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CUZ16V,H3F CUZ16V,H3F Toshiba Semiconductor and Storage docget.jsp?did=69335&prodName=CUZ16V Description: TVS DIODE 16VWM 27VC USC
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
CUZ16V,H3F CUZ16V,H3F Toshiba Semiconductor and Storage docget.jsp?did=69335&prodName=CUZ16V Description: TVS DIODE 16VWM 27VC USC
auf Bestellung 5802 Stücke:
Lieferzeit 21-28 Tag (e)
CEZ16V,L3F CEZ16V,L3F Toshiba Semiconductor and Storage docget.jsp?did=69323&prodName=CEZ16V Description: TVS DIODE 16VWM 27VC ESC
Produkt ist nicht verfügbar
CEZ16V,L3F CEZ16V,L3F Toshiba Semiconductor and Storage docget.jsp?did=69323&prodName=CEZ16V Description: TVS DIODE 16VWM 27VC ESC
auf Bestellung 7803 Stücke:
Lieferzeit 21-28 Tag (e)
MUZ16V,LF MUZ16V,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ16V Description: TVS DIODE 16VWM 27VC USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
MUZ16V,LF MUZ16V,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ16V Description: TVS DIODE 16VWM 27VC USM
auf Bestellung 5987 Stücke:
Lieferzeit 21-28 Tag (e)
MSZ16V,LF MSZ16V,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ16V Description: TVS DIODE 16VWM 27VC SMINI
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
MSZ16V,LF MSZ16V,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ16V Description: TVS DIODE 16VWM 27VC SMINI
auf Bestellung 5996 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
37+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 30
TK430A60F,S4X(S TK430A60F,S4X(S Toshiba Semiconductor and Storage docget.jsp?did=63673&prodName=TK430A60F Description: MOSFET N-CH
Produkt ist nicht verfügbar
TK4K1A60F,S4X TK4K1A60F,S4X Toshiba Semiconductor and Storage TK4K1A60F_datasheet_en_20180925.pdf?did=61570&prodName=TK4K1A60F Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V
auf Bestellung 82 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.16 EUR
14+ 1.89 EUR
Mindestbestellmenge: 13
4N27(SHORT-TP1,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
4N27(SHORT,F) 4N27(SHORT,F) Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
RN2307,LF RN2307,LF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2307,LF RN2307,LF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2655 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
Mindestbestellmenge: 63
RN2307,LXHF RN2307,LXHF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
RN2307,LXHF RN2307,LXHF Toshiba Semiconductor and Storage RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 29
DF2B5BSL,L3F DF2B5BSL,L3F Toshiba Semiconductor and Storage DF2B5BSL_datasheet_en_20200513.pdf?did=63674&prodName=DF2B5BSL Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
DF2B5BSL,L3F DF2B5BSL,L3F Toshiba Semiconductor and Storage DF2B5BSL_datasheet_en_20200513.pdf?did=63674&prodName=DF2B5BSL Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
auf Bestellung 1532 Stücke:
Lieferzeit 21-28 Tag (e)
56+0.47 EUR
79+ 0.33 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.093 EUR
Mindestbestellmenge: 56
DF2B7PCT,L3F DF2B7PCT,L3F Toshiba Semiconductor and Storage DF2B7PCT_datasheet_en_20210322.pdf?did=69072&prodName=DF2B7PCT Description: BI-DIRECTIONAL ESD PROTECTION DI
Produkt ist nicht verfügbar
DF2B7PCT,L3F DF2B7PCT,L3F Toshiba Semiconductor and Storage DF2B7PCT_datasheet_en_20210322.pdf?did=69072&prodName=DF2B7PCT Description: BI-DIRECTIONAL ESD PROTECTION DI
auf Bestellung 7350 Stücke:
Lieferzeit 21-28 Tag (e)
31+0.86 EUR
37+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
5000+ 0.13 EUR
Mindestbestellmenge: 31
DF2B5PCT,L3F DF2B5PCT,L3F Toshiba Semiconductor and Storage DF2B5PCT_datasheet_en_20200414.pdf?did=69070&prodName=DF2B5PCT Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
Produkt ist nicht verfügbar
DF2B5PCT,L3F DF2B5PCT,L3F Toshiba Semiconductor and Storage DF2B5PCT_datasheet_en_20200414.pdf?did=69070&prodName=DF2B5PCT Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
auf Bestellung 6534 Stücke:
Lieferzeit 21-28 Tag (e)
35+0.75 EUR
52+ 0.5 EUR
106+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
5000+ 0.11 EUR
Mindestbestellmenge: 35
DF2S5M5CT,L3F Toshiba Semiconductor and Storage DF2S5M5CT_datasheet_en_20210317.pdf?did=70609&prodName=DF2S5M5CT Description: UNIDIRECTIONAL ESD DIODE VRWM:3.
Produkt ist nicht verfügbar
DF2S5M5CT,L3F Toshiba Semiconductor and Storage DF2S5M5CT_datasheet_en_20210317.pdf?did=70609&prodName=DF2S5M5CT Description: UNIDIRECTIONAL ESD DIODE VRWM:3.
auf Bestellung 392 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
39+ 0.68 EUR
100+ 0.39 EUR
Mindestbestellmenge: 28
DF2B18FU,H3XHF DF2B18FU,H3XHF Toshiba Semiconductor and Storage DF2B18FU_datasheet_en_20210625.pdf?did=29926&prodName=DF2B18FU Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.19 EUR
Mindestbestellmenge: 3000
DF2B18FU,H3XHF DF2B18FU,H3XHF Toshiba Semiconductor and Storage DF2B18FU_datasheet_en_20210625.pdf?did=29926&prodName=DF2B18FU Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
auf Bestellung 5878 Stücke:
Lieferzeit 21-28 Tag (e)
26+1.01 EUR
35+ 0.75 EUR
100+ 0.43 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 26
TLE4276SV Toshiba Semiconductor and Storage Description: IC REG LINEAR LDO ADJ TO220
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
TCKE800NA,RF TCKE800NA,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+1.64 EUR
8000+ 1.58 EUR
12000+ 1.52 EUR
Mindestbestellmenge: 4000
TCKE800NA,RF TCKE800NA,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 39594 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 3.21 EUR
25+ 3.03 EUR
100+ 2.58 EUR
250+ 2.42 EUR
500+ 2.12 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 8
TCKE800NL,RF TCKE800NL,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+1.64 EUR
8000+ 1.58 EUR
12000+ 1.52 EUR
Mindestbestellmenge: 4000
TCKE800NL,RF TCKE800NL,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 43734 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 3.21 EUR
25+ 3.03 EUR
100+ 2.58 EUR
250+ 2.42 EUR
500+ 2.12 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 8
TCKE712BNL,RF TCKE712BNL,RF Toshiba Semiconductor and Storage Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+1.8 EUR
8000+ 1.73 EUR
12000+ 1.67 EUR
Mindestbestellmenge: 4000
TCKE712BNL,RF TCKE712BNL,RF Toshiba Semiconductor and Storage Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 20276 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.53 EUR
25+ 3.33 EUR
100+ 2.84 EUR
250+ 2.67 EUR
500+ 2.33 EUR
1000+ 1.93 EUR
Mindestbestellmenge: 7
TCKE812NA,RF TCKE812NA,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+1.64 EUR
8000+ 1.58 EUR
12000+ 1.52 EUR
Mindestbestellmenge: 4000
TCKE812NA,RF TCKE812NA,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 40256 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 3.21 EUR
25+ 3.03 EUR
100+ 2.58 EUR
250+ 2.42 EUR
500+ 2.12 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 8
TCKE812NL,RF TCKE812NL,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
auf Bestellung 28000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+1.64 EUR
8000+ 1.58 EUR
12000+ 1.52 EUR
Mindestbestellmenge: 4000
TCKE812NL,RF TCKE812NL,RF Toshiba Semiconductor and Storage TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
auf Bestellung 38257 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 3.21 EUR
25+ 3.03 EUR
100+ 2.58 EUR
250+ 2.42 EUR
500+ 2.12 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 8
TK62Z60X,S1F TK62Z60X,S1F Toshiba Semiconductor and Storage TK62Z60X_datasheet_en_20171206.pdf?did=30416&prodName=TK62Z60X Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)
1+45.4 EUR
10+ 41.73 EUR
TLX9188(GBTPL,F TLX9188(GBTPL,F Toshiba Semiconductor and Storage docget.jsp?did=139677&prodName=TLX9188 Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+3.49 EUR
6000+ 3.42 EUR
Mindestbestellmenge: 3000
TLX9188(GBTPL,F TLX9188(GBTPL,F Toshiba Semiconductor and Storage docget.jsp?did=139677&prodName=TLX9188 Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 9032 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.14 EUR
10+ 5.75 EUR
100+ 4.71 EUR
500+ 3.97 EUR
1000+ 3.64 EUR
Mindestbestellmenge: 4
MQ01ACF032 MQ01ACF032 Toshiba Semiconductor and Storage cHDD-MQ01ACFxxx-Product-Overview.pdf Description: 320GB 2.5" SATA III 5V 7.2K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 320GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
auf Bestellung 29 Stücke:
Lieferzeit 21-28 Tag (e)
1+176.46 EUR
10+ 159.92 EUR
25+ 154.41 EUR
DF2B6M5CT,L3F Toshiba Semiconductor and Storage DF2B6M5CT_datasheet_en_20200807.pdf?did=70074&prodName=DF2B6M5CT Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
Produkt ist nicht verfügbar
DF2B6M5CT,L3F Toshiba Semiconductor and Storage DF2B6M5CT_datasheet_en_20200807.pdf?did=70074&prodName=DF2B6M5CT Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
auf Bestellung 8854 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.14 EUR
33+ 0.8 EUR
100+ 0.41 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
2000+ 0.21 EUR
5000+ 0.2 EUR
Mindestbestellmenge: 23
TCR2EE39,LM(CT TCR2EE39,LM(CT Toshiba Semiconductor and Storage TCR2EE39_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE39 Description: IC REG LINEAR 3.9V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.9V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 3525 Stücke:
Lieferzeit 21-28 Tag (e)
31+0.86 EUR
42+ 0.63 EUR
47+ 0.55 EUR
100+ 0.36 EUR
250+ 0.3 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 31
TB9080FG Toshiba Semiconductor and Storage TB9080FG_datasheet_en_20190701.pdf?did=65818&prodName=TB9080FG Description: AUTOMOTIVE MOTOR PRE-DRIVER
Produkt ist nicht verfügbar
HN1C01FE-GR,LXHF HN1C01FE-GR,LXHF Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.16 EUR
Mindestbestellmenge: 4000
HN1C01FE-GR,LXHF HN1C01FE-GR,LXHF Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 7962 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 29
TLP7930(D4-TP1,F TLP7930(D4-TP1,F Toshiba Semiconductor and Storage TLP7930_datasheet_en_20160509.pdf?did=35831&prodName=TLP7930 Description: IC ISOLATED MODULE 16BIT
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Type: Isolated Module
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SMD
Part Status: Active
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
1500+7.98 EUR
Mindestbestellmenge: 1500
TLP7930(D4-TP1,F TLP7930(D4-TP1,F Toshiba Semiconductor and Storage TLP7930_datasheet_en_20160509.pdf?did=35831&prodName=TLP7930 Description: IC ISOLATED MODULE 16BIT
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Type: Isolated Module
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SMD
Part Status: Active
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.07 EUR
10+ 11.66 EUR
100+ 9.63 EUR
500+ 8.44 EUR
Mindestbestellmenge: 2
TA48L018F(TE12L,F) TA48L018F(TE12L,F) Toshiba Semiconductor and Storage TA48L0xxF.pdf Description: IC REG LINEAR 1.8V 150MA PW-MINI
Produkt ist nicht verfügbar
TA48L018F(TE12L,F) TA48L018F(TE12L,F) Toshiba Semiconductor and Storage TA48L0xxF.pdf Description: IC REG LINEAR 1.8V 150MA PW-MINI
auf Bestellung 16 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.79 EUR
Mindestbestellmenge: 15
RN1707JE(TE85L,F) RN1707JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19124&prodName=RN1707JE Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.19 EUR
Mindestbestellmenge: 4000
RN1707JE(TE85L,F) RN1707JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19124&prodName=RN1707JE Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
34+ 0.77 EUR
100+ 0.44 EUR
500+ 0.29 EUR
1000+ 0.22 EUR
2000+ 0.19 EUR
Mindestbestellmenge: 25
TK3R3E08QM,S1X TK3R3E08QM,S1X Toshiba Semiconductor and Storage docget.jsp?did=70293&prodName=TK3R3E08QM Description: UMOS10 TO-220AB 80V 3.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
auf Bestellung 120 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.72 EUR
10+ 5.15 EUR
100+ 4.14 EUR
Mindestbestellmenge: 5
SSM6N16FE,L3F SSM6N16FE,L3F Toshiba Semiconductor and Storage SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
8000+0.15 EUR
Mindestbestellmenge: 8000
SSM6N16FE,L3F SSM6N16FE,L3F Toshiba Semiconductor and Storage SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
39+ 0.67 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 29
DF5A5.6LJE,LM DF5A5.6LJE,LM Toshiba Semiconductor and Storage docget.jsp?did=22263&prodName=DF5A5.6LJE Description: TVS DIODE ESV
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.17 EUR
Mindestbestellmenge: 4000
DF5A5.6LJE,LM DF5A5.6LJE,LM Toshiba Semiconductor and Storage docget.jsp?did=22263&prodName=DF5A5.6LJE Description: TVS DIODE ESV
auf Bestellung 7375 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
34+ 0.78 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 28
MSZ5V6,LF MSZ5V6,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ5V6 Description: TVS DIODE 5.6VWM 9VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
MSZ5V6,LF MSZ5V6,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ5V6 Description: TVS DIODE 5.6VWM 9VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
auf Bestellung 7270 Stücke:
Lieferzeit 21-28 Tag (e)
34+0.78 EUR
49+ 0.54 EUR
100+ 0.26 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 34
CUZ16V,H3F docget.jsp?did=69335&prodName=CUZ16V
CUZ16V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC USC
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
CUZ16V,H3F docget.jsp?did=69335&prodName=CUZ16V
CUZ16V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC USC
auf Bestellung 5802 Stücke:
Lieferzeit 21-28 Tag (e)
CEZ16V,L3F docget.jsp?did=69323&prodName=CEZ16V
CEZ16V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC ESC
Produkt ist nicht verfügbar
CEZ16V,L3F docget.jsp?did=69323&prodName=CEZ16V
CEZ16V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC ESC
auf Bestellung 7803 Stücke:
Lieferzeit 21-28 Tag (e)
MUZ16V,LF docget.jsp?did=69487&prodName=MUZ16V
MUZ16V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC USM
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
MUZ16V,LF docget.jsp?did=69487&prodName=MUZ16V
MUZ16V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC USM
auf Bestellung 5987 Stücke:
Lieferzeit 21-28 Tag (e)
MSZ16V,LF docget.jsp?did=69349&prodName=MSZ16V
MSZ16V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC SMINI
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
Mindestbestellmenge: 3000
MSZ16V,LF docget.jsp?did=69349&prodName=MSZ16V
MSZ16V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 16VWM 27VC SMINI
auf Bestellung 5996 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
37+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 30
TK430A60F,S4X(S docget.jsp?did=63673&prodName=TK430A60F
TK430A60F,S4X(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH
Produkt ist nicht verfügbar
TK4K1A60F,S4X TK4K1A60F_datasheet_en_20180925.pdf?did=61570&prodName=TK4K1A60F
TK4K1A60F,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 4.1Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 300 V
auf Bestellung 82 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
14+ 1.89 EUR
Mindestbestellmenge: 13
4N27(SHORT-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
4N27(SHORT,F)
4N27(SHORT,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Rise / Fall Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
RN2307,LF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2307,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN2307,LF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2307,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2655 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
Mindestbestellmenge: 63
RN2307,LXHF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2307,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.16 EUR
Mindestbestellmenge: 3000
RN2307,LXHF RN2307_datasheet_en_20210824.pdf?did=19003&prodName=RN2307
RN2307,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 29
DF2B5BSL,L3F DF2B5BSL_datasheet_en_20200513.pdf?did=63674&prodName=DF2B5BSL
DF2B5BSL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
DF2B5BSL,L3F DF2B5BSL_datasheet_en_20200513.pdf?did=63674&prodName=DF2B5BSL
DF2B5BSL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 11pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 112W
Power Line Protection: No
Part Status: Active
auf Bestellung 1532 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.47 EUR
79+ 0.33 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.093 EUR
Mindestbestellmenge: 56
DF2B7PCT,L3F DF2B7PCT_datasheet_en_20210322.pdf?did=69072&prodName=DF2B7PCT
DF2B7PCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Produkt ist nicht verfügbar
DF2B7PCT,L3F DF2B7PCT_datasheet_en_20210322.pdf?did=69072&prodName=DF2B7PCT
DF2B7PCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
auf Bestellung 7350 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
37+ 0.72 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
5000+ 0.13 EUR
Mindestbestellmenge: 31
DF2B5PCT,L3F DF2B5PCT_datasheet_en_20200414.pdf?did=69070&prodName=DF2B5PCT
DF2B5PCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
Produkt ist nicht verfügbar
DF2B5PCT,L3F DF2B5PCT_datasheet_en_20200414.pdf?did=69070&prodName=DF2B5PCT
DF2B5PCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: BI-DIRECTIONAL ESD PROTECTION DI
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 41pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.7V
Voltage - Clamping (Max) @ Ipp: 22V
Power - Peak Pulse: 590W
Power Line Protection: No
auf Bestellung 6534 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
35+0.75 EUR
52+ 0.5 EUR
106+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
5000+ 0.11 EUR
Mindestbestellmenge: 35
DF2S5M5CT,L3F DF2S5M5CT_datasheet_en_20210317.pdf?did=70609&prodName=DF2S5M5CT
Hersteller: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM:3.
Produkt ist nicht verfügbar
DF2S5M5CT,L3F DF2S5M5CT_datasheet_en_20210317.pdf?did=70609&prodName=DF2S5M5CT
Hersteller: Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM:3.
auf Bestellung 392 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
39+ 0.68 EUR
100+ 0.39 EUR
Mindestbestellmenge: 28
DF2B18FU,H3XHF DF2B18FU_datasheet_en_20210625.pdf?did=29926&prodName=DF2B18FU
DF2B18FU,H3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
Mindestbestellmenge: 3000
DF2B18FU,H3XHF DF2B18FU_datasheet_en_20210625.pdf?did=29926&prodName=DF2B18FU
DF2B18FU,H3XHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q BIDIRECTIONAL ESD PRO
auf Bestellung 5878 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
35+ 0.75 EUR
100+ 0.43 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 26
TLE4276SV
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR LDO ADJ TO220
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
TCKE800NA,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE800NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+1.64 EUR
8000+ 1.58 EUR
12000+ 1.52 EUR
Mindestbestellmenge: 4000
TCKE800NA,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE800NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 39594 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
10+ 3.21 EUR
25+ 3.03 EUR
100+ 2.58 EUR
250+ 2.42 EUR
500+ 2.12 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 8
TCKE800NL,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE800NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+1.64 EUR
8000+ 1.58 EUR
12000+ 1.52 EUR
Mindestbestellmenge: 4000
TCKE800NL,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE800NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 43734 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
10+ 3.21 EUR
25+ 3.03 EUR
100+ 2.58 EUR
250+ 2.42 EUR
500+ 2.12 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 8
TCKE712BNL,RF
TCKE712BNL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+1.8 EUR
8000+ 1.73 EUR
12000+ 1.67 EUR
Mindestbestellmenge: 4000
TCKE712BNL,RF
TCKE712BNL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 13.2V
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 20276 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.53 EUR
25+ 3.33 EUR
100+ 2.84 EUR
250+ 2.67 EUR
500+ 2.33 EUR
1000+ 1.93 EUR
Mindestbestellmenge: 7
TCKE812NA,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE812NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+1.64 EUR
8000+ 1.58 EUR
12000+ 1.52 EUR
Mindestbestellmenge: 4000
TCKE812NA,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE812NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 40256 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
10+ 3.21 EUR
25+ 3.03 EUR
100+ 2.58 EUR
250+ 2.42 EUR
500+ 2.12 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 8
TCKE812NL,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE812NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
auf Bestellung 28000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+1.64 EUR
8000+ 1.58 EUR
12000+ 1.52 EUR
Mindestbestellmenge: 4000
TCKE812NL,RF TCKE805NL_datasheet_en_20230707.pdf?did=139443&prodName=TCKE805NL
TCKE812NL,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: 10-WSONB (3x3)
auf Bestellung 38257 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
10+ 3.21 EUR
25+ 3.03 EUR
100+ 2.58 EUR
250+ 2.42 EUR
500+ 2.12 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 8
TK62Z60X,S1F TK62Z60X_datasheet_en_20171206.pdf?did=30416&prodName=TK62Z60X
TK62Z60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+45.4 EUR
10+ 41.73 EUR
TLX9188(GBTPL,F docget.jsp?did=139677&prodName=TLX9188
TLX9188(GBTPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.49 EUR
6000+ 3.42 EUR
Mindestbestellmenge: 3000
TLX9188(GBTPL,F docget.jsp?did=139677&prodName=TLX9188
TLX9188(GBTPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: TR COUPLER; HIGH VCEO; AECQ; ROH
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.27V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 200V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 9032 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.14 EUR
10+ 5.75 EUR
100+ 4.71 EUR
500+ 3.97 EUR
1000+ 3.64 EUR
Mindestbestellmenge: 4
MQ01ACF032 cHDD-MQ01ACFxxx-Product-Overview.pdf
MQ01ACF032
Hersteller: Toshiba Semiconductor and Storage
Description: 320GB 2.5" SATA III 5V 7.2K RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 320GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
auf Bestellung 29 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+176.46 EUR
10+ 159.92 EUR
25+ 154.41 EUR
DF2B6M5CT,L3F DF2B6M5CT_datasheet_en_20200807.pdf?did=70074&prodName=DF2B6M5CT
Hersteller: Toshiba Semiconductor and Storage
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
Produkt ist nicht verfügbar
DF2B6M5CT,L3F DF2B6M5CT_datasheet_en_20200807.pdf?did=70074&prodName=DF2B6M5CT
Hersteller: Toshiba Semiconductor and Storage
Description: BIDIRECTIONAL ESD DIODE VRWM:+/-
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: CST2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 37W
Power Line Protection: No
auf Bestellung 8854 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
33+ 0.8 EUR
100+ 0.41 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
2000+ 0.21 EUR
5000+ 0.2 EUR
Mindestbestellmenge: 23
TCR2EE39,LM(CT TCR2EE39_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE39
TCR2EE39,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.9V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 3525 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
42+ 0.63 EUR
47+ 0.55 EUR
100+ 0.36 EUR
250+ 0.3 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 31
TB9080FG TB9080FG_datasheet_en_20190701.pdf?did=65818&prodName=TB9080FG
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE MOTOR PRE-DRIVER
Produkt ist nicht verfügbar
HN1C01FE-GR,LXHF HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE
HN1C01FE-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.16 EUR
Mindestbestellmenge: 4000
HN1C01FE-GR,LXHF HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE
HN1C01FE-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q NPN + NPN TR VCEO:50V
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 7962 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
41+ 0.64 EUR
100+ 0.32 EUR
500+ 0.26 EUR
1000+ 0.2 EUR
2000+ 0.16 EUR
Mindestbestellmenge: 29
TLP7930(D4-TP1,F TLP7930_datasheet_en_20160509.pdf?did=35831&prodName=TLP7930
TLP7930(D4-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC ISOLATED MODULE 16BIT
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Type: Isolated Module
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SMD
Part Status: Active
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+7.98 EUR
Mindestbestellmenge: 1500
TLP7930(D4-TP1,F TLP7930_datasheet_en_20160509.pdf?did=35831&prodName=TLP7930
TLP7930(D4-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: IC ISOLATED MODULE 16BIT
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Type: Isolated Module
Data Interface: Serial
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Resolution (Bits): 16 b
Voltage Supply Source: Dual Supply
Supplier Device Package: 8-SMD
Part Status: Active
Number of Channels: 1
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+16.07 EUR
10+ 11.66 EUR
100+ 9.63 EUR
500+ 8.44 EUR
Mindestbestellmenge: 2
TA48L018F(TE12L,F) TA48L0xxF.pdf
TA48L018F(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 150MA PW-MINI
Produkt ist nicht verfügbar
TA48L018F(TE12L,F) TA48L0xxF.pdf
TA48L018F(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 150MA PW-MINI
auf Bestellung 16 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.79 EUR
Mindestbestellmenge: 15
RN1707JE(TE85L,F) docget.jsp?did=19124&prodName=RN1707JE
RN1707JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.19 EUR
Mindestbestellmenge: 4000
RN1707JE(TE85L,F) docget.jsp?did=19124&prodName=RN1707JE
RN1707JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=4
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
34+ 0.77 EUR
100+ 0.44 EUR
500+ 0.29 EUR
1000+ 0.22 EUR
2000+ 0.19 EUR
Mindestbestellmenge: 25
TK3R3E08QM,S1X docget.jsp?did=70293&prodName=TK3R3E08QM
TK3R3E08QM,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 3.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
auf Bestellung 120 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.72 EUR
10+ 5.15 EUR
100+ 4.14 EUR
Mindestbestellmenge: 5
SSM6N16FE,L3F SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE
SSM6N16FE,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8000+0.15 EUR
Mindestbestellmenge: 8000
SSM6N16FE,L3F SSM6N16FE_datasheet_en_20170711.pdf?did=19750&prodName=SSM6N16FE
SSM6N16FE,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: SMALL SIGNAL MOSFET N-CH X 2 VDS
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
39+ 0.67 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 29
DF5A5.6LJE,LM docget.jsp?did=22263&prodName=DF5A5.6LJE
DF5A5.6LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.17 EUR
Mindestbestellmenge: 4000
DF5A5.6LJE,LM docget.jsp?did=22263&prodName=DF5A5.6LJE
DF5A5.6LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
auf Bestellung 7375 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
34+ 0.78 EUR
100+ 0.41 EUR
500+ 0.27 EUR
1000+ 0.18 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 28
MSZ5V6,LF docget.jsp?did=69349&prodName=MSZ5V6
MSZ5V6,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 9VC SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.13 EUR
Mindestbestellmenge: 3000
MSZ5V6,LF docget.jsp?did=69349&prodName=MSZ5V6
MSZ5V6,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.6VWM 9VC SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 125pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: S-Mini
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Power - Peak Pulse: 155W
Power Line Protection: No
Part Status: Active
auf Bestellung 7270 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
34+0.78 EUR
49+ 0.54 EUR
100+ 0.26 EUR
500+ 0.22 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 34
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