Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13050) > Seite 145 nach 218

Wählen Sie Seite:   [  << Vorherige Seite ]  1 21 42 63 84 105 126 140 141 142 143 144 145 146 147 148 149 150 168 189 210 218  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
TRS16N65FB,S1Q TRS16N65FB,S1Q Toshiba Semiconductor and Storage datasheet_en_20200703.pdf?did=69235 Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.54 EUR
30+ 7.56 EUR
120+ 6.48 EUR
Mindestbestellmenge: 2
RN2426(TE85L,F) RN2426(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18885&prodName=RN2426 Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Produkt ist nicht verfügbar
RN2426(TE85L,F) RN2426(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=18885&prodName=RN2426 Description: TRANS PREBIAS PNP 50V 0.8A SMINI
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
TPH1R306PL,L1Q TPH1R306PL,L1Q Toshiba Semiconductor and Storage TPH1R306PL_datasheet_en_20191018.pdf?did=30818&prodName=TPH1R306PL Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.41 EUR
Mindestbestellmenge: 5000
TPH1R306PL,L1Q TPH1R306PL,L1Q Toshiba Semiconductor and Storage TPH1R306PL_datasheet_en_20191018.pdf?did=30818&prodName=TPH1R306PL Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 9688 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.26 EUR
10+ 2.7 EUR
100+ 2.15 EUR
500+ 1.82 EUR
1000+ 1.54 EUR
2000+ 1.46 EUR
Mindestbestellmenge: 6
MT3S113TU,LF MT3S113TU,LF Toshiba Semiconductor and Storage MT3S113TU_datasheet_en_20140301.pdf?did=2086&prodName=MT3S113TU Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
Produkt ist nicht verfügbar
MT3S113TU,LF MT3S113TU,LF Toshiba Semiconductor and Storage MT3S113TU_datasheet_en_20140301.pdf?did=2086&prodName=MT3S113TU Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
19+ 0.95 EUR
25+ 0.85 EUR
100+ 0.75 EUR
250+ 0.65 EUR
500+ 0.58 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 17
MT3S113P(TE12L,F) MT3S113P(TE12L,F) Toshiba Semiconductor and Storage MT3S113P_datasheet_en_20140301.pdf?did=2071&prodName=MT3S113P Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1.6W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
Produkt ist nicht verfügbar
MT3S113P(TE12L,F) MT3S113P(TE12L,F) Toshiba Semiconductor and Storage MT3S113P_datasheet_en_20140301.pdf?did=2071&prodName=MT3S113P Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1.6W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
TTC4116FU,LF TTC4116FU,LF Toshiba Semiconductor and Storage docget.jsp?did=4359&prodName=TTC4116FU Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
TTC4116FU,LF TTC4116FU,LF Toshiba Semiconductor and Storage docget.jsp?did=4359&prodName=TTC4116FU Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 1319 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
55+ 0.32 EUR
104+ 0.17 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 44
TLP3406SRL(TP,E TLP3406SRL(TP,E Toshiba Semiconductor and Storage TLP3406SRL_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+4.67 EUR
Mindestbestellmenge: 2500
TLP3406SRL(TP,E TLP3406SRL(TP,E Toshiba Semiconductor and Storage TLP3406SRL_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 3497 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.88 EUR
10+ 7.69 EUR
100+ 6.3 EUR
500+ 5.31 EUR
1000+ 4.87 EUR
Mindestbestellmenge: 2
TLP3406SRH(TP,E TLP3406SRH(TP,E Toshiba Semiconductor and Storage TLP3406SRH_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
Produkt ist nicht verfügbar
TLP3406SRH(TP,E TLP3406SRH(TP,E Toshiba Semiconductor and Storage TLP3406SRH_Prelim_DS.pdf Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 2216 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.88 EUR
10+ 7.69 EUR
100+ 6.3 EUR
500+ 5.31 EUR
1000+ 4.87 EUR
Mindestbestellmenge: 2
TLP2355(E TLP2355(E Toshiba Semiconductor and Storage TLP2355_datasheet_en_20191119.pdf?did=11905&prodName=TLP2355 Description: X36 PB-F PHOTOCOUPLER SO6 ROHS B
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.6 EUR
18+ 1.02 EUR
125+ 0.75 EUR
Mindestbestellmenge: 11
TPN2R903PL,L1Q TPN2R903PL,L1Q Toshiba Semiconductor and Storage TPN2R903PL_datasheet_en_20191030.pdf?did=55425&prodName=TPN2R903PL Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.46 EUR
10000+ 0.42 EUR
Mindestbestellmenge: 5000
TPN2R903PL,L1Q TPN2R903PL,L1Q Toshiba Semiconductor and Storage TPN2R903PL_datasheet_en_20191030.pdf?did=55425&prodName=TPN2R903PL Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 37456 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
16+ 1.11 EUR
100+ 0.76 EUR
500+ 0.64 EUR
1000+ 0.54 EUR
2000+ 0.48 EUR
Mindestbestellmenge: 14
TPN2R805PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=53831&prodName=TPN2R805PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Produkt ist nicht verfügbar
TRS8A65F,S1Q TRS8A65F,S1Q Toshiba Semiconductor and Storage Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 28pF @ 650V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.76 EUR
10+ 4.83 EUR
Mindestbestellmenge: 4
TRS8E65F,S1Q TRS8E65F,S1Q Toshiba Semiconductor and Storage TRS8E65F_datasheet_en_20180627.pdf?did=53519&prodName=TRS8E65F Description: DIODE SIL CARB 650V 8A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 28pF @ 650V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.86 EUR
Mindestbestellmenge: 4
HDEPX10GEA51F HDEPX10GEA51F Toshiba Semiconductor and Storage Description: 16TB SATA NEARLINE 512E
Packaging: Bulk
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
1+1271.95 EUR
10+ 1253.1 EUR
MQ01ABF032 MQ01ABF032 Toshiba Semiconductor and Storage Description: 320GB 2.5" SATA III 5V 5.4RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 320GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
1+105.05 EUR
10+ 95.2 EUR
25+ 91.92 EUR
50+ 88.64 EUR
100+ 87.32 EUR
TC7SZ07FU,LJ(CT TC7SZ07FU,LJ(CT Toshiba Semiconductor and Storage TC7SZ07FU_datasheet_en_20170517.pdf?did=54757&prodName=TC7SZ07FU Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.089 EUR
6000+ 0.078 EUR
15000+ 0.066 EUR
Mindestbestellmenge: 3000
TC7SZ07FU,LJ(CT TC7SZ07FU,LJ(CT Toshiba Semiconductor and Storage TC7SZ07FU_datasheet_en_20170517.pdf?did=54757&prodName=TC7SZ07FU Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Part Status: Active
auf Bestellung 27412 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
43+ 0.42 EUR
51+ 0.35 EUR
100+ 0.22 EUR
250+ 0.17 EUR
500+ 0.15 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
BAS516,L3F BAS516,L3F Toshiba Semiconductor and Storage BAS516_datasheet_en_20221219.pdf?did=55427&prodName=BAS516 Description: DIODE GEN PURP 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.046 EUR
16000+ 0.039 EUR
24000+ 0.036 EUR
Mindestbestellmenge: 8000
BAS516,L3F BAS516,L3F Toshiba Semiconductor and Storage BAS516_datasheet_en_20221219.pdf?did=55427&prodName=BAS516 Description: DIODE GEN PURP 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 69440 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
2000+ 0.049 EUR
Mindestbestellmenge: 63
RN4991FE,LF(CT RN4991FE,LF(CT Toshiba Semiconductor and Storage RN4991FE_datasheet_en_20210818.pdf?did=19063&prodName=RN4991FE Description: NPN + PNP BRT Q1BSR10KOHM Q1BERI
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.064 EUR
Mindestbestellmenge: 4000
RN4991FE,LF(CT RN4991FE,LF(CT Toshiba Semiconductor and Storage RN4991FE_datasheet_en_20210818.pdf?did=19063&prodName=RN4991FE Description: NPN + PNP BRT Q1BSR10KOHM Q1BERI
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
68+ 0.26 EUR
138+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.064 EUR
Mindestbestellmenge: 46
RN1911,LF(CT RN1911,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18828&prodName=RN1911 Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.087 EUR
6000+ 0.075 EUR
Mindestbestellmenge: 3000
RN1911,LF(CT RN1911,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18828&prodName=RN1911 Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN4908,LF(CT RN4908,LF(CT Toshiba Semiconductor and Storage RN4908_datasheet_en_20210824.pdf?did=18963&prodName=RN4908 Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.071 EUR
Mindestbestellmenge: 3000
RN4908,LF(CT RN4908,LF(CT Toshiba Semiconductor and Storage RN4908_datasheet_en_20210824.pdf?did=18963&prodName=RN4908 Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
61+ 0.29 EUR
124+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.082 EUR
Mindestbestellmenge: 42
RN1707,LF RN1707,LF Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.079 EUR
6000+ 0.073 EUR
Mindestbestellmenge: 3000
RN1707,LF RN1707,LF Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 8691 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 38
RN1711,LF RN1711,LF Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
RN1711,LF RN1711,LF Toshiba Semiconductor and Storage Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 38
RN2702,LF RN2702,LF Toshiba Semiconductor and Storage RN2702_datasheet_en_20191024.pdf?did=18900&prodName=RN2702 Description: TRANSISTOR PNPX2 BRT Q1BSR10KOHM
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.079 EUR
Mindestbestellmenge: 3000
RN2702,LF RN2702,LF Toshiba Semiconductor and Storage RN2702_datasheet_en_20191024.pdf?did=18900&prodName=RN2702 Description: TRANSISTOR PNPX2 BRT Q1BSR10KOHM
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 5998 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 38
RN2708,LF RN2708,LF Toshiba Semiconductor and Storage RN2708_datasheet_en_20191029.pdf?did=18903&prodName=RN2708 Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.079 EUR
Mindestbestellmenge: 3000
RN2708,LF RN2708,LF Toshiba Semiconductor and Storage RN2708_datasheet_en_20191029.pdf?did=18903&prodName=RN2708 Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 38
RN2714,LF RN2714,LF Toshiba Semiconductor and Storage RN2714_datasheet_en_20191030.pdf?did=6018&prodName=RN2714 Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Produkt ist nicht verfügbar
RN2714,LF RN2714,LF Toshiba Semiconductor and Storage RN2714_datasheet_en_20191030.pdf?did=6018&prodName=RN2714 Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Produkt ist nicht verfügbar
RN1106MFV,L3F(CT RN1106MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1106MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN1106MFV,L3F(CT RN1106MFV,L3F(CT Toshiba Semiconductor and Storage docget.jsp?did=5879&prodName=RN1106MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
61+ 0.29 EUR
113+ 0.16 EUR
500+ 0.097 EUR
1000+ 0.066 EUR
2000+ 0.056 EUR
Mindestbestellmenge: 56
TCR3DG13,LF TCR3DG13,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DG13,LF TCR3DG13,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DG135,LF TCR3DG135,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.53V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DG135,LF TCR3DG135,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.53V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR2DG13,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR2DG13,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR2EE145,LM(CT TCR2EE145,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=13794&prodName=TCR2EE145 Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EE145,LM(CT TCR2EE145,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=13794&prodName=TCR2EE145 Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Produkt ist nicht verfügbar
TLP731(D4-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GB-TP1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-BL-TP1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(GR,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GB-LF2,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-BL-LF2,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GB-LF4,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TRS16N65FB,S1Q datasheet_en_20200703.pdf?did=69235
TRS16N65FB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.54 EUR
30+ 7.56 EUR
120+ 6.48 EUR
Mindestbestellmenge: 2
RN2426(TE85L,F) docget.jsp?did=18885&prodName=RN2426
RN2426(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.8A SMINI
Produkt ist nicht verfügbar
RN2426(TE85L,F) docget.jsp?did=18885&prodName=RN2426
RN2426(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.8A SMINI
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
TPH1R306PL,L1Q TPH1R306PL_datasheet_en_20191018.pdf?did=30818&prodName=TPH1R306PL
TPH1R306PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.41 EUR
Mindestbestellmenge: 5000
TPH1R306PL,L1Q TPH1R306PL_datasheet_en_20191018.pdf?did=30818&prodName=TPH1R306PL
TPH1R306PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
auf Bestellung 9688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.26 EUR
10+ 2.7 EUR
100+ 2.15 EUR
500+ 1.82 EUR
1000+ 1.54 EUR
2000+ 1.46 EUR
Mindestbestellmenge: 6
MT3S113TU,LF MT3S113TU_datasheet_en_20140301.pdf?did=2086&prodName=MT3S113TU
MT3S113TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
Produkt ist nicht verfügbar
MT3S113TU,LF MT3S113TU_datasheet_en_20140301.pdf?did=2086&prodName=MT3S113TU
MT3S113TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 11.2GHZ UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 900mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 11.2GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: UFM
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.07 EUR
19+ 0.95 EUR
25+ 0.85 EUR
100+ 0.75 EUR
250+ 0.65 EUR
500+ 0.58 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 17
MT3S113P(TE12L,F) MT3S113P_datasheet_en_20140301.pdf?did=2071&prodName=MT3S113P
MT3S113P(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1.6W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
Produkt ist nicht verfügbar
MT3S113P(TE12L,F) MT3S113P_datasheet_en_20140301.pdf?did=2071&prodName=MT3S113P
MT3S113P(TE12L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB
Power - Max: 1.6W
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5.3V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 7.7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Supplier Device Package: PW-MINI
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
TTC4116FU,LF docget.jsp?did=4359&prodName=TTC4116FU
TTC4116FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Produkt ist nicht verfügbar
TTC4116FU,LF docget.jsp?did=4359&prodName=TTC4116FU
TTC4116FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
auf Bestellung 1319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
44+0.4 EUR
55+ 0.32 EUR
104+ 0.17 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 44
TLP3406SRL(TP,E TLP3406SRL_Prelim_DS.pdf
TLP3406SRL(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+4.67 EUR
Mindestbestellmenge: 2500
TLP3406SRL(TP,E TLP3406SRL_Prelim_DS.pdf
TLP3406SRL(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 3497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.88 EUR
10+ 7.69 EUR
100+ 6.3 EUR
500+ 5.31 EUR
1000+ 4.87 EUR
Mindestbestellmenge: 2
TLP3406SRH(TP,E TLP3406SRH_Prelim_DS.pdf
TLP3406SRH(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
Produkt ist nicht verfügbar
TLP3406SRH(TP,E TLP3406SRH_Prelim_DS.pdf
TLP3406SRH(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 1.5 A
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 200 mOhms
auf Bestellung 2216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.88 EUR
10+ 7.69 EUR
100+ 6.3 EUR
500+ 5.31 EUR
1000+ 4.87 EUR
Mindestbestellmenge: 2
TLP2355(E TLP2355_datasheet_en_20191119.pdf?did=11905&prodName=TLP2355
TLP2355(E
Hersteller: Toshiba Semiconductor and Storage
Description: X36 PB-F PHOTOCOUPLER SO6 ROHS B
Packaging: Tube
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
auf Bestellung 151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.6 EUR
18+ 1.02 EUR
125+ 0.75 EUR
Mindestbestellmenge: 11
TPN2R903PL,L1Q TPN2R903PL_datasheet_en_20191030.pdf?did=55425&prodName=TPN2R903PL
TPN2R903PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.46 EUR
10000+ 0.42 EUR
Mindestbestellmenge: 5000
TPN2R903PL,L1Q TPN2R903PL_datasheet_en_20191030.pdf?did=55425&prodName=TPN2R903PL
TPN2R903PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 37456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.27 EUR
16+ 1.11 EUR
100+ 0.76 EUR
500+ 0.64 EUR
1000+ 0.54 EUR
2000+ 0.48 EUR
Mindestbestellmenge: 14
TPN2R805PL,L1Q docget.jsp?did=53831&prodName=TPN2R805PL
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Produkt ist nicht verfügbar
TRS8A65F,S1Q
TRS8A65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 8A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 28pF @ 650V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.76 EUR
10+ 4.83 EUR
Mindestbestellmenge: 4
TRS8E65F,S1Q TRS8E65F_datasheet_en_20180627.pdf?did=53519&prodName=TRS8E65F
TRS8E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 8A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 28pF @ 650V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.86 EUR
Mindestbestellmenge: 4
HDEPX10GEA51F
HDEPX10GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 16TB SATA NEARLINE 512E
Packaging: Bulk
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+1271.95 EUR
10+ 1253.1 EUR
MQ01ABF032
MQ01ABF032
Hersteller: Toshiba Semiconductor and Storage
Description: 320GB 2.5" SATA III 5V 5.4RPM
Packaging: Bulk
Size / Dimension: 100.45mm x 69.85mm x 9.50mm
Memory Size: 320GB
Type: SATA III
Weight: 3.26 oz (92.89 g)
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V
Form Factor: 2.5"
Part Status: Active
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+105.05 EUR
10+ 95.2 EUR
25+ 91.92 EUR
50+ 88.64 EUR
100+ 87.32 EUR
TC7SZ07FU,LJ(CT TC7SZ07FU_datasheet_en_20170517.pdf?did=54757&prodName=TC7SZ07FU
TC7SZ07FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.089 EUR
6000+ 0.078 EUR
15000+ 0.066 EUR
Mindestbestellmenge: 3000
TC7SZ07FU,LJ(CT TC7SZ07FU_datasheet_en_20170517.pdf?did=54757&prodName=TC7SZ07FU
TC7SZ07FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 5-SSOP
Part Status: Active
auf Bestellung 27412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+0.51 EUR
43+ 0.42 EUR
51+ 0.35 EUR
100+ 0.22 EUR
250+ 0.17 EUR
500+ 0.15 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 35
BAS516,L3F BAS516_datasheet_en_20221219.pdf?did=55427&prodName=BAS516
BAS516,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 100V 250MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.046 EUR
16000+ 0.039 EUR
24000+ 0.036 EUR
Mindestbestellmenge: 8000
BAS516,L3F BAS516_datasheet_en_20221219.pdf?did=55427&prodName=BAS516
BAS516,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 100V 250MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Standard
Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
auf Bestellung 69440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
2000+ 0.049 EUR
Mindestbestellmenge: 63
RN4991FE,LF(CT RN4991FE_datasheet_en_20210818.pdf?did=19063&prodName=RN4991FE
RN4991FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR10KOHM Q1BERI
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.064 EUR
Mindestbestellmenge: 4000
RN4991FE,LF(CT RN4991FE_datasheet_en_20210818.pdf?did=19063&prodName=RN4991FE
RN4991FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + PNP BRT Q1BSR10KOHM Q1BERI
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ES6
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
68+ 0.26 EUR
138+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.064 EUR
Mindestbestellmenge: 46
RN1911,LF(CT docget.jsp?did=18828&prodName=RN1911
RN1911,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.087 EUR
6000+ 0.075 EUR
Mindestbestellmenge: 3000
RN1911,LF(CT docget.jsp?did=18828&prodName=RN1911
RN1911,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
RN4908,LF(CT RN4908_datasheet_en_20210824.pdf?did=18963&prodName=RN4908
RN4908,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.071 EUR
Mindestbestellmenge: 3000
RN4908,LF(CT RN4908_datasheet_en_20210824.pdf?did=18963&prodName=RN4908
RN4908,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNP + NPN BRT Q1BSR10KOHM Q1BER4
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
42+0.42 EUR
61+ 0.29 EUR
124+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.082 EUR
Mindestbestellmenge: 42
RN1707,LF
RN1707,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.079 EUR
6000+ 0.073 EUR
Mindestbestellmenge: 3000
RN1707,LF
RN1707,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 8691 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 38
RN1711,LF
RN1711,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
RN1711,LF
RN1711,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: USV
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 38
RN2702,LF RN2702_datasheet_en_20191024.pdf?did=18900&prodName=RN2702
RN2702,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR PNPX2 BRT Q1BSR10KOHM
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.079 EUR
Mindestbestellmenge: 3000
RN2702,LF RN2702_datasheet_en_20191024.pdf?did=18900&prodName=RN2702
RN2702,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR PNPX2 BRT Q1BSR10KOHM
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
auf Bestellung 5998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 38
RN2708,LF RN2708_datasheet_en_20191029.pdf?did=18903&prodName=RN2708
RN2708,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.079 EUR
Mindestbestellmenge: 3000
RN2708,LF RN2708_datasheet_en_20191029.pdf?did=18903&prodName=RN2708
RN2708,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
38+0.48 EUR
55+ 0.32 EUR
113+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.091 EUR
Mindestbestellmenge: 38
RN2714,LF RN2714_datasheet_en_20191030.pdf?did=6018&prodName=RN2714
RN2714,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Produkt ist nicht verfügbar
RN2714,LF RN2714_datasheet_en_20191030.pdf?did=6018&prodName=RN2714
RN2714,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR1KOHM Q1BER10KOHM
Produkt ist nicht verfügbar
RN1106MFV,L3F(CT docget.jsp?did=5879&prodName=RN1106MFV
RN1106MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
RN1106MFV,L3F(CT docget.jsp?did=5879&prodName=RN1106MFV
RN1106MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 7990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
61+ 0.29 EUR
113+ 0.16 EUR
500+ 0.097 EUR
1000+ 0.066 EUR
2000+ 0.056 EUR
Mindestbestellmenge: 56
TCR3DG13,LF
TCR3DG13,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DG13,LF
TCR3DG13,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.55V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DG135,LF
TCR3DG135,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.53V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR3DG135,LF
TCR3DG135,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 1.35V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.53V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR2DG13,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR2DG13,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.3V 200MA 4WCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSP (0.79x0.79)
Voltage - Output (Min/Fixed): 1.3V
Control Features: Enable
Voltage Dropout (Max): 0.7V @ 100mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
TCR2EE145,LM(CT docget.jsp?did=13794&prodName=TCR2EE145
TCR2EE145,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EE145,LM(CT docget.jsp?did=13794&prodName=TCR2EE145
TCR2EE145,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.45V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 1.45V
Control Features: Enable
PSRR: 73dB (1kHz)
Protection Features: Over Current
Produkt ist nicht verfügbar
TLP731(D4-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GB-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-BL-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(GR,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GB-LF2,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-BL-LF2,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GB-LF4,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 21 42 63 84 105 126 140 141 142 143 144 145 146 147 148 149 150 168 189 210 218  [ Nächste Seite >> ]