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TLP731(GB-LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GR-TP1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GB,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(GR-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GR-LF1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GB-LF1,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(GB-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-LF4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(BL-LF2,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(GB,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4GRL-LF2,F Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
RN1310,LF Toshiba Semiconductor and Storage docget.jsp?did=18781&prodName=RN1310 Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1310,LF Toshiba Semiconductor and Storage docget.jsp?did=18781&prodName=RN1310 Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1311,LF Toshiba Semiconductor and Storage docget.jsp?did=18781&prodName=RN1310 Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
DF2S16CT,L3F DF2S16CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=888&prodName=DF2S16CT Description: TVS DIODE 12VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.044 EUR
Mindestbestellmenge: 10000
DF2S16CT,L3F DF2S16CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=888&prodName=DF2S16CT Description: TVS DIODE 12VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
61+ 0.29 EUR
112+ 0.16 EUR
500+ 0.097 EUR
1000+ 0.066 EUR
2000+ 0.056 EUR
5000+ 0.051 EUR
Mindestbestellmenge: 56
HN1C03FU-B,LF HN1C03FU-B,LF Toshiba Semiconductor and Storage docget.jsp?did=19156&prodName=HN1C03FU Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar
HN1C03FU-B,LF HN1C03FU-B,LF Toshiba Semiconductor and Storage docget.jsp?did=19156&prodName=HN1C03FU Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2906 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
36+ 0.49 EUR
100+ 0.28 EUR
500+ 0.18 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DF3A3.3FV,L3F DF3A3.3FV,L3F Toshiba Semiconductor and Storage Description: TVS DIODE VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.1V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
DF3A3.3FV,L3F DF3A3.3FV,L3F Toshiba Semiconductor and Storage Description: TVS DIODE VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.1V
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 4340 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
55+ 0.32 EUR
104+ 0.17 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
2000+ 0.069 EUR
Mindestbestellmenge: 46
2SA1182-GR,LF 2SA1182-GR,LF Toshiba Semiconductor and Storage 2SA1182_datasheet_en_20210625.pdf?did=19355&prodName=2SA1182 Description: TRANS PNP 30V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.087 EUR
Mindestbestellmenge: 3000
2SA1182-GR,LF 2SA1182-GR,LF Toshiba Semiconductor and Storage 2SA1182_datasheet_en_20210625.pdf?did=19355&prodName=2SA1182 Description: TRANS PNP 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 8549 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
74VHC374FT 74VHC374FT Toshiba Semiconductor and Storage docget.jsp?did=15355&prodName=74VHC374FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.24 EUR
Mindestbestellmenge: 2500
74VHC374FT 74VHC374FT Toshiba Semiconductor and Storage docget.jsp?did=15355&prodName=74VHC374FT Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 4878 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
31+ 0.57 EUR
33+ 0.53 EUR
100+ 0.43 EUR
250+ 0.4 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 27
TBD62304APG,HZ TBD62304APG,HZ Toshiba Semiconductor and Storage TBD62304AFNG_datasheet_en_20170324.pdf?did=58116&prodName=TBD62304AFNG Description: IC PWR DRIVER N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 610 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
25+ 1.96 EUR
100+ 1.62 EUR
500+ 1.37 EUR
Mindestbestellmenge: 8
TK100S04N1L,LXHQ TK100S04N1L,LXHQ Toshiba Semiconductor and Storage TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.09 EUR
Mindestbestellmenge: 2000
TK100S04N1L,LXHQ TK100S04N1L,LXHQ Toshiba Semiconductor and Storage TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2594 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
10+ 2.16 EUR
100+ 1.68 EUR
500+ 1.42 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 7
TCK22912G,LF TCK22912G,LF Toshiba Semiconductor and Storage TCK22910G_datasheet_en_20210224.pdf?did=53242&prodName=TCK22910G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Over Temperature, Reverse Current, UVLO
Part Status: Active
Produkt ist nicht verfügbar
TCK22912G,LF TCK22912G,LF Toshiba Semiconductor and Storage TCK22910G_datasheet_en_20210224.pdf?did=53242&prodName=TCK22910G Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Over Temperature, Reverse Current, UVLO
Part Status: Active
auf Bestellung 4937 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
27+ 0.66 EUR
100+ 0.46 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
2000+ 0.26 EUR
Mindestbestellmenge: 23
74VHCT240AFT 74VHCT240AFT Toshiba Semiconductor and Storage 74VHCT240AFT_datasheet_en_20170223.pdf?did=14049&prodName=74VHCT240AFT Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.28 EUR
Mindestbestellmenge: 2500
74VHCT240AFT 74VHCT240AFT Toshiba Semiconductor and Storage 74VHCT240AFT_datasheet_en_20170223.pdf?did=14049&prodName=74VHCT240AFT Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 4847 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
26+ 0.68 EUR
28+ 0.64 EUR
100+ 0.51 EUR
250+ 0.47 EUR
500+ 0.4 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
74VHCV245FT 74VHCV245FT Toshiba Semiconductor and Storage Description: IC TXRX NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.25 EUR
Mindestbestellmenge: 2500
74VHCV245FT 74VHCV245FT Toshiba Semiconductor and Storage Description: IC TXRX NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOP
auf Bestellung 6720 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
29+ 0.61 EUR
31+ 0.57 EUR
100+ 0.46 EUR
250+ 0.42 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 25
TRS16N65FB,S1F(S TRS16N65FB,S1F(S Toshiba Semiconductor and Storage Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
TPH3R70APL,L1Q TPH3R70APL,L1Q Toshiba Semiconductor and Storage TPH3R70APL_datasheet_en_20191017.pdf?did=59335&prodName=TPH3R70APL Description: MOSFET N-CH 100V 90A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.11 EUR
Mindestbestellmenge: 5000
TPH3R70APL,L1Q TPH3R70APL,L1Q Toshiba Semiconductor and Storage TPH3R70APL_datasheet_en_20191017.pdf?did=59335&prodName=TPH3R70APL Description: MOSFET N-CH 100V 90A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 8615 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.55 EUR
10+ 2.12 EUR
100+ 1.69 EUR
500+ 1.43 EUR
1000+ 1.21 EUR
2000+ 1.15 EUR
Mindestbestellmenge: 7
TPWR6003PL,L1Q TPWR6003PL,L1Q Toshiba Semiconductor and Storage TPWR6003PL_datasheet_en_20191021.pdf?did=36851&prodName=TPWR6003PL Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 14886 Stücke:
Lieferzeit 10-14 Tag (e)
5000+2.23 EUR
Mindestbestellmenge: 5000
TPWR6003PL,L1Q TPWR6003PL,L1Q Toshiba Semiconductor and Storage TPWR6003PL_datasheet_en_20191021.pdf?did=36851&prodName=TPWR6003PL Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 14886 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.77 EUR
10+ 4.02 EUR
100+ 3.25 EUR
500+ 2.89 EUR
1000+ 2.47 EUR
2000+ 2.33 EUR
Mindestbestellmenge: 4
RN1101MFV,L3F(CT RN1101MFV,L3F(CT Toshiba Semiconductor and Storage RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.046 EUR
Mindestbestellmenge: 8000
RN1101MFV,L3F(CT RN1101MFV,L3F(CT Toshiba Semiconductor and Storage RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 14911 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
2000+ 0.049 EUR
Mindestbestellmenge: 63
RN1101MFV,L3F RN1101MFV,L3F Toshiba Semiconductor and Storage RN1101-06MFV_2010-03-07.pdf Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
TCR2EE24,LM(CT TCR2EE24,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=13794&prodName=TCR2EE24 Description: IC REG LINEAR 2.4V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EE24,LM(CT TCR2EE24,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=13794&prodName=TCR2EE24 Description: IC REG LINEAR 2.4V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
38+ 0.47 EUR
Mindestbestellmenge: 28
RN4902,LF(CT RN4902,LF(CT Toshiba Semiconductor and Storage RN4902_datasheet_en_20230213.pdf?did=18950&prodName=RN4902 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN4902,LF(CT RN4902,LF(CT Toshiba Semiconductor and Storage RN4902_datasheet_en_20230213.pdf?did=18950&prodName=RN4902 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
auf Bestellung 2284 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
58+ 0.31 EUR
118+ 0.15 EUR
500+ 0.12 EUR
1000+ 0.087 EUR
Mindestbestellmenge: 39
TB67S179FTG,EL TB67S179FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=35805&prodName=TB67S179FTG Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
TB67S179FTG,EL TB67S179FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=35805&prodName=TB67S179FTG Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
auf Bestellung 4550 Stücke:
Lieferzeit 10-14 Tag (e)
TC74ACT240F(EL,F) TC74ACT240F(EL,F) Toshiba Semiconductor and Storage TC74ACT240F_datasheet_en_20210323.pdf?did=70628&prodName=TC74ACT240F Description: IC BUFF INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
TC74ACT240F(EL,F) TC74ACT240F(EL,F) Toshiba Semiconductor and Storage TC74ACT240F_datasheet_en_20210323.pdf?did=70628&prodName=TC74ACT240F Description: IC BUFF INVERT 5.5V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
TC7SB3157DL6X,L TC7SB3157DL6X,L Toshiba Semiconductor and Storage docget.jsp?did=14808&prodName=TC7SB3157DL6X Description: IC MUX/DEMUX 1 X 2:1 6MP6D
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
TC7SB3157DL6X,L TC7SB3157DL6X,L Toshiba Semiconductor and Storage docget.jsp?did=14808&prodName=TC7SB3157DL6X Description: IC MUX/DEMUX 1 X 2:1 6MP6D
auf Bestellung 14105 Stücke:
Lieferzeit 10-14 Tag (e)
RN1708JE(TE85L,F) RN1708JE(TE85L,F) Toshiba Semiconductor and Storage RN1708JE_datasheet_en_20140301.pdf?did=19124&prodName=RN1708JE Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
RN1708JE(TE85L,F) RN1708JE(TE85L,F) Toshiba Semiconductor and Storage RN1708JE_datasheet_en_20140301.pdf?did=19124&prodName=RN1708JE Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3890 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
34+ 0.52 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 25
RN1709JE(TE85L,F) RN1709JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19124&prodName=RN1709JE Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
RN1709JE(TE85L,F) RN1709JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=19124&prodName=RN1709JE Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3773 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
34+ 0.52 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 25
2SC6026MFV-Y,L3F 2SC6026MFV-Y,L3F Toshiba Semiconductor and Storage docget.jsp?did=6106&prodName=2SC6026MFV Description: TRANS NPN 50V 0.15A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.05 EUR
Mindestbestellmenge: 8000
2SC6026MFV-Y,L3F 2SC6026MFV-Y,L3F Toshiba Semiconductor and Storage docget.jsp?did=6106&prodName=2SC6026MFV Description: TRANS NPN 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 16026 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
82+ 0.21 EUR
152+ 0.12 EUR
500+ 0.091 EUR
1000+ 0.063 EUR
2000+ 0.053 EUR
Mindestbestellmenge: 59
TLP731(GB-LF1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GR-TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GB,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(GR-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GR-LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-GB-LF1,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(GB-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4-LF4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(BL-LF2,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(GB,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
TLP731(D4GRL-LF2,F
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
RN1310,LF docget.jsp?did=18781&prodName=RN1310
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1310,LF docget.jsp?did=18781&prodName=RN1310
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
RN1311,LF docget.jsp?did=18781&prodName=RN1310
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Produkt ist nicht verfügbar
DF2S16CT,L3F docget.jsp?did=888&prodName=DF2S16CT
DF2S16CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.044 EUR
Mindestbestellmenge: 10000
DF2S16CT,L3F docget.jsp?did=888&prodName=DF2S16CT
DF2S16CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
56+0.32 EUR
61+ 0.29 EUR
112+ 0.16 EUR
500+ 0.097 EUR
1000+ 0.066 EUR
2000+ 0.056 EUR
5000+ 0.051 EUR
Mindestbestellmenge: 56
HN1C03FU-B,LF docget.jsp?did=19156&prodName=HN1C03FU
HN1C03FU-B,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
Produkt ist nicht verfügbar
HN1C03FU-B,LF docget.jsp?did=19156&prodName=HN1C03FU
HN1C03FU-B,LF
Hersteller: Toshiba Semiconductor and Storage
Description: NPN + NPN IND. TRANSISTOR VCEO20
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Frequency - Transition: 30MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 2906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
36+ 0.49 EUR
100+ 0.28 EUR
500+ 0.18 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 27
DF3A3.3FV,L3F
DF3A3.3FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.1V
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
DF3A3.3FV,L3F
DF3A3.3FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 115pF @ 1MHz
Supplier Device Package: VESM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 3.1V
Power Line Protection: No
Part Status: Obsolete
auf Bestellung 4340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
55+ 0.32 EUR
104+ 0.17 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
2000+ 0.069 EUR
Mindestbestellmenge: 46
2SA1182-GR,LF 2SA1182_datasheet_en_20210625.pdf?did=19355&prodName=2SA1182
2SA1182-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.087 EUR
Mindestbestellmenge: 3000
2SA1182-GR,LF 2SA1182_datasheet_en_20210625.pdf?did=19355&prodName=2SA1182
2SA1182-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 30V 0.5A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 150 mW
auf Bestellung 8549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
34+0.53 EUR
50+ 0.36 EUR
102+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 34
74VHC374FT docget.jsp?did=15355&prodName=74VHC374FT
74VHC374FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.24 EUR
Mindestbestellmenge: 2500
74VHC374FT docget.jsp?did=15355&prodName=74VHC374FT
74VHC374FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE SNGL 8BIT 20TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 8mA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 120 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOPB
Max Propagation Delay @ V, Max CL: 10.1ns @ 5V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 4878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
31+ 0.57 EUR
33+ 0.53 EUR
100+ 0.43 EUR
250+ 0.4 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 27
TBD62304APG,HZ TBD62304AFNG_datasheet_en_20170324.pdf?did=58116&prodName=TBD62304AFNG
TBD62304APG,HZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: Low Side
Rds On (Typ): 1.5Ohm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.45 EUR
25+ 1.96 EUR
100+ 1.62 EUR
500+ 1.37 EUR
Mindestbestellmenge: 8
TK100S04N1L,LXHQ TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L
TK100S04N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1.09 EUR
Mindestbestellmenge: 2000
TK100S04N1L,LXHQ TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L
TK100S04N1L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.64 EUR
10+ 2.16 EUR
100+ 1.68 EUR
500+ 1.42 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 7
TCK22912G,LF TCK22910G_datasheet_en_20210224.pdf?did=53242&prodName=TCK22910G
TCK22912G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Over Temperature, Reverse Current, UVLO
Part Status: Active
Produkt ist nicht verfügbar
TCK22912G,LF TCK22910G_datasheet_en_20210224.pdf?did=53242&prodName=TCK22910G
TCK22912G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 WCSP6E
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 31mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPE (0.80x1.2)
Fault Protection: Over Temperature, Reverse Current, UVLO
Part Status: Active
auf Bestellung 4937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.77 EUR
27+ 0.66 EUR
100+ 0.46 EUR
500+ 0.36 EUR
1000+ 0.29 EUR
2000+ 0.26 EUR
Mindestbestellmenge: 23
74VHCT240AFT 74VHCT240AFT_datasheet_en_20170223.pdf?did=14049&prodName=74VHCT240AFT
74VHCT240AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.28 EUR
Mindestbestellmenge: 2500
74VHCT240AFT 74VHCT240AFT_datasheet_en_20170223.pdf?did=14049&prodName=74VHCT240AFT
74VHCT240AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 4847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
26+ 0.68 EUR
28+ 0.64 EUR
100+ 0.51 EUR
250+ 0.47 EUR
500+ 0.4 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
74VHCV245FT
74VHCV245FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.25 EUR
Mindestbestellmenge: 2500
74VHCV245FT
74VHCV245FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 8
Current - Output High, Low: 16mA, 16mA
Supplier Device Package: 20-TSSOP
auf Bestellung 6720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
29+ 0.61 EUR
31+ 0.57 EUR
100+ 0.46 EUR
250+ 0.42 EUR
500+ 0.36 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 25
TRS16N65FB,S1F(S
TRS16N65FB,S1F(S
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
TPH3R70APL,L1Q TPH3R70APL_datasheet_en_20191017.pdf?did=59335&prodName=TPH3R70APL
TPH3R70APL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 90A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.11 EUR
Mindestbestellmenge: 5000
TPH3R70APL,L1Q TPH3R70APL_datasheet_en_20191017.pdf?did=59335&prodName=TPH3R70APL
TPH3R70APL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 90A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 45A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
auf Bestellung 8615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.55 EUR
10+ 2.12 EUR
100+ 1.69 EUR
500+ 1.43 EUR
1000+ 1.21 EUR
2000+ 1.15 EUR
Mindestbestellmenge: 7
TPWR6003PL,L1Q TPWR6003PL_datasheet_en_20191021.pdf?did=36851&prodName=TPWR6003PL
TPWR6003PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 14886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+2.23 EUR
Mindestbestellmenge: 5000
TPWR6003PL,L1Q TPWR6003PL_datasheet_en_20191021.pdf?did=36851&prodName=TPWR6003PL
TPWR6003PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 14886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.77 EUR
10+ 4.02 EUR
100+ 3.25 EUR
500+ 2.89 EUR
1000+ 2.47 EUR
2000+ 2.33 EUR
Mindestbestellmenge: 4
RN1101MFV,L3F(CT RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV
RN1101MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.046 EUR
Mindestbestellmenge: 8000
RN1101MFV,L3F(CT RN1101MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1101MFV
RN1101MFV,L3F(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 14911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.2 EUR
163+ 0.11 EUR
500+ 0.085 EUR
1000+ 0.059 EUR
2000+ 0.049 EUR
Mindestbestellmenge: 63
RN1101MFV,L3F RN1101-06MFV_2010-03-07.pdf
RN1101MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar
TCR2EE24,LM(CT docget.jsp?did=13794&prodName=TCR2EE24
TCR2EE24,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.4V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
TCR2EE24,LM(CT docget.jsp?did=13794&prodName=TCR2EE24
TCR2EE24,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.4V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
38+ 0.47 EUR
Mindestbestellmenge: 28
RN4902,LF(CT RN4902_datasheet_en_20230213.pdf?did=18950&prodName=RN4902
RN4902,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
RN4902,LF(CT RN4902_datasheet_en_20230213.pdf?did=18950&prodName=RN4902
RN4902,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
auf Bestellung 2284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
39+0.46 EUR
58+ 0.31 EUR
118+ 0.15 EUR
500+ 0.12 EUR
1000+ 0.087 EUR
Mindestbestellmenge: 39
TB67S179FTG,EL docget.jsp?did=35805&prodName=TB67S179FTG
TB67S179FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
TB67S179FTG,EL docget.jsp?did=35805&prodName=TB67S179FTG
TB67S179FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
auf Bestellung 4550 Stücke:
Lieferzeit 10-14 Tag (e)
TC74ACT240F(EL,F) TC74ACT240F_datasheet_en_20210323.pdf?did=70628&prodName=TC74ACT240F
TC74ACT240F(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
TC74ACT240F(EL,F) TC74ACT240F_datasheet_en_20210323.pdf?did=70628&prodName=TC74ACT240F
TC74ACT240F(EL,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF INVERT 5.5V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
TC7SB3157DL6X,L docget.jsp?did=14808&prodName=TC7SB3157DL6X
TC7SB3157DL6X,L
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 6MP6D
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
TC7SB3157DL6X,L docget.jsp?did=14808&prodName=TC7SB3157DL6X
TC7SB3157DL6X,L
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 6MP6D
auf Bestellung 14105 Stücke:
Lieferzeit 10-14 Tag (e)
RN1708JE(TE85L,F) RN1708JE_datasheet_en_20140301.pdf?did=19124&prodName=RN1708JE
RN1708JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
RN1708JE(TE85L,F) RN1708JE_datasheet_en_20140301.pdf?did=19124&prodName=RN1708JE
RN1708JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
34+ 0.52 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 25
RN1709JE(TE85L,F) docget.jsp?did=19124&prodName=RN1709JE
RN1709JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
Produkt ist nicht verfügbar
RN1709JE(TE85L,F) docget.jsp?did=19124&prodName=RN1709JE
RN1709JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ESV
Part Status: Active
auf Bestellung 3773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.7 EUR
34+ 0.52 EUR
100+ 0.3 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
2000+ 0.13 EUR
Mindestbestellmenge: 25
2SC6026MFV-Y,L3F docget.jsp?did=6106&prodName=2SC6026MFV
2SC6026MFV-Y,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.05 EUR
Mindestbestellmenge: 8000
2SC6026MFV-Y,L3F docget.jsp?did=6106&prodName=2SC6026MFV
2SC6026MFV-Y,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 60MHz
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
auf Bestellung 16026 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
59+0.3 EUR
82+ 0.21 EUR
152+ 0.12 EUR
500+ 0.091 EUR
1000+ 0.063 EUR
2000+ 0.053 EUR
Mindestbestellmenge: 59
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