Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Seite 85 nach 217

Wählen Sie Seite:   [  << Vorherige Seite ]  1 21 42 63 80 81 82 83 84 85 86 87 88 89 90 105 126 147 168 189 210 217  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
DF5A3.3FU(TE85L,F) DF5A3.3FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.3FU Description: TVS DIODE 1VWM USV
Produkt ist nicht verfügbar
DF5A3.3FU(TE85L,F) DF5A3.3FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.3FU Description: TVS DIODE 1VWM USV
auf Bestellung 2955 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6CFU(TE85L,F DF5A3.6CFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU Description: TVS DIODE 1.8VWM USV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6CFU(TE85L,F DF5A3.6CFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU Description: TVS DIODE 1.8VWM USV
Produkt ist nicht verfügbar
DF5A3.6CFU(TE85L,F DF5A3.6CFU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU Description: TVS DIODE 1.8VWM USV
auf Bestellung 1907 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6CJE(TE85L,F DF5A3.6CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE Description: TVS DIODE 1.8VWM ESV
Produkt ist nicht verfügbar
DF5A3.6CJE(TE85L,F DF5A3.6CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE Description: TVS DIODE 1.8VWM ESV
Produkt ist nicht verfügbar
DF5A3.6CJE(TE85L,F DF5A3.6CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE Description: TVS DIODE 1.8VWM ESV
Produkt ist nicht verfügbar
DF5A3.6F(TE85L,F) DF5A3.6F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F Description: TVS DIODE 1VWM SMV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6F(TE85L,F) DF5A3.6F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F Description: TVS DIODE 1VWM SMV
auf Bestellung 5878 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6F(TE85L,F) DF5A3.6F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F Description: TVS DIODE 1VWM SMV
auf Bestellung 5878 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6FU(TE85L,F) DF5A3.6FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22250&prodName=DF5A3.6FU Description: TVS DIODE 1VWM USV
Produkt ist nicht verfügbar
DF5A3.6FU(TE85L,F) DF5A3.6FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22250&prodName=DF5A3.6FU Description: TVS DIODE 1VWM USV
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6JE(TE85L,F) DF5A3.6JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
DF5A3.6JE(TE85L,F) DF5A3.6JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
DF5A3.6JE(TE85L,F) DF5A3.6JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
DF5A5.6LFU(TE85L,F DF5A5.6LFU(TE85L,F Toshiba Semiconductor and Storage DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU Description: TVS DIODE 3.5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
Mindestbestellmenge: 3000
DF5A5.6LFU(TE85L,F DF5A5.6LFU(TE85L,F Toshiba Semiconductor and Storage DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU Description: TVS DIODE 3.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 9129 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
29+ 0.92 EUR
100+ 0.52 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 21
DF5A6.2CFU(TE85L,F DF5A6.2CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.2 EUR
6000+ 0.18 EUR
Mindestbestellmenge: 3000
DF5A6.2CFU(TE85L,F DF5A6.2CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 14743 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
33+ 0.81 EUR
100+ 0.46 EUR
500+ 0.3 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 25
DF5A6.2CJE(TE85L,F DF5A6.2CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
DF5A6.2CJE(TE85L,F DF5A6.2CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
DF5A6.2CJE(TE85L,F DF5A6.2CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
DF5A6.2F(TE85L,F) DF5A6.2F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2F Description: TVS DIODE 3VWM SMV
Produkt ist nicht verfügbar
DF5A6.2F(TE85L,F) DF5A6.2F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2F Description: TVS DIODE 3VWM SMV
Produkt ist nicht verfügbar
DF5A6.2FU(TE85L,F) DF5A6.2FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2FU Description: TVS DIODE 3VWM USV
Produkt ist nicht verfügbar
DF5A6.2FU(TE85L,F) DF5A6.2FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2FU Description: TVS DIODE 3VWM USV
auf Bestellung 24 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.14 EUR
Mindestbestellmenge: 23
DF5A6.2JE(TE85L,F) DF5A6.2JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
DF5A6.2JE(TE85L,F) DF5A6.2JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
DF5A6.2JE(TE85L,F) DF5A6.2JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
DF5A6.2LJE,LM DF5A6.2LJE,LM Toshiba Semiconductor and Storage docget.jsp?did=22264&prodName=DF5A6.2LJE Description: TVS DIODE 5VWM ESV
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.15 EUR
8000+ 0.13 EUR
12000+ 0.11 EUR
Mindestbestellmenge: 4000
DF5A6.2LJE,LM DF5A6.2LJE,LM Toshiba Semiconductor and Storage docget.jsp?did=22264&prodName=DF5A6.2LJE Description: TVS DIODE 5VWM ESV
auf Bestellung 14821 Stücke:
Lieferzeit 21-28 Tag (e)
31+0.86 EUR
37+ 0.7 EUR
100+ 0.37 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 31
DF5A6.8CFU(TE85L,F DF5A6.8CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU Description: TVS DIODE 5VWM USV
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.21 EUR
6000+ 0.19 EUR
Mindestbestellmenge: 3000
DF5A6.8CFU(TE85L,F DF5A6.8CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU Description: TVS DIODE 5VWM USV
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
32+ 0.84 EUR
100+ 0.48 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 24
DF5A6.8F,LF DF5A6.8F,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.8F Description: TVS DIODE 5VWM SMV
Produkt ist nicht verfügbar
DF5A6.8F,LF DF5A6.8F,LF Toshiba Semiconductor and Storage docget.jsp?did=3417&prodName=DF5A6.8F Description: TVS DIODE 5VWM SMV
Produkt ist nicht verfügbar
SSM3K339R,LF SSM3K339R,LF Toshiba Semiconductor and Storage SSM3K339R_datasheet_en_20140221.pdf?did=14950&prodName=SSM3K339R Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Produkt ist nicht verfügbar
SSM3K339R,LF SSM3K339R,LF Toshiba Semiconductor and Storage SSM3K339R_datasheet_en_20140221.pdf?did=14950&prodName=SSM3K339R Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 2698 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 25
SSM6K217FE,LF SSM6K217FE,LF Toshiba Semiconductor and Storage SSM6K217FE_datasheet_en_20140312.pdf?did=15010&prodName=SSM6K217FE Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.23 EUR
8000+ 0.22 EUR
12000+ 0.19 EUR
Mindestbestellmenge: 4000
SSM6K217FE,LF SSM6K217FE,LF Toshiba Semiconductor and Storage SSM6K217FE_datasheet_en_20140312.pdf?did=15010&prodName=SSM6K217FE Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 25332 Stücke:
Lieferzeit 21-28 Tag (e)
32+0.83 EUR
40+ 0.65 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
Mindestbestellmenge: 32
TRS12N65D,S1F TRS12N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARR SCHOTT 650V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
TRS16N65D,S1F TRS16N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARR SCHOTT 650V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
TRS20N65D,S1F TRS20N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOTTKY 650V TO247
Produkt ist nicht verfügbar
TRS24N65D,S1F TRS24N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOTTKY 650V TO247
Produkt ist nicht verfügbar
TK100S04N1L,LQ TK100S04N1L,LQ Toshiba Semiconductor and Storage TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 3166 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.42 EUR
10+ 5.33 EUR
100+ 4.24 EUR
500+ 3.59 EUR
1000+ 3.04 EUR
Mindestbestellmenge: 5
TK100S04N1L,LQ TK100S04N1L,LQ Toshiba Semiconductor and Storage TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Produkt ist nicht verfügbar
TK10A60E,S5X TK10A60E,S5X Toshiba Semiconductor and Storage TK10A60E.pdf Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
TK10A80E,S4X TK10A80E,S4X Toshiba Semiconductor and Storage TK10A80E_datasheet_en_20140304.pdf?did=14235&prodName=TK10A80E Description: MOSFET N-CH 800V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.51 EUR
50+ 4.44 EUR
100+ 3.65 EUR
Mindestbestellmenge: 5
TK10J80E,S1E TK10J80E,S1E Toshiba Semiconductor and Storage TK10J80E_datasheet_en_20140228.pdf?did=14047&prodName=TK10J80E Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.05 EUR
Mindestbestellmenge: 4
TK12A50E,S5X TK12A50E,S5X Toshiba Semiconductor and Storage TK12A50E.pdf Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
TK15S04N1L,LQ TK15S04N1L,LQ Toshiba Semiconductor and Storage TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
auf Bestellung 1790 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.72 EUR
10+ 3.05 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.64 EUR
Mindestbestellmenge: 7
TK15S04N1L,LQ TK15S04N1L,LQ Toshiba Semiconductor and Storage TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L Description: MOSFET N-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Produkt ist nicht verfügbar
TK31N60X,S1F TK31N60X,S1F Toshiba Semiconductor and Storage docget.jsp?did=14734&prodName=TK31N60X Description: MOSFET N-CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
TK31V60X,LQ TK31V60X,LQ Toshiba Semiconductor and Storage TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 23857 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.32 EUR
10+ 10.34 EUR
100+ 8.36 EUR
500+ 7.43 EUR
1000+ 6.37 EUR
Mindestbestellmenge: 3
TK31V60X,LQ TK31V60X,LQ Toshiba Semiconductor and Storage TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+5.99 EUR
Mindestbestellmenge: 2500
TK33S10N1Z,LQ TK33S10N1Z,LQ Toshiba Semiconductor and Storage TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
Produkt ist nicht verfügbar
TK39N60X,S1F TK39N60X,S1F Toshiba Semiconductor and Storage TK39N60X_datasheet_en_20140228.pdf?did=14735&prodName=TK39N60X Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.64 EUR
30+ 13.29 EUR
Mindestbestellmenge: 2
TK55S10N1,LQ TK55S10N1,LQ Toshiba Semiconductor and Storage docget.jsp?did=13952&prodName=TK55S10N1 Description: MOSFET N-CH 100V 55A DPAK
Produkt ist nicht verfügbar
TK62N60X,S1F TK62N60X,S1F Toshiba Semiconductor and Storage TK62N60X_datasheet_en_20140228.pdf?did=14635&prodName=TK62N60X Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 102 Stücke:
Lieferzeit 21-28 Tag (e)
2+25.74 EUR
30+ 20.54 EUR
Mindestbestellmenge: 2
TK65G10N1,RQ TK65G10N1,RQ Toshiba Semiconductor and Storage docget.jsp?did=14122&prodName=TK65G10N1 Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2506 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.3FU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.3FU
DF5A3.3FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
Produkt ist nicht verfügbar
DF5A3.3FU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.3FU
DF5A3.3FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
auf Bestellung 2955 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6CFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU
DF5A3.6CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM USV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6CFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU
DF5A3.6CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM USV
Produkt ist nicht verfügbar
DF5A3.6CFU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CFU
DF5A3.6CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM USV
auf Bestellung 1907 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE
DF5A3.6CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM ESV
Produkt ist nicht verfügbar
DF5A3.6CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE
DF5A3.6CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM ESV
Produkt ist nicht verfügbar
DF5A3.6CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A3.6CJE
DF5A3.6CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.8VWM ESV
Produkt ist nicht verfügbar
DF5A3.6F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F
DF5A3.6F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F
DF5A3.6F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
auf Bestellung 5878 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F
DF5A3.6F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
auf Bestellung 5878 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6FU(TE85L,F) docget.jsp?did=22250&prodName=DF5A3.6FU
DF5A3.6FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
Produkt ist nicht verfügbar
DF5A3.6FU(TE85L,F) docget.jsp?did=22250&prodName=DF5A3.6FU
DF5A3.6FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
DF5A3.6JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE
DF5A3.6JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
DF5A3.6JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE
DF5A3.6JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
DF5A3.6JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE
DF5A3.6JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
DF5A5.6LFU(TE85L,F DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU
DF5A5.6LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
Mindestbestellmenge: 3000
DF5A5.6LFU(TE85L,F DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU
DF5A5.6LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 9129 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
29+ 0.92 EUR
100+ 0.52 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 21
DF5A6.2CFU(TE85L,F DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU
DF5A6.2CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
6000+ 0.18 EUR
Mindestbestellmenge: 3000
DF5A6.2CFU(TE85L,F DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU
DF5A6.2CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 14743 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
33+ 0.81 EUR
100+ 0.46 EUR
500+ 0.3 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 25
DF5A6.2CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE
DF5A6.2CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
DF5A6.2CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE
DF5A6.2CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
DF5A6.2CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE
DF5A6.2CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
DF5A6.2F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2F
DF5A6.2F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMV
Produkt ist nicht verfügbar
DF5A6.2F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2F
DF5A6.2F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMV
Produkt ist nicht verfügbar
DF5A6.2FU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2FU
DF5A6.2FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USV
Produkt ist nicht verfügbar
DF5A6.2FU(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2FU
DF5A6.2FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USV
auf Bestellung 24 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
Mindestbestellmenge: 23
DF5A6.2JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE
DF5A6.2JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
DF5A6.2JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE
DF5A6.2JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
DF5A6.2JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE
DF5A6.2JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
DF5A6.2LJE,LM docget.jsp?did=22264&prodName=DF5A6.2LJE
DF5A6.2LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.15 EUR
8000+ 0.13 EUR
12000+ 0.11 EUR
Mindestbestellmenge: 4000
DF5A6.2LJE,LM docget.jsp?did=22264&prodName=DF5A6.2LJE
DF5A6.2LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
auf Bestellung 14821 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
37+ 0.7 EUR
100+ 0.37 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 31
DF5A6.8CFU(TE85L,F DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU
DF5A6.8CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
6000+ 0.19 EUR
Mindestbestellmenge: 3000
DF5A6.8CFU(TE85L,F DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU
DF5A6.8CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
32+ 0.84 EUR
100+ 0.48 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 24
DF5A6.8F,LF docget.jsp?type=datasheet&lang=en&pid=DF5A6.8F
DF5A6.8F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Produkt ist nicht verfügbar
DF5A6.8F,LF docget.jsp?did=3417&prodName=DF5A6.8F
DF5A6.8F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Produkt ist nicht verfügbar
SSM3K339R,LF SSM3K339R_datasheet_en_20140221.pdf?did=14950&prodName=SSM3K339R
SSM3K339R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Produkt ist nicht verfügbar
SSM3K339R,LF SSM3K339R_datasheet_en_20140221.pdf?did=14950&prodName=SSM3K339R
SSM3K339R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 2698 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 25
SSM6K217FE,LF SSM6K217FE_datasheet_en_20140312.pdf?did=15010&prodName=SSM6K217FE
SSM6K217FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.23 EUR
8000+ 0.22 EUR
12000+ 0.19 EUR
Mindestbestellmenge: 4000
SSM6K217FE,LF SSM6K217FE_datasheet_en_20140312.pdf?did=15010&prodName=SSM6K217FE
SSM6K217FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 25332 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
40+ 0.65 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
2000+ 0.23 EUR
Mindestbestellmenge: 32
TRS12N65D,S1F
TRS12N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 650V 6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
TRS16N65D,S1F
TRS16N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 650V 8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
TRS20N65D,S1F
TRS20N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 650V TO247
Produkt ist nicht verfügbar
TRS24N65D,S1F
TRS24N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 650V TO247
Produkt ist nicht verfügbar
TK100S04N1L,LQ TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L
TK100S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 3166 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.42 EUR
10+ 5.33 EUR
100+ 4.24 EUR
500+ 3.59 EUR
1000+ 3.04 EUR
Mindestbestellmenge: 5
TK100S04N1L,LQ TK100S04N1L_datasheet_en_20200624.pdf?did=14004&prodName=TK100S04N1L
TK100S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Produkt ist nicht verfügbar
TK10A60E,S5X TK10A60E.pdf
TK10A60E,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
TK10A80E,S4X TK10A80E_datasheet_en_20140304.pdf?did=14235&prodName=TK10A80E
TK10A80E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.51 EUR
50+ 4.44 EUR
100+ 3.65 EUR
Mindestbestellmenge: 5
TK10J80E,S1E TK10J80E_datasheet_en_20140228.pdf?did=14047&prodName=TK10J80E
TK10J80E,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.05 EUR
Mindestbestellmenge: 4
TK12A50E,S5X TK12A50E.pdf
TK12A50E,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
TK15S04N1L,LQ TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L
TK15S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
auf Bestellung 1790 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.72 EUR
10+ 3.05 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.64 EUR
Mindestbestellmenge: 7
TK15S04N1L,LQ TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L
TK15S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Produkt ist nicht verfügbar
TK31N60X,S1F docget.jsp?did=14734&prodName=TK31N60X
TK31N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
TK31V60X,LQ TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X
TK31V60X,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 23857 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.32 EUR
10+ 10.34 EUR
100+ 8.36 EUR
500+ 7.43 EUR
1000+ 6.37 EUR
Mindestbestellmenge: 3
TK31V60X,LQ TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X
TK31V60X,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+5.99 EUR
Mindestbestellmenge: 2500
TK33S10N1Z,LQ TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z
TK33S10N1Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
Produkt ist nicht verfügbar
TK39N60X,S1F TK39N60X_datasheet_en_20140228.pdf?did=14735&prodName=TK39N60X
TK39N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+16.64 EUR
30+ 13.29 EUR
Mindestbestellmenge: 2
TK55S10N1,LQ docget.jsp?did=13952&prodName=TK55S10N1
TK55S10N1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Produkt ist nicht verfügbar
TK62N60X,S1F TK62N60X_datasheet_en_20140228.pdf?did=14635&prodName=TK62N60X
TK62N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 102 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+25.74 EUR
30+ 20.54 EUR
Mindestbestellmenge: 2
TK65G10N1,RQ docget.jsp?did=14122&prodName=TK65G10N1
TK65G10N1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2506 Stücke:
Lieferzeit 21-28 Tag (e)
Wählen Sie Seite:   [  << Vorherige Seite ]  1 21 42 63 80 81 82 83 84 85 86 87 88 89 90 105 126 147 168 189 210 217  [ Nächste Seite >> ]