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RN2703,LF RN2703,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2703 Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN2703,LF RN2703,LF Toshiba Semiconductor and Storage docget.jsp?did=18900&prodName=RN2703 Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 46 Stücke
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74LCX273FT(AJ) 74LCX273FT(AJ) Toshiba Semiconductor and Storage docget.jsp?did=15649&prodName=74LCX273FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 9.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.24 EUR
5000+0.23 EUR
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74LCX273FT(AJ) 74LCX273FT(AJ) Toshiba Semiconductor and Storage docget.jsp?did=15649&prodName=74LCX273FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 9.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 9925 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.82 EUR
32+0.67 EUR
35+0.62 EUR
100+0.45 EUR
250+0.42 EUR
500+0.35 EUR
1000+0.26 EUR
Mindestbestellmenge: 26 Stücke
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TJ50S06M3L,LXHQ TJ50S06M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=22572&prodName=TJ50S06M3L Description: MOSFET P-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.18 EUR
6000+1.06 EUR
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TJ50S06M3L,LXHQ TJ50S06M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=22572&prodName=TJ50S06M3L Description: MOSFET P-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 8801 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.08 EUR
10+2.61 EUR
50+1.96 EUR
100+1.76 EUR
500+1.39 EUR
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TTA006B,Q(S Toshiba Semiconductor and Storage Description: TRANSISTOR PNP BIPO TO126N
Packaging: Tube
Produkt ist nicht verfügbar
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TLP387(TPL,E TLP387(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=35919&prodName=TLP387 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP387(TPL,E TLP387(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=35919&prodName=TLP387 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2594 Stücke:
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14+1.52 EUR
20+1.06 EUR
100+0.79 EUR
500+0.65 EUR
1000+0.61 EUR
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TLP523-4(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-4(MBS,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-4(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN2309,LF RN2309,LF Toshiba Semiconductor and Storage RN2309_datasheet_en_20210824.pdf?did=19003&prodName=RN2309 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.05 EUR
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RN2309,LF RN2309,LF Toshiba Semiconductor and Storage RN2309_datasheet_en_20210824.pdf?did=19003&prodName=RN2309 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.19 EUR
159+0.13 EUR
238+0.088 EUR
500+0.067 EUR
1000+0.06 EUR
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TC7SH125FU,LJ(CT TC7SH125FU,LJ(CT Toshiba Semiconductor and Storage TC7SH125FU_datasheet_en_20170516.pdf?did=30172&prodName=TC7SH125FU Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TC7SH125FU,LJ(CT TC7SH125FU,LJ(CT Toshiba Semiconductor and Storage TC7SH125FU_datasheet_en_20170516.pdf?did=30172&prodName=TC7SH125FU Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 2616 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.61 EUR
61+0.35 EUR
74+0.29 EUR
100+0.21 EUR
250+0.18 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 35 Stücke
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74VHC9595FT 74VHC9595FT Toshiba Semiconductor and Storage docget.jsp?did=28789&prodName=74VHC9595FT Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
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2500+0.17 EUR
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74VHC9595FT 74VHC9595FT Toshiba Semiconductor and Storage docget.jsp?did=28789&prodName=74VHC9595FT Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 6695 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
72+0.3 EUR
82+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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TB67H410NG TB67H410NG Toshiba Semiconductor and Storage TB67H410NG_datasheet_en_20150127.pdf?did=29679&prodName=TB67H410NG Description: IC MOTOR DRVR 4.75V-5.25V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 62 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.13 EUR
20+4.62 EUR
40+4.37 EUR
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TJ20S04M3L,LXHQ TJ20S04M3L,LXHQ Toshiba Semiconductor and Storage TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.75 EUR
4000+0.69 EUR
6000+0.67 EUR
Mindestbestellmenge: 2000 Stücke
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TJ20S04M3L,LXHQ TJ20S04M3L,LXHQ Toshiba Semiconductor and Storage TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L Description: MOSFET P-CH 40V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
auf Bestellung 9718 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.75 EUR
13+1.74 EUR
100+1.15 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 8 Stücke
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TJ80S04M3L,LXHQ TJ80S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11287&prodName=TJ80S04M3L Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TJ80S04M3L,LXHQ TJ80S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11287&prodName=TJ80S04M3L Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ40S04M3L,LXHQ TJ40S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11299&prodName=TJ40S04M3L Description: MOSFET P-CH 40V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.88 EUR
4000+0.82 EUR
Mindestbestellmenge: 2000 Stücke
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TJ40S04M3L,LXHQ TJ40S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11299&prodName=TJ40S04M3L Description: MOSFET P-CH 40V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5818 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.81 EUR
12+1.86 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.95 EUR
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TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Toshiba Semiconductor and Storage TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.89 EUR
Mindestbestellmenge: 1000 Stücke
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TJ200F04M3L,LXHQ TJ200F04M3L,LXHQ Toshiba Semiconductor and Storage TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
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3+8.16 EUR
10+5.38 EUR
50+4.18 EUR
100+3.78 EUR
500+3.21 EUR
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SSM3J64CTC,L3F SSM3J64CTC,L3F Toshiba Semiconductor and Storage docget.jsp?did=59149&prodName=SSM3J64CTC Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J64CTC,L3F SSM3J64CTC,L3F Toshiba Semiconductor and Storage docget.jsp?did=59149&prodName=SSM3J64CTC Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
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100+0.3 EUR
500+0.23 EUR
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SSM3J65CTC,L3F SSM3J65CTC,L3F Toshiba Semiconductor and Storage SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
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SSM3J65CTC,L3F SSM3J65CTC,L3F Toshiba Semiconductor and Storage SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
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41+0.51 EUR
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500+0.23 EUR
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2SD1223,L1XGQ(O Toshiba Semiconductor and Storage 2SD1223_datasheet_en_20131101.pdf?did=20861&prodName=2SD1223 Description: TRANSISTOR NPN DARL PWMOLD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR3UG285A,LF TCR3UG285A,LF Toshiba Semiconductor and Storage docget.jsp?did=59176&prodName=TCR3UG285A Description: IC REG LINEAR 2.85V 300MA 4WCSPF
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TCR3UG285A,LF TCR3UG285A,LF Toshiba Semiconductor and Storage docget.jsp?did=59176&prodName=TCR3UG285A Description: IC REG LINEAR 2.85V 300MA 4WCSPF
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TCR3UG28A,LF TCR3UG28A,LF Toshiba Semiconductor and Storage TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Produkt ist nicht verfügbar
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TCR3UG28A,LF TCR3UG28A,LF Toshiba Semiconductor and Storage TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 4898 Stücke:
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24+0.88 EUR
29+0.73 EUR
32+0.67 EUR
100+0.49 EUR
250+0.45 EUR
500+0.37 EUR
1000+0.27 EUR
2500+0.25 EUR
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TLP185(V4GBTL,SE TLP185(V4GBTL,SE Toshiba Semiconductor and Storage docget.jsp?did=14111&prodName=TLP185(SE Description: OPTOISO 3.75KV TRANS W/BASE 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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CUHS15S30,H3F CUHS15S30,H3F Toshiba Semiconductor and Storage CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30 Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
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CUHS15S30,H3F CUHS15S30,H3F Toshiba Semiconductor and Storage CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30 Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 41492 Stücke:
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TLP161G(T7TL,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T7TR,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T5TL,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(TPL,U,C,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT7,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT5,U,C,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP628-2(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TK190U65Z,RQ TK190U65Z,RQ Toshiba Semiconductor and Storage docget.jsp?did=69977&prodName=TK190U65Z Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Produkt ist nicht verfügbar
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TC7QPB9307FK(EL) TC7QPB9307FK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57137&prodName=TC7QPB9307FK Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
Produkt ist nicht verfügbar
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TC7QPB9307FK(EL) TC7QPB9307FK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57137&prodName=TC7QPB9307FK Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
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21+1.02 EUR
25+0.93 EUR
100+0.81 EUR
250+0.75 EUR
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SSM3J377R,LXHF SSM3J377R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59203&prodName=SSM3J377R Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
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3000+0.17 EUR
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SSM3J377R,LXHF SSM3J377R,LXHF Toshiba Semiconductor and Storage docget.jsp?did=59203&prodName=SSM3J377R Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
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100+0.29 EUR
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TCKE805NA,RF TCKE805NA,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE805NA Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
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TCKE805NA,RF TCKE805NA,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE805NA Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 2329 Stücke:
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8+2.92 EUR
10+2.14 EUR
25+1.94 EUR
100+1.73 EUR
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500+1.56 EUR
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SSM3K44MFV,L3F SSM3K44MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=363&prodName=SSM3K44MFV Description: MOSFET N-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM3K44MFV,L3F SSM3K44MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=363&prodName=SSM3K44MFV Description: MOSFET N-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
auf Bestellung 2704 Stücke:
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50+0.42 EUR
82+0.25 EUR
115+0.18 EUR
132+0.15 EUR
500+0.12 EUR
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TLX9376(TPL,F TLX9376(TPL,F Toshiba Semiconductor and Storage docget.jsp?did=53145&prodName=TLX9376 Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
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TLX9376(TPL,F TLX9376(TPL,F Toshiba Semiconductor and Storage docget.jsp?did=53145&prodName=TLX9376 Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
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100+4.65 EUR
500+3.92 EUR
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TCK22946G,LF TCK22946G,LF Toshiba Semiconductor and Storage TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
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TCK22946G,LF TCK22946G,LF Toshiba Semiconductor and Storage TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Part Status: Active
auf Bestellung 1660 Stücke:
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24+0.9 EUR
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100+0.55 EUR
500+0.43 EUR
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RN1107,LF(CT RN1107,LF(CT Toshiba Semiconductor and Storage RN1107,8,9.pdf Description: TRANS PREBIAS NPN 50V 0.1A SSM
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RN2703,LF docget.jsp?did=18900&prodName=RN2703
RN2703,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
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RN2703,LF docget.jsp?did=18900&prodName=RN2703
RN2703,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: USV
auf Bestellung 2975 Stücke:
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46+0.46 EUR
75+0.29 EUR
120+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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74LCX273FT(AJ) docget.jsp?did=15649&prodName=74LCX273FT
74LCX273FT(AJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 9.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 7500 Stücke:
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2500+0.24 EUR
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74LCX273FT(AJ) docget.jsp?did=15649&prodName=74LCX273FT
74LCX273FT(AJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 135 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 9.5ns @ 3.3V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 9925 Stücke:
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26+0.82 EUR
32+0.67 EUR
35+0.62 EUR
100+0.45 EUR
250+0.42 EUR
500+0.35 EUR
1000+0.26 EUR
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TJ50S06M3L,LXHQ docget.jsp?did=22572&prodName=TJ50S06M3L
TJ50S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 8000 Stücke:
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2000+1.18 EUR
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TJ50S06M3L,LXHQ docget.jsp?did=22572&prodName=TJ50S06M3L
TJ50S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 10 V
auf Bestellung 8801 Stücke:
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6+4.08 EUR
10+2.61 EUR
50+1.96 EUR
100+1.76 EUR
500+1.39 EUR
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TTA006B,Q(S
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR PNP BIPO TO126N
Packaging: Tube
Produkt ist nicht verfügbar
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TLP387(TPL,E docget.jsp?did=35919&prodName=TLP387
TLP387(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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TLP387(TPL,E docget.jsp?did=35919&prodName=TLP387
TLP387(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width), 4 Leads
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SO, 4 Lead
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 50µs, 15µs
Rise / Fall Time (Typ): 40µs, 15µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2594 Stücke:
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14+1.52 EUR
20+1.06 EUR
100+0.79 EUR
500+0.65 EUR
1000+0.61 EUR
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TLP523-4(LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-4(MBS,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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TLP523-4(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
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RN2309,LF RN2309_datasheet_en_20210824.pdf?did=19003&prodName=RN2309
RN2309,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.05 EUR
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RN2309,LF RN2309_datasheet_en_20210824.pdf?did=19003&prodName=RN2309
RN2309,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
159+0.13 EUR
238+0.088 EUR
500+0.067 EUR
1000+0.06 EUR
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TC7SH125FU,LJ(CT TC7SH125FU_datasheet_en_20170516.pdf?did=30172&prodName=TC7SH125FU
TC7SH125FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
Produkt ist nicht verfügbar
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TC7SH125FU,LJ(CT TC7SH125FU_datasheet_en_20170516.pdf?did=30172&prodName=TC7SH125FU
TC7SH125FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 5-SSOP
auf Bestellung 2616 Stücke:
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35+0.61 EUR
61+0.35 EUR
74+0.29 EUR
100+0.21 EUR
250+0.18 EUR
500+0.15 EUR
1000+0.13 EUR
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74VHC9595FT docget.jsp?did=28789&prodName=74VHC9595FT
74VHC9595FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.17 EUR
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74VHC9595FT docget.jsp?did=28789&prodName=74VHC9595FT
74VHC9595FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC SR PUSH-PULL 8BIT 16-TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 6695 Stücke:
Lieferzeit 10-14 Tag (e)
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48+0.44 EUR
72+0.3 EUR
82+0.26 EUR
100+0.23 EUR
250+0.2 EUR
500+0.19 EUR
1000+0.18 EUR
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TB67H410NG TB67H410NG_datasheet_en_20150127.pdf?did=29679&prodName=TB67H410NG
TB67H410NG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 5A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 10V ~ 47V
Supplier Device Package: 24-SDIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 62 Stücke:
Lieferzeit 10-14 Tag (e)
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5+5.13 EUR
20+4.62 EUR
40+4.37 EUR
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TJ20S04M3L,LXHQ TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L
TJ20S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
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2000+0.75 EUR
4000+0.69 EUR
6000+0.67 EUR
Mindestbestellmenge: 2000 Stücke
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TJ20S04M3L,LXHQ TJ20S04M3L_datasheet_en_20200624.pdf?did=11300&prodName=TJ20S04M3L
TJ20S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
auf Bestellung 9718 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.75 EUR
13+1.74 EUR
100+1.15 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 8 Stücke
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TJ80S04M3L,LXHQ docget.jsp?did=11287&prodName=TJ80S04M3L
TJ80S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ80S04M3L,LXHQ docget.jsp?did=11287&prodName=TJ80S04M3L
TJ80S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 80A DPAK
Produkt ist nicht verfügbar
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TJ40S04M3L,LXHQ docget.jsp?did=11299&prodName=TJ40S04M3L
TJ40S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.88 EUR
4000+0.82 EUR
Mindestbestellmenge: 2000 Stücke
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TJ40S04M3L,LXHQ docget.jsp?did=11299&prodName=TJ40S04M3L
TJ40S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5818 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.81 EUR
12+1.86 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.95 EUR
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TJ200F04M3L,LXHQ TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L
TJ200F04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.89 EUR
Mindestbestellmenge: 1000 Stücke
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TJ200F04M3L,LXHQ TJ200F04M3L_datasheet_en_20241217.pdf?did=29739&prodName=TJ200F04M3L
TJ200F04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2853 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.16 EUR
10+5.38 EUR
50+4.18 EUR
100+3.78 EUR
500+3.21 EUR
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SSM3J64CTC,L3F docget.jsp?did=59149&prodName=SSM3J64CTC
SSM3J64CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Produkt ist nicht verfügbar
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SSM3J64CTC,L3F docget.jsp?did=59149&prodName=SSM3J64CTC
SSM3J64CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 1A CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 17897 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
44+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
5000+0.15 EUR
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SSM3J65CTC,L3F SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC
SSM3J65CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.14 EUR
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SSM3J65CTC,L3F SSM3J65CTC_datasheet_en_20210311.pdf?did=59151&prodName=SSM3J65CTC
SSM3J65CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 700MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3C
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
auf Bestellung 26774 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
41+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
2000+0.17 EUR
5000+0.15 EUR
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2SD1223,L1XGQ(O 2SD1223_datasheet_en_20131101.pdf?did=20861&prodName=2SD1223
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN DARL PWMOLD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR3UG285A,LF docget.jsp?did=59176&prodName=TCR3UG285A
TCR3UG285A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA 4WCSPF
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 5000 Stücke
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TCR3UG285A,LF docget.jsp?did=59176&prodName=TCR3UG285A
TCR3UG285A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 300MA 4WCSPF
auf Bestellung 9785 Stücke:
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TCR3UG28A,LF TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A
TCR3UG28A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Produkt ist nicht verfügbar
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TCR3UG28A,LF TCR3UG12A_datasheet_en_20220111.pdf?did=59176&prodName=TCR3UG12A
TCR3UG28A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.8V 300MA 4WCSP-F
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 680 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.327V @ 300mA
Protection Features: Inrush Current, Over Current, Thermal Shutdown
auf Bestellung 4898 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
29+0.73 EUR
32+0.67 EUR
100+0.49 EUR
250+0.45 EUR
500+0.37 EUR
1000+0.27 EUR
2500+0.25 EUR
Mindestbestellmenge: 24 Stücke
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TLP185(V4GBTL,SE docget.jsp?did=14111&prodName=TLP185(SE
TLP185(V4GBTL,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS W/BASE 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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CUHS15S30,H3F CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30
CUHS15S30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
30000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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CUHS15S30,H3F CUHS15S30_datasheet_en_20190920.pdf?did=66023&prodName=CUHS15S30
CUHS15S30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 41492 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
40+0.54 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
Mindestbestellmenge: 31 Stücke
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TLP161G(T7TL,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T7TR,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(T5TL,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(TPL,U,C,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT7,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP161G(IFT5,U,C,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP628-2(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TK190U65Z,RQ docget.jsp?did=69977&prodName=TK190U65Z
TK190U65Z,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: DTMOS VI TOLL PD=130W F=1MHZ
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 610µA
Supplier Device Package: TOLL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TC7QPB9307FK(EL) docget.jsp?did=57137&prodName=TC7QPB9307FK
TC7QPB9307FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TC7QPB9307FK(EL) docget.jsp?did=57137&prodName=TC7QPB9307FK
TC7QPB9307FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 14-VSSOP
auf Bestellung 2149 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.44 EUR
21+1.02 EUR
25+0.93 EUR
100+0.81 EUR
250+0.75 EUR
500+0.73 EUR
1000+0.71 EUR
Mindestbestellmenge: 15 Stücke
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SSM3J377R,LXHF docget.jsp?did=59203&prodName=SSM3J377R
SSM3J377R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J377R,LXHF docget.jsp?did=59203&prodName=SSM3J377R
SSM3J377R,LXHF
Hersteller: Toshiba Semiconductor and Storage
Description: AECQ MOSFET PCH 20V 3.9A SOT23
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): +6V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8746 Stücke:
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AnzahlPrivatkunde
28+0.75 EUR
46+0.46 EUR
64+0.33 EUR
100+0.29 EUR
500+0.21 EUR
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TCKE805NA,RF docget.jsp?did=139443&prodName=TCKE805NA
TCKE805NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
Produkt ist nicht verfügbar
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TCKE805NA,RF docget.jsp?did=139443&prodName=TCKE805NA
TCKE805NA,RF
Hersteller: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Packaging: Cut Tape (CT)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 4.4V ~ 18V
Current - Output: 5A
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-WSONB (3x3)
Part Status: Active
auf Bestellung 2329 Stücke:
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AnzahlPrivatkunde
8+2.92 EUR
10+2.14 EUR
25+1.94 EUR
100+1.73 EUR
250+1.62 EUR
500+1.56 EUR
1000+1.55 EUR
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SSM3K44MFV,L3F docget.jsp?did=363&prodName=SSM3K44MFV
SSM3K44MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM3K44MFV,L3F docget.jsp?did=363&prodName=SSM3K44MFV
SSM3K44MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: VESM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 8.5 pF @ 3 V
auf Bestellung 2704 Stücke:
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AnzahlPrivatkunde
50+0.42 EUR
82+0.25 EUR
115+0.18 EUR
132+0.15 EUR
500+0.12 EUR
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TLX9376(TPL,F docget.jsp?did=53145&prodName=TLX9376
TLX9376(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+3.45 EUR
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TLX9376(TPL,F docget.jsp?did=53145&prodName=TLX9376
TLX9376(TPL,F
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3750VRMS 1CH LOGIC 6SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.57V
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2ns, 2ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Grade: Automotive
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Current - DC Forward (If) (Max): 25 mA
Qualification: AEC-Q101
auf Bestellung 5910 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.02 EUR
10+5.68 EUR
100+4.65 EUR
500+3.92 EUR
1000+3.59 EUR
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TCK22946G,LF TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G
TCK22946G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
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TCK22946G,LF TCK22946G_datasheet_en_20220609.pdf?did=36710&prodName=TCK22946G
TCK22946G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
Part Status: Active
auf Bestellung 1660 Stücke:
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AnzahlPrivatkunde
24+0.9 EUR
27+0.77 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.35 EUR
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RN1107,LF(CT RN1107,8,9.pdf
RN1107,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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