Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13011) > Seite 49 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SK3756(TE12L,F) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH PW-MINI |
Produkt ist nicht verfügbar |
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2SK4037(TE12L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH PW-X |
auf Bestellung 404 Stücke: Lieferzeit 21-28 Tag (e) |
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2SK880-BL(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Supplier Device Package: SC-70 Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V |
auf Bestellung 8451 Stücke: Lieferzeit 21-28 Tag (e) |
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2SK880-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Supplier Device Package: USM Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
auf Bestellung 42834 Stücke: Lieferzeit 21-28 Tag (e) |
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3SK291(TE85L,F) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH SMQ Packaging: Cut Tape (CT) Package / Case: SC-61AA Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Dual Gate Gain: 22.5dB Technology: MOSFET Noise Figure: 2.5dB Supplier Device Package: SMQ Voltage - Rated: 12.5 V Voltage - Test: 6 V Current - Test: 10 mA |
Produkt ist nicht verfügbar |
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3SK293(TE85L,F) | Toshiba Semiconductor and Storage |
Description: RF MOSFET 6V USQ Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Current Rating (Amps): 30mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: N-Channel Dual Gate Gain: 22dB Technology: MOSFET (Metal Oxide) Noise Figure: 2.5dB Supplier Device Package: USQ Part Status: Not For New Designs Voltage - Rated: 12.5 V Voltage - Test: 6 V Current - Test: 10 mA |
auf Bestellung 26395 Stücke: Lieferzeit 21-28 Tag (e) |
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CUS521,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 30V 200MA USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 26pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 30 V |
auf Bestellung 6150 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S12FU,H3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 9VWM USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: USC Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Power Line Protection: No |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S6.8MFS,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM 15VC FSC |
auf Bestellung 4527 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S6.8UFS,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 19VWM 22VC |
auf Bestellung 1341 Stücke: Lieferzeit 21-28 Tag (e) |
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DF3A5.6CT(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 2.5VWM CST3 |
auf Bestellung 1616 Stücke: Lieferzeit 21-28 Tag (e) |
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DF3A5.6LFU(TE85L,F | Toshiba Semiconductor and Storage | Description: TVS DIODE 3.5VWM USM |
Produkt ist nicht verfügbar |
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DF3A6.2CT(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 3VWM CST3 |
auf Bestellung 2975 Stücke: Lieferzeit 21-28 Tag (e) |
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DF3A6.2F(TE85L,F) | Toshiba Semiconductor and Storage | Description: TVS DIODE 3VWM SMINI |
auf Bestellung 4210 Stücke: Lieferzeit 21-28 Tag (e) |
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DF3A6.2LFU(TE85L,F | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM USM |
auf Bestellung 401 Stücke: Lieferzeit 21-28 Tag (e) |
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DF3A6.8CT(TPL3) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM DST3 |
auf Bestellung 2875 Stücke: Lieferzeit 21-28 Tag (e) |
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DF3A6.8LFV,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM VESM |
auf Bestellung 65087 Stücke: Lieferzeit 21-28 Tag (e) |
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DF3D6.8MFV(TL3,T) | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM 15VC VESM |
Produkt ist nicht verfügbar |
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DF5A5.6CJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 29pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V Supplier Device Package: ESV Unidirectional Channels: 4 Voltage - Breakdown (Min): 5.3V Power Line Protection: No Part Status: Active |
auf Bestellung 70352 Stücke: Lieferzeit 21-28 Tag (e) |
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DF5A6.8LF,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM SMV |
auf Bestellung 870 Stücke: Lieferzeit 21-28 Tag (e) |
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DF5A6.8LJE,LM(T | Toshiba Semiconductor and Storage | Description: TVS DIODE 5VWM ESV |
auf Bestellung 2333 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1A01FU-Y(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANSISTOR PNP US6-PLN |
auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1B04FU-GR,LF | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP 50V 0.15A US6 |
Produkt ist nicht verfügbar |
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HN1C01F-GR(TE85L,F | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 50V 0.15A SM6 |
auf Bestellung 178 Stücke: Lieferzeit 21-28 Tag (e) |
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HN1D01FU,LF(T | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 2 Pair Common Anode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: US6 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 117 Stücke: Lieferzeit 21-28 Tag (e) |
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HN2A01FU-GR(TE85LF | Toshiba Semiconductor and Storage | Description: TRANS 2PNP 50V 0.15A US6-PLN |
Produkt ist nicht verfügbar |
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HN2D01JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA ESV Packaging: Cut Tape (CT) Package / Case: SOT-553 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.6 ns Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: ESV Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 3672 Stücke: Lieferzeit 21-28 Tag (e) |
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HN2D02FU(TE85L,F) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY GP 80V 80MA US6 |
Produkt ist nicht verfügbar |
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HN2D03F(TE85L,F) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY GP 400V 100MA SM6 |
auf Bestellung 2983 Stücke: Lieferzeit 21-28 Tag (e) |
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HN2S02JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY SCHOTTKY 40V ESV |
auf Bestellung 3284 Stücke: Lieferzeit 21-28 Tag (e) |
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HN2S03FE(TE85L,F) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY SCHOTTKY 20V ES6 |
auf Bestellung 3198 Stücke: Lieferzeit 21-28 Tag (e) |
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HN2S03T(TE85L) | Toshiba Semiconductor and Storage | Description: DIODE ARRAY SCHOTTKY 20V TESQ |
auf Bestellung 3805 Stücke: Lieferzeit 21-28 Tag (e) |
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HN4A06J(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2PNP 120V 0.1A SMV |
Produkt ist nicht verfügbar |
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HN4B01JE(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS NPN/PNP 50V 0.15A ESV PLN |
auf Bestellung 4060 Stücke: Lieferzeit 21-28 Tag (e) |
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HN4B04J(TE85L,F) | Toshiba Semiconductor and Storage |
Description: TRANS NPN/PNP 30V 0.5A SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Transistor Type: NPN, PNP Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: SMV Part Status: Obsolete |
Produkt ist nicht verfügbar |
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HN4C51J(TE85L,F) | Toshiba Semiconductor and Storage | Description: TRANS 2NPN 120V 0.1A SMV |
auf Bestellung 11176 Stücke: Lieferzeit 21-28 Tag (e) |
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JDP2S02ACT(TPL3) | Toshiba Semiconductor and Storage |
Description: RF DIODE PIN 30V CST2 Packaging: Cut Tape (CT) Package / Case: SOD-882 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 30V Supplier Device Package: CST2 Part Status: Active Current - Max: 50 mA |
auf Bestellung 2720 Stücke: Lieferzeit 21-28 Tag (e) |
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JDP2S02AFS(TPL3) | Toshiba Semiconductor and Storage | Description: RF DIODE PIN 30V FSC |
auf Bestellung 12924 Stücke: Lieferzeit 21-28 Tag (e) |
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JDP2S08SC(TPL3) | Toshiba Semiconductor and Storage | Description: RF DIODE PIN 30V SC2 |
auf Bestellung 12815 Stücke: Lieferzeit 21-28 Tag (e) |
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JDP2S12CR(TE85L,Q | Toshiba Semiconductor and Storage | Description: RF DIODE PIN 180V S-FLAT |
Produkt ist nicht verfügbar |
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JDV2S10FS(TPL3) | Toshiba Semiconductor and Storage | Description: RF DIODE STANDARD 10V FSC |
auf Bestellung 418 Stücke: Lieferzeit 21-28 Tag (e) |
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JDV2S41FS(TPL3) | Toshiba Semiconductor and Storage | Description: RF DIODE STANDARD 15V FSC |
auf Bestellung 37306 Stücke: Lieferzeit 21-28 Tag (e) |
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MT3S20TU(TE85L) | Toshiba Semiconductor and Storage | Description: TRANS RF NPN 7GHZ 80MA UFM |
auf Bestellung 4208 Stücke: Lieferzeit 21-28 Tag (e) |
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RFM00U7U(TE85L,F) | Toshiba Semiconductor and Storage | Description: FET RF N-CH 20V 520MHZ USQ |
Produkt ist nicht verfügbar |
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RFM01U7P(TE12L,F) | Toshiba Semiconductor and Storage |
Description: RF MOSFET 7.2V PW-MINI Packaging: Cut Tape (CT) Package / Case: TO-243AA Current Rating (Amps): 1A Mounting Type: Surface Mount Frequency: 520MHz Configuration: N-Channel Power - Output: 1.2W Gain: 10.8dB Technology: MOSFET (Metal Oxide) Supplier Device Package: PW-MINI Part Status: Not For New Designs Voltage - Rated: 20 V Voltage - Test: 7.2 V Current - Test: 100 mA |
Produkt ist nicht verfügbar |
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RFM03U3CT(TE12L) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH RF-CST3 |
auf Bestellung 1040 Stücke: Lieferzeit 21-28 Tag (e) |
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RFM04U6P(TE12L,F) | Toshiba Semiconductor and Storage |
Description: RF MOSFET 6V PW-MINI Packaging: Cut Tape (CT) Package / Case: TO-243AA Current Rating (Amps): 2A Mounting Type: Surface Mount Frequency: 470MHz Configuration: N-Channel Power - Output: 4.3W Gain: 13.3dB Technology: MOSFET Supplier Device Package: PW-MINI Voltage - Rated: 16 V Voltage - Test: 6 V Current - Test: 500 mA |
Produkt ist nicht verfügbar |
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RFM08U9X(TE12L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH PW-X |
Produkt ist nicht verfügbar |
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RFM12U7X(TE12L,Q) | Toshiba Semiconductor and Storage | Description: MOSFET N-CH PW-X |
Produkt ist nicht verfügbar |
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RN1102MFV(TL3,T) | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN VESM |
auf Bestellung 6679 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1103,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
auf Bestellung 2999 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1104MFV,L3F | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.15W VESM |
auf Bestellung 7870 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1105MFV,L3F | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.15W VESM |
auf Bestellung 9366 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1105(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANSISTOR NPN SSM |
auf Bestellung 1169 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1106MFV(TL3,T) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESM Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
Produkt ist nicht verfügbar |
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RN1108(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
auf Bestellung 2198 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1109(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
Produkt ist nicht verfügbar |
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RN1112(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
Produkt ist nicht verfügbar |
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RN1113(T5L,F,T) | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Supplier Device Package: SSM Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RN1114(T5L,F,T) | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 50V 0.1A SSM |
auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) |
2SK3756(TE12L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PW-MINI
Description: MOSFET N-CH PW-MINI
Produkt ist nicht verfügbar
2SK4037(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PW-X
Description: MOSFET N-CH PW-X
auf Bestellung 404 Stücke:
Lieferzeit 21-28 Tag (e)2SK880-BL(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
Description: JFET N-CH 50V SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
auf Bestellung 8451 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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20+ | 1.35 EUR |
23+ | 1.15 EUR |
100+ | 0.8 EUR |
500+ | 0.62 EUR |
1000+ | 0.51 EUR |
2SK880-Y(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 50V USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: USM
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 42834 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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18+ | 1.46 EUR |
21+ | 1.25 EUR |
100+ | 0.93 EUR |
500+ | 0.73 EUR |
3SK291(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22.5dB
Technology: MOSFET
Noise Figure: 2.5dB
Supplier Device Package: SMQ
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Description: MOSFET N-CH SMQ
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22.5dB
Technology: MOSFET
Noise Figure: 2.5dB
Supplier Device Package: SMQ
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
3SK293(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: USQ
Part Status: Not For New Designs
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
Description: RF MOSFET 6V USQ
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel Dual Gate
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.5dB
Supplier Device Package: USQ
Part Status: Not For New Designs
Voltage - Rated: 12.5 V
Voltage - Test: 6 V
Current - Test: 10 mA
auf Bestellung 26395 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
28+ | 0.95 EUR |
100+ | 0.66 EUR |
500+ | 0.51 EUR |
1000+ | 0.42 EUR |
CUS521,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
Description: DIODE SCHOTTKY 30V 200MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 6150 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.47 EUR |
79+ | 0.33 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.093 EUR |
DF2S12FU,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Power Line Protection: No
Description: TVS DIODE 9VWM USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: USC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.42 EUR |
87+ | 0.3 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.087 EUR |
DF2S6.8MFS,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 15VC FSC
Description: TVS DIODE 5VWM 15VC FSC
auf Bestellung 4527 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.2 EUR |
27+ | 0.97 EUR |
100+ | 0.66 EUR |
500+ | 0.5 EUR |
1000+ | 0.37 EUR |
2000+ | 0.34 EUR |
DF2S6.8UFS,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
Description: TVS DIODE 19VWM 22VC
auf Bestellung 1341 Stücke:
Lieferzeit 21-28 Tag (e)DF3A5.6CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM CST3
Description: TVS DIODE 2.5VWM CST3
auf Bestellung 1616 Stücke:
Lieferzeit 21-28 Tag (e)DF3A5.6LFU(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USM
Description: TVS DIODE 3.5VWM USM
Produkt ist nicht verfügbar
DF3A6.2CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM CST3
Description: TVS DIODE 3VWM CST3
auf Bestellung 2975 Stücke:
Lieferzeit 21-28 Tag (e)DF3A6.2F(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMINI
Description: TVS DIODE 3VWM SMINI
auf Bestellung 4210 Stücke:
Lieferzeit 21-28 Tag (e)DF3A6.2LFU(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USM
Description: TVS DIODE 5VWM USM
auf Bestellung 401 Stücke:
Lieferzeit 21-28 Tag (e)DF3A6.8CT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM DST3
Description: TVS DIODE 5VWM DST3
auf Bestellung 2875 Stücke:
Lieferzeit 21-28 Tag (e)DF3A6.8LFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM VESM
Description: TVS DIODE 5VWM VESM
auf Bestellung 65087 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.68 EUR |
47+ | 0.56 EUR |
100+ | 0.3 EUR |
500+ | 0.19 EUR |
1000+ | 0.13 EUR |
2000+ | 0.12 EUR |
DF3D6.8MFV(TL3,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 15VC VESM
Description: TVS DIODE 5VWM 15VC VESM
Produkt ist nicht verfügbar
DF5A5.6CJE,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 29pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 70352 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
39+ | 0.68 EUR |
100+ | 0.36 EUR |
500+ | 0.24 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
DF5A6.8LF,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Description: TVS DIODE 5VWM SMV
auf Bestellung 870 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.91 EUR |
39+ | 0.67 EUR |
100+ | 0.38 EUR |
500+ | 0.25 EUR |
DF5A6.8LJE,LM(T |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Description: TVS DIODE 5VWM ESV
auf Bestellung 2333 Stücke:
Lieferzeit 21-28 Tag (e)HN1A01FU-Y(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR PNP US6-PLN
Description: TRANSISTOR PNP US6-PLN
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)HN1B04FU-GR,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A US6
Description: TRANS NPN/PNP 50V 0.15A US6
Produkt ist nicht verfügbar
HN1C01F-GR(TE85L,F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A SM6
Description: TRANS 2NPN 50V 0.15A SM6
auf Bestellung 178 Stücke:
Lieferzeit 21-28 Tag (e)HN1D01FU,LF(T |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: US6
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 117 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
35+ | 0.76 EUR |
100+ | 0.38 EUR |
HN2A01FU-GR(TE85LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A US6-PLN
Description: TRANS 2PNP 50V 0.15A US6-PLN
Produkt ist nicht verfügbar
HN2D01JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ESV
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: ESV
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3672 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.96 EUR |
39+ | 0.68 EUR |
100+ | 0.34 EUR |
500+ | 0.3 EUR |
1000+ | 0.24 EUR |
2000+ | 0.21 EUR |
HN2D02FU(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA US6
Description: DIODE ARRAY GP 80V 80MA US6
Produkt ist nicht verfügbar
HN2D03F(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA SM6
Description: DIODE ARRAY GP 400V 100MA SM6
auf Bestellung 2983 Stücke:
Lieferzeit 21-28 Tag (e)HN2S02JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 40V ESV
Description: DIODE ARRAY SCHOTTKY 40V ESV
auf Bestellung 3284 Stücke:
Lieferzeit 21-28 Tag (e)HN2S03FE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 20V ES6
Description: DIODE ARRAY SCHOTTKY 20V ES6
auf Bestellung 3198 Stücke:
Lieferzeit 21-28 Tag (e)HN2S03T(TE85L) |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 20V TESQ
Description: DIODE ARRAY SCHOTTKY 20V TESQ
auf Bestellung 3805 Stücke:
Lieferzeit 21-28 Tag (e)HN4A06J(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 120V 0.1A SMV
Description: TRANS 2PNP 120V 0.1A SMV
Produkt ist nicht verfügbar
HN4B01JE(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 50V 0.15A ESV PLN
Description: TRANS NPN/PNP 50V 0.15A ESV PLN
auf Bestellung 4060 Stücke:
Lieferzeit 21-28 Tag (e)HN4B04J(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP 30V 0.5A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SMV
Part Status: Obsolete
Description: TRANS NPN/PNP 30V 0.5A SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SMV
Part Status: Obsolete
Produkt ist nicht verfügbar
HN4C51J(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 120V 0.1A SMV
Description: TRANS 2NPN 120V 0.1A SMV
auf Bestellung 11176 Stücke:
Lieferzeit 21-28 Tag (e)JDP2S02ACT(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: CST2
Part Status: Active
Current - Max: 50 mA
Description: RF DIODE PIN 30V CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
Resistance @ If, F: 1.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: CST2
Part Status: Active
Current - Max: 50 mA
auf Bestellung 2720 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.12 EUR |
31+ | 0.85 EUR |
100+ | 0.53 EUR |
500+ | 0.36 EUR |
1000+ | 0.28 EUR |
2000+ | 0.25 EUR |
JDP2S02AFS(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V FSC
Description: RF DIODE PIN 30V FSC
auf Bestellung 12924 Stücke:
Lieferzeit 21-28 Tag (e)JDP2S08SC(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 30V SC2
Description: RF DIODE PIN 30V SC2
auf Bestellung 12815 Stücke:
Lieferzeit 21-28 Tag (e)JDP2S12CR(TE85L,Q |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE PIN 180V S-FLAT
Description: RF DIODE PIN 180V S-FLAT
Produkt ist nicht verfügbar
JDV2S10FS(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE STANDARD 10V FSC
Description: RF DIODE STANDARD 10V FSC
auf Bestellung 418 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.96 EUR |
36+ | 0.74 EUR |
100+ | 0.46 EUR |
JDV2S41FS(TPL3) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE STANDARD 15V FSC
Description: RF DIODE STANDARD 15V FSC
auf Bestellung 37306 Stücke:
Lieferzeit 21-28 Tag (e)MT3S20TU(TE85L) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS RF NPN 7GHZ 80MA UFM
Description: TRANS RF NPN 7GHZ 80MA UFM
auf Bestellung 4208 Stücke:
Lieferzeit 21-28 Tag (e)RFM00U7U(TE85L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: FET RF N-CH 20V 520MHZ USQ
Description: FET RF N-CH 20V 520MHZ USQ
Produkt ist nicht verfügbar
RFM01U7P(TE12L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 7.2V PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Mounting Type: Surface Mount
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 1.2W
Gain: 10.8dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PW-MINI
Part Status: Not For New Designs
Voltage - Rated: 20 V
Voltage - Test: 7.2 V
Current - Test: 100 mA
Description: RF MOSFET 7.2V PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Current Rating (Amps): 1A
Mounting Type: Surface Mount
Frequency: 520MHz
Configuration: N-Channel
Power - Output: 1.2W
Gain: 10.8dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PW-MINI
Part Status: Not For New Designs
Voltage - Rated: 20 V
Voltage - Test: 7.2 V
Current - Test: 100 mA
Produkt ist nicht verfügbar
RFM03U3CT(TE12L) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH RF-CST3
Description: MOSFET N-CH RF-CST3
auf Bestellung 1040 Stücke:
Lieferzeit 21-28 Tag (e)RFM04U6P(TE12L,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: RF MOSFET 6V PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Current Rating (Amps): 2A
Mounting Type: Surface Mount
Frequency: 470MHz
Configuration: N-Channel
Power - Output: 4.3W
Gain: 13.3dB
Technology: MOSFET
Supplier Device Package: PW-MINI
Voltage - Rated: 16 V
Voltage - Test: 6 V
Current - Test: 500 mA
Description: RF MOSFET 6V PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Current Rating (Amps): 2A
Mounting Type: Surface Mount
Frequency: 470MHz
Configuration: N-Channel
Power - Output: 4.3W
Gain: 13.3dB
Technology: MOSFET
Supplier Device Package: PW-MINI
Voltage - Rated: 16 V
Voltage - Test: 6 V
Current - Test: 500 mA
Produkt ist nicht verfügbar
RFM08U9X(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PW-X
Description: MOSFET N-CH PW-X
Produkt ist nicht verfügbar
RFM12U7X(TE12L,Q) |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH PW-X
Description: MOSFET N-CH PW-X
Produkt ist nicht verfügbar
RN1102MFV(TL3,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN VESM
Description: TRANSISTOR NPN VESM
auf Bestellung 6679 Stücke:
Lieferzeit 21-28 Tag (e)RN1103,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
auf Bestellung 2999 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.55 EUR |
58+ | 0.45 EUR |
110+ | 0.24 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
RN1104MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W VESM
Description: TRANS PREBIAS NPN 0.15W VESM
auf Bestellung 7870 Stücke:
Lieferzeit 21-28 Tag (e)RN1105MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.15W VESM
Description: TRANS PREBIAS NPN 0.15W VESM
auf Bestellung 9366 Stücke:
Lieferzeit 21-28 Tag (e)RN1105(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN SSM
Description: TRANSISTOR NPN SSM
auf Bestellung 1169 Stücke:
Lieferzeit 21-28 Tag (e)RN1106MFV(TL3,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN1108(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
auf Bestellung 2198 Stücke:
Lieferzeit 21-28 Tag (e)RN1109(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1112(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
RN1113(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)RN1114(T5L,F,T) |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 90 Stücke:
Lieferzeit 21-28 Tag (e)