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SSM6K819R,LXHF SSM6K819R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=65097&prodName=SSM6K819R Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 3028 Stücke:
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8+2.93 EUR
12+1.86 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.89 EUR
Mindestbestellmenge: 8 Stücke
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TPH9R00CQH,LQ TPH9R00CQH,LQ Toshiba Semiconductor and Storage docget.jsp?did=70667&prodName=TPH9R00CQH Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
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5000+1.45 EUR
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TPH9R00CQH,LQ TPH9R00CQH,LQ Toshiba Semiconductor and Storage docget.jsp?did=70667&prodName=TPH9R00CQH Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
auf Bestellung 9325 Stücke:
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5+4.93 EUR
10+3.18 EUR
100+2.19 EUR
500+1.77 EUR
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RN2116,LXHF(CT RN2116,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18859&prodName=RN2116 Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
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RN2116,LXHF(CT RN2116,LXHF(CT Toshiba Semiconductor and Storage docget.jsp?did=18859&prodName=RN2116 Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
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RN2116,LF(CT RN2116,LF(CT Toshiba Semiconductor and Storage RN2114-18.pdf Description: TRANS PREBIAS PNP 50V 0.1A SSM
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RN2116,LF(CT RN2116,LF(CT Toshiba Semiconductor and Storage RN2114-18.pdf Description: TRANS PREBIAS PNP 50V 0.1A SSM
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RN1108,LF(CT RN1108,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18750&prodName=RN1108 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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RN1108,LF(CT RN1108,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18750&prodName=RN1108 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2865 Stücke:
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500+0.12 EUR
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RN2106MFV,L3F(CT RN2106MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2106MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
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RN2106MFV,L3F(CT RN2106MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5883&prodName=RN2106MFV Description: TRANS PREBIAS PNP 50V 0.1A VESM
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53+0.39 EUR
58+0.37 EUR
106+0.2 EUR
500+0.12 EUR
1000+0.083 EUR
2000+0.071 EUR
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RN2106,LF(CT RN2106,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2106 Description: TRANS PREBIAS PNP 50V 0.1A SSM
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3000+0.08 EUR
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RN2106,LF(CT RN2106,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2106 Description: TRANS PREBIAS PNP 50V 0.1A SSM
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1SS272TE85LF 1SS272TE85LF Toshiba Semiconductor and Storage 1SS272_datasheet_en_20221020.pdf?did=3285&prodName=1SS272 Description: DIODE ARRAY GP 80V 100MA SC-61B
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
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63+0.33 EUR
100+0.27 EUR
500+0.2 EUR
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TLP781(D4GRT6-TC,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP781(D4TELS-T6,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP781(D4-Y,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
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TLP781(D4-Y-TP6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(D4-GRH,E) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(BL-LF6,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(D4-FUN,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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DF2S6M4SL,L3F DF2S6M4SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=36252&prodName=DF2S6M4SL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 20000 Stücke:
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10000+0.079 EUR
20000+0.071 EUR
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DF2S6M4SL,L3F DF2S6M4SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=36252&prodName=DF2S6M4SL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 39640 Stücke:
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46+0.46 EUR
74+0.29 EUR
119+0.18 EUR
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1000+0.11 EUR
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5000+0.088 EUR
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DF2B6M4ASL,L3F DF2B6M4ASL,L3F Toshiba Semiconductor and Storage docget.jsp?did=66266&prodName=DF2B6M4ASL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B6M4ASL,L3F DF2B6M4ASL,L3F Toshiba Semiconductor and Storage docget.jsp?did=66266&prodName=DF2B6M4ASL Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 5661 Stücke:
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34+0.63 EUR
55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
2000+0.14 EUR
5000+0.12 EUR
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CUHZ36V,H3F CUHZ36V,H3F Toshiba Semiconductor and Storage CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V Description: TVS DIODE 36VWM 41.2VC US2H
Voltage - Breakdown (Min): 34V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
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3000+0.18 EUR
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CUHZ36V,H3F CUHZ36V,H3F Toshiba Semiconductor and Storage CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V Description: TVS DIODE 36VWM 41.2VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Voltage - Breakdown (Min): 34V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
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TB67S111PG,HJ TB67S111PG,HJ Toshiba Semiconductor and Storage TB67S111PG_datasheet_en_20170804.pdf?did=57940&prodName=TB67S111PG Description: IC MOTOR DRIVER 16DIP
Part Status: Active
Motor Type - Stepper: Unipolar
Supplier Device Package: 16-DIP
Voltage - Load: 0V ~ 80V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1.5A
Function: Driver
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tray
auf Bestellung 1269 Stücke:
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3+7.58 EUR
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500+4.38 EUR
1000+4.26 EUR
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TCR3DF39,LM(CT TCR3DF39,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF39 Description: IC REG LINEAR 3.9V 300MA SMV
auf Bestellung 3000 Stücke:
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TCR3DF39,LM(CT TCR3DF39,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF39 Description: IC REG LINEAR 3.9V 300MA SMV
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TCR2EN11,LF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.1V IOUT=200MA
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TCR2EN11,LF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.1V IOUT=200MA
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26+0.82 EUR
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37+0.57 EUR
100+0.39 EUR
250+0.33 EUR
500+0.27 EUR
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2500+0.19 EUR
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TCR2EN115,LF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.5V IOUT=200MA
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TCR2EN115,LF(SE Toshiba Semiconductor and Storage Description: LDO REG VOUT=1.5V IOUT=200MA
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26+0.82 EUR
34+0.63 EUR
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100+0.39 EUR
250+0.33 EUR
500+0.27 EUR
1000+0.2 EUR
2500+0.19 EUR
5000+0.18 EUR
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CLS01(T6LSONY,Q) Toshiba Semiconductor and Storage CMS01_Nov2013.pdf Description: DIODE SCHOTTKY 30V 10A L-FLAT
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RN2418,LXHF RN2418,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
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3000+0.11 EUR
6000+0.1 EUR
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RN2418,LXHF RN2418,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18883&prodName=RN2418 Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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39+0.55 EUR
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RN2416,LXHF RN2416,LXHF Toshiba Semiconductor and Storage RN2416_datasheet_en_20210830.pdf?did=18883&prodName=RN2416 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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3000+0.13 EUR
6000+0.11 EUR
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RN2416,LXHF RN2416,LXHF Toshiba Semiconductor and Storage RN2416_datasheet_en_20210830.pdf?did=18883&prodName=RN2416 Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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500+0.17 EUR
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TK1R4F04PB,LXGQ TK1R4F04PB,LXGQ Toshiba Semiconductor and Storage TK1R4F04PB_datasheet_en_20200624.pdf?did=30508&prodName=TK1R4F04PB Description: MOSFET N-CH 40V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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1000+2.27 EUR
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TK1R4F04PB,LXGQ TK1R4F04PB,LXGQ Toshiba Semiconductor and Storage TK1R4F04PB_datasheet_en_20200624.pdf?did=30508&prodName=TK1R4F04PB Description: MOSFET N-CH 40V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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4+6.64 EUR
10+4.33 EUR
100+3.01 EUR
500+2.45 EUR
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CUHZ8V2,H3F CUHZ8V2,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ8V2 Description: TVS DIODE 8.2VWM 8.5VC US2H
Power Line Protection: No
Power - Peak Pulse: 1900W (1.9kW)
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Voltage - Breakdown (Min): 7.7V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 8.2V
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Capacitance @ Frequency: 450pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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CUHZ8V2,H3F CUHZ8V2,H3F Toshiba Semiconductor and Storage docget.jsp?did=70664&prodName=CUHZ8V2 Description: TVS DIODE 8.2VWM 8.5VC US2H
Power Line Protection: No
Power - Peak Pulse: 1900W (1.9kW)
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Voltage - Breakdown (Min): 7.7V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 8.2V
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Capacitance @ Frequency: 450pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 3312 Stücke:
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22+0.99 EUR
35+0.61 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
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2SC4604,T6F(M 2SC4604,T6F(M Toshiba Semiconductor and Storage 2SC4604_2006-11-10.pdf Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SC4604,T6F(J 2SC4604,T6F(J Toshiba Semiconductor and Storage 2SC4604_2006-11-10.pdf Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SC4604,F(J 2SC4604,F(J Toshiba Semiconductor and Storage 2SC4604_2006-11-10.pdf Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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TODX2350A(F) Toshiba Semiconductor and Storage Description: TXRX MOD OPTICAL 10MBPS 650NM
Data Rate: 10Mbps
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Mounting Type: Through Hole
Wavelength: 650nm
Connector Type: JIS F07
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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TLP781F(TP7,F) Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP2395(E TLP2395(E Toshiba Semiconductor and Storage Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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TLP2398(TPL,E TLP2398(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=13956&prodName=TLP2398 Description: OPTOISO 3.75KV PUSH PULL 6-SO
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP2398(E TLP2398(E Toshiba Semiconductor and Storage TLP2398_datasheet_en_20160119.pdf?did=13956&prodName=TLP2398 Description: OPTOISO 3.75KV PUSH PULL 6-SO
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Produkt ist nicht verfügbar
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TLP2395(TPL,E TLP2395(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=13954&prodName=TLP2395 Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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SSM6L56FE,LM SSM6L56FE,LM Toshiba Semiconductor and Storage docget.jsp?did=66256&prodName=SSM6L56FE Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 32000 Stücke:
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4000+0.14 EUR
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SSM6L56FE,LM SSM6L56FE,LM Toshiba Semiconductor and Storage docget.jsp?did=66256&prodName=SSM6L56FE Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
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TLX9185(TOJGBTLF(O Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLX9291(TOJGBTLF(O Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TCR3RM29A,LF(SE TCR3RM29A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG 2.9V 300MA 4DFNC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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TCR3RM29A,LF(SE TCR3RM29A,LF(SE Toshiba Semiconductor and Storage Description: LDO REG 2.9V 300MA 4DFNC
auf Bestellung 8900 Stücke:
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24+0.9 EUR
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100+0.5 EUR
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500+0.38 EUR
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2500+0.26 EUR
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TCR3RM29A,LF TCR3RM29A,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 2.9V 300MA 4DFNC
Produkt ist nicht verfügbar
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TCR3RM29A,LF TCR3RM29A,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 2.9V 300MA 4DFNC
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SSM6K819R,LXHF docget.jsp?did=65097&prodName=SSM6K819R
SSM6K819R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SS MOS N-CH LOGIC-LEV
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP-F
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 3028 Stücke:
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AnzahlPrivatkunde
8+2.93 EUR
12+1.86 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.89 EUR
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TPH9R00CQH,LQ docget.jsp?did=70667&prodName=TPH9R00CQH
TPH9R00CQH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
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AnzahlPrivatkunde
5000+1.45 EUR
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TPH9R00CQH,LQ docget.jsp?did=70667&prodName=TPH9R00CQH
TPH9R00CQH,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 SOP-ADV(N) 150V 9MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
auf Bestellung 9325 Stücke:
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5+4.93 EUR
10+3.18 EUR
100+2.19 EUR
500+1.77 EUR
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RN2116,LXHF(CT docget.jsp?did=18859&prodName=RN2116
RN2116,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
Produkt ist nicht verfügbar
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RN2116,LXHF(CT docget.jsp?did=18859&prodName=RN2116
RN2116,LXHF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q SINGLE PNP Q1BSR=4.7K
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RN2116,LF(CT RN2114-18.pdf
RN2116,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN2116,LF(CT RN2114-18.pdf
RN2116,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Produkt ist nicht verfügbar
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RN1108,LF(CT docget.jsp?did=18750&prodName=RN1108
RN1108,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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RN1108,LF(CT docget.jsp?did=18750&prodName=RN1108
RN1108,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 2865 Stücke:
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50+0.42 EUR
61+0.35 EUR
114+0.19 EUR
500+0.12 EUR
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RN2106MFV,L3F(CT docget.jsp?did=5883&prodName=RN2106MFV
RN2106MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
Produkt ist nicht verfügbar
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RN2106MFV,L3F(CT docget.jsp?did=5883&prodName=RN2106MFV
RN2106MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A VESM
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53+0.39 EUR
58+0.37 EUR
106+0.2 EUR
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RN2106,LF(CT docget.jsp?did=18841&prodName=RN2106
RN2106,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
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3000+0.08 EUR
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RN2106,LF(CT docget.jsp?did=18841&prodName=RN2106
RN2106,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
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1SS272TE85LF 1SS272_datasheet_en_20221020.pdf?did=3285&prodName=1SS272
1SS272TE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC-61B
Supplier Device Package: SC-61B
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-61AA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
auf Bestellung 31501 Stücke:
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42+0.5 EUR
63+0.33 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
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TLP781(D4GRT6-TC,F TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP781(D4TELS-T6,F TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP781(D4-Y,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP781(D4-Y-TP6,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(D4-GRH,E) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(BL-LF6,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP781(D4-FUN,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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DF2S6M4SL,L3F docget.jsp?did=36252&prodName=DF2S6M4SL
DF2S6M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.079 EUR
20000+0.071 EUR
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DF2S6M4SL,L3F docget.jsp?did=36252&prodName=DF2S6M4SL
DF2S6M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 39640 Stücke:
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46+0.46 EUR
74+0.29 EUR
119+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.088 EUR
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DF2B6M4ASL,L3F docget.jsp?did=66266&prodName=DF2B6M4ASL
DF2B6M4ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B6M4ASL,L3F docget.jsp?did=66266&prodName=DF2B6M4ASL
DF2B6M4ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 5661 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
2000+0.14 EUR
5000+0.12 EUR
Mindestbestellmenge: 34 Stücke
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CUHZ36V,H3F CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V
CUHZ36V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 41.2VC US2H
Voltage - Breakdown (Min): 34V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.18 EUR
6000+0.17 EUR
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CUHZ36V,H3F CUHZ16V_datasheet_en_20210917.pdf?did=70664&prodName=CUHZ16V
CUHZ36V,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 36VWM 41.2VC US2H
Power Line Protection: No
Power - Peak Pulse: 2100W (2.1kW)
Voltage - Clamping (Max) @ Ipp: 41.2V (Typ)
Voltage - Breakdown (Min): 34V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 36V
Current - Peak Pulse (10/1000µs): 23A (8/20µs)
Capacitance @ Frequency: 105pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 6907 Stücke:
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AnzahlPrivatkunde
24+0.9 EUR
38+0.56 EUR
100+0.37 EUR
500+0.29 EUR
1000+0.25 EUR
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TB67S111PG,HJ TB67S111PG_datasheet_en_20170804.pdf?did=57940&prodName=TB67S111PG
TB67S111PG,HJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16DIP
Part Status: Active
Motor Type - Stepper: Unipolar
Supplier Device Package: 16-DIP
Voltage - Load: 0V ~ 80V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 1.5A
Function: Driver
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tray
auf Bestellung 1269 Stücke:
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3+7.58 EUR
10+5.74 EUR
25+5.27 EUR
100+4.77 EUR
250+4.53 EUR
500+4.38 EUR
1000+4.26 EUR
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TCR3DF39,LM(CT docget.jsp?did=14709&prodName=TCR3DF39
TCR3DF39,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 300MA SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
Mindestbestellmenge: 3000 Stücke
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TCR3DF39,LM(CT docget.jsp?did=14709&prodName=TCR3DF39
TCR3DF39,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 300MA SMV
auf Bestellung 5592 Stücke:
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AnzahlPrivatkunde
21+1 EUR
29+0.74 EUR
33+0.65 EUR
100+0.42 EUR
250+0.35 EUR
500+0.27 EUR
1000+0.21 EUR
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TCR2EN11,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V IOUT=200MA
auf Bestellung 10000 Stücke:
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10000+0.15 EUR
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TCR2EN11,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.1V IOUT=200MA
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26+0.82 EUR
34+0.63 EUR
37+0.57 EUR
100+0.39 EUR
250+0.33 EUR
500+0.27 EUR
1000+0.2 EUR
2500+0.19 EUR
5000+0.18 EUR
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TCR2EN115,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
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AnzahlPrivatkunde
10000+0.15 EUR
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TCR2EN115,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG VOUT=1.5V IOUT=200MA
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
34+0.63 EUR
37+0.57 EUR
100+0.39 EUR
250+0.33 EUR
500+0.27 EUR
1000+0.2 EUR
2500+0.19 EUR
5000+0.18 EUR
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CLS01(T6LSONY,Q) CMS01_Nov2013.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 10A L-FLAT
Produkt ist nicht verfügbar
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RN2418,LXHF docget.jsp?did=18883&prodName=RN2418
RN2418,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
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RN2418,LXHF docget.jsp?did=18883&prodName=RN2418
RN2418,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
Mindestbestellmenge: 39 Stücke
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RN2416,LXHF RN2416_datasheet_en_20210830.pdf?did=18883&prodName=RN2416
RN2416,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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3000+0.13 EUR
6000+0.11 EUR
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RN2416,LXHF RN2416_datasheet_en_20210830.pdf?did=18883&prodName=RN2416
RN2416,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: S-Mini
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
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AnzahlPrivatkunde
35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
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TK1R4F04PB,LXGQ TK1R4F04PB_datasheet_en_20200624.pdf?did=30508&prodName=TK1R4F04PB
TK1R4F04PB,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
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1000+2.27 EUR
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TK1R4F04PB,LXGQ TK1R4F04PB_datasheet_en_20200624.pdf?did=30508&prodName=TK1R4F04PB
TK1R4F04PB,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 205W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke:
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4+6.64 EUR
10+4.33 EUR
100+3.01 EUR
500+2.45 EUR
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CUHZ8V2,H3F docget.jsp?did=70664&prodName=CUHZ8V2
CUHZ8V2,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 8.5VC US2H
Power Line Protection: No
Power - Peak Pulse: 1900W (1.9kW)
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Voltage - Breakdown (Min): 7.7V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 8.2V
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Capacitance @ Frequency: 450pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.21 EUR
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CUHZ8V2,H3F docget.jsp?did=70664&prodName=CUHZ8V2
CUHZ8V2,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8.2VWM 8.5VC US2H
Power Line Protection: No
Power - Peak Pulse: 1900W (1.9kW)
Voltage - Clamping (Max) @ Ipp: 8.5V (Typ)
Voltage - Breakdown (Min): 7.7V
Unidirectional Channels: 1
Supplier Device Package: US2H
Voltage - Reverse Standoff (Typ): 8.2V
Current - Peak Pulse (10/1000µs): 68A (8/20µs)
Capacitance @ Frequency: 450pF @ 1MHz
Applications: General Purpose
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 3312 Stücke:
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AnzahlPrivatkunde
22+0.99 EUR
35+0.61 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
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2SC4604,T6F(M 2SC4604_2006-11-10.pdf
2SC4604,T6F(M
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SC4604,T6F(J 2SC4604_2006-11-10.pdf
2SC4604,T6F(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SC4604,F(J 2SC4604_2006-11-10.pdf
2SC4604,F(J
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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TODX2350A(F)
Hersteller: Toshiba Semiconductor and Storage
Description: TXRX MOD OPTICAL 10MBPS 650NM
Data Rate: 10Mbps
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Mounting Type: Through Hole
Wavelength: 650nm
Connector Type: JIS F07
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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TLP781F(TP7,F) TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLP2395(E
TLP2395(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR PSH PULL 6MFSOP-5
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tube
Produkt ist nicht verfügbar
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TLP2398(TPL,E docget.jsp?did=13956&prodName=TLP2398
TLP2398(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP2398(E TLP2398_datasheet_en_20160119.pdf?did=13956&prodName=TLP2398
TLP2398(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Supplier Device Package: 6-SO, 5 Lead
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 3V ~ 20V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Current - Output / Channel: 25 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 15ns, 12ns
Produkt ist nicht verfügbar
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TLP2395(TPL,E docget.jsp?did=13954&prodName=TLP2395
TLP2395(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.5V
Data Rate: 5Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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SSM6L56FE,LM docget.jsp?did=66256&prodName=SSM6L56FE
SSM6L56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
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4000+0.14 EUR
8000+0.12 EUR
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SSM6L56FE,LM docget.jsp?did=66256&prodName=SSM6L56FE
SSM6L56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V, 100pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
auf Bestellung 32499 Stücke:
Lieferzeit 10-14 Tag (e)
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32+0.67 EUR
51+0.42 EUR
100+0.26 EUR
500+0.19 EUR
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2000+0.15 EUR
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TLX9185(TOJGBTLF(O
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TLX9291(TOJGBTLF(O
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Produkt ist nicht verfügbar
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TCR3RM29A,LF(SE
TCR3RM29A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 2.9V 300MA 4DFNC
Produkt ist nicht verfügbar
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TCR3RM29A,LF(SE
TCR3RM29A,LF(SE
Hersteller: Toshiba Semiconductor and Storage
Description: LDO REG 2.9V 300MA 4DFNC
auf Bestellung 8900 Stücke:
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24+0.9 EUR
29+0.74 EUR
32+0.67 EUR
100+0.5 EUR
250+0.45 EUR
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2500+0.26 EUR
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TCR3RM29A,LF
TCR3RM29A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA 4DFNC
Produkt ist nicht verfügbar
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TCR3RM29A,LF
TCR3RM29A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.9V 300MA 4DFNC
auf Bestellung 275 Stücke:
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23+0.92 EUR
29+0.75 EUR
31+0.69 EUR
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