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TCR2LN30,LSF(SE TCR2LN30,LSF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN30,LSF(SE TCR2LN30,LSF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
auf Bestellung 9500 Stücke:
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63+0.28 EUR
96+0.18 EUR
109+0.16 EUR
128+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 63
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TCR2EN30,LF(SE TCR2EN30,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
auf Bestellung 10000 Stücke:
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10000+0.1 EUR
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TCR2EN30,LF(SE TCR2EN30,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
auf Bestellung 19866 Stücke:
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63+0.28 EUR
96+0.18 EUR
109+0.16 EUR
128+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 63
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TCR2LN30,LF(SE TCR2LN30,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN30,LF(SE TCR2LN30,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
auf Bestellung 9990 Stücke:
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63+0.28 EUR
96+0.18 EUR
109+0.16 EUR
128+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 63
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SSM3K376R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=60463&prodName=SSM3K376R Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
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6000+0.13 EUR
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SSM3K376R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=60463&prodName=SSM3K376R Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7792 Stücke:
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37+0.48 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
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TB62216FTG,C8,EL TB62216FTG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=13004&prodName=TB62216FTG Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 2000 Stücke:
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2000+1.98 EUR
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TB62216FTG,C8,EL TB62216FTG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=13004&prodName=TB62216FTG Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 3859 Stücke:
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5+4.21 EUR
10+3.78 EUR
25+3.56 EUR
100+3.04 EUR
250+2.85 EUR
500+2.49 EUR
1000+2.07 EUR
Mindestbestellmenge: 5
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TB67S128FTG(O,EL) TB67S128FTG(O,EL) Toshiba Semiconductor and Storage TB67S128FTG_datasheet_en_20210907.pdf?did=61073&prodName=TB67S128FTG Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 0V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Step Resolution: 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
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TB67S128FTG(O,EL) TB67S128FTG(O,EL) Toshiba Semiconductor and Storage TB67S128FTG_datasheet_en_20210907.pdf?did=61073&prodName=TB67S128FTG Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 0V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Step Resolution: 1/8, 1/16, 1/32
auf Bestellung 7889 Stücke:
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2+14.87 EUR
10+10.03 EUR
25+8.76 EUR
100+7.33 EUR
250+6.62 EUR
500+6.48 EUR
Mindestbestellmenge: 2
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TPCA8128,L1Q TPCA8128,L1Q Toshiba Semiconductor and Storage Description: MOSFET P-CH 30V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Produkt ist nicht verfügbar
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DF2B6M4BSL,L3F DF2B6M4BSL,L3F Toshiba Semiconductor and Storage DF2B6M4BSL_datasheet_en_20211202.pdf?did=140645&prodName=DF2B6M4BSL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B6M4BSL,L3F DF2B6M4BSL,L3F Toshiba Semiconductor and Storage DF2B6M4BSL_datasheet_en_20211202.pdf?did=140645&prodName=DF2B6M4BSL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 3840 Stücke:
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50+0.35 EUR
81+0.22 EUR
159+0.11 EUR
500+0.1 EUR
1000+0.098 EUR
2000+0.096 EUR
Mindestbestellmenge: 50
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TC7SZ05FU,LJ(CT TC7SZ05FU,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=54754&prodName=TC7SZ05FU Description: IC INVERTER 1CH 1-INP 5SSOP
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 2853 Stücke:
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35+0.51 EUR
60+0.29 EUR
74+0.24 EUR
100+0.18 EUR
250+0.15 EUR
500+0.13 EUR
1000+0.11 EUR
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TCR3DM135,LF(SE TCR3DM135,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
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10000+0.12 EUR
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TCR3DM135,LF(SE TCR3DM135,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
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56+0.32 EUR
81+0.22 EUR
92+0.19 EUR
108+0.16 EUR
250+0.15 EUR
500+0.14 EUR
2500+0.13 EUR
5000+0.12 EUR
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TK16J60W5,S1VQ TK16J60W5,S1VQ Toshiba Semiconductor and Storage TK16J60W5_datasheet_en_20140225.pdf?did=14278&prodName=TK16J60W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 32 Stücke:
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10+8.22 EUR
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TK16J60W,S1VE TK16J60W,S1VE Toshiba Semiconductor and Storage docget.jsp?did=13522&prodName=TK16J60W Description: X35 PB-F POWER MOSFET TRANSISTOR
Produkt ist nicht verfügbar
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TB9101FNG,EL TB9101FNG,EL Toshiba Semiconductor and Storage docget.jsp?did=15508&prodName=TB9101FNG Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
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TB9101FNG,EL TB9101FNG,EL Toshiba Semiconductor and Storage docget.jsp?did=15508&prodName=TB9101FNG Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Produkt ist nicht verfügbar
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TCR5AM33,LF TCR5AM33,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 3.3V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM33,LF TCR5AM33,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 3.3V 500MA 5DFNB
auf Bestellung 629 Stücke:
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22+0.83 EUR
27+0.68 EUR
29+0.62 EUR
100+0.46 EUR
250+0.42 EUR
500+0.35 EUR
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TCR5AM105A,LF TCR5AM105A,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1.05V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM105A,LF TCR5AM105A,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1.05V 500MA 5DFNB
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TCR5AM18,LF TCR5AM18,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1.8V 500MA 5DFNB
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TCR5AM18,LF TCR5AM18,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1.8V 500MA 5DFNB
Produkt ist nicht verfügbar
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TLP734(D4-C172,F) TLP734(D4-C172,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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SSM6J422TU,LXHF SSM6J422TU,LXHF Toshiba Semiconductor and Storage SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J422TU,LXHF SSM6J422TU,LXHF Toshiba Semiconductor and Storage SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 2567 Stücke:
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25+0.72 EUR
29+0.62 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.28 EUR
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SSM6L820R,LXHF SSM6L820R,LXHF Toshiba Semiconductor and Storage SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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3000+0.34 EUR
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SSM6L820R,LXHF SSM6L820R,LXHF Toshiba Semiconductor and Storage SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5983 Stücke:
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20+0.9 EUR
23+0.78 EUR
100+0.54 EUR
500+0.45 EUR
1000+0.38 EUR
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4N26(SHORT,F) 4N26(SHORT,F) Toshiba Semiconductor and Storage 4N25,25A,26,27,28%20Short.pdf Description: OPTOISO 2.5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 200µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
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4N26(SHORT-LF5,F) Toshiba Semiconductor and Storage 4N25,25A,26,27,28%20Short.pdf Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
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TB6633AFNG,EL TB6633AFNG,EL Toshiba Semiconductor and Storage docget.jsp?did=29842&prodName=TB6633AFNG Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
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TLP2261(D4-TP4,E TLP2261(D4-TP4,E Toshiba Semiconductor and Storage docget.jsp?did=53692&prodName=TLP2261 Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
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TLP2261(D4-LF4,E TLP2261(D4-LF4,E Toshiba Semiconductor and Storage docget.jsp?did=53692&prodName=TLP2261 Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
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SSM6K819R,LXHF SSM6K819R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=65097&prodName=SSM6K819R Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.66 EUR
Mindestbestellmenge: 3000
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SSM6K819R,LXHF SSM6K819R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=65097&prodName=SSM6K819R Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3028 Stücke:
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8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.75 EUR
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TPH9R00CQH,LQ TPH9R00CQH,LQ Toshiba Semiconductor and Storage docget.jsp?did=70667&prodName=TPH9R00CQH Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
Produkt ist nicht verfügbar
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TPH9R00CQH,LQ TPH9R00CQH,LQ Toshiba Semiconductor and Storage docget.jsp?did=70667&prodName=TPH9R00CQH Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
auf Bestellung 3442 Stücke:
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5+3.96 EUR
10+2.73 EUR
100+1.92 EUR
500+1.6 EUR
1000+1.43 EUR
2000+1.37 EUR
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RN2116,LXHF(CT RN2116,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18859&prodName=RN2116 Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
Produkt ist nicht verfügbar
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RN2116,LXHF(CT RN2116,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18859&prodName=RN2116 Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
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RN2116,LF(CT RN2116,LF(CT Toshiba Semiconductor and Storage RN2114-18.pdf Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN2116,LF(CT RN2116,LF(CT Toshiba Semiconductor and Storage RN2114-18.pdf Description: TRANS PREBIAS PNP 50V 0.1A SSM
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RN1108,LF(CT RN1108,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18750&prodName=RN1108 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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RN1108,LF(CT RN1108,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18750&prodName=RN1108 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2865 Stücke:
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50+0.35 EUR
61+0.29 EUR
114+0.16 EUR
500+0.1 EUR
1000+0.069 EUR
Mindestbestellmenge: 50
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RN2106MFV,L3F(CT RN2106MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2106MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN2106MFV,L3F(CT RN2106MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2106MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
auf Bestellung 3033 Stücke:
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53+0.33 EUR
58+0.31 EUR
106+0.17 EUR
500+0.1 EUR
1000+0.07 EUR
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RN2106,LF(CT RN2106,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2106 Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 3000 Stücke:
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3000+0.067 EUR
Mindestbestellmenge: 3000
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RN2106,LF(CT RN2106,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2106 Description: TRANS PREBIAS PNP 50V 0.1A SSM
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1SS272TE85LF 1SS272TE85LF Toshiba Semiconductor and Storage 1SS272_datasheet_en_20221020.pdf?did=3285&prodName=1SS272 Description: DIODE ARRAY GP 80V 100MA SC-61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 9819 Stücke:
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39+0.46 EUR
59+0.3 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
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TLP781(D4GRT6-TC,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP781(D4TELS-T6,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP781(D4-Y,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP781(D4-Y-TP6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(D4-GRH,E) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(BL-LF6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(D4-FUN,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TCR2LN30,LSF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN30,LSF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN30,LSF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN30,LSF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
96+0.18 EUR
109+0.16 EUR
128+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
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TCR2EN30,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
TCR2EN30,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.1 EUR
Mindestbestellmenge: 10000
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TCR2EN30,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
TCR2EN30,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
auf Bestellung 19866 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
96+0.18 EUR
109+0.16 EUR
128+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 63
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TCR2LN30,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN30,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN30,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN30,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
96+0.18 EUR
109+0.16 EUR
128+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
5000+0.1 EUR
Mindestbestellmenge: 63
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SSM3K376R,LXHF docget.jsp?did=60463&prodName=SSM3K376R
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
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SSM3K376R,LXHF docget.jsp?did=60463&prodName=SSM3K376R
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 7792 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
37+0.48 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
Mindestbestellmenge: 27
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TB62216FTG,C8,EL docget.jsp?did=13004&prodName=TB62216FTG
TB62216FTG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 2000 Stücke:
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Anzahl Preis
2000+1.98 EUR
Mindestbestellmenge: 2000
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TB62216FTG,C8,EL docget.jsp?did=13004&prodName=TB62216FTG
TB62216FTG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 38V
Supplier Device Package: 48-QFN (7x7)
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 3859 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
10+3.78 EUR
25+3.56 EUR
100+3.04 EUR
250+2.85 EUR
500+2.49 EUR
1000+2.07 EUR
Mindestbestellmenge: 5
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TB67S128FTG(O,EL) TB67S128FTG_datasheet_en_20210907.pdf?did=61073&prodName=TB67S128FTG
TB67S128FTG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 0V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Step Resolution: 1/8, 1/16, 1/32
Produkt ist nicht verfügbar
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TB67S128FTG(O,EL) TB67S128FTG_datasheet_en_20210907.pdf?did=61073&prodName=TB67S128FTG
TB67S128FTG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Packaging: Cut Tape (CT)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 0V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 6.5V ~ 44V
Supplier Device Package: 64-VQFN (9x9)
Motor Type - Stepper: Bipolar
Step Resolution: 1/8, 1/16, 1/32
auf Bestellung 7889 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.87 EUR
10+10.03 EUR
25+8.76 EUR
100+7.33 EUR
250+6.62 EUR
500+6.48 EUR
Mindestbestellmenge: 2
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TPCA8128,L1Q
TPCA8128,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 34A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Produkt ist nicht verfügbar
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DF2B6M4BSL,L3F DF2B6M4BSL_datasheet_en_20211202.pdf?did=140645&prodName=DF2B6M4BSL
DF2B6M4BSL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B6M4BSL,L3F DF2B6M4BSL_datasheet_en_20211202.pdf?did=140645&prodName=DF2B6M4BSL
DF2B6M4BSL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 3840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
81+0.22 EUR
159+0.11 EUR
500+0.1 EUR
1000+0.098 EUR
2000+0.096 EUR
Mindestbestellmenge: 50
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TC7SZ05FU,LJ(CT docget.jsp?did=54754&prodName=TC7SZ05FU
TC7SZ05FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Features: Open Drain
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 2853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
60+0.29 EUR
74+0.24 EUR
100+0.18 EUR
250+0.15 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 35
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TCR3DM135,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM135,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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TCR3DM135,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM135,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 19975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
81+0.22 EUR
92+0.19 EUR
108+0.16 EUR
250+0.15 EUR
500+0.14 EUR
2500+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 56
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TK16J60W5,S1VQ TK16J60W5_datasheet_en_20140225.pdf?did=14278&prodName=TK16J60W5
TK16J60W5,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.15 EUR
10+8.22 EUR
Mindestbestellmenge: 2
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TK16J60W,S1VE docget.jsp?did=13522&prodName=TK16J60W
TK16J60W,S1VE
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Produkt ist nicht verfügbar
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TB9101FNG,EL docget.jsp?did=15508&prodName=TB9101FNG
TB9101FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Produkt ist nicht verfügbar
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TB9101FNG,EL docget.jsp?did=15508&prodName=TB9101FNG
TB9101FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Produkt ist nicht verfügbar
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TCR5AM33,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM33,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM33,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM33,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 500MA 5DFNB
auf Bestellung 629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
27+0.68 EUR
29+0.62 EUR
100+0.46 EUR
250+0.42 EUR
500+0.35 EUR
Mindestbestellmenge: 22
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TCR5AM105A,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM105A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM105A,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM105A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM18,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM18,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM18,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM18,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 5DFNB
Produkt ist nicht verfügbar
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TLP734(D4-C172,F)
TLP734(D4-C172,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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SSM6J422TU,LXHF SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU
SSM6J422TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Produkt ist nicht verfügbar
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SSM6J422TU,LXHF SSM6J422TU_datasheet_en_20210528.pdf?did=61137&prodName=SSM6J422TU
SSM6J422TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 2567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
29+0.62 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.28 EUR
Mindestbestellmenge: 25
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SSM6L820R,LXHF SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R
SSM6L820R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.34 EUR
Mindestbestellmenge: 3000
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SSM6L820R,LXHF SSM6L820R_datasheet_en_20210603.pdf?did=63678&prodName=SSM6L820R
SSM6L820R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V/20V 4A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta)
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
23+0.78 EUR
100+0.54 EUR
500+0.45 EUR
1000+0.38 EUR
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4N26(SHORT,F) 4N25,25A,26,27,28%20Short.pdf
4N26(SHORT,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 200µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
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4N26(SHORT-LF5,F) 4N25,25A,26,27,28%20Short.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
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TB6633AFNG,EL docget.jsp?did=29842&prodName=TB6633AFNG
TB6633AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 5.5V-22V 24SSOP
Produkt ist nicht verfügbar
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TLP2261(D4-TP4,E docget.jsp?did=53692&prodName=TLP2261
TLP2261(D4-TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Produkt ist nicht verfügbar
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TLP2261(D4-LF4,E docget.jsp?did=53692&prodName=TLP2261
TLP2261(D4-LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: HIGH SPEED LOGIC OUTPUT OPTOCOUP
Produkt ist nicht verfügbar
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SSM6K819R,LXHF docget.jsp?did=65097&prodName=SSM6K819R
SSM6K819R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.66 EUR
Mindestbestellmenge: 3000
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SSM6K819R,LXHF docget.jsp?did=65097&prodName=SSM6K819R
SSM6K819R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3028 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
12+1.56 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.75 EUR
Mindestbestellmenge: 8
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TPH9R00CQH,LQ docget.jsp?did=70667&prodName=TPH9R00CQH
TPH9R00CQH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
Produkt ist nicht verfügbar
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TPH9R00CQH,LQ docget.jsp?did=70667&prodName=TPH9R00CQH
TPH9R00CQH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
auf Bestellung 3442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.96 EUR
10+2.73 EUR
100+1.92 EUR
500+1.6 EUR
1000+1.43 EUR
2000+1.37 EUR
Mindestbestellmenge: 5
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RN2116,LXHF(CT docget.jsp?did=18859&prodName=RN2116
RN2116,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
Produkt ist nicht verfügbar
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RN2116,LXHF(CT docget.jsp?did=18859&prodName=RN2116
RN2116,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
Produkt ist nicht verfügbar
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RN2116,LF(CT RN2114-18.pdf
RN2116,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN2116,LF(CT RN2114-18.pdf
RN2116,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN1108,LF(CT docget.jsp?did=18750&prodName=RN1108
RN1108,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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RN1108,LF(CT docget.jsp?did=18750&prodName=RN1108
RN1108,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
61+0.29 EUR
114+0.16 EUR
500+0.1 EUR
1000+0.069 EUR
Mindestbestellmenge: 50
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RN2106MFV,L3F(CT docget.jsp?did=5883&prodName=RN2106MFV
RN2106MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN2106MFV,L3F(CT docget.jsp?did=5883&prodName=RN2106MFV
RN2106MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
auf Bestellung 3033 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
58+0.31 EUR
106+0.17 EUR
500+0.1 EUR
1000+0.07 EUR
2000+0.06 EUR
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RN2106,LF(CT docget.jsp?did=18841&prodName=RN2106
RN2106,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.067 EUR
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RN2106,LF(CT docget.jsp?did=18841&prodName=RN2106
RN2106,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
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1SS272TE85LF 1SS272_datasheet_en_20221020.pdf?did=3285&prodName=1SS272
1SS272TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-61B
Packaging: Cut Tape (CT)
Package / Case: SC-61AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-61B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 9819 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
59+0.3 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 39
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TLP781(D4GRT6-TC,F TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP781(D4TELS-T6,F TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP781(D4-Y,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP781(D4-Y-TP6,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(D4-GRH,E) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(BL-LF6,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(D4-FUN,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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