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TC4S11FT5LFT TC4S11FT5LFT Toshiba Semiconductor and Storage TC4S11F.pdf Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC4SU69FT5LFT TC4SU69FT5LFT Toshiba Semiconductor and Storage docget.jsp?did=20167&prodName=TC4SU69F Description: IC GATE INVERTER SGL SSOP5
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TC4W53FUTE12LF TC4W53FUTE12LF Toshiba Semiconductor and Storage docget.jsp?did=20175&prodName=TC4W53FU Description: IC MUX/DEMUX DUAL 1X1 8SSOP
Produkt ist nicht verfügbar
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TC4W66FU,LF TC4W66FU,LF Toshiba Semiconductor and Storage docget.jsp?did=20173&prodName=TC4W66FU Description: IC SWITCH SPST-NOX2 160OHM 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
auf Bestellung 40132 Stücke:
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62+0.29 EUR
70+0.25 EUR
100+0.22 EUR
250+0.20 EUR
500+0.19 EUR
1000+0.18 EUR
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TC75S101F(TE85L,F) TC75S101F(TE85L,F) Toshiba Semiconductor and Storage TC75S101F_FU_FE_2014-03-01.pdf Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 63µA
Slew Rate: 0.15V/µs
Current - Input Bias: 0.1 pA
Voltage - Input Offset: 1.2 mV
Supplier Device Package: SMV
Number of Circuits: 1
Current - Output / Channel: 1.5 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
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TC75S51F,LF TC75S51F,LF Toshiba Semiconductor and Storage TC75S51F_datasheet_en_20190911.pdf?did=21004&prodName=TC75S51F Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 60µA
Slew Rate: 0.5V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SMV
Part Status: Active
Number of Circuits: 1
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 7 V
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TC75S51FU(TE85L,F) TC75S51FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC75S51F Description: IC OPAMP GP 5SSOP
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TC7S02FUT5LFT TC7S02FUT5LFT Toshiba Semiconductor and Storage docget.jsp?did=20182&prodName=TC7S02FU Description: IC GATE NOR 1CH 2-INP USV
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TC7S04FU,LF TC7S04FU,LF Toshiba Semiconductor and Storage docget.jsp?did=20188&prodName=TC7S04F Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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TC7SH86F,LJ(CT TC7SH86F,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=20106&prodName=TC7SH86F Description: IC GATE XOR 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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TC7S86FUT5LFT TC7S86FUT5LFT Toshiba Semiconductor and Storage Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC7SH04FUT5LJFT TC7SH04FUT5LJFT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH04FU Description: IC INVERTER SNGL USV
Produkt ist nicht verfügbar
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TC7SH14FU,LJ(CT TC7SH14FU,LJ(CT Toshiba Semiconductor and Storage TC7SH14FU_datasheet_en_20170516.pdf?did=30516&prodName=TC7SH14FU Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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TC7SHU04FU5LJFT TC7SHU04FU5LJFT Toshiba Semiconductor and Storage Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.3V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7W14FU,LF TC7W14FU,LF Toshiba Semiconductor and Storage TC7W14FK_datasheet_en_20141110.pdf?did=20210&prodName=TC7W14FK Description: IC INVERT SCHMITT 3CH 3INP 8SSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
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TC7W241FUTE12LF TC7W241FUTE12LF Toshiba Semiconductor and Storage docget.jsp?did=20228&prodName=TC7W241FU Description: IC BUFFER NON-INVERT 6V SM8
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TC7W53FUTE12LF TC7W53FUTE12LF Toshiba Semiconductor and Storage 7442.pdf Description: IC MUX/DEMUX 1X2 8SSOP
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TC7WT126FU,LF TC7WT126FU,LF Toshiba Semiconductor and Storage TC7WT126FU.pdf Description: IC BUFFER NON-INVERT 5.5V SM8
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TC7WT240FUTE12LF TC7WT240FUTE12LF Toshiba Semiconductor and Storage docget.jsp?did=20093&prodName=TC7WT240FU Description: IC BUFFER INVERT 5.5V SM8
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TC7WT241FUTE12LF TC7WT241FUTE12LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WT241FU Description: IC BUS BUFFER TRI-ST N-INV SM8
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TC7WT74FUTE12LF TC7WT74FUTE12LF Toshiba Semiconductor and Storage TC7WT4FU.pdf Description: IC FLIP FLOP D PRESET/CLR 8SSOP
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1SS196(TE85L,F) 1SS196(TE85L,F) Toshiba Semiconductor and Storage 1SS196_datasheet_en_20210625.pdf?did=3274&prodName=1SS196 Description: DIODE STANDARD 80V 100MA SC593
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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1SS190TE85LF 1SS190TE85LF Toshiba Semiconductor and Storage 1SS190_datasheet_en_20221128.pdf?did=3270&prodName=1SS190 Description: DIODE GEN PURP 80V 100MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 41585 Stücke:
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1SS302TE85LF 1SS302TE85LF Toshiba Semiconductor and Storage 1SS302.pdf Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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1SS306TE85LF 1SS306TE85LF Toshiba Semiconductor and Storage 1SS306_datasheet_en_20221020.pdf?did=3298&prodName=1SS306 Description: DIODE ARRAY GP 200V 100MA SC61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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1SS360(T5L,F,T) 1SS360(T5L,F,T) Toshiba Semiconductor and Storage Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS362TE85LF 1SS362TE85LF Toshiba Semiconductor and Storage 1SS362FV_datasheet_en_20221202.pdf?did=22527&prodName=1SS362FV Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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1SS367,H3F 1SS367,H3F Toshiba Semiconductor and Storage docget.jsp?did=3342&prodName=1SS367 Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
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1SS370TE85LF 1SS370TE85LF Toshiba Semiconductor and Storage Description: DIODE GEN PURP 200V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1SS379,LF 1SS379,LF Toshiba Semiconductor and Storage 1SS379_datasheet_en_20210625.pdf?did=3356&prodName=1SS379 Description: DIODE ARRAY GP 80V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 29956 Stücke:
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1SS382TE85LF 1SS382TE85LF Toshiba Semiconductor and Storage 1SS382_datasheet_en_20210625.pdf?did=3358&prodName=1SS382 Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 14308 Stücke:
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500+0.18 EUR
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1SS384TE85LF 1SS384TE85LF Toshiba Semiconductor and Storage 1SS384_datasheet_en_20180907.pdf?did=3362&prodName=1SS384 Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 10311 Stücke:
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57+0.31 EUR
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1SS394TE85LF 1SS394TE85LF Toshiba Semiconductor and Storage 1SS394_datasheet_en_20171030.pdf?did=3380&prodName=1SS394 Description: DIODE SCHOTTKY 10V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 6639 Stücke:
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69+0.26 EUR
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1SS397TE85LF 1SS397TE85LF Toshiba Semiconductor and Storage 1SS397_datasheet_en_20210625.pdf?did=3386&prodName=1SS397 Description: DIODE GEN PURP 400V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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1SS398TE85LF 1SS398TE85LF Toshiba Semiconductor and Storage 1SS398_datasheet_en_20210625.pdf?did=3389&prodName=1SS398 Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
auf Bestellung 45005 Stücke:
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35+0.51 EUR
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1SS399TE85LF 1SS399TE85LF Toshiba Semiconductor and Storage docget.jsp?did=3391&prodName=1SS399 Description: DIODE ARRAY GP 400V 100MA SC61B
Produkt ist nicht verfügbar
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1SS402TE85LF 1SS402TE85LF Toshiba Semiconductor and Storage 1SS402_datasheet_en_20140301.pdf?did=3395&prodName=1SS402 Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 24442 Stücke:
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52+0.34 EUR
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1SS404,H3F 1SS404,H3F Toshiba Semiconductor and Storage docget.jsp?did=3400&prodName=1SS404 Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 9503 Stücke:
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63+0.28 EUR
106+0.17 EUR
161+0.11 EUR
500+0.08 EUR
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2SA1163-GR,LF 2SA1163-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19353&prodName=2SA1163 Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 26729 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
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2SA1312GRTE85LF 2SA1312GRTE85LF Toshiba Semiconductor and Storage 2SA1312_datasheet_en_20210625.pdf?did=19263&prodName=2SA1312 Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1587-GR,LF 2SA1587-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19172&prodName=2SA1587 Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 20789 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
88+0.20 EUR
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500+0.09 EUR
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2SA1954BTE85LF 2SA1954BTE85LF Toshiba Semiconductor and Storage Description: TRANS PNP 12V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SA1955FVATPL3Z 2SA1955FVATPL3Z Toshiba Semiconductor and Storage 2SA1955FV.pdf Description: TRANS PNP 12V 0.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
auf Bestellung 2272 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
80+0.22 EUR
115+0.15 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 53
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2SA1955FVBTPL3Z 2SA1955FVBTPL3Z Toshiba Semiconductor and Storage 2SA1955FV.pdf Description: TRANS PNP 12V 0.4A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: VESM
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
auf Bestellung 2695 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
77+0.23 EUR
100+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 63
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2SC2712-OTE85LF 2SC2712-OTE85LF Toshiba Semiconductor and Storage 2SC2712_datasheet_en_20220203.pdf?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 19233 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
100+0.18 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 59
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2SC2713-BL,LF 2SC2713-BL,LF Toshiba Semiconductor and Storage 2SC2713.pdf Description: TRANS NPN 120V 0.1A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 10666 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
71+0.25 EUR
114+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
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2SC2713-GR,LF 2SC2713-GR,LF Toshiba Semiconductor and Storage 2SC2713.pdf Description: TRANS NPN 120V 0.1A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 11720 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
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2SC3324GRTE85LF 2SC3324GRTE85LF Toshiba Semiconductor and Storage 2SC3324.pdf Description: TRANS NPN 120V 0.1A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC3325-Y,LF 2SC3325-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19247&prodName=2SC3325 Description: TRANS NPN 50V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 21439 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
71+0.25 EUR
114+0.15 EUR
500+0.11 EUR
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2SC3326-B,LF 2SC3326-B,LF Toshiba Semiconductor and Storage docget.jsp?did=19249&prodName=2SC3326 Description: TRANS NPN 20V 0.3A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 198480 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
53+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 34
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2SC4116-BL,LF 2SC4116-BL,LF Toshiba Semiconductor and Storage 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 2649 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
113+0.16 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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2SC4213BTE85LF 2SC4213BTE85LF Toshiba Semiconductor and Storage 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213 Description: TRANS NPN 20V 0.3A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
auf Bestellung 7633 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
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2SC5084YTE85LF 2SC5084YTE85LF Toshiba Semiconductor and Storage docget.jsp?did=17653&prodName=2SC5084 Description: RF TRANS NPN 12V 7GHZ SC59
Produkt ist nicht verfügbar
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2SC5087YTE85LF 2SC5087YTE85LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5232BTE85LF 2SC5232BTE85LF Toshiba Semiconductor and Storage Description: TRANS NPN 12V 0.5A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
72+0.24 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 63
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2SC5233BTE85LF 2SC5233BTE85LF Toshiba Semiconductor and Storage Description: TRANS NPN 12V 0.5A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC6026CTGRTPL3 2SC6026CTGRTPL3 Toshiba Semiconductor and Storage docget.jsp?did=713&prodName=2SC6026CT Description: TRANS NPN 50V 0.1A CST3
auf Bestellung 6389 Stücke:
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2SJ168TE85LF 2SJ168TE85LF Toshiba Semiconductor and Storage 2SJ168_datasheet_en_20140301.pdf?did=19506&prodName=2SJ168 Description: MOSFET P-CH 60V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
auf Bestellung 12610 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.58 EUR
17+1.06 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.54 EUR
Mindestbestellmenge: 12
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2SJ305TE85LF 2SJ305TE85LF Toshiba Semiconductor and Storage 2SJ305_datasheet_en_20140301.pdf?did=19508&prodName=2SJ305 Description: MOSFET P-CH 30V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
auf Bestellung 17089 Stücke:
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2SK1828TE85LF 2SK1828TE85LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 50MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
auf Bestellung 1307 Stücke:
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TC4S11FT5LFT TC4S11F.pdf
TC4S11FT5LFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC4SU69FT5LFT docget.jsp?did=20167&prodName=TC4SU69F
TC4SU69FT5LFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE INVERTER SGL SSOP5
Produkt ist nicht verfügbar
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TC4W53FUTE12LF docget.jsp?did=20175&prodName=TC4W53FU
TC4W53FUTE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 1X1 8SSOP
Produkt ist nicht verfügbar
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TC4W66FU,LF docget.jsp?did=20173&prodName=TC4W66FU
TC4W66FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NOX2 160OHM 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
-3db Bandwidth: 30MHz
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Channel Capacitance (CS(off), CD(off)): 0.5pF, 5pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
auf Bestellung 40132 Stücke:
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42+0.42 EUR
62+0.29 EUR
70+0.25 EUR
100+0.22 EUR
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TC75S101F(TE85L,F) TC75S101F_FU_FE_2014-03-01.pdf
TC75S101F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 63µA
Slew Rate: 0.15V/µs
Current - Input Bias: 0.1 pA
Voltage - Input Offset: 1.2 mV
Supplier Device Package: SMV
Number of Circuits: 1
Current - Output / Channel: 1.5 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
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20+0.88 EUR
24+0.76 EUR
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TC75S51F,LF TC75S51F_datasheet_en_20190911.pdf?did=21004&prodName=TC75S51F
TC75S51F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 1 CIRCUIT SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 60µA
Slew Rate: 0.5V/µs
Current - Input Bias: 1 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SMV
Part Status: Active
Number of Circuits: 1
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 7 V
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TC75S51FU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=TC75S51F
TC75S51FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 5SSOP
auf Bestellung 3468 Stücke:
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TC7S02FUT5LFT docget.jsp?did=20182&prodName=TC7S02FU
TC7S02FUT5LFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP USV
auf Bestellung 1847 Stücke:
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TC7S04FU,LF docget.jsp?did=20188&prodName=TC7S04F
TC7S04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 48464 Stücke:
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25+0.72 EUR
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38+0.47 EUR
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TC7SH86F,LJ(CT docget.jsp?did=20106&prodName=TC7SH86F
TC7SH86F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 5840 Stücke:
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24+0.76 EUR
31+0.57 EUR
36+0.50 EUR
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TC7S86FUT5LFT
TC7S86FUT5LFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TC7SH04FUT5LJFT docget.jsp?type=datasheet&lang=en&pid=TC7SH04FU
TC7SH04FUT5LJFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER SNGL USV
Produkt ist nicht verfügbar
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TC7SH14FU,LJ(CT TC7SH14FU_datasheet_en_20170516.pdf?did=30516&prodName=TC7SH14FU
TC7SH14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 55405 Stücke:
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38+0.48 EUR
64+0.28 EUR
78+0.23 EUR
105+0.17 EUR
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TC7SHU04FU5LJFT
TC7SHU04FU5LJFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.3V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7W14FU,LF TC7W14FK_datasheet_en_20141110.pdf?did=20210&prodName=TC7W14FK
TC7W14FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 3CH 3INP 8SSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 9932 Stücke:
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19+0.95 EUR
32+0.56 EUR
39+0.46 EUR
100+0.35 EUR
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TC7W241FUTE12LF docget.jsp?did=20228&prodName=TC7W241FU
TC7W241FUTE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V SM8
auf Bestellung 2271 Stücke:
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25+0.72 EUR
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TC7W53FUTE12LF 7442.pdf
TC7W53FUTE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1X2 8SSOP
auf Bestellung 1000 Stücke:
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TC7WT126FU,LF TC7WT126FU.pdf
TC7WT126FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SM8
auf Bestellung 1126 Stücke:
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24+0.74 EUR
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TC7WT240FUTE12LF docget.jsp?did=20093&prodName=TC7WT240FU
TC7WT240FUTE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V SM8
Produkt ist nicht verfügbar
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TC7WT241FUTE12LF docget.jsp?type=datasheet&lang=en&pid=TC7WT241FU
TC7WT241FUTE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER TRI-ST N-INV SM8
Produkt ist nicht verfügbar
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TC7WT74FUTE12LF TC7WT4FU.pdf
TC7WT74FUTE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC FLIP FLOP D PRESET/CLR 8SSOP
auf Bestellung 2120 Stücke:
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1SS196(TE85L,F) 1SS196_datasheet_en_20210625.pdf?did=3274&prodName=1SS196
1SS196(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SC593
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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1SS190TE85LF 1SS190_datasheet_en_20221128.pdf?did=3270&prodName=1SS190
1SS190TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 41585 Stücke:
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33+0.55 EUR
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1SS302TE85LF 1SS302.pdf
1SS302TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS306TE85LF 1SS306_datasheet_en_20221020.pdf?did=3298&prodName=1SS306
1SS306TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 100MA SC61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 8863 Stücke:
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28+0.65 EUR
40+0.44 EUR
100+0.30 EUR
500+0.23 EUR
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1SS360(T5L,F,T)
1SS360(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS362TE85LF 1SS362FV_datasheet_en_20221202.pdf?did=22527&prodName=1SS362FV
1SS362TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 42055 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
91+0.19 EUR
165+0.11 EUR
500+0.09 EUR
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1SS367,H3F docget.jsp?did=3342&prodName=1SS367
1SS367,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 32514 Stücke:
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Anzahl Preis
84+0.21 EUR
121+0.15 EUR
164+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
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1SS370TE85LF
1SS370TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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1SS379,LF 1SS379_datasheet_en_20210625.pdf?did=3356&prodName=1SS379
1SS379,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 29956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
42+0.43 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.20 EUR
Mindestbestellmenge: 28
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1SS382TE85LF 1SS382_datasheet_en_20210625.pdf?did=3358&prodName=1SS382
1SS382TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 14308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
51+0.35 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 33
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1SS384TE85LF 1SS384_datasheet_en_20180907.pdf?did=3362&prodName=1SS384
1SS384TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 10311 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
57+0.31 EUR
100+0.20 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 36
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1SS394TE85LF 1SS394_datasheet_en_20171030.pdf?did=3380&prodName=1SS394
1SS394TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 6639 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
69+0.26 EUR
125+0.14 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 46
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1SS397TE85LF 1SS397_datasheet_en_20210625.pdf?did=3386&prodName=1SS397
1SS397TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SS398TE85LF 1SS398_datasheet_en_20210625.pdf?did=3389&prodName=1SS398
1SS398TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
auf Bestellung 45005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
35+0.51 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 23
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1SS399TE85LF docget.jsp?did=3391&prodName=1SS399
1SS399TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA SC61B
Produkt ist nicht verfügbar
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1SS402TE85LF 1SS402_datasheet_en_20140301.pdf?did=3395&prodName=1SS402
1SS402TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 24442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
52+0.34 EUR
100+0.21 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 34
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1SS404,H3F docget.jsp?did=3400&prodName=1SS404
1SS404,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 9503 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
106+0.17 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 63
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2SA1163-GR,LF docget.jsp?did=19353&prodName=2SA1163
2SA1163-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 26729 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 46
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2SA1312GRTE85LF 2SA1312_datasheet_en_20210625.pdf?did=19263&prodName=2SA1312
2SA1312GRTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1587-GR,LF docget.jsp?did=19172&prodName=2SA1587
2SA1587-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 20789 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
88+0.20 EUR
142+0.12 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 53
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2SA1954BTE85LF
2SA1954BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1955FVATPL3Z 2SA1955FV.pdf
2SA1955FVATPL3Z
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
auf Bestellung 2272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
80+0.22 EUR
115+0.15 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 53
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2SA1955FVBTPL3Z 2SA1955FV.pdf
2SA1955FVBTPL3Z
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: VESM
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
auf Bestellung 2695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
77+0.23 EUR
100+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 63
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2SC2712-OTE85LF 2SC2712_datasheet_en_20220203.pdf?did=19227&prodName=2SC2712
2SC2712-OTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 19233 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
100+0.18 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
Mindestbestellmenge: 59
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2SC2713-BL,LF 2SC2713.pdf
2SC2713-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 10666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
71+0.25 EUR
114+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
2SC2713-GR,LF 2SC2713.pdf
2SC2713-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 11720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
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2SC3324GRTE85LF 2SC3324.pdf
2SC3324GRTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC3325-Y,LF docget.jsp?did=19247&prodName=2SC3325
2SC3325-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 21439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
71+0.25 EUR
114+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 44
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2SC3326-B,LF docget.jsp?did=19249&prodName=2SC3326
2SC3326-B,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 198480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
53+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
2SC4116-BL,LF 2SC4116_datasheet_en_20210630.pdf?did=19292&prodName=2SC4116
2SC4116-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 2649 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
113+0.16 EUR
183+0.10 EUR
500+0.07 EUR
1000+0.06 EUR
Mindestbestellmenge: 72
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2SC4213BTE85LF 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213
2SC4213BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
auf Bestellung 7633 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
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2SC5084YTE85LF docget.jsp?did=17653&prodName=2SC5084
2SC5084YTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SC59
Produkt ist nicht verfügbar
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2SC5087YTE85LF
2SC5087YTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5232BTE85LF
2SC5232BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
72+0.24 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 63
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2SC5233BTE85LF
2SC5233BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC6026CTGRTPL3 docget.jsp?did=713&prodName=2SC6026CT
2SC6026CTGRTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
auf Bestellung 6389 Stücke:
Lieferzeit 10-14 Tag (e)
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2SJ168TE85LF 2SJ168_datasheet_en_20140301.pdf?did=19506&prodName=2SJ168
2SJ168TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
auf Bestellung 12610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
17+1.06 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.54 EUR
Mindestbestellmenge: 12
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2SJ305TE85LF 2SJ305_datasheet_en_20140301.pdf?did=19508&prodName=2SJ305
2SJ305TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
auf Bestellung 17089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.30 EUR
22+0.81 EUR
100+0.52 EUR
500+0.40 EUR
1000+0.36 EUR
Mindestbestellmenge: 14
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2SK1828TE85LF
2SK1828TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
auf Bestellung 1307 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
53+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
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