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XPH3R114MC,L1XHQ XPH3R114MC,L1XHQ Toshiba Semiconductor and Storage XPH3R114MC_datasheet_en_20211202.pdf?did=63639&prodName=XPH3R114MC Description: MOSFET P-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.49 EUR
Mindestbestellmenge: 5000
XPH3R114MC,L1XHQ XPH3R114MC,L1XHQ Toshiba Semiconductor and Storage XPH3R114MC_datasheet_en_20211202.pdf?did=63639&prodName=XPH3R114MC Description: MOSFET P-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
auf Bestellung 5920 Stücke:
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6+3.43 EUR
10+ 2.85 EUR
100+ 2.27 EUR
500+ 1.92 EUR
1000+ 1.63 EUR
2000+ 1.55 EUR
Mindestbestellmenge: 6
TPH1R306PL1,LQ TPH1R306PL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69026&prodName=TPH1R306PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 5000 Stücke:
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5000+1.64 EUR
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TPH1R306PL1,LQ TPH1R306PL1,LQ Toshiba Semiconductor and Storage docget.jsp?did=69026&prodName=TPH1R306PL1 Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 7397 Stücke:
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5+3.78 EUR
10+ 3.14 EUR
100+ 2.5 EUR
500+ 2.12 EUR
1000+ 1.79 EUR
2000+ 1.71 EUR
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TCR3UG30A,LF TCR3UG30A,LF Toshiba Semiconductor and Storage TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A Description: IC REG LINEAR 3V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Produkt ist nicht verfügbar
TCR3UG30A,LF TCR3UG30A,LF Toshiba Semiconductor and Storage TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A Description: IC REG LINEAR 3V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 2785 Stücke:
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24+0.74 EUR
29+ 0.61 EUR
32+ 0.56 EUR
100+ 0.41 EUR
250+ 0.38 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
2500+ 0.21 EUR
Mindestbestellmenge: 24
74VHCT573AFT 74VHCT573AFT Toshiba Semiconductor and Storage 74VHCT573AFT_datasheet_en_20160804.pdf?did=14041&prodName=74VHCT573AFT Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 8.5ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
74VHCT573AFT 74VHCT573AFT Toshiba Semiconductor and Storage 74VHCT573AFT_datasheet_en_20160804.pdf?did=14041&prodName=74VHCT573AFT Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 8.5ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 1952 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
26+ 0.69 EUR
28+ 0.64 EUR
100+ 0.51 EUR
250+ 0.48 EUR
500+ 0.4 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
TCR5RG29A,LF TCR5RG29A,LF Toshiba Semiconductor and Storage TCR5RG09A_datasheet_en_20230608.pdf?did=70203&prodName=TCR5RG09A Description: LDO REG, IOUT: 500MA VOUT: 2.9V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 2.9V
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.22 EUR
Mindestbestellmenge: 5000
TCR5RG29A,LF TCR5RG29A,LF Toshiba Semiconductor and Storage TCR5RG09A_datasheet_en_20230608.pdf?did=70203&prodName=TCR5RG09A Description: LDO REG, IOUT: 500MA VOUT: 2.9V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 2.9V
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 9893 Stücke:
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21+0.84 EUR
27+ 0.67 EUR
29+ 0.61 EUR
100+ 0.46 EUR
250+ 0.41 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
2500+ 0.24 EUR
Mindestbestellmenge: 21
TCR5RG28A,LF TCR5RG28A,LF Toshiba Semiconductor and Storage TCR5RG28A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG28A Description: LDO REG, IOUT: 500MA VOUT: 2.8V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.21V @ 500mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR5RG28A,LF TCR5RG28A,LF Toshiba Semiconductor and Storage TCR5RG28A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG28A Description: LDO REG, IOUT: 500MA VOUT: 2.8V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.21V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 4580 Stücke:
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19+0.93 EUR
24+ 0.75 EUR
26+ 0.69 EUR
100+ 0.51 EUR
250+ 0.46 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
2500+ 0.26 EUR
Mindestbestellmenge: 19
TCR3DF11,LM(CT TCR3DF11,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF11 Description: IC REG LINEAR 1.1V 300MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR3DF11,LM(CT TCR3DF11,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF11 Description: IC REG LINEAR 1.1V 300MA SMV
auf Bestellung 5834 Stücke:
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TPH2R104PL,LQ TPH2R104PL,LQ Toshiba Semiconductor and Storage TPH2R104PL_datasheet_en_20160617.pdf?did=53315&prodName=TPH2R104PL Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.75 EUR
Mindestbestellmenge: 3000
TPH2R104PL,LQ TPH2R104PL,LQ Toshiba Semiconductor and Storage TPH2R104PL_datasheet_en_20160617.pdf?did=53315&prodName=TPH2R104PL Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
auf Bestellung 11608 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
12+ 1.49 EUR
100+ 1.16 EUR
500+ 0.98 EUR
1000+ 0.8 EUR
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SSM6P40TU,LF SSM6P40TU,LF Toshiba Semiconductor and Storage SSM6P40TU_datasheet_en_20140301.pdf?did=11195&prodName=SSM6P40TU Description: MOSFET 2P-CH 30V 1.4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: UF6
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.18 EUR
Mindestbestellmenge: 3000
SSM6P40TU,LF SSM6P40TU,LF Toshiba Semiconductor and Storage SSM6P40TU_datasheet_en_20140301.pdf?did=11195&prodName=SSM6P40TU Description: MOSFET 2P-CH 30V 1.4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: UF6
auf Bestellung 11644 Stücke:
Lieferzeit 10-14 Tag (e)
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31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
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TLP4590A(TP1,F TLP4590A(TP1,F Toshiba Semiconductor and Storage TLP4590A_AF_Mar2021.pdf Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: Gull Wing
Load Current: 1.2 A
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+3.38 EUR
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TLP4590A(TP1,F TLP4590A(TP1,F Toshiba Semiconductor and Storage TLP4590A_AF_Mar2021.pdf Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: Gull Wing
Load Current: 1.2 A
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 1805 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.79 EUR
10+ 5.43 EUR
25+ 4.83 EUR
50+ 4.59 EUR
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250+ 3.86 EUR
500+ 3.62 EUR
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TPCP8701(TE85L,F,M Toshiba Semiconductor and Storage TPCP8701.pdf Description: TRANS 2NPN 80V 3A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.77W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PS-8
Produkt ist nicht verfügbar
TC4538BP(N,F) TC4538BP(N,F) Toshiba Semiconductor and Storage TC4538BP_datasheet_en_20140301.pdf?did=20678&prodName=TC4538BP Description: IC MULTIVIBRATOR 100NS 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 100 ns
Independent Circuits: 2
Current - Output High, Low: 9mA, 15mA
Schmitt Trigger Input: No
Supplier Device Package: 16-DIP
Voltage - Supply: 3 V ~ 18 V
Produkt ist nicht verfügbar
TLP3480(TP,E TLP3480(TP,E Toshiba Semiconductor and Storage TLP3480_datasheet_en_20230523.pdf?did=69121&prodName=TLP3480 Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+3.92 EUR
Mindestbestellmenge: 1500
TLP3480(TP,E TLP3480(TP,E Toshiba Semiconductor and Storage TLP3480_datasheet_en_20230523.pdf?did=69121&prodName=TLP3480 Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
auf Bestellung 1631 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.75 EUR
10+ 6.19 EUR
100+ 5.07 EUR
500+ 4.27 EUR
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DF5A3.3JE,LM DF5A3.3JE,LM Toshiba Semiconductor and Storage docget.jsp?did=22254&prodName=DF5A3.3JE Description: TVS DIODE ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
DF5A3.3JE,LM DF5A3.3JE,LM Toshiba Semiconductor and Storage docget.jsp?did=22254&prodName=DF5A3.3JE Description: TVS DIODE ESV
auf Bestellung 7879 Stücke:
Lieferzeit 10-14 Tag (e)
MUZ6V8,LF MUZ6V8,LF Toshiba Semiconductor and Storage MUZ6V8_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V8 Description: TVS DIODE 6.8VWM 13VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
MUZ6V8,LF MUZ6V8,LF Toshiba Semiconductor and Storage MUZ6V8_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V8 Description: TVS DIODE 6.8VWM 13VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
auf Bestellung 5738 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
35+ 0.51 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 29
TC7PZ14FU,LJ(CT TC7PZ14FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ14FU_datasheet_en_20171205.pdf?did=14431&prodName=TC7PZ14FU Description: IC INVERT SCHMITT 2CH 2-INP US6
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
6000+ 0.089 EUR
15000+ 0.079 EUR
30000+ 0.074 EUR
Mindestbestellmenge: 3000
TC7PZ14FU,LJ(CT TC7PZ14FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ14FU_datasheet_en_20171205.pdf?did=14431&prodName=TC7PZ14FU Description: IC INVERT SCHMITT 2CH 2-INP US6
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
auf Bestellung 39198 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
45+ 0.39 EUR
52+ 0.34 EUR
100+ 0.22 EUR
250+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
RN1405,LXHF RN1405,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN1405,LXHF RN1405,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN1405,LF RN1405,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN1405,LF RN1405,LF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN1407,LF RN1407,LF Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1407 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1407,LF RN1407,LF Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1407 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
auf Bestellung 7544 Stücke:
Lieferzeit 10-14 Tag (e)
RN1407,LXHF RN1407,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
Mindestbestellmenge: 3000
RN1407,LXHF RN1407,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5798 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN1403,LXHF RN1403,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN1403,LXHF RN1403,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1409,LXHF RN1409,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN1409,LXHF RN1409,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1404,LXHF RN1404,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1404 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+ 0.097 EUR
Mindestbestellmenge: 3000
RN1404,LXHF RN1404,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1404 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
45+ 0.39 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 32
RN1406,LXHF RN1406,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN1406,LXHF RN1406,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1401,LXHF RN1401,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
Mindestbestellmenge: 3000
RN1401,LXHF RN1401,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18787&prodName=RN1401 Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN1408,LXHF RN1408,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN1408,LXHF RN1408,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN1402,LXHF RN1402,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RN1402,LXHF RN1402,LXHF Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 2675 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN1408,LF RN1408,LF Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1408 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN1408,LF RN1408,LF Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1408 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN4903FE,LXHF(CT RN4903FE,LXHF(CT Toshiba Semiconductor and Storage RN4903FE_datasheet_en_20210818.pdf?did=19022&prodName=RN4903FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.14 EUR
Mindestbestellmenge: 4000
RN4903FE,LXHF(CT RN4903FE,LXHF(CT Toshiba Semiconductor and Storage RN4903FE_datasheet_en_20210818.pdf?did=19022&prodName=RN4903FE Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
37+ 0.48 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
TCR3RM09A,LF TCR3RM09A,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 0.9V 300MA 4DFNC
Produkt ist nicht verfügbar
TCR3RM09A,LF TCR3RM09A,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 0.9V 300MA 4DFNC
auf Bestellung 9985 Stücke:
Lieferzeit 10-14 Tag (e)
2SA1832-Y,LXHF 2SA1832-Y,LXHF Toshiba Semiconductor and Storage 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
2SA1832-Y,LXHF 2SA1832-Y,LXHF Toshiba Semiconductor and Storage 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832 Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3690 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
42+ 0.43 EUR
100+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 29
XPH3R114MC,L1XHQ XPH3R114MC_datasheet_en_20211202.pdf?did=63639&prodName=XPH3R114MC
XPH3R114MC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.49 EUR
Mindestbestellmenge: 5000
XPH3R114MC,L1XHQ XPH3R114MC_datasheet_en_20211202.pdf?did=63639&prodName=XPH3R114MC
XPH3R114MC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
auf Bestellung 5920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.43 EUR
10+ 2.85 EUR
100+ 2.27 EUR
500+ 1.92 EUR
1000+ 1.63 EUR
2000+ 1.55 EUR
Mindestbestellmenge: 6
TPH1R306PL1,LQ docget.jsp?did=69026&prodName=TPH1R306PL1
TPH1R306PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.64 EUR
Mindestbestellmenge: 5000
TPH1R306PL1,LQ docget.jsp?did=69026&prodName=TPH1R306PL1
TPH1R306PL1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 7397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.78 EUR
10+ 3.14 EUR
100+ 2.5 EUR
500+ 2.12 EUR
1000+ 1.79 EUR
2000+ 1.71 EUR
Mindestbestellmenge: 5
TCR3UG30A,LF TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A
TCR3UG30A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Produkt ist nicht verfügbar
TCR3UG30A,LF TCR3UG08A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG08A
TCR3UG30A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.273V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 2785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
29+ 0.61 EUR
32+ 0.56 EUR
100+ 0.41 EUR
250+ 0.38 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
2500+ 0.21 EUR
Mindestbestellmenge: 24
74VHCT573AFT 74VHCT573AFT_datasheet_en_20160804.pdf?did=14041&prodName=74VHCT573AFT
74VHCT573AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 8.5ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
74VHCT573AFT 74VHCT573AFT_datasheet_en_20160804.pdf?did=14041&prodName=74VHCT573AFT
74VHCT573AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 8.5ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 1952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
26+ 0.69 EUR
28+ 0.64 EUR
100+ 0.51 EUR
250+ 0.48 EUR
500+ 0.4 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
TCR5RG29A,LF TCR5RG09A_datasheet_en_20230608.pdf?did=70203&prodName=TCR5RG09A
TCR5RG29A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 2.9V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 2.9V
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.22 EUR
Mindestbestellmenge: 5000
TCR5RG29A,LF TCR5RG09A_datasheet_en_20230608.pdf?did=70203&prodName=TCR5RG09A
TCR5RG29A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 2.9V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 2.9V
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 9893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
21+0.84 EUR
27+ 0.67 EUR
29+ 0.61 EUR
100+ 0.46 EUR
250+ 0.41 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
2500+ 0.24 EUR
Mindestbestellmenge: 21
TCR5RG28A,LF TCR5RG28A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG28A
TCR5RG28A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 2.8V
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.21V @ 500mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR5RG28A,LF TCR5RG28A_datasheet_en_20220705.pdf?did=70203&prodName=TCR5RG28A
TCR5RG28A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 2.8V
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.21V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 4580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.93 EUR
24+ 0.75 EUR
26+ 0.69 EUR
100+ 0.51 EUR
250+ 0.46 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
2500+ 0.26 EUR
Mindestbestellmenge: 19
TCR3DF11,LM(CT docget.jsp?did=14709&prodName=TCR3DF11
TCR3DF11,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 300MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
TCR3DF11,LM(CT docget.jsp?did=14709&prodName=TCR3DF11
TCR3DF11,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 300MA SMV
auf Bestellung 5834 Stücke:
Lieferzeit 10-14 Tag (e)
TPH2R104PL,LQ TPH2R104PL_datasheet_en_20160617.pdf?did=53315&prodName=TPH2R104PL
TPH2R104PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.75 EUR
Mindestbestellmenge: 3000
TPH2R104PL,LQ TPH2R104PL_datasheet_en_20160617.pdf?did=53315&prodName=TPH2R104PL
TPH2R104PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
auf Bestellung 11608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.81 EUR
12+ 1.49 EUR
100+ 1.16 EUR
500+ 0.98 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 10
SSM6P40TU,LF SSM6P40TU_datasheet_en_20140301.pdf?did=11195&prodName=SSM6P40TU
SSM6P40TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 1.4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: UF6
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.18 EUR
Mindestbestellmenge: 3000
SSM6P40TU,LF SSM6P40TU_datasheet_en_20140301.pdf?did=11195&prodName=SSM6P40TU
SSM6P40TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 1.4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: UF6
auf Bestellung 11644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
TLP4590A(TP1,F TLP4590A_AF_Mar2021.pdf
TLP4590A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: Gull Wing
Load Current: 1.2 A
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+3.38 EUR
Mindestbestellmenge: 1500
TLP4590A(TP1,F TLP4590A_AF_Mar2021.pdf
TLP4590A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NC 1.2A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NC (1 Form B)
Termination Style: Gull Wing
Load Current: 1.2 A
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 600 mOhms
auf Bestellung 1805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.79 EUR
10+ 5.43 EUR
25+ 4.83 EUR
50+ 4.59 EUR
100+ 4.34 EUR
250+ 3.86 EUR
500+ 3.62 EUR
Mindestbestellmenge: 4
TPCP8701(TE85L,F,M TPCP8701.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 80V 3A PS8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 1.77W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: PS-8
Produkt ist nicht verfügbar
TC4538BP(N,F) TC4538BP_datasheet_en_20140301.pdf?did=20678&prodName=TC4538BP
TC4538BP(N,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIVIBRATOR 100NS 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 100 ns
Independent Circuits: 2
Current - Output High, Low: 9mA, 15mA
Schmitt Trigger Input: No
Supplier Device Package: 16-DIP
Voltage - Supply: 3 V ~ 18 V
Produkt ist nicht verfügbar
TLP3480(TP,E TLP3480_datasheet_en_20230523.pdf?did=69121&prodName=TLP3480
TLP3480(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+3.92 EUR
Mindestbestellmenge: 1500
TLP3480(TP,E TLP3480_datasheet_en_20230523.pdf?did=69121&prodName=TLP3480
TLP3480(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4.5A 0-30V T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 4.5 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
auf Bestellung 1631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.75 EUR
10+ 6.19 EUR
100+ 5.07 EUR
500+ 4.27 EUR
Mindestbestellmenge: 3
DF5A3.3JE,LM docget.jsp?did=22254&prodName=DF5A3.3JE
DF5A3.3JE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
DF5A3.3JE,LM docget.jsp?did=22254&prodName=DF5A3.3JE
DF5A3.3JE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
auf Bestellung 7879 Stücke:
Lieferzeit 10-14 Tag (e)
MUZ6V8,LF MUZ6V8_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V8
MUZ6V8,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.8VWM 13VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
Mindestbestellmenge: 3000
MUZ6V8,LF MUZ6V8_datasheet_en_20201026.pdf?did=69487&prodName=MUZ6V8
MUZ6V8,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.8VWM 13VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 88pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 6.8V
Supplier Device Package: USM
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V (Typ)
Power - Peak Pulse: 180W
Power Line Protection: No
Part Status: Active
auf Bestellung 5738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
35+ 0.51 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 29
TC7PZ14FU,LJ(CT TC7PZ14FU_datasheet_en_20171205.pdf?did=14431&prodName=TC7PZ14FU
TC7PZ14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 2CH 2-INP US6
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
6000+ 0.089 EUR
15000+ 0.079 EUR
30000+ 0.074 EUR
Mindestbestellmenge: 3000
TC7PZ14FU,LJ(CT TC7PZ14FU_datasheet_en_20171205.pdf?did=14431&prodName=TC7PZ14FU
TC7PZ14FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 2CH 2-INP US6
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: US6
Max Propagation Delay @ V, Max CL: 5.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 10 µA
auf Bestellung 39198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
45+ 0.39 EUR
52+ 0.34 EUR
100+ 0.22 EUR
250+ 0.18 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 34
RN1405,LXHF
RN1405,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN1405,LXHF
RN1405,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN1405,LF docget.jsp?did=18787&prodName=RN1401
RN1405,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN1405,LF docget.jsp?did=18787&prodName=RN1401
RN1405,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN1407,LF docget.jsp?did=18789&prodName=RN1407
RN1407,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1407,LF docget.jsp?did=18789&prodName=RN1407
RN1407,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
auf Bestellung 7544 Stücke:
Lieferzeit 10-14 Tag (e)
RN1407,LXHF
RN1407,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
Mindestbestellmenge: 3000
RN1407,LXHF
RN1407,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 5798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN1403,LXHF
RN1403,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN1403,LXHF
RN1403,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1409,LXHF
RN1409,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN1409,LXHF
RN1409,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1404,LXHF docget.jsp?did=18787&prodName=RN1404
RN1404,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.097 EUR
Mindestbestellmenge: 3000
RN1404,LXHF docget.jsp?did=18787&prodName=RN1404
RN1404,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
45+ 0.39 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 32
RN1406,LXHF
RN1406,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN1406,LXHF
RN1406,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1401,LXHF docget.jsp?did=18787&prodName=RN1401
RN1401,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
Mindestbestellmenge: 3000
RN1401,LXHF docget.jsp?did=18787&prodName=RN1401
RN1401,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN1408,LXHF
RN1408,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.098 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 3000
RN1408,LXHF
RN1408,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN1402,LXHF
RN1402,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
RN1402,LXHF
RN1402,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 2675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.38 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
RN1408,LF docget.jsp?did=18789&prodName=RN1408
RN1408,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN1408,LF docget.jsp?did=18789&prodName=RN1408
RN1408,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Produkt ist nicht verfügbar
RN4903FE,LXHF(CT RN4903FE_datasheet_en_20210818.pdf?did=19022&prodName=RN4903FE
RN4903FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.14 EUR
Mindestbestellmenge: 4000
RN4903FE,LXHF(CT RN4903FE_datasheet_en_20210818.pdf?did=19022&prodName=RN4903FE
RN4903FE,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
37+ 0.48 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.16 EUR
2000+ 0.14 EUR
Mindestbestellmenge: 28
TCR3RM09A,LF
TCR3RM09A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4DFNC
Produkt ist nicht verfügbar
TCR3RM09A,LF
TCR3RM09A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 300MA 4DFNC
auf Bestellung 9985 Stücke:
Lieferzeit 10-14 Tag (e)
2SA1832-Y,LXHF 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832
2SA1832-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
Mindestbestellmenge: 3000
2SA1832-Y,LXHF 2SA1832_datasheet_en_20210706.pdf?did=19185&prodName=2SA1832
2SA1832-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 120 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
42+ 0.43 EUR
100+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
Mindestbestellmenge: 29
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