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TB62216FG,8,EL TB62216FG,8,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62216FG Description: IC MOTOR DRIVER PAR 28HSOP
Produkt ist nicht verfügbar
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TC7SZU04FUTF TC7SZU04FUTF Toshiba Semiconductor and Storage Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 16mA, 16mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC74LVX373FW TC74LVX373FW Toshiba Semiconductor and Storage 886.pdf Description: IC LATCH OCTAL D-TYPE 20-SOL
auf Bestellung 2360 Stücke:
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TK10A60W,S4VX TK10A60W,S4VX Toshiba Semiconductor and Storage docget.jsp?did=13486&prodName=TK10A60W Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.27 EUR
50+3.69 EUR
100+3.33 EUR
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TK16A60W,S4VX TK16A60W,S4VX Toshiba Semiconductor and Storage docget.jsp?did=13490&prodName=TK16A60W Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.69 EUR
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TK56E12N1,S1X TK56E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13465&prodName=TK56E12N1 Description: MOSFET N CH 120V 56A TO-220
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TK72E12N1,S1X TK72E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13466&prodName=TK72E12N1 Description: MOSFET N CH 120V 72A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
auf Bestellung 41 Stücke:
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4+6.66 EUR
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TPH1400ANH,L1Q TPH1400ANH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=12774&prodName=TPH1400ANH Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 10000 Stücke:
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5000+0.96 EUR
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TPH8R80ANH,L1Q TPH8R80ANH,L1Q Toshiba Semiconductor and Storage TPH8R80ANH_datasheet_en_20140218.pdf?did=12776&prodName=TPH8R80ANH Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 25000 Stücke:
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5000+1.43 EUR
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TPN22006NH,LQ TPN22006NH,LQ Toshiba Semiconductor and Storage TPN22006NH_datasheet_en_20140107.pdf?did=13666&prodName=TPN22006NH Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.81 EUR
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TPN30008NH,LQ TPN30008NH,LQ Toshiba Semiconductor and Storage TPN30008NH_datasheet_en_20140218.pdf?did=13035&prodName=TPN30008NH Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
Produkt ist nicht verfügbar
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TPN3300ANH,LQ TPN3300ANH,LQ Toshiba Semiconductor and Storage docget.jsp?did=13091&prodName=TPN3300ANH Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.86 EUR
6000+0.8 EUR
9000+0.76 EUR
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TPH1400ANH,L1Q TPH1400ANH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=12774&prodName=TPH1400ANH Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 14651 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.92 EUR
10+2.5 EUR
100+1.69 EUR
500+1.34 EUR
1000+1.24 EUR
2000+1.18 EUR
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TPH8R80ANH,L1Q TPH8R80ANH,L1Q Toshiba Semiconductor and Storage TPH8R80ANH_datasheet_en_20140218.pdf?did=12776&prodName=TPH8R80ANH Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 29260 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.37 EUR
10+2.75 EUR
100+1.95 EUR
500+1.65 EUR
1000+1.5 EUR
2000+1.46 EUR
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TPN22006NH,LQ TPN22006NH,LQ Toshiba Semiconductor and Storage TPN22006NH_datasheet_en_20140107.pdf?did=13666&prodName=TPN22006NH Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 5722 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.37 EUR
13+1.67 EUR
100+1.29 EUR
500+1.01 EUR
1000+0.92 EUR
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TPN30008NH,LQ TPN30008NH,LQ Toshiba Semiconductor and Storage TPN30008NH_datasheet_en_20140218.pdf?did=13035&prodName=TPN30008NH Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
auf Bestellung 2735 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.7 EUR
13+1.69 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.8 EUR
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TPN3300ANH,LQ TPN3300ANH,LQ Toshiba Semiconductor and Storage docget.jsp?did=13091&prodName=TPN3300ANH Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 10179 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.19 EUR
11+2.01 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.96 EUR
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TK42E12N1,S1X TK42E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13464&prodName=TK42E12N1 Description: MOSFET N CH 120V 88A TO-220
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TK6A60W,S4VX TK6A60W,S4VX Toshiba Semiconductor and Storage docget.jsp?did=13527&prodName=TK6A60W Description: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.15 EUR
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TPN2R503NC,L1Q TPN2R503NC,L1Q Toshiba Semiconductor and Storage docget.jsp?did=13638&prodName=TPN2R503NC Description: MOSFET N CH 30V 40A 8TSON-ADV
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TPN2R503NC,L1Q TPN2R503NC,L1Q Toshiba Semiconductor and Storage docget.jsp?did=13638&prodName=TPN2R503NC Description: MOSFET N CH 30V 40A 8TSON-ADV
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TK31J60W5,S1VQ TK31J60W5,S1VQ Toshiba Semiconductor and Storage docget.jsp?did=13748&prodName=TK31J60W5 Description: MOSFET N-CH 600V 30.8A TO3P
auf Bestellung 22 Stücke:
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2+20.37 EUR
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TK39J60W,S1VQ TK39J60W,S1VQ Toshiba Semiconductor and Storage TK39J60W_datasheet_en_20131226.pdf?did=13496&prodName=TK39J60W Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.07 EUR
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TK39J60W5,S1VQ TK39J60W5,S1VQ Toshiba Semiconductor and Storage docget.jsp?did=13749&prodName=TK39J60W5 Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 25 Stücke:
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1+24.3 EUR
25+14.97 EUR
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TK31E60W,S1VX TK31E60W,S1VX Toshiba Semiconductor and Storage docget.jsp?did=13524&prodName=TK31E60W Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
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TK31J60W,S1VQ TK31J60W,S1VQ Toshiba Semiconductor and Storage TK31J60W_datasheet_en_20131226.pdf?did=13525&prodName=TK31J60W Description: MOSFET N-CH 600V 30.8A TO3P
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TK7P60W,RVQ TK7P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13578&prodName=TK7P60W Description: MOSFET N CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
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TK7P60W,RVQ TK7P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13578&prodName=TK7P60W Description: MOSFET N CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
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TK32E12N1,S1X TK32E12N1,S1X Toshiba Semiconductor and Storage docget.jsp?did=13460&prodName=TK32E12N1 Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
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TPN6R303NC,LQ Toshiba Semiconductor and Storage docget.jsp?did=13640&prodName=TPN6R303NC Description: MOSFET N CH 30V 20A 8TSON-ADV
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TPN6R303NC,LQ Toshiba Semiconductor and Storage docget.jsp?did=13640&prodName=TPN6R303NC Description: MOSFET N CH 30V 20A 8TSON-ADV
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1SS398TE85LF 1SS398TE85LF Toshiba Semiconductor and Storage 1SS398_datasheet_en_20210625.pdf?did=3389&prodName=1SS398 Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
auf Bestellung 57000 Stücke:
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3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.21 EUR
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1SS196(TE85L,F) 1SS196(TE85L,F) Toshiba Semiconductor and Storage 1SS196_datasheet_en_20210625.pdf?did=3274&prodName=1SS196 Description: DIODE STANDARD 80V 100MA SC593
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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TK16J60W,S1VQ TK16J60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK16J60W Description: MOSFET N CH 600V 15.8A TO-3P(N)
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TK10E60W,S1VX TK10E60W,S1VX Toshiba Semiconductor and Storage docget.jsp?did=13500&prodName=TK10E60W Description: MOSFET N-CH 600V 9.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TK12E60W,S1VX TK12E60W,S1VX Toshiba Semiconductor and Storage TK12E60W_datasheet_en_20131225.pdf?did=13505&prodName=TK12E60W Description: MOSFET N CH 600V 11.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 50 Stücke:
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TK16E60W,S1VX TK16E60W,S1VX Toshiba Semiconductor and Storage docget.jsp?did=13516&prodName=TK16E60W Description: MOSFET N-CH 600V 15.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 31 Stücke:
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4+6.41 EUR
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TK5A60W,S4VX TK5A60W,S4VX Toshiba Semiconductor and Storage docget.jsp_did%3D13585%26prodname%3Dtk5a60w.pdf Description: MOSFET N-CH 600V 5.4A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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TK62J60W,S1VQ TK62J60W,S1VQ Toshiba Semiconductor and Storage docget.jsp?did=13559&prodName=TK62J60W Description: MOSFET N-CH 600V 61.8A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 30.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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TPN14006NH,L1Q TPN14006NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=13721&prodName=TPN14006NH Description: MOSFET N CH 60V 13A 8TSON-ADV
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TK7A60W,S4VX TK7A60W,S4VX Toshiba Semiconductor and Storage TK7A60W_datasheet_en_20140105.pdf?did=13589&prodName=TK7A60W Description: MOSFET N-CH 600V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 40 Stücke:
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5+5.02 EUR
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TK8A60W,S4VX TK8A60W,S4VX Toshiba Semiconductor and Storage TK8A60W_datasheet_en_20140105.pdf?did=13674&prodName=TK8A60W Description: MOSFET N-CH 600V 8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
auf Bestellung 39 Stücke:
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5+5.19 EUR
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TPH12008NH,L1Q TPH12008NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=12771&prodName=TPH12008NH Description: MOSFET N-CH 80V 24A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 40 V
auf Bestellung 3777 Stücke:
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12+1.8 EUR
100+1.2 EUR
500+0.94 EUR
1000+0.86 EUR
2000+0.83 EUR
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TPH12008NH,L1Q TPH12008NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=12771&prodName=TPH12008NH Description: MOSFET N-CH 80V 24A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 40 V
Produkt ist nicht verfügbar
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TPH8R008NH,L1Q TPH8R008NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=12775&prodName=TPH8R008NH Description: MOSFET N-CH 80V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 40 V
auf Bestellung 5000 Stücke:
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TPH8R008NH,L1Q TPH8R008NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=12775&prodName=TPH8R008NH Description: MOSFET N-CH 80V 34A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 40 V
auf Bestellung 6754 Stücke:
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100+1.86 EUR
500+1.49 EUR
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TC7SZ02FU(T5L,JF,T TC7SZ02FU(T5L,JF,T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SZ02FU Description: IC GATE NOR 1CH 2-INP SMV
auf Bestellung 2670 Stücke:
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TC7SZ02FU(T5L,JF,T TC7SZ02FU(T5L,JF,T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SZ02FU Description: IC GATE NOR 1CH 2-INP SMV
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TC7SZ02FU(T5L,JF,T TC7SZ02FU(T5L,JF,T Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SZ02FU Description: IC GATE NOR 1CH 2-INP SMV
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TC7SZ00F,LJ(CT TC7SZ00F,LJ(CT Toshiba Semiconductor and Storage TC7SZ00FU_datasheet_en_20170517.pdf?did=30322&prodName=TC7SZ00FU Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SZ00F,LJ(CT TC7SZ00F,LJ(CT Toshiba Semiconductor and Storage TC7SZ00FU_datasheet_en_20170517.pdf?did=30322&prodName=TC7SZ00FU Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 2492 Stücke:
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100+0.25 EUR
250+0.2 EUR
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CBS05F30(TPL3) CBS05F30(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CBS05F30 Description: DIODE SCHOTTKY 30V 500MA CST2B
auf Bestellung 10000 Stücke:
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CBS05F30(TPL3) CBS05F30(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CBS05F30 Description: DIODE SCHOTTKY 30V 500MA CST2B
auf Bestellung 7496 Stücke:
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CBS05F30(TPL3) CBS05F30(TPL3) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=CBS05F30 Description: DIODE SCHOTTKY 30V 500MA CST2B
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SSM3J331R,LF SSM3J331R,LF Toshiba Semiconductor and Storage docget.jsp?did=13019&prodName=SSM3J331R Description: MOSFET P-CH 20V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 75000 Stücke:
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3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
15000+0.13 EUR
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SSM3J331R,LF SSM3J331R,LF Toshiba Semiconductor and Storage docget.jsp?did=13019&prodName=SSM3J331R Description: MOSFET P-CH 20V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 76889 Stücke:
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27+0.8 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
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SSM6J213FE(TE85L,F SSM6J213FE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=6624&prodName=SSM6J213FE Description: MOSFET P CH 20V 2.6A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J414TU,LF SSM6J414TU,LF Toshiba Semiconductor and Storage docget.jsp?did=13022&prodName=SSM6J414TU Description: MOSFET P CH 20V 6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 2453 Stücke:
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20+1.07 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
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SSM6J215FE(TE85L,F SSM6J215FE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?did=13425&prodName=SSM6J215FE Description: MOSFET P CH 20V 3.4A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
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4000+0.2 EUR
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SSM6J505NU,LF SSM6J505NU,LF Toshiba Semiconductor and Storage SSM6J505NU_datasheet_en_20210917.pdf?did=13456&prodName=SSM6J505NU Description: MOSFET P-CH 12V 12A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
auf Bestellung 2640 Stücke:
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27+0.81 EUR
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500+0.44 EUR
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TB62216FG,8,EL docget.jsp?type=datasheet&lang=en&pid=TB62216FG
TB62216FG,8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 28HSOP
Produkt ist nicht verfügbar
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TC7SZU04FUTF
TC7SZU04FUTF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 16mA, 16mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC74LVX373FW 886.pdf
TC74LVX373FW
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-SOL
auf Bestellung 2360 Stücke:
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TK10A60W,S4VX docget.jsp?did=13486&prodName=TK10A60W
TK10A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 112 Stücke:
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AnzahlPrivatkunde
3+7.27 EUR
50+3.69 EUR
100+3.33 EUR
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TK16A60W,S4VX docget.jsp?did=13490&prodName=TK16A60W
TK16A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 19 Stücke:
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3+7.69 EUR
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TK56E12N1,S1X docget.jsp?did=13465&prodName=TK56E12N1
TK56E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 56A TO-220
Produkt ist nicht verfügbar
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TK72E12N1,S1X docget.jsp?did=13466&prodName=TK72E12N1
TK72E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 72A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
auf Bestellung 41 Stücke:
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4+6.66 EUR
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TPH1400ANH,L1Q docget.jsp?did=12774&prodName=TPH1400ANH
TPH1400ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
5000+0.96 EUR
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TPH8R80ANH,L1Q TPH8R80ANH_datasheet_en_20140218.pdf?did=12776&prodName=TPH8R80ANH
TPH8R80ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 25000 Stücke:
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AnzahlPrivatkunde
5000+1.43 EUR
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TPN22006NH,LQ TPN22006NH_datasheet_en_20140107.pdf?did=13666&prodName=TPN22006NH
TPN22006NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.81 EUR
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TPN30008NH,LQ TPN30008NH_datasheet_en_20140218.pdf?did=13035&prodName=TPN30008NH
TPN30008NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
Produkt ist nicht verfügbar
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TPN3300ANH,LQ docget.jsp?did=13091&prodName=TPN3300ANH
TPN3300ANH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.86 EUR
6000+0.8 EUR
9000+0.76 EUR
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TPH1400ANH,L1Q docget.jsp?did=12774&prodName=TPH1400ANH
TPH1400ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 24A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 50 V
auf Bestellung 14651 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.92 EUR
10+2.5 EUR
100+1.69 EUR
500+1.34 EUR
1000+1.24 EUR
2000+1.18 EUR
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TPH8R80ANH,L1Q TPH8R80ANH_datasheet_en_20140218.pdf?did=12776&prodName=TPH8R80ANH
TPH8R80ANH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 32A 8-SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 29260 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.37 EUR
10+2.75 EUR
100+1.95 EUR
500+1.65 EUR
1000+1.5 EUR
2000+1.46 EUR
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TPN22006NH,LQ TPN22006NH_datasheet_en_20140107.pdf?did=13666&prodName=TPN22006NH
TPN22006NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 5722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
13+1.67 EUR
100+1.29 EUR
500+1.01 EUR
1000+0.92 EUR
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TPN30008NH,LQ TPN30008NH_datasheet_en_20140218.pdf?did=13035&prodName=TPN30008NH
TPN30008NH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 9.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.8A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 40 V
auf Bestellung 2735 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.7 EUR
13+1.69 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.8 EUR
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TPN3300ANH,LQ docget.jsp?did=13091&prodName=TPN3300ANH
TPN3300ANH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 9.4A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.7A, 10V
Power Dissipation (Max): 700mW (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
auf Bestellung 10179 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.19 EUR
11+2.01 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.96 EUR
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TK42E12N1,S1X docget.jsp?did=13464&prodName=TK42E12N1
TK42E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 88A TO-220
Produkt ist nicht verfügbar
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TK6A60W,S4VX docget.jsp?did=13527&prodName=TK6A60W
TK6A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 6.2A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.15 EUR
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TPN2R503NC,L1Q docget.jsp?did=13638&prodName=TPN2R503NC
TPN2R503NC,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 40A 8TSON-ADV
Produkt ist nicht verfügbar
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TPN2R503NC,L1Q docget.jsp?did=13638&prodName=TPN2R503NC
TPN2R503NC,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 40A 8TSON-ADV
Produkt ist nicht verfügbar
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TK31J60W5,S1VQ docget.jsp?did=13748&prodName=TK31J60W5
TK31J60W5,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO3P
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.37 EUR
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TK39J60W,S1VQ TK39J60W_datasheet_en_20131226.pdf?did=13496&prodName=TK39J60W
TK39J60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
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1+22.07 EUR
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TK39J60W5,S1VQ docget.jsp?did=13749&prodName=TK39J60W5
TK39J60W5,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
Supplier Device Package: TO-3P(N)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.3 EUR
25+14.97 EUR
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TK31E60W,S1VX docget.jsp?did=13524&prodName=TK31E60W
TK31E60W,S1VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
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TK31J60W,S1VQ TK31J60W_datasheet_en_20131226.pdf?did=13525&prodName=TK31J60W
TK31J60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO3P
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.79 EUR
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TK7P60W,RVQ docget.jsp?did=13578&prodName=TK7P60W
TK7P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
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TK7P60W,RVQ docget.jsp?did=13578&prodName=TK7P60W
TK7P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 1986 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.32 EUR
10+2.44 EUR
100+2.36 EUR
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TK32E12N1,S1X docget.jsp?did=13460&prodName=TK32E12N1
TK32E12N1,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 120V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.25 EUR
50+2.13 EUR
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TPN6R303NC,LQ docget.jsp?did=13640&prodName=TPN6R303NC
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TPN6R303NC,LQ docget.jsp?did=13640&prodName=TPN6R303NC
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 30V 20A 8TSON-ADV
Produkt ist nicht verfügbar
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1SS398TE85LF 1SS398_datasheet_en_20210625.pdf?did=3389&prodName=1SS398
1SS398TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 400V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 400 V
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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1SS196(TE85L,F) 1SS196_datasheet_en_20210625.pdf?did=3274&prodName=1SS196
1SS196(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SC593
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-59-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TK16J60W,S1VQ docget.jsp?type=datasheet&lang=en&pid=TK16J60W
TK16J60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 15.8A TO-3P(N)
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
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TK10E60W,S1VX docget.jsp?did=13500&prodName=TK10E60W
TK10E60W,S1VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TK12E60W,S1VX TK12E60W_datasheet_en_20131225.pdf?did=13505&prodName=TK12E60W
TK12E60W,S1VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 11.5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.76 EUR
50+3.46 EUR
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TK16E60W,S1VX docget.jsp?did=13516&prodName=TK16E60W
TK16E60W,S1VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.41 EUR
Mindestbestellmenge: 4 Stücke
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TK5A60W,S4VX docget.jsp_did%3D13585%26prodname%3Dtk5a60w.pdf
TK5A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 5.4A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.7V @ 270µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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TK62J60W,S1VQ docget.jsp?did=13559&prodName=TK62J60W
TK62J60W,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 3.7V @ 3.1mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 30.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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TPN14006NH,L1Q docget.jsp?did=13721&prodName=TPN14006NH
TPN14006NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 60V 13A 8TSON-ADV
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TK7A60W,S4VX TK7A60W_datasheet_en_20140105.pdf?did=13589&prodName=TK7A60W
TK7A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 350µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.02 EUR
Mindestbestellmenge: 5 Stücke
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TK8A60W,S4VX TK8A60W_datasheet_en_20140105.pdf?did=13674&prodName=TK8A60W
TK8A60W,S4VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
auf Bestellung 39 Stücke:
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TPH12008NH,L1Q docget.jsp?did=12771&prodName=TPH12008NH
TPH12008NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 24A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 40 V
auf Bestellung 3777 Stücke:
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8+2.84 EUR
12+1.8 EUR
100+1.2 EUR
500+0.94 EUR
1000+0.86 EUR
2000+0.83 EUR
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TPH12008NH,L1Q docget.jsp?did=12771&prodName=TPH12008NH
TPH12008NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 24A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12A, 10V
Power Dissipation (Max): 1.6W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 40 V
Produkt ist nicht verfügbar
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TPH8R008NH,L1Q docget.jsp?did=12775&prodName=TPH8R008NH
TPH8R008NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 40 V
auf Bestellung 5000 Stücke:
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5000+1.19 EUR
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TPH8R008NH,L1Q docget.jsp?did=12775&prodName=TPH8R008NH
TPH8R008NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 34A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 17A, 10V
Power Dissipation (Max): 1.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 40 V
auf Bestellung 6754 Stücke:
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10+2.73 EUR
100+1.86 EUR
500+1.49 EUR
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TC7SZ02FU(T5L,JF,T docget.jsp?type=datasheet&lang=en&pid=TC7SZ02FU
TC7SZ02FU(T5L,JF,T
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
auf Bestellung 2670 Stücke:
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TC7SZ02FU(T5L,JF,T docget.jsp?type=datasheet&lang=en&pid=TC7SZ02FU
TC7SZ02FU(T5L,JF,T
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
Produkt ist nicht verfügbar
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TC7SZ02FU(T5L,JF,T docget.jsp?type=datasheet&lang=en&pid=TC7SZ02FU
TC7SZ02FU(T5L,JF,T
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP SMV
auf Bestellung 3000 Stücke:
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TC7SZ00F,LJ(CT TC7SZ00FU_datasheet_en_20170517.pdf?did=30322&prodName=TC7SZ00FU
TC7SZ00F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SZ00F,LJ(CT TC7SZ00FU_datasheet_en_20170517.pdf?did=30322&prodName=TC7SZ00FU
TC7SZ00F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 2492 Stücke:
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32+0.67 EUR
53+0.4 EUR
64+0.33 EUR
100+0.25 EUR
250+0.2 EUR
500+0.18 EUR
1000+0.15 EUR
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CBS05F30(TPL3) docget.jsp?type=datasheet&lang=en&pid=CBS05F30
CBS05F30(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA CST2B
auf Bestellung 10000 Stücke:
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CBS05F30(TPL3) docget.jsp?type=datasheet&lang=en&pid=CBS05F30
CBS05F30(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA CST2B
auf Bestellung 7496 Stücke:
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CBS05F30(TPL3) docget.jsp?type=datasheet&lang=en&pid=CBS05F30
CBS05F30(TPL3)
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA CST2B
Produkt ist nicht verfügbar
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SSM3J331R,LF docget.jsp?did=13019&prodName=SSM3J331R
SSM3J331R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 75000 Stücke:
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3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
15000+0.13 EUR
30000+0.12 EUR
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SSM3J331R,LF docget.jsp?did=13019&prodName=SSM3J331R
SSM3J331R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 76889 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
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SSM6J213FE(TE85L,F docget.jsp?did=6624&prodName=SSM6J213FE
SSM6J213FE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 2.6A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J414TU,LF docget.jsp?did=13022&prodName=SSM6J414TU
SSM6J414TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
auf Bestellung 2453 Stücke:
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20+1.07 EUR
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100+0.43 EUR
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SSM6J215FE(TE85L,F docget.jsp?did=13425&prodName=SSM6J215FE
SSM6J215FE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P CH 20V 3.4A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.2 EUR
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SSM6J505NU,LF SSM6J505NU_datasheet_en_20210917.pdf?did=13456&prodName=SSM6J505NU
SSM6J505NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 12A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
auf Bestellung 2640 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
27+0.81 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.36 EUR
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