Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13451) > Seite 171 nach 225
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SSM3K361TU,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: UFM Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6773 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1C01FE-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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HN1C01FE-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
auf Bestellung 7988 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP3823(TP1,F | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLP3823(TP1,F | Toshiba Semiconductor and Storage |
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auf Bestellung 975 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4116-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SC4116-Y,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 5610 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4116-BL,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4116-BL,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 5929 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4116-GR,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4116-GR,LXHF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: SC-70 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW |
auf Bestellung 5908 Stücke: Lieferzeit 10-14 Tag (e) |
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TK17E80W,S1X | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 850µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V |
auf Bestellung 94 Stücke: Lieferzeit 10-14 Tag (e) |
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TLP620-2(YASK,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-2(GB-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-SMD Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-4(D4GB-F1,F | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-2(D4-LF2,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-2(D4-TP1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-SMD Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620F-2(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-DIP Voltage - Output (Max): 55V Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-4(YASK-GB,F | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620F-2(D4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-DIP Voltage - Output (Max): 55V Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-2(D4-GB,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-4(D4-LF2,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-4(GB-LF5,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-2(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-SMD Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-4(D4-LF1,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 16-SMD Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 16-SMD Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 4 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP620-2(D4GB-T4,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 8-DIP Voltage - Output (Max): 55V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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TLP383(GB-TPL,E | Toshiba Semiconductor and Storage |
![]() Packaging: Box Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SO, 4 Lead Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
TLP383(E(T X 4 | Toshiba Semiconductor and Storage | Description: OPTOCOUPLER TRANS SO6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP383(BL,E(T X 4 | Toshiba Semiconductor and Storage |
![]() Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358F(D4-LF4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 6 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358(TP5,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 5.5 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358(D4,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 6A Technology: Optical Coupling Current - Output High, Low: 5A, 5A Voltage - Isolation: 3750Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 250ns Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358F(D4-TP4,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 6A Technology: Optical Coupling Current - Output High, Low: 5A, 5A Voltage - Isolation: 3750Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 250ns Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358F(TP4,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 6 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358(D4-LF5,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 5.5 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358(D4-LF1,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 5.5 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358(D4-TP1,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-SMD, Gull Wing Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 5.5 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358F(F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 6A Technology: Optical Coupling Current - Output High, Low: 5A, 5A Voltage - Isolation: 3750Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 250ns Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358(D4-TP5,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 6A Technology: Optical Coupling Current - Output High, Low: 5A, 5A Voltage - Isolation: 3750Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 250ns Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358F(D4,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Push-Pull, Totem Pole Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.57V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Part Status: Last Time Buy Number of Channels: 1 Current - Output / Channel: 6 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
TLP358(LF5,F) | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.57V Current - Peak Output: 6A Technology: Optical Coupling Current - Output High, Low: 5A, 5A Voltage - Isolation: 3750Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 17ns, 17ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 250ns Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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TLP3481(TP,E | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD (0.083", 2.10mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 3 A Supplier Device Package: P-SON4 Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 100 mOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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TLP3481(TP,E | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD (0.083", 2.10mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 3 A Supplier Device Package: P-SON4 Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 100 mOhms |
auf Bestellung 1410 Stücke: Lieferzeit 10-14 Tag (e) |
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TK22A65X,S5X | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
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TK22A65X5,S5X | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
auf Bestellung 1050 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K09FU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 100µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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SSM3K09FU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 100µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V |
auf Bestellung 33255 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1931(NOMARK,A,Q | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 60MHz Supplier Device Package: TO-220NIS Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SA1931,NETQ(M | Toshiba Semiconductor and Storage |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SA1931,NIKKIQ(J | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 60MHz Supplier Device Package: TO-220NIS Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SA1931,BOSCHQ(J | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 60MHz Supplier Device Package: TO-220NIS Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SA1931,KEHINQ(M | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 60MHz Supplier Device Package: TO-220NIS Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SA1931,SINFQ(J | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 60MHz Supplier Device Package: TO-220NIS Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SA1931,NETQ(J | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 60MHz Supplier Device Package: TO-220NIS Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SA1931,Q(J | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 60MHz Supplier Device Package: TO-220NIS Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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2SA1931,NSEIKIQ(J | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 60MHz Supplier Device Package: TO-220NIS Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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DF3D6.8MS,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: General Purpose Capacitance @ Frequency: 0.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SSM Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11V (Typ) Power Line Protection: Yes |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1107,LXHF(CT | Toshiba Semiconductor and Storage |
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auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RN1107,LXHF(CT | Toshiba Semiconductor and Storage |
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auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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TB9120AFTG(EL) | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 28-VQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 2.5A Interface: Parallel, PWM Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 4.5V ~ 7V, 7V ~ 18V Technology: NMOS, PMOS Supplier Device Package: 28-VQFN (6x6) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Step Resolution: 1, 1/2, 1/8, 1/16, 1/32 Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
SSM3K361TU,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET NCH 100V 3.5A SOT323
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: AECQ MOSFET NCH 100V 3.5A SOT323
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6773 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.57 EUR |
18+ | 0.98 EUR |
100+ | 0.64 EUR |
500+ | 0.49 EUR |
1000+ | 0.44 EUR |
HN1C01FE-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS 2NPN DUAL 50V 150MA ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 0.11 EUR |
HN1C01FE-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TRANS 2NPN DUAL 50V 150MA ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 7988 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
33+ | 0.55 EUR |
53+ | 0.34 EUR |
100+ | 0.21 EUR |
500+ | 0.16 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
TLP3823(TP1,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Description: SSR RELAY SPST-NO 3A 0-100V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP3823(TP1,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Description: SSR RELAY SPST-NO 3A 0-100V
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.69 EUR |
10+ | 9.93 EUR |
100+ | 8.21 EUR |
500+ | 7.19 EUR |
2SC4116-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SC4116-Y,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 5610 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 0.49 EUR |
59+ | 0.30 EUR |
100+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.12 EUR |
2SC4116-BL,LXHF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.10 EUR |
2SC4116-BL,LXHF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 5929 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 0.49 EUR |
59+ | 0.30 EUR |
100+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.12 EUR |
2SC4116-GR,LXHF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.10 EUR |
2SC4116-GR,LXHF |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Description: TRANS NPN 50V 0.15A SC-70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 5908 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 0.49 EUR |
59+ | 0.30 EUR |
100+ | 0.19 EUR |
500+ | 0.14 EUR |
1000+ | 0.12 EUR |
TK17E80W,S1X |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 800V 17A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
Description: MOSFET N-CHANNEL 800V 17A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 300 V
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 10.14 EUR |
50+ | 5.39 EUR |
TLP620-2(YASK,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-2(GB-TP1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-4(D4GB-F1,F |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-2(D4-LF2,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-2(D4-TP1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620F-2(F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-4(YASK-GB,F |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620F-2(D4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-2(D4-GB,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-4(D4-LF2,F) |
![]() |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-4(GB-LF5,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-2(LF1,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-4(D4-LF1,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-SMD
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 16-SMD
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 16-SMD
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP620-2(D4GB-T4,F |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 55V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP383(GB-TPL,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH
Packaging: Box
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: MOSFET N-CH
Packaging: Box
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP383(E(T X 4 |
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS SO6
Description: OPTOCOUPLER TRANS SO6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358F(D4-LF4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358(TP5,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358(D4,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358F(D4-TP4,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358F(TP4,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358(D4-LF5,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358(D4-LF1,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358(D4-TP1,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 5.5 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358F(F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358(D4-TP5,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358F(D4,F) |
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Push-Pull, Totem Pole
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Part Status: Last Time Buy
Number of Channels: 1
Current - Output / Channel: 6 A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP358(LF5,F) |
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Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.57V
Current - Peak Output: 6A
Technology: Optical Coupling
Current - Output High, Low: 5A, 5A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 17ns, 17ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 250ns
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP3481(TP,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-60V T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 3 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Description: SSR RELAY SPST-NO 3A 0-60V T&R
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 3 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLP3481(TP,E |
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Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-60V T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 3 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
Description: SSR RELAY SPST-NO 3A 0-60V T&R
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.083", 2.10mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 3 A
Supplier Device Package: P-SON4
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 100 mOhms
auf Bestellung 1410 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.38 EUR |
10+ | 6.24 EUR |
100+ | 4.98 EUR |
500+ | 4.45 EUR |
TK22A65X,S5X |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.78 EUR |
50+ | 4.03 EUR |
100+ | 3.66 EUR |
TK22A65X5,S5X |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.20 EUR |
50+ | 4.26 EUR |
100+ | 3.88 EUR |
500+ | 3.22 EUR |
1000+ | 3.10 EUR |
SSM3K09FU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 400MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Description: MOSFET N-CH 30V 400MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.13 EUR |
6000+ | 0.11 EUR |
15000+ | 0.10 EUR |
SSM3K09FU,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 400MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
Description: MOSFET N-CH 30V 400MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 200MA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 5 V
auf Bestellung 33255 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 0.70 EUR |
41+ | 0.43 EUR |
100+ | 0.27 EUR |
500+ | 0.20 EUR |
1000+ | 0.18 EUR |
2SA1931(NOMARK,A,Q |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 5A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1931,NETQ(M |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO220NIS
Description: TRANS PNP 50V 5A TO220NIS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1931,NIKKIQ(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 5A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1931,BOSCHQ(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 5A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1931,KEHINQ(M |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 5A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1931,SINFQ(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 5A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1931,NETQ(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 5A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1931,Q(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 5A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SA1931,NSEIKIQ(J |
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Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 5A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Description: TRANS PNP 50V 5A TO220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 60MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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DF3D6.8MS,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 11VC SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SSM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: Yes
Description: TVS DIODE 5VWM 11VC SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SSM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: Yes
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |
6000+ | 0.04 EUR |
RN1107,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=10K,
Description: AUTO AEC-Q SINGLE NPN Q1BSR=10K,
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.10 EUR |
RN1107,LXHF(CT |
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Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE NPN Q1BSR=10K,
Description: AUTO AEC-Q SINGLE NPN Q1BSR=10K,
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 0.60 EUR |
40+ | 0.45 EUR |
100+ | 0.25 EUR |
500+ | 0.17 EUR |
1000+ | 0.13 EUR |
TB9120AFTG(EL) |
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Hersteller: Toshiba Semiconductor and Storage
Description: AEC-Q100 BIPOLAR STEPPER MOTOR D
Packaging: Tape & Reel (TR)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 7V, 7V ~ 18V
Technology: NMOS, PMOS
Supplier Device Package: 28-VQFN (6x6)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/8, 1/16, 1/32
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: AEC-Q100 BIPOLAR STEPPER MOTOR D
Packaging: Tape & Reel (TR)
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2.5A
Interface: Parallel, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.5V ~ 7V, 7V ~ 18V
Technology: NMOS, PMOS
Supplier Device Package: 28-VQFN (6x6)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/8, 1/16, 1/32
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH