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74VHC27FT 74VHC27FT Toshiba Semiconductor and Storage docget.jsp?did=15761&prodName=74VHC27FT Description: IC GATE NOR 3CH 3-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74VHC27FT 74VHC27FT Toshiba Semiconductor and Storage docget.jsp?did=15761&prodName=74VHC27FT Description: IC GATE NOR 3CH 3-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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36+0.58 EUR
40+0.52 EUR
100+0.36 EUR
250+0.31 EUR
500+0.25 EUR
1000+0.19 EUR
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SSM3K376R,LF SSM3K376R,LF Toshiba Semiconductor and Storage docget.jsp?did=60463&prodName=SSM3K376R Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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SSM3K376R,LF SSM3K376R,LF Toshiba Semiconductor and Storage docget.jsp?did=60463&prodName=SSM3K376R Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
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100+0.29 EUR
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TC7QPB9306FK(EL) TC7QPB9306FK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57137&prodName=TC7QPB9306FK Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Supplier Device Package: 14-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 4 x 1:1
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC7QPB9306FK(EL) TC7QPB9306FK(EL) Toshiba Semiconductor and Storage docget.jsp?did=57137&prodName=TC7QPB9306FK Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 14-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 4 x 1:1
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21+1.02 EUR
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100+0.81 EUR
250+0.75 EUR
500+0.73 EUR
1000+0.71 EUR
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TC7WPB9306FK,LF(CT TC7WPB9306FK,LF(CT Toshiba Semiconductor and Storage TC7WPB9306FK_datasheet_en_20220907.pdf?did=12388&prodName=TC7WPB9306FK Description: IC BUS BAR CENTRAL 2X1:1 8-SSOP
Supplier Device Package: 8-SSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Bar - Central
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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TC7WPB9306FK,LF(CT TC7WPB9306FK,LF(CT Toshiba Semiconductor and Storage TC7WPB9306FK_datasheet_en_20220907.pdf?did=12388&prodName=TC7WPB9306FK Description: IC BUS BAR CENTRAL 2X1:1 8-SSOP
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Bar - Central
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
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63+0.33 EUR
72+0.3 EUR
100+0.25 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.21 EUR
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TK10P60W,RVQ TK10P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13502&prodName=TK10P60W Description: MOSFET N CH 600V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TK10P60W,RVQ TK10P60W,RVQ Toshiba Semiconductor and Storage docget.jsp?did=13502&prodName=TK10P60W Description: MOSFET N CH 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 2248 Stücke:
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100+2.2 EUR
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TJ90S04M3L,LXHQ TJ90S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=58174&prodName=TJ90S04M3L Description: MOSFET P-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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TJ90S04M3L,LXHQ TJ90S04M3L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=58174&prodName=TJ90S04M3L Description: MOSFET P-CH 40V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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100+2.12 EUR
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TCR15AG25,LF TCR15AG25,LF Toshiba Semiconductor and Storage datasheet_en_20230824.pdf?did=59680 Description: IC REG LINEAR 2.5V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR15AG25,LF TCR15AG25,LF Toshiba Semiconductor and Storage datasheet_en_20230824.pdf?did=59680 Description: IC REG LINEAR 2.5V 1.5A 6WCSP
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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TCR15AG30,LF TCR15AG30,LF Toshiba Semiconductor and Storage docget.jsp?did=59680&prodName=TCR15AG09 Description: IC REG LINEAR 3V 1.5A 6WCSP
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TCR15AG30,LF TCR15AG30,LF Toshiba Semiconductor and Storage docget.jsp?did=59680&prodName=TCR15AG09 Description: IC REG LINEAR 3V 1.5A 6WCSP
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TCR15AG33,LF TCR15AG33,LF Toshiba Semiconductor and Storage datasheet_en_20230824.pdf?did=59680 Description: IC REG LINEAR 3.3V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR15AG33,LF TCR15AG33,LF Toshiba Semiconductor and Storage datasheet_en_20230824.pdf?did=59680 Description: IC REG LINEAR 3.3V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCR15AG18,LF TCR15AG18,LF Toshiba Semiconductor and Storage datasheet_en_20230824.pdf?did=59680 Description: IC REG LINEAR 1.8V 1.5A 6WCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.648V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
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TCR15AG18,LF TCR15AG18,LF Toshiba Semiconductor and Storage datasheet_en_20230824.pdf?did=59680 Description: IC REG LINEAR 1.8V 1.5A 6WCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.648V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
Produkt ist nicht verfügbar
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TLP624-2(BV-TP5,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP624-2(TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TK17A65W,S5X TK17A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=14528&prodName=TK17A65W Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
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TK17A65W5,S5X TK17A65W5,S5X Toshiba Semiconductor and Storage docget.jsp?did=14527&prodName=TK17A65W5 Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 8.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Produkt ist nicht verfügbar
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SSM6J424TU,LF SSM6J424TU,LF Toshiba Semiconductor and Storage SSM6J424TU_datasheet_en_20180327.pdf?did=61138&prodName=SSM6J424TU Description: MOSFET P-CH 20V 6A UF6
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM6J424TU,LF SSM6J424TU,LF Toshiba Semiconductor and Storage SSM6J424TU_datasheet_en_20180327.pdf?did=61138&prodName=SSM6J424TU Description: MOSFET P-CH 20V 6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.99 EUR
27+0.8 EUR
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500+0.4 EUR
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SSM6J502NU,LF SSM6J502NU,LF Toshiba Semiconductor and Storage docget.jsp?did=6822&prodName=SSM6J502NU Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
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SSM6J502NU,LF SSM6J502NU,LF Toshiba Semiconductor and Storage docget.jsp?did=6822&prodName=SSM6J502NU Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 9005 Stücke:
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30+0.73 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
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TRS6A65F,S1Q TRS6A65F,S1Q Toshiba Semiconductor and Storage Description: DIODE SIL CARBIDE 650V 6A TO220F
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
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TLP3553A(TP1,F TLP3553A(TP1,F Toshiba Semiconductor and Storage TLP3553A_datasheet_en_20230529.pdf?did=61550&prodName=TLP3553A Description: SSR RELAY SPST-NO 4A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 4 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
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Lieferzeit 10-14 Tag (e)
1500+3.86 EUR
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TLP3553A(TP1,F TLP3553A(TP1,F Toshiba Semiconductor and Storage TLP3553A_datasheet_en_20230529.pdf?did=61550&prodName=TLP3553A Description: SSR RELAY SPST-NO 4A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 4 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 6593 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.57 EUR
10+4.96 EUR
25+4.74 EUR
50+4.58 EUR
100+4.41 EUR
250+4.22 EUR
500+4.07 EUR
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TRS12N65FB,S1F(S Toshiba Semiconductor and Storage Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Produkt ist nicht verfügbar
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TLP781F(D4NKODGB7F Toshiba Semiconductor and Storage TLP781%28F%29.pdf Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP5751H(D4TP4,E TLP5751H(D4TP4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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TLP5751H(D4TP4,E TLP5751H(D4TP4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 575 Stücke:
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6+3.89 EUR
10+2.8 EUR
100+2.14 EUR
500+1.84 EUR
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TLP5751H(TP4,E TLP5751H(TP4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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TLP5751H(TP4,E TLP5751H(TP4,E Toshiba Semiconductor and Storage TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLP3106A(TP,F TLP3106A(TP,F Toshiba Semiconductor and Storage docget.jsp?did=67917&prodName=TLP3106A Description: SSR RELAY SPST-NO 4.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4.5 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 30 mOhms
auf Bestellung 7500 Stücke:
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2500+4.81 EUR
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TLP3106A(TP,F TLP3106A(TP,F Toshiba Semiconductor and Storage docget.jsp?did=67917&prodName=TLP3106A Description: SSR RELAY SPST-NO 4.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4.5 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 30 mOhms
auf Bestellung 7553 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.12 EUR
10+6.35 EUR
25+6.07 EUR
50+5.85 EUR
100+5.65 EUR
250+5.4 EUR
500+5.21 EUR
1000+5.03 EUR
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TLP3109A(TP,F TLP3109A(TP,F Toshiba Semiconductor and Storage docget.jsp?did=65124&prodName=TLP3109A&returnFlg=false Description: SSR RELAY SPST-NO 3A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3 A
Approval Agency: UL
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 65 mOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TLP3109A(TP,F TLP3109A(TP,F Toshiba Semiconductor and Storage docget.jsp?did=65124&prodName=TLP3109A&returnFlg=false Description: SSR RELAY SPST-NO 3A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3 A
Approval Agency: UL
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 65 mOhms
auf Bestellung 4305 Stücke:
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3+7.58 EUR
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25+6.44 EUR
50+6.22 EUR
100+6.01 EUR
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500+5.55 EUR
1000+5.36 EUR
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TLP3107A(TP,F TLP3107A(TP,F Toshiba Semiconductor and Storage docget.jsp?did=67919&prodName=TLP3107A Description: SSR RELAY SPST-NO 4A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 40 mOhms
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2500+3.36 EUR
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TLP3107A(TP,F TLP3107A(TP,F Toshiba Semiconductor and Storage docget.jsp?did=67919&prodName=TLP3107A Description: SSR RELAY SPST-NO 4A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 40 mOhms
auf Bestellung 7329 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.19 EUR
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500+3.69 EUR
1000+3.59 EUR
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TRS10A65F,S1Q TRS10A65F,S1Q Toshiba Semiconductor and Storage Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 650V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
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TCR2EF33,LM(CT TCR2EF33,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 228000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.093 EUR
6000+0.089 EUR
9000+0.088 EUR
15000+0.086 EUR
21000+0.084 EUR
30000+0.083 EUR
Mindestbestellmenge: 3000 Stücke
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TCR2EF33,LM(CT TCR2EF33,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 228269 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
129+0.17 EUR
147+0.14 EUR
173+0.12 EUR
250+0.11 EUR
500+0.1 EUR
1000+0.099 EUR
Mindestbestellmenge: 84 Stücke
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TLP293(BL,E TLP293(BL,E Toshiba Semiconductor and Storage TLP293_datasheet_en_20191129.pdf?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Bulk
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3023 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.05 EUR
30+0.71 EUR
175+0.48 EUR
525+0.42 EUR
1050+0.39 EUR
2100+0.37 EUR
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TLP293(BLL,E TLP293(BLL,E Toshiba Semiconductor and Storage TLP293_datasheet_en_20191129.pdf?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Bulk
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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2SA1313-Y,LF 2SA1313-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19265&prodName=2SA1313 Description: TRANS PNP 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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2SA1313-Y,LF 2SA1313-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19265&prodName=2SA1313 Description: TRANS PNP 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6242 Stücke:
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44+0.48 EUR
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500+0.13 EUR
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JDH2S02SL,L3F JDH2S02SL,L3F Toshiba Semiconductor and Storage JDH2S02SL_datasheet_en_20151113.pdf?did=30457&prodName=JDH2S02SL Description: DIODE SCHOTTKY 10V 10MA SL2
Current - Reverse Leakage @ Vr: 25 µA @ 500 mV
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SL2
Current - Average Rectified (Io): 10mA
Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JDH2S02SL,L3F JDH2S02SL,L3F Toshiba Semiconductor and Storage JDH2S02SL_datasheet_en_20151113.pdf?did=30457&prodName=JDH2S02SL Description: DIODE SCHOTTKY 10V 10MA SL2
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SL2
Current - Average Rectified (Io): 10mA
Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 25 µA @ 500 mV
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DF6D5M4N,LF DF6D5M4N,LF Toshiba Semiconductor and Storage DF6D5M4N.pdf Description: TVS DIODE 3.6VWM 15VC 6DFN
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DF6D5M4N,LF DF6D5M4N,LF Toshiba Semiconductor and Storage DF6D5M4N.pdf Description: TVS DIODE 3.6VWM 15VC 6DFN
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DF6D6M4N,LF DF6D6M4N,LF Toshiba Semiconductor and Storage docget.jsp?did=57156&prodName=DF6D6M4N Description: TVS DIODE 5.5VWM 15VC 6DFN
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DF6D6M4N,LF DF6D6M4N,LF Toshiba Semiconductor and Storage docget.jsp?did=57156&prodName=DF6D6M4N Description: TVS DIODE 5.5VWM 15VC 6DFN
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TC78H611FNG,EL TC78H611FNG,EL Toshiba Semiconductor and Storage TC78H611FNG_datasheet_en_20170410.pdf?did=58090&prodName=TC78H611FNG Description: IC MOTOR DRIVER 16TSSOP
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-TSSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: PWM
Current - Output: 1.1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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TC78H611FNG,EL TC78H611FNG,EL Toshiba Semiconductor and Storage TC78H611FNG_datasheet_en_20170410.pdf?did=58090&prodName=TC78H611FNG Description: IC MOTOR DRIVER 16TSSOP
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-TSSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: PWM
Current - Output: 1.1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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RN1710,LF RN1710,LF Toshiba Semiconductor and Storage docget.jsp?did=18821&prodName=RN1710 Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
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RN1710,LF RN1710,LF Toshiba Semiconductor and Storage docget.jsp?did=18821&prodName=RN1710 Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
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74VHC27FT docget.jsp?did=15761&prodName=74VHC27FT
74VHC27FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 3CH 3-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74VHC27FT docget.jsp?did=15761&prodName=74VHC27FT
74VHC27FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 3CH 3-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOPB
Input Logic Level - High: 2V ~ 4.5V
Input Logic Level - Low: 0.1V ~ 36V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
auf Bestellung 3351 Stücke:
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SSM3K376R,LF docget.jsp?did=60463&prodName=SSM3K376R
SSM3K376R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
auf Bestellung 45000 Stücke:
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3000+0.15 EUR
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SSM3K376R,LF docget.jsp?did=60463&prodName=SSM3K376R
SSM3K376R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
auf Bestellung 47496 Stücke:
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29+0.74 EUR
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65+0.32 EUR
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TC7QPB9306FK(EL) docget.jsp?did=57137&prodName=TC7QPB9306FK
TC7QPB9306FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Supplier Device Package: 14-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 4 x 1:1
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC7QPB9306FK(EL) docget.jsp?did=57137&prodName=TC7QPB9306FK
TC7QPB9306FK(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH 4 X 1:1 14-VSSOP
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 14-VSSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 4 x 1:1
auf Bestellung 1540 Stücke:
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15+1.44 EUR
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TC7WPB9306FK,LF(CT TC7WPB9306FK_datasheet_en_20220907.pdf?did=12388&prodName=TC7WPB9306FK
TC7WPB9306FK,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS BAR CENTRAL 2X1:1 8-SSOP
Supplier Device Package: 8-SSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Bar - Central
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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TC7WPB9306FK,LF(CT TC7WPB9306FK_datasheet_en_20220907.pdf?did=12388&prodName=TC7WPB9306FK
TC7WPB9306FK,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS BAR CENTRAL 2X1:1 8-SSOP
Part Status: Active
Supplier Device Package: 8-SSOP
Voltage Supply Source: Dual Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Bar - Central
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2866 Stücke:
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44+0.48 EUR
63+0.33 EUR
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TK10P60W,RVQ docget.jsp?did=13502&prodName=TK10P60W
TK10P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 9.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Produkt ist nicht verfügbar
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TK10P60W,RVQ docget.jsp?did=13502&prodName=TK10P60W
TK10P60W,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 9.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
auf Bestellung 2248 Stücke:
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5+5.02 EUR
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50+2.45 EUR
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TJ90S04M3L,LXHQ docget.jsp?did=58174&prodName=TJ90S04M3L
TJ90S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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2000+1.44 EUR
6000+1.3 EUR
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TJ90S04M3L,LXHQ docget.jsp?did=58174&prodName=TJ90S04M3L
TJ90S04M3L,LXHQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6165 Stücke:
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5+4.86 EUR
10+3.12 EUR
50+2.37 EUR
100+2.12 EUR
500+1.7 EUR
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TCR15AG25,LF datasheet_en_20230824.pdf?did=59680
TCR15AG25,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR15AG25,LF datasheet_en_20230824.pdf?did=59680
TCR15AG25,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 1.5A 6WCSP
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2.5V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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TCR15AG30,LF docget.jsp?did=59680&prodName=TCR15AG09
TCR15AG30,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 1.5A 6WCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TCR15AG30,LF docget.jsp?did=59680&prodName=TCR15AG09
TCR15AG30,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 1.5A 6WCSP
Produkt ist nicht verfügbar
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TCR15AG33,LF datasheet_en_20230824.pdf?did=59680
TCR15AG33,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TCR15AG33,LF datasheet_en_20230824.pdf?did=59680
TCR15AG33,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 1.5A 6WCSP
Protection Features: Current Limit, Thermal Shutdown, UVLO
Voltage Dropout (Max): 0.648V @ 1.5A
PSRR: 95dB ~ 60dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: 6-WCSP (1.2x0.80)
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 40 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 1.5A
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCR15AG18,LF datasheet_en_20230824.pdf?did=59680
TCR15AG18,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 1.5A 6WCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.648V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
Produkt ist nicht verfügbar
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TCR15AG18,LF datasheet_en_20230824.pdf?did=59680
TCR15AG18,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 1.5A 6WCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-WCSP (1.2x0.80)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Part Status: Active
PSRR: 95dB ~ 60dB (1kHz)
Voltage Dropout (Max): 0.648V @ 1.5A
Protection Features: Current Limit, Thermal Shutdown, UVLO
Produkt ist nicht verfügbar
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TLP624-2(BV-TP5,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLP624-2(TP1,F)
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Produkt ist nicht verfügbar
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TK17A65W,S5X docget.jsp?did=14528&prodName=TK17A65W
TK17A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.33 EUR
10+5.49 EUR
Mindestbestellmenge: 3 Stücke
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TK17A65W5,S5X docget.jsp?did=14527&prodName=TK17A65W5
TK17A65W5,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 8.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Produkt ist nicht verfügbar
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SSM6J424TU,LF SSM6J424TU_datasheet_en_20180327.pdf?did=61138&prodName=SSM6J424TU
SSM6J424TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A UF6
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SSM6J424TU,LF SSM6J424TU_datasheet_en_20180327.pdf?did=61138&prodName=SSM6J424TU
SSM6J424TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +6V, -8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.99 EUR
27+0.8 EUR
100+0.55 EUR
500+0.4 EUR
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SSM6J502NU,LF docget.jsp?did=6822&prodName=SSM6J502NU
SSM6J502NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
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SSM6J502NU,LF docget.jsp?did=6822&prodName=SSM6J502NU
SSM6J502NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 9005 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
30+0.73 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
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TRS6A65F,S1Q
TRS6A65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARBIDE 650V 6A TO220F
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 22pF @ 650V, 1MHz
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
auf Bestellung 6 Stücke:
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AnzahlPrivatkunde
4+5.78 EUR
Mindestbestellmenge: 4 Stücke
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TLP3553A(TP1,F TLP3553A_datasheet_en_20230529.pdf?did=61550&prodName=TLP3553A
TLP3553A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 4 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+3.86 EUR
3000+3.72 EUR
4500+3.65 EUR
Mindestbestellmenge: 1500 Stücke
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TLP3553A(TP1,F TLP3553A_datasheet_en_20230529.pdf?did=61550&prodName=TLP3553A
TLP3553A(TP1,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.64VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 4 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 50 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
auf Bestellung 6593 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.57 EUR
10+4.96 EUR
25+4.74 EUR
50+4.58 EUR
100+4.41 EUR
250+4.22 EUR
500+4.07 EUR
Mindestbestellmenge: 4 Stücke
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TRS12N65FB,S1F(S
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Produkt ist nicht verfügbar
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TLP781F(D4NKODGB7F TLP781%28F%29.pdf
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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TLP5751H(D4TP4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5751H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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TLP5751H(D4TP4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5751H(D4TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 575 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.89 EUR
10+2.8 EUR
100+2.14 EUR
500+1.84 EUR
Mindestbestellmenge: 6 Stücke
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TLP5751H(TP4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5751H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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TLP5751H(TP4,E TLP5754H_datasheet_en_20200901.pdf?did=66190&prodName=TLP5754H
TLP5751H(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLP3106A(TP,F docget.jsp?did=67917&prodName=TLP3106A
TLP3106A(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4.5A 0-30V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4.5 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 30 mOhms
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.81 EUR
Mindestbestellmenge: 2500 Stücke
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TLP3106A(TP,F docget.jsp?did=67917&prodName=TLP3106A
TLP3106A(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4.5A 0-30V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4.5 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 30 V
On-State Resistance (Max): 30 mOhms
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3+7.12 EUR
10+6.35 EUR
25+6.07 EUR
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250+5.4 EUR
500+5.21 EUR
1000+5.03 EUR
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TLP3109A(TP,F docget.jsp?did=65124&prodName=TLP3109A&returnFlg=false
TLP3109A(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3 A
Approval Agency: UL
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 65 mOhms
Produkt ist nicht verfügbar
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TLP3109A(TP,F docget.jsp?did=65124&prodName=TLP3109A&returnFlg=false
TLP3109A(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 3 A
Approval Agency: UL
Supplier Device Package: 6-SOP
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 65 mOhms
auf Bestellung 4305 Stücke:
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3+7.58 EUR
10+6.75 EUR
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TLP3107A(TP,F docget.jsp?did=67919&prodName=TLP3107A
TLP3107A(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 40 mOhms
auf Bestellung 5000 Stücke:
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2500+3.36 EUR
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TLP3107A(TP,F docget.jsp?did=67919&prodName=TLP3107A
TLP3107A(TP,F
Hersteller: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 4A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.173", 4.40mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: Gull Wing
Load Current: 4 A
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 6-SOP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 40 mOhms
auf Bestellung 7329 Stücke:
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3+7.19 EUR
10+5.3 EUR
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TRS10A65F,S1Q
TRS10A65F,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SIL CARB 650V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 36pF @ 650V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Produkt ist nicht verfügbar
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TCR2EF33,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EF33,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 228000 Stücke:
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3000+0.093 EUR
6000+0.089 EUR
9000+0.088 EUR
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30000+0.083 EUR
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TCR2EF33,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EF33,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 228269 Stücke:
Lieferzeit 10-14 Tag (e)
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84+0.25 EUR
129+0.17 EUR
147+0.14 EUR
173+0.12 EUR
250+0.11 EUR
500+0.1 EUR
1000+0.099 EUR
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TLP293(BL,E TLP293_datasheet_en_20191129.pdf?did=14419&prodName=TLP293
TLP293(BL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Bulk
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3023 Stücke:
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20+1.05 EUR
30+0.71 EUR
175+0.48 EUR
525+0.42 EUR
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2100+0.37 EUR
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TLP293(BLL,E TLP293_datasheet_en_20191129.pdf?did=14419&prodName=TLP293
TLP293(BLL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Bulk
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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2SA1313-Y,LF docget.jsp?did=19265&prodName=2SA1313
2SA1313-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.096 EUR
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2SA1313-Y,LF docget.jsp?did=19265&prodName=2SA1313
2SA1313-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 6242 Stücke:
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44+0.48 EUR
72+0.3 EUR
115+0.18 EUR
500+0.13 EUR
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JDH2S02SL,L3F JDH2S02SL_datasheet_en_20151113.pdf?did=30457&prodName=JDH2S02SL
JDH2S02SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 10MA SL2
Current - Reverse Leakage @ Vr: 25 µA @ 500 mV
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SL2
Current - Average Rectified (Io): 10mA
Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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JDH2S02SL,L3F JDH2S02SL_datasheet_en_20151113.pdf?did=30457&prodName=JDH2S02SL
JDH2S02SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 10MA SL2
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SL2
Current - Average Rectified (Io): 10mA
Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 25 µA @ 500 mV
auf Bestellung 9914 Stücke:
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25+0.83 EUR
41+0.51 EUR
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DF6D5M4N,LF DF6D5M4N.pdf
DF6D5M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC 6DFN
Produkt ist nicht verfügbar
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DF6D5M4N,LF DF6D5M4N.pdf
DF6D5M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 15VC 6DFN
Produkt ist nicht verfügbar
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DF6D6M4N,LF docget.jsp?did=57156&prodName=DF6D6M4N
DF6D6M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC 6DFN
Produkt ist nicht verfügbar
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DF6D6M4N,LF docget.jsp?did=57156&prodName=DF6D6M4N
DF6D6M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 15VC 6DFN
Produkt ist nicht verfügbar
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TC78H611FNG,EL TC78H611FNG_datasheet_en_20170410.pdf?did=58090&prodName=TC78H611FNG
TC78H611FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16TSSOP
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-TSSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: PWM
Current - Output: 1.1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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TC78H611FNG,EL TC78H611FNG_datasheet_en_20170410.pdf?did=58090&prodName=TC78H611FNG
TC78H611FNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER 16TSSOP
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-TSSOP
Voltage - Load: 2.5V ~ 15V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 2.7V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 85°C (TA)
Interface: PWM
Current - Output: 1.1A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1780 Stücke:
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8+2.67 EUR
11+1.94 EUR
25+1.76 EUR
100+1.56 EUR
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1000+1.37 EUR
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RN1710,LF docget.jsp?did=18821&prodName=RN1710
RN1710,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.087 EUR
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RN1710,LF docget.jsp?did=18821&prodName=RN1710
RN1710,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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