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DF5A3.6F(TE85L,F) DF5A3.6F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F Description: TVS DIODE 1VWM SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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DF5A3.6F(TE85L,F) DF5A3.6F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F Description: TVS DIODE 1VWM SMV
auf Bestellung 5878 Stücke:
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DF5A3.6F(TE85L,F) DF5A3.6F(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F Description: TVS DIODE 1VWM SMV
auf Bestellung 5878 Stücke:
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DF5A3.6FU(TE85L,F) DF5A3.6FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22250&prodName=DF5A3.6FU Description: TVS DIODE 1VWM USV
Produkt ist nicht verfügbar
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DF5A3.6FU(TE85L,F) DF5A3.6FU(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=22250&prodName=DF5A3.6FU Description: TVS DIODE 1VWM USV
auf Bestellung 12 Stücke:
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DF5A3.6JE(TE85L,F) DF5A3.6JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
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DF5A3.6JE(TE85L,F) DF5A3.6JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
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DF5A3.6JE(TE85L,F) DF5A3.6JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
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DF5A5.6LFU(TE85L,F DF5A5.6LFU(TE85L,F Toshiba Semiconductor and Storage DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU Description: TVS DIODE 3.5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.10 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
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DF5A5.6LFU(TE85L,F DF5A5.6LFU(TE85L,F Toshiba Semiconductor and Storage DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU Description: TVS DIODE 3.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 8766 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
58+0.31 EUR
121+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
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DF5A6.2CFU(TE85L,F DF5A6.2CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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DF5A6.2CFU(TE85L,F DF5A6.2CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 14042 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
58+0.30 EUR
111+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
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DF5A6.2CJE(TE85L,F DF5A6.2CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
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DF5A6.2CJE(TE85L,F DF5A6.2CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
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DF5A6.2CJE(TE85L,F DF5A6.2CJE(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
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DF5A6.2F(TE85L,F) DF5A6.2F(TE85L,F) Toshiba Semiconductor and Storage DF5A6.2F_datasheet_en_20140301.pdf?did=22248&prodName=DF5A6.2F Description: TVS DIODE 3VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Produkt ist nicht verfügbar
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DF5A6.2F(TE85L,F) DF5A6.2F(TE85L,F) Toshiba Semiconductor and Storage DF5A6.2F_datasheet_en_20140301.pdf?did=22248&prodName=DF5A6.2F Description: TVS DIODE 3VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2FU(TE85L,F) DF5A6.2FU(TE85L,F) Toshiba Semiconductor and Storage DF5A6.2FU_datasheet_en_20140301.pdf?did=22253&prodName=DF5A6.2FU Description: TVS DIODE 3VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.10 EUR
6000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2FU(TE85L,F) DF5A6.2FU(TE85L,F) Toshiba Semiconductor and Storage DF5A6.2FU_datasheet_en_20140301.pdf?did=22253&prodName=DF5A6.2FU Description: TVS DIODE 3VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 7835 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
63+0.28 EUR
120+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2JE(TE85L,F) DF5A6.2JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
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DF5A6.2JE(TE85L,F) DF5A6.2JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
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DF5A6.2JE(TE85L,F) DF5A6.2JE(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
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DF5A6.2LJE,LM DF5A6.2LJE,LM Toshiba Semiconductor and Storage DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.07 EUR
8000+0.06 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2LJE,LM DF5A6.2LJE,LM Toshiba Semiconductor and Storage DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 17243 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
90+0.20 EUR
177+0.10 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8CFU(TE85L,F DF5A6.8CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
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DF5A6.8CFU(TE85L,F DF5A6.8CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
61+0.29 EUR
111+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8F,LF DF5A6.8F,LF Toshiba Semiconductor and Storage DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F Description: TVS DIODE 5VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.07 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8F,LF DF5A6.8F,LF Toshiba Semiconductor and Storage DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F Description: TVS DIODE 5VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 5493 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
90+0.20 EUR
174+0.10 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K339R,LF SSM3K339R,LF Toshiba Semiconductor and Storage docget.jsp?did=14950&prodName=SSM3K339R Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
9000+0.10 EUR
15000+0.10 EUR
21000+0.09 EUR
30000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K339R,LF SSM3K339R,LF Toshiba Semiconductor and Storage docget.jsp?did=14950&prodName=SSM3K339R Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 42715 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
49+0.36 EUR
119+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 30
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SSM6K217FE,LF SSM6K217FE,LF Toshiba Semiconductor and Storage docget.jsp?did=15010&prodName=SSM6K217FE Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
8000+0.12 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K217FE,LF SSM6K217FE,LF Toshiba Semiconductor and Storage docget.jsp?did=15010&prodName=SSM6K217FE Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 23448 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
58+0.30 EUR
100+0.26 EUR
500+0.22 EUR
1000+0.20 EUR
2000+0.18 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
TRS12N65D,S1F TRS12N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOT 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Produkt ist nicht verfügbar
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TRS16N65D,S1F TRS16N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOT 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS20N65D,S1F TRS20N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOTTKY 650V TO247
Produkt ist nicht verfügbar
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TRS24N65D,S1F TRS24N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARR SCHOTT 650V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TK100S04N1L,LQ TK100S04N1L,LQ Toshiba Semiconductor and Storage docget.jsp?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2828 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.53 EUR
10+3.60 EUR
100+2.51 EUR
500+2.05 EUR
1000+1.90 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK100S04N1L,LQ TK100S04N1L,LQ Toshiba Semiconductor and Storage docget.jsp?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10A60E,S5X TK10A60E,S5X Toshiba Semiconductor and Storage TK10A60E.pdf Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10A80E,S4X TK10A80E,S4X Toshiba Semiconductor and Storage TK10A80E_datasheet_en_20140304.pdf?did=14235&prodName=TK10A80E Description: MOSFET N-CH 800V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10J80E,S1E TK10J80E,S1E Toshiba Semiconductor and Storage TK10J80E_datasheet_en_20140228.pdf?did=14047&prodName=TK10J80E Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.77 EUR
Mindestbestellmenge: 4
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TK12A50E,S5X TK12A50E,S5X Toshiba Semiconductor and Storage TK12A50E.pdf Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK15S04N1L,LQ TK15S04N1L,LQ Toshiba Semiconductor and Storage TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.54 EUR
10+2.27 EUR
100+1.54 EUR
500+1.23 EUR
1000+1.13 EUR
Mindestbestellmenge: 5
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TK15S04N1L,LQ TK15S04N1L,LQ Toshiba Semiconductor and Storage TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L Description: MOSFET N-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Produkt ist nicht verfügbar
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TK31N60X,S1F TK31N60X,S1F Toshiba Semiconductor and Storage TK31N60X_datasheet_en_20140228.pdf?did=14734&prodName=TK31N60X Description: MOSFET N-CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK31V60X,LQ TK31V60X,LQ Toshiba Semiconductor and Storage TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 16584 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.94 EUR
10+6.66 EUR
100+4.80 EUR
500+4.01 EUR
Mindestbestellmenge: 2
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TK31V60X,LQ TK31V60X,LQ Toshiba Semiconductor and Storage TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+4.01 EUR
Mindestbestellmenge: 2500
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TK33S10N1Z,LQ TK33S10N1Z,LQ Toshiba Semiconductor and Storage TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.10 EUR
4000+1.05 EUR
Mindestbestellmenge: 2000
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TK39N60X,S1F TK39N60X,S1F Toshiba Semiconductor and Storage docget.jsp?did=14735&prodName=TK39N60X Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.75 EUR
Mindestbestellmenge: 2
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TK55S10N1,LQ TK55S10N1,LQ Toshiba Semiconductor and Storage docget.jsp?did=13952&prodName=TK55S10N1 Description: MOSFET N-CH 100V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.94 EUR
Mindestbestellmenge: 2000
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TK62N60X,S1F TK62N60X,S1F Toshiba Semiconductor and Storage docget.jsp?did=14635&prodName=TK62N60X Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.68 EUR
30+12.60 EUR
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TK65G10N1,RQ TK65G10N1,RQ Toshiba Semiconductor and Storage docget.jsp?did=14122&prodName=TK65G10N1 Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2506 Stücke:
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TK65G10N1,RQ TK65G10N1,RQ Toshiba Semiconductor and Storage docget.jsp?did=14122&prodName=TK65G10N1 Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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TK65S04N1L,LQ TK65S04N1L,LQ Toshiba Semiconductor and Storage TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L Description: MOSFET N-CH 40V 65A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 7976 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.10 EUR
10+2.57 EUR
100+2.04 EUR
500+1.73 EUR
1000+1.47 EUR
Mindestbestellmenge: 6
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TK65S04N1L,LQ TK65S04N1L,LQ Toshiba Semiconductor and Storage TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L Description: MOSFET N-CH 40V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.39 EUR
6000+1.34 EUR
Mindestbestellmenge: 2000
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TK6A80E,S4X TK6A80E,S4X Toshiba Semiconductor and Storage docget.jsp?did=14673&prodName=TK6A80E Description: MOSFET N-CH 800V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.04 EUR
10+2.52 EUR
Mindestbestellmenge: 6
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TK7A90E,S4X TK7A90E,S4X Toshiba Semiconductor and Storage docget.jsp?did=14675&prodName=TK7A90E Description: MOSFET N-CH 900V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
10+2.19 EUR
Mindestbestellmenge: 7
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TK7J90E,S1E TK7J90E,S1E Toshiba Semiconductor and Storage TK7J90E_datasheet_en_20140304.pdf?did=14676&prodName=TK7J90E Description: MOSFET N-CH 900V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
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TK7P60W5,RVQ TK7P60W5,RVQ Toshiba Semiconductor and Storage TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5 Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK7P60W5,RVQ TK7P60W5,RVQ Toshiba Semiconductor and Storage TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5 Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A3.6F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F
DF5A3.6F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DF5A3.6F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F
DF5A3.6F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
auf Bestellung 5878 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DF5A3.6F(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6F
DF5A3.6F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM SMV
auf Bestellung 5878 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DF5A3.6FU(TE85L,F) docget.jsp?did=22250&prodName=DF5A3.6FU
DF5A3.6FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A3.6FU(TE85L,F) docget.jsp?did=22250&prodName=DF5A3.6FU
DF5A3.6FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM USV
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DF5A3.6JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE
DF5A3.6JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A3.6JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE
DF5A3.6JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A3.6JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A3.6JE
DF5A3.6JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A5.6LFU(TE85L,F DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU
DF5A5.6LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A5.6LFU(TE85L,F DF5A5.6LFU_datasheet_en_20140301.pdf?did=22260&prodName=DF5A5.6LFU
DF5A5.6LFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Part Status: Active
auf Bestellung 8766 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
58+0.31 EUR
121+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CFU(TE85L,F DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU
DF5A6.2CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CFU(TE85L,F DF5A6.2CFU_datasheet_en_20140301.pdf?did=352&prodName=DF5A6.2CFU
DF5A6.2CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 14042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
58+0.30 EUR
111+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE
DF5A6.2CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE
DF5A6.2CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2CJE(TE85L,F docget.jsp?type=datasheet&lang=en&pid=DF5A6.2CJE
DF5A6.2CJE(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2F(TE85L,F) DF5A6.2F_datasheet_en_20140301.pdf?did=22248&prodName=DF5A6.2F
DF5A6.2F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2F(TE85L,F) DF5A6.2F_datasheet_en_20140301.pdf?did=22248&prodName=DF5A6.2F
DF5A6.2F(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2FU(TE85L,F) DF5A6.2FU_datasheet_en_20140301.pdf?did=22253&prodName=DF5A6.2FU
DF5A6.2FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.10 EUR
6000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2FU(TE85L,F) DF5A6.2FU_datasheet_en_20140301.pdf?did=22253&prodName=DF5A6.2FU
DF5A6.2FU(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
auf Bestellung 7835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
63+0.28 EUR
120+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE
DF5A6.2JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE
DF5A6.2JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2JE(TE85L,F) docget.jsp?type=datasheet&lang=en&pid=DF5A6.2JE
DF5A6.2JE(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3VWM ESV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2LJE,LM DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE
DF5A6.2LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.07 EUR
8000+0.06 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.2LJE,LM DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE
DF5A6.2LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 17243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
90+0.20 EUR
177+0.10 EUR
500+0.09 EUR
1000+0.08 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8CFU(TE85L,F DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU
DF5A6.8CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8CFU(TE85L,F DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU
DF5A6.8CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
61+0.29 EUR
111+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8F,LF DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F
DF5A6.8F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DF5A6.8F,LF DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F
DF5A6.8F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 5493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
90+0.20 EUR
174+0.10 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K339R,LF docget.jsp?did=14950&prodName=SSM3K339R
SSM3K339R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
9000+0.10 EUR
15000+0.10 EUR
21000+0.09 EUR
30000+0.08 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM3K339R,LF docget.jsp?did=14950&prodName=SSM3K339R
SSM3K339R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 42715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
49+0.36 EUR
119+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K217FE,LF docget.jsp?did=15010&prodName=SSM6K217FE
SSM6K217FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.13 EUR
8000+0.12 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K217FE,LF docget.jsp?did=15010&prodName=SSM6K217FE
SSM6K217FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 23448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
58+0.30 EUR
100+0.26 EUR
500+0.22 EUR
1000+0.20 EUR
2000+0.18 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
TRS12N65D,S1F
TRS12N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOT 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS16N65D,S1F
TRS16N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOT 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS20N65D,S1F
TRS20N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 650V TO247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS24N65D,S1F
TRS24N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 650V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK100S04N1L,LQ docget.jsp?did=14004&prodName=TK100S04N1L
TK100S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.53 EUR
10+3.60 EUR
100+2.51 EUR
500+2.05 EUR
1000+1.90 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK100S04N1L,LQ docget.jsp?did=14004&prodName=TK100S04N1L
TK100S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10A60E,S5X TK10A60E.pdf
TK10A60E,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10A80E,S4X TK10A80E_datasheet_en_20140304.pdf?did=14235&prodName=TK10A80E
TK10A80E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10J80E,S1E TK10J80E_datasheet_en_20140228.pdf?did=14047&prodName=TK10J80E
TK10J80E,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.77 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK12A50E,S5X TK12A50E.pdf
TK12A50E,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK15S04N1L,LQ TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L
TK15S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.27 EUR
100+1.54 EUR
500+1.23 EUR
1000+1.13 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TK15S04N1L,LQ TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L
TK15S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK31N60X,S1F TK31N60X_datasheet_en_20140228.pdf?did=14734&prodName=TK31N60X
TK31N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK31V60X,LQ TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X
TK31V60X,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 16584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.94 EUR
10+6.66 EUR
100+4.80 EUR
500+4.01 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK31V60X,LQ TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X
TK31V60X,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+4.01 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TK33S10N1Z,LQ TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z
TK33S10N1Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.10 EUR
4000+1.05 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK39N60X,S1F docget.jsp?did=14735&prodName=TK39N60X
TK39N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK55S10N1,LQ docget.jsp?did=13952&prodName=TK55S10N1
TK55S10N1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.94 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK62N60X,S1F docget.jsp?did=14635&prodName=TK62N60X
TK62N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.68 EUR
30+12.60 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK65G10N1,RQ docget.jsp?did=14122&prodName=TK65G10N1
TK65G10N1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2506 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TK65G10N1,RQ docget.jsp?did=14122&prodName=TK65G10N1
TK65G10N1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TK65S04N1L,LQ TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L
TK65S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 7976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.10 EUR
10+2.57 EUR
100+2.04 EUR
500+1.73 EUR
1000+1.47 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TK65S04N1L,LQ TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L
TK65S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.39 EUR
6000+1.34 EUR
Mindestbestellmenge: 2000
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TK6A80E,S4X docget.jsp?did=14673&prodName=TK6A80E
TK6A80E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
10+2.52 EUR
Mindestbestellmenge: 6
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TK7A90E,S4X docget.jsp?did=14675&prodName=TK7A90E
TK7A90E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
10+2.19 EUR
Mindestbestellmenge: 7
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TK7J90E,S1E TK7J90E_datasheet_en_20140304.pdf?did=14676&prodName=TK7J90E
TK7J90E,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
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TK7P60W5,RVQ TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5
TK7P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
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TK7P60W5,RVQ TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5
TK7P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
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