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MUZ8V2,LF MUZ8V2,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ8V2 Description: TVS DIODE 8.2VWM 16.5VC USM
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MUZ8V2,LF MUZ8V2,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ8V2 Description: TVS DIODE 8.2VWM 16.5VC USM
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CUZ8V2,H3F CUZ8V2,H3F Toshiba Semiconductor and Storage docget.jsp?did=69335&prodName=CUZ8V2 Description: TVS DIODE 8.2VWM 16.5VC USC
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CUZ8V2,H3F CUZ8V2,H3F Toshiba Semiconductor and Storage docget.jsp?did=69335&prodName=CUZ8V2 Description: TVS DIODE 8.2VWM 16.5VC USC
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SSM3K62TU,LXHF SSM3K62TU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=54982&prodName=SSM3K62TU Description: SMOS LOW RON NCH VDSS:20V ID:0.8
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
Qualification: AEC-Q101
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SSM3K62TU,LXHF SSM3K62TU,LXHF Toshiba Semiconductor and Storage docget.jsp?did=54982&prodName=SSM3K62TU Description: SMOS LOW RON NCH VDSS:20V ID:0.8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Grade: Automotive
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
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SSM3K361TU,LXHF SSM3K361TU,LXHF Toshiba Semiconductor and Storage SSM3K361TU_datasheet_en_20220419.pdf?did=56019&prodName=SSM3K361TU Description: AECQ MOSFET NCH 100V 3.5A SOT323
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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SSM3K361TU,LXHF SSM3K361TU,LXHF Toshiba Semiconductor and Storage SSM3K361TU_datasheet_en_20220419.pdf?did=56019&prodName=SSM3K361TU Description: AECQ MOSFET NCH 100V 3.5A SOT323
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
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18+1.17 EUR
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HN1C01FE-Y,LXHF HN1C01FE-Y,LXHF Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: TRANS 2NPN DUAL 50V 150MA ES6
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Qualification: AEC-Q101
Grade: Automotive
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HN1C01FE-Y,LXHF HN1C01FE-Y,LXHF Toshiba Semiconductor and Storage HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE Description: TRANS 2NPN DUAL 50V 150MA ES6
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
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TLP3823(TP1,F TLP3823(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=57854&prodName=TLP3823 Description: SSR RELAY SPST-NO 3A 0-100V
Produkt ist nicht verfügbar
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TLP3823(TP1,F TLP3823(TP1,F Toshiba Semiconductor and Storage docget.jsp?did=57854&prodName=TLP3823 Description: SSR RELAY SPST-NO 3A 0-100V
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2SC4116-Y,LXHF 2SC4116-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SC4116-Y,LXHF 2SC4116-Y,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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2SC4116-BL,LXHF 2SC4116-BL,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
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2SC4116-BL,LXHF 2SC4116-BL,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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2SC4116-GR,LXHF 2SC4116-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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2SC4116-GR,LXHF 2SC4116-GR,LXHF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
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39+0.55 EUR
63+0.33 EUR
101+0.2 EUR
500+0.15 EUR
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TK17E80W,S1X TK17E80W,S1X Toshiba Semiconductor and Storage docget.jsp?did=35700&prodName=TK17E80W Description: MOSFET N-CHANNEL 800V 17A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 850µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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3+10.16 EUR
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TLP620-2(YASK,F) TLP620-2(YASK,F) Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-2(GB-TP1,F) TLP620-2(GB-TP1,F) Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-4(D4GB-F1,F Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-2(D4-LF2,F) Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP620-2(D4-TP1,F) TLP620-2(D4-TP1,F) Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620F-2(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Voltage - Output (Max): 55V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Produkt ist nicht verfügbar
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TLP620-4(YASK-GB,F Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 4
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 16-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP620F-2(D4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Obsolete
Voltage - Output (Max): 55V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP620-2(D4-GB,F) TLP620-2(D4-GB,F) Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-4(D4-LF2,F) Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: PHOTOCOUPLER
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 4
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 16-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Produkt ist nicht verfügbar
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TLP620-4(GB-LF5,F) Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-2(LF1,F) TLP620-2(LF1,F) Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-4(D4-LF1,F) Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: OPTOISOLTR 5KV 4CH TRANS 16-SMD
Packaging: Bulk
Package / Case: 16-SMD
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-2(D4GB-T4,F TLP620-2(D4GB-T4,F Toshiba Semiconductor and Storage TLP620_TLP620-2_-4_6-24-19.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP383(GB-TPL,E TLP383(GB-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=28831&prodName=TLP383 Description: MOSFET N-CH
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Box
Produkt ist nicht verfügbar
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TLP383(E(T X 4 Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS SO6
Produkt ist nicht verfügbar
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TLP383(BL,E(T X 4 Toshiba Semiconductor and Storage docget.jsp?did=28831&prodName=TLP383 Description: OPTOCOUPLER TRANS SO6
Packaging: Tube
Produkt ist nicht verfügbar
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TLP358F(D4-LF4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Current - Output / Channel: 6 A
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.57V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 100°C
Produkt ist nicht verfügbar
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TLP358(TP5,F) Toshiba Semiconductor and Storage TLP358_Rev4.0_1-19-16.pdf Description: PHOTOCOUPLER
Current - Output / Channel: 5.5 A
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.57V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP358(D4,F) Toshiba Semiconductor and Storage TLP358_Rev4.0_1-19-16.pdf Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-DIP
Approval Agency: CSA, cUL, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 5A, 5A
Technology: Optical Coupling
Current - Peak Output: 6A
Voltage - Forward (Vf) (Typ): 1.57V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Last Time Buy
Pulse Width Distortion (Max): 250ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Produkt ist nicht verfügbar
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TLP358F(D4-TP4,F) Toshiba Semiconductor and Storage TLP358F_Rev3.0_1-22-16.pdf Description: PHOTOCOUPLER
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Last Time Buy
Pulse Width Distortion (Max): 250ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-SMD
Approval Agency: CSA, cUL, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 5A, 5A
Technology: Optical Coupling
Current - Peak Output: 6A
Voltage - Forward (Vf) (Typ): 1.57V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP358F(TP4,F) Toshiba Semiconductor and Storage TLP358F_Rev3.0_1-22-16.pdf Description: PHOTOCOUPLER
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Current - Output / Channel: 6 A
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.57V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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TLP358(D4-LF5,F) Toshiba Semiconductor and Storage TLP358_Rev4.0_1-19-16.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Produkt ist nicht verfügbar
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TLP358(D4-LF1,F) Toshiba Semiconductor and Storage TLP358_Rev4.0_1-19-16.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Produkt ist nicht verfügbar
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TLP358(D4-TP1,F) Toshiba Semiconductor and Storage TLP358_Rev4.0_1-19-16.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Produkt ist nicht verfügbar
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TLP358F(F) Toshiba Semiconductor and Storage TLP358F_Rev3.0_1-22-16.pdf Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP358(D4-TP5,F) Toshiba Semiconductor and Storage TLP358_Rev4.0_1-19-16.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP358F(D4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
Produkt ist nicht verfügbar
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TLP358(LF5,F) Toshiba Semiconductor and Storage TLP358_Rev4.0_1-19-16.pdf Description: PHOTOCOUPLER
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-DIP
Approval Agency: CSA, cUL, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 5A, 5A
Technology: Optical Coupling
Current - Peak Output: 6A
Voltage - Forward (Vf) (Typ): 1.57V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Last Time Buy
Pulse Width Distortion (Max): 250ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Produkt ist nicht verfügbar
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TLP3481(TP,E TLP3481(TP,E Toshiba Semiconductor and Storage TLP3481_datasheet_en_20230526.pdf?did=69122&prodName=TLP3481 Description: SSR RELAY SPST-NO 3A 0-60V T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 3 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 12000 Stücke:
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3000+4.59 EUR
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TLP3481(TP,E TLP3481(TP,E Toshiba Semiconductor and Storage TLP3481_datasheet_en_20230526.pdf?did=69122&prodName=TLP3481 Description: SSR RELAY SPST-NO 3A 0-60V T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 3 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 13155 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.56 EUR
10+7.12 EUR
100+5.69 EUR
500+5.06 EUR
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TK22A65X,S5X TK22A65X,S5X Toshiba Semiconductor and Storage docget.jsp?did=54458&prodName=TK22A65X Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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TK22A65X5,S5X TK22A65X5,S5X Toshiba Semiconductor and Storage docget.jsp?did=54457&prodName=TK22A65X5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 749 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.77 EUR
50+4.57 EUR
100+4.15 EUR
500+3.44 EUR
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SSM3K09FU,LF SSM3K09FU,LF Toshiba Semiconductor and Storage SSM3K09FU_datasheet_en_20140301.pdf?did=19599&prodName=SSM3K09FU Description: MOSFET N-CH 30V 400MA USM
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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SSM3K09FU,LF SSM3K09FU,LF Toshiba Semiconductor and Storage SSM3K09FU_datasheet_en_20140301.pdf?did=19599&prodName=SSM3K09FU Description: MOSFET N-CH 30V 400MA USM
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 33255 Stücke:
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41+0.51 EUR
100+0.32 EUR
500+0.24 EUR
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2SA1931(NOMARK,A,Q 2SA1931(NOMARK,A,Q Toshiba Semiconductor and Storage 2SA1931.pdf Description: TRANS PNP 50V 5A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SA1931,NETQ(M 2SA1931,NETQ(M Toshiba Semiconductor and Storage 2SA1931.pdf Description: TRANS PNP 50V 5A TO220NIS
Produkt ist nicht verfügbar
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2SA1931,NIKKIQ(J 2SA1931,NIKKIQ(J Toshiba Semiconductor and Storage 2SA1931.pdf Description: TRANS PNP 50V 5A TO220NIS
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Produkt ist nicht verfügbar
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2SA1931,BOSCHQ(J 2SA1931,BOSCHQ(J Toshiba Semiconductor and Storage 2SA1931.pdf Description: TRANS PNP 50V 5A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SA1931,KEHINQ(M 2SA1931,KEHINQ(M Toshiba Semiconductor and Storage 2SA1931.pdf Description: TRANS PNP 50V 5A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SA1931,SINFQ(J 2SA1931,SINFQ(J Toshiba Semiconductor and Storage 2SA1931.pdf Description: TRANS PNP 50V 5A TO220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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MUZ8V2,LF docget.jsp?did=69487&prodName=MUZ8V2
MUZ8V2,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 16.5VC USM
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3000+0.13 EUR
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MUZ8V2,LF docget.jsp?did=69487&prodName=MUZ8V2
MUZ8V2,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 16.5VC USM
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CUZ8V2,H3F docget.jsp?did=69335&prodName=CUZ8V2
CUZ8V2,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 16.5VC USC
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CUZ8V2,H3F docget.jsp?did=69335&prodName=CUZ8V2
CUZ8V2,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 16.5VC USC
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28+0.77 EUR
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SSM3K62TU,LXHF docget.jsp?did=54982&prodName=SSM3K62TU
SSM3K62TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH VDSS:20V ID:0.8
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
Qualification: AEC-Q101
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SSM3K62TU,LXHF docget.jsp?did=54982&prodName=SSM3K62TU
SSM3K62TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH VDSS:20V ID:0.8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Grade: Automotive
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 5518 Stücke:
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24+0.88 EUR
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100+0.38 EUR
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SSM3K361TU,LXHF SSM3K361TU_datasheet_en_20220419.pdf?did=56019&prodName=SSM3K361TU
SSM3K361TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 100V 3.5A SOT323
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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3000+0.45 EUR
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SSM3K361TU,LXHF SSM3K361TU_datasheet_en_20220419.pdf?did=56019&prodName=SSM3K361TU
SSM3K361TU,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 100V 3.5A SOT323
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 6773 Stücke:
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12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
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HN1C01FE-Y,LXHF HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE
HN1C01FE-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA ES6
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Qualification: AEC-Q101
Grade: Automotive
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4000+0.13 EUR
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HN1C01FE-Y,LXHF HN1C01FE_datasheet_en_20210818.pdf?did=22307&prodName=HN1C01FE
HN1C01FE-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA ES6
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
auf Bestellung 7988 Stücke:
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33+0.65 EUR
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TLP3823(TP1,F docget.jsp?did=57854&prodName=TLP3823
TLP3823(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Produkt ist nicht verfügbar
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TLP3823(TP1,F docget.jsp?did=57854&prodName=TLP3823
TLP3823(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
auf Bestellung 975 Stücke:
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2+16.29 EUR
10+11.82 EUR
100+9.77 EUR
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2SC4116-Y,LXHF docget.jsp?did=19292&prodName=2SC4116
2SC4116-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2SC4116-Y,LXHF docget.jsp?did=19292&prodName=2SC4116
2SC4116-Y,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5610 Stücke:
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39+0.55 EUR
63+0.33 EUR
101+0.2 EUR
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2SC4116-BL,LXHF docget.jsp?did=19292&prodName=2SC4116
2SC4116-BL,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
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3000+0.11 EUR
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2SC4116-BL,LXHF docget.jsp?did=19292&prodName=2SC4116
2SC4116-BL,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5963 Stücke:
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39+0.55 EUR
63+0.33 EUR
101+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
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2SC4116-GR,LXHF docget.jsp?did=19292&prodName=2SC4116
2SC4116-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.11 EUR
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2SC4116-GR,LXHF docget.jsp?did=19292&prodName=2SC4116
2SC4116-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
auf Bestellung 5908 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
63+0.33 EUR
101+0.2 EUR
500+0.15 EUR
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TK17E80W,S1X docget.jsp?did=35700&prodName=TK17E80W
TK17E80W,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 800V 17A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 850µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 42 Stücke:
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AnzahlPrivatkunde
3+10.16 EUR
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TLP620-2(YASK,F) TLP620_TLP620-2_-4_6-24-19.pdf
TLP620-2(YASK,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-2(GB-TP1,F) TLP620_TLP620-2_-4_6-24-19.pdf
TLP620-2(GB-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-4(D4GB-F1,F TLP620_TLP620-2_-4_6-24-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-2(D4-LF2,F) TLP620_TLP620-2_-4_6-24-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP620-2(D4-TP1,F) TLP620_TLP620-2_-4_6-24-19.pdf
TLP620-2(D4-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620F-2(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Voltage - Output (Max): 55V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Produkt ist nicht verfügbar
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TLP620-4(YASK-GB,F TLP620_TLP620-2_-4_6-24-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 4
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 16-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP620F-2(D4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Obsolete
Voltage - Output (Max): 55V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP620-2(D4-GB,F) TLP620_TLP620-2_-4_6-24-19.pdf
TLP620-2(D4-GB,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-4(D4-LF2,F) TLP620_TLP620-2_-4_6-24-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 4
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 16-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Produkt ist nicht verfügbar
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TLP620-4(GB-LF5,F) TLP620_TLP620-2_-4_6-24-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-2(LF1,F) TLP620_TLP620-2_-4_6-24-19.pdf
TLP620-2(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-4(D4-LF1,F) TLP620_TLP620-2_-4_6-24-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 4CH TRANS 16-SMD
Packaging: Bulk
Package / Case: 16-SMD
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP620-2(D4GB-T4,F TLP620_TLP620-2_-4_6-24-19.pdf
TLP620-2(D4GB-T4,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP383(GB-TPL,E docget.jsp?did=28831&prodName=TLP383
TLP383(GB-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Box
Produkt ist nicht verfügbar
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TLP383(E(T X 4
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Produkt ist nicht verfügbar
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TLP383(BL,E(T X 4 docget.jsp?did=28831&prodName=TLP383
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Packaging: Tube
Produkt ist nicht verfügbar
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TLP358F(D4-LF4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Current - Output / Channel: 6 A
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.57V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 100°C
Produkt ist nicht verfügbar
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TLP358(TP5,F) TLP358_Rev4.0_1-19-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - Output / Channel: 5.5 A
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.57V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP358(D4,F) TLP358_Rev4.0_1-19-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-DIP
Approval Agency: CSA, cUL, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 5A, 5A
Technology: Optical Coupling
Current - Peak Output: 6A
Voltage - Forward (Vf) (Typ): 1.57V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Last Time Buy
Pulse Width Distortion (Max): 250ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Produkt ist nicht verfügbar
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TLP358F(D4-TP4,F) TLP358F_Rev3.0_1-22-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Last Time Buy
Pulse Width Distortion (Max): 250ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-SMD
Approval Agency: CSA, cUL, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 5A, 5A
Technology: Optical Coupling
Current - Peak Output: 6A
Voltage - Forward (Vf) (Typ): 1.57V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP358F(TP4,F) TLP358F_Rev3.0_1-22-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Current - Output / Channel: 6 A
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.57V
Voltage - Supply: 15V ~ 30V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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TLP358(D4-LF5,F) TLP358_Rev4.0_1-19-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Produkt ist nicht verfügbar
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TLP358(D4-LF1,F) TLP358_Rev4.0_1-19-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Produkt ist nicht verfügbar
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TLP358(D4-TP1,F) TLP358_Rev4.0_1-19-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Produkt ist nicht verfügbar
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TLP358F(F) TLP358F_Rev3.0_1-22-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP358(D4-TP5,F) TLP358_Rev4.0_1-19-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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TLP358F(D4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
Produkt ist nicht verfügbar
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TLP358(LF5,F) TLP358_Rev4.0_1-19-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Rise / Fall Time (Typ): 17ns, 17ns
Supplier Device Package: 8-DIP
Approval Agency: CSA, cUL, UL, VDE
Voltage - Isolation: 3750Vrms
Current - Output High, Low: 5A, 5A
Technology: Optical Coupling
Current - Peak Output: 6A
Voltage - Forward (Vf) (Typ): 1.57V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Last Time Buy
Pulse Width Distortion (Max): 250ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Produkt ist nicht verfügbar
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TLP3481(TP,E TLP3481_datasheet_en_20230526.pdf?did=69122&prodName=TLP3481
TLP3481(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-60V T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 3 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+4.75 EUR
3000+4.59 EUR
Mindestbestellmenge: 1500 Stücke
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TLP3481(TP,E TLP3481_datasheet_en_20230526.pdf?did=69122&prodName=TLP3481
TLP3481(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-60V T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 3 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 13155 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.56 EUR
10+7.12 EUR
100+5.69 EUR
500+5.06 EUR
Mindestbestellmenge: 3 Stücke
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TK22A65X,S5X docget.jsp?did=54458&prodName=TK22A65X
TK22A65X,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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TK22A65X5,S5X docget.jsp?did=54457&prodName=TK22A65X5
TK22A65X5,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 749 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.77 EUR
50+4.57 EUR
100+4.15 EUR
500+3.44 EUR
Mindestbestellmenge: 3 Stücke
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SSM3K09FU,LF SSM3K09FU_datasheet_en_20140301.pdf?did=19599&prodName=SSM3K09FU
SSM3K09FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 400MA USM
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.13 EUR
15000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3K09FU,LF SSM3K09FU_datasheet_en_20140301.pdf?did=19599&prodName=SSM3K09FU
SSM3K09FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 400MA USM
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 33255 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
41+0.51 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 25 Stücke
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2SA1931(NOMARK,A,Q 2SA1931.pdf
2SA1931(NOMARK,A,Q
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SA1931,NETQ(M 2SA1931.pdf
2SA1931,NETQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO220NIS
Produkt ist nicht verfügbar
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2SA1931,NIKKIQ(J 2SA1931.pdf
2SA1931,NIKKIQ(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO220NIS
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Produkt ist nicht verfügbar
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2SA1931,BOSCHQ(J 2SA1931.pdf
2SA1931,BOSCHQ(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SA1931,KEHINQ(M 2SA1931.pdf
2SA1931,KEHINQ(M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO-220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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2SA1931,SINFQ(J 2SA1931.pdf
2SA1931,SINFQ(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO220NIS
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: TO-220NIS
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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