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TK290P60Y,RQ TK290P60Y,RQ Toshiba Semiconductor and Storage TK290P60Y_datasheet_en_20161115.pdf?did=55272&prodName=TK290P60Y Description: MOSFET N-CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 450µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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2000+1.43 EUR
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TK290P60Y,RQ TK290P60Y,RQ Toshiba Semiconductor and Storage TK290P60Y_datasheet_en_20161115.pdf?did=55272&prodName=TK290P60Y Description: MOSFET N-CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 450µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3980 Stücke:
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7+3.17 EUR
10+2.62 EUR
100+2.08 EUR
500+1.76 EUR
1000+1.5 EUR
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RN4901FE,LF(CT RN4901FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19018&prodName=RN4901FE Description: PNP + NPN BRT Q1BSR4.7KOHM Q1BER
Produkt ist nicht verfügbar
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RN4901FE,LF(CT RN4901FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19018&prodName=RN4901FE Description: PNP + NPN BRT Q1BSR4.7KOHM Q1BER
auf Bestellung 350 Stücke:
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51+0.42 EUR
100+0.21 EUR
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RN4911,LF(CT RN4911,LF(CT Toshiba Semiconductor and Storage Description: PNP + NPN BRT Q1BSR4.7KOHM Q1BER
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RN4911,LF(CT RN4911,LF(CT Toshiba Semiconductor and Storage Description: PNP + NPN BRT Q1BSR4.7KOHM Q1BER
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SSM3J144TU,LXHF SSM3J144TU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59193&prodName=SSM3J144TU Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J145TU,LXHF SSM3J145TU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59195&prodName=SSM3J145TU Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSM3J145TU,LXHF SSM3J145TU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59195&prodName=SSM3J145TU Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1378 Stücke:
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22+0.96 EUR
35+0.6 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.25 EUR
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SSM3J143TU,LXHF SSM3J143TU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59191&prodName=SSM3J143TU Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSM3J143TU,LXHF SSM3J143TU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59191&prodName=SSM3J143TU Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.19 EUR
27+0.79 EUR
100+0.51 EUR
500+0.4 EUR
1000+0.36 EUR
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SSM3J140TU,LXHF SSM3J140TU,LXHF Toshiba Semiconductor and Storage SSM3J140TU_datasheet_en_20210528.pdf?did=59188&prodName=SSM3J140TU Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSM3J140TU,LXHF SSM3J140TU,LXHF Toshiba Semiconductor and Storage SSM3J140TU_datasheet_en_20210528.pdf?did=59188&prodName=SSM3J140TU Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSM3J56ACT,L3F SSM3J56ACT,L3F Toshiba Semiconductor and Storage docget.jsp?did=30735&prodName=SSM3J56ACT Description: MOSFET P-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J56ACT,L3F SSM3J56ACT,L3F Toshiba Semiconductor and Storage docget.jsp?did=30735&prodName=SSM3J56ACT Description: MOSFET P-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 4151 Stücke:
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25+0.86 EUR
40+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
2000+0.2 EUR
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SSM3J374R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59187&prodName=SSM3J374R Description: SMOS P-CH VDSS:-30V VGSS:-20/+10
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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3000+0.19 EUR
6000+0.18 EUR
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SSM3J374R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59187&prodName=SSM3J374R Description: SMOS P-CH VDSS:-30V VGSS:-20/+10
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 8344 Stücke:
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24+0.9 EUR
34+0.62 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
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SSM3J371R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59197&prodName=SSM3J371R Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SSM3J371R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59197&prodName=SSM3J371R Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1457 Stücke:
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23+0.92 EUR
37+0.57 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
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SSM3J168F,LF SSM3J168F,LF Toshiba Semiconductor and Storage docget.jsp?did=55835&prodName=SSM3J168F Description: MOSFET P-CH 60V 400MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
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SSM3J378R,LXHF SSM3J378R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59205&prodName=SSM3J378R Description: AECQ MOSFET PCH -20V -6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J378R,LXHF SSM3J378R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59205&prodName=SSM3J378R Description: AECQ MOSFET PCH -20V -6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 20100 Stücke:
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18+1.21 EUR
28+0.75 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.32 EUR
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SSM3J66MFV,L3XHF SSM3J66MFV,L3XHF Toshiba Semiconductor and Storage docget.jsp?did=61143&prodName=SSM3J66MFV Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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SSM3J66MFV,L3XHF SSM3J66MFV,L3XHF Toshiba Semiconductor and Storage docget.jsp?did=61143&prodName=SSM3J66MFV Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
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35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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SSM3J168F,LXHF SSM3J168F,LXHF Toshiba Semiconductor and Storage docget.jsp?did=55835&prodName=SSM3J168F Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
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SSM3J168F,LXHF SSM3J168F,LXHF Toshiba Semiconductor and Storage docget.jsp?did=55835&prodName=SSM3J168F Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
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500+0.32 EUR
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SSM3J356R,LXHF SSM3J356R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=30685&prodName=SSM3J356R Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
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SSM3J356R,LXHF SSM3J356R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=30685&prodName=SSM3J356R Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7340 Stücke:
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32+0.67 EUR
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500+0.32 EUR
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SSM3J351R,LXHF SSM3J351R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=53735&prodName=SSM3J351R Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
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3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.21 EUR
30000+0.2 EUR
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SSM3J351R,LXHF SSM3J351R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=53735&prodName=SSM3J351R Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 41990 Stücke:
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500+0.36 EUR
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TC78H651FNG(O,EL) TC78H651FNG(O,EL) Toshiba Semiconductor and Storage TC78H651FNG_datasheet_en_20180418.pdf?did=61125&prodName=TC78H651FNG Description: IC MOTOR DRIVER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4000 Stücke:
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4000+1.21 EUR
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TC78H651FNG(O,EL) TC78H651FNG(O,EL) Toshiba Semiconductor and Storage TC78H651FNG_datasheet_en_20180418.pdf?did=61125&prodName=TC78H651FNG Description: IC MOTOR DRIVER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 5994 Stücke:
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10+2.56 EUR
25+2.43 EUR
100+2 EUR
250+1.87 EUR
500+1.65 EUR
1000+1.3 EUR
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TB62269FTAG,EL TB62269FTAG,EL Toshiba Semiconductor and Storage docget.jsp?did=55078&prodName=TB62269FTAG Description: IC MOTOR DRIVER 32VQFN
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TB62269FTAG,EL TB62269FTAG,EL Toshiba Semiconductor and Storage docget.jsp?did=55078&prodName=TB62269FTAG Description: IC MOTOR DRIVER 32VQFN
auf Bestellung 4040 Stücke:
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10+4.89 EUR
25+4.62 EUR
100+3.94 EUR
250+3.69 EUR
500+3.24 EUR
1000+2.68 EUR
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GT20N135SRA,S1E GT20N135SRA,S1E Toshiba Semiconductor and Storage GT20N135SRA_datasheet_en_20240417.pdf?did=67767&prodName=GT20N135SRA Description: IGBT 1350V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: -, 700µJ (off)
Test Condition: 300V, 40A, 39Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 312 W
auf Bestellung 24 Stücke:
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3+9.26 EUR
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SSM3K56FS,LF SSM3K56FS,LF Toshiba Semiconductor and Storage docget.jsp?did=13419&prodName=SSM3K56FS Description: MOSFET N-CH 20V 800MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 3969000 Stücke:
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3000+0.15 EUR
9000+0.13 EUR
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SSM3K56FS,LF SSM3K56FS,LF Toshiba Semiconductor and Storage docget.jsp?did=13419&prodName=SSM3K56FS Description: MOSFET N-CH 20V 800MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 3969513 Stücke:
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30+0.71 EUR
48+0.44 EUR
67+0.31 EUR
100+0.27 EUR
500+0.2 EUR
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SSM6K810R,LXHF SSM6K810R,LXHF Toshiba Semiconductor and Storage SSM6K810R_datasheet_en_20200924.pdf?did=63953&prodName=SSM6K810R Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.52 EUR
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SSM6K810R,LXHF SSM6K810R,LXHF Toshiba Semiconductor and Storage SSM6K810R_datasheet_en_20200924.pdf?did=63953&prodName=SSM6K810R Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4930 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.09 EUR
16+1.31 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
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SSM6J808R,LXHF SSM6J808R,LXHF Toshiba Semiconductor and Storage SSM6J808R_datasheet_en_20210528.pdf?did=67689&prodName=SSM6J808R Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.55 EUR
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SSM6J808R,LXHF SSM6J808R,LXHF Toshiba Semiconductor and Storage SSM6J808R_datasheet_en_20210528.pdf?did=67689&prodName=SSM6J808R Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6932 Stücke:
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10+2.14 EUR
16+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.62 EUR
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TCR2EN33,LF(SE TCR2EN33,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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TCR2EN33,LF(SE TCR2EN33,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
auf Bestellung 981 Stücke:
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27+0.8 EUR
35+0.61 EUR
39+0.55 EUR
100+0.38 EUR
250+0.32 EUR
500+0.26 EUR
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TCR2LN33,LF(SE TCR2LN33,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3.3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
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TCR2LN33,LF(SE TCR2LN33,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3.3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
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TCR3RM33A,LF(SE TCR3RM33A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG 33V 300MA 4DFNC
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TCR3RM33A,LF(SE TCR3RM33A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG 33V 300MA 4DFNC
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TCR3UF33A,LM(CT TCR3UF33A,LM(CT Toshiba Semiconductor and Storage TCR3UF105A_datasheet_en_20241028.pdf?did=68764&prodName=TCR3UF105A Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
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TCR3UF33A,LM(CT TCR3UF33A,LM(CT Toshiba Semiconductor and Storage TCR3UF105A_datasheet_en_20241028.pdf?did=68764&prodName=TCR3UF105A Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
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SSM6G18NU,LF SSM6G18NU,LF Toshiba Semiconductor and Storage docget.jsp?did=6351&prodName=SSM6G18NU Description: MOSFET P-CH 20V 2A 6UDFN
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SSM6G18NU,LF SSM6G18NU,LF Toshiba Semiconductor and Storage docget.jsp?did=6351&prodName=SSM6G18NU Description: MOSFET P-CH 20V 2A 6UDFN
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SSM5H08TU,LF SSM5H08TU,LF Toshiba Semiconductor and Storage SSM5H08TU_datasheet_en_20140301.pdf?did=21119&prodName=SSM5H08TU Description: MOSFET N-CH 20V 1.5A UFV
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
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SSM5H08TU,LF SSM5H08TU,LF Toshiba Semiconductor and Storage SSM5H08TU_datasheet_en_20140301.pdf?did=21119&prodName=SSM5H08TU Description: MOSFET N-CH 20V 1.5A UFV
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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TCD1205DG(8Z,W) Toshiba Semiconductor and Storage TCD1205DG_Prelim_02-02-04.pdf Description: CCD IMAGE SENSOR INTEGRATED CIRC
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7UL1T04FU,LF 7UL1T04FU,LF Toshiba Semiconductor and Storage docget.jsp?did=70733&prodName=7UL1T04FU Description: IC INV 1-CIR 1-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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7UL1T04FU,LF 7UL1T04FU,LF Toshiba Semiconductor and Storage docget.jsp?did=70733&prodName=7UL1T04FU Description: IC INV 1-CIR 1-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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7UL1G14FU,LF 7UL1G14FU,LF Toshiba Semiconductor and Storage docget.jsp?did=70741&prodName=7UL1G14FU Description: IC INVERT SCHMITT 1CH 1-INP USV
Input Logic Level - High: 0.73V ~ 2.14V
Supplier Device Package: USV
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Input Logic Level - Low: 0.18V ~ 0.96V
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7UL1G14FU,LF 7UL1G14FU,LF Toshiba Semiconductor and Storage docget.jsp?did=70741&prodName=7UL1G14FU Description: IC INVERT SCHMITT 1CH 1-INP USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Input Logic Level - Low: 0.18V ~ 0.96V
Input Logic Level - High: 0.73V ~ 2.14V
Supplier Device Package: USV
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
auf Bestellung 12192 Stücke:
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DF2S6M5CT,L3F DF2S6M5CT,L3F Toshiba Semiconductor and Storage DF2S6M5CT_datasheet_en_20210317.pdf?did=70611&prodName=DF2S6M5CT Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
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DF2S6M5CT,L3F DF2S6M5CT,L3F Toshiba Semiconductor and Storage DF2S6M5CT_datasheet_en_20210317.pdf?did=70611&prodName=DF2S6M5CT Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Power Line Protection: No
Power - Peak Pulse: 37W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 5.5V
Unidirectional Channels: 1
Supplier Device Package: CST2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
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TK290P60Y,RQ TK290P60Y_datasheet_en_20161115.pdf?did=55272&prodName=TK290P60Y
TK290P60Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 450µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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TK290P60Y,RQ TK290P60Y_datasheet_en_20161115.pdf?did=55272&prodName=TK290P60Y
TK290P60Y,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 450µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3980 Stücke:
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RN4901FE,LF(CT docget.jsp?did=19018&prodName=RN4901FE
RN4901FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR4.7KOHM Q1BER
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RN4901FE,LF(CT docget.jsp?did=19018&prodName=RN4901FE
RN4901FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR4.7KOHM Q1BER
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RN4911,LF(CT
RN4911,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR4.7KOHM Q1BER
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RN4911,LF(CT
RN4911,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR4.7KOHM Q1BER
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SSM3J144TU,LXHF docget.jsp?did=59193&prodName=SSM3J144TU
SSM3J144TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J145TU,LXHF docget.jsp?did=59195&prodName=SSM3J145TU
SSM3J145TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSM3J145TU,LXHF docget.jsp?did=59195&prodName=SSM3J145TU
SSM3J145TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1378 Stücke:
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22+0.96 EUR
35+0.6 EUR
100+0.38 EUR
500+0.29 EUR
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SSM3J143TU,LXHF docget.jsp?did=59191&prodName=SSM3J143TU
SSM3J143TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSM3J143TU,LXHF docget.jsp?did=59191&prodName=SSM3J143TU
SSM3J143TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
27+0.79 EUR
100+0.51 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 18 Stücke
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SSM3J140TU,LXHF SSM3J140TU_datasheet_en_20210528.pdf?did=59188&prodName=SSM3J140TU
SSM3J140TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM3J140TU,LXHF SSM3J140TU_datasheet_en_20210528.pdf?did=59188&prodName=SSM3J140TU
SSM3J140TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SSM3J56ACT,L3F docget.jsp?did=30735&prodName=SSM3J56ACT
SSM3J56ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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SSM3J56ACT,L3F docget.jsp?did=30735&prodName=SSM3J56ACT
SSM3J56ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 4151 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
40+0.52 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
2000+0.2 EUR
Mindestbestellmenge: 25 Stücke
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SSM3J374R,LXHF docget.jsp?did=59187&prodName=SSM3J374R
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-30V VGSS:-20/+10
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J374R,LXHF docget.jsp?did=59187&prodName=SSM3J374R
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-30V VGSS:-20/+10
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 8344 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
34+0.62 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
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SSM3J371R,LXHF docget.jsp?did=59197&prodName=SSM3J371R
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM3J371R,LXHF docget.jsp?did=59197&prodName=SSM3J371R
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1457 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
37+0.57 EUR
100+0.37 EUR
500+0.27 EUR
1000+0.25 EUR
Mindestbestellmenge: 23 Stücke
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SSM3J168F,LF docget.jsp?did=55835&prodName=SSM3J168F
SSM3J168F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 400MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J378R,LXHF docget.jsp?did=59205&prodName=SSM3J378R
SSM3J378R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -20V -6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J378R,LXHF docget.jsp?did=59205&prodName=SSM3J378R
SSM3J378R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -20V -6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 20100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.21 EUR
28+0.75 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.32 EUR
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SSM3J66MFV,L3XHF docget.jsp?did=61143&prodName=SSM3J66MFV
SSM3J66MFV,L3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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SSM3J66MFV,L3XHF docget.jsp?did=61143&prodName=SSM3J66MFV
SSM3J66MFV,L3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VESM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 35 Stücke
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SSM3J168F,LXHF docget.jsp?did=55835&prodName=SSM3J168F
SSM3J168F,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J168F,LXHF docget.jsp?did=55835&prodName=SSM3J168F
SSM3J168F,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6123 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20 Stücke
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SSM3J356R,LXHF docget.jsp?did=30685&prodName=SSM3J356R
SSM3J356R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.24 EUR
6000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J356R,LXHF docget.jsp?did=30685&prodName=SSM3J356R
SSM3J356R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7340 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.09 EUR
32+0.67 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 20 Stücke
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SSM3J351R,LXHF docget.jsp?did=53735&prodName=SSM3J351R
SSM3J351R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
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3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
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30000+0.2 EUR
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SSM3J351R,LXHF docget.jsp?did=53735&prodName=SSM3J351R
SSM3J351R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 41990 Stücke:
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TC78H651FNG(O,EL) TC78H651FNG_datasheet_en_20180418.pdf?did=61125&prodName=TC78H651FNG
TC78H651FNG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4000 Stücke:
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4000+1.21 EUR
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TC78H651FNG(O,EL) TC78H651FNG_datasheet_en_20180418.pdf?did=61125&prodName=TC78H651FNG
TC78H651FNG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 5994 Stücke:
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8+2.87 EUR
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TB62269FTAG,EL docget.jsp?did=55078&prodName=TB62269FTAG
TB62269FTAG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 32VQFN
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4000+2.62 EUR
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TB62269FTAG,EL docget.jsp?did=55078&prodName=TB62269FTAG
TB62269FTAG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 32VQFN
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4+5.45 EUR
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GT20N135SRA,S1E GT20N135SRA_datasheet_en_20240417.pdf?did=67767&prodName=GT20N135SRA
GT20N135SRA,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1350V 40A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: -, 700µJ (off)
Test Condition: 300V, 40A, 39Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 312 W
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3+9.26 EUR
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SSM3K56FS,LF docget.jsp?did=13419&prodName=SSM3K56FS
SSM3K56FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 3969000 Stücke:
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3000+0.15 EUR
9000+0.13 EUR
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SSM3K56FS,LF docget.jsp?did=13419&prodName=SSM3K56FS
SSM3K56FS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 3969513 Stücke:
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30+0.71 EUR
48+0.44 EUR
67+0.31 EUR
100+0.27 EUR
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SSM6K810R,LXHF SSM6K810R_datasheet_en_20200924.pdf?did=63953&prodName=SSM6K810R
SSM6K810R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.52 EUR
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SSM6K810R,LXHF SSM6K810R_datasheet_en_20200924.pdf?did=63953&prodName=SSM6K810R
SSM6K810R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4930 Stücke:
Lieferzeit 10-14 Tag (e)
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10+2.09 EUR
16+1.31 EUR
100+0.86 EUR
500+0.67 EUR
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SSM6J808R,LXHF SSM6J808R_datasheet_en_20210528.pdf?did=67689&prodName=SSM6J808R
SSM6J808R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.55 EUR
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SSM6J808R,LXHF SSM6J808R_datasheet_en_20210528.pdf?did=67689&prodName=SSM6J808R
SSM6J808R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6932 Stücke:
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10+2.14 EUR
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100+0.89 EUR
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TCR2EN33,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
TCR2EN33,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EN33,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
TCR2EN33,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
auf Bestellung 981 Stücke:
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27+0.8 EUR
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TCR2LN33,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN33,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN33,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN33,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
auf Bestellung 2634 Stücke:
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23+0.92 EUR
39+0.55 EUR
47+0.44 EUR
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TCR3RM33A,LF(SE
TCR3RM33A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 33V 300MA 4DFNC
Produkt ist nicht verfügbar
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TCR3RM33A,LF(SE
TCR3RM33A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 33V 300MA 4DFNC
auf Bestellung 6356 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
25+0.83 EUR
28+0.76 EUR
100+0.57 EUR
250+0.51 EUR
500+0.43 EUR
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2500+0.3 EUR
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TCR3UF33A,LM(CT TCR3UF105A_datasheet_en_20241028.pdf?did=68764&prodName=TCR3UF105A
TCR3UF33A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.2 EUR
6000+0.19 EUR
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TCR3UF33A,LM(CT TCR3UF105A_datasheet_en_20241028.pdf?did=68764&prodName=TCR3UF105A
TCR3UF33A,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 13728 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
63+0.33 EUR
71+0.3 EUR
100+0.25 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.21 EUR
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SSM6G18NU,LF docget.jsp?did=6351&prodName=SSM6G18NU
SSM6G18NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A 6UDFN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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SSM6G18NU,LF docget.jsp?did=6351&prodName=SSM6G18NU
SSM6G18NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A 6UDFN
auf Bestellung 5900 Stücke:
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SSM5H08TU,LF SSM5H08TU_datasheet_en_20140301.pdf?did=21119&prodName=SSM5H08TU
SSM5H08TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.5A UFV
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
Produkt ist nicht verfügbar
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SSM5H08TU,LF SSM5H08TU_datasheet_en_20140301.pdf?did=21119&prodName=SSM5H08TU
SSM5H08TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.5A UFV
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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TCD1205DG(8Z,W) TCD1205DG_Prelim_02-02-04.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: CCD IMAGE SENSOR INTEGRATED CIRC
Produkt ist nicht verfügbar
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7UL1T04FU,LF docget.jsp?did=70733&prodName=7UL1T04FU
7UL1T04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INV 1-CIR 1-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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7UL1T04FU,LF docget.jsp?did=70733&prodName=7UL1T04FU
7UL1T04FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INV 1-CIR 1-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
auf Bestellung 6303 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
109+0.19 EUR
124+0.17 EUR
146+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.12 EUR
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7UL1G14FU,LF docget.jsp?did=70741&prodName=7UL1G14FU
7UL1G14FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1-INP USV
Input Logic Level - High: 0.73V ~ 2.14V
Supplier Device Package: USV
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Input Logic Level - Low: 0.18V ~ 0.96V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.083 EUR
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7UL1G14FU,LF docget.jsp?did=70741&prodName=7UL1G14FU
7UL1G14FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1-INP USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Input Logic Level - Low: 0.18V ~ 0.96V
Input Logic Level - High: 0.73V ~ 2.14V
Supplier Device Package: USV
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
auf Bestellung 12192 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
137+0.15 EUR
158+0.13 EUR
187+0.11 EUR
250+0.1 EUR
500+0.096 EUR
1000+0.092 EUR
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DF2S6M5CT,L3F DF2S6M5CT_datasheet_en_20210317.pdf?did=70611&prodName=DF2S6M5CT
DF2S6M5CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2S6M5CT,L3F DF2S6M5CT_datasheet_en_20210317.pdf?did=70611&prodName=DF2S6M5CT
DF2S6M5CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Power Line Protection: No
Power - Peak Pulse: 37W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 5.5V
Unidirectional Channels: 1
Supplier Device Package: CST2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
auf Bestellung 9555 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
46+0.46 EUR
69+0.31 EUR
103+0.2 EUR
500+0.15 EUR
1000+0.14 EUR
2000+0.13 EUR
5000+0.11 EUR
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