Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13441) > Seite 146 nach 225

Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 141 142 143 144 145 146 147 148 149 150 151 154 176 198 220 225  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TLP2372(V4-TPL,E TLP2372(V4-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=68833&prodName=TLP2372 Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 3359 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
10+2.03 EUR
100+1.54 EUR
500+1.32 EUR
1000+1.25 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
2SK3074TE12LF 2SK3074TE12LF Toshiba Semiconductor and Storage docget.jsp?did=17914&prodName=2SK3074 Description: MOSF RF N CH 30V 1A PW-MINI
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74VHC9164FT 74VHC9164FT Toshiba Semiconductor and Storage docget.jsp?did=15655&prodName=74VHC9164FT Description: X34 PB-F 8-BIT SHIFT REGISTER (P
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Number of Bits per Element: 8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.2 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
74VHC9164FT 74VHC9164FT Toshiba Semiconductor and Storage docget.jsp?did=15655&prodName=74VHC9164FT Description: X34 PB-F 8-BIT SHIFT REGISTER (P
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Number of Bits per Element: 8
auf Bestellung 4550 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
32+0.57 EUR
38+0.47 EUR
100+0.35 EUR
250+0.29 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R104PB,L1XHQ TPH1R104PB,L1XHQ Toshiba Semiconductor and Storage TPH1R104PB_datasheet_en_20200624.pdf?did=60946&prodName=TPH1R104PB Description: MOSFET N-CH 40V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.28 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R104PB,L1XHQ TPH1R104PB,L1XHQ Toshiba Semiconductor and Storage TPH1R104PB_datasheet_en_20200624.pdf?did=60946&prodName=TPH1R104PB Description: MOSFET N-CH 40V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5098 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.28 EUR
10+2.37 EUR
100+1.61 EUR
500+1.56 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R204PB,L1Q TPH1R204PB,L1Q Toshiba Semiconductor and Storage docget.jsp?did=57107&prodName=TPH1R204PB Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.84 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R204PB,L1Q TPH1R204PB,L1Q Toshiba Semiconductor and Storage docget.jsp?did=57107&prodName=TPH1R204PB Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
auf Bestellung 32899 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+1.9 EUR
100+1.29 EUR
500+1.08 EUR
1000+1.02 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TRS20N65FB,S1F(S TRS20N65FB,S1F(S Toshiba Semiconductor and Storage Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP183(BL-TPR,E TLP183(BL-TPR,E Toshiba Semiconductor and Storage Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP523-2(SANYD,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP750(D4-SANYD,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP523-4(SANYD,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP781F(D4ADGBT7,F Toshiba Semiconductor and Storage TLP781(F).pdf Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPCP8107,LF TPCP8107,LF Toshiba Semiconductor and Storage datasheet_en_20160223.pdf?did=13672 Description: MOSFET P-CH 40V 8A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PS-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP3320(TP15,F TLP3320(TP15,F Toshiba Semiconductor and Storage TLP3320_datasheet_en_20230620.pdf?did=14605&prodName=TLP3320 Description: SSR RELAY SPST-NO 100MA 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Load Current: 100 mA
Approval Agency: UL
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 14 Ohms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+2.87 EUR
3000+2.76 EUR
4500+2.71 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
TLP3320(TP15,F TLP3320(TP15,F Toshiba Semiconductor and Storage TLP3320_datasheet_en_20230620.pdf?did=14605&prodName=TLP3320 Description: SSR RELAY SPST-NO 100MA 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Load Current: 100 mA
Approval Agency: UL
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 14 Ohms
auf Bestellung 6638 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.04 EUR
10+4.44 EUR
100+3.49 EUR
500+3.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TRS2E65F,S1Q TRS2E65F,S1Q Toshiba Semiconductor and Storage TRS3E65FProductNewsen20171101.pdf Description: DIODE SIL CARB 650V 2A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
50+1.42 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TRS3E65F,S1Q TRS3E65F,S1Q Toshiba Semiconductor and Storage TRS3E65FProductNewsen20171101.pdf Description: DIODE SIL CARB 650V 3A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 650V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS4E65F,S1Q TRS4E65F,S1Q Toshiba Semiconductor and Storage datasheet_en_20180627.pdf?did=53515 Description: DIODE SIL CARB 650V 4A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 650V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS6E65F,S1Q TRS6E65F,S1Q Toshiba Semiconductor and Storage TRS6E65F_datasheet_en_20180627.pdf?did=53517&prodName=TRS6E65F Description: DIODE SIL CARB 650V 6A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS10E65F,S1Q TRS10E65F,S1Q Toshiba Semiconductor and Storage TRS10E65F_datasheet_en_20180627.pdf?did=53513&prodName=TRS10E65F Description: DIODE SIL CARB 650V 10A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 650V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS12E65F,S1Q TRS12E65F,S1Q Toshiba Semiconductor and Storage Description: DIODE SIL CARB 650V 12A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 65pF @ 650V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP785F(Y-LF7,F TLP785F(Y-LF7,F Toshiba Semiconductor and Storage TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F Description: PHOTOCOUPLER TRANS OUT
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SH08FU,LJ(CT TC7SH08FU,LJ(CT Toshiba Semiconductor and Storage TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.06 EUR
6000+0.058 EUR
9000+0.057 EUR
15000+0.056 EUR
21000+0.055 EUR
30000+0.054 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TC7SH08FU,LJ(CT TC7SH08FU,LJ(CT Toshiba Semiconductor and Storage TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 40274 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
157+0.11 EUR
180+0.098 EUR
213+0.083 EUR
250+0.075 EUR
500+0.071 EUR
1000+0.067 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
TC7S08F,LF TC7S08F,LF Toshiba Semiconductor and Storage docget.jsp?did=20179&prodName=TC7S08F Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.095 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TC7S08F,LF TC7S08F,LF Toshiba Semiconductor and Storage docget.jsp?did=20179&prodName=TC7S08F Description: IC GATE AND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 6786 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
104+0.17 EUR
118+0.15 EUR
139+0.13 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N951L,EFF SSM6N951L,EFF Toshiba Semiconductor and Storage catalog20200115.pdf Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N951L,EFF SSM6N951L,EFF Toshiba Semiconductor and Storage catalog20200115.pdf Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R104PB,L1XHQ TPW1R104PB,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=62007&prodName=TPW1R104PB Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.97 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R104PB,L1XHQ TPW1R104PB,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=62007&prodName=TPW1R104PB Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9374 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.06 EUR
11+1.75 EUR
100+1.38 EUR
500+1.2 EUR
1000+1.17 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPHR7904PB,L1XHQ TPHR7904PB,L1XHQ Toshiba Semiconductor and Storage TPHR7904PB_datasheet_en_20200624.pdf?did=60944&prodName=TPHR7904PB Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.92 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPHR7904PB,L1XHQ TPHR7904PB,L1XHQ Toshiba Semiconductor and Storage TPHR7904PB_datasheet_en_20200624.pdf?did=60944&prodName=TPHR7904PB Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13720 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.74 EUR
10+3.75 EUR
100+2.62 EUR
500+2.13 EUR
1000+1.98 EUR
2000+1.92 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TPWR7904PB,L1XHQ TPWR7904PB,L1XHQ Toshiba Semiconductor and Storage TPWR7904PB_datasheet_en_20200624.pdf?did=62009&prodName=TPWR7904PB Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.37 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPWR7904PB,L1XHQ TPWR7904PB,L1XHQ Toshiba Semiconductor and Storage TPWR7904PB_datasheet_en_20200624.pdf?did=62009&prodName=TPWR7904PB Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6809 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.51 EUR
10+2.9 EUR
100+2 EUR
500+1.61 EUR
1000+1.48 EUR
2000+1.38 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N67NU,LF SSM6N67NU,LF Toshiba Semiconductor and Storage docget.jsp?did=60461&prodName=SSM6N67NU Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
6000+0.19 EUR
9000+0.17 EUR
21000+0.16 EUR
30000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N67NU,LF SSM6N67NU,LF Toshiba Semiconductor and Storage docget.jsp?did=60461&prodName=SSM6N67NU Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 32450 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
31+0.57 EUR
100+0.36 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N17FU(TE85L,F) SSM6N17FU(TE85L,F) Toshiba Semiconductor and Storage SSM6N17FU_datasheet_en_20140301.pdf?did=19758&prodName=SSM6N17FU Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N17FU(TE85L,F) SSM6N17FU(TE85L,F) Toshiba Semiconductor and Storage SSM6N17FU_datasheet_en_20140301.pdf?did=19758&prodName=SSM6N17FU Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N36TU,LF SSM6N36TU,LF Toshiba Semiconductor and Storage Description: MOSFET 2N-CH 20V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N36TU,LF SSM6N36TU,LF Toshiba Semiconductor and Storage Description: MOSFET 2N-CH 20V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 11607 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
39+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N24TU,LF SSM6N24TU,LF Toshiba Semiconductor and Storage SSM6N24TU_datasheet_en_20140301.pdf?did=22360&prodName=SSM6N24TU Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N24TU,LF SSM6N24TU,LF Toshiba Semiconductor and Storage SSM6N24TU_datasheet_en_20140301.pdf?did=22360&prodName=SSM6N24TU Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
32+0.56 EUR
100+0.34 EUR
500+0.31 EUR
1000+0.21 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
TRS4A65F,S1Q TRS4A65F,S1Q Toshiba Semiconductor and Storage Description: PB-F DIODE TO-220-2L V=650 IF=4A
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TB9052FNG(EL) Toshiba Semiconductor and Storage docget.jsp?did=15592&prodName=TB9052FNG Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB9052FNG(EL) Toshiba Semiconductor and Storage docget.jsp?did=15592&prodName=TB9052FNG Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H660FNG,EL TC78H660FNG,EL Toshiba Semiconductor and Storage TC78H660FNG_datasheet_en_20200908.pdf?did=69605&prodName=TC78H660FNG Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H660FNG,EL TC78H660FNG,EL Toshiba Semiconductor and Storage TC78H660FNG_datasheet_en_20200908.pdf?did=69605&prodName=TC78H660FNG Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 583 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
15+1.19 EUR
25+1.08 EUR
100+0.95 EUR
250+0.89 EUR
500+0.86 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-GR,LF TTC1949-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=61219&prodName=TTC1949 Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-GR,LF TTC1949-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=61219&prodName=TTC1949 Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 5996 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-Y,LF TTC1949-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=61219&prodName=TTC1949 Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-Y,LF TTC1949-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=61219&prodName=TTC1949 Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN2707,LF RN2707,LF Toshiba Semiconductor and Storage RN2707_datasheet_en_20191029.pdf?did=18903&prodName=RN2707 Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2707,LF RN2707,LF Toshiba Semiconductor and Storage RN2707_datasheet_en_20191029.pdf?did=18903&prodName=RN2707 Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE(TE85L,F) Toshiba Semiconductor and Storage RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE(TE85L,F) Toshiba Semiconductor and Storage RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
TK155A65Z,S4X TK155A65Z,S4X Toshiba Semiconductor and Storage docget.jsp?did=67744&prodName=TK155A65Z Description: MOSFET N-CH 650V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.92 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK200F04N1L,LXGQ TK200F04N1L,LXGQ Toshiba Semiconductor and Storage docget.jsp?did=15454&prodName=TK200F04N1L Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK200F04N1L,LXGQ TK200F04N1L,LXGQ Toshiba Semiconductor and Storage docget.jsp?did=15454&prodName=TK200F04N1L Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.25 EUR
10+4.24 EUR
100+3.18 EUR
500+2.94 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLP2372(V4-TPL,E docget.jsp?did=68833&prodName=TLP2372
TLP2372(V4-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
auf Bestellung 3359 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+2.03 EUR
100+1.54 EUR
500+1.32 EUR
1000+1.25 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
2SK3074TE12LF docget.jsp?did=17914&prodName=2SK3074
2SK3074TE12LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSF RF N CH 30V 1A PW-MINI
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74VHC9164FT docget.jsp?did=15655&prodName=74VHC9164FT
74VHC9164FT
Hersteller: Toshiba Semiconductor and Storage
Description: X34 PB-F 8-BIT SHIFT REGISTER (P
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Number of Bits per Element: 8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.2 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
74VHC9164FT docget.jsp?did=15655&prodName=74VHC9164FT
74VHC9164FT
Hersteller: Toshiba Semiconductor and Storage
Description: X34 PB-F 8-BIT SHIFT REGISTER (P
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 16-TSSOPB
Number of Bits per Element: 8
auf Bestellung 4550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
32+0.57 EUR
38+0.47 EUR
100+0.35 EUR
250+0.29 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R104PB,L1XHQ TPH1R104PB_datasheet_en_20200624.pdf?did=60946&prodName=TPH1R104PB
TPH1R104PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.28 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R104PB,L1XHQ TPH1R104PB_datasheet_en_20200624.pdf?did=60946&prodName=TPH1R104PB
TPH1R104PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+2.37 EUR
100+1.61 EUR
500+1.56 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R204PB,L1Q docget.jsp?did=57107&prodName=TPH1R204PB
TPH1R204PB,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.84 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPH1R204PB,L1Q docget.jsp?did=57107&prodName=TPH1R204PB
TPH1R204PB,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5855 pF @ 20 V
auf Bestellung 32899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+1.9 EUR
100+1.29 EUR
500+1.08 EUR
1000+1.02 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TRS20N65FB,S1F(S
TRS20N65FB,S1F(S
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 10A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP183(BL-TPR,E
TLP183(BL-TPR,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOCOUPLER TRANS
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP523-2(SANYD,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP750(D4-SANYD,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP523-4(SANYD,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP781F(D4ADGBT7,F TLP781(F).pdf
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPCP8107,LF datasheet_en_20160223.pdf?did=13672
TPCP8107,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 8A PS-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PS-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP3320(TP15,F TLP3320_datasheet_en_20230620.pdf?did=14605&prodName=TLP3320
TLP3320(TP15,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 100MA 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Load Current: 100 mA
Approval Agency: UL
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 14 Ohms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+2.87 EUR
3000+2.76 EUR
4500+2.71 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
TLP3320(TP15,F TLP3320_datasheet_en_20230620.pdf?did=14605&prodName=TLP3320
TLP3320(TP15,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 100MA 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.128", 3.25mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.15VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: SMD (SMT) Tab
Load Current: 100 mA
Approval Agency: UL
Supplier Device Package: 4-USOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 14 Ohms
auf Bestellung 6638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+4.44 EUR
100+3.49 EUR
500+3.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TRS2E65F,S1Q TRS3E65FProductNewsen20171101.pdf
TRS2E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 2A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 8.7pF @ 650V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
50+1.42 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TRS3E65F,S1Q TRS3E65FProductNewsen20171101.pdf
TRS3E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 3A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 12pF @ 650V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS4E65F,S1Q datasheet_en_20180627.pdf?did=53515
TRS4E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 4A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 16pF @ 650V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS6E65F,S1Q TRS6E65F_datasheet_en_20180627.pdf?did=53517&prodName=TRS6E65F
TRS6E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 6A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS10E65F,S1Q TRS10E65F_datasheet_en_20180627.pdf?did=53513&prodName=TRS10E65F
TRS10E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 10A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 650V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS12E65F,S1Q
TRS12E65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 12A TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 65pF @ 650V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLP785F(Y-LF7,F TLP785F_datasheet_en_20190311.pdf?did=10569&prodName=TLP785F
TLP785F(Y-LF7,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER TRANS OUT
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SH08FU,LJ(CT TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU
TC7SH08FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.058 EUR
9000+0.057 EUR
15000+0.056 EUR
21000+0.055 EUR
30000+0.054 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TC7SH08FU,LJ(CT TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU
TC7SH08FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 40274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
157+0.11 EUR
180+0.098 EUR
213+0.083 EUR
250+0.075 EUR
500+0.071 EUR
1000+0.067 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
TC7S08F,LF docget.jsp?did=20179&prodName=TC7S08F
TC7S08F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.095 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TC7S08F,LF docget.jsp?did=20179&prodName=TC7S08F
TC7S08F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 6786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
104+0.17 EUR
118+0.15 EUR
139+0.13 EUR
250+0.12 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N951L,EFF catalog20200115.pdf
SSM6N951L,EFF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N951L,EFF catalog20200115.pdf
SSM6N951L,EFF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 12V 8A 6TCSPA
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
Supplier Device Package: 6-TCSPA (2.14x1.67)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R104PB,L1XHQ docget.jsp?did=62007&prodName=TPW1R104PB
TPW1R104PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.97 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPW1R104PB,L1XHQ docget.jsp?did=62007&prodName=TPW1R104PB
TPW1R104PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 120A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
11+1.75 EUR
100+1.38 EUR
500+1.2 EUR
1000+1.17 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPHR7904PB,L1XHQ TPHR7904PB_datasheet_en_20200624.pdf?did=60944&prodName=TPHR7904PB
TPHR7904PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.92 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPHR7904PB,L1XHQ TPHR7904PB_datasheet_en_20200624.pdf?did=60944&prodName=TPHR7904PB
TPHR7904PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.74 EUR
10+3.75 EUR
100+2.62 EUR
500+2.13 EUR
1000+1.98 EUR
2000+1.92 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TPWR7904PB,L1XHQ TPWR7904PB_datasheet_en_20200624.pdf?did=62009&prodName=TPWR7904PB
TPWR7904PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.37 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPWR7904PB,L1XHQ TPWR7904PB_datasheet_en_20200624.pdf?did=62009&prodName=TPWR7904PB
TPWR7904PB,L1XHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 75A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
10+2.9 EUR
100+2 EUR
500+1.61 EUR
1000+1.48 EUR
2000+1.38 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N67NU,LF docget.jsp?did=60461&prodName=SSM6N67NU
SSM6N67NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
6000+0.19 EUR
9000+0.17 EUR
21000+0.16 EUR
30000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N67NU,LF docget.jsp?did=60461&prodName=SSM6N67NU
SSM6N67NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-µDFN (2x2)
Part Status: Active
auf Bestellung 32450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
31+0.57 EUR
100+0.36 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N17FU(TE85L,F) SSM6N17FU_datasheet_en_20140301.pdf?did=19758&prodName=SSM6N17FU
SSM6N17FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N17FU(TE85L,F) SSM6N17FU_datasheet_en_20140301.pdf?did=19758&prodName=SSM6N17FU
SSM6N17FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: X34 SMALL LOW RON DUAL NCH MOSFE
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Rds On (Max) @ Id, Vgs: 20Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N36TU,LF
SSM6N36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.16 EUR
6000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N36TU,LF
SSM6N36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
auf Bestellung 11607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
39+0.45 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.17 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N24TU,LF SSM6N24TU_datasheet_en_20140301.pdf?did=22360&prodName=SSM6N24TU
SSM6N24TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6N24TU,LF SSM6N24TU_datasheet_en_20140301.pdf?did=22360&prodName=SSM6N24TU
SSM6N24TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: UF6
auf Bestellung 5700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
32+0.56 EUR
100+0.34 EUR
500+0.31 EUR
1000+0.21 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
TRS4A65F,S1Q
TRS4A65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F DIODE TO-220-2L V=650 IF=4A
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TB9052FNG(EL) docget.jsp?did=15592&prodName=TB9052FNG
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TB9052FNG(EL) docget.jsp?did=15592&prodName=TB9052FNG
Hersteller: Toshiba Semiconductor and Storage
Description: AUTOMOTIVE H-BRIDGE DRIVER
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 100mA
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 18V
Technology: Bi-CMOS
Supplier Device Package: 48-HTSSOP
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H660FNG,EL TC78H660FNG_datasheet_en_20200908.pdf?did=69605&prodName=TC78H660FNG
TC78H660FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC78H660FNG,EL TC78H660FNG_datasheet_en_20200908.pdf?did=69605&prodName=TC78H660FNG
TC78H660FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: 2CH BRUSHED MOTOR DRIVER 18V/2A
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.5V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 2.5V ~ 16V
Supplier Device Package: 16-TSSOP
Motor Type - AC, DC: Brushed DC
Part Status: Active
auf Bestellung 583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
15+1.19 EUR
25+1.08 EUR
100+0.95 EUR
250+0.89 EUR
500+0.86 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-GR,LF docget.jsp?did=61219&prodName=TTC1949
TTC1949-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-GR,LF docget.jsp?did=61219&prodName=TTC1949
TTC1949-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 5996 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-Y,LF docget.jsp?did=61219&prodName=TTC1949
TTC1949-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TTC1949-Y,LF docget.jsp?did=61219&prodName=TTC1949
TTC1949-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN TRANSISTOR VCEO50V IC0.5A HF
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN2707,LF RN2707_datasheet_en_20191029.pdf?did=18903&prodName=RN2707
RN2707,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2707,LF RN2707_datasheet_en_20191029.pdf?did=18903&prodName=RN2707
RN2707,LF
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR10KOHM Q1BER47KOH
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
73+0.24 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE
RN1711JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1711JE(TE85L,F) RN1711JE_datasheet_en_20140301.pdf?did=19128&prodName=RN1711JE
RN1711JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANSISTOR NPN X2 BRT Q1BSR10KOH
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
TK155A65Z,S4X docget.jsp?did=67744&prodName=TK155A65Z
TK155A65Z,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 18A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 730µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.92 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK200F04N1L,LXGQ docget.jsp?did=15454&prodName=TK200F04N1L
TK200F04N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK200F04N1L,LXGQ docget.jsp?did=15454&prodName=TK200F04N1L
TK200F04N1L,LXGQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 200A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14920 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.25 EUR
10+4.24 EUR
100+3.18 EUR
500+2.94 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 22 44 66 88 110 132 141 142 143 144 145 146 147 148 149 150 151 154 176 198 220 225  [ Nächste Seite >> ]