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TLP781F(D4GRL-F7,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP781F(D4-Y-FD,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Produkt ist nicht verfügbar
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TLP781F(BL,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781F(GR-TP7,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP781F(GRL-TP7,F) TLP781F(GRL-TP7,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP781F(D4GRT7TC,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Produkt ist nicht verfügbar
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TLP781F(D4YH-LF7,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP781F(D4GR-LF7,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 5mA
Produkt ist nicht verfügbar
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TLP781F(LF7,F) TLP781F(LF7,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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TW140N120C,S1F TW140N120C,S1F Toshiba Semiconductor and Storage docget.jsp?did=143253&prodName=TW140N120C Description: G3 1200V SIC-MOSFET TO-247 140M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.78 EUR
30+10.39 EUR
Mindestbestellmenge: 2 Stücke
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TW107N65C,S1F TW107N65C,S1F Toshiba Semiconductor and Storage TW107N65C_datasheet_en_20240913.pdf?did=143304&prodName=TW107N65C Description: G3 650V SIC-MOSFET TO-247 107MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.45 EUR
30+7.69 EUR
60+7 EUR
120+6.41 EUR
Mindestbestellmenge: 2 Stücke
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TW015N120C,S1F TW015N120C,S1F Toshiba Semiconductor and Storage TW015N120C_datasheet_en_20240912.pdf?did=143221&prodName=TW015N120C Description: G3 1200V SIC-MOSFET TO-247 15MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
auf Bestellung 48 Stücke:
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1+70.83 EUR
30+46.89 EUR
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MG08ADA400E Toshiba Semiconductor and Storage ehdd-mg08-d-product-overview_rev0s.pdf Description: HDD 4TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Produkt ist nicht verfügbar
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MG08ADA600E MG08ADA600E Toshiba Semiconductor and Storage ehdd-mg08-d-product-overview_rev0s.pdf Description: HDD 6TB 3.5" SATA III 5V-12V
Memory Size: 6TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
auf Bestellung 39 Stücke:
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1+513.51 EUR
20+439.44 EUR
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MG08ADA400N MG08ADA400N Toshiba Semiconductor and Storage ehdd-mg08-d-product-overview_rev0s.pdf Description: HDD 4TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
auf Bestellung 20 Stücke:
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1+423.46 EUR
20+362.4 EUR
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TLP185(GB-TPR,SE TLP185(GB-TPR,SE Toshiba Semiconductor and Storage TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.32 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.29 EUR
Mindestbestellmenge: 3000 Stücke
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TLP185(GB-TPR,SE TLP185(GB-TPR,SE Toshiba Semiconductor and Storage TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 28854 Stücke:
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23+0.94 EUR
33+0.65 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.36 EUR
Mindestbestellmenge: 23 Stücke
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TLP781F(D4-TELS,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Produkt ist nicht verfügbar
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TLP781F(YH-LF7,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP785(D4-BL,F Toshiba Semiconductor and Storage docget.jsp?did=10569&prodName=TLP785 Description: PHOTOCOUPLER TRANS OUT
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TLP785(D4B-T6,F Toshiba Semiconductor and Storage docget.jsp?did=10569&prodName=TLP785 Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Produkt ist nicht verfügbar
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TLP785F(BL-LF7,F TLP785F(BL-LF7,F Toshiba Semiconductor and Storage TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP2955F(TP4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2955F(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Produkt ist nicht verfügbar
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TLP2955(D4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Produkt ist nicht verfügbar
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TLP2955(D4-TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2955(MBD,F) Toshiba Semiconductor and Storage TLP2955_Rev2.0_2-17-16.pdf Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2955(TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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TCR5RG14A,LF TCR5RG14A,LF Toshiba Semiconductor and Storage TCR5RG09A_datasheet_en_20230608.pdf?did=70203&prodName=TCR5RG09A Description: LDO REG, IOUT: 500MA VOUT: 1.4V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 1.4V
auf Bestellung 5000 Stücke:
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5000+0.27 EUR
Mindestbestellmenge: 5000 Stücke
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TCR5RG14A,LF TCR5RG14A,LF Toshiba Semiconductor and Storage TCR5RG09A_datasheet_en_20230608.pdf?did=70203&prodName=TCR5RG09A Description: LDO REG, IOUT: 500MA VOUT: 1.4V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 1.4V
auf Bestellung 9836 Stücke:
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28+0.76 EUR
100+0.56 EUR
250+0.51 EUR
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1000+0.32 EUR
2500+0.29 EUR
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MG08ADA800E MG08ADA800E Toshiba Semiconductor and Storage ehdd-mg08-d-product-overview_rev0s.pdf Description: HDD 8TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 8TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
auf Bestellung 55 Stücke:
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1+499.2 EUR
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TW015N65C,S1F TW015N65C,S1F Toshiba Semiconductor and Storage TW015N65C_datasheet_en_20240912.pdf?did=143225&prodName=TW015N65C Description: G3 650V SIC-MOSFET TO-247 15MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 16 Stücke:
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TPH9R506PL,LQ TPH9R506PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=55559&prodName=TPH9R506PL Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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TPH9R506PL,LQ TPH9R506PL,LQ Toshiba Semiconductor and Storage docget.jsp?did=55559&prodName=TPH9R506PL Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 15811 Stücke:
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TCR5RG18A,LF TCR5RG18A,LF Toshiba Semiconductor and Storage docget.jsp?did=70203&prodName=TCR5RG18A Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 45000 Stücke:
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TCR5RG18A,LF TCR5RG18A,LF Toshiba Semiconductor and Storage docget.jsp?did=70203&prodName=TCR5RG18A Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 49547 Stücke:
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56+0.38 EUR
63+0.33 EUR
100+0.29 EUR
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1000+0.24 EUR
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TCR3RM28A,LF(SE TCR3RM28A,LF(SE Toshiba Semiconductor and Storage TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3RM28A,LF(SE TCR3RM28A,LF(SE Toshiba Semiconductor and Storage TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5610 Stücke:
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27+0.79 EUR
30+0.71 EUR
100+0.54 EUR
250+0.48 EUR
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1000+0.3 EUR
2500+0.27 EUR
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TCR2LN18,LF(SE TCR2LN18,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=2.5V I=200MA
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TCR2LN18,LF(SE TCR2LN18,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: LDO REG VOUT=2.5V I=200MA
auf Bestellung 14320 Stücke:
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28+0.75 EUR
37+0.57 EUR
41+0.51 EUR
100+0.36 EUR
250+0.3 EUR
500+0.24 EUR
1000+0.19 EUR
2500+0.17 EUR
5000+0.15 EUR
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TCR2EN18,LF(SE TCR2EN18,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: IC REG LINEAR 1.8V 200MA 4-SDFN
Produkt ist nicht verfügbar
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TCR2EN18,LF(SE TCR2EN18,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: IC REG LINEAR 1.8V 200MA 4-SDFN
auf Bestellung 7696 Stücke:
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1000+0.14 EUR
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TCR2LN18,LSF(SE TCR2LN18,LSF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.8V I=200MA
auf Bestellung 20000 Stücke:
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TCR2LN18,LSF(SE TCR2LN18,LSF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.8V I=200MA
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1000+0.2 EUR
2500+0.19 EUR
5000+0.18 EUR
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TCR3UM18A,LF(SE TCR3UM18A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Produkt ist nicht verfügbar
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TCR3UM18A,LF(SE TCR3UM18A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG IOUT: 300MA VIN: 6V VOUT
auf Bestellung 3608 Stücke:
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SSM6J212FE,LF SSM6J212FE,LF Toshiba Semiconductor and Storage docget.jsp?did=1906&prodName=SSM6J212FE Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM6J212FE,LF SSM6J212FE,LF Toshiba Semiconductor and Storage docget.jsp?did=1906&prodName=SSM6J212FE Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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CUZ20V,H3F CUZ20V,H3F Toshiba Semiconductor and Storage docget.jsp?did=155999&prodName=CUZ20V Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
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CUZ20V,H3F CUZ20V,H3F Toshiba Semiconductor and Storage docget.jsp?did=155999&prodName=CUZ20V Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 6883 Stücke:
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MUZ20V,LF MUZ20V,LF Toshiba Semiconductor and Storage Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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MUZ20V,LF MUZ20V,LF Toshiba Semiconductor and Storage Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5990 Stücke:
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MSZ20V,LF MSZ20V,LF Toshiba Semiconductor and Storage Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
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MSZ20V,LF MSZ20V,LF Toshiba Semiconductor and Storage Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5970 Stücke:
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34+0.63 EUR
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CEZ20V,L3F CEZ20V,L3F Toshiba Semiconductor and Storage docget.jsp?did=155995&prodName=CEZ20V Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
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CEZ20V,L3F CEZ20V,L3F Toshiba Semiconductor and Storage docget.jsp?did=155995&prodName=CEZ20V Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 4889 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
110+0.19 EUR
231+0.09 EUR
500+0.087 EUR
1000+0.083 EUR
2000+0.082 EUR
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CUHZ20V,H3F CUHZ20V,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ20V Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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3000+0.15 EUR
6000+0.14 EUR
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CUHZ20V,H3F CUHZ20V,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ20V Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 11967 Stücke:
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45+0.46 EUR
100+0.35 EUR
500+0.26 EUR
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RN1104,LXHF(CT RN1104,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1105 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN1104,LXHF(CT RN1104,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1105 Description: TRANS PREBIAS NPN 50V 0.1A SSM
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TLP781F(D4GRL-F7,F TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP781F(D4-Y-FD,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Produkt ist nicht verfügbar
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TLP781F(BL,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781F(GR-TP7,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
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TLP781F(GRL-TP7,F) TLP781(F).pdf
TLP781F(GRL-TP7,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP781F(D4GRT7TC,F TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Produkt ist nicht verfügbar
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TLP781F(D4YH-LF7,F TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP781F(D4GR-LF7,F TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 5mA
Produkt ist nicht verfügbar
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TLP781F(LF7,F) TLP781(F).pdf
TLP781F(LF7,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
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TW140N120C,S1F docget.jsp?did=143253&prodName=TW140N120C
TW140N120C,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 140M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
auf Bestellung 30 Stücke:
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2+17.78 EUR
30+10.39 EUR
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TW107N65C,S1F TW107N65C_datasheet_en_20240913.pdf?did=143304&prodName=TW107N65C
TW107N65C,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 107MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 466 Stücke:
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2+13.45 EUR
30+7.69 EUR
60+7 EUR
120+6.41 EUR
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TW015N120C,S1F TW015N120C_datasheet_en_20240912.pdf?did=143221&prodName=TW015N120C
TW015N120C,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 15MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
auf Bestellung 48 Stücke:
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1+70.83 EUR
30+46.89 EUR
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MG08ADA400E ehdd-mg08-d-product-overview_rev0s.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Produkt ist nicht verfügbar
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MG08ADA600E ehdd-mg08-d-product-overview_rev0s.pdf
MG08ADA600E
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 6TB 3.5" SATA III 5V-12V
Memory Size: 6TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
auf Bestellung 39 Stücke:
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1+513.51 EUR
20+439.44 EUR
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MG08ADA400N ehdd-mg08-d-product-overview_rev0s.pdf
MG08ADA400N
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 4TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
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AnzahlPrivatkunde
1+423.46 EUR
20+362.4 EUR
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TLP185(GB-TPR,SE TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE
TLP185(GB-TPR,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.32 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.29 EUR
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TLP185(GB-TPR,SE TLP185%28SE_datasheet_en_20191118.pdf?did=14111&prodName=TLP185(SE
TLP185(GB-TPR,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 28854 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
33+0.65 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.36 EUR
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TLP781F(D4-TELS,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Produkt ist nicht verfügbar
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TLP781F(YH-LF7,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP785(D4-BL,F docget.jsp?did=10569&prodName=TLP785
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Produkt ist nicht verfügbar
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TLP785(D4B-T6,F docget.jsp?did=10569&prodName=TLP785
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Produkt ist nicht verfügbar
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TLP785F(BL-LF7,F TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F
TLP785F(BL-LF7,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP2955F(TP4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2955F(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Produkt ist nicht verfügbar
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TLP2955(D4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 16ns, 14ns
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Produkt ist nicht verfügbar
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TLP2955(D4-TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2955(MBD,F) TLP2955_Rev2.0_2-17-16.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Output Type: Push-Pull, Totem Pole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2955(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.55V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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TCR5RG14A,LF TCR5RG09A_datasheet_en_20230608.pdf?did=70203&prodName=TCR5RG09A
TCR5RG14A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.4V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 1.4V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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5000+0.27 EUR
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TCR5RG14A,LF TCR5RG09A_datasheet_en_20230608.pdf?did=70203&prodName=TCR5RG09A
TCR5RG14A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG, IOUT: 500MA VOUT: 1.4V
Supplier Device Package: 4-WCSPF (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 13 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Over Current, Over Temperature
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage - Output (Min/Fixed): 1.4V
auf Bestellung 9836 Stücke:
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21+1.02 EUR
26+0.83 EUR
28+0.76 EUR
100+0.56 EUR
250+0.51 EUR
500+0.43 EUR
1000+0.32 EUR
2500+0.29 EUR
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MG08ADA800E ehdd-mg08-d-product-overview_rev0s.pdf
MG08ADA800E
Hersteller: Toshiba Semiconductor and Storage
Description: HDD 8TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 8TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
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1+499.2 EUR
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TW015N65C,S1F TW015N65C_datasheet_en_20240912.pdf?did=143225&prodName=TW015N65C
TW015N65C,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 15MOH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
Power Dissipation (Max): 342W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 18
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
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1+31.55 EUR
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TPH9R506PL,LQ docget.jsp?did=55559&prodName=TPH9R506PL
TPH9R506PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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3000+0.58 EUR
9000+0.52 EUR
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TPH9R506PL,LQ docget.jsp?did=55559&prodName=TPH9R506PL
TPH9R506PL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1910 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 830mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 15811 Stücke:
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10+2.32 EUR
15+1.45 EUR
50+1.08 EUR
100+0.95 EUR
500+0.74 EUR
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TCR5RG18A,LF docget.jsp?did=70203&prodName=TCR5RG18A
TCR5RG18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 45000 Stücke:
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5000+0.23 EUR
10000+0.21 EUR
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TCR5RG18A,LF docget.jsp?did=70203&prodName=TCR5RG18A
TCR5RG18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 500MA 4-WCSPF
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.29V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 49547 Stücke:
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39+0.55 EUR
56+0.38 EUR
63+0.33 EUR
100+0.29 EUR
250+0.26 EUR
500+0.25 EUR
1000+0.24 EUR
2500+0.23 EUR
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TCR3RM28A,LF(SE TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A
TCR3RM28A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3RM28A,LF(SE TCR3RM33A_datasheet_en_20220705.pdf?did=69842&prodName=TCR3RM33A
TCR3RM28A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 2.8V 300MA 4DFNC
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFNC (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Current Limit, Enable
Part Status: Active
PSRR: 100dB ~ 68dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.15V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5610 Stücke:
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22+0.96 EUR
27+0.79 EUR
30+0.71 EUR
100+0.54 EUR
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500+0.39 EUR
1000+0.3 EUR
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TCR2LN18,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN18,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
auf Bestellung 10000 Stücke:
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10000+0.14 EUR
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TCR2LN18,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN18,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=2.5V I=200MA
auf Bestellung 14320 Stücke:
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28+0.75 EUR
37+0.57 EUR
41+0.51 EUR
100+0.36 EUR
250+0.3 EUR
500+0.24 EUR
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TCR2EN18,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
TCR2EN18,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA 4-SDFN
Produkt ist nicht verfügbar
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TCR2EN18,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
TCR2EN18,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA 4-SDFN
auf Bestellung 7696 Stücke:
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59+0.36 EUR
88+0.24 EUR
100+0.21 EUR
118+0.18 EUR
250+0.17 EUR
500+0.15 EUR
1000+0.14 EUR
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TCR2LN18,LSF(SE
TCR2LN18,LSF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V I=200MA
auf Bestellung 20000 Stücke:
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10000+0.15 EUR
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TCR2LN18,LSF(SE
TCR2LN18,LSF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.8V I=200MA
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26+0.82 EUR
34+0.63 EUR
37+0.57 EUR
100+0.39 EUR
250+0.33 EUR
500+0.27 EUR
1000+0.2 EUR
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5000+0.18 EUR
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TCR3UM18A,LF(SE
TCR3UM18A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Produkt ist nicht verfügbar
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TCR3UM18A,LF(SE
TCR3UM18A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
auf Bestellung 3608 Stücke:
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21+1 EUR
28+0.76 EUR
31+0.69 EUR
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SSM6J212FE,LF docget.jsp?did=1906&prodName=SSM6J212FE
SSM6J212FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM6J212FE,LF docget.jsp?did=1906&prodName=SSM6J212FE
SSM6J212FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A ES6
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: ES6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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CUZ20V,H3F docget.jsp?did=155999&prodName=CUZ20V
CUZ20V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.11 EUR
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CUZ20V,H3F docget.jsp?did=155999&prodName=CUZ20V
CUZ20V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 6883 Stücke:
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40+0.52 EUR
68+0.31 EUR
108+0.19 EUR
500+0.14 EUR
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MUZ20V,LF
MUZ20V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
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MUZ20V,LF
MUZ20V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
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33+0.65 EUR
46+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.13 EUR
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MSZ20V,LF
MSZ20V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
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MSZ20V,LF
MSZ20V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5970 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
48+0.44 EUR
100+0.21 EUR
500+0.18 EUR
1000+0.12 EUR
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CEZ20V,L3F docget.jsp?did=155995&prodName=CEZ20V
CEZ20V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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CEZ20V,L3F docget.jsp?did=155995&prodName=CEZ20V
CEZ20V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 30.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 30.5V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 29pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 4889 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
110+0.19 EUR
231+0.09 EUR
500+0.087 EUR
1000+0.083 EUR
2000+0.082 EUR
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CUHZ20V,H3F docget.jsp?did=70664&prodName=CUHZ20V
CUHZ20V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
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CUHZ20V,H3F docget.jsp?did=70664&prodName=CUHZ20V
CUHZ20V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 20VWM 20.6VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 20.6V (Typ)
Voltage - Breakdown (Min): 18.8V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 20V
Current - Peak Pulse (10/1000µs): 36A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 11967 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
45+0.46 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
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RN1104,LXHF(CT docget.jsp?did=18746&prodName=RN1105
RN1104,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
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RN1104,LXHF(CT docget.jsp?did=18746&prodName=RN1105
RN1104,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 4490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
59+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 36 Stücke
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