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DF2S6M4SL,L3F DF2S6M4SL,L3F Toshiba Semiconductor and Storage DF2S6M4SL_datasheet_en_20220818.pdf?did=36252&prodName=DF2S6M4SL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 20000 Stücke:
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10000+0.057 EUR
20000+0.049 EUR
Mindestbestellmenge: 10000
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DF2S6M4SL,L3F DF2S6M4SL,L3F Toshiba Semiconductor and Storage DF2S6M4SL_datasheet_en_20220818.pdf?did=36252&prodName=DF2S6M4SL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 40928 Stücke:
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67+0.26 EUR
97+0.18 EUR
223+0.079 EUR
500+0.075 EUR
1000+0.071 EUR
2000+0.069 EUR
5000+0.067 EUR
Mindestbestellmenge: 67
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DF2B6M4ASL,L3F DF2B6M4ASL,L3F Toshiba Semiconductor and Storage DF2B6M4ASL_datasheet_en_20190805.pdf?did=66266&prodName=DF2B6M4ASL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B6M4ASL,L3F DF2B6M4ASL,L3F Toshiba Semiconductor and Storage DF2B6M4ASL_datasheet_en_20190805.pdf?did=66266&prodName=DF2B6M4ASL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 10888 Stücke:
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31+0.58 EUR
44+0.4 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.099 EUR
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CUHZ36V,H3F CUHZ36V,H3F Toshiba Semiconductor and Storage CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V Description: TVS DIODE 36VWM 41.2VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34V
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
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3000+0.15 EUR
6000+0.14 EUR
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CUHZ36V,H3F CUHZ36V,H3F Toshiba Semiconductor and Storage CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V Description: TVS DIODE 36VWM 41.2VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34V
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 6907 Stücke:
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24+0.76 EUR
38+0.47 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
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TB67S111PG,HJ TB67S111PG,HJ Toshiba Semiconductor and Storage docget.jsp?did=57940&prodName=TB67S111PG Description: IC MOTOR DRIVER 16DIP
Packaging: Tray
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 0V ~ 80V
Supplier Device Package: 16-DIP
Motor Type - Stepper: Unipolar
Part Status: Active
auf Bestellung 284 Stücke:
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3+8.08 EUR
10+7.25 EUR
25+6.85 EUR
80+5.94 EUR
230+5.63 EUR
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TCR3DF39,LM(CT TCR3DF39,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF39 Description: IC REG LINEAR 3.9V 300MA SMV
auf Bestellung 3000 Stücke:
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3000+0.16 EUR
Mindestbestellmenge: 3000
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TCR3DF39,LM(CT TCR3DF39,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF39 Description: IC REG LINEAR 3.9V 300MA SMV
auf Bestellung 5592 Stücke:
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21+0.84 EUR
29+0.62 EUR
33+0.55 EUR
100+0.35 EUR
250+0.29 EUR
500+0.23 EUR
1000+0.18 EUR
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TCR2EN11,LF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.1V IOUT=200MA
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10000+0.13 EUR
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TCR2EN11,LF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.1V IOUT=200MA
auf Bestellung 10000 Stücke:
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26+0.69 EUR
34+0.53 EUR
37+0.48 EUR
100+0.33 EUR
250+0.28 EUR
500+0.23 EUR
1000+0.17 EUR
2500+0.16 EUR
5000+0.15 EUR
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TCR2EN115,LF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.5V IOUT=200MA
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10000+0.13 EUR
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TCR2EN115,LF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.5V IOUT=200MA
auf Bestellung 10000 Stücke:
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26+0.69 EUR
34+0.53 EUR
37+0.48 EUR
100+0.33 EUR
250+0.28 EUR
500+0.23 EUR
1000+0.17 EUR
2500+0.16 EUR
5000+0.15 EUR
Mindestbestellmenge: 26
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CLS01(T6LSONY,Q) Toshiba Semiconductor and Storage CMS01_Nov2013.pdf Description: DIODE SCHOTTKY 30V 10A L-FLAT
Produkt ist nicht verfügbar
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RN2418,LXHF RN2418,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
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3000+0.093 EUR
6000+0.084 EUR
Mindestbestellmenge: 3000
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RN2418,LXHF RN2418,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
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39+0.46 EUR
Mindestbestellmenge: 39
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RN2416,LXHF RN2416,LXHF Toshiba Semiconductor and Storage RN2416_datasheet_en_20210830.pdf?did=18883&prodName=RN2416 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.095 EUR
Mindestbestellmenge: 3000
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RN2416,LXHF RN2416,LXHF Toshiba Semiconductor and Storage RN2416_datasheet_en_20210830.pdf?did=18883&prodName=RN2416 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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TK1R4F04PB,LXGQ TK1R4F04PB,LXGQ Toshiba Semiconductor and Storage TK1R4F04PB_datasheet_en_20200624.pdf?did=30508&prodName=TK1R4F04PB Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 1000 Stücke:
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1000+1.91 EUR
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TK1R4F04PB,LXGQ TK1R4F04PB,LXGQ Toshiba Semiconductor and Storage TK1R4F04PB_datasheet_en_20200624.pdf?did=30508&prodName=TK1R4F04PB Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 1000 Stücke:
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4+5.58 EUR
10+3.64 EUR
100+2.53 EUR
500+2.06 EUR
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CUHZ8V2,H3F CUHZ8V2,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ8V2 Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
auf Bestellung 3000 Stücke:
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3000+0.12 EUR
Mindestbestellmenge: 3000
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CUHZ8V2,H3F CUHZ8V2,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ8V2 Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
auf Bestellung 5375 Stücke:
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28+0.65 EUR
44+0.4 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 28
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2SC4604,T6F(M 2SC4604,T6F(M Toshiba Semiconductor and Storage 2SC4604_2006-11-10.pdf Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SC4604,T6F(J 2SC4604,T6F(J Toshiba Semiconductor and Storage 2SC4604_2006-11-10.pdf Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SC4604,F(J 2SC4604,F(J Toshiba Semiconductor and Storage 2SC4604_2006-11-10.pdf Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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TODX2350A(F) Toshiba Semiconductor and Storage TODX2350A%28F%29_datasheet_en_20160614.pdf?did=53317&prodName=TODX2350A(F) Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Produkt ist nicht verfügbar
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TLP781F(TP7,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP2395(E TLP2395(E Toshiba Semiconductor and Storage Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP2398(TPL,E TLP2398(TPL,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP2398(E TLP2398(E Toshiba Semiconductor and Storage Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP2395(TPL,E TLP2395(TPL,E Toshiba Semiconductor and Storage Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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SSM6L56FE,LM SSM6L56FE,LM Toshiba Semiconductor and Storage docget.jsp?did=66256&prodName=SSM6L56FE Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
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SSM6L56FE,LM SSM6L56FE,LM Toshiba Semiconductor and Storage docget.jsp?did=66256&prodName=SSM6L56FE Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
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TLX9185(TOJGBTLF(O Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLX9291(TOJGBTLF(O Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TCR3RM29A,LF(SE TCR3RM29A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG 2.9V 300MA 4DFNC
Produkt ist nicht verfügbar
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TCR3RM29A,LF(SE TCR3RM29A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG 2.9V 300MA 4DFNC
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1000+0.24 EUR
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TCR3RM29A,LF TCR3RM29A,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 2.9V 300MA 4DFNC
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TCR3RM29A,LF TCR3RM29A,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 2.9V 300MA 4DFNC
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TCR2EN10,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG 3.3V 200MA 4DFNC
auf Bestellung 10000 Stücke:
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TCR2EN10,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: LDO REG 3.3V 200MA 4DFNC
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TC78B011FTG,EL TC78B011FTG,EL Toshiba Semiconductor and Storage TC78B011FTG_datasheet_en_20220810.pdf?did=140801&prodName=TC78B011FTG Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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TC78B011FTG,EL TC78B011FTG,EL Toshiba Semiconductor and Storage TC78B011FTG_datasheet_en_20220810.pdf?did=140801&prodName=TC78B011FTG Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 6353 Stücke:
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100+2.61 EUR
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500+2.38 EUR
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TLP759(D4MBIMT1J,F Toshiba Semiconductor and Storage TLP759_6-10-19.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP759(D4KEBIMT1JF Toshiba Semiconductor and Storage TLP759_6-10-19.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP759(D4IM-T1,J,F Toshiba Semiconductor and Storage TLP759_6-10-19.pdf Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TB67S261FTG,EL TB67S261FTG,EL Toshiba Semiconductor and Storage TB67S261FTG_datasheet_en_20150603.pdf?did=30103&prodName=TB67S261FTG Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB67S261FTG,EL TB67S261FTG,EL Toshiba Semiconductor and Storage TB67S261FTG_datasheet_en_20150603.pdf?did=30103&prodName=TB67S261FTG Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
auf Bestellung 170 Stücke:
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4+5.68 EUR
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TB67S269FTG,EL TB67S269FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=15602&prodName=TB67S269FTG Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
Produkt ist nicht verfügbar
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TB67S269FTG,EL TB67S269FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=15602&prodName=TB67S269FTG Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
auf Bestellung 3974 Stücke:
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3+6.16 EUR
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TK12J60W,S1VE(S TK12J60W,S1VE(S Toshiba Semiconductor and Storage Description: MOSFET N-CH 600V 11.5A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK11S10N1L,LQ TK11S10N1L,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 100V 11A DPAK
Produkt ist nicht verfügbar
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TCK207AN,LF Toshiba Semiconductor and Storage docget.jsp?did=63537&prodName=TCK207AN Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 5000 Stücke:
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5000+0.52 EUR
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TCK207AN,LF Toshiba Semiconductor and Storage docget.jsp?did=63537&prodName=TCK207AN Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
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16+1.16 EUR
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TCK127BG,LF TCK127BG,LF Toshiba Semiconductor and Storage TCK127BG_datasheet_en_20211028.pdf?did=140423&prodName=TCK127BG Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Produkt ist nicht verfügbar
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TCK127BG,LF TCK127BG,LF Toshiba Semiconductor and Storage TCK127BG_datasheet_en_20211028.pdf?did=140423&prodName=TCK127BG Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
auf Bestellung 4468 Stücke:
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16+1.13 EUR
27+0.67 EUR
32+0.55 EUR
100+0.42 EUR
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1000+0.28 EUR
2500+0.24 EUR
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TCK128BG,LF TCK128BG,LF Toshiba Semiconductor and Storage TCK128BG_datasheet_en_20211028.pdf?did=140425&prodName=TCK128BG Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Produkt ist nicht verfügbar
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TCK128BG,LF TCK128BG,LF Toshiba Semiconductor and Storage TCK128BG_datasheet_en_20211028.pdf?did=140425&prodName=TCK128BG Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
auf Bestellung 1429 Stücke:
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16+1.13 EUR
27+0.67 EUR
32+0.55 EUR
100+0.42 EUR
250+0.35 EUR
500+0.31 EUR
1000+0.28 EUR
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TCR2EF45,LM(CT TCR2EF45,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 4.5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
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TCR2EF45,LM(CT TCR2EF45,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 4.5V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 6131 Stücke:
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30+0.6 EUR
51+0.35 EUR
62+0.29 EUR
100+0.21 EUR
250+0.18 EUR
500+0.15 EUR
1000+0.14 EUR
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DF2S6M4SL,L3F DF2S6M4SL_datasheet_en_20220818.pdf?did=36252&prodName=DF2S6M4SL
DF2S6M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 20000 Stücke:
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10000+0.057 EUR
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DF2S6M4SL,L3F DF2S6M4SL_datasheet_en_20220818.pdf?did=36252&prodName=DF2S6M4SL
DF2S6M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 40928 Stücke:
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67+0.26 EUR
97+0.18 EUR
223+0.079 EUR
500+0.075 EUR
1000+0.071 EUR
2000+0.069 EUR
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DF2B6M4ASL,L3F DF2B6M4ASL_datasheet_en_20190805.pdf?did=66266&prodName=DF2B6M4ASL
DF2B6M4ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B6M4ASL,L3F DF2B6M4ASL_datasheet_en_20190805.pdf?did=66266&prodName=DF2B6M4ASL
DF2B6M4ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 10888 Stücke:
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Anzahl Preis
31+0.58 EUR
44+0.4 EUR
100+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.099 EUR
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CUHZ36V,H3F CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V
CUHZ36V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 41.2VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34V
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 6000 Stücke:
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3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 3000
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CUHZ36V,H3F CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V
CUHZ36V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 41.2VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 105pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34V
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
auf Bestellung 6907 Stücke:
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Anzahl Preis
24+0.76 EUR
38+0.47 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
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TB67S111PG,HJ docget.jsp?did=57940&prodName=TB67S111PG
TB67S111PG,HJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16DIP
Packaging: Tray
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 0V ~ 80V
Supplier Device Package: 16-DIP
Motor Type - Stepper: Unipolar
Part Status: Active
auf Bestellung 284 Stücke:
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Anzahl Preis
3+8.08 EUR
10+7.25 EUR
25+6.85 EUR
80+5.94 EUR
230+5.63 EUR
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TCR3DF39,LM(CT docget.jsp?did=14709&prodName=TCR3DF39
TCR3DF39,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 300MA SMV
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Anzahl Preis
3000+0.16 EUR
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TCR3DF39,LM(CT docget.jsp?did=14709&prodName=TCR3DF39
TCR3DF39,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 300MA SMV
auf Bestellung 5592 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
29+0.62 EUR
33+0.55 EUR
100+0.35 EUR
250+0.29 EUR
500+0.23 EUR
1000+0.18 EUR
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TCR2EN11,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V IOUT=200MA
auf Bestellung 10000 Stücke:
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10000+0.13 EUR
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TCR2EN11,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V IOUT=200MA
auf Bestellung 10000 Stücke:
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26+0.69 EUR
34+0.53 EUR
37+0.48 EUR
100+0.33 EUR
250+0.28 EUR
500+0.23 EUR
1000+0.17 EUR
2500+0.16 EUR
5000+0.15 EUR
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TCR2EN115,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
auf Bestellung 10000 Stücke:
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10000+0.13 EUR
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TCR2EN115,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
34+0.53 EUR
37+0.48 EUR
100+0.33 EUR
250+0.28 EUR
500+0.23 EUR
1000+0.17 EUR
2500+0.16 EUR
5000+0.15 EUR
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CLS01(T6LSONY,Q) CMS01_Nov2013.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 10A L-FLAT
Produkt ist nicht verfügbar
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RN2418,LXHF docget.jsp?did=18883&prodName=RN2418
RN2418,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
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3000+0.093 EUR
6000+0.084 EUR
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RN2418,LXHF docget.jsp?did=18883&prodName=RN2418
RN2418,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6000 Stücke:
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Anzahl Preis
39+0.46 EUR
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RN2416,LXHF RN2416_datasheet_en_20210830.pdf?did=18883&prodName=RN2416
RN2416,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.11 EUR
6000+0.095 EUR
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RN2416,LXHF RN2416_datasheet_en_20210830.pdf?did=18883&prodName=RN2416
RN2416,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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TK1R4F04PB,LXGQ TK1R4F04PB_datasheet_en_20200624.pdf?did=30508&prodName=TK1R4F04PB
TK1R4F04PB,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
1000+1.91 EUR
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TK1R4F04PB,LXGQ TK1R4F04PB_datasheet_en_20200624.pdf?did=30508&prodName=TK1R4F04PB
TK1R4F04PB,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
10+3.64 EUR
100+2.53 EUR
500+2.06 EUR
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CUHZ8V2,H3F docget.jsp?did=70664&prodName=CUHZ8V2
CUHZ8V2,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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CUHZ8V2,H3F docget.jsp?did=70664&prodName=CUHZ8V2
CUHZ8V2,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 8.5VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 450pF @ 1MHz
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Voltage - Reverse Standoff (Typ): 8.2V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.7V
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Power - Peak Pulse: 1900W (1.9kW)
Power Line Protection: No
auf Bestellung 5375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
44+0.4 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 28
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2SC4604,T6F(M 2SC4604_2006-11-10.pdf
2SC4604,T6F(M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SC4604,T6F(J 2SC4604_2006-11-10.pdf
2SC4604,T6F(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SC4604,F(J 2SC4604_2006-11-10.pdf
2SC4604,F(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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TODX2350A(F) TODX2350A%28F%29_datasheet_en_20160614.pdf?did=53317&prodName=TODX2350A(F)
Hersteller: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 10MBPS 650NM
Packaging: Bulk
Connector Type: JIS F07
Wavelength: 650nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Produkt ist nicht verfügbar
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TLP781F(TP7,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP2395(E
TLP2395(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP2398(TPL,E
TLP2398(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP2398(E
TLP2398(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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TLP2395(TPL,E
TLP2395(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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SSM6L56FE,LM docget.jsp?did=66256&prodName=SSM6L56FE
SSM6L56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.063 EUR
8000+0.062 EUR
Mindestbestellmenge: 4000
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SSM6L56FE,LM docget.jsp?did=66256&prodName=SSM6L56FE
SSM6L56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 96882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
59+0.3 EUR
121+0.15 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 38
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TLX9185(TOJGBTLF(O
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLX9291(TOJGBTLF(O
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TCR3RM29A,LF(SE
TCR3RM29A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 2.9V 300MA 4DFNC
Produkt ist nicht verfügbar
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TCR3RM29A,LF(SE
TCR3RM29A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 2.9V 300MA 4DFNC
auf Bestellung 8900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
29+0.62 EUR
32+0.56 EUR
100+0.42 EUR
250+0.38 EUR
500+0.32 EUR
1000+0.24 EUR
2500+0.22 EUR
5000+0.2 EUR
Mindestbestellmenge: 24
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TCR3RM29A,LF
TCR3RM29A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA 4DFNC
Produkt ist nicht verfügbar
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TCR3RM29A,LF
TCR3RM29A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA 4DFNC
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
29+0.63 EUR
31+0.58 EUR
100+0.43 EUR
250+0.39 EUR
Mindestbestellmenge: 23
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TCR2EN10,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 3.3V 200MA 4DFNC
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.12 EUR
Mindestbestellmenge: 10000
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TCR2EN10,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 3.3V 200MA 4DFNC
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
37+0.48 EUR
41+0.43 EUR
100+0.3 EUR
250+0.25 EUR
500+0.2 EUR
1000+0.16 EUR
2500+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 28
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TC78B011FTG,EL TC78B011FTG_datasheet_en_20220810.pdf?did=140801&prodName=TC78B011FTG
TC78B011FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Tape & Reel (TR)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
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TC78B011FTG,EL TC78B011FTG_datasheet_en_20220810.pdf?did=140801&prodName=TC78B011FTG
TC78B011FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 3-PHASE BRUSHLESS MOTOR CONTROLL
Packaging: Cut Tape (CT)
Package / Case: 36-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 240mA
Interface: I2C
Operating Temperature: -40°C ~ 105°C
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 27V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: 36-WQFN (5x5)
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 6353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+3.18 EUR
25+2.91 EUR
100+2.61 EUR
250+2.47 EUR
500+2.38 EUR
1000+2.31 EUR
2500+2.24 EUR
Mindestbestellmenge: 5
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TLP759(D4MBIMT1J,F TLP759_6-10-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP759(D4KEBIMT1JF TLP759_6-10-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TLP759(D4IM-T1,J,F TLP759_6-10-19.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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TB67S261FTG,EL TB67S261FTG_datasheet_en_20150603.pdf?did=30103&prodName=TB67S261FTG
TB67S261FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TB67S261FTG,EL TB67S261FTG_datasheet_en_20150603.pdf?did=30103&prodName=TB67S261FTG
TB67S261FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/4
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.68 EUR
10+3.63 EUR
25+3.1 EUR
100+2.49 EUR
Mindestbestellmenge: 4
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TB67S269FTG,EL docget.jsp?did=15602&prodName=TB67S269FTG
TB67S269FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
Produkt ist nicht verfügbar
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TB67S269FTG,EL docget.jsp?did=15602&prodName=TB67S269FTG
TB67S269FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER BIPOLAR 48WQFN
Packaging: Cut Tape (CT)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 48-WQFN (7x7)
Motor Type - Stepper: Bipolar
Step Resolution: 1 ~ 1/32
auf Bestellung 3974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.16 EUR
10+3.95 EUR
25+3.37 EUR
100+2.72 EUR
250+2.39 EUR
500+2.2 EUR
1000+2.03 EUR
Mindestbestellmenge: 3
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TK12J60W,S1VE(S
TK12J60W,S1VE(S
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO3P
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Produkt ist nicht verfügbar
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TK11S10N1L,LQ
TK11S10N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 11A DPAK
Produkt ist nicht verfügbar
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TCK207AN,LF docget.jsp?did=63537&prodName=TCK207AN
Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.52 EUR
Mindestbestellmenge: 5000
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TCK207AN,LF docget.jsp?did=63537&prodName=TCK207AN
Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, 0.75-3.6V/2.0A ,
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 21.5mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-DFNA (1.2x1.2)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 9868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
22+0.83 EUR
25+0.74 EUR
100+0.65 EUR
250+0.61 EUR
500+0.58 EUR
1000+0.56 EUR
2500+0.53 EUR
Mindestbestellmenge: 16
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TCK127BG,LF TCK127BG_datasheet_en_20211028.pdf?did=140423&prodName=TCK127BG
TCK127BG,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Produkt ist nicht verfügbar
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TCK127BG,LF TCK127BG_datasheet_en_20211028.pdf?did=140423&prodName=TCK127BG
TCK127BG,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
auf Bestellung 4468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
27+0.67 EUR
32+0.55 EUR
100+0.42 EUR
250+0.35 EUR
500+0.31 EUR
1000+0.28 EUR
2500+0.24 EUR
Mindestbestellmenge: 16
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TCK128BG,LF TCK128BG_datasheet_en_20211028.pdf?did=140425&prodName=TCK128BG
TCK128BG,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
Produkt ist nicht verfügbar
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TCK128BG,LF TCK128BG_datasheet_en_20211028.pdf?did=140425&prodName=TCK128BG
TCK128BG,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH IC, V=1.0V-5.5V, IOU
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 343mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSPG (0.65x0.65)
Part Status: Active
auf Bestellung 1429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
27+0.67 EUR
32+0.55 EUR
100+0.42 EUR
250+0.35 EUR
500+0.31 EUR
1000+0.28 EUR
Mindestbestellmenge: 16
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TCR2EF45,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EF45,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
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TCR2EF45,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EF45,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 6131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
51+0.35 EUR
62+0.29 EUR
100+0.21 EUR
250+0.18 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 30
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