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TLP732F(D4-BL-T4,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4GRH-TP5,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4-GB,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4COS-LF2,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4-GR,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4-GB-LF1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TW070J120B,S1Q Toshiba Semiconductor and Storage Description: SICFET N-CH 1200V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
FET Feature: Standard
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5.8V @ 20mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
Produkt ist nicht verfügbar
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74VHC163FT 74VHC163FT Toshiba Semiconductor and Storage 74VHC163FT_datasheet_en_20160818.pdf?did=28787&prodName=74VHC163FT Description: IC BINARY COUNTER 4-BIT 16TSSOP
Number of Bits per Element: 4
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-TSSOPB
Timing: Synchronous
Trigger Type: Positive Edge
Direction: Up
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Synchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74VHC163FT 74VHC163FT Toshiba Semiconductor and Storage 74VHC163FT_datasheet_en_20160818.pdf?did=28787&prodName=74VHC163FT Description: IC BINARY COUNTER 4-BIT 16TSSOP
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Synchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Bits per Element: 4
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-TSSOPB
Timing: Synchronous
Trigger Type: Positive Edge
Direction: Up
Produkt ist nicht verfügbar
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TC78H670FTG,EL TC78H670FTG,EL Toshiba Semiconductor and Storage TC78H670FTG_datasheet_en_20240529.pdf?did=68606&prodName=TC78H670FTG Description: STEPPER MOTOR DRIVER IN 20V, 2.0
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Serial
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Part Status: Active
Produkt ist nicht verfügbar
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TC78H670FTG,EL TC78H670FTG,EL Toshiba Semiconductor and Storage TC78H670FTG_datasheet_en_20240529.pdf?did=68606&prodName=TC78H670FTG Description: STEPPER MOTOR DRIVER IN 20V, 2.0
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Serial
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Part Status: Active
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12+1.89 EUR
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100+1.52 EUR
250+1.43 EUR
500+1.38 EUR
1000+1.36 EUR
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XPH3R206NC,L1XHQ XPH3R206NC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=70022&prodName=XPH3R206NC Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Qualification: AEC-Q101
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XPH3R206NC,L1XHQ XPH3R206NC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=70022&prodName=XPH3R206NC Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Qualification: AEC-Q101
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500+1.57 EUR
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TK170V65Z,LQ TK170V65Z,LQ Toshiba Semiconductor and Storage TK170V65Z_datasheet_en_20190930.pdf?did=67740&prodName=TK170V65Z Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
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2500+3.05 EUR
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TK125V65Z,LQ TK125V65Z,LQ Toshiba Semiconductor and Storage TK125V65Z_datasheet_en_20201016.pdf?did=67738&prodName=TK125V65Z Description: MOSFET N-CH 650V 24A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
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TK125V65Z,LQ TK125V65Z,LQ Toshiba Semiconductor and Storage TK125V65Z_datasheet_en_20201016.pdf?did=67738&prodName=TK125V65Z Description: MOSFET N-CH 650V 24A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 9890 Stücke:
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2+11.21 EUR
10+7.49 EUR
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500+4.91 EUR
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TJ30S06M3L,LXHQ TJ30S06M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=22571&prodName=TJ30S06M3L Description: MOSFET P-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2000+0.86 EUR
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TJ30S06M3L,LXHQ TJ30S06M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=22571&prodName=TJ30S06M3L Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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TCR3UG18A,LF TCR3UG18A,LF Toshiba Semiconductor and Storage docget.jsp?did=59176&prodName=TCR3UG18A Description: IC REG LIN 1.8V 300MA 4-WCSP-F
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.457V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
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5000+0.24 EUR
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TCR3UG18A,LF TCR3UG18A,LF Toshiba Semiconductor and Storage docget.jsp?did=59176&prodName=TCR3UG18A Description: IC REG LIN 1.8V 300MA 4-WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.457V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
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100+0.3 EUR
250+0.27 EUR
500+0.26 EUR
1000+0.25 EUR
2500+0.24 EUR
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TCR3UG33A,LF TCR3UG33A,LF Toshiba Semiconductor and Storage TCR3UG33A_datasheet_en_20240308.pdf?did=59176&prodName=TCR3UG33A Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
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TCR3UG33A,LF TCR3UG33A,LF Toshiba Semiconductor and Storage TCR3UG33A_datasheet_en_20240308.pdf?did=59176&prodName=TCR3UG33A Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
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100+0.48 EUR
250+0.4 EUR
500+0.36 EUR
1000+0.31 EUR
2500+0.27 EUR
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TLP240A(LF1,F TLP240A(LF1,F Toshiba Semiconductor and Storage docget.jsp?did=13992&prodName=TLP240A Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 101 Stücke:
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TB6615PG,8 TB6615PG,8 Toshiba Semiconductor and Storage docget.jsp?did=7287&prodName=TB6615PG Description: STEPPING MOTOR DRIVER IC PB-FREE
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 400mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 0V ~ 26V
Supplier Device Package: 16-DIP
Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
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TBD62381AFWG,EL TBD62381AFWG,EL Toshiba Semiconductor and Storage TBD62381AFNG_datasheet_en_20170324.pdf?did=58145&prodName=TBD62381AFNG Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 18-SOP
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Voltage - Load: 0V ~ 50V
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 8
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1000+2.06 EUR
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TBD62381AFWG,EL TBD62381AFWG,EL Toshiba Semiconductor and Storage TBD62381AFNG_datasheet_en_20170324.pdf?did=58145&prodName=TBD62381AFNG Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Supplier Device Package: 18-SOP
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Voltage - Load: 0V ~ 50V
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 8
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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TCR3UM175A,LF TCR3UM175A,LF Toshiba Semiconductor and Storage docget.jsp?did=63293&prodName=TCR3UM085A Description: IC REG LINEAR 1.75V 300MA 4DFN
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TCR3UM175A,LF TCR3UM175A,LF Toshiba Semiconductor and Storage docget.jsp?did=63293&prodName=TCR3UM085A Description: IC REG LINEAR 1.75V 300MA 4DFN
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TCR5BM11,L3F TCR5BM11,L3F Toshiba Semiconductor and Storage docget.jsp?did=63493&prodName=TCR5BM11 Description: IC REG LINEAR 1.1V 500MA 5DFNB
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TCR5BM11,L3F TCR5BM11,L3F Toshiba Semiconductor and Storage docget.jsp?did=63493&prodName=TCR5BM11 Description: IC REG LINEAR 1.1V 500MA 5DFNB
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SSM5H16TU,LF SSM5H16TU,LF Toshiba Semiconductor and Storage SSM5H16TU_datasheet_en_20140301.pdf?did=1898&prodName=SSM5H16TU Description: MOSFET N-CH 30V 1.9A UFV
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Tape & Reel (TR)
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SSM5H16TU,LF SSM5H16TU,LF Toshiba Semiconductor and Storage SSM5H16TU_datasheet_en_20140301.pdf?did=1898&prodName=SSM5H16TU Description: MOSFET N-CH 30V 1.9A UFV
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
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TJ8S06M3L,LXHQ TJ8S06M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=22588&prodName=TJ8S06M3L Description: MOSFET P-CH 60V 8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TJ8S06M3L,LXHQ TJ8S06M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=22588&prodName=TJ8S06M3L Description: MOSFET P-CH 60V 8A DPAK
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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TJ10S04M3L,LXHQ TJ10S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11298&prodName=TJ10S04M3L Description: MOSFET P-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 3780 Stücke:
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TJ10S04M3L,LXHQ TJ10S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=11298&prodName=TJ10S04M3L Description: MOSFET P-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3780 Stücke:
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CUHS15F30,H3F CUHS15F30,H3F Toshiba Semiconductor and Storage CUHS15F30_datasheet_en_20190831.pdf?did=66021&prodName=CUHS15F30 Description: DIODE SCHOTTKY 30V 1.5A US2H
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
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CUHS15F30,H3F CUHS15F30,H3F Toshiba Semiconductor and Storage CUHS15F30_datasheet_en_20190831.pdf?did=66021&prodName=CUHS15F30 Description: DIODE SCHOTTKY 30V 1.5A US2H
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
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XPW6R30ANB,L1XHQ XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 45A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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XPW6R30ANB,L1XHQ XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 45A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 5312 Stücke:
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100+2.33 EUR
500+1.88 EUR
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XPH6R30ANB,L1XHQ XPH6R30ANB,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68578&prodName=XPH6R30ANB Description: MOSFET N-CH 100V 45A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XPH6R30ANB,L1XHQ XPH6R30ANB,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68578&prodName=XPH6R30ANB Description: MOSFET N-CH 100V 45A 8SOP
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
auf Bestellung 8924 Stücke:
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100+2.2 EUR
500+1.76 EUR
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TK40S06N1L,LXHQ TK40S06N1L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=30110&prodName=TK40S06N1L Description: MOSFET N-CH 60V 40A DPAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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TK40S06N1L,LXHQ TK40S06N1L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=30110&prodName=TK40S06N1L Description: MOSFET N-CH 60V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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500+0.98 EUR
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2SC5886A,L1XHQ(O Toshiba Semiconductor and Storage 2SC5886A_datasheet_en_20131101.pdf?did=4354&prodName=2SC5886A Description: TRANSISTOR NPN BIPO PWMOLD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPCC8105,L1Q(CM TPCC8105,L1Q(CM Toshiba Semiconductor and Storage Description: MOSFET P-CH 30V 23A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP2761(D4-LF4,E Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
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TLP2761(D4-TP4,E TLP2761(D4-TP4,E Toshiba Semiconductor and Storage docget.jsp?did=28819&prodName=TLP2761 Description: OPTOISOLTR 5KV 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP2761(LF4,E TLP2761(LF4,E Toshiba Semiconductor and Storage docget.jsp?did=28819&prodName=TLP2761 Description: OPTOISOLTR 5KV 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2761(TP4,E TLP2761(TP4,E Toshiba Semiconductor and Storage docget.jsp?did=28819&prodName=TLP2761 Description: OPTOISOLTR 5KV 6-SO
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Produkt ist nicht verfügbar
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TCR2LE31,LM TCR2LE31,LM Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE31 Description: IC REG LINEAR 3.1V 200MA ESV
Produkt ist nicht verfügbar
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TCR2LE31,LM TCR2LE31,LM Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE31 Description: IC REG LINEAR 3.1V 200MA ESV
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XPN12006NC,L1XHQ XPN12006NC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68672&prodName=XPN12006NC Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
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5000+0.86 EUR
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XPN12006NC,L1XHQ XPN12006NC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68672&prodName=XPN12006NC Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
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TLP750F(D4-TP4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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CUHS15S40,H3F CUHS15S40,H3F Toshiba Semiconductor and Storage CUHS15S40_datasheet_en_20190905.pdf?did=66025&prodName=CUHS15S40 Description: DIODE SCHOTTKY 40V 1.5A US2H
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
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CUHS15S40,H3F CUHS15S40,H3F Toshiba Semiconductor and Storage CUHS15S40_datasheet_en_20190905.pdf?did=66025&prodName=CUHS15S40 Description: DIODE SCHOTTKY 40V 1.5A US2H
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
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TC7WU04FK,LF TC7WU04FK,LF Toshiba Semiconductor and Storage docget.jsp?did=20208&prodName=TC7WU04FK Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
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CLS10F40,L3F CLS10F40,L3F Toshiba Semiconductor and Storage docget.jsp?did=63451&prodName=CLS10F40 Description: DIODE SCHOTTKY 40V 1A CL2E
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CL2E
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
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TLP732F(D4-BL-T4,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4GRH-TP5,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4-GB,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4COS-LF2,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4-GR,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP732(D4-GB-LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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TW070J120B,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: SICFET N-CH 1200V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
FET Feature: Standard
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 5.8V @ 20mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
Produkt ist nicht verfügbar
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74VHC163FT 74VHC163FT_datasheet_en_20160818.pdf?did=28787&prodName=74VHC163FT
74VHC163FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Number of Bits per Element: 4
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-TSSOPB
Timing: Synchronous
Trigger Type: Positive Edge
Direction: Up
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Synchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74VHC163FT 74VHC163FT_datasheet_en_20160818.pdf?did=28787&prodName=74VHC163FT
74VHC163FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 4-BIT 16TSSOP
Operating Temperature: -40°C ~ 125°C (TA)
Reset: Synchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Bits per Element: 4
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-TSSOPB
Timing: Synchronous
Trigger Type: Positive Edge
Direction: Up
Produkt ist nicht verfügbar
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TC78H670FTG,EL TC78H670FTG_datasheet_en_20240529.pdf?did=68606&prodName=TC78H670FTG
TC78H670FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IN 20V, 2.0
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Serial
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Part Status: Active
Produkt ist nicht verfügbar
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TC78H670FTG,EL TC78H670FTG_datasheet_en_20240529.pdf?did=68606&prodName=TC78H670FTG
TC78H670FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPER MOTOR DRIVER IN 20V, 2.0
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Serial
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-VQFN (3x3)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2
Part Status: Active
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XPH3R206NC,L1XHQ docget.jsp?did=70022&prodName=XPH3R206NC
XPH3R206NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Qualification: AEC-Q101
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5000+1.27 EUR
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XPH3R206NC,L1XHQ docget.jsp?did=70022&prodName=XPH3R206NC
XPH3R206NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 70A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 35A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 10 V
Qualification: AEC-Q101
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6+3.62 EUR
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TK170V65Z,LQ TK170V65Z_datasheet_en_20190930.pdf?did=67740&prodName=TK170V65Z
TK170V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
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2500+3.05 EUR
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TK125V65Z,LQ TK125V65Z_datasheet_en_20201016.pdf?did=67738&prodName=TK125V65Z
TK125V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 24A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
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TK125V65Z,LQ TK125V65Z_datasheet_en_20201016.pdf?did=67738&prodName=TK125V65Z
TK125V65Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 24A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
auf Bestellung 9890 Stücke:
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TJ30S06M3L,LXHQ docget.jsp?did=22571&prodName=TJ30S06M3L
TJ30S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2000+0.86 EUR
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TJ30S06M3L,LXHQ docget.jsp?did=22571&prodName=TJ30S06M3L
TJ30S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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TCR3UG18A,LF docget.jsp?did=59176&prodName=TCR3UG18A
TCR3UG18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LIN 1.8V 300MA 4-WCSP-F
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.457V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
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5000+0.24 EUR
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TCR3UG18A,LF docget.jsp?did=59176&prodName=TCR3UG18A
TCR3UG18A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LIN 1.8V 300MA 4-WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.457V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 33728 Stücke:
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38+0.57 EUR
53+0.39 EUR
60+0.35 EUR
100+0.3 EUR
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TCR3UG33A,LF TCR3UG33A_datasheet_en_20240308.pdf?did=59176&prodName=TCR3UG33A
TCR3UG33A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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10000+0.23 EUR
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TCR3UG33A,LF TCR3UG33A_datasheet_en_20240308.pdf?did=59176&prodName=TCR3UG33A
TCR3UG33A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA 4WCSP-F
Protection Features: Inrush Current, Over Current, Thermal Shutdown
Voltage Dropout (Max): 0.273V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 4-WCSP-F (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 680 nA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 17107 Stücke:
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17+1.26 EUR
28+0.76 EUR
34+0.63 EUR
100+0.48 EUR
250+0.4 EUR
500+0.36 EUR
1000+0.31 EUR
2500+0.27 EUR
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TLP240A(LF1,F docget.jsp?did=13992&prodName=TLP240A
TLP240A(LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 500MA 0-60V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 500 mA
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 2 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: CQC, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 101 Stücke:
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8+2.7 EUR
10+2.39 EUR
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TB6615PG,8 docget.jsp?did=7287&prodName=TB6615PG
TB6615PG,8
Hersteller: Toshiba Semiconductor and Storage
Description: STEPPING MOTOR DRIVER IC PB-FREE
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 400mA
Operating Temperature: -30°C ~ 85°C
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 0V ~ 26V
Supplier Device Package: 16-DIP
Motor Type - Stepper: Unipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
auf Bestellung 187 Stücke:
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TBD62381AFWG,EL TBD62381AFNG_datasheet_en_20170324.pdf?did=58145&prodName=TBD62381AFNG
TBD62381AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 18-SOP
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Voltage - Load: 0V ~ 50V
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 8
auf Bestellung 1000 Stücke:
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1000+2.06 EUR
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TBD62381AFWG,EL TBD62381AFNG_datasheet_en_20170324.pdf?did=58145&prodName=TBD62381AFNG
TBD62381AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 18SOP
Supplier Device Package: 18-SOP
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Voltage - Load: 0V ~ 50V
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 8
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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TCR3UM175A,LF docget.jsp?did=63293&prodName=TCR3UM085A
TCR3UM175A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.75V 300MA 4DFN
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TCR3UM175A,LF docget.jsp?did=63293&prodName=TCR3UM085A
TCR3UM175A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.75V 300MA 4DFN
auf Bestellung 19860 Stücke:
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TCR5BM11,L3F docget.jsp?did=63493&prodName=TCR5BM11
TCR5BM11,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5BM11,L3F docget.jsp?did=63493&prodName=TCR5BM11
TCR5BM11,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
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SSM5H16TU,LF SSM5H16TU_datasheet_en_20140301.pdf?did=1898&prodName=SSM5H16TU
SSM5H16TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.25 EUR
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SSM5H16TU,LF SSM5H16TU_datasheet_en_20140301.pdf?did=1898&prodName=SSM5H16TU
SSM5H16TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 1.9A UFV
Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Supplier Device Package: UFV
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 500mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 6473 Stücke:
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18+1.18 EUR
29+0.73 EUR
100+0.46 EUR
500+0.35 EUR
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TJ8S06M3L,LXHQ docget.jsp?did=22588&prodName=TJ8S06M3L
TJ8S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TJ8S06M3L,LXHQ docget.jsp?did=22588&prodName=TJ8S06M3L
TJ8S06M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 8A DPAK
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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TJ10S04M3L,LXHQ docget.jsp?did=11298&prodName=TJ10S04M3L
TJ10S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 3780 Stücke:
Lieferzeit 10-14 Tag (e)
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2000+0.71 EUR
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TJ10S04M3L,LXHQ docget.jsp?did=11298&prodName=TJ10S04M3L
TJ10S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 10A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3780 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.62 EUR
13+1.65 EUR
100+1.09 EUR
500+0.84 EUR
1000+0.77 EUR
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CUHS15F30,H3F CUHS15F30_datasheet_en_20190831.pdf?did=66021&prodName=CUHS15F30
CUHS15F30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.15 EUR
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CUHS15F30,H3F CUHS15F30_datasheet_en_20190831.pdf?did=66021&prodName=CUHS15F30
CUHS15F30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 1.5A US2H
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 8650 Stücke:
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24+0.88 EUR
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500+0.26 EUR
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XPW6R30ANB,L1XHQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
XPW6R30ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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5000+1.59 EUR
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XPW6R30ANB,L1XHQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
XPW6R30ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 5312 Stücke:
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AnzahlPrivatkunde
4+5.26 EUR
10+3.39 EUR
100+2.33 EUR
500+1.88 EUR
1000+1.73 EUR
2000+1.61 EUR
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XPH6R30ANB,L1XHQ docget.jsp?did=68578&prodName=XPH6R30ANB
XPH6R30ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XPH6R30ANB,L1XHQ docget.jsp?did=68578&prodName=XPH6R30ANB
XPH6R30ANB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8SOP
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
auf Bestellung 8924 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
10+3.21 EUR
100+2.2 EUR
500+1.76 EUR
1000+1.63 EUR
2000+1.51 EUR
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TK40S06N1L,LXHQ docget.jsp?did=30110&prodName=TK40S06N1L
TK40S06N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
2000+0.8 EUR
4000+0.74 EUR
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TK40S06N1L,LXHQ docget.jsp?did=30110&prodName=TK40S06N1L
TK40S06N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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10+2.28 EUR
14+1.58 EUR
100+1.23 EUR
500+0.98 EUR
1000+0.89 EUR
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2SC5886A,L1XHQ(O 2SC5886A_datasheet_en_20131101.pdf?did=4354&prodName=2SC5886A
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN BIPO PWMOLD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPCC8105,L1Q(CM
TPCC8105,L1Q(CM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 23A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 500µA
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP2761(D4-LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Produkt ist nicht verfügbar
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TLP2761(D4-TP4,E docget.jsp?did=28819&prodName=TLP2761
TLP2761(D4-TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLP2761(LF4,E docget.jsp?did=28819&prodName=TLP2761
TLP2761(LF4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 6-SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2761(TP4,E docget.jsp?did=28819&prodName=TLP2761
TLP2761(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV 6-SO
Data Rate: 15MBd
Voltage - Forward (Vf) (Typ): 1.5V
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 3ns, 3ns
Supplier Device Package: 6-SO
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 10mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Produkt ist nicht verfügbar
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TCR2LE31,LM docget.jsp?did=28807&prodName=TCR2LE31
TCR2LE31,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.1V 200MA ESV
Produkt ist nicht verfügbar
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TCR2LE31,LM docget.jsp?did=28807&prodName=TCR2LE31
TCR2LE31,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.1V 200MA ESV
auf Bestellung 5941 Stücke:
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XPN12006NC,L1XHQ docget.jsp?did=68672&prodName=XPN12006NC
XPN12006NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
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5000+0.86 EUR
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XPN12006NC,L1XHQ docget.jsp?did=68672&prodName=XPN12006NC
XPN12006NC,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 9372 Stücke:
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7+3.33 EUR
12+1.78 EUR
100+1.26 EUR
500+1.08 EUR
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TLP750F(D4-TP4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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CUHS15S40,H3F CUHS15S40_datasheet_en_20190905.pdf?did=66025&prodName=CUHS15S40
CUHS15S40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A US2H
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
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CUHS15S40,H3F CUHS15S40_datasheet_en_20190905.pdf?did=66025&prodName=CUHS15S40
CUHS15S40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A US2H
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: US2H
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Packaging: Cut Tape (CT)
auf Bestellung 5741 Stücke:
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24+0.88 EUR
34+0.62 EUR
100+0.31 EUR
500+0.26 EUR
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TC7WU04FK,LF docget.jsp?did=20208&prodName=TC7WU04FK
TC7WU04FK,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
auf Bestellung 15000 Stücke:
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3000+0.19 EUR
6000+0.18 EUR
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CLS10F40,L3F docget.jsp?did=63451&prodName=CLS10F40
CLS10F40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CL2E
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CL2E
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 40 V
auf Bestellung 30000 Stücke:
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10000+0.25 EUR
30000+0.23 EUR
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