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RN2101MFV,L3F(CT RN2101MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
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113+0.19 EUR
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1000+0.074 EUR
2000+0.064 EUR
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2SB1375,CLARIONF(M 2SB1375,CLARIONF(M Toshiba Semiconductor and Storage 2SB1375_2006-11-21.pdf Description: TRANS PNP 60V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: TO-220NIS
Frequency - Transition: 9MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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1SS406,H3F 1SS406,H3F Toshiba Semiconductor and Storage docget.jsp?did=22693&prodName=1SS406 Description: DIODE SCHOTTKY 20V 50MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
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1SS406,H3F 1SS406,H3F Toshiba Semiconductor and Storage docget.jsp?did=22693&prodName=1SS406 Description: DIODE SCHOTTKY 20V 50MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
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TLP751(D4-LF1,F) TLP751(D4-LF1,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(D4-LF2,F) TLP751(D4-LF2,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(D4-O-LF2,F) TLP751(D4-O-LF2,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
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TLP751(D4-TP1,F) TLP751(D4-TP1,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(LF2,F) TLP751(LF2,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
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MUZ12V,LF MUZ12V,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ12V Description: TVS DIODE 12VWM 26VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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MUZ12V,LF MUZ12V,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ12V Description: TVS DIODE 12VWM 26VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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CUZ12V,H3F CUZ12V,H3F Toshiba Semiconductor and Storage docget.jsp?did=155999&prodName=CUZ12V Description: TVS DIODE 12VWM 26VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
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CUZ12V,H3F CUZ12V,H3F Toshiba Semiconductor and Storage docget.jsp?did=155999&prodName=CUZ12V Description: TVS DIODE 12VWM 26VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
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CEZ12V,L3F CEZ12V,L3F Toshiba Semiconductor and Storage docget.jsp?did=155995&prodName=CEZ12V Description: TVS DIODE 12VWM 26VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 44pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
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CEZ12V,L3F CEZ12V,L3F Toshiba Semiconductor and Storage docget.jsp?did=155995&prodName=CEZ12V Description: TVS DIODE 12VWM 26VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 44pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
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MSZ12V,LF MSZ12V,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ12V Description: TVS DIODE 12VWM 26VC SMINI
Produkt ist nicht verfügbar
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MSZ12V,LF MSZ12V,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ12V Description: TVS DIODE 12VWM 26VC SMINI
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XPH3R114MC,L1XHQ XPH3R114MC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=63639&prodName=XPH3R114MC Description: MOSFET P-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
Qualification: AEC-Q101
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XPH3R114MC,L1XHQ XPH3R114MC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=63639&prodName=XPH3R114MC Description: MOSFET P-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
Qualification: AEC-Q101
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TPH1R306PL1,LQ TPH1R306PL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69026&prodName=TPH1R306PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Produkt ist nicht verfügbar
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TPH1R306PL1,LQ TPH1R306PL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69026&prodName=TPH1R306PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
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TCR3UG30A,LF TCR3UG30A,LF Toshiba Semiconductor and Storage TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A Description: IC REG LINEAR 3V 300MA 4WCSP-F
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
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TCR3UG30A,LF TCR3UG30A,LF Toshiba Semiconductor and Storage TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A Description: IC REG LINEAR 3V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
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74VHCT573AFT 74VHCT573AFT Toshiba Semiconductor and Storage docget.jsp?did=14041&prodName=74VHCT573AFT Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 8.5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74VHCT573AFT 74VHCT573AFT Toshiba Semiconductor and Storage docget.jsp?did=14041&prodName=74VHCT573AFT Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 8.5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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TCR5RG29A,LF TCR5RG29A,LF Toshiba Semiconductor and Storage docget.jsp?did=70203&prodName=TCR5RG29A Description: IC REG LINEAR 2.9V 500MA 4-WCSPF
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 2.9V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
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TCR5RG29A,LF TCR5RG29A,LF Toshiba Semiconductor and Storage docget.jsp?did=70203&prodName=TCR5RG29A Description: IC REG LINEAR 2.9V 500MA 4-WCSPF
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 2.9V
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TCR5RG28A,LF TCR5RG28A,LF Toshiba Semiconductor and Storage TCR5RG28A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG28A Description: LDO REG, IOUT: 500MA VOUT: 2.8V
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.21V @ 500mA
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Part Status: Active
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
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TCR5RG28A,LF TCR5RG28A,LF Toshiba Semiconductor and Storage TCR5RG28A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG28A Description: LDO REG, IOUT: 500MA VOUT: 2.8V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.21V @ 500mA
Protection Features: Over Current, Over Temperature
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TCR3DF11,LM(CT TCR3DF11,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF11 Description: IC REG LINEAR 1.1V 300MA SMV
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TCR3DF11,LM(CT TCR3DF11,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF11 Description: IC REG LINEAR 1.1V 300MA SMV
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TPH2R104PL,LQ TPH2R104PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=53315&prodName=TPH2R104PL Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
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TPH2R104PL,LQ TPH2R104PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=53315&prodName=TPH2R104PL Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
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SSM6P40TU,LF SSM6P40TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11195&prodName=SSM6P40TU Description: MOSFET 2P-CH 30V 1.4A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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SSM6P40TU,LF SSM6P40TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11195&prodName=SSM6P40TU Description: MOSFET 2P-CH 30V 1.4A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
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TLP4590A(TP1,F TLP4590A(TP1,F Toshiba Semiconductor and Storage TLP4590A_AF_Mar2021.pdf Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.2 A
Relay Type: Photo-Coupled Relay (Photorelay)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
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TLP4590A(TP1,F TLP4590A(TP1,F Toshiba Semiconductor and Storage TLP4590A_AF_Mar2021.pdf Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.2 A
Relay Type: Photo-Coupled Relay (Photorelay)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 1295 Stücke:
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TPCP8701(TE85L,F,M Toshiba Semiconductor and Storage TPCP8701.pdf Description: TRANS 2NPN 80V 3A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.77W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PS-8
Produkt ist nicht verfügbar
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TC4538BP(N,F) TC4538BP(N,F) Toshiba Semiconductor and Storage docget.jsp?did=20678&prodName=TC4538BP Description: IC MMV 2-CIR 100-NS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 100 ns
Independent Circuits: 2
Current - Output High, Low: 9mA, 15mA
Schmitt Trigger Input: No
Supplier Device Package: 16-DIP
Voltage - Supply: 3 V ~ 18 V
auf Bestellung 916 Stücke:
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TLP3480(TP,E TLP3480(TP,E Toshiba Semiconductor and Storage TLP3480_datasheet_en_20230523.pdf?did=69121&prodName=TLP3480 Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
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TLP3480(TP,E TLP3480(TP,E Toshiba Semiconductor and Storage TLP3480_datasheet_en_20230523.pdf?did=69121&prodName=TLP3480 Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
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DF5A3.3JE,LM DF5A3.3JE,LM Toshiba Semiconductor and Storage docget.jsp?did=22254&prodName=DF5A3.3JE Description: TVS DIODE ESV
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DF5A3.3JE,LM DF5A3.3JE,LM Toshiba Semiconductor and Storage docget.jsp?did=22254&prodName=DF5A3.3JE Description: TVS DIODE ESV
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MUZ6V8,LF MUZ6V8,LF Toshiba Semiconductor and Storage MUZ6V8_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V8 Description: TVS DIODE 6.8VWM 13VC USM
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 180W
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 6.8V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 88pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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MUZ6V8,LF MUZ6V8,LF Toshiba Semiconductor and Storage MUZ6V8_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V8 Description: TVS DIODE 6.8VWM 13VC USM
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 180W
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 6.8V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 88pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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TC7PZ14FU,LJ(CT TC7PZ14FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ14FU_datasheet_en_20171205.pdf?did=14431&prodName=TC7PZ14FU Description: IC INVERT SCHMITT 2CH 2-INP US6
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
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30000+0.086 EUR
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TC7PZ14FU,LJ(CT TC7PZ14FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ14FU_datasheet_en_20171205.pdf?did=14431&prodName=TC7PZ14FU Description: IC INVERT SCHMITT 2CH 2-INP US6
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
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RN1405,LXHF RN1405,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1405 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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3000+0.12 EUR
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RN1405,LXHF RN1405,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1405 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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RN1405,LF RN1405,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1405 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN1405,LF RN1405,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1405 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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152+0.14 EUR
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RN1407,LF RN1407,LF Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1407 Description: TRANS PREBIAS NPN 50V SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1407,LF RN1407,LF Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1407 Description: TRANS PREBIAS NPN 50V SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 245 Stücke:
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63+0.33 EUR
107+0.2 EUR
172+0.12 EUR
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RN1407,LXHF RN1407,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1407 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RN1407,LXHF RN1407,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1407 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5572 Stücke:
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57+0.37 EUR
100+0.23 EUR
500+0.17 EUR
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RN1403,LXHF RN1403,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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RN1403,LXHF RN1403,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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RN1409,LXHF RN1409,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
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3000+0.13 EUR
6000+0.11 EUR
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RN1409,LXHF RN1409,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
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34+0.63 EUR
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RN1404,LXHF RN1404,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1404 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.1 EUR
9000+0.095 EUR
15000+0.089 EUR
21000+0.084 EUR
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RN2101MFV,L3F(CT docget.jsp?did=5883&prodName=RN2101MFV&returnFlg=false
RN2101MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 7890 Stücke:
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AnzahlPrivatkunde
72+0.3 EUR
113+0.19 EUR
182+0.12 EUR
500+0.083 EUR
1000+0.074 EUR
2000+0.064 EUR
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2SB1375,CLARIONF(M 2SB1375_2006-11-21.pdf
2SB1375,CLARIONF(M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 60V 3A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: TO-220NIS
Frequency - Transition: 9MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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1SS406,H3F docget.jsp?did=22693&prodName=1SS406
1SS406,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.076 EUR
6000+0.068 EUR
9000+0.064 EUR
15000+0.06 EUR
21000+0.057 EUR
30000+0.054 EUR
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1SS406,H3F docget.jsp?did=22693&prodName=1SS406
1SS406,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 39663 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
90+0.24 EUR
145+0.14 EUR
500+0.11 EUR
1000+0.093 EUR
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TLP751(D4-LF1,F)
TLP751(D4-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(D4-LF2,F)
TLP751(D4-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(D4-O-LF2,F)
TLP751(D4-O-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP751(D4-TP1,F)
TLP751(D4-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 15V
Turn On / Turn Off Time (Typ): 200ns, 1µs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP751(LF2,F)
TLP751(LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
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MUZ12V,LF docget.jsp?did=69487&prodName=MUZ12V
MUZ12V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.12 EUR
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MUZ12V,LF docget.jsp?did=69487&prodName=MUZ12V
MUZ12V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5999 Stücke:
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32+0.67 EUR
45+0.48 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.13 EUR
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CUZ12V,H3F docget.jsp?did=155999&prodName=CUZ12V
CUZ12V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
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AnzahlPrivatkunde
3000+0.12 EUR
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CUZ12V,H3F docget.jsp?did=155999&prodName=CUZ12V
CUZ12V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 44pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 6070 Stücke:
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38+0.57 EUR
61+0.35 EUR
84+0.25 EUR
100+0.21 EUR
500+0.15 EUR
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CEZ12V,L3F docget.jsp?did=155995&prodName=CEZ12V
CEZ12V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 44pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.093 EUR
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CEZ12V,L3F docget.jsp?did=155995&prodName=CEZ12V
CEZ12V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 44pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: ESC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 26V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
auf Bestellung 20264 Stücke:
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40+0.52 EUR
66+0.32 EUR
92+0.23 EUR
105+0.2 EUR
500+0.14 EUR
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MSZ12V,LF docget.jsp?did=69349&prodName=MSZ12V
MSZ12V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC SMINI
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MSZ12V,LF docget.jsp?did=69349&prodName=MSZ12V
MSZ12V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 26VC SMINI
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
36+0.58 EUR
100+0.31 EUR
500+0.2 EUR
1000+0.14 EUR
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XPH3R114MC,L1XHQ docget.jsp?did=63639&prodName=XPH3R114MC
XPH3R114MC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.26 EUR
15000+1.21 EUR
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XPH3R114MC,L1XHQ docget.jsp?did=63639&prodName=XPH3R114MC
XPH3R114MC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 23763 Stücke:
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10+2.98 EUR
50+2.26 EUR
100+2.02 EUR
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TPH1R306PL1,LQ docget.jsp?did=69026&prodName=TPH1R306PL1
TPH1R306PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Produkt ist nicht verfügbar
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TPH1R306PL1,LQ docget.jsp?did=69026&prodName=TPH1R306PL1
TPH1R306PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 4584 Stücke:
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TCR3UG30A,LF TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A
TCR3UG30A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA 4WCSP-F
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
auf Bestellung 30000 Stücke:
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TCR3UG30A,LF TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A
TCR3UG30A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 32407 Stücke:
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16+1.34 EUR
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74VHCT573AFT docget.jsp?did=14041&prodName=74VHCT573AFT
74VHCT573AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 8.5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74VHCT573AFT docget.jsp?did=14041&prodName=74VHCT573AFT
74VHCT573AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Delay Time - Propagation: 8.5ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1950 Stücke:
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29+0.74 EUR
41+0.51 EUR
46+0.45 EUR
100+0.39 EUR
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1000+0.33 EUR
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TCR5RG29A,LF docget.jsp?did=70203&prodName=TCR5RG29A
TCR5RG29A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 500MA 4-WCSPF
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 2.9V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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5000+0.23 EUR
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TCR5RG29A,LF docget.jsp?did=70203&prodName=TCR5RG29A
TCR5RG29A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 500MA 4-WCSPF
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 2.9V
auf Bestellung 13698 Stücke:
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38+0.57 EUR
55+0.39 EUR
62+0.35 EUR
100+0.3 EUR
250+0.27 EUR
500+0.26 EUR
1000+0.25 EUR
2500+0.24 EUR
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TCR5RG28A,LF TCR5RG28A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG28A
TCR5RG28A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 2.8V
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.21V @ 500mA
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Part Status: Active
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR5RG28A,LF TCR5RG28A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG28A
TCR5RG28A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 2.8V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.21V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 4580 Stücke:
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19+1.11 EUR
24+0.89 EUR
26+0.82 EUR
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500+0.45 EUR
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TCR3DF11,LM(CT docget.jsp?did=14709&prodName=TCR3DF11
TCR3DF11,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 300MA SMV
auf Bestellung 3000 Stücke:
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TCR3DF11,LM(CT docget.jsp?did=14709&prodName=TCR3DF11
TCR3DF11,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 300MA SMV
auf Bestellung 5834 Stücke:
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TPH2R104PL,LQ docget.jsp?did=53315&prodName=TPH2R104PL
TPH2R104PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
auf Bestellung 3000 Stücke:
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3000+0.98 EUR
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TPH2R104PL,LQ docget.jsp?did=53315&prodName=TPH2R104PL
TPH2R104PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
auf Bestellung 7795 Stücke:
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6+3.61 EUR
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SSM6P40TU,LF docget.jsp?did=11195&prodName=SSM6P40TU
SSM6P40TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 1.4A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.27 EUR
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SSM6P40TU,LF docget.jsp?did=11195&prodName=SSM6P40TU
SSM6P40TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 1.4A UF6
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 4072 Stücke:
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18+1.18 EUR
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TLP4590A(TP1,F TLP4590A_AF_Mar2021.pdf
TLP4590A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.2 A
Relay Type: Photo-Coupled Relay (Photorelay)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
Produkt ist nicht verfügbar
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TLP4590A(TP1,F TLP4590A_AF_Mar2021.pdf
TLP4590A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 1.2 A
Relay Type: Photo-Coupled Relay (Photorelay)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 1295 Stücke:
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4+6.91 EUR
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TPCP8701(TE85L,F,M TPCP8701.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 80V 3A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.77W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PS-8
Produkt ist nicht verfügbar
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TC4538BP(N,F) docget.jsp?did=20678&prodName=TC4538BP
TC4538BP(N,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 100-NS 16-DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 100 ns
Independent Circuits: 2
Current - Output High, Low: 9mA, 15mA
Schmitt Trigger Input: No
Supplier Device Package: 16-DIP
Voltage - Supply: 3 V ~ 18 V
auf Bestellung 916 Stücke:
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8+2.67 EUR
11+1.94 EUR
25+1.75 EUR
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TLP3480(TP,E TLP3480_datasheet_en_20230523.pdf?did=69121&prodName=TLP3480
TLP3480(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Produkt ist nicht verfügbar
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TLP3480(TP,E TLP3480_datasheet_en_20230523.pdf?did=69121&prodName=TLP3480
TLP3480(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
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3+10.03 EUR
10+6.96 EUR
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DF5A3.3JE,LM docget.jsp?did=22254&prodName=DF5A3.3JE
DF5A3.3JE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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DF5A3.3JE,LM docget.jsp?did=22254&prodName=DF5A3.3JE
DF5A3.3JE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
auf Bestellung 7879 Stücke:
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MUZ6V8,LF MUZ6V8_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V8
MUZ6V8,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.8VWM 13VC USM
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 180W
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 6.8V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 88pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.13 EUR
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MUZ6V8,LF MUZ6V8_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V8
MUZ6V8,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.8VWM 13VC USM
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 180W
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 6.8V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Capacitance @ Frequency: 88pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5738 Stücke:
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AnzahlPrivatkunde
29+0.74 EUR
35+0.61 EUR
100+0.32 EUR
500+0.21 EUR
1000+0.14 EUR
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TC7PZ14FU,LJ(CT TC7PZ14FU_datasheet_en_20171205.pdf?did=14431&prodName=TC7PZ14FU
TC7PZ14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 2CH 2-INP US6
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
auf Bestellung 45000 Stücke:
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3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
15000+0.094 EUR
21000+0.089 EUR
30000+0.086 EUR
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TC7PZ14FU,LJ(CT TC7PZ14FU_datasheet_en_20171205.pdf?did=14431&prodName=TC7PZ14FU
TC7PZ14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 2CH 2-INP US6
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
auf Bestellung 47448 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
56+0.38 EUR
69+0.31 EUR
100+0.23 EUR
250+0.19 EUR
500+0.17 EUR
1000+0.14 EUR
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RN1405,LXHF docget.jsp?did=18787&prodName=RN1405
RN1405,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
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RN1405,LXHF docget.jsp?did=18787&prodName=RN1405
RN1405,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
59+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
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RN1405,LF docget.jsp?did=18787&prodName=RN1405
RN1405,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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RN1405,LF docget.jsp?did=18787&prodName=RN1405
RN1405,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 2040 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
95+0.23 EUR
152+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
Mindestbestellmenge: 59 Stücke
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RN1407,LF docget.jsp?did=18789&prodName=RN1407
RN1407,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1407,LF docget.jsp?did=18789&prodName=RN1407
RN1407,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 245 Stücke:
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AnzahlPrivatkunde
63+0.33 EUR
107+0.2 EUR
172+0.12 EUR
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RN1407,LXHF docget.jsp?did=18789&prodName=RN1407
RN1407,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RN1407,LXHF docget.jsp?did=18789&prodName=RN1407
RN1407,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5572 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
57+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 35 Stücke
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RN1403,LXHF
RN1403,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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RN1403,LXHF
RN1403,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 35 Stücke
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RN1409,LXHF
RN1409,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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RN1409,LXHF
RN1409,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
Mindestbestellmenge: 34 Stücke
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RN1404,LXHF docget.jsp?did=18787&prodName=RN1404
RN1404,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.1 EUR
9000+0.095 EUR
15000+0.089 EUR
21000+0.084 EUR
Mindestbestellmenge: 3000 Stücke
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