf Bestellung 101 Stücke:
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20+1.07 EUR
23+0.92 EUR
100+0.69 EUR
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HN4A51JTE85LF HN4A51J_datasheet_en_20140301.pdf?did=22329&prodName=HN4A51J
HN4A51JTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Supplier Device Package: SMV
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 7492 Stücke:
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19+1.13 EUR
30+0.7 EUR
100+0.44 EUR
500+0.33 EUR
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HN4K03JUTE85LF docget.jsp?type=datasheet&lang=en&pid=HN4K03JU
HN4K03JUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 0.1A USV
Produkt ist nicht verfügbar
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JDH2S01FSTPL3 docget.jsp?type=datasheet&lang=en&pid=JDH2S01FS
JDH2S01FSTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 4V 25MA FSC
auf Bestellung 7995 Stücke:
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JDH2S02FSTPL3 JDH2S02FS_datasheet_en_20170803.pdf?did=6616&prodName=JDH2S02FS
JDH2S02FSTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE SCHOTTKY 10V FSC
Current - Max: 10 mA
Part Status: Not For New Designs
Supplier Device Package: fSC
Voltage - Peak Reverse (Max): 10V
Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 15 Stücke:
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JDH3D01STE85LF docget.jsp?type=datasheet&lang=en&pid=JDH3D01S
JDH3D01STE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 4V 25MA SSM
auf Bestellung 2064 Stücke:
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JDV2S07FSTPL3
JDV2S07FSTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARICAP VCO 10V FSC
Part Status: Active
Supplier Device Package: fSC
Voltage - Peak Reverse (Max): 10V
Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Single
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
Capacitance Ratio: 2.3
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio Condition: C1/C4
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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JDV2S09FSTPL3 docget.jsp?type=datasheet&lang=en&pid=JDV2S09FS
JDV2S09FSTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 10V FSC
auf Bestellung 2750 Stücke:
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RN1412TE85LF
RN1412TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
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42+0.5 EUR
70+0.3 EUR
112+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 42 Stücke
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RN1441ATE85LF docget.jsp?type=datasheet&lang=en&pid=RN1441
RN1441ATE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 2368 Stücke:
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RN1442ATE85LF docget.jsp?type=datasheet&lang=en&pid=RN1441
RN1442ATE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.2W S-MINI
auf Bestellung 2450 Stücke:
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RN1444ATE85LF docget.jsp?did=18800&prodName=RN1441
RN1444ATE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 20V 0.3A SMINI
Produkt ist nicht verfügbar
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RN1605TE85LF docget.jsp?did=18809&prodName=RN1604
RN1605TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.3W SM6
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
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RN1901FETE85LF docget.jsp?type=datasheet&lang=en&pid=RN1901FE
RN1901FETE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 16104 Stücke:
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RN1902T5LFT RN190x.pdf
RN1902T5LFT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2805 Stücke:
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RN1911FETE85LF docget.jsp?did=19070&prodName=RN1910FE
RN1911FETE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 3635 Stücke:
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RN1962TE85LF docget.jsp?did=18830&prodName=RN1961
RN1962TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.5W US6
Produkt ist nicht verfügbar
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RN1964TE85LF docget.jsp?did=18830&prodName=RN1961
RN1964TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 2840 Stücke:
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30+0.71 EUR
39+0.54 EUR
100+0.31 EUR
500+0.2 EUR
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RN1971TE85LF docget.jsp?did=18834&prodName=RN1971
RN1971TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
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RN2404TE85LF docget.jsp?type=datasheet&lang=en&pid=RN2403
RN2404TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.2W S-MINI
auf Bestellung 5385 Stücke:
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RN2505TE85LF docget.jsp?type=datasheet&lang=en&pid=RN2501
RN2505TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.3W SMV
auf Bestellung 2925 Stücke:
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RN2702TE85LF docget.jsp?did=18900&prodName=RN2701
RN2702TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W USV
Produkt ist nicht verfügbar
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RN4602TE85LF docget.jsp?did=18922&prodName=RN4602
RN4602TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.3W SM6
Part Status: Active
Supplier Device Package: SM6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RN4905T5LFT docget.jsp?type=datasheet&lang=en&pid=RN4905
RN4905T5LFT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 2900 Stücke:
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RN4982,LF(CT docget.jsp?did=18974&prodName=RN4982
RN4982,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz, 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 3847 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
45+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.13 EUR
Mindestbestellmenge: 31 Stücke
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RN4987T5LFT docget.jsp?type=datasheet&lang=en&pid=RN4987
RN4987T5LFT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN PNP 50V 100MA US6
Produkt ist nicht verfügbar
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RN49A2,LF(CT RN49A2_datasheet_en_20200107.pdf?did=19067&prodName=RN49A2
RN49A2,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
46+0.46 EUR
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SSM3J14TTE85LF docget.jsp?did=19580&prodName=SSM3J14T
SSM3J14TTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.7A TSM
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 413 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TSM
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Produkt ist nicht verfügbar
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SSM5N16FUTE85LF SSM5N16FU_datasheet_en_20140301.pdf?did=19730&prodName=SSM5N16FU
SSM5N16FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USV
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: 5-SSOP
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM6J08FUTE85LF docget.jsp?type=datasheet&lang=en&pid=SSM6J08FU
SSM6J08FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.3A US6
Produkt ist nicht verfügbar
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SSM6L09FUTE85LF SSM6L09FU_datasheet_en_20140301.pdf?did=19737&prodName=SSM6L09FU
SSM6L09FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 0.4A US6
Part Status: Not For New Designs
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C: 400mA, 200mA
Drain to Source Voltage (Vdss): 30V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 53604 Stücke:
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AnzahlPrivatkunde
24+0.88 EUR
39+0.54 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
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SSM6N16FUTE85LF docget.jsp?did=19752&prodName=SSM6N16FU
SSM6N16FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.1A US6
auf Bestellung 5370 Stücke:
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TA75S01F,LF TA75S01F_datasheet_en_20230417.pdf?did=20983&prodName=TA75S01F
TA75S01F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 12 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 1
Part Status: Active
Supplier Device Package: SMV
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Gain Bandwidth Product: 300 kHz
Current - Supply: 400µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
auf Bestellung 5630 Stücke:
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24+0.9 EUR
29+0.74 EUR
31+0.68 EUR
100+0.51 EUR
250+0.46 EUR
500+0.38 EUR
1000+0.29 EUR
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TAR5S28UTE85LF docget.jsp?type=datasheet&lang=en&pid=TAR5S28U
TAR5S28UTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.8V 0.2A UFV
auf Bestellung 1942 Stücke:
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TAR5S30UTE85LF TAR5S30U_datasheet_en_20220801.pdf?did=764&prodName=TAR5S30U
TAR5S30UTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA UFV
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
auf Bestellung 865 Stücke:
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20+1.07 EUR
23+0.92 EUR
25+0.86 EUR
100+0.68 EUR
250+0.63 EUR
500+0.54 EUR
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TAR5S33UTE85LF docget.jsp?did=764&prodName=TAR5S26U
TAR5S33UTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA UFV
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
auf Bestellung 31654 Stücke:
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29+0.74 EUR
42+0.5 EUR
47+0.45 EUR
100+0.39 EUR
250+0.36 EUR
500+0.35 EUR
1000+0.33 EUR
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TAR5S40UTE85LF docget.jsp?type=datasheet&lang=en&pid=TAR5S40U
TAR5S40UTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 4V 0.2A UFV
auf Bestellung 2019 Stücke:
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TAR5S45UTE85LF
TAR5S45UTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA UFV
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 4.5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TAR5S50UTE85LF
TAR5S50UTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA UFV
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 850 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.2V @ 50mA
PSRR: 70dB (1kHz)
Part Status: Active
auf Bestellung 19619 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
24+0.88 EUR
26+0.82 EUR
100+0.65 EUR
250+0.61 EUR
500+0.51 EUR
1000+0.39 EUR
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