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SSM3J15CT(TPL3) SSM3J15CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J15CT Description: MOSFET P-CH 30V 0.1A CST3
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SSM3J16CT(TPL3) SSM3J16CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J16CT Description: MOSFET P-CH 20V 0.1A CST3
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SSM3J36MFV,L3F SSM3J36MFV,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J36MFV Description: MOSFET P-CH 20V 0.33A VESM
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SSM3K01T(TE85L,F) SSM3K01T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K01T Description: MOSFET N-CH 30V 3.2A TSM
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SSM3K16CT(TPL3) SSM3K16CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K16CT Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
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SSM3K301T(TE85L,F) SSM3K301T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K301T Description: MOSFET N-CH 20V 3.5A TSM
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SSM3K309T(TE85L,F) SSM3K309T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K309T Description: MOSFET N-CH 20V 4.7A TSM
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SSM3K310T(TE85L,F) SSM3K310T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K310T Description: MOSFET N-CH 20V 5A S-MOS
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SSM3K318T,LF SSM3K318T,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K318T Description: MOSFET N-CH 60V 2.5A TSM
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SSM6L11TU(TE85L,F) SSM6L11TU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6L11TU Description: MOSFET N/P-CH 20V 0.5A UF6 S
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SSM6L16FE(TE85L,F) SSM6L16FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6L16FE Description: MOSFET N/P-CH 20V 0.1A ES6
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TAR5SB18(TE85L,F) TAR5SB18(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TAR5SB18 Description: IC REG LDO 1.8V 0.2A SMV
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TC4SU11F(T5L,F,T) TC4SU11F(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC4SU11F Description: IC GATE NAND 1CH 2-INP SMV
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TC74HC4051AFT(EL,M TC74HC4051AFT(EL,M Toshiba Semiconductor and Storage docget.jsp?did=16132&prodName=TC74HC4051AP Description: IC MUX/DEMUX 8X1 16TSSOP
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TC74VHC27FT(ELK,M) TC74VHC27FT(ELK,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC74VHC27FT Description: IC GATE NOR 3CH 3-INP 14-TSSOP
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TC7SET08F,LJ TC7SET08F,LJ Toshiba Semiconductor and Storage docget.jsp?did=20075&prodName=TC7SET08F Description: IC GATE AND 1CH 2-INP SMV
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TC7SH02F,LJ TC7SH02F,LJ Toshiba Semiconductor and Storage TC7SH02F,fU_Rev2009.pdf Description: IC GATE NOR 1CH 2-INP SMV
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TC7SH32F,LJ Toshiba Semiconductor and Storage TC7SH32F,FU.pdf Description: IC GATE OR 1CH 2-INP SMV
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TC7SH34FS(TPL3) TC7SH34FS(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH34FS Description: IC GATE L-MOS FSV
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TC7W02FK(TE85L,F) TC7W02FK(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20201&prodName=TC7W02FK Description: IC GATE NOR 2CH 2-INP US8
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1SS190TE85LF 1SS190TE85LF Toshiba Semiconductor and Storage 1SS190_datasheet_en_20221128.pdf?did=3270&prodName=1SS190 Description: DIODE STANDARD 80V 100MA SC593
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59-3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
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1SS272TE85LF 1SS272TE85LF Toshiba Semiconductor and Storage 1SS272_datasheet_en_20221020.pdf?did=3285&prodName=1SS272 Description: DIODE ARRAY GP 80V 100MA SC-61B
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
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1SS302TE85LF 1SS302TE85LF Toshiba Semiconductor and Storage 1SS302.pdf Description: DIODE ARRAY GP 80V 100MA SC70
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SS306TE85LF 1SS306TE85LF Toshiba Semiconductor and Storage 1SS306_datasheet_en_20221020.pdf?did=3298&prodName=1SS306 Description: DIODE ARRAY GP 200V 100MA SC-61B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Speed: Small Signal =< 200mA (Io), Any Speed
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1SS360(T5L,F,T) Toshiba Semiconductor and Storage Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS362TE85LF 1SS362TE85LF Toshiba Semiconductor and Storage 1SS362FV_datasheet_en_20221202.pdf?did=22527&prodName=1SS362FV Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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1SS367,H3F 1SS367,H3F Toshiba Semiconductor and Storage docget.jsp?did=3342&prodName=1SS367 Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
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1SS370TE85LF 1SS370TE85LF Toshiba Semiconductor and Storage Description: DIODE GEN PURP 200V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SS379,LF 1SS379,LF Toshiba Semiconductor and Storage 1SS379_datasheet_en_20210625.pdf?did=3356&prodName=1SS379 Description: DIODE ARRAY GP 80V 100MA SC59
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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1SS382TE85LF Toshiba Semiconductor and Storage Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 15000 Stücke:
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3000+0.18 EUR
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1SS384TE85LF 1SS384TE85LF Toshiba Semiconductor and Storage 1SS384_datasheet_en_20180907.pdf?did=3362&prodName=1SS384 Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USQ
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82
Packaging: Tape & Reel (TR)
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1SS394TE85LF 1SS394TE85LF Toshiba Semiconductor and Storage 1SS394_datasheet_en_20171030.pdf?did=3380&prodName=1SS394 Description: DIODE SCHOTTKY 10V 100MA SC59
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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1SS397TE85LF 1SS397TE85LF Toshiba Semiconductor and Storage 1SS397_datasheet_en_20210625.pdf?did=3386&prodName=1SS397 Description: DIODE GEN PURP 400V 100MA SC70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar
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1SS402TE85LF 1SS402TE85LF Toshiba Semiconductor and Storage 1SS402_datasheet_en_20140301.pdf?did=3395&prodName=1SS402 Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
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1SS404,H3F 1SS404,H3F Toshiba Semiconductor and Storage docget.jsp?did=3400&prodName=1SS404 Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
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3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
15000+0.06 EUR
21000+0.057 EUR
30000+0.054 EUR
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2SA1312GRTE85LF 2SA1312GRTE85LF Toshiba Semiconductor and Storage 2SA1312_datasheet_en_20210625.pdf?did=19263&prodName=2SA1312 Description: TRANS PNP 120V 0.1A S-MINI
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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2SA1587-GR,LF 2SA1587-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19172&prodName=2SA1587 Description: TRANS PNP 120V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
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3000+0.077 EUR
6000+0.069 EUR
9000+0.064 EUR
15000+0.06 EUR
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2SA1954BTE85LF 2SA1954BTE85LF Toshiba Semiconductor and Storage Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Produkt ist nicht verfügbar
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2SA1955FVATPL3Z 2SA1955FVATPL3Z Toshiba Semiconductor and Storage 2SA1955FV.pdf Description: TRANS PNP 12V 0.4A CST3
Current - Collector (Ic) (Max): 400 mA
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SA1955FVBTPL3Z 2SA1955FVBTPL3Z Toshiba Semiconductor and Storage 2SA1955FV.pdf Description: TRANS PNP 12V 0.4A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: VESM
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC2712-OTE85LF Toshiba Semiconductor and Storage Description: TRANS NPN 50V 0.15A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
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2SC2713-BL,LF 2SC2713-BL,LF Toshiba Semiconductor and Storage 2SC2713.pdf Description: TRANS NPN 120V 0.1A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC2713-GR,LF 2SC2713-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19229&prodName=2SC2713 Description: TRANS NPN 120V 0.1A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
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6000+0.086 EUR
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15000+0.075 EUR
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2SC3324GRTE85LF 2SC3324GRTE85LF Toshiba Semiconductor and Storage 2SC3324.pdf Description: TRANS NPN 120V 0.1A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC3325-Y,LF 2SC3325-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19247&prodName=2SC3325 Description: TRANS NPN 50V 0.5A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 30000 Stücke:
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6000+0.093 EUR
9000+0.087 EUR
15000+0.081 EUR
21000+0.077 EUR
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2SC3326-B,LF 2SC3326-B,LF Toshiba Semiconductor and Storage docget.jsp?did=19249&prodName=2SC3326 Description: TRANS NPN 20V 0.3A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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2SC4116-BL,LF 2SC4116-BL,LF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SC4213BTE85LF 2SC4213BTE85LF Toshiba Semiconductor and Storage 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213 Description: TRANS NPN 20V 0.3A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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3000+0.15 EUR
6000+0.14 EUR
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2SC5087YTE85LF Toshiba Semiconductor and Storage Description: RF TRANS NPN 12V 7GHZ SMQ
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5232BTE85LF 2SC5232BTE85LF Toshiba Semiconductor and Storage Description: TRANS NPN 12V 0.5A SC59
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-59
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Produkt ist nicht verfügbar
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2SC5233BTE85LF 2SC5233BTE85LF Toshiba Semiconductor and Storage Description: TRANS NPN 12V 0.5A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC6026CTGRTPL3 2SC6026CTGRTPL3 Toshiba Semiconductor and Storage docget.jsp?did=713&prodName=2SC6026CT Description: TRANS NPN 50V 0.1A CST3
Produkt ist nicht verfügbar
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2SJ168TE85LF 2SJ168TE85LF Toshiba Semiconductor and Storage 2SJ168_datasheet_en_20140301.pdf?did=19506&prodName=2SJ168 Description: MOSFET P-CH 60V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
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2SJ305TE85LF 2SJ305TE85LF Toshiba Semiconductor and Storage 2SJ305_datasheet_en_20140301.pdf?did=19508&prodName=2SJ305 Description: MOSFET P-CH 30V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
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3000+0.32 EUR
6000+0.3 EUR
9000+0.29 EUR
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2SK1828TE85LF 2SK1828TE85LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 50MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK1829TE85LF 2SK1829TE85LF Toshiba Semiconductor and Storage 2SK1829_datasheet_en_20140301.pdf?did=19538&prodName=2SK1829 Description: MOSFET N-CH 20V 50MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK2009TE85LF 2SK2009TE85LF Toshiba Semiconductor and Storage 2SK2009_datasheet_en_20140301.pdf?did=19542&prodName=2SK2009 Description: MOSFET N-CH 30V 200MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
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2SK2034TE85LF 2SK2034TE85LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK880GRTE85LF 2SK880GRTE85LF Toshiba Semiconductor and Storage 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880 Description: JFET N-CH 50V SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
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DF2S6.2FS,L3M DF2S6.2FS,L3M Toshiba Semiconductor and Storage docget.jsp?did=22218&prodName=DF2S6.2FS Description: TVS DIODE 5VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
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10000+0.056 EUR
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SSM3J15CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3J15CT
SSM3J15CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 0.1A CST3
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SSM3J16CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3J16CT
SSM3J16CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.1A CST3
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SSM3J36MFV,L3F docget.jsp?type=datasheet&lang=en&pid=SSM3J36MFV
SSM3J36MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.33A VESM
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SSM3K01T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K01T
SSM3K01T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3.2A TSM
Produkt ist nicht verfügbar
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SSM3K16CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3K16CT
SSM3K16CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
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SSM3K301T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K301T
SSM3K301T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.5A TSM
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SSM3K309T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K309T
SSM3K309T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.7A TSM
Produkt ist nicht verfügbar
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SSM3K310T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K310T
SSM3K310T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 5A S-MOS
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SSM3K318T,LF docget.jsp?type=datasheet&lang=en&pid=SSM3K318T
SSM3K318T,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
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SSM6L11TU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM6L11TU
SSM6L11TU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A UF6 S
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SSM6L16FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM6L16FE
SSM6L16FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.1A ES6
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TAR5SB18(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=TAR5SB18
TAR5SB18(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A SMV
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TC4SU11F(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=TC4SU11F
TC4SU11F(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
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TC74HC4051AFT(EL,M docget.jsp?did=16132&prodName=TC74HC4051AP
TC74HC4051AFT(EL,M
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 8X1 16TSSOP
Produkt ist nicht verfügbar
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TC74VHC27FT(ELK,M) docget.jsp?type=datasheet&lang=en&pid=TC74VHC27FT
TC74VHC27FT(ELK,M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 3CH 3-INP 14-TSSOP
Produkt ist nicht verfügbar
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TC7SET08F,LJ docget.jsp?did=20075&prodName=TC7SET08F
TC7SET08F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH02F,LJ TC7SH02F,fU_Rev2009.pdf
TC7SH02F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH32F,LJ TC7SH32F,FU.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH34FS(TPL3) docget.jsp?type=datasheet&lang=en&pid=TC7SH34FS
TC7SH34FS(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS FSV
auf Bestellung 12469 Stücke:
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TC7W02FK(TE85L,F) docget.jsp?did=20201&prodName=TC7W02FK
TC7W02FK(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP US8
Produkt ist nicht verfügbar
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1SS190TE85LF 1SS190_datasheet_en_20221128.pdf?did=3270&prodName=1SS190
1SS190TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SC593
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59-3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
auf Bestellung 27000 Stücke:
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AnzahlPrivatkunde
3000+0.11 EUR
9000+0.094 EUR
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1SS272TE85LF 1SS272_datasheet_en_20221020.pdf?did=3285&prodName=1SS272
1SS272TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-61B
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
auf Bestellung 30000 Stücke:
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3000+0.11 EUR
6000+0.1 EUR
9000+0.1 EUR
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1SS302TE85LF 1SS302.pdf
1SS302TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SS306TE85LF 1SS306_datasheet_en_20221020.pdf?did=3298&prodName=1SS306
1SS306TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 100MA SC-61B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Speed: Small Signal =< 200mA (Io), Any Speed
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3000+1.43 EUR
6000+1.38 EUR
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1SS360(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS362TE85LF 1SS362FV_datasheet_en_20221202.pdf?did=22527&prodName=1SS362FV
1SS362TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 9000 Stücke:
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AnzahlPrivatkunde
3000+0.11 EUR
9000+0.095 EUR
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1SS367,H3F docget.jsp?did=3342&prodName=1SS367
1SS367,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 20570 Stücke:
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3000+0.075 EUR
9000+0.063 EUR
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1SS370TE85LF
1SS370TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SS379,LF 1SS379_datasheet_en_20210625.pdf?did=3356&prodName=1SS379
1SS379,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC59
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
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AnzahlPrivatkunde
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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1SS382TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
3000+0.18 EUR
9000+0.15 EUR
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1SS384TE85LF 1SS384_datasheet_en_20180907.pdf?did=3362&prodName=1SS384
1SS384TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USQ
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.11 EUR
9000+0.098 EUR
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1SS394TE85LF 1SS394_datasheet_en_20171030.pdf?did=3380&prodName=1SS394
1SS394TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA SC59
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.12 EUR
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1SS397TE85LF 1SS397_datasheet_en_20210625.pdf?did=3386&prodName=1SS397
1SS397TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 100MA SC70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar
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1SS402TE85LF 1SS402_datasheet_en_20140301.pdf?did=3395&prodName=1SS402
1SS402TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.18 EUR
9000+0.15 EUR
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1SS404,H3F docget.jsp?did=3400&prodName=1SS404
1SS404,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
15000+0.06 EUR
21000+0.057 EUR
30000+0.054 EUR
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2SA1312GRTE85LF 2SA1312_datasheet_en_20210625.pdf?did=19263&prodName=2SA1312
2SA1312GRTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SA1587-GR,LF docget.jsp?did=19172&prodName=2SA1587
2SA1587-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.077 EUR
6000+0.069 EUR
9000+0.064 EUR
15000+0.06 EUR
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2SA1954BTE85LF
2SA1954BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Produkt ist nicht verfügbar
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2SA1955FVATPL3Z 2SA1955FV.pdf
2SA1955FVATPL3Z
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3
Current - Collector (Ic) (Max): 400 mA
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SA1955FVBTPL3Z 2SA1955FV.pdf
2SA1955FVBTPL3Z
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: VESM
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC2712-OTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.071 EUR
6000+0.064 EUR
9000+0.06 EUR
Mindestbestellmenge: 3000 Stücke
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2SC2713-BL,LF 2SC2713.pdf
2SC2713-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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2SC2713-GR,LF docget.jsp?did=19229&prodName=2SC2713
2SC2713-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.096 EUR
6000+0.086 EUR
9000+0.081 EUR
15000+0.075 EUR
21000+0.071 EUR
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2SC3324GRTE85LF 2SC3324.pdf
2SC3324GRTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
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2SC3325-Y,LF docget.jsp?did=19247&prodName=2SC3325
2SC3325-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.5A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 30000 Stücke:
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3000+0.1 EUR
6000+0.093 EUR
9000+0.087 EUR
15000+0.081 EUR
21000+0.077 EUR
30000+0.074 EUR
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2SC3326-B,LF docget.jsp?did=19249&prodName=2SC3326
2SC3326-B,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A TO-236
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: TO-236
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.14 EUR
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2SC4116-BL,LF docget.jsp?did=19292&prodName=2SC4116
2SC4116-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SC4213BTE85LF 2SC4213_datasheet_en_20210625.pdf?did=19305&prodName=2SC4213
2SC4213BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 20V 0.3A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
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2SC5087YTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 12V 7GHZ SMQ
Packaging: Tape & Reel (TR)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Gain: 13dB
Power - Max: 150mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: SMQ
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SC5232BTE85LF
2SC5232BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A SC59
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-59
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Produkt ist nicht verfügbar
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2SC5233BTE85LF
2SC5233BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 12V 0.5A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: USM
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC6026CTGRTPL3 docget.jsp?did=713&prodName=2SC6026CT
2SC6026CTGRTPL3
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.1A CST3
Produkt ist nicht verfügbar
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2SJ168TE85LF 2SJ168_datasheet_en_20140301.pdf?did=19506&prodName=2SJ168
2SJ168TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 10 V
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2SJ305TE85LF 2SJ305_datasheet_en_20140301.pdf?did=19508&prodName=2SJ305
2SJ305TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 50mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: SC-59
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 3 V
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3000+0.32 EUR
6000+0.3 EUR
9000+0.29 EUR
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2SK1828TE85LF
2SK1828TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK1829TE85LF 2SK1829_datasheet_en_20140301.pdf?did=19538&prodName=2SK1829
2SK1829TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 50MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 40Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK2009TE85LF 2SK2009_datasheet_en_20140301.pdf?did=19542&prodName=2SK2009
2SK2009TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 200MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-59-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
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AnzahlPrivatkunde
3000+0.38 EUR
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2SK2034TE85LF
2SK2034TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 2.5V
Power Dissipation (Max): 100mW (Ta)
Supplier Device Package: SC-70
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Produkt ist nicht verfügbar
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2SK880GRTE85LF 2SK880_datasheet_en_20140301.pdf?did=19699&prodName=2SK880
2SK880GRTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Supplier Device Package: SC-70
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
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3000+0.36 EUR
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DF2S6.2FS,L3M docget.jsp?did=22218&prodName=DF2S6.2FS
DF2S6.2FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 510000 Stücke:
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AnzahlPrivatkunde
10000+0.056 EUR
30000+0.048 EUR
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