Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13523) > Seite 171 nach 226
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MG09ACA18TE | Toshiba Semiconductor and Storage |
Description: HDD 18TB 3.5" SATA III 5V-12VVoltage - Supply: 5V, 12V Operating Temperature: 5°C ~ 55°C Type: SATA III Memory Type: Magnetic Disk (HDD) Memory Size: 18TB Size / Dimension: 147.00mm x 101.85mm x 26.10mm Packaging: Bulk Form Factor: 3.5" |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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MG09ACA18TA | Toshiba Semiconductor and Storage |
Description: HDD 18TB 3.5" SATA III 5V-12VForm Factor: 3.5" Voltage - Supply: 5V, 12V Operating Temperature: 5°C ~ 55°C Type: SATA III Memory Type: Magnetic Disk (HDD) Memory Size: 18TB Size / Dimension: 147.00mm x 101.85mm x 26.10mm Packaging: Bulk |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLP525G(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP525G(FUJT,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP525G(TP5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP525G(TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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TCK420G,L3F | Toshiba Semiconductor and Storage |
Description: IC GATE DRVR HIGH-SIDE 6WCSPGPackaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK420G,L3F | Toshiba Semiconductor and Storage |
Description: IC GATE DRVR HIGH-SIDE 6WCSPGPackaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 28V Input Type: Non-Inverting Supplier Device Package: 6-WCSPG (0.8x1.2) Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.4V, 1.2V Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 13470 Stücke: Lieferzeit 10-14 Tag (e) |
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TC7WB67CFK,LF(CT | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST X 2 12OHM US8Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 1µA Channel Capacitance (CS(off), CD(off)): 5pF Switch Time (Ton, Toff) (Max): 4ns, 4.5ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Voltage - Supply, Single (V+): 1.65V ~ 5.5V Supplier Device Package: US8 On-State Resistance (Max): 12Ohm Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TC7WB67CFK,LF(CT | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST X 2 12OHM US8Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 1µA Channel Capacitance (CS(off), CD(off)): 5pF Switch Time (Ton, Toff) (Max): 4ns, 4.5ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Voltage - Supply, Single (V+): 1.65V ~ 5.5V Supplier Device Package: US8 On-State Resistance (Max): 12Ohm Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 3529 Stücke: Lieferzeit 10-14 Tag (e) |
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AB3X2X3SM | Toshiba Semiconductor and Storage |
Description: FERRITE BEAD 2SMD GW 1LNNumber of Lines: 1 Part Status: Active Current Rating (Max): 6A (Typ) Mounting Type: Surface Mount Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Package / Case: 2-SMD, Gull Wing Packaging: Tape & Reel (TR) Height (Max): 0.169" (4.30mm) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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AB3X2X3SM | Toshiba Semiconductor and Storage |
Description: FERRITE BEAD 2SMD GW 1LNNumber of Lines: 1 Part Status: Active Current Rating (Max): 6A (Typ) Height (Max): 0.169" (4.30mm) Mounting Type: Surface Mount Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Package / Case: 2-SMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 13220 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N813R,LXHF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 100V 3.5A 6TSOPFPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM6N813R,LXHF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 100V 3.5A 6TSOPFPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: 6-TSOP-F Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5006 Stücke: Lieferzeit 10-14 Tag (e) |
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MG09SCA18TE | Toshiba Semiconductor and Storage |
Description: HDD 18TB 3.5" SAS 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 18TB Memory Type: Magnetic Disk (HDD) Type: SAS Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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MG09SCA18TA | Toshiba Semiconductor and Storage |
Description: HDD 18TB 3.5" SAS 5V-12VForm Factor: 3.5" Voltage - Supply: 5V, 12V Operating Temperature: 5°C ~ 55°C Type: SAS Memory Type: Magnetic Disk (HDD) Memory Size: 18TB Size / Dimension: 147.00mm x 101.85mm x 26.10mm Packaging: Bulk |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP620-2(GR,F) | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TLP620-4(MEIDEN,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 4 Part Status: Obsolete Output Type: Transistor Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Bulk Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 55V Supplier Device Package: 16-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: AC, DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP620-4(HITACHI,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIPPackaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP620-4(D4BLFNC,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERVoltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: AC, DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Bulk Current - DC Forward (If) (Max): 50 mA Number of Channels: 4 Part Status: Obsolete Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 55V Supplier Device Package: 16-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP620-4(BL-FNC,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 4 Part Status: Obsolete Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 55V Supplier Device Package: 16-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: AC, DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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DF5A6.8JE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESVPower Line Protection: No Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 4 Supplier Device Package: ESV Voltage - Reverse Standoff (Typ): 5V Capacitance @ Frequency: 45pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF5A6.8JE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM ESVPower Line Protection: No Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 4 Supplier Device Package: ESV Voltage - Reverse Standoff (Typ): 5V Capacitance @ Frequency: 45pF @ 1MHz Applications: General Purpose Type: Zener Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
auf Bestellung 7715 Stücke: Lieferzeit 10-14 Tag (e) |
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DF5A6.8CJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE ESVPower Line Protection: No Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 4 Supplier Device Package: ESV Capacitance @ Frequency: 23pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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DF5A6.8CJE,LM | Toshiba Semiconductor and Storage |
Description: TVS DIODE ESVPower Line Protection: No Voltage - Breakdown (Min): 6.4V Unidirectional Channels: 4 Supplier Device Package: ESV Capacitance @ Frequency: 23pF @ 1MHz Applications: General Purpose Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
auf Bestellung 8433 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DM33,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DM33,LF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DM33,RF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DM33,RF(SE | Toshiba Semiconductor and Storage | Description: LDO REG IOUT: 300MA VIN: 6V VOUT |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK424G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSDigiKey Programmable: Not Verified Part Status: Active Logic Voltage - VIL, VIH: 0.4V, 1.2V Gate Type: N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Supplier Device Package: 6-WCSPG (0.8x1.2) Input Type: Non-Inverting Voltage - Supply: 2.7V ~ 28V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK424G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSDigiKey Programmable: Not Verified Part Status: Active Logic Voltage - VIL, VIH: 0.4V, 1.2V Gate Type: N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Supplier Device Package: 6-WCSPG (0.8x1.2) Input Type: Non-Inverting Voltage - Supply: 2.7V ~ 28V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 9995 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK425G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSDigiKey Programmable: Not Verified Part Status: Active Logic Voltage - VIL, VIH: 0.4V, 1.2V Gate Type: N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Supplier Device Package: 6-WCSPG (0.8x1.2) Input Type: Non-Inverting Voltage - Supply: 2.7V ~ 28V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK425G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSDigiKey Programmable: Not Verified Gate Type: N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Supplier Device Package: 6-WCSPG (0.8x1.2) Input Type: Non-Inverting Voltage - Supply: 2.7V ~ 28V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) Part Status: Active Logic Voltage - VIL, VIH: 0.4V, 1.2V |
auf Bestellung 9710 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK422G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSSupplier Device Package: 6-WCSPG (0.8x1.2) Input Type: Non-Inverting Voltage - Supply: 2.7V ~ 28V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Part Status: Active Logic Voltage - VIL, VIH: 0.4V, 1.2V Gate Type: N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK422G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSPart Status: Active Logic Voltage - VIL, VIH: 0.4V, 1.2V Gate Type: N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Supplier Device Package: 6-WCSPG (0.8x1.2) Input Type: Non-Inverting Voltage - Supply: 2.7V ~ 28V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP DigiKey Programmable: Not Verified Packaging: Cut Tape (CT) |
auf Bestellung 8861 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK423G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSDriven Configuration: High-Side Channel Type: Single Supplier Device Package: 6-WCSPG (0.8x1.2) Input Type: Non-Inverting Voltage - Supply: 2.7V ~ 28V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Part Status: Active Logic Voltage - VIL, VIH: 0.4V, 1.2V Gate Type: N-Channel MOSFET Number of Drivers: 1 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK423G,L3F | Toshiba Semiconductor and Storage |
Description: LOAD SWITCH (GATE DRIVER) IC WCSDigiKey Programmable: Not Verified Logic Voltage - VIL, VIH: 0.4V, 1.2V Gate Type: N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Supplier Device Package: 6-WCSPG (0.8x1.2) Input Type: Non-Inverting Voltage - Supply: 2.7V ~ 28V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) Part Status: Active |
auf Bestellung 9953 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK421G,L3F | Toshiba Semiconductor and Storage |
Description: GATE DRIVER IC VIN:2.7-28V OVLO Supplier Device Package: 6-WCSPG (0.8x1.2) Input Type: Non-Inverting Voltage - Supply: 2.7V ~ 28V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Logic Voltage - VIL, VIH: 0.4V, 1.2V Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: High-Side Channel Type: Synchronous |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TCK421G,L3F | Toshiba Semiconductor and Storage |
Description: GATE DRIVER IC VIN:2.7-28V OVLO DigiKey Programmable: Not Verified Logic Voltage - VIL, VIH: 0.4V, 1.2V Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: High-Side Channel Type: Synchronous Supplier Device Package: 6-WCSPG (0.8x1.2) Input Type: Non-Inverting Voltage - Supply: 2.7V ~ 28V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 5193 Stücke: Lieferzeit 10-14 Tag (e) |
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TK17V65W,LQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORInput Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-DFN-EP (8x8) Vgs(th) (Max) @ Id: 3.5V @ 900µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TK17V65W,LQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTORPower Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 4-VSFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-DFN-EP (8x8) Vgs(th) (Max) @ Id: 3.5V @ 900µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TBD62384AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 18SOPInput Type: Inverting Rds On (Typ): 1.5Ohm Output Configuration: Low Side Operating Temperature: -40°C ~ 85°C Switch Type: General Purpose Interface: On/Off Number of Outputs: 8 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 18-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 18-SOP Ratio - Input:Output: 1:1 Current - Output (Max): 400mA Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Voltage - Load: 0V ~ 50V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TBD62384AFWG,EL | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 18SOPInterface: On/Off Number of Outputs: 8 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 18-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 18-SOP Ratio - Input:Output: 1:1 Current - Output (Max): 400mA Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Voltage - Load: 0V ~ 50V Input Type: Inverting Rds On (Typ): 1.5Ohm Output Configuration: Low Side Operating Temperature: -40°C ~ 85°C Switch Type: General Purpose |
auf Bestellung 4197 Stücke: Lieferzeit 10-14 Tag (e) |
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TK7R0E08QM,S1X | Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220AB 80V 7MOHMInput Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 3.5V @ 500µA Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP781F(GB-TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERVoltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TLP781F(D4-Y,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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TLP781F(D4YH-TP7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 75% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TLP781F(D4GRL-F7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP781F(D4-Y-FD,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Current Transfer Ratio (Max): 150% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Voltage - Output (Max): 80V Supplier Device Package: 4-DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP781F(BL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERNumber of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 200% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP781F(GR-TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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TLP781F(GRL-TP7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TLP781F(D4GRT7TC,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERVoltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP781F(D4YH-LF7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLP781F(D4GR-LF7,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Part Status: Obsolete Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Through Hole Output Type: Transistor Package / Case: 4-DIP (0.400", 10.16mm) Packaging: Tube Supplier Device Package: 4-DIP Current Transfer Ratio (Max): 200% @ 5mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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TLP781F(LF7,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 60 mA Number of Channels: 1 Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TW140N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 140MPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TW107N65C,S1F | Toshiba Semiconductor and Storage |
Description: G3 650V SIC-MOSFET TO-247 107MO Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V Power Dissipation (Max): 76W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.2mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V |
auf Bestellung 266 Stücke: Lieferzeit 10-14 Tag (e) |
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| TW015N120C,S1F | Toshiba Semiconductor and Storage |
Description: G3 1200V SIC-MOSFET TO-247 15MO Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 5V @ 11.7mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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| MG08ADA400E | Toshiba Semiconductor and Storage |
Description: HDD 4TB 3.5" SATA III 5V/12VPackaging: Bulk Size / Dimension: 147.00mm x 101.85mm x 26.10mm Memory Size: 4TB Memory Type: Magnetic Disk (HDD) Type: SATA III Operating Temperature: 5°C ~ 55°C Voltage - Supply: 5V, 12V Form Factor: 3.5" Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MG09ACA18TE |
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Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V-12V
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
Description: HDD 18TB 3.5" SATA III 5V-12V
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Form Factor: 3.5"
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1030.39 EUR |
| 20+ | 941.79 EUR |
| MG09ACA18TA |
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Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Description: HDD 18TB 3.5" SATA III 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SATA III
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1069.38 EUR |
| 20+ | 977.42 EUR |
| TLP525G(LF1,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP525G(FUJT,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP525G(TP5,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP525G(TP1,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TCK420G,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPG
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 6WCSPG
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.57 EUR |
| TCK420G,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE DRVR HIGH-SIDE 6WCSPG
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HIGH-SIDE 6WCSPG
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 28V
Input Type: Non-Inverting
Supplier Device Package: 6-WCSPG (0.8x1.2)
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 13470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.53 EUR |
| 14+ | 1.56 EUR |
| 25+ | 1.3 EUR |
| 100+ | 1.01 EUR |
| 250+ | 0.86 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
| 2500+ | 0.62 EUR |
| TC7WB67CFK,LF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST X 2 12OHM US8
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1µA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: US8
On-State Resistance (Max): 12Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC SWITCH SPST X 2 12OHM US8
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1µA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: US8
On-State Resistance (Max): 12Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TC7WB67CFK,LF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST X 2 12OHM US8
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1µA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: US8
On-State Resistance (Max): 12Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Description: IC SWITCH SPST X 2 12OHM US8
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1µA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: US8
On-State Resistance (Max): 12Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3529 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.07 EUR |
| 34+ | 0.63 EUR |
| 41+ | 0.51 EUR |
| 100+ | 0.39 EUR |
| 250+ | 0.32 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.25 EUR |
| AB3X2X3SM |
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Hersteller: Toshiba Semiconductor and Storage
Description: FERRITE BEAD 2SMD GW 1LN
Number of Lines: 1
Part Status: Active
Current Rating (Max): 6A (Typ)
Mounting Type: Surface Mount
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Package / Case: 2-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Height (Max): 0.169" (4.30mm)
Description: FERRITE BEAD 2SMD GW 1LN
Number of Lines: 1
Part Status: Active
Current Rating (Max): 6A (Typ)
Mounting Type: Surface Mount
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Package / Case: 2-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Height (Max): 0.169" (4.30mm)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 1.48 EUR |
| 4000+ | 1.38 EUR |
| 6000+ | 1.33 EUR |
| 10000+ | 1.27 EUR |
| AB3X2X3SM |
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Hersteller: Toshiba Semiconductor and Storage
Description: FERRITE BEAD 2SMD GW 1LN
Number of Lines: 1
Part Status: Active
Current Rating (Max): 6A (Typ)
Height (Max): 0.169" (4.30mm)
Mounting Type: Surface Mount
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Package / Case: 2-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: FERRITE BEAD 2SMD GW 1LN
Number of Lines: 1
Part Status: Active
Current Rating (Max): 6A (Typ)
Height (Max): 0.169" (4.30mm)
Mounting Type: Surface Mount
Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm)
Package / Case: 2-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 13220 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.87 EUR |
| 10+ | 2.36 EUR |
| 25+ | 2.17 EUR |
| 50+ | 2.03 EUR |
| 100+ | 1.92 EUR |
| 250+ | 1.77 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.56 EUR |
| SSM6N813R,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.51 EUR |
| SSM6N813R,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 3.5A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5006 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 17+ | 1.3 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.6 EUR |
| MG09SCA18TE |
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Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Description: HDD 18TB 3.5" SAS 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 18TB
Memory Type: Magnetic Disk (HDD)
Type: SAS
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 981.42 EUR |
| MG09SCA18TA |
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Hersteller: Toshiba Semiconductor and Storage
Description: HDD 18TB 3.5" SAS 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SAS
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
Description: HDD 18TB 3.5" SAS 5V-12V
Form Factor: 3.5"
Voltage - Supply: 5V, 12V
Operating Temperature: 5°C ~ 55°C
Type: SAS
Memory Type: Magnetic Disk (HDD)
Memory Size: 18TB
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Packaging: Bulk
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 989.96 EUR |
| TLP620-2(GR,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP620-4(MEIDEN,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 4
Part Status: Obsolete
Output Type: Transistor
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Bulk
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 16-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 4
Part Status: Obsolete
Output Type: Transistor
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Bulk
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 16-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP620-4(HITACHI,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 5KV 4CH TRANS 16-DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP620-4(D4BLFNC,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 4
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 16-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Description: PHOTOCOUPLER
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 4
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 16-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP620-4(BL-FNC,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 4
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 16-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 4
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 55V
Supplier Device Package: 16-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DF5A6.8JE,LM |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: ESV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5VWM ESV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: ESV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.1 EUR |
| DF5A6.8JE,LM |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: ESV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM ESV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: ESV
Voltage - Reverse Standoff (Typ): 5V
Capacitance @ Frequency: 45pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 7715 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 0.52 EUR |
| 66+ | 0.32 EUR |
| 105+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.12 EUR |
| DF5A6.8CJE,LM |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: ESV
Capacitance @ Frequency: 23pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Description: TVS DIODE ESV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: ESV
Capacitance @ Frequency: 23pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.062 EUR |
| DF5A6.8CJE,LM |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE ESV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: ESV
Capacitance @ Frequency: 23pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: TVS DIODE ESV
Power Line Protection: No
Voltage - Breakdown (Min): 6.4V
Unidirectional Channels: 4
Supplier Device Package: ESV
Capacitance @ Frequency: 23pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
auf Bestellung 8433 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 0.3 EUR |
| 103+ | 0.2 EUR |
| 200+ | 0.1 EUR |
| 500+ | 0.095 EUR |
| 1000+ | 0.086 EUR |
| TCR3DM33,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.19 EUR |
| TCR3DM33,LF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1 EUR |
| 28+ | 0.76 EUR |
| 31+ | 0.69 EUR |
| 100+ | 0.48 EUR |
| 250+ | 0.39 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.25 EUR |
| 2500+ | 0.23 EUR |
| 5000+ | 0.21 EUR |
| TCR3DM33,RF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.18 EUR |
| TCR3DM33,RF(SE |
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
Description: LDO REG IOUT: 300MA VIN: 6V VOUT
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.96 EUR |
| 30+ | 0.73 EUR |
| 33+ | 0.65 EUR |
| 100+ | 0.45 EUR |
| 250+ | 0.38 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.24 EUR |
| 2500+ | 0.21 EUR |
| 5000+ | 0.2 EUR |
| TCK424G,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
DigiKey Programmable: Not Verified
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: LOAD SWITCH (GATE DRIVER) IC WCS
DigiKey Programmable: Not Verified
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.63 EUR |
| TCK424G,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
DigiKey Programmable: Not Verified
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: LOAD SWITCH (GATE DRIVER) IC WCS
DigiKey Programmable: Not Verified
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 9995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 14+ | 1.54 EUR |
| 25+ | 1.44 EUR |
| 100+ | 1.18 EUR |
| 250+ | 1.09 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.75 EUR |
| 2500+ | 0.68 EUR |
| TCK425G,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
DigiKey Programmable: Not Verified
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: LOAD SWITCH (GATE DRIVER) IC WCS
DigiKey Programmable: Not Verified
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.63 EUR |
| TCK425G,L3F |
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Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
DigiKey Programmable: Not Verified
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Description: LOAD SWITCH (GATE DRIVER) IC WCS
DigiKey Programmable: Not Verified
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
auf Bestellung 9710 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 14+ | 1.54 EUR |
| 25+ | 1.44 EUR |
| 100+ | 1.18 EUR |
| 250+ | 1.09 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.75 EUR |
| 2500+ | 0.68 EUR |
| TCK422G,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.63 EUR |
| TCK422G,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
DigiKey Programmable: Not Verified
Packaging: Cut Tape (CT)
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
DigiKey Programmable: Not Verified
Packaging: Cut Tape (CT)
auf Bestellung 8861 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 14+ | 1.54 EUR |
| 25+ | 1.44 EUR |
| 100+ | 1.18 EUR |
| 250+ | 1.09 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.75 EUR |
| 2500+ | 0.68 EUR |
| TCK423G,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Description: LOAD SWITCH (GATE DRIVER) IC WCS
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.63 EUR |
| TCK423G,L3F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: LOAD SWITCH (GATE DRIVER) IC WCS
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Part Status: Active
Description: LOAD SWITCH (GATE DRIVER) IC WCS
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 9953 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 14+ | 1.54 EUR |
| 25+ | 1.44 EUR |
| 100+ | 1.18 EUR |
| 250+ | 1.09 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.75 EUR |
| 2500+ | 0.68 EUR |
| TCK421G,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVER IC VIN:2.7-28V OVLO
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Synchronous
Description: GATE DRIVER IC VIN:2.7-28V OVLO
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Synchronous
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.58 EUR |
| TCK421G,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: GATE DRIVER IC VIN:2.7-28V OVLO
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Synchronous
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: GATE DRIVER IC VIN:2.7-28V OVLO
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.4V, 1.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side
Channel Type: Synchronous
Supplier Device Package: 6-WCSPG (0.8x1.2)
Input Type: Non-Inverting
Voltage - Supply: 2.7V ~ 28V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 5193 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.62 EUR |
| 15+ | 1.42 EUR |
| 25+ | 1.33 EUR |
| 100+ | 1.08 EUR |
| 250+ | 1.01 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.62 EUR |
| TK17V65W,LQ |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: X35 PB-F POWER MOSFET TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TK17V65W,LQ |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Description: X35 PB-F POWER MOSFET TRANSISTOR
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TBD62384AFWG,EL |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Input Type: Inverting
Rds On (Typ): 1.5Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 8
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 18-SOP
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Voltage - Load: 0V ~ 50V
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Input Type: Inverting
Rds On (Typ): 1.5Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 8
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 18-SOP
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Voltage - Load: 0V ~ 50V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.01 EUR |
| 2000+ | 1.93 EUR |
| TBD62384AFWG,EL |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Interface: On/Off
Number of Outputs: 8
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 18-SOP
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Voltage - Load: 0V ~ 50V
Input Type: Inverting
Rds On (Typ): 1.5Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C
Switch Type: General Purpose
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Interface: On/Off
Number of Outputs: 8
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 18-SOP
Ratio - Input:Output: 1:1
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Voltage - Load: 0V ~ 50V
Input Type: Inverting
Rds On (Typ): 1.5Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C
Switch Type: General Purpose
auf Bestellung 4197 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.07 EUR |
| 10+ | 3.96 EUR |
| 100+ | 2.75 EUR |
| 500+ | 2.37 EUR |
| TK7R0E08QM,S1X |
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Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 TO-220AB 80V 7MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: UMOS10 TO-220AB 80V 7MOHM
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 87W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.67 EUR |
| 50+ | 2.14 EUR |
| 100+ | 1.7 EUR |
| TLP781F(GB-TP7,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Description: PHOTOCOUPLER
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(D4-Y,F) |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(D4YH-TP7,F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 75% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(D4GRL-F7,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(D4-Y-FD,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Current Transfer Ratio (Max): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(BL,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(GR-TP7,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(GRL-TP7,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(D4GRT7TC,F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Description: PHOTOCOUPLER
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(D4YH-LF7,F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(D4GR-LF7,F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 5mA
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 4-DIP (0.400", 10.16mm)
Packaging: Tube
Supplier Device Package: 4-DIP
Current Transfer Ratio (Max): 200% @ 5mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLP781F(LF7,F) |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TW140N120C,S1F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 140M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 140M
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TW107N65C,S1F |
Hersteller: Toshiba Semiconductor and Storage
Description: G3 650V SIC-MOSFET TO-247 107MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Description: G3 650V SIC-MOSFET TO-247 107MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 18V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.35 EUR |
| 30+ | 6.41 EUR |
| 120+ | 5.33 EUR |
| TW015N120C,S1F |
Hersteller: Toshiba Semiconductor and Storage
Description: G3 1200V SIC-MOSFET TO-247 15MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
Description: G3 1200V SIC-MOSFET TO-247 15MO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 5V @ 11.7mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 71 EUR |
| 30+ | 47 EUR |
| MG08ADA400E |
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Hersteller: Toshiba Semiconductor and Storage
Description: HDD 4TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Description: HDD 4TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Memory Type: Magnetic Disk (HDD)
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
















