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1SS382TE85LF 1SS382TE85LF Toshiba Semiconductor and Storage 1SS382_datasheet_en_20210625.pdf?did=3358&prodName=1SS382 Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 14308 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
51+0.35 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 33
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1SS384TE85LF 1SS384TE85LF Toshiba Semiconductor and Storage 1SS384_datasheet_en_20180907.pdf?did=3362&prodName=1SS384 Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 10311 Stücke:
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36+0.49 EUR
57+0.31 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.15 EUR
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1SS394TE85LF 1SS394TE85LF Toshiba Semiconductor and Storage 1SS394_datasheet_en_20171030.pdf?did=3380&prodName=1SS394 Description: DIODE SCHOTTKY 10V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 5619 Stücke:
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50+0.35 EUR
77+0.23 EUR
104+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
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1SS397TE85LF 1SS397TE85LF Toshiba Semiconductor and Storage 1SS397_datasheet_en_20210625.pdf?did=3386&prodName=1SS397 Description: DIODE GEN PURP 400V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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1SS398TE85LF 1SS398TE85LF Toshiba Semiconductor and Storage 1SS398_datasheet_en_20210625.pdf?did=3389&prodName=1SS398 Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
auf Bestellung 5293 Stücke:
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25+0.7 EUR
39+0.46 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
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1SS399TE85LF 1SS399TE85LF Toshiba Semiconductor and Storage docget.jsp?did=3391&prodName=1SS399 Description: DIODE ARRAY GP 400V 100MA SC61B
Produkt ist nicht verfügbar
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1SS402TE85LF 1SS402TE85LF Toshiba Semiconductor and Storage 1SS402_datasheet_en_20140301.pdf?did=3395&prodName=1SS402 Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 14039 Stücke:
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36+0.49 EUR
56+0.32 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.16 EUR
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1SS404,H3F 1SS404,H3F Toshiba Semiconductor and Storage docget.jsp?did=3400&prodName=1SS404 Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 9503 Stücke:
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63+0.28 EUR
106+0.17 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.069 EUR
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2SA1163-GR,LF 2SA1163-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19353&prodName=2SA1163 Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 22292 Stücke:
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48+0.37 EUR
79+0.22 EUR
127+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
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2SA1587-GR,LF 2SA1587-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19172&prodName=2SA1587 Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 14300 Stücke:
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59+0.3 EUR
95+0.19 EUR
153+0.12 EUR
500+0.084 EUR
1000+0.074 EUR
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2SA1954BTE85LF 2SA1954BTE85LF Toshiba Semiconductor and Storage Description: TRANS PNP 12V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SA1955FVATPL3Z 2SA1955FVATPL3Z Toshiba Semiconductor and Storage 2SA1955FV.pdf Description: TRANS PNP 12V 0.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
auf Bestellung 2222 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
87+0.2 EUR
124+0.14 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.1 EUR
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2SA1955FVBTPL3Z 2SA1955FVBTPL3Z Toshiba Semiconductor and Storage 2SA1955FV.pdf Description: TRANS PNP 12V 0.4A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: VESM
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
auf Bestellung 2690 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
83+0.21 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 67
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2SC2712-OTE85LF 2SC2712-OTE85LF Toshiba Semiconductor and Storage 2SC2712_datasheet_en_20220203.pdf?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 13879 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
104+0.17 EUR
168+0.11 EUR
500+0.077 EUR
1000+0.067 EUR
Mindestbestellmenge: 67
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2SC2713-BL,LF 2SC2713-BL,LF Toshiba Semiconductor and Storage 2SC2713.pdf Description: TRANS NPN 120V 0.1A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 10666 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
71+0.25 EUR
114+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
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2SC2713-GR,LF 2SC2713-GR,LF Toshiba Semiconductor and Storage 2SC2713.pdf Description: TRANS NPN 120V 0.1A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 11720 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
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2SC3325-Y,LF 2SC3325-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19247&prodName=2SC3325 Description: TRANS NPN 50V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 23248 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
74+0.24 EUR
119+0.15 EUR
500+0.11 EUR
1000+0.096 EUR
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2SC3326-B,LF 2SC3326-B,LF Toshiba Semiconductor and Storage docget.jsp?did=19249&prodName=2SC3326 Description: TRANS NPN 20V 0.3A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 107494 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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2SC4116-BL,LF 2SC4116-BL,LF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 2537 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
122+0.14 EUR
197+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
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2SC4213BTE85LF 2SC4213BTE85LF Toshiba Semiconductor and Storage 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213 Description: TRANS NPN 20V 0.3A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
auf Bestellung 7633 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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2SC5084YTE85LF 2SC5084YTE85LF Toshiba Semiconductor and Storage docget.jsp?did=17653&prodName=2SC5084 Description: RF TRANS NPN 12V 7GHZ SC59
Produkt ist nicht verfügbar
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2SC5087YTE85LF 2SC5087YTE85LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5232BTE85LF 2SC5232BTE85LF Toshiba Semiconductor and Storage Description: TRANS NPN 12V 0.5A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
72+0.24 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
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2SC5233BTE85LF 2SC5233BTE85LF Toshiba Semiconductor and Storage Description: TRANS NPN 12V 0.5A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC6026CTGRTPL3 2SC6026CTGRTPL3 Toshiba Semiconductor and Storage docget.jsp?did=713&prodName=2SC6026CT Description: TRANS NPN 50V 0.1A CST3
auf Bestellung 6389 Stücke:
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2SJ168TE85LF 2SJ168TE85LF Toshiba Semiconductor and Storage 2SJ168_datasheet_en_20140301.pdf?did=19506&prodName=2SJ168 Description: MOSFET P-CH 60V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
auf Bestellung 11270 Stücke:
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10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
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2SJ305TE85LF 2SJ305TE85LF Toshiba Semiconductor and Storage 2SJ305_datasheet_en_20140301.pdf?did=19508&prodName=2SJ305 Description: MOSFET P-CH 30V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
auf Bestellung 17089 Stücke:
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2SK1828TE85LF 2SK1828TE85LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 50MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
auf Bestellung 1307 Stücke:
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2SK1829TE85LF 2SK1829TE85LF Toshiba Semiconductor and Storage 2SK1829_datasheet_en_20140301.pdf?did=19538&prodName=2SK1829 Description: MOSFET N-CH 20V 50MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK2009TE85LF 2SK2009TE85LF Toshiba Semiconductor and Storage 2SK2009_datasheet_en_20140301.pdf?did=19542&prodName=2SK2009 Description: MOSFET N-CH 30V 200MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
auf Bestellung 3023 Stücke:
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2SK2034TE85LF 2SK2034TE85LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK3079ATE12LQ 2SK3079ATE12LQ Toshiba Semiconductor and Storage docget.jsp?did=17923&prodName=2SK3079A Description: MOSF RF N CH 10V PW-X
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2SK3475TE12LF 2SK3475TE12LF Toshiba Semiconductor and Storage docget.jsp?did=17925&prodName=2SK3475 Description: MOSF RF N CH 20V 1A PW-MINI
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2SK880GRTE85LF 2SK880GRTE85LF Toshiba Semiconductor and Storage 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880 Description: JFET N-CH 50V SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
auf Bestellung 5411 Stücke:
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500+0.4 EUR
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DF2S6.2FS,L3M DF2S6.2FS,L3M Toshiba Semiconductor and Storage DF2S6.2FS_datasheet_en_20211216.pdf?did=22218&prodName=DF2S6.2FS Description: TVS DIODE 5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 43771 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
152+0.12 EUR
337+0.052 EUR
500+0.049 EUR
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2000+0.044 EUR
5000+0.042 EUR
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DF3A6.2FUTE85LF DF3A6.2FUTE85LF Toshiba Semiconductor and Storage DF3A6.2FU_datasheet_en_20140301.pdf?did=22225&prodName=DF3A6.2FU Description: TVS DIODE 3VWM USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
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65+0.27 EUR
104+0.17 EUR
500+0.13 EUR
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DF5A5.6CFUTE85LF DF5A5.6CFUTE85LF Toshiba Semiconductor and Storage DF5A5.6CFU_datasheet_en_20140301.pdf?did=350&prodName=DF5A5.6CFU Description: TVS DIODE 3.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 2810 Stücke:
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29+0.62 EUR
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DF5A5.6FTE85LF DF5A5.6FTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A5.6F Description: TVS DIODE 2.5VWM SMV
auf Bestellung 6954 Stücke:
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DF5A5.6FUTE85LF DF5A5.6FUTE85LF Toshiba Semiconductor and Storage DF5A5.6FU_datasheet_en_20140301.pdf?did=22252&prodName=DF5A5.6FU Description: TVS DIODE 2.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 11607 Stücke:
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53+0.33 EUR
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DF5A6.2LFUTE85LF DF5A6.2LFUTE85LF Toshiba Semiconductor and Storage DF5A6.2LFU_datasheet_en_20140301.pdf?did=22261&prodName=DF5A6.2LFU Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
Part Status: Active
auf Bestellung 1313 Stücke:
Lieferzeit 10-14 Tag (e)
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DF5A6.8FUTE85LF DF5A6.8FUTE85LF Toshiba Semiconductor and Storage DF5A6.8FU_datasheet_en_20140301.pdf?did=3419&prodName=DF5A6.8FU Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 6531 Stücke:
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DF5A6.8LFUTE85LF DF5A6.8LFUTE85LF Toshiba Semiconductor and Storage DF5A6.8LFU_datasheet_en_20140301.pdf?did=3424&prodName=DF5A6.8LFU Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 5-SSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 26136 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
61+0.29 EUR
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HN1B01FU-GR,LF HN1B01FU-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19148&prodName=HN1B01FU Description: TRANS NPN/PNP 50V 0.15A US6-PLN
auf Bestellung 2982 Stücke:
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32+0.56 EUR
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HN1C01FU-GR,LF HN1C01FU-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19152&prodName=HN1C01FU Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2878 Stücke:
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44+0.4 EUR
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116+0.15 EUR
500+0.11 EUR
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HN1C01FYTE85LF HN1C01FYTE85LF Toshiba Semiconductor and Storage docget.jsp?did=19165&prodName=HN1C01F Description: TRANS 2NPN 50V 0.15A SM6
auf Bestellung 2801 Stücke:
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HN1D03FTE85LF HN1D03FTE85LF Toshiba Semiconductor and Storage HN1D03F_datasheet_en_20210625.pdf?did=3639&prodName=HN1D03F Description: DIODE ARRAY GP 80V 100MA SC-74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair CA + CC
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-74
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 23738 Stücke:
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38+0.48 EUR
57+0.31 EUR
100+0.18 EUR
500+0.16 EUR
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HN1D04FUTE85LF HN1D04FUTE85LF Toshiba Semiconductor and Storage HN1D04FU_datasheet_en_20140301.pdf?did=21822&prodName=HN1D04FU Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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HN2C01FEYTE85LF HN2C01FEYTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN2C01FE Description: TRANS 2NPN 50V 0.15A ES6
auf Bestellung 3930 Stücke:
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HN2D01FTE85LF HN2D01FTE85LF Toshiba Semiconductor and Storage HN2D01F_datasheet_en_20210625.pdf?did=3462&prodName=HN2D01F Description: DIODE ARRAY GP 80V 80MA SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SC-74
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 5811 Stücke:
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25+0.72 EUR
34+0.52 EUR
100+0.26 EUR
500+0.23 EUR
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HN2S01FUTE85LF HN2S01FUTE85LF Toshiba Semiconductor and Storage HN2S01FU_datasheet_en_20140301.pdf?did=3705&prodName=HN2S01FU Description: DIODE ARR SCHOTT 10V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 12445 Stücke:
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38+0.48 EUR
55+0.32 EUR
100+0.21 EUR
500+0.17 EUR
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HN2S03FUTE85LF HN2S03FUTE85LF Toshiba Semiconductor and Storage HN2S03FU_datasheet_en_20140301.pdf?did=21837&prodName=HN2S03FU Description: DIODE ARRAY SCHOTT 20V 50MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Produkt ist nicht verfügbar
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HN3C10FUTE85LF HN3C10FUTE85LF Toshiba Semiconductor and Storage Description: RF TRANS 2 NPN 12V 7GHZ US6
auf Bestellung 101 Stücke:
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20+0.9 EUR
23+0.77 EUR
100+0.58 EUR
Mindestbestellmenge: 20
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HN4A51JTE85LF HN4A51JTE85LF Toshiba Semiconductor and Storage HN4A51J_datasheet_en_20140301.pdf?did=22329&prodName=HN4A51J Description: TRANS 2PNP DUAL 120V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
auf Bestellung 7492 Stücke:
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19+0.95 EUR
30+0.59 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
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HN4K03JUTE85LF HN4K03JUTE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=HN4K03JU Description: MOSFET N-CH 20V 0.1A USV
Produkt ist nicht verfügbar
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JDH2S01FSTPL3 JDH2S01FSTPL3 Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=JDH2S01FS Description: DIODE SCHOTTKY 4V 25MA FSC
auf Bestellung 7995 Stücke:
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JDH2S02FSTPL3 JDH2S02FSTPL3 Toshiba Semiconductor and Storage JDH2S02FS_datasheet_en_20170803.pdf?did=6616&prodName=JDH2S02FS Description: RF DIODE SCHOTTKY 10V FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 10V
Supplier Device Package: fSC
Part Status: Not For New Designs
Current - Max: 10 mA
auf Bestellung 15 Stücke:
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JDH3D01STE85LF JDH3D01STE85LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=JDH3D01S Description: DIODE SCHOTTKY 4V 25MA SSM
auf Bestellung 2064 Stücke:
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JDV2S07FSTPL3 JDV2S07FSTPL3 Toshiba Semiconductor and Storage Description: DIODE VARICAP VCO 10V FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 10V
Capacitance Ratio Condition: C1/C4
Supplier Device Package: fSC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.3
Produkt ist nicht verfügbar
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JDV2S09FSTPL3 JDV2S09FSTPL3 Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=JDV2S09FS Description: DIODE STANDARD 10V FSC
auf Bestellung 2750 Stücke:
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RN1412TE85LF RN1412TE85LF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
70+0.25 EUR
112+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
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1SS382TE85LF 1SS382_datasheet_en_20210625.pdf?did=3358&prodName=1SS382
1SS382TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 14308 Stücke:
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33+0.55 EUR
51+0.35 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.17 EUR
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1SS384TE85LF 1SS384_datasheet_en_20180907.pdf?did=3362&prodName=1SS384
1SS384TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 10311 Stücke:
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Anzahl Preis
36+0.49 EUR
57+0.31 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.15 EUR
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1SS394TE85LF 1SS394_datasheet_en_20171030.pdf?did=3380&prodName=1SS394
1SS394TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 5619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
77+0.23 EUR
104+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 50
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1SS397TE85LF 1SS397_datasheet_en_20210625.pdf?did=3386&prodName=1SS397
1SS397TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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1SS398TE85LF 1SS398_datasheet_en_20210625.pdf?did=3389&prodName=1SS398
1SS398TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
auf Bestellung 5293 Stücke:
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Anzahl Preis
25+0.7 EUR
39+0.46 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
Mindestbestellmenge: 25
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1SS399TE85LF docget.jsp?did=3391&prodName=1SS399
1SS399TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA SC61B
Produkt ist nicht verfügbar
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1SS402TE85LF 1SS402_datasheet_en_20140301.pdf?did=3395&prodName=1SS402
1SS402TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 14039 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
56+0.32 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.16 EUR
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1SS404,H3F docget.jsp?did=3400&prodName=1SS404
1SS404,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 9503 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
106+0.17 EUR
161+0.11 EUR
500+0.08 EUR
1000+0.069 EUR
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2SA1163-GR,LF docget.jsp?did=19353&prodName=2SA1163
2SA1163-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 22292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.22 EUR
127+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 48
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2SA1587-GR,LF docget.jsp?did=19172&prodName=2SA1587
2SA1587-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 14300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
95+0.19 EUR
153+0.12 EUR
500+0.084 EUR
1000+0.074 EUR
Mindestbestellmenge: 59
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2SA1954BTE85LF
2SA1954BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SA1955FVATPL3Z 2SA1955FV.pdf
2SA1955FVATPL3Z
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: CST3
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
auf Bestellung 2222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
87+0.2 EUR
124+0.14 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 56
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2SA1955FVBTPL3Z 2SA1955FV.pdf
2SA1955FVBTPL3Z
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: VESM
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
auf Bestellung 2690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
83+0.21 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 67
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2SC2712-OTE85LF 2SC2712_datasheet_en_20220203.pdf?did=19227&prodName=2SC2712
2SC2712-OTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 13879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
104+0.17 EUR
168+0.11 EUR
500+0.077 EUR
1000+0.067 EUR
Mindestbestellmenge: 67
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2SC2713-BL,LF 2SC2713.pdf
2SC2713-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 10666 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
71+0.25 EUR
114+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
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2SC2713-GR,LF 2SC2713.pdf
2SC2713-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 11720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 44
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2SC3325-Y,LF docget.jsp?did=19247&prodName=2SC3325
2SC3325-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.5A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 23248 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
74+0.24 EUR
119+0.15 EUR
500+0.11 EUR
1000+0.096 EUR
Mindestbestellmenge: 46
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2SC3326-B,LF docget.jsp?did=19249&prodName=2SC3326
2SC3326-B,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 150 mW
auf Bestellung 107494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
56+0.32 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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2SC4116-BL,LF docget.jsp?did=19292&prodName=2SC4116
2SC4116-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 2537 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
122+0.14 EUR
197+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
Mindestbestellmenge: 72
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2SC4213BTE85LF 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213
2SC4213BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 100 mW
auf Bestellung 7633 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
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2SC5084YTE85LF docget.jsp?did=17653&prodName=2SC5084
2SC5084YTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SC59
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5087YTE85LF
2SC5087YTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SC5232BTE85LF
2SC5232BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
72+0.24 EUR
100+0.21 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 63
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2SC5233BTE85LF
2SC5233BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC6026CTGRTPL3 docget.jsp?did=713&prodName=2SC6026CT
2SC6026CTGRTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
auf Bestellung 6389 Stücke:
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2SJ168TE85LF 2SJ168_datasheet_en_20140301.pdf?did=19506&prodName=2SJ168
2SJ168TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
auf Bestellung 11270 Stücke:
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10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.55 EUR
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2SJ305TE85LF 2SJ305_datasheet_en_20140301.pdf?did=19508&prodName=2SJ305
2SJ305TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
auf Bestellung 17089 Stücke:
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14+1.3 EUR
22+0.81 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
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2SK1828TE85LF
2SK1828TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
auf Bestellung 1307 Stücke:
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32+0.56 EUR
53+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
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2SK1829TE85LF 2SK1829_datasheet_en_20140301.pdf?did=19538&prodName=2SK1829
2SK1829TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK2009TE85LF 2SK2009_datasheet_en_20140301.pdf?did=19542&prodName=2SK2009
2SK2009TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 200MA SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
auf Bestellung 3023 Stücke:
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17+1.07 EUR
24+0.74 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.34 EUR
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2SK2034TE85LF
2SK2034TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK3079ATE12LQ docget.jsp?did=17923&prodName=2SK3079A
2SK3079ATE12LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 10V PW-X
Produkt ist nicht verfügbar
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2SK3475TE12LF docget.jsp?did=17925&prodName=2SK3475
2SK3475TE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 20V 1A PW-MINI
Produkt ist nicht verfügbar
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2SK880GRTE85LF 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880
2SK880GRTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
auf Bestellung 5411 Stücke:
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Anzahl Preis
16+1.13 EUR
25+0.73 EUR
100+0.49 EUR
500+0.4 EUR
1000+0.36 EUR
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DF2S6.2FS,L3M DF2S6.2FS_datasheet_en_20211216.pdf?did=22218&prodName=DF2S6.2FS
DF2S6.2FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 43771 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
152+0.12 EUR
337+0.052 EUR
500+0.049 EUR
1000+0.046 EUR
2000+0.044 EUR
5000+0.042 EUR
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DF3A6.2FUTE85LF DF3A6.2FU_datasheet_en_20140301.pdf?did=22225&prodName=DF3A6.2FU
DF3A6.2FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
65+0.27 EUR
104+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
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DF5A5.6CFUTE85LF DF5A5.6CFU_datasheet_en_20140301.pdf?did=350&prodName=DF5A5.6CFU
DF5A5.6CFUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 2810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
47+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
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DF5A5.6FTE85LF docget.jsp?type=datasheet&lang=en&pid=DF5A5.6F
DF5A5.6FTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM SMV
auf Bestellung 6954 Stücke:
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DF5A5.6FUTE85LF DF5A5.6FU_datasheet_en_20140301.pdf?did=22252&prodName=DF5A5.6FU
DF5A5.6FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 11607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
53+0.33 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
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DF5A6.2LFUTE85LF DF5A6.2LFU_datasheet_en_20140301.pdf?did=22261&prodName=DF5A6.2LFU
DF5A6.2LFUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
Part Status: Active
auf Bestellung 1313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
61+0.29 EUR
119+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
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DF5A6.8FUTE85LF DF5A6.8FU_datasheet_en_20140301.pdf?did=3419&prodName=DF5A6.8FU
DF5A6.8FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 6531 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
66+0.27 EUR
129+0.14 EUR
500+0.13 EUR
1000+0.12 EUR
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DF5A6.8LFUTE85LF DF5A6.8LFU_datasheet_en_20140301.pdf?did=3424&prodName=DF5A6.8LFU
DF5A6.8LFUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 5-SSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.5V
Power Line Protection: No
auf Bestellung 26136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
61+0.29 EUR
119+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
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HN1B01FU-GR,LF docget.jsp?did=19148&prodName=HN1B01FU
HN1B01FU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6-PLN
auf Bestellung 2982 Stücke:
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32+0.56 EUR
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HN1C01FU-GR,LF docget.jsp?did=19152&prodName=HN1C01FU
HN1C01FU-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
73+0.24 EUR
116+0.15 EUR
500+0.11 EUR
1000+0.099 EUR
Mindestbestellmenge: 44
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HN1C01FYTE85LF docget.jsp?did=19165&prodName=HN1C01F
HN1C01FYTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SM6
auf Bestellung 2801 Stücke:
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HN1D03FTE85LF HN1D03F_datasheet_en_20210625.pdf?did=3639&prodName=HN1D03F
HN1D03FTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair CA + CC
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-74
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 23738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
57+0.31 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 38
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HN1D04FUTE85LF HN1D04FU_datasheet_en_20140301.pdf?did=21822&prodName=HN1D04FU
HN1D04FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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HN2C01FEYTE85LF docget.jsp?type=datasheet&lang=en&pid=HN2C01FE
HN2C01FEYTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
auf Bestellung 3930 Stücke:
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HN2D01FTE85LF HN2D01F_datasheet_en_20210625.pdf?did=3462&prodName=HN2D01F
HN2D01FTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SC-74
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 5811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
34+0.52 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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HN2S01FUTE85LF HN2S01FU_datasheet_en_20140301.pdf?did=3705&prodName=HN2S01FU
HN2S01FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 10V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 12445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
55+0.32 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 38
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HN2S03FUTE85LF HN2S03FU_datasheet_en_20140301.pdf?did=21837&prodName=HN2S03FU
HN2S03FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
Produkt ist nicht verfügbar
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HN3C10FUTE85LF
HN3C10FUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS 2 NPN 12V 7GHZ US6
auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
23+0.77 EUR
100+0.58 EUR
Mindestbestellmenge: 20
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HN4A51JTE85LF HN4A51J_datasheet_en_20140301.pdf?did=22329&prodName=HN4A51J
HN4A51JTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 120V 100MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SMV
auf Bestellung 7492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
30+0.59 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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HN4K03JUTE85LF docget.jsp?type=datasheet&lang=en&pid=HN4K03JU
HN4K03JUTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 0.1A USV
Produkt ist nicht verfügbar
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JDH2S01FSTPL3 docget.jsp?type=datasheet&lang=en&pid=JDH2S01FS
JDH2S01FSTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 4V 25MA FSC
auf Bestellung 7995 Stücke:
Lieferzeit 10-14 Tag (e)
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JDH2S02FSTPL3 JDH2S02FS_datasheet_en_20170803.pdf?did=6616&prodName=JDH2S02FS
JDH2S02FSTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE SCHOTTKY 10V FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Diode Type: Schottky - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 10V
Supplier Device Package: fSC
Part Status: Not For New Designs
Current - Max: 10 mA
auf Bestellung 15 Stücke:
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JDH3D01STE85LF docget.jsp?type=datasheet&lang=en&pid=JDH3D01S
JDH3D01STE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 4V 25MA SSM
auf Bestellung 2064 Stücke:
Lieferzeit 10-14 Tag (e)
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JDV2S07FSTPL3
JDV2S07FSTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARICAP VCO 10V FSC
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 4.9pF @ 1V, 1MHz
Voltage - Peak Reverse (Max): 10V
Capacitance Ratio Condition: C1/C4
Supplier Device Package: fSC
Part Status: Active
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 2.3
Produkt ist nicht verfügbar
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JDV2S09FSTPL3 docget.jsp?type=datasheet&lang=en&pid=JDV2S09FS
JDV2S09FSTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 10V FSC
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1412TE85LF
RN1412TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
70+0.25 EUR
112+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
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