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1SS315[U/D] 1SS315[U/D] Toshiba Semiconductor and Storage Description: RF DIODE SCHOTTKY 5V USC
Current - Max: 30 mA
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 5V
Capacitance @ Vr, F: 0.06pF @ 200mV, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN1A01FE-GR,LXHF HN1A01FE-GR,LXHF Toshiba Semiconductor and Storage HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
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HN1A01FE-GR,LXHF HN1A01FE-GR,LXHF Toshiba Semiconductor and Storage HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
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500+0.48 EUR
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TPH2R408QM,L1Q TPH2R408QM,L1Q Toshiba Semiconductor and Storage TPH2R408QM_datasheet_en_20211224.pdf?did=67915&prodName=TPH2R408QM Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
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TPH2R408QM,L1Q TPH2R408QM,L1Q Toshiba Semiconductor and Storage TPH2R408QM_datasheet_en_20211224.pdf?did=67915&prodName=TPH2R408QM Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
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TPH3R704PC,LQ TPH3R704PC,LQ Toshiba Semiconductor and Storage TPH3R704PC_datasheet_en_20161019.pdf?did=55431&prodName=TPH3R704PC Description: MOSFET N-CH 40V 82A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPH3R704PC,LQ TPH3R704PC,LQ Toshiba Semiconductor and Storage TPH3R704PC_datasheet_en_20161019.pdf?did=55431&prodName=TPH3R704PC Description: MOSFET N-CH 40V 82A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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RN1911FE,LF(CT RN1911FE,LF(CT Toshiba Semiconductor and Storage RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Part Status: Active
Supplier Device Package: ES6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar
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RN1911FE,LF(CT RN1911FE,LF(CT Toshiba Semiconductor and Storage RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Part Status: Active
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Supplier Device Package: ES6
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TCR3UG50B,LF TCR3UG50B,LF Toshiba Semiconductor and Storage TCR3UG50B_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG50B Description: IC REG LINEAR 5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.195V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
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TCR3UG50B,LF TCR3UG50B,LF Toshiba Semiconductor and Storage TCR3UG50B_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG50B Description: IC REG LINEAR 5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.195V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
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RN2102MFV,L3F(CT RN2102MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2102MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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RN2102MFV,L3F(CT RN2102MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2102MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
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RN2132MFV,L3F RN2132MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=1075&prodName=RN2132MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
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RN2132MFV,L3F RN2132MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=1075&prodName=RN2132MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
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7UL1T00FU,LF 7UL1T00FU,LF Toshiba Semiconductor and Storage docget.jsp?did=70731&prodName=7UL1T00FU Description: IC NAND 1-CIR 2-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
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7UL1T00FU,LF 7UL1T00FU,LF Toshiba Semiconductor and Storage docget.jsp?did=70731&prodName=7UL1T00FU Description: IC NAND 1-CIR 2-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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TLP598GAF TLP598GAF Toshiba Semiconductor and Storage TLP598GA_datasheet_en_20190624.pdf?did=605&prodName=TLP598GA Description: SSR RELAY SPST-NO 150MA 0-400V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Packaging: Tube
On-State Resistance (Max): 12 Ohms
Voltage - Load: 0 V ~ 400 V
Supplier Device Package: 6-DIP
Load Current: 150 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.33VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-DIP (0.300", 7.62mm)
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TLP223GA(D4TP1,F TLP223GA(D4TP1,F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 120MA 0-400V
On-State Resistance (Max): 35 Ohms
Voltage - Load: 0 V ~ 400 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
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TLP223GA(D4TP1,F TLP223GA(D4TP1,F Toshiba Semiconductor and Storage Description: SSR RELAY SPST-NO 120MA 0-400V
On-State Resistance (Max): 35 Ohms
Voltage - Load: 0 V ~ 400 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
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TLP223J(D4TP1,F TLP223J(D4TP1,F Toshiba Semiconductor and Storage docget.jsp?did=139843&prodName=TLP223J Description: SSR RELAY SPST-NO 90MA 0-600V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 60 Ohms
Voltage - Load: 0 V ~ 600 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 90 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
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TLP223J(D4TP1,F TLP223J(D4TP1,F Toshiba Semiconductor and Storage docget.jsp?did=139843&prodName=TLP223J Description: SSR RELAY SPST-NO 90MA 0-600V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 60 Ohms
Voltage - Load: 0 V ~ 600 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 90 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
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MSZ24V,LF MSZ24V,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ24V Description: TVS DIODE 24VWM 36.5VC SMINI
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
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MSZ24V,LF MSZ24V,LF Toshiba Semiconductor and Storage docget.jsp?did=69349&prodName=MSZ24V Description: TVS DIODE 24VWM 36.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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CUZ24V,H3F CUZ24V,H3F Toshiba Semiconductor and Storage docget.jsp?did=155999&prodName=CUZ24V Description: TVS DIODE 24VWM 36.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
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CUZ24V,H3F CUZ24V,H3F Toshiba Semiconductor and Storage docget.jsp?did=155999&prodName=CUZ24V Description: TVS DIODE 24VWM 36.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
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CEZ24V,L3F CEZ24V,L3F Toshiba Semiconductor and Storage docget.jsp?did=69323&prodName=CEZ24V Description: TVS DIODE 24VWM 36.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
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CEZ24V,L3F CEZ24V,L3F Toshiba Semiconductor and Storage docget.jsp?did=69323&prodName=CEZ24V Description: TVS DIODE 24VWM 36.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
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MUZ24V,LF MUZ24V,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ24V Description: TVS DIODE 24VWM 36.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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MUZ24V,LF MUZ24V,LF Toshiba Semiconductor and Storage docget.jsp?did=69487&prodName=MUZ24V Description: TVS DIODE 24VWM 36.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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CUHZ24V,H3F CUHZ24V,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ24V Description: TVS DIODE 24VWM 25.5VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
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CUHZ24V,H3F CUHZ24V,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ24V Description: TVS DIODE 24VWM 25.5VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
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TPCA8109(TE12L1,V TPCA8109(TE12L1,V Toshiba Semiconductor and Storage Description: MOSFET P-CH 30V 24A 8SOP
Produkt ist nicht verfügbar
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TLP293(GB,E TLP293(GB,E Toshiba Semiconductor and Storage TLP293_datasheet_en_20191129.pdf?did=14419&prodName=TLP293 Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TCR2LN30,LSF(SE TCR2LN30,LSF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN30,LSF(SE TCR2LN30,LSF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
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TCR2EN30,LF(SE TCR2EN30,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
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TCR2EN30,LF(SE TCR2EN30,LF(SE Toshiba Semiconductor and Storage TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
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TCR2LN30,LF(SE TCR2LN30,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN30,LF(SE TCR2LN30,LF(SE Toshiba Semiconductor and Storage TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08 Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
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SSM3K376R,LXHF SSM3K376R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=60463&prodName=SSM3K376R Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SSM3K376R,LXHF SSM3K376R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=60463&prodName=SSM3K376R Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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TB62216FTG,C8,EL TB62216FTG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=13004&prodName=TB62216FTG Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 48-QFN (7x7)
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TB62216FTG,C8,EL TB62216FTG,C8,EL Toshiba Semiconductor and Storage docget.jsp?did=13004&prodName=TB62216FTG Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 48-QFN (7x7)
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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TB67S128FTG(O,EL) TB67S128FTG(O,EL) Toshiba Semiconductor and Storage TB67S128FTG_datasheet_en_20210907.pdf?did=61073&prodName=TB67S128FTG Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Voltage - Supply: 0V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Step Resolution: 1/8, 1/16, 1/32
Motor Type - Stepper: Bipolar
Supplier Device Package: 64-VQFN (9x9)
Voltage - Load: 6.5V ~ 44V
Technology: Power MOSFET
Applications: General Purpose
Produkt ist nicht verfügbar
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TB67S128FTG(O,EL) TB67S128FTG(O,EL) Toshiba Semiconductor and Storage TB67S128FTG_datasheet_en_20210907.pdf?did=61073&prodName=TB67S128FTG Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Step Resolution: 1/8, 1/16, 1/32
Motor Type - Stepper: Bipolar
Supplier Device Package: 64-VQFN (9x9)
Voltage - Load: 6.5V ~ 44V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 0V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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TPCA8128,L1Q TPCA8128,L1Q Toshiba Semiconductor and Storage Description: MOSFET P-CH 30V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DF2B6M4BSL,L3F DF2B6M4BSL,L3F Toshiba Semiconductor and Storage docget.jsp?did=140645&prodName=DF2B6M4BSL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B6M4BSL,L3F DF2B6M4BSL,L3F Toshiba Semiconductor and Storage docget.jsp?did=140645&prodName=DF2B6M4BSL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 9233 Stücke:
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TC7SZ05FU,LJ(CT TC7SZ05FU,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=54754&prodName=TC7SZ05FU Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 1184 Stücke:
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TCR3DM135,LF(SE TCR3DM135,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
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TCR3DM135,LF(SE TCR3DM135,LF(SE Toshiba Semiconductor and Storage TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10 Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 19975 Stücke:
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89+0.24 EUR
104+0.2 EUR
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TK16J60W5,S1VQ TK16J60W5,S1VQ Toshiba Semiconductor and Storage docget.jsp?did=14278&prodName=TK16J60W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 25 Stücke:
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TK16J60W,S1VE TK16J60W,S1VE Toshiba Semiconductor and Storage docget.jsp?did=13522&prodName=TK16J60W Description: X35 PB-F POWER MOSFET TRANSISTOR
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TB9101FNG,EL TB9101FNG,EL Toshiba Semiconductor and Storage docget.jsp?did=15508&prodName=TB9101FNG Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TB9101FNG,EL TB9101FNG,EL Toshiba Semiconductor and Storage docget.jsp?did=15508&prodName=TB9101FNG Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
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TCR5AM33,LF TCR5AM33,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 3.3V 500MA 5DFNB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TCR5AM33,LF TCR5AM33,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 3.3V 500MA 5DFNB
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29+0.74 EUR
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TCR5AM105A,LF TCR5AM105A,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1.05V 500MA 5DFNB
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TCR5AM105A,LF TCR5AM105A,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1.05V 500MA 5DFNB
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1SS315[U/D]
1SS315[U/D]
Hersteller: Toshiba Semiconductor and Storage
Description: RF DIODE SCHOTTKY 5V USC
Current - Max: 30 mA
Supplier Device Package: USC
Voltage - Peak Reverse (Max): 5V
Capacitance @ Vr, F: 0.06pF @ 200mV, 1MHz
Operating Temperature: 125°C (TJ)
Diode Type: Schottky - Single
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HN1A01FE-GR,LXHF HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE
HN1A01FE-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
auf Bestellung 4000 Stücke:
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4000+0.33 EUR
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HN1A01FE-GR,LXHF HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE
HN1A01FE-GR,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP + PNP TR VCEO:-50
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
auf Bestellung 7702 Stücke:
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23+0.94 EUR
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100+0.61 EUR
500+0.48 EUR
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TPH2R408QM,L1Q TPH2R408QM_datasheet_en_20211224.pdf?did=67915&prodName=TPH2R408QM
TPH2R408QM,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
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5000+1.38 EUR
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TPH2R408QM,L1Q TPH2R408QM_datasheet_en_20211224.pdf?did=67915&prodName=TPH2R408QM
TPH2R408QM,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
auf Bestellung 8864 Stücke:
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5+4.96 EUR
10+3.21 EUR
100+2.2 EUR
500+1.76 EUR
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TPH3R704PC,LQ TPH3R704PC_datasheet_en_20161019.pdf?did=55431&prodName=TPH3R704PC
TPH3R704PC,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 82A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPH3R704PC,LQ TPH3R704PC_datasheet_en_20161019.pdf?did=55431&prodName=TPH3R704PC
TPH3R704PC,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 82A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3615 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Power Dissipation (Max): 830mW (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 1435 Stücke:
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7+3.42 EUR
10+2.17 EUR
100+1.45 EUR
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RN1911FE,LF(CT RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE
RN1911FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Part Status: Active
Supplier Device Package: ES6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar
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RN1911FE,LF(CT RN1911FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1911FE
RN1911FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=10KOHM Q1BER=I
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Part Status: Active
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Supplier Device Package: ES6
auf Bestellung 3980 Stücke:
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46+0.46 EUR
67+0.31 EUR
138+0.15 EUR
500+0.13 EUR
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2000+0.076 EUR
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TCR3UG50B,LF TCR3UG50B_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG50B
TCR3UG50B,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.195V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
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5000+0.19 EUR
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TCR3UG50B,LF TCR3UG50B_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG50B
TCR3UG50B,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.195V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 8689 Stücke:
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24+0.9 EUR
29+0.74 EUR
32+0.67 EUR
100+0.5 EUR
250+0.45 EUR
500+0.37 EUR
1000+0.29 EUR
2500+0.26 EUR
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RN2102MFV,L3F(CT docget.jsp?did=5883&prodName=RN2102MFV
RN2102MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
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8000+0.057 EUR
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RN2102MFV,L3F(CT docget.jsp?did=5883&prodName=RN2102MFV
RN2102MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 15720 Stücke:
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63+0.33 EUR
85+0.25 EUR
158+0.13 EUR
500+0.1 EUR
1000+0.073 EUR
2000+0.06 EUR
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RN2132MFV,L3F docget.jsp?did=1075&prodName=RN2132MFV
RN2132MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
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RN2132MFV,L3F docget.jsp?did=1075&prodName=RN2132MFV
RN2132MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
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7UL1T00FU,LF docget.jsp?did=70731&prodName=7UL1T00FU
7UL1T00FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC NAND 1-CIR 2-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.11 EUR
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7UL1T00FU,LF docget.jsp?did=70731&prodName=7UL1T00FU
7UL1T00FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC NAND 1-CIR 2-IN USV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
Input Logic Level - Low: 2V ~ 2.48V
Input Logic Level - High: 0.1V ~ 0.4V
Supplier Device Package: USV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C
Logic Type: NAND Gate
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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72+0.3 EUR
109+0.19 EUR
124+0.17 EUR
146+0.14 EUR
250+0.13 EUR
500+0.12 EUR
1000+0.12 EUR
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TLP598GAF TLP598GA_datasheet_en_20190624.pdf?did=605&prodName=TLP598GA
TLP598GAF
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 150MA 0-400V
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
Packaging: Tube
On-State Resistance (Max): 12 Ohms
Voltage - Load: 0 V ~ 400 V
Supplier Device Package: 6-DIP
Load Current: 150 mA
Termination Style: PC Pin
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.33VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 6-DIP (0.300", 7.62mm)
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TLP223GA(D4TP1,F
TLP223GA(D4TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
On-State Resistance (Max): 35 Ohms
Voltage - Load: 0 V ~ 400 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP223GA(D4TP1,F
TLP223GA(D4TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-400V
On-State Resistance (Max): 35 Ohms
Voltage - Load: 0 V ~ 400 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 120 mA
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
auf Bestellung 1027 Stücke:
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7+3.47 EUR
10+3.26 EUR
25+2.9 EUR
50+2.76 EUR
100+2.62 EUR
250+2.32 EUR
500+2.18 EUR
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TLP223J(D4TP1,F docget.jsp?did=139843&prodName=TLP223J
TLP223J(D4TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 90MA 0-600V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 60 Ohms
Voltage - Load: 0 V ~ 600 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 90 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP223J(D4TP1,F docget.jsp?did=139843&prodName=TLP223J
TLP223J(D4TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 90MA 0-600V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 110°C
On-State Resistance (Max): 60 Ohms
Voltage - Load: 0 V ~ 600 V
Part Status: Active
Supplier Device Package: 4-SMD
Load Current: 90 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 4-SMD (0.300", 7.62mm)
Packaging: Cut Tape (CT)
auf Bestellung 820 Stücke:
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7+3.31 EUR
10+2.95 EUR
25+2.82 EUR
50+2.71 EUR
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250+2.51 EUR
500+2.42 EUR
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MSZ24V,LF docget.jsp?did=69349&prodName=MSZ24V
MSZ24V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC SMINI
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
auf Bestellung 3000 Stücke:
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3000+0.12 EUR
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MSZ24V,LF docget.jsp?did=69349&prodName=MSZ24V
MSZ24V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC SMINI
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: S-Mini
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5935 Stücke:
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31+0.69 EUR
44+0.48 EUR
100+0.24 EUR
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CUZ24V,H3F docget.jsp?did=155999&prodName=CUZ24V
CUZ24V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
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3000+0.077 EUR
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CUZ24V,H3F docget.jsp?did=155999&prodName=CUZ24V
CUZ24V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 8756 Stücke:
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112+0.19 EUR
141+0.14 EUR
224+0.094 EUR
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CEZ24V,L3F docget.jsp?did=69323&prodName=CEZ24V
CEZ24V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
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8000+0.1 EUR
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CEZ24V,L3F docget.jsp?did=69323&prodName=CEZ24V
CEZ24V,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC ESC
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: ESC
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
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33+0.65 EUR
48+0.44 EUR
100+0.21 EUR
500+0.18 EUR
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2000+0.11 EUR
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MUZ24V,LF docget.jsp?did=69487&prodName=MUZ24V
MUZ24V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.12 EUR
6000+0.11 EUR
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MUZ24V,LF docget.jsp?did=69487&prodName=MUZ24V
MUZ24V,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 36.5VC USM
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 36.5V (Typ)
Voltage - Breakdown (Min): 22.8V
Unidirectional Channels: 1
Supplier Device Package: USM
Voltage - Reverse Standoff (Typ): 24V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 26pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 6002 Stücke:
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30+0.71 EUR
43+0.5 EUR
100+0.24 EUR
500+0.2 EUR
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CUHZ24V,H3F docget.jsp?did=70664&prodName=CUHZ24V
CUHZ24V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 25.5VC US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 9000 Stücke:
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3000+0.21 EUR
6000+0.19 EUR
9000+0.18 EUR
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CUHZ24V,H3F docget.jsp?did=70664&prodName=CUHZ24V
CUHZ24V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 25.5VC US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 150pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: US2H
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 25.5V (Typ)
Power - Peak Pulse: 2100W (2.1kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 10147 Stücke:
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22+0.96 EUR
36+0.58 EUR
100+0.37 EUR
500+0.27 EUR
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TPCA8109(TE12L1,V
TPCA8109(TE12L1,V
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 24A 8SOP
Produkt ist nicht verfügbar
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TLP293(GB,E TLP293_datasheet_en_20191129.pdf?did=14419&prodName=TLP293
TLP293(GB,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-MFSOP
Packaging: Bulk
Package / Case: 6-SMD (4 Leads), Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-MFSOP, 4 Lead
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4209 Stücke:
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20+1.09 EUR
28+0.76 EUR
175+0.51 EUR
525+0.45 EUR
1050+0.42 EUR
2100+0.39 EUR
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TCR2LN30,LSF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN30,LSF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN30,LSF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN30,LSF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
auf Bestellung 9500 Stücke:
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63+0.33 EUR
93+0.23 EUR
106+0.2 EUR
125+0.17 EUR
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500+0.14 EUR
2500+0.13 EUR
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TCR2EN30,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
TCR2EN30,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
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10000+0.13 EUR
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TCR2EN30,LF(SE TCR2EN105_datasheet_en_20210831.pdf?did=13455&prodName=TCR2EN105
TCR2EN30,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.18V @ 150mA
Protection Features: Over Current
auf Bestellung 17866 Stücke:
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59+0.36 EUR
87+0.24 EUR
99+0.21 EUR
116+0.18 EUR
250+0.17 EUR
500+0.15 EUR
2500+0.14 EUR
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TCR2LN30,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN30,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2LN30,LF(SE TCR2LN08_datasheet_en_20210831.pdf?did=139781&prodName=TCR2LN08
TCR2LN30,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA 4-SDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-SDFN (0.8x0.8)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 150mA
Protection Features: Over Current
auf Bestellung 16278 Stücke:
Lieferzeit 10-14 Tag (e)
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59+0.36 EUR
87+0.24 EUR
99+0.21 EUR
116+0.18 EUR
250+0.17 EUR
500+0.15 EUR
2500+0.14 EUR
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SSM3K376R,LXHF docget.jsp?did=60463&prodName=SSM3K376R
SSM3K376R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 9000 Stücke:
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AnzahlPrivatkunde
3000+0.23 EUR
6000+0.21 EUR
9000+0.2 EUR
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SSM3K376R,LXHF docget.jsp?did=60463&prodName=SSM3K376R
SSM3K376R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: SMOS LOW RON NCH ID: 4A VDSS: 30
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 10815 Stücke:
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21+1.02 EUR
34+0.63 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
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TB62216FTG,C8,EL docget.jsp?did=13004&prodName=TB62216FTG
TB62216FTG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 48-QFN (7x7)
auf Bestellung 2000 Stücke:
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2000+2.36 EUR
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TB62216FTG,C8,EL docget.jsp?did=13004&prodName=TB62216FTG
TB62216FTG,C8,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 48QFN
Part Status: Active
Motor Type - AC, DC: Brushed DC
Supplier Device Package: 48-QFN (7x7)
Voltage - Load: 10V ~ 38V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3859 Stücke:
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5+5.01 EUR
10+4.5 EUR
25+4.24 EUR
100+3.62 EUR
250+3.39 EUR
500+2.96 EUR
1000+2.46 EUR
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TB67S128FTG(O,EL) TB67S128FTG_datasheet_en_20210907.pdf?did=61073&prodName=TB67S128FTG
TB67S128FTG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Voltage - Supply: 0V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Step Resolution: 1/8, 1/16, 1/32
Motor Type - Stepper: Bipolar
Supplier Device Package: 64-VQFN (9x9)
Voltage - Load: 6.5V ~ 44V
Technology: Power MOSFET
Applications: General Purpose
Produkt ist nicht verfügbar
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TB67S128FTG(O,EL) TB67S128FTG_datasheet_en_20210907.pdf?did=61073&prodName=TB67S128FTG
TB67S128FTG(O,EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLAR 0-5.5V 64QFN
Step Resolution: 1/8, 1/16, 1/32
Motor Type - Stepper: Bipolar
Supplier Device Package: 64-VQFN (9x9)
Voltage - Load: 6.5V ~ 44V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 0V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 7224 Stücke:
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2+13.53 EUR
10+10.45 EUR
25+9.69 EUR
100+8.84 EUR
250+8.44 EUR
500+8.19 EUR
1000+8 EUR
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TPCA8128,L1Q
TPCA8128,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 34A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DF2B6M4BSL,L3F docget.jsp?did=140645&prodName=DF2B6M4BSL
DF2B6M4BSL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B6M4BSL,L3F docget.jsp?did=140645&prodName=DF2B6M4BSL
DF2B6M4BSL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 9233 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
51+0.42 EUR
70+0.3 EUR
100+0.26 EUR
500+0.19 EUR
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TC7SZ05FU,LJ(CT docget.jsp?did=54754&prodName=TC7SZ05FU
TC7SZ05FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Cut Tape (CT)
Features: Open Drain
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 1184 Stücke:
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AnzahlPrivatkunde
100+0.21 EUR
154+0.13 EUR
177+0.12 EUR
209+0.1 EUR
250+0.092 EUR
500+0.086 EUR
1000+0.081 EUR
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TCR3DM135,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM135,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
10000+0.15 EUR
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TCR3DM135,LF(SE TCR3DM10_datasheet_en_20210927.pdf?did=140551&prodName=TCR3DM10
TCR3DM135,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4-DFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-DFN (1x1)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature
auf Bestellung 19975 Stücke:
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AnzahlPrivatkunde
53+0.39 EUR
79+0.27 EUR
89+0.24 EUR
104+0.2 EUR
250+0.19 EUR
500+0.18 EUR
1000+0.17 EUR
2500+0.15 EUR
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TK16J60W5,S1VQ docget.jsp?did=14278&prodName=TK16J60W5
TK16J60W5,S1VQ
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P(N)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 25 Stücke:
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2+11.79 EUR
25+6.87 EUR
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TK16J60W,S1VE docget.jsp?did=13522&prodName=TK16J60W
TK16J60W,S1VE
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
auf Bestellung 9 Stücke:
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2+11.04 EUR
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TB9101FNG,EL docget.jsp?did=15508&prodName=TB9101FNG
TB9101FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Produkt ist nicht verfügbar
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TB9101FNG,EL docget.jsp?did=15508&prodName=TB9101FNG
TB9101FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2 CHANNEL H-BRIDGE DRIVER FOR DC
Produkt ist nicht verfügbar
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TCR5AM33,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM33,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 500MA 5DFNB
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TCR5AM33,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM33,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 500MA 5DFNB
auf Bestellung 629 Stücke:
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22+0.99 EUR
27+0.81 EUR
29+0.74 EUR
100+0.55 EUR
250+0.5 EUR
500+0.42 EUR
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TCR5AM105A,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM105A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM105A,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM105A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 500MA 5DFNB
Produkt ist nicht verfügbar
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