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TB62213AFTG,8,EL TB62213AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=22890&prodName=TB62213AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62213AFTG,8,EL TB62213AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=22890&prodName=TB62213AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 1985 Stücke:
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TB62214AFTG,8,EL TB62214AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62214AFG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3372 Stücke:
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TB62214AFTG,8,EL TB62214AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62214AFG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3372 Stücke:
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TB62215AFTG,8,EL TB62215AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3995 Stücke:
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TB62215AFTG,8,EL TB62215AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3995 Stücke:
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TB62216FTG,8,EL TB62216FTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62216FTG Description: IC MOTOR DRIVER PAR 48QFN
Produkt ist nicht verfügbar
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TB62216FTG,8,EL TB62216FTG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62216FTG Description: IC MOTOR DRIVER PAR 48QFN
Produkt ist nicht verfügbar
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TB62218AFTG,8,EL TB62218AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=13039&prodName=TB62218AFTG Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2823 Stücke:
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TB62218AFTG,8,EL TB62218AFTG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=13039&prodName=TB62218AFTG Description: IC MOTOR DRIVER PAR 48QFN
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TB6575FNG(O,C,8,EL Toshiba Semiconductor and Storage DST_TB6575FNG-TDE_EN_12013.pdf Description: IC MOTOR CONTROLLER PAR 24SSOP
auf Bestellung 4997 Stücke:
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TB6575FNG(O,C,8,EL Toshiba Semiconductor and Storage DST_TB6575FNG-TDE_EN_12013.pdf Description: IC MOTOR CONTROLLER PAR 24SSOP
auf Bestellung 4997 Stücke:
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TB62208FG,8,EL TB62208FG,8,EL Toshiba Semiconductor and Storage docget.jsp?did=7125&prodName=TB62208FG Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
Produkt ist nicht verfügbar
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TB62208FNG,C8,EL TB62208FNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62208FNG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 780 Stücke:
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TB62208FNG,C8,EL TB62208FNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62208FNG Description: IC MOTOR DRIVER PAR 48HTSSOP
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TB62212FNG,C8,EL TB62212FNG,C8,EL Toshiba Semiconductor and Storage TB62212FNG.pdf Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
auf Bestellung 453 Stücke:
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TB62212FTAG,C8,EL TB62212FTAG,C8,EL Toshiba Semiconductor and Storage TB62212FTAG_datasheet_en_20141001.pdf?did=6255&prodName=TB62212FTAG Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 6159 Stücke:
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4+4.59 EUR
10+4.13 EUR
25+3.9 EUR
100+3.32 EUR
250+3.12 EUR
500+2.73 EUR
1000+2.26 EUR
Mindestbestellmenge: 4
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TB62213AFNG,C8,EL TB62213AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=22889&prodName=TB62213AFNG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 2000 Stücke:
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TB62213AFNG,C8,EL TB62213AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=22889&prodName=TB62213AFNG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 2000 Stücke:
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TB62214AFG,8,EL TB62214AFG,8,EL Toshiba Semiconductor and Storage TB62214AFG_Summary.pdf Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB62214AFNG,C8,EL TB62214AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=13036&prodName=TB62214AFNG Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
auf Bestellung 3032 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.03 EUR
10+4.52 EUR
25+4.26 EUR
100+3.63 EUR
250+3.41 EUR
500+2.98 EUR
Mindestbestellmenge: 4
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TB62215AFG,8,EL TB62215AFG,8,EL Toshiba Semiconductor and Storage TB62215AFG_Summary.pdf Description: IC MOTOR DRIVER PAR 28HSOP
auf Bestellung 1528 Stücke:
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TB62215AFG,8,EL TB62215AFG,8,EL Toshiba Semiconductor and Storage TB62215AFG_Summary.pdf Description: IC MOTOR DRIVER PAR 28HSOP
auf Bestellung 1528 Stücke:
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TB62215AFNG,C8,EL TB62215AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 983 Stücke:
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TB62215AFNG,C8,EL TB62215AFNG,C8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 983 Stücke:
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TB62216FG,8,EL TB62216FG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62216FG Description: IC MOTOR DRIVER PAR 28HSOP
Produkt ist nicht verfügbar
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TB62216FG,8,EL TB62216FG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62216FG Description: IC MOTOR DRIVER PAR 28HSOP
Produkt ist nicht verfügbar
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TC7SZU04FUTF TC7SZU04FUTF Toshiba Semiconductor and Storage Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 16mA, 16mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC74LVX373FW TC74LVX373FW Toshiba Semiconductor and Storage 886.pdf Description: IC LATCH OCTAL D-TYPE 20-SOL
auf Bestellung 2360 Stücke:
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TK10A60W,S4VX TK10A60W,S4VX Toshiba Semiconductor and Storage docget.jsp?did=13486&prodName=TK10A60W Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.9 EUR
Mindestbestellmenge: 7
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TK16A60W,S4VX TK16A60W,S4VX Toshiba Semiconductor and Storage docget.jsp?did=13490&prodName=TK16A60W Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.33 EUR
Mindestbestellmenge: 4
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TK56E12N1,S1X TK56E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13465&prodName=TK56E12N1 Description: MOSFET N CH 120V 56A TO-220
Produkt ist nicht verfügbar
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TK72E12N1,S1X TK72E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13466&prodName=TK72E12N1 Description: MOSFET N CH 120V 72A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.6 EUR
Mindestbestellmenge: 4
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TPH1400ANH,L1Q TPH1400ANH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=12774&prodName=TPH1400ANH Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.81 EUR
Mindestbestellmenge: 5000
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TPH8R80ANH,L1Q TPH8R80ANH,L1Q Toshiba Semiconductor and Storage TPH8R80ANH_datasheet_en_20140218.pdf?did=12776&prodName=TPH8R80ANH Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.2 EUR
Mindestbestellmenge: 5000
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TPN22006NH,LQ TPN22006NH,LQ Toshiba Semiconductor and Storage TPN22006NH_datasheet_en_20140107.pdf?did=13666&prodName=TPN22006NH Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.68 EUR
Mindestbestellmenge: 3000
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TPN30008NH,LQ TPN30008NH,LQ Toshiba Semiconductor and Storage TPN30008NH_datasheet_en_20140218.pdf?did=13035&prodName=TPN30008NH Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
Produkt ist nicht verfügbar
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TPN3300ANH,LQ TPN3300ANH,LQ Toshiba Semiconductor and Storage TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Produkt ist nicht verfügbar
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TPH1400ANH,L1Q TPH1400ANH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=12774&prodName=TPH1400ANH Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 9733 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.06 EUR
10+1.96 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPH8R80ANH,L1Q TPH8R80ANH,L1Q Toshiba Semiconductor and Storage TPH8R80ANH_datasheet_en_20140218.pdf?did=12776&prodName=TPH8R80ANH Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 29260 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
10+2.31 EUR
100+1.64 EUR
500+1.39 EUR
1000+1.26 EUR
2000+1.23 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TPN22006NH,LQ TPN22006NH,LQ Toshiba Semiconductor and Storage TPN22006NH_datasheet_en_20140107.pdf?did=13666&prodName=TPN22006NH Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 5722 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.99 EUR
13+1.4 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.77 EUR
Mindestbestellmenge: 9
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TPN30008NH,LQ TPN30008NH,LQ Toshiba Semiconductor and Storage TPN30008NH_datasheet_en_20140218.pdf?did=13035&prodName=TPN30008NH Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
auf Bestellung 2735 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.27 EUR
13+1.42 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
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TPN3300ANH,LQ TPN3300ANH,LQ Toshiba Semiconductor and Storage TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 4306 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.29 EUR
13+1.44 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
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TK42E12N1,S1X TK42E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13464&prodName=TK42E12N1 Description: MOSFET N CH 120V 88A TO-220
Produkt ist nicht verfügbar
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TK6A60W,S4VX TK6A60W,S4VX Toshiba Semiconductor and Storage docget.jsp?did=13527&prodName=TK6A60W Description: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.31 EUR
Mindestbestellmenge: 6
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TPN2R503NC,L1Q TPN2R503NC,L1Q Toshiba Semiconductor and Storage docget.jsp?did=13638&prodName=TPN2R503NC Description: MOSFET N CH 30V 40A 8TSON-ADV
Produkt ist nicht verfügbar
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TPN2R503NC,L1Q TPN2R503NC,L1Q Toshiba Semiconductor and Storage docget.jsp?did=13638&prodName=TPN2R503NC Description: MOSFET N CH 30V 40A 8TSON-ADV
Produkt ist nicht verfügbar
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TK31J60W5,S1VQ TK31J60W5,S1VQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK31J60W5 Description: MOSFET N-CH 600V 30.8A TO-3P(N)
Produkt ist nicht verfügbar
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TK39J60W,S1VQ TK39J60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?did=13496&prodName=TK39J60W Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.87 EUR
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TK39J60W5,S1VQ TK39J60W5,S1VQ Toshiba Semiconductor and Storage TK39J60W5_datasheet_en_20131226.pdf?did=13749&prodName=TK39J60W5 Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.69 EUR
25+14.92 EUR
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TK31E60W,S1VX TK31E60W,S1VX Toshiba Semiconductor and Storage TK31E60W_datasheet_en_20131226.pdf?did=13524&prodName=TK31E60W Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.06 EUR
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TK31J60W,S1VQ TK31J60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?did=13525&prodName=TK31J60W Description: MOSFET N-CH 600V 30.8A TO3P
Produkt ist nicht verfügbar
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TK7P60W,RVQ TK7P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13578&prodName=TK7P60W Description: MOSFET N CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
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TK7P60W,RVQ TK7P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13578&prodName=TK7P60W Description: MOSFET N CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 1986 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.47 EUR
10+2.05 EUR
100+1.98 EUR
Mindestbestellmenge: 4
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TK32E12N1,S1X TK32E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13460&prodName=TK32E12N1 Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.57 EUR
50+1.79 EUR
Mindestbestellmenge: 5
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TPN6R303NC,LQ Toshiba Semiconductor and Storage docget.jsp?did=13640&prodName=TPN6R303NC Description: MOSFET N CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
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TPN6R303NC,LQ Toshiba Semiconductor and Storage docget.jsp?did=13640&prodName=TPN6R303NC Description: MOSFET N CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
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TD62064AFG,S,EL TD62064AFG,S,EL Toshiba Semiconductor and Storage TD62064AP%2CAF.pdf Description: IC TRANSCEIVER 4/0 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 4/0
Supplier Device Package: 16-HSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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1SS398TE85LF 1SS398TE85LF Toshiba Semiconductor and Storage 1SS398_datasheet_en_20210625.pdf?did=3389&prodName=1SS398 Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
Mindestbestellmenge: 3000
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1SS196(TE85L,F) 1SS196(TE85L,F) Toshiba Semiconductor and Storage 1SS196_datasheet_en_20210625.pdf?did=3274&prodName=1SS196 Description: DIODE STANDARD 80V 100MA SC593
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB62213AFTG,8,EL docget.jsp?did=22890&prodName=TB62213AFTG
TB62213AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 1985 Stücke:
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TB62213AFTG,8,EL docget.jsp?did=22890&prodName=TB62213AFTG
TB62213AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62214AFTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62214AFG
TB62214AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3372 Stücke:
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TB62214AFTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62214AFG
TB62214AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3372 Stücke:
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TB62215AFTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG
TB62215AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3995 Stücke:
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TB62215AFTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG
TB62215AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 3995 Stücke:
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TB62216FTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62216FTG
TB62216FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Produkt ist nicht verfügbar
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TB62216FTG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62216FTG
TB62216FTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
Produkt ist nicht verfügbar
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TB62218AFTG,8,EL docget.jsp?did=13039&prodName=TB62218AFTG
TB62218AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2823 Stücke:
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TB62218AFTG,8,EL docget.jsp?did=13039&prodName=TB62218AFTG
TB62218AFTG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48QFN
auf Bestellung 2823 Stücke:
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TB6575FNG(O,C,8,EL DST_TB6575FNG-TDE_EN_12013.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 24SSOP
auf Bestellung 4997 Stücke:
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TB6575FNG(O,C,8,EL DST_TB6575FNG-TDE_EN_12013.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 24SSOP
auf Bestellung 4997 Stücke:
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TB62208FG,8,EL docget.jsp?did=7125&prodName=TB62208FG
TB62208FG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPLR 4.5-5.5V 28HSOP
Produkt ist nicht verfügbar
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TB62208FNG,C8,EL docget.jsp?type=datasheet&lang=en&pid=TB62208FNG
TB62208FNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 780 Stücke:
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TB62208FNG,C8,EL docget.jsp?type=datasheet&lang=en&pid=TB62208FNG
TB62208FNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
Produkt ist nicht verfügbar
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TB62212FNG,C8,EL TB62212FNG.pdf
TB62212FNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62212FTAG,C8,EL TB62212FTAG_datasheet_en_20141001.pdf?did=6255&prodName=TB62212FTAG
TB62212FTAG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPLR 4.5-5.5V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 6159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.59 EUR
10+4.13 EUR
25+3.9 EUR
100+3.32 EUR
250+3.12 EUR
500+2.73 EUR
1000+2.26 EUR
Mindestbestellmenge: 4
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TB62213AFNG,C8,EL docget.jsp?did=22889&prodName=TB62213AFNG
TB62213AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 2000 Stücke:
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TB62213AFNG,C8,EL docget.jsp?did=22889&prodName=TB62213AFNG
TB62213AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62214AFG,8,EL TB62214AFG_Summary.pdf
TB62214AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 28HSOP
Packaging: Cut Tape (CT)
Package / Case: 28-BSOP (0.346", 8.80mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 28-HSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB62214AFNG,C8,EL docget.jsp?did=13036&prodName=TB62214AFNG
TB62214AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-HTSSOP
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Part Status: Active
auf Bestellung 3032 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
10+4.52 EUR
25+4.26 EUR
100+3.63 EUR
250+3.41 EUR
500+2.98 EUR
Mindestbestellmenge: 4
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TB62215AFG,8,EL TB62215AFG_Summary.pdf
TB62215AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
auf Bestellung 1528 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62215AFG,8,EL TB62215AFG_Summary.pdf
TB62215AFG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
auf Bestellung 1528 Stücke:
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TB62215AFNG,C8,EL docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG
TB62215AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 983 Stücke:
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TB62215AFNG,C8,EL docget.jsp?type=datasheet&lang=en&pid=TB62215AFTG
TB62215AFNG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48HTSSOP
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
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TB62216FG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62216FG
TB62216FG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB62216FG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62216FG
TB62216FG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SZU04FUTF
TC7SZU04FUTF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 16mA, 16mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC74LVX373FW 886.pdf
TC74LVX373FW
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-SOL
auf Bestellung 2360 Stücke:
Lieferzeit 10-14 Tag (e)
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TK10A60W,S4VX docget.jsp?did=13486&prodName=TK10A60W
TK10A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
Mindestbestellmenge: 7
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TK16A60W,S4VX docget.jsp?did=13490&prodName=TK16A60W
TK16A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.33 EUR
Mindestbestellmenge: 4
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TK56E12N1,S1X docget.jsp?did=13465&prodName=TK56E12N1
TK56E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 56A TO-220
Produkt ist nicht verfügbar
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TK72E12N1,S1X docget.jsp?did=13466&prodName=TK72E12N1
TK72E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 72A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.6 EUR
Mindestbestellmenge: 4
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TPH1400ANH,L1Q docget.jsp?did=12774&prodName=TPH1400ANH
TPH1400ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.81 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPH8R80ANH,L1Q TPH8R80ANH_datasheet_en_20140218.pdf?did=12776&prodName=TPH8R80ANH
TPH8R80ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.2 EUR
Mindestbestellmenge: 5000
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TPN22006NH,LQ TPN22006NH_datasheet_en_20140107.pdf?did=13666&prodName=TPN22006NH
TPN22006NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.68 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TPN30008NH,LQ TPN30008NH_datasheet_en_20140218.pdf?did=13035&prodName=TPN30008NH
TPN30008NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN3300ANH,LQ TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH
TPN3300ANH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH1400ANH,L1Q docget.jsp?did=12774&prodName=TPH1400ANH
TPH1400ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 9733 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+1.96 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.99 EUR
Mindestbestellmenge: 6
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TPH8R80ANH,L1Q TPH8R80ANH_datasheet_en_20140218.pdf?did=12776&prodName=TPH8R80ANH
TPH8R80ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 29260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+2.31 EUR
100+1.64 EUR
500+1.39 EUR
1000+1.26 EUR
2000+1.23 EUR
Mindestbestellmenge: 7
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TPN22006NH,LQ TPN22006NH_datasheet_en_20140107.pdf?did=13666&prodName=TPN22006NH
TPN22006NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 5722 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
13+1.4 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.77 EUR
Mindestbestellmenge: 9
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TPN30008NH,LQ TPN30008NH_datasheet_en_20140218.pdf?did=13035&prodName=TPN30008NH
TPN30008NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
auf Bestellung 2735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
13+1.42 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
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TPN3300ANH,LQ TPN3300ANH_datasheet_en_20140218.pdf?did=13091&prodName=TPN3300ANH
TPN3300ANH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 4306 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.29 EUR
13+1.44 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TK42E12N1,S1X docget.jsp?did=13464&prodName=TK42E12N1
TK42E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 88A TO-220
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK6A60W,S4VX docget.jsp?did=13527&prodName=TK6A60W
TK6A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPN2R503NC,L1Q docget.jsp?did=13638&prodName=TPN2R503NC
TPN2R503NC,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 40A 8TSON-ADV
Produkt ist nicht verfügbar
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TPN2R503NC,L1Q docget.jsp?did=13638&prodName=TPN2R503NC
TPN2R503NC,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 40A 8TSON-ADV
Produkt ist nicht verfügbar
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TK31J60W5,S1VQ docget.jsp?type=datasheet&lang=en&pid=TK31J60W5
TK31J60W5,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO-3P(N)
Produkt ist nicht verfügbar
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TK39J60W,S1VQ docget.jsp?did=13496&prodName=TK39J60W
TK39J60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.87 EUR
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TK39J60W5,S1VQ TK39J60W5_datasheet_en_20131226.pdf?did=13749&prodName=TK39J60W5
TK39J60W5,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.69 EUR
25+14.92 EUR
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TK31E60W,S1VX TK31E60W_datasheet_en_20131226.pdf?did=13524&prodName=TK31E60W
TK31E60W,S1VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.06 EUR
Mindestbestellmenge: 2
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TK31J60W,S1VQ docget.jsp?did=13525&prodName=TK31J60W
TK31J60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO3P
Produkt ist nicht verfügbar
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TK7P60W,RVQ docget.jsp?did=13578&prodName=TK7P60W
TK7P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
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TK7P60W,RVQ docget.jsp?did=13578&prodName=TK7P60W
TK7P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 1986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.47 EUR
10+2.05 EUR
100+1.98 EUR
Mindestbestellmenge: 4
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TK32E12N1,S1X docget.jsp?did=13460&prodName=TK32E12N1
TK32E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.57 EUR
50+1.79 EUR
Mindestbestellmenge: 5
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TPN6R303NC,LQ docget.jsp?did=13640&prodName=TPN6R303NC
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
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TPN6R303NC,LQ docget.jsp?did=13640&prodName=TPN6R303NC
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
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TD62064AFG,S,EL TD62064AP%2CAF.pdf
TD62064AFG,S,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSCEIVER 4/0 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 4/0
Supplier Device Package: 16-HSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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1SS398TE85LF 1SS398_datasheet_en_20210625.pdf?did=3389&prodName=1SS398
1SS398TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
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1SS196(TE85L,F) 1SS196_datasheet_en_20210625.pdf?did=3274&prodName=1SS196
1SS196(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SC593
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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