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TLP2200(LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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DF2S23P2CTC,L3F DF2S23P2CTC,L3F Toshiba Semiconductor and Storage DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
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10000+0.13 EUR
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DF2S23P2CTC,L3F DF2S23P2CTC,L3F Toshiba Semiconductor and Storage DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
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53+0.39 EUR
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TLP2768A(D4-TP,E TLP2768A(D4-TP,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP2768A(D4,E TLP2768A(D4,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR SO6
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 20MBd
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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TCR3DF24,LM(CT TCR3DF24,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF24 Description: IC REG LINEAR 2.4V 300MA SMV
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TCR3DF24,LM(CT TCR3DF24,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF24 Description: IC REG LINEAR 2.4V 300MA SMV
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SSM3K62TU,LF SSM3K62TU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 800MA UFM
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SSM3K62TU,LF SSM3K62TU,LF Toshiba Semiconductor and Storage Description: MOSFET N-CH 20V 800MA UFM
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SSM3K341TU,LF SSM3K341TU,LF Toshiba Semiconductor and Storage docget.jsp?did=56017&prodName=SSM3K341TU Description: MOSFET N-CH 60V 6A UFM
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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SSM3K341TU,LF SSM3K341TU,LF Toshiba Semiconductor and Storage docget.jsp?did=56017&prodName=SSM3K341TU Description: MOSFET N-CH 60V 6A UFM
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
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TK12P60W,RVQ(S TK12P60W,RVQ(S Toshiba Semiconductor and Storage docget.jsp?did=13511&prodName=TK12P60W Description: MOSFET N-CH 600V 11.5A DPAK
Produkt ist nicht verfügbar
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2SC2712-Y,LXHF 2SC2712-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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2SC2712-Y,LXHF 2SC2712-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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2SC2712-BL,LXHF 2SC2712-BL,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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2SC2712-BL,LXHF 2SC2712-BL,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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2SC2712-GR,LXHF 2SC2712-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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2SC2712-GR,LXHF 2SC2712-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19227&prodName=2SC2712 Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 798 Stücke:
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59+0.36 EUR
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2SA1162-GR,LXHF 2SA1162-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
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3000+0.13 EUR
6000+0.12 EUR
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2SA1162-GR,LXHF 2SA1162-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 9594 Stücke:
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2SA1162-Y,LXHF 2SA1162-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
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3000+0.13 EUR
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2SA1162-Y,LXHF 2SA1162-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 15377 Stücke:
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2SA1162-O,LXHF 2SA1162-O,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
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3000+0.13 EUR
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2SA1162-O,LXHF 2SA1162-O,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19351&prodName=2SA1162 Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
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500+0.18 EUR
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TCR3UF19A,LM(CT TCR3UF19A,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.9V 300MA SMV
Produkt ist nicht verfügbar
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TCR3UF19A,LM(CT TCR3UF19A,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.9V 300MA SMV
Produkt ist nicht verfügbar
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TCR3UF28A,LM(CT TCR3UF28A,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 2.8V 300MA SMV
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3000+0.25 EUR
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TCR3UF28A,LM(CT TCR3UF28A,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 2.8V 300MA SMV
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30+0.7 EUR
33+0.64 EUR
100+0.48 EUR
250+0.44 EUR
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TCR3UF18B,LM(CT TCR3UF18B,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.8V 300MA SMV
Produkt ist nicht verfügbar
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TCR3UF18B,LM(CT TCR3UF18B,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.8V 300MA SMV
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TCR3UF36A,LM(CT TCR3UF36A,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=68764 Description: IC REG LINEAR 3.6V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.6V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.245V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 3000 Stücke:
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3000+0.19 EUR
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TCR3UF36A,LM(CT TCR3UF36A,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=68764 Description: IC REG LINEAR 3.6V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.6V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.245V @ 300mA
Protection Features: Over Current, Over Temperature
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TCR3UF20A,LM(CT TCR3UF20A,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=68764 Description: IC REG LINEAR 2V 300MA SMV
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.412V @ 300mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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TCR3UF20A,LM(CT TCR3UF20A,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=68764 Description: IC REG LINEAR 2V 300MA SMV
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.412V @ 300mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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TC7SB67CFU,LF(CT TC7SB67CFU,LF(CT Toshiba Semiconductor and Storage TC7SB67CFU_datasheet_en_20220907.pdf?did=8403&prodName=TC7SB67CFU Description: IC SWITCH SPST-NOX1 12OHM 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 12Ohm
Supplier Device Package: 5-SSOP
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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TC7SB67CFU,LF(CT TC7SB67CFU,LF(CT Toshiba Semiconductor and Storage TC7SB67CFU_datasheet_en_20220907.pdf?did=8403&prodName=TC7SB67CFU Description: IC SWITCH SPST-NOX1 12OHM 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 12Ohm
Supplier Device Package: 5-SSOP
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
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TLP241B(TP1,F TLP241B(TP1,F Toshiba Semiconductor and Storage TLP241B_datasheet_en_20241011.pdf?did=70089&prodName=TLP241B Description: PHOTORELAY; 100V/2A; DIP4; SMD;
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Produkt ist nicht verfügbar
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TLP241B(TP1,F TLP241B(TP1,F Toshiba Semiconductor and Storage TLP241B_datasheet_en_20241011.pdf?did=70089&prodName=TLP241B Description: PHOTORELAY; 100V/2A; DIP4; SMD;
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
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TK1K0A60F,S4X TK1K0A60F,S4X Toshiba Semiconductor and Storage TK1K0A60F_datasheet_en_20180925.pdf?did=61563&prodName=TK1K0A60F Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 770µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
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1SS422(TE85L,F) 1SS422(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=4400&prodName=1SS422 Description: DIODE ARRAY SCHOTT 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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1SS422(TE85L,F) 1SS422(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=4400&prodName=1SS422 Description: DIODE ARRAY SCHOTT 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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SSM6L14FE(TE85L,F) SSM6L14FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=2366&prodName=SSM6L14FE Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
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SSM6L14FE(TE85L,F) SSM6L14FE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=2366&prodName=SSM6L14FE Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
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TLP3100(TP,F) TLP3100(TP,F) Toshiba Semiconductor and Storage TLP3100_datasheet_en_20190617.pdf?did=12210&prodName=TLP3100 Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2.5 A
Approval Agency: CSA, cUL, UL
Supplier Device Package: 6-SOP (2.54mm)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 50 mOhms
Produkt ist nicht verfügbar
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MUZ6V2,LF MUZ6V2,LF Toshiba Semiconductor and Storage MUZ6V2_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V2 Description: TVS DIODE 6.2VWM 10VC USM
Power - Peak Pulse: 175W
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 6.2V
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
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3000+0.12 EUR
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MUZ6V2,LF MUZ6V2,LF Toshiba Semiconductor and Storage MUZ6V2_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V2 Description: TVS DIODE 6.2VWM 10VC USM
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 175W
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 6.2V
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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RN2101MFV,L3F(CT RN2101MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN2101MFV,L3F(CT RN2101MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
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2SB1375,CLARIONF(M 2SB1375,CLARIONF(M Toshiba Semiconductor and Storage 2SB1375_2006-11-21.pdf Description: TRANS PNP 60V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: TO-220NIS
Frequency - Transition: 9MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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1SS406,H3F 1SS406,H3F Toshiba Semiconductor and Storage docget.jsp?did=22693&prodName=1SS406 Description: DIODE SCHOTTKY 20V 50MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
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3000+0.076 EUR
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1SS406,H3F 1SS406,H3F Toshiba Semiconductor and Storage docget.jsp?did=22693&prodName=1SS406 Description: DIODE SCHOTTKY 20V 50MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
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TLP751(D4-LF1,F) TLP751(D4-LF1,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(D4-LF2,F) TLP751(D4-LF2,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(D4-O-LF2,F) TLP751(D4-O-LF2,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
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TLP751(D4-TP1,F) TLP751(D4-TP1,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(LF2,F) TLP751(LF2,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
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MUZ12V,LF MUZ12V,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ12V Description: TVS DIODE 12VWM 26VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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3000+0.12 EUR
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MUZ12V,LF MUZ12V,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ12V Description: TVS DIODE 12VWM 26VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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500+0.19 EUR
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CUZ12V,H3F CUZ12V,H3F Toshiba Semiconductor and Storage docget.jsp?did=155999&prodName=CUZ12V Description: TVS DIODE 12VWM 26VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CUZ12V,H3F CUZ12V,H3F Toshiba Semiconductor and Storage docget.jsp?did=155999&prodName=CUZ12V Description: TVS DIODE 12VWM 26VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 2172 Stücke:
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117+0.18 EUR
193+0.11 EUR
500+0.1 EUR
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TLP2200(LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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DF2S23P2CTC,L3F DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 10000 Stücke:
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10000+0.13 EUR
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DF2S23P2CTC,L3F DF2S23P2CTC_datasheet_en_20180509.pdf?did=58600&prodName=DF2S23P2CTC
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 21VWM 35.7VC CST2C
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 21V (Max)
Supplier Device Package: CST2C
Unidirectional Channels: 1
Voltage - Breakdown (Min): 21.5V
Voltage - Clamping (Max) @ Ipp: 35.7V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 25934 Stücke:
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36+0.58 EUR
53+0.39 EUR
127+0.17 EUR
500+0.15 EUR
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TLP2768A(D4-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.55V
Data Rate: 20MBd
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 30ns, 30ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 1
Current - Output / Channel: 25 mA
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TLP2768A(D4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR SO6
Current - Output / Channel: 25 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 20MBd
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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TCR3DF24,LM(CT docget.jsp?did=14709&prodName=TCR3DF24
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.4V 300MA SMV
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TCR3DF24,LM(CT docget.jsp?did=14709&prodName=TCR3DF24
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.4V 300MA SMV
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SSM3K62TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA UFM
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3000+0.24 EUR
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SSM3K62TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA UFM
auf Bestellung 7416 Stücke:
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25+0.83 EUR
31+0.68 EUR
100+0.46 EUR
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SSM3K341TU,LF docget.jsp?did=56017&prodName=SSM3K341TU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A UFM
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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3000+0.27 EUR
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SSM3K341TU,LF docget.jsp?did=56017&prodName=SSM3K341TU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A UFM
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 17164 Stücke:
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17+1.26 EUR
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TK12P60W,RVQ(S docget.jsp?did=13511&prodName=TK12P60W
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A DPAK
Produkt ist nicht verfügbar
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2SC2712-Y,LXHF docget.jsp?did=19227&prodName=2SC2712
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
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3000+0.12 EUR
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2SC2712-Y,LXHF docget.jsp?did=19227&prodName=2SC2712
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 6559 Stücke:
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36+0.58 EUR
59+0.36 EUR
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500+0.17 EUR
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2SC2712-BL,LXHF docget.jsp?did=19227&prodName=2SC2712
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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2SC2712-BL,LXHF docget.jsp?did=19227&prodName=2SC2712
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 2822 Stücke:
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36+0.58 EUR
59+0.36 EUR
100+0.23 EUR
500+0.17 EUR
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2SC2712-GR,LXHF docget.jsp?did=19227&prodName=2SC2712
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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2SC2712-GR,LXHF docget.jsp?did=19227&prodName=2SC2712
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
auf Bestellung 798 Stücke:
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36+0.58 EUR
59+0.36 EUR
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2SA1162-GR,LXHF docget.jsp?did=19351&prodName=2SA1162
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.12 EUR
9000+0.12 EUR
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2SA1162-GR,LXHF docget.jsp?did=19351&prodName=2SA1162
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 9594 Stücke:
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AnzahlPrivatkunde
33+0.65 EUR
54+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.17 EUR
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2SA1162-Y,LXHF docget.jsp?did=19351&prodName=2SA1162
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.12 EUR
9000+0.12 EUR
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2SA1162-Y,LXHF docget.jsp?did=19351&prodName=2SA1162
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 15377 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
54+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.17 EUR
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2SA1162-O,LXHF docget.jsp?did=19351&prodName=2SA1162
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
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2SA1162-O,LXHF docget.jsp?did=19351&prodName=2SA1162
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Qualification: AEC-Q101
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TCR3UF19A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 300MA SMV
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TCR3UF19A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.9V 300MA SMV
Produkt ist nicht verfügbar
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TCR3UF28A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 300MA SMV
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TCR3UF28A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 300MA SMV
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TCR3UF18B,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA SMV
Produkt ist nicht verfügbar
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TCR3UF18B,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 300MA SMV
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TCR3UF36A,LM(CT docget.jsp?did=68764
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.6V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.6V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.245V @ 300mA
Protection Features: Over Current, Over Temperature
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TCR3UF36A,LM(CT docget.jsp?did=68764
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.6V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.6V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.245V @ 300mA
Protection Features: Over Current, Over Temperature
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TCR3UF20A,LM(CT docget.jsp?did=68764
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 300MA SMV
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.412V @ 300mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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TCR3UF20A,LM(CT docget.jsp?did=68764
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 300MA SMV
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.412V @ 300mA
PSRR: 70dB (1kHz)
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
auf Bestellung 6037 Stücke:
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TC7SB67CFU,LF(CT TC7SB67CFU_datasheet_en_20220907.pdf?did=8403&prodName=TC7SB67CFU
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NOX1 12OHM 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 12Ohm
Supplier Device Package: 5-SSOP
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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TC7SB67CFU,LF(CT TC7SB67CFU_datasheet_en_20220907.pdf?did=8403&prodName=TC7SB67CFU
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST-NOX1 12OHM 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 12Ohm
Supplier Device Package: 5-SSOP
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
auf Bestellung 2987 Stücke:
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TLP241B(TP1,F TLP241B_datasheet_en_20241011.pdf?did=70089&prodName=TLP241B
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY; 100V/2A; DIP4; SMD;
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Produkt ist nicht verfügbar
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TLP241B(TP1,F TLP241B_datasheet_en_20241011.pdf?did=70089&prodName=TLP241B
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTORELAY; 100V/2A; DIP4; SMD;
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 1021 Stücke:
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TK1K0A60F,S4X TK1K0A60F_datasheet_en_20180925.pdf?did=61563&prodName=TK1K0A60F
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.8A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 770µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
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10+2.32 EUR
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1SS422(TE85L,F) docget.jsp?did=4400&prodName=1SS422
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 30V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 59000 Stücke:
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3000+0.17 EUR
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1SS422(TE85L,F) docget.jsp?did=4400&prodName=1SS422
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTT 30V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 59552 Stücke:
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SSM6L14FE(TE85L,F) docget.jsp?did=2366&prodName=SSM6L14FE
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 24000 Stücke:
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4000+0.18 EUR
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SSM6L14FE(TE85L,F) docget.jsp?did=2366&prodName=SSM6L14FE
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 26440 Stücke:
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TLP3100(TP,F) TLP3100_datasheet_en_20190617.pdf?did=12210&prodName=TLP3100
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2.5 A
Approval Agency: CSA, cUL, UL
Supplier Device Package: 6-SOP (2.54mm)
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 50 mOhms
Produkt ist nicht verfügbar
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MUZ6V2,LF MUZ6V2_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V2
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.2VWM 10VC USM
Power - Peak Pulse: 175W
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 6.2V
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
auf Bestellung 6000 Stücke:
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3000+0.12 EUR
6000+0.1 EUR
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MUZ6V2,LF MUZ6V2_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V2
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.2VWM 10VC USM
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 175W
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Voltage - Breakdown (Min): 5.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 6.2V
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
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RN2101MFV,L3F(CT docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN2101MFV,L3F(CT docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 7890 Stücke:
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72+0.3 EUR
113+0.19 EUR
182+0.12 EUR
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2SB1375,CLARIONF(M 2SB1375_2006-11-21.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 60V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: TO-220NIS
Frequency - Transition: 9MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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1SS406,H3F docget.jsp?did=22693&prodName=1SS406
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
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21000+0.057 EUR
30000+0.054 EUR
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1SS406,H3F docget.jsp?did=22693&prodName=1SS406
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 39663 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
90+0.24 EUR
145+0.14 EUR
500+0.11 EUR
1000+0.093 EUR
Mindestbestellmenge: 56 Stücke
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TLP751(D4-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(D4-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(D4-O-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
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TLP751(D4-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MUZ12V,LF docget.jsp?did=69487&prodName=MUZ12V
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MUZ12V,LF docget.jsp?did=69487&prodName=MUZ12V
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5999 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
45+0.48 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.13 EUR
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CUZ12V,H3F docget.jsp?did=155999&prodName=CUZ12V
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CUZ12V,H3F docget.jsp?did=155999&prodName=CUZ12V
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 2172 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
117+0.18 EUR
193+0.11 EUR
500+0.1 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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