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MSZ16V,LF MSZ16V,LF Toshiba Semiconductor and Storage docget.jsp?did=155145&prodName=MSZ16V Description: TVS DIODE 16VWM 27VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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MSZ16V,LF MSZ16V,LF Toshiba Semiconductor and Storage docget.jsp?did=155145&prodName=MSZ16V Description: TVS DIODE 16VWM 27VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
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TK430A60F,S4X(S TK430A60F,S4X(S Toshiba Semiconductor and Storage TK430A60F_datasheet_en_20181120.pdf?did=63673&prodName=TK430A60F Description: MOSFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1.75mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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TK4K1A60F,S4X TK4K1A60F,S4X Toshiba Semiconductor and Storage TK4K1A60F_datasheet_en_20180925.pdf?did=61570&prodName=TK4K1A60F Description: X35 PB-F POWER MOSFET TRANSISTOR
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 190µA
Power Dissipation (Max): 30W (Tc)
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4N27(SHORT-TP1,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
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4N27(SHORT,F) 4N27(SHORT,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
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RN2307,LF RN2307,LF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN2307,LF RN2307,LF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
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112+0.19 EUR
159+0.13 EUR
238+0.088 EUR
500+0.067 EUR
1000+0.06 EUR
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RN2307,LXHF RN2307,LXHF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
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3000+0.084 EUR
6000+0.083 EUR
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RN2307,LXHF RN2307,LXHF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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DF2B5BSL,L3F DF2B5BSL,L3F Toshiba Semiconductor and Storage docget.jsp?did=63674&prodName=DF2B5BSL Description: TVS DIODE 3.3VWM 14VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
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10000+0.062 EUR
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DF2B5BSL,L3F DF2B5BSL,L3F Toshiba Semiconductor and Storage docget.jsp?did=63674&prodName=DF2B5BSL Description: TVS DIODE 3.3VWM 14VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
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56+0.38 EUR
91+0.23 EUR
129+0.17 EUR
149+0.14 EUR
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DF2B7PCT,L3F DF2B7PCT,L3F Toshiba Semiconductor and Storage docget.jsp?did=69072&prodName=DF2B7PCT Description: TVS DIODE 5.5VWM 22VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
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10000+0.093 EUR
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DF2B7PCT,L3F DF2B7PCT,L3F Toshiba Semiconductor and Storage docget.jsp?did=69072&prodName=DF2B7PCT Description: TVS DIODE 5.5VWM 22VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
auf Bestellung 203183 Stücke:
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39+0.55 EUR
63+0.33 EUR
88+0.24 EUR
101+0.2 EUR
500+0.15 EUR
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DF2B5PCT,L3F DF2B5PCT,L3F Toshiba Semiconductor and Storage docget.jsp?did=69070&prodName=DF2B5PCT Description: TVS DIODE 3.6VWM 22VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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DF2B5PCT,L3F DF2B5PCT,L3F Toshiba Semiconductor and Storage docget.jsp?did=69070&prodName=DF2B5PCT Description: TVS DIODE 3.6VWM 22VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
auf Bestellung 4196 Stücke:
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39+0.55 EUR
63+0.33 EUR
88+0.24 EUR
101+0.2 EUR
500+0.15 EUR
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DF2S5M5CT,L3F DF2S5M5CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=70609&prodName=DF2S5M5CT Description: TVS DIODE 3.3VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
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10000+0.13 EUR
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DF2S5M5CT,L3F DF2S5M5CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=70609&prodName=DF2S5M5CT Description: TVS DIODE 3.3VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
auf Bestellung 19737 Stücke:
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49+0.43 EUR
68+0.31 EUR
100+0.27 EUR
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DF2B18FU,H3XHF DF2B18FU,H3XHF Toshiba Semiconductor and Storage docget.jsp?did=29926&prodName=DF2B18FU Description: TVS DIODE 12VWM 33VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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DF2B18FU,H3XHF DF2B18FU,H3XHF Toshiba Semiconductor and Storage docget.jsp?did=29926&prodName=DF2B18FU Description: TVS DIODE 12VWM 33VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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113+0.19 EUR
500+0.17 EUR
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TLE4276SV Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO ADJ TO220
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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TCKE800NA,RF TCKE800NA,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE800NA Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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4000+1.13 EUR
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TCKE800NA,RF TCKE800NA,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE800NA Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
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12+1.88 EUR
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100+1.51 EUR
250+1.42 EUR
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TCKE800NL,RF TCKE800NL,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE800NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
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4000+1.25 EUR
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TCKE800NL,RF TCKE800NL,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE800NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
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9+2.57 EUR
12+1.88 EUR
25+1.7 EUR
100+1.51 EUR
250+1.42 EUR
500+1.36 EUR
1000+1.31 EUR
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TCKE712BNL,RF TCKE712BNL,RF Toshiba Semiconductor and Storage docget.jsp?did=70201&prodName=TCKE712BNL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
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4000+1.57 EUR
8000+1.54 EUR
12000+1.52 EUR
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TCKE712BNL,RF TCKE712BNL,RF Toshiba Semiconductor and Storage docget.jsp?did=70201&prodName=TCKE712BNL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 18005 Stücke:
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10+2.33 EUR
25+2.12 EUR
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250+1.77 EUR
500+1.7 EUR
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TCKE812NA,RF TCKE812NA,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE812NA Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCKE812NA,RF TCKE812NA,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE812NA Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCKE812NL,RF TCKE812NL,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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4000+1.3 EUR
8000+1.24 EUR
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TCKE812NL,RF TCKE812NL,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
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TK62Z60X,S1F TK62Z60X,S1F Toshiba Semiconductor and Storage TK62Z60X_datasheet_en_20171206.pdf?did=30416&prodName=TK62Z60X Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
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TLX9188(GBTPL,F TLX9188(GBTPL,F Toshiba Semiconductor and Storage TLX9188_datasheet_en_20210913.pdf?did=139677&prodName=TLX9188 Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
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TLX9188(GBTPL,F TLX9188(GBTPL,F Toshiba Semiconductor and Storage TLX9188_datasheet_en_20210913.pdf?did=139677&prodName=TLX9188 Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
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500+3.18 EUR
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MQ01ACF032 MQ01ACF032 Toshiba Semiconductor and Storage cHDD-MQ01ACFxxx-Product-Overview.pdf Description: 320GB 2.5" SATA III 5V 7.2K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 320GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
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1+151.99 EUR
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DF2B6M5CT,L3F Toshiba Semiconductor and Storage DF2B6M5CT_datasheet_en_20200807.pdf?did=70074&prodName=DF2B6M5CT Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Power Line Protection: No
Power - Peak Pulse: 37W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 5.5V
Bidirectional Channels: 1
Supplier Device Package: CST2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DF2B6M5CT,L3F Toshiba Semiconductor and Storage DF2B6M5CT_datasheet_en_20200807.pdf?did=70074&prodName=DF2B6M5CT Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Power Line Protection: No
Power - Peak Pulse: 37W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 5.5V
Bidirectional Channels: 1
Supplier Device Package: CST2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
auf Bestellung 8575 Stücke:
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28+0.75 EUR
46+0.46 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.15 EUR
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TCR2EE39,LM(CT TCR2EE39,LM(CT Toshiba Semiconductor and Storage TCR2EE39_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE39 Description: IC REG LINEAR 3.9V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.9V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 3522 Stücke:
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29+0.74 EUR
49+0.43 EUR
60+0.36 EUR
100+0.26 EUR
250+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
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TB9080FG Toshiba Semiconductor and Storage TB9080FG_datasheet_en_20190701.pdf?did=65818&prodName=TB9080FG Description: AUTOMOTIVE MOTOR PRE-DRIVER
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 7V ~ 18V
Technology: Bipolar
Supplier Device Package: 64-LQFP (10x10)
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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HN1C01FE-GR,LXHF HN1C01FE-GR,LXHF Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: TRANS 2NPN DUAL 50V 150MA ES6
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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4000+0.13 EUR
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HN1C01FE-GR,LXHF HN1C01FE-GR,LXHF Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: TRANS 2NPN DUAL 50V 150MA ES6
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Grade: Automotive
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 7452 Stücke:
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33+0.65 EUR
53+0.4 EUR
100+0.25 EUR
500+0.19 EUR
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TLP7930(D4-TP1,F TLP7930(D4-TP1,F Toshiba Semiconductor and Storage TLP7930_datasheet_en_20160509.pdf?did=35831&prodName=TLP7930 Description: IC ISOLATED MODULE 16BIT
Number of Channels: 1
Part Status: Active
Supplier Device Package: 8-SMD
Voltage Supply Source: Dual Supply
Resolution (Bits): 16 b
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Data Interface: Serial
Type: Isolated Module
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP7930(D4-TP1,F TLP7930(D4-TP1,F Toshiba Semiconductor and Storage TLP7930_datasheet_en_20160509.pdf?did=35831&prodName=TLP7930 Description: IC ISOLATED MODULE 16BIT
Number of Channels: 1
Part Status: Active
Supplier Device Package: 8-SMD
Voltage Supply Source: Dual Supply
Resolution (Bits): 16 b
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Data Interface: Serial
Type: Isolated Module
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TA48L018F(TE12L,F) TA48L018F(TE12L,F) Toshiba Semiconductor and Storage TA48L0xxF.pdf Description: IC REG LINEAR 1.8V 150MA PW-MINI
Produkt ist nicht verfügbar
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TA48L018F(TE12L,F) TA48L018F(TE12L,F) Toshiba Semiconductor and Storage TA48L0xxF.pdf Description: IC REG LINEAR 1.8V 150MA PW-MINI
auf Bestellung 16 Stücke:
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15+1.44 EUR
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RN1707JE(TE85L,F) RN1707JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19124&prodName=RN1707JE Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
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4000+0.15 EUR
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RN1707JE(TE85L,F) RN1707JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19124&prodName=RN1707JE Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
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25+0.83 EUR
34+0.62 EUR
100+0.36 EUR
500+0.24 EUR
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TK3R3E08QM,S1X TK3R3E08QM,S1X Toshiba Semiconductor and Storage Description: UMOS10 TO-220AB 80V 3.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
auf Bestellung 163 Stücke:
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5+4.24 EUR
50+3.4 EUR
100+2.81 EUR
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SSM6N16FE,L3F SSM6N16FE,L3F Toshiba Semiconductor and Storage SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
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8000+0.12 EUR
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SSM6N16FE,L3F SSM6N16FE,L3F Toshiba Semiconductor and Storage SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
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29+0.74 EUR
39+0.55 EUR
100+0.31 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.13 EUR
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DF5A5.6LJE,LM DF5A5.6LJE,LM Toshiba Semiconductor and Storage DF5A5.6LJE_datasheet_en_20140301.pdf?did=22263&prodName=DF5A5.6LJE Description: TVS DIODE ESV
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: ESV
Capacitance @ Frequency: 8pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
auf Bestellung 4000 Stücke:
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4000+0.069 EUR
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DF5A5.6LJE,LM DF5A5.6LJE,LM Toshiba Semiconductor and Storage DF5A5.6LJE_datasheet_en_20140301.pdf?did=22263&prodName=DF5A5.6LJE Description: TVS DIODE ESV
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: ESV
Capacitance @ Frequency: 8pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 6188 Stücke:
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44+0.48 EUR
70+0.3 EUR
113+0.19 EUR
500+0.13 EUR
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2000+0.11 EUR
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MSZ5V6,LF MSZ5V6,LF Toshiba Semiconductor and Storage docget.jsp?did=155145&prodName=MSZ5V6 Description: TVS DIODE 5.6VWM 9VC SMINI
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 155W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5.6V
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 125pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Supplier Device Package: S-Mini
auf Bestellung 6000 Stücke:
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3000+0.11 EUR
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MSZ5V6,LF MSZ5V6,LF Toshiba Semiconductor and Storage docget.jsp?did=155145&prodName=MSZ5V6 Description: TVS DIODE 5.6VWM 9VC SMINI
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 155W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5.6V
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 125pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Supplier Device Package: S-Mini
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39+0.55 EUR
62+0.35 EUR
87+0.24 EUR
100+0.21 EUR
500+0.15 EUR
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CEZ5V6,L3F CEZ5V6,L3F Toshiba Semiconductor and Storage docget.jsp?did=155995&prodName=CEZ5V6 Description: TVS DIODE 5.6VWM 9VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
Supplier Device Package: ESC
Produkt ist nicht verfügbar
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CEZ5V6,L3F CEZ5V6,L3F Toshiba Semiconductor and Storage docget.jsp?did=155995&prodName=CEZ5V6 Description: TVS DIODE 5.6VWM 9VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
Supplier Device Package: ESC
Produkt ist nicht verfügbar
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CUHZ5V6,H3F CUHZ5V6,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ5V6 Description: TVS DIODE 5.6VWM 5.7VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 860pF @ 1MHz
Current - Peak Pulse (10/1000µs): 91A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 1750W (1.75kW)
Power Line Protection: No
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3000+0.21 EUR
9000+0.18 EUR
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CUHZ5V6,H3F CUHZ5V6,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ5V6 Description: TVS DIODE 5.6VWM 5.7VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 860pF @ 1MHz
Current - Peak Pulse (10/1000µs): 91A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 1750W (1.75kW)
Power Line Protection: No
auf Bestellung 64500 Stücke:
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36+0.6 EUR
50+0.43 EUR
100+0.37 EUR
500+0.29 EUR
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TK090U65Z,RQ TK090U65Z,RQ Toshiba Semiconductor and Storage docget.jsp?did=69970&prodName=TK090U65Z Description: DTMOS VI TOLL PD=230W F=1MHZ
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Produkt ist nicht verfügbar
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TK090U65Z,RQ TK090U65Z,RQ Toshiba Semiconductor and Storage docget.jsp?did=69970&prodName=TK090U65Z Description: DTMOS VI TOLL PD=230W F=1MHZ
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 2118 Stücke:
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2+11.91 EUR
10+8 EUR
100+5.78 EUR
500+4.83 EUR
1000+4.82 EUR
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MSZ16V,LF docget.jsp?did=155145&prodName=MSZ16V
MSZ16V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
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MSZ16V,LF docget.jsp?did=155145&prodName=MSZ16V
MSZ16V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Voltage - Clamping (Max) @ Ipp: 27V (Typ)
Power - Peak Pulse: 200W
Power Line Protection: No
Produkt ist nicht verfügbar
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TK430A60F,S4X(S TK430A60F_datasheet_en_20181120.pdf?did=63673&prodName=TK430A60F
TK430A60F,S4X(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1.75mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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TK4K1A60F,S4X TK4K1A60F_datasheet_en_20180925.pdf?did=61570&prodName=TK4K1A60F
TK4K1A60F,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 190µA
Power Dissipation (Max): 30W (Tc)
auf Bestellung 82 Stücke:
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13+1.74 EUR
14+1.52 EUR
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4N27(SHORT-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
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4N27(SHORT,F)
4N27(SHORT,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
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RN2307,LF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2307,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN2307,LF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2307,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
auf Bestellung 2652 Stücke:
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AnzahlPrivatkunde
112+0.19 EUR
159+0.13 EUR
238+0.088 EUR
500+0.067 EUR
1000+0.06 EUR
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RN2307,LXHF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2307,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.084 EUR
6000+0.083 EUR
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RN2307,LXHF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2307,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
46+0.46 EUR
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DF2B5BSL,L3F docget.jsp?did=63674&prodName=DF2B5BSL
DF2B5BSL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.3VWM 14VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
10000+0.062 EUR
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DF2B5BSL,L3F docget.jsp?did=63674&prodName=DF2B5BSL
DF2B5BSL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.3VWM 14VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
auf Bestellung 18851 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
91+0.23 EUR
129+0.17 EUR
149+0.14 EUR
500+0.1 EUR
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DF2B7PCT,L3F docget.jsp?did=69072&prodName=DF2B7PCT
DF2B7PCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 22VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
auf Bestellung 190000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.093 EUR
30000+0.081 EUR
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DF2B7PCT,L3F docget.jsp?did=69072&prodName=DF2B7PCT
DF2B7PCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 22VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
auf Bestellung 203183 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
63+0.33 EUR
88+0.24 EUR
101+0.2 EUR
500+0.15 EUR
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DF2B5PCT,L3F docget.jsp?did=69070&prodName=DF2B5PCT
DF2B5PCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 22VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B5PCT,L3F docget.jsp?did=69070&prodName=DF2B5PCT
DF2B5PCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 22VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
auf Bestellung 4196 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
63+0.33 EUR
88+0.24 EUR
101+0.2 EUR
500+0.15 EUR
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DF2S5M5CT,L3F docget.jsp?did=70609&prodName=DF2S5M5CT
DF2S5M5CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.3VWM 15VC CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
auf Bestellung 10000 Stücke:
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10000+0.13 EUR
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DF2S5M5CT,L3F docget.jsp?did=70609&prodName=DF2S5M5CT
DF2S5M5CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.3VWM 15VC CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
auf Bestellung 19737 Stücke:
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30+0.71 EUR
49+0.43 EUR
68+0.31 EUR
100+0.27 EUR
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DF2B18FU,H3XHF docget.jsp?did=29926&prodName=DF2B18FU
DF2B18FU,H3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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3000+0.098 EUR
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DF2B18FU,H3XHF docget.jsp?did=29926&prodName=DF2B18FU
DF2B18FU,H3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: USC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5853 Stücke:
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40+0.52 EUR
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113+0.19 EUR
500+0.17 EUR
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TLE4276SV
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO ADJ TO220
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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TCKE800NA,RF docget.jsp?did=139443&prodName=TCKE800NA
TCKE800NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
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4000+1.13 EUR
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TCKE800NA,RF docget.jsp?did=139443&prodName=TCKE800NA
TCKE800NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 24675 Stücke:
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9+2.57 EUR
12+1.88 EUR
25+1.7 EUR
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250+1.42 EUR
500+1.36 EUR
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TCKE800NL,RF docget.jsp?did=139443&prodName=TCKE800NL
TCKE800NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.25 EUR
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TCKE800NL,RF docget.jsp?did=139443&prodName=TCKE800NL
TCKE800NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 5860 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.57 EUR
12+1.88 EUR
25+1.7 EUR
100+1.51 EUR
250+1.42 EUR
500+1.36 EUR
1000+1.31 EUR
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TCKE712BNL,RF docget.jsp?did=70201&prodName=TCKE712BNL
TCKE712BNL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.57 EUR
8000+1.54 EUR
12000+1.52 EUR
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TCKE712BNL,RF docget.jsp?did=70201&prodName=TCKE712BNL
TCKE712BNL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 18005 Stücke:
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AnzahlPrivatkunde
7+3.17 EUR
10+2.33 EUR
25+2.12 EUR
100+1.88 EUR
250+1.77 EUR
500+1.7 EUR
1000+1.69 EUR
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TCKE812NA,RF docget.jsp?did=139443&prodName=TCKE812NA
TCKE812NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCKE812NA,RF docget.jsp?did=139443&prodName=TCKE812NA
TCKE812NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCKE812NL,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE812NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 44000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.3 EUR
8000+1.24 EUR
12000+1.2 EUR
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TCKE812NL,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE812NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 53515 Stücke:
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5+4.44 EUR
10+2.86 EUR
25+2.44 EUR
100+1.96 EUR
250+1.74 EUR
500+1.59 EUR
1000+1.48 EUR
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TK62Z60X,S1F TK62Z60X_datasheet_en_20171206.pdf?did=30416&prodName=TK62Z60X
TK62Z60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 25 Stücke:
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1+36.57 EUR
10+33.62 EUR
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TLX9188(GBTPL,F TLX9188_datasheet_en_20210913.pdf?did=139677&prodName=TLX9188
TLX9188(GBTPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
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TLX9188(GBTPL,F TLX9188_datasheet_en_20210913.pdf?did=139677&prodName=TLX9188
TLX9188(GBTPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 2015 Stücke:
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3+7.2 EUR
10+4.86 EUR
100+3.65 EUR
500+3.18 EUR
1000+3.02 EUR
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MQ01ACF032 cHDD-MQ01ACFxxx-Product-Overview.pdf
MQ01ACF032
Hersteller: Toshiba Semiconductor and Storage
Description: 320GB 2.5" SATA III 5V 7.2K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 320GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
auf Bestellung 6 Stücke:
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1+151.99 EUR
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DF2B6M5CT,L3F DF2B6M5CT_datasheet_en_20200807.pdf?did=70074&prodName=DF2B6M5CT
Hersteller: Toshiba Semiconductor and Storage
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Power Line Protection: No
Power - Peak Pulse: 37W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 5.5V
Bidirectional Channels: 1
Supplier Device Package: CST2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DF2B6M5CT,L3F DF2B6M5CT_datasheet_en_20200807.pdf?did=70074&prodName=DF2B6M5CT
Hersteller: Toshiba Semiconductor and Storage
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Power Line Protection: No
Power - Peak Pulse: 37W
Voltage - Clamping (Max) @ Ipp: 15V
Voltage - Breakdown (Min): 5.5V
Bidirectional Channels: 1
Supplier Device Package: CST2
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOD-882
Packaging: Cut Tape (CT)
auf Bestellung 8575 Stücke:
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28+0.75 EUR
46+0.46 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.17 EUR
5000+0.15 EUR
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TCR2EE39,LM(CT TCR2EE39_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE39
TCR2EE39,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.9V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 3522 Stücke:
Lieferzeit 10-14 Tag (e)
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29+0.74 EUR
49+0.43 EUR
60+0.36 EUR
100+0.26 EUR
250+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
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TB9080FG TB9080FG_datasheet_en_20190701.pdf?did=65818&prodName=TB9080FG
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE MOTOR PRE-DRIVER
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 7V ~ 18V
Technology: Bipolar
Supplier Device Package: 64-LQFP (10x10)
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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HN1C01FE-GR,LXHF HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE
HN1C01FE-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA ES6
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.13 EUR
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HN1C01FE-GR,LXHF HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE
HN1C01FE-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA ES6
Qualification: AEC-Q101
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Grade: Automotive
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 7452 Stücke:
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33+0.65 EUR
53+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
2000+0.14 EUR
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TLP7930(D4-TP1,F TLP7930_datasheet_en_20160509.pdf?did=35831&prodName=TLP7930
TLP7930(D4-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC ISOLATED MODULE 16BIT
Number of Channels: 1
Part Status: Active
Supplier Device Package: 8-SMD
Voltage Supply Source: Dual Supply
Resolution (Bits): 16 b
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Data Interface: Serial
Type: Isolated Module
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP7930(D4-TP1,F TLP7930_datasheet_en_20160509.pdf?did=35831&prodName=TLP7930
TLP7930(D4-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC ISOLATED MODULE 16BIT
Number of Channels: 1
Part Status: Active
Supplier Device Package: 8-SMD
Voltage Supply Source: Dual Supply
Resolution (Bits): 16 b
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C
Data Interface: Serial
Type: Isolated Module
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TA48L018F(TE12L,F) TA48L0xxF.pdf
TA48L018F(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 150MA PW-MINI
Produkt ist nicht verfügbar
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TA48L018F(TE12L,F) TA48L0xxF.pdf
TA48L018F(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 150MA PW-MINI
auf Bestellung 16 Stücke:
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15+1.44 EUR
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RN1707JE(TE85L,F) docget.jsp?did=19124&prodName=RN1707JE
RN1707JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
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RN1707JE(TE85L,F) docget.jsp?did=19124&prodName=RN1707JE
RN1707JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
34+0.62 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
2000+0.15 EUR
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TK3R3E08QM,S1X
TK3R3E08QM,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 3.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
auf Bestellung 163 Stücke:
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5+4.24 EUR
50+3.4 EUR
100+2.81 EUR
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SSM6N16FE,L3F SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE
SSM6N16FE,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.12 EUR
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SSM6N16FE,L3F SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE
SSM6N16FE,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 150mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
39+0.55 EUR
100+0.31 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.13 EUR
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DF5A5.6LJE,LM DF5A5.6LJE_datasheet_en_20140301.pdf?did=22263&prodName=DF5A5.6LJE
DF5A5.6LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: ESV
Capacitance @ Frequency: 8pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.069 EUR
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DF5A5.6LJE,LM DF5A5.6LJE_datasheet_en_20140301.pdf?did=22263&prodName=DF5A5.6LJE
DF5A5.6LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Power Line Protection: No
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 4
Supplier Device Package: ESV
Capacitance @ Frequency: 8pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 6188 Stücke:
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AnzahlPrivatkunde
44+0.48 EUR
70+0.3 EUR
113+0.19 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
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MSZ5V6,LF docget.jsp?did=155145&prodName=MSZ5V6
MSZ5V6,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 9VC SMINI
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 155W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5.6V
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 125pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Supplier Device Package: S-Mini
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
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MSZ5V6,LF docget.jsp?did=155145&prodName=MSZ5V6
MSZ5V6,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 9VC SMINI
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 155W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 5.3V
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5.6V
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Capacitance @ Frequency: 125pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Supplier Device Package: S-Mini
auf Bestellung 10851 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
62+0.35 EUR
87+0.24 EUR
100+0.21 EUR
500+0.15 EUR
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CEZ5V6,L3F docget.jsp?did=155995&prodName=CEZ5V6
CEZ5V6,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 9VC ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
Supplier Device Package: ESC
Produkt ist nicht verfügbar
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CEZ5V6,L3F docget.jsp?did=155995&prodName=CEZ5V6
CEZ5V6,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 9VC ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
Supplier Device Package: ESC
Produkt ist nicht verfügbar
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CUHZ5V6,H3F docget.jsp?did=70664&prodName=CUHZ5V6
CUHZ5V6,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 5.7VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 860pF @ 1MHz
Current - Peak Pulse (10/1000µs): 91A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 1750W (1.75kW)
Power Line Protection: No
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
9000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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CUHZ5V6,H3F docget.jsp?did=70664&prodName=CUHZ5V6
CUHZ5V6,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 5.7VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 860pF @ 1MHz
Current - Peak Pulse (10/1000µs): 91A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 5.7V (Typ)
Power - Peak Pulse: 1750W (1.75kW)
Power Line Protection: No
auf Bestellung 64500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
36+0.6 EUR
50+0.43 EUR
100+0.37 EUR
500+0.29 EUR
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TK090U65Z,RQ docget.jsp?did=69970&prodName=TK090U65Z
TK090U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=230W F=1MHZ
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Produkt ist nicht verfügbar
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TK090U65Z,RQ docget.jsp?did=69970&prodName=TK090U65Z
TK090U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=230W F=1MHZ
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TOLL
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.91 EUR
10+8 EUR
100+5.78 EUR
500+4.83 EUR
1000+4.82 EUR
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