Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13062) > Seite 165 nach 218
Foto | Bezeichnung | Hersteller | Beschreibung |
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SSM3J140TU,LXHF | Toshiba Semiconductor and Storage | Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J56ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 1.4A CST3 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J56ACT,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 1.4A CST3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: CST3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V |
auf Bestellung 27574 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J374R,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS P-CH VDSS:-30V VGSS:-20/+10 Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: SOT-23F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J374R,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS P-CH VDSS:-30V VGSS:-20/+10 Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: SOT-23F Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 8694 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J371R,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J371R,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 15356 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J168F,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 60V 400MA S-MINI Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J378R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -20V -6A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J378R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -20V -6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): +6V, -8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V |
auf Bestellung 23911 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J66MFV,L3XHF | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA |
Produkt ist nicht verfügbar |
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SSM3J66MFV,L3XHF | Toshiba Semiconductor and Storage | Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA |
auf Bestellung 7876 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J168F,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS LOW RON VDS:-60V VGSS:+10/- Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: S-Mini Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J168F,LXHF | Toshiba Semiconductor and Storage |
Description: SMOS LOW RON VDS:-60V VGSS:+10/- Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: S-Mini Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 9878 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J356R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -60V -2A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
Produkt ist nicht verfügbar |
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SSM3J356R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -60V -2A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
Produkt ist nicht verfügbar |
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SSM3J351R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -60V -3.5A SOT23 Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3J351R,LXHF | Toshiba Semiconductor and Storage |
Description: AECQ MOSFET PCH -60V -3.5A SOT23 Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 15688 Stücke: Lieferzeit 10-14 Tag (e) |
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TC78H651FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 16TSSOP Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (4) Applications: General Purpose Technology: DMOS Voltage - Load: 1.8V ~ 6V Supplier Device Package: 16-TSSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TC78H651FNG(O,EL) | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.5A Operating Temperature: -40°C ~ 105°C Output Configuration: Half Bridge (4) Applications: General Purpose Technology: DMOS Voltage - Load: 1.8V ~ 6V Supplier Device Package: 16-TSSOP Motor Type - AC, DC: Brushed DC Part Status: Active |
auf Bestellung 5994 Stücke: Lieferzeit 10-14 Tag (e) |
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TB62269FTAG,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER 32VQFN |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB62269FTAG,EL | Toshiba Semiconductor and Storage | Description: IC MOTOR DRIVER 32VQFN |
auf Bestellung 4040 Stücke: Lieferzeit 10-14 Tag (e) |
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GT20N135SRA,S1E | Toshiba Semiconductor and Storage |
Description: IGBT 1350V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247 Switching Energy: -, 700µJ (off) Test Condition: 300V, 40A, 39Ohm, 15V Gate Charge: 185 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 80 A Power - Max: 312 W |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K56FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA SSM Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
auf Bestellung 4902000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K56FS,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 800MA SSM Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SSM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V |
auf Bestellung 4904911 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6K810R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6K810R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5945 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6J808R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SSM6J808R,LXHF | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2614 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2EN33,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.3V IOUT=200MA Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.18V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
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TCR2EN33,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.3V IOUT=200MA Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.18V @ 150mA Protection Features: Over Current |
auf Bestellung 981 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR2LN33,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.3V I=200MA Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
Produkt ist nicht verfügbar |
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TCR2LN33,LF(SE | Toshiba Semiconductor and Storage |
Description: LDO REG VOUT=3.3V I=200MA Packaging: Cut Tape (CT) Package / Case: 4-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-SDFN (0.8x0.8) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.28V @ 150mA Protection Features: Over Current |
auf Bestellung 8964 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3RM33A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG 33V 300MA 4DFNC |
Produkt ist nicht verfügbar |
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TCR3RM33A,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG 33V 300MA 4DFNC |
auf Bestellung 6356 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3UF33A,LM(CT | Toshiba Semiconductor and Storage |
Description: (LDO) LINEAR VOLTAGE REG, VIN: 6 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.287V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3UF33A,LM(CT | Toshiba Semiconductor and Storage |
Description: (LDO) LINEAR VOLTAGE REG, VIN: 6 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 680 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.287V @ 300mA Protection Features: Over Current, Over Temperature |
auf Bestellung 9445 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6G18NU,LF | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 2A 6UDFN |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6G18NU,LF | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 2A 6UDFN |
auf Bestellung 5900 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM5H08TU,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 1.5A UFV |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM5H08TU,LF | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 20V 1.5A UFV |
auf Bestellung 5971 Stücke: Lieferzeit 10-14 Tag (e) |
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TCD1205DG(8Z,W) | Toshiba Semiconductor and Storage | Description: CCD IMAGE SENSOR INTEGRATED CIRC |
Produkt ist nicht verfügbar |
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DF2B5M5CT,L3F | Toshiba Semiconductor and Storage | Description: BIDIRECTIONAL ESD DIODE VRWM:+/- |
Produkt ist nicht verfügbar |
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DF2B5M5CT,L3F | Toshiba Semiconductor and Storage | Description: BIDIRECTIONAL ESD DIODE VRWM:+/- |
auf Bestellung 9627 Stücke: Lieferzeit 10-14 Tag (e) |
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7UL1T04FU,LF | Toshiba Semiconductor and Storage |
Description: LOGIC, INVERTER WITH LEVEL SHIFT Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: USV Input Logic Level - High: 0.1V ~ 0.4V Input Logic Level - Low: 2V ~ 2.48V Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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7UL1T04FU,LF | Toshiba Semiconductor and Storage |
Description: LOGIC, INVERTER WITH LEVEL SHIFT Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: USV Input Logic Level - High: 0.1V ~ 0.4V Input Logic Level - Low: 2V ~ 2.48V Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 1632 Stücke: Lieferzeit 10-14 Tag (e) |
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7UL1G14FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 1CH 1-INP USV Packaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: USV Input Logic Level - High: 0.73V ~ 2.14V Input Logic Level - Low: 0.18V ~ 0.96V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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7UL1G14FU,LF | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 1CH 1-INP USV Packaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: USV Input Logic Level - High: 0.73V ~ 2.14V Input Logic Level - Low: 0.18V ~ 0.96V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 11526 Stücke: Lieferzeit 10-14 Tag (e) |
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DF2S6M5CT,L3F | Toshiba Semiconductor and Storage | Description: UNIDIRECTIONAL ESD DIODE VRWM:5. |
Produkt ist nicht verfügbar |
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DF2S6M5CT,L3F | Toshiba Semiconductor and Storage | Description: UNIDIRECTIONAL ESD DIODE VRWM:5. |
auf Bestellung 9770 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3475SRHA4(TPE | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-60V Packaging: Tape & Reel (TR) Package / Case: 16-LDFN Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.5VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 250 mA Supplier Device Package: S-VSON16T (2x6.25) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3475SRHA4(TPE | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-60V Packaging: Cut Tape (CT) Package / Case: 16-LDFN Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.5VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 250 mA Supplier Device Package: S-VSON16T (2x6.25) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
auf Bestellung 1772 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3412SRHA4(TPE | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-60V Packaging: Tape & Reel (TR) Package / Case: 16-LDFN Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.5VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 250 mA Supplier Device Package: S-VSON16T (2x6.25) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3412SRHA4(TPE | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 250MA 0-60V Packaging: Cut Tape (CT) Package / Case: 16-LDFN Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.5VDC Circuit: SPST-NO (1 Form A) Termination Style: SMD (SMT) Tab Load Current: 250 mA Supplier Device Package: S-VSON16T (2x6.25) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
auf Bestellung 1763 Stücke: Lieferzeit 10-14 Tag (e) |
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GT30N135SRA,S1E | Toshiba Semiconductor and Storage |
Description: IGBT 1350V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A Supplier Device Package: TO-247 Switching Energy: -, 1.3mJ (off) Test Condition: 300V, 60A, 39Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 120 A Power - Max: 348 W |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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74VHC9273FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 100 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOPB Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
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74VHC9273FT | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 8mA, 8mA Trigger Type: Positive Edge Clock Frequency: 100 MHz Input Capacitance: 4 pF Supplier Device Package: 20-TSSOPB Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF Part Status: Active Number of Bits per Element: 8 |
auf Bestellung 2049 Stücke: Lieferzeit 10-14 Tag (e) |
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74VHCV574FT | Toshiba Semiconductor and Storage | Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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74VHCV574FT | Toshiba Semiconductor and Storage | Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TB9051FTG,EL | Toshiba Semiconductor and Storage |
Description: MOTOR CONTROLLER SINGLE CHANNEL Packaging: Tape & Reel (TR) Package / Case: 28-PowerQFN Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 6A Interface: PWM Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 5.5V Technology: Bi-CMOS Supplier Device Package: 28-QFN (6x6) Motor Type - AC, DC: Brushed DC Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
SSM3J140TU,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 0.95 EUR |
22+ | 0.81 EUR |
100+ | 0.61 EUR |
SSM3J56ACT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Description: MOSFET P-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.12 EUR |
SSM3J56ACT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Description: MOSFET P-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 27574 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
41+ | 0.43 EUR |
100+ | 0.22 EUR |
500+ | 0.19 EUR |
1000+ | 0.15 EUR |
2000+ | 0.14 EUR |
5000+ | 0.13 EUR |
SSM3J374R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-30V VGSS:-20/+10
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Qualification: AEC-Q101
Description: SMOS P-CH VDSS:-30V VGSS:-20/+10
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
SSM3J374R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-30V VGSS:-20/+10
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Qualification: AEC-Q101
Description: SMOS P-CH VDSS:-30V VGSS:-20/+10
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 8694 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
38+ | 0.47 EUR |
100+ | 0.28 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
SSM3J371R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.16 EUR |
9000+ | 0.14 EUR |
SSM3J371R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
Description: SMOS P-CH VDSS:-20V VGSS:-8/+6V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 15356 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
38+ | 0.48 EUR |
100+ | 0.29 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
SSM3J168F,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 400MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Description: MOSFET P-CH 60V 400MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
6000+ | 0.15 EUR |
SSM3J378R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -20V -6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: AECQ MOSFET PCH -20V -6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.25 EUR |
6000+ | 0.23 EUR |
15000+ | 0.22 EUR |
SSM3J378R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -20V -6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Description: AECQ MOSFET PCH -20V -6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 23911 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.88 EUR |
25+ | 0.71 EUR |
100+ | 0.48 EUR |
500+ | 0.36 EUR |
1000+ | 0.27 EUR |
SSM3J66MFV,L3XHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA
Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA
Produkt ist nicht verfügbar
SSM3J66MFV,L3XHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA
Description: AUTO AEC-Q SS MOS P-CH LOW VOLTA
auf Bestellung 7876 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
36+ | 0.49 EUR |
100+ | 0.28 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
SSM3J168F,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
SSM3J168F,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
Description: SMOS LOW RON VDS:-60V VGSS:+10/-
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: S-Mini
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9878 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
31+ | 0.59 EUR |
100+ | 0.35 EUR |
500+ | 0.33 EUR |
1000+ | 0.22 EUR |
SSM3J356R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Produkt ist nicht verfügbar
SSM3J356R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: AECQ MOSFET PCH -60V -2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Produkt ist nicht verfügbar
SSM3J351R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.34 EUR |
6000+ | 0.33 EUR |
9000+ | 0.3 EUR |
SSM3J351R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
Description: AECQ MOSFET PCH -60V -3.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 15688 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.02 EUR |
21+ | 0.87 EUR |
100+ | 0.61 EUR |
500+ | 0.47 EUR |
1000+ | 0.38 EUR |
TC78H651FNG(O,EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 1.02 EUR |
TC78H651FNG(O,EL) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRIVER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Operating Temperature: -40°C ~ 105°C
Output Configuration: Half Bridge (4)
Applications: General Purpose
Technology: DMOS
Voltage - Load: 1.8V ~ 6V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 5994 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.41 EUR |
10+ | 2.15 EUR |
25+ | 2.04 EUR |
100+ | 1.68 EUR |
250+ | 1.57 EUR |
500+ | 1.39 EUR |
1000+ | 1.09 EUR |
TB62269FTAG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 32VQFN
Description: IC MOTOR DRIVER 32VQFN
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 2.2 EUR |
TB62269FTAG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 32VQFN
Description: IC MOTOR DRIVER 32VQFN
auf Bestellung 4040 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.58 EUR |
10+ | 4.11 EUR |
25+ | 3.88 EUR |
100+ | 3.31 EUR |
250+ | 3.1 EUR |
500+ | 2.72 EUR |
1000+ | 2.25 EUR |
GT20N135SRA,S1E |
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1350V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: -, 700µJ (off)
Test Condition: 300V, 40A, 39Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 312 W
Description: IGBT 1350V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247
Switching Energy: -, 700µJ (off)
Test Condition: 300V, 40A, 39Ohm, 15V
Gate Charge: 185 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 312 W
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.21 EUR |
10+ | 4.69 EUR |
SSM3K56FS,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 4902000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.075 EUR |
6000+ | 0.071 EUR |
9000+ | 0.068 EUR |
SSM3K56FS,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
Description: MOSFET N-CH 20V 800MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 4904911 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 0.4 EUR |
61+ | 0.29 EUR |
121+ | 0.15 EUR |
500+ | 0.12 EUR |
1000+ | 0.089 EUR |
SSM6K810R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.42 EUR |
SSM6K810R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5945 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.09 EUR |
19+ | 0.95 EUR |
100+ | 0.66 EUR |
500+ | 0.55 EUR |
1000+ | 0.47 EUR |
SSM6J808R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SSM6J808R,LXHF |
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTO AEC-Q SS MOS P-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2614 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.23 EUR |
17+ | 1.07 EUR |
100+ | 0.74 EUR |
500+ | 0.62 EUR |
1000+ | 0.53 EUR |
TCR2EN33,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EN33,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.3V IOUT=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
auf Bestellung 981 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
35+ | 0.51 EUR |
39+ | 0.46 EUR |
100+ | 0.32 EUR |
250+ | 0.27 EUR |
500+ | 0.22 EUR |
TCR2LN33,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.3V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.3V I=200MA
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2LN33,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=3.3V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Description: LDO REG VOUT=3.3V I=200MA
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
auf Bestellung 8964 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
35+ | 0.51 EUR |
39+ | 0.46 EUR |
100+ | 0.32 EUR |
250+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
2500+ | 0.15 EUR |
5000+ | 0.14 EUR |
TCR3RM33A,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 33V 300MA 4DFNC
Description: LDO REG 33V 300MA 4DFNC
Produkt ist nicht verfügbar
TCR3RM33A,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 33V 300MA 4DFNC
Description: LDO REG 33V 300MA 4DFNC
auf Bestellung 6356 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.86 EUR |
25+ | 0.7 EUR |
28+ | 0.64 EUR |
100+ | 0.48 EUR |
250+ | 0.43 EUR |
500+ | 0.36 EUR |
1000+ | 0.27 EUR |
2500+ | 0.25 EUR |
5000+ | 0.23 EUR |
TCR3UF33A,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: (LDO) LINEAR VOLTAGE REG, VIN: 6
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
Description: (LDO) LINEAR VOLTAGE REG, VIN: 6
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.19 EUR |
6000+ | 0.18 EUR |
TCR3UF33A,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: (LDO) LINEAR VOLTAGE REG, VIN: 6
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
Description: (LDO) LINEAR VOLTAGE REG, VIN: 6
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.287V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 9445 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
33+ | 0.54 EUR |
36+ | 0.49 EUR |
100+ | 0.37 EUR |
250+ | 0.33 EUR |
500+ | 0.28 EUR |
1000+ | 0.21 EUR |
SSM6G18NU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A 6UDFN
Description: MOSFET P-CH 20V 2A 6UDFN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)SSM6G18NU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 2A 6UDFN
Description: MOSFET P-CH 20V 2A 6UDFN
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)SSM5H08TU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.5A UFV
Description: MOSFET N-CH 20V 1.5A UFV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)SSM5H08TU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.5A UFV
Description: MOSFET N-CH 20V 1.5A UFV
auf Bestellung 5971 Stücke:
Lieferzeit 10-14 Tag (e)TCD1205DG(8Z,W) |
Hersteller: Toshiba Semiconductor and Storage
Description: CCD IMAGE SENSOR INTEGRATED CIRC
Description: CCD IMAGE SENSOR INTEGRATED CIRC
Produkt ist nicht verfügbar
DF2B5M5CT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Produkt ist nicht verfügbar
DF2B5M5CT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
auf Bestellung 9627 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
31+ | 0.57 EUR |
100+ | 0.32 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
5000+ | 0.13 EUR |
7UL1T04FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: LOGIC, INVERTER WITH LEVEL SHIFT
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: LOGIC, INVERTER WITH LEVEL SHIFT
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
7UL1T04FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: LOGIC, INVERTER WITH LEVEL SHIFT
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: LOGIC, INVERTER WITH LEVEL SHIFT
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.1V ~ 0.4V
Input Logic Level - Low: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 1632 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
36+ | 0.5 EUR |
41+ | 0.44 EUR |
100+ | 0.28 EUR |
250+ | 0.23 EUR |
500+ | 0.19 EUR |
1000+ | 0.14 EUR |
7UL1G14FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1-INP USV
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1-INP USV
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.1 EUR |
7UL1G14FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1-INP USV
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1-INP USV
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: USV
Input Logic Level - High: 0.73V ~ 2.14V
Input Logic Level - Low: 0.18V ~ 0.96V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 11526 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.55 EUR |
44+ | 0.41 EUR |
50+ | 0.36 EUR |
100+ | 0.23 EUR |
250+ | 0.19 EUR |
500+ | 0.15 EUR |
1000+ | 0.12 EUR |
DF2S6M5CT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Produkt ist nicht verfügbar
DF2S6M5CT,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
Description: UNIDIRECTIONAL ESD DIODE VRWM:5.
auf Bestellung 9770 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
37+ | 0.48 EUR |
100+ | 0.27 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
5000+ | 0.11 EUR |
TLP3475SRHA4(TPE |
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
500+ | 20.22 EUR |
TLP3475SRHA4(TPE |
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 1772 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 34.76 EUR |
10+ | 26.22 EUR |
100+ | 22.02 EUR |
TLP3412SRHA4(TPE |
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
500+ | 20.22 EUR |
TLP3412SRHA4(TPE |
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 250MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 16-LDFN
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 250 mA
Supplier Device Package: S-VSON16T (2x6.25)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
auf Bestellung 1763 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 34.76 EUR |
10+ | 26.22 EUR |
100+ | 22.02 EUR |
GT30N135SRA,S1E |
Hersteller: Toshiba Semiconductor and Storage
Description: IGBT 1350V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
Supplier Device Package: TO-247
Switching Energy: -, 1.3mJ (off)
Test Condition: 300V, 60A, 39Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 348 W
Description: IGBT 1350V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 60A
Supplier Device Package: TO-247
Switching Energy: -, 1.3mJ (off)
Test Condition: 300V, 60A, 39Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 348 W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)74VHC9273FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 100 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 100 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Produkt ist nicht verfügbar
74VHC9273FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 100 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 100 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 12.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 2049 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 0.9 EUR |
25+ | 0.72 EUR |
27+ | 0.66 EUR |
100+ | 0.49 EUR |
250+ | 0.45 EUR |
500+ | 0.37 EUR |
1000+ | 0.28 EUR |
74VHCV574FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.27 EUR |
74VHCV574FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
27+ | 0.66 EUR |
29+ | 0.62 EUR |
100+ | 0.5 EUR |
250+ | 0.46 EUR |
500+ | 0.39 EUR |
1000+ | 0.3 EUR |
TB9051FTG,EL |
Hersteller: Toshiba Semiconductor and Storage
Description: MOTOR CONTROLLER SINGLE CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 28-PowerQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Technology: Bi-CMOS
Supplier Device Package: 28-QFN (6x6)
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Description: MOTOR CONTROLLER SINGLE CHANNEL
Packaging: Tape & Reel (TR)
Package / Case: 28-PowerQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Technology: Bi-CMOS
Supplier Device Package: 28-QFN (6x6)
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar