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RN1317(TE85L,F) RN1317(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1314 Description: TRANS PREBIAS NPN 0.1W USM
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RN1318(TE85L,F) RN1318(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1314 Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 2835 Stücke:
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RN1904(T5L,F,T) RN1904(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902 Description: TRANSISTOR NPN US6
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RN1906(T5L,F,T) RN1906(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
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RN1961FE(TE85L,F) RN1961FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1961FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2311(TE85L,F) RN2311(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2310 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 2650 Stücke:
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RN2312(TE85L,F) RN2312(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2312 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
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RN2313(TE85L,F) RN2313(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2312 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
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RN2314(TE85L,F) RN2314(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2314 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 2980 Stücke:
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RN2316(TE85L,F) RN2316(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2314 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
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RN2318(TE85L,F) RN2318(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2314 Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 1500 Stücke:
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RN4906(T5L,F,T) RN4906(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4906 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4981,LF(CT RN4981,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4981 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 7895 Stücke:
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RN4983(T5L,F,T) RN4983(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4983 Description: TRANS NPN PNP 50V 100MA US6
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RN4984(T5L,F,T) RN4984(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4984 Description: TRANS NPN/PNP PREBIAS 0.2W US6
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RN4986(T5L,F,T) RN4986(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4986 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 2730 Stücke:
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RN4988(T5L,F,T) RN4988(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4988 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
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RN4989(T5L,F,T) RN4989(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4989 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
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RN4990(T5L,F,T) RN4990(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4990 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
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SSM3J15CT(TPL3) SSM3J15CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J15CT Description: MOSFET P-CH 30V 0.1A CST3
auf Bestellung 885 Stücke:
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SSM3J16CT(TPL3) SSM3J16CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J16CT Description: MOSFET P-CH 20V 0.1A CST3
auf Bestellung 9153 Stücke:
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SSM3J36MFV,L3F SSM3J36MFV,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3J36MFV Description: MOSFET P-CH 20V 0.33A VESM
auf Bestellung 9353 Stücke:
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SSM3K01T(TE85L,F) SSM3K01T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K01T Description: MOSFET N-CH 30V 3.2A TSM
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SSM3K16CT(TPL3) SSM3K16CT(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K16CT Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
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SSM3K301T(TE85L,F) SSM3K301T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K301T Description: MOSFET N-CH 20V 3.5A TSM
auf Bestellung 11 Stücke:
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SSM3K309T(TE85L,F) SSM3K309T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K309T Description: MOSFET N-CH 20V 4.7A TSM
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SSM3K310T(TE85L,F) SSM3K310T(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K310T Description: MOSFET N-CH 20V 5A S-MOS
auf Bestellung 4791 Stücke:
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SSM3K318T,LF SSM3K318T,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM3K318T Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
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SSM6L11TU(TE85L,F) SSM6L11TU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6L11TU Description: MOSFET N/P-CH 20V 0.5A UF6 S
Produkt ist nicht verfügbar
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SSM6L16FE(TE85L,F) SSM6L16FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6L16FE Description: MOSFET N/P-CH 20V 0.1A ES6
auf Bestellung 3829 Stücke:
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TAR5SB18(TE85L,F) TAR5SB18(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TAR5SB18 Description: IC REG LDO 1.8V 0.2A SMV
Produkt ist nicht verfügbar
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TC4SU11F(T5L,F,T) TC4SU11F(T5L,F,T) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC4SU11F Description: IC GATE NAND 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC74HC4051AFT(EL,M TC74HC4051AFT(EL,M Toshiba Semiconductor and Storage docget.jsp?did=16132&prodName=TC74HC4051AP Description: IC MUX/DEMUX 8X1 16TSSOP
Produkt ist nicht verfügbar
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TC74VHC27FT(ELK,M) TC74VHC27FT(ELK,M) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC74VHC27FT Description: IC GATE NOR 3CH 3-INP 14-TSSOP
Produkt ist nicht verfügbar
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TC7SET08F,LJ TC7SET08F,LJ Toshiba Semiconductor and Storage docget.jsp?did=20075&prodName=TC7SET08F Description: IC GATE AND 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH02F,LJ TC7SH02F,LJ Toshiba Semiconductor and Storage TC7SH02F,fU_Rev2009.pdf Description: IC GATE NOR 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH32F,LJ Toshiba Semiconductor and Storage TC7SH32F,FU.pdf Description: IC GATE OR 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH34FS(TPL3) TC7SH34FS(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH34FS Description: IC GATE L-MOS FSV
auf Bestellung 12469 Stücke:
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TC7W02FK(TE85L,F) TC7W02FK(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=20201&prodName=TC7W02FK Description: IC GATE NOR 2CH 2-INP US8
Produkt ist nicht verfügbar
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1SS190TE85LF 1SS190TE85LF Toshiba Semiconductor and Storage 1SS190_datasheet_en_20221128.pdf?did=3270&prodName=1SS190 Description: DIODE GEN PURP 80V 100MA SC59-3
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59-3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.1 EUR
9000+0.086 EUR
30000+0.083 EUR
Mindestbestellmenge: 3000 Stücke
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1SS272TE85LF 1SS272TE85LF Toshiba Semiconductor and Storage 1SS272_datasheet_en_20221020.pdf?did=3285&prodName=1SS272 Description: DIODE ARRAY GP 80V 100MA SC-61B
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.1 EUR
9000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
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1SS302TE85LF 1SS302TE85LF Toshiba Semiconductor and Storage 1SS302.pdf Description: DIODE ARRAY GP 80V 100MA SC70
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SS306TE85LF 1SS306TE85LF Toshiba Semiconductor and Storage 1SS306_datasheet_en_20221020.pdf?did=3298&prodName=1SS306 Description: DIODE ARRAY GP 200V 100MA SC-61B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Speed: Small Signal =< 200mA (Io), Any Speed
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.43 EUR
6000+1.38 EUR
Mindestbestellmenge: 3000 Stücke
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1SS360(T5L,F,T) Toshiba Semiconductor and Storage Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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1SS362TE85LF 1SS362TE85LF Toshiba Semiconductor and Storage 1SS362FV_datasheet_en_20221202.pdf?did=22527&prodName=1SS362FV Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.1 EUR
9000+0.098 EUR
15000+0.09 EUR
Mindestbestellmenge: 3000 Stücke
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1SS367,H3F 1SS367,H3F Toshiba Semiconductor and Storage docget.jsp?did=3342&prodName=1SS367 Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
15000+0.06 EUR
21000+0.057 EUR
30000+0.054 EUR
Mindestbestellmenge: 3000 Stücke
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1SS370TE85LF 1SS370TE85LF Toshiba Semiconductor and Storage Description: DIODE GEN PURP 200V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SS379,LF 1SS379,LF Toshiba Semiconductor and Storage 1SS379_datasheet_en_20210625.pdf?did=3356&prodName=1SS379 Description: DIODE ARRAY GP 80V 100MA SC59
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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1SS382TE85LF Toshiba Semiconductor and Storage Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
1SS384TE85LF 1SS384TE85LF Toshiba Semiconductor and Storage 1SS384_datasheet_en_20180907.pdf?did=3362&prodName=1SS384 Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USQ
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.11 EUR
9000+0.098 EUR
Mindestbestellmenge: 3000 Stücke
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1SS394TE85LF 1SS394TE85LF Toshiba Semiconductor and Storage 1SS394_datasheet_en_20171030.pdf?did=3380&prodName=1SS394 Description: DIODE SCHOTTKY 10V 100MA SC59
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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1SS397TE85LF 1SS397TE85LF Toshiba Semiconductor and Storage 1SS397_datasheet_en_20210625.pdf?did=3386&prodName=1SS397 Description: DIODE GEN PURP 400V 100MA SC70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar
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1SS402TE85LF 1SS402TE85LF Toshiba Semiconductor and Storage 1SS402_datasheet_en_20140301.pdf?did=3395&prodName=1SS402 Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
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1SS404,H3F 1SS404,H3F Toshiba Semiconductor and Storage docget.jsp?did=3400&prodName=1SS404 Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
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6000+0.068 EUR
9000+0.064 EUR
15000+0.06 EUR
21000+0.057 EUR
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2SA1312GRTE85LF 2SA1312GRTE85LF Toshiba Semiconductor and Storage 2SA1312_datasheet_en_20210625.pdf?did=19263&prodName=2SA1312 Description: TRANS PNP 120V 0.1A S-MINI
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SA1587-GR,LF 2SA1587-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19172&prodName=2SA1587 Description: TRANS PNP 120V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
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9000+0.064 EUR
15000+0.06 EUR
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2SA1954BTE85LF 2SA1954BTE85LF Toshiba Semiconductor and Storage Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Produkt ist nicht verfügbar
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2SA1955FVATPL3Z 2SA1955FVATPL3Z Toshiba Semiconductor and Storage 2SA1955FV.pdf Description: TRANS PNP 12V 0.4A CST3
Current - Collector (Ic) (Max): 400 mA
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SA1955FVBTPL3Z 2SA1955FVBTPL3Z Toshiba Semiconductor and Storage 2SA1955FV.pdf Description: TRANS PNP 12V 0.4A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: VESM
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC2712-OTE85LF Toshiba Semiconductor and Storage Description: TRANS NPN 50V 0.15A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 12000 Stücke:
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6000+0.064 EUR
9000+0.06 EUR
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RN1317(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1314
RN1317(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
Produkt ist nicht verfügbar
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RN1318(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1314
RN1318(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W USM
auf Bestellung 2835 Stücke:
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RN1904(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1902
RN1904(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN US6
Produkt ist nicht verfügbar
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RN1906(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1906(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN1961FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN1961FE
RN1961FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Produkt ist nicht verfügbar
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RN2311(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2310
RN2311(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 2650 Stücke:
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RN2312(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2312
RN2312(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
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RN2313(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2312
RN2313(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 3000 Stücke:
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RN2314(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2314
RN2314(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 2980 Stücke:
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RN2316(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2314
RN2316(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
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RN2318(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=RN2314
RN2318(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 0.1W USM
auf Bestellung 1500 Stücke:
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RN4906(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4906
RN4906(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4981,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4981
RN4981,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 7895 Stücke:
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RN4983(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4983
RN4983(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN PNP 50V 100MA US6
Produkt ist nicht verfügbar
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RN4984(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4984
RN4984(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4986(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4986
RN4986(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 2730 Stücke:
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RN4988(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4988
RN4988(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
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RN4989(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4989
RN4989(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
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RN4990(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=RN4990
RN4990(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
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SSM3J15CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3J15CT
SSM3J15CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 0.1A CST3
auf Bestellung 885 Stücke:
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SSM3J16CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3J16CT
SSM3J16CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.1A CST3
auf Bestellung 9153 Stücke:
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SSM3J36MFV,L3F docget.jsp?type=datasheet&lang=en&pid=SSM3J36MFV
SSM3J36MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 0.33A VESM
auf Bestellung 9353 Stücke:
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SSM3K01T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K01T
SSM3K01T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 3.2A TSM
Produkt ist nicht verfügbar
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SSM3K16CT(TPL3) docget.jsp?type=datasheet&lang=en&pid=SSM3K16CT
SSM3K16CT(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 0.1A CST3 S-MOS
Produkt ist nicht verfügbar
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SSM3K301T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K301T
SSM3K301T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 3.5A TSM
auf Bestellung 11 Stücke:
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SSM3K309T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K309T
SSM3K309T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.7A TSM
Produkt ist nicht verfügbar
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SSM3K310T(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM3K310T
SSM3K310T(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 5A S-MOS
auf Bestellung 4791 Stücke:
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SSM3K318T,LF docget.jsp?type=datasheet&lang=en&pid=SSM3K318T
SSM3K318T,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A TSM
Produkt ist nicht verfügbar
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SSM6L11TU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM6L11TU
SSM6L11TU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.5A UF6 S
Produkt ist nicht verfügbar
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SSM6L16FE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=SSM6L16FE
SSM6L16FE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.1A ES6
auf Bestellung 3829 Stücke:
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TAR5SB18(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=TAR5SB18
TAR5SB18(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.8V 0.2A SMV
Produkt ist nicht verfügbar
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TC4SU11F(T5L,F,T) docget.jsp?type=datasheet&lang=en&pid=TC4SU11F
TC4SU11F(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC74HC4051AFT(EL,M docget.jsp?did=16132&prodName=TC74HC4051AP
TC74HC4051AFT(EL,M
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 8X1 16TSSOP
Produkt ist nicht verfügbar
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TC74VHC27FT(ELK,M) docget.jsp?type=datasheet&lang=en&pid=TC74VHC27FT
TC74VHC27FT(ELK,M)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 3CH 3-INP 14-TSSOP
Produkt ist nicht verfügbar
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TC7SET08F,LJ docget.jsp?did=20075&prodName=TC7SET08F
TC7SET08F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH02F,LJ TC7SH02F,fU_Rev2009.pdf
TC7SH02F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH32F,LJ TC7SH32F,FU.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SH34FS(TPL3) docget.jsp?type=datasheet&lang=en&pid=TC7SH34FS
TC7SH34FS(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE L-MOS FSV
auf Bestellung 12469 Stücke:
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TC7W02FK(TE85L,F) docget.jsp?did=20201&prodName=TC7W02FK
TC7W02FK(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 2CH 2-INP US8
Produkt ist nicht verfügbar
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1SS190TE85LF 1SS190_datasheet_en_20221128.pdf?did=3270&prodName=1SS190
1SS190TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC59-3
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59-3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.1 EUR
9000+0.086 EUR
30000+0.083 EUR
Mindestbestellmenge: 3000 Stücke
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1SS272TE85LF 1SS272_datasheet_en_20221020.pdf?did=3285&prodName=1SS272
1SS272TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-61B
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.1 EUR
9000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
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1SS302TE85LF 1SS302.pdf
1SS302TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SS306TE85LF 1SS306_datasheet_en_20221020.pdf?did=3298&prodName=1SS306
1SS306TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 200V 100MA SC-61B
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Tape & Reel (TR)
Speed: Small Signal =< 200mA (Io), Any Speed
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1SS360(T5L,F,T)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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1SS362TE85LF 1SS362FV_datasheet_en_20221202.pdf?did=22527&prodName=1SS362FV
1SS362TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 80MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
3000+0.12 EUR
6000+0.1 EUR
9000+0.098 EUR
15000+0.09 EUR
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1SS367,H3F docget.jsp?did=3342&prodName=1SS367
1SS367,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 36000 Stücke:
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3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
15000+0.06 EUR
21000+0.057 EUR
30000+0.054 EUR
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1SS370TE85LF
1SS370TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA SC70
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1SS379,LF 1SS379_datasheet_en_20210625.pdf?did=3356&prodName=1SS379
1SS379,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC59
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
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AnzahlPrivatkunde
3000+0.17 EUR
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1SS382TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GEN PURP 80V 100MA
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3000 Stücke:
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3000+0.17 EUR
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1SS384TE85LF 1SS384_datasheet_en_20180907.pdf?did=3362&prodName=1SS384
1SS384TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 10V 100MA USQ
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: USQ
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-82
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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3000+0.11 EUR
6000+0.11 EUR
9000+0.098 EUR
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1SS394TE85LF 1SS394_datasheet_en_20171030.pdf?did=3380&prodName=1SS394
1SS394TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA SC59
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 10 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-59
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.12 EUR
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1SS397TE85LF 1SS397_datasheet_en_20210625.pdf?did=3386&prodName=1SS397
1SS397TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 400V 100MA SC70
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SC-70
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Produkt ist nicht verfügbar
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1SS402TE85LF 1SS402_datasheet_en_20140301.pdf?did=3395&prodName=1SS402
1SS402TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 20V 50MA USQ
Packaging: Tape & Reel (TR)
Package / Case: SC-82
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50mA
Supplier Device Package: USQ
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 12000 Stücke:
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3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
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1SS404,H3F docget.jsp?did=3400&prodName=1SS404
1SS404,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 300MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 46pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 300 mA
Current - Reverse Leakage @ Vr: 50 µA @ 20 V
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
15000+0.06 EUR
21000+0.057 EUR
30000+0.054 EUR
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2SA1312GRTE85LF 2SA1312_datasheet_en_20210625.pdf?did=19263&prodName=2SA1312
2SA1312GRTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A S-MINI
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SA1587-GR,LF docget.jsp?did=19172&prodName=2SA1587
2SA1587-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 120V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.077 EUR
6000+0.069 EUR
9000+0.064 EUR
15000+0.06 EUR
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2SA1954BTE85LF
2SA1954BTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.5A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 125°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SC-70
Produkt ist nicht verfügbar
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2SA1955FVATPL3Z 2SA1955FV.pdf
2SA1955FVATPL3Z
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A CST3
Current - Collector (Ic) (Max): 400 mA
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Part Status: Obsolete
Supplier Device Package: CST3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SA1955FVBTPL3Z 2SA1955FV.pdf
2SA1955FVBTPL3Z
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 12V 0.4A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: VESM
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
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2SC2712-OTE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A TO-236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-236
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.071 EUR
6000+0.064 EUR
9000+0.06 EUR
Mindestbestellmenge: 3000 Stücke
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