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DF5A6.2LJE,LM DF5A6.2LJE,LM Toshiba Semiconductor and Storage DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.074 EUR
8000+0.059 EUR
Mindestbestellmenge: 4000
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DF5A6.2LJE,LM DF5A6.2LJE,LM Toshiba Semiconductor and Storage DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 17243 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
90+0.2 EUR
177+0.1 EUR
500+0.091 EUR
1000+0.082 EUR
Mindestbestellmenge: 59
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DF5A6.8CFU(TE85L,F DF5A6.8CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
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DF5A6.8CFU(TE85L,F DF5A6.8CFU(TE85L,F Toshiba Semiconductor and Storage DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
61+0.29 EUR
111+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
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DF5A6.8F,LF DF5A6.8F,LF Toshiba Semiconductor and Storage DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F Description: TVS DIODE 5VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.069 EUR
Mindestbestellmenge: 3000
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DF5A6.8F,LF DF5A6.8F,LF Toshiba Semiconductor and Storage DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F Description: TVS DIODE 5VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 5493 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
90+0.2 EUR
174+0.1 EUR
500+0.097 EUR
1000+0.092 EUR
Mindestbestellmenge: 59
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SSM3K339R,LF SSM3K339R,LF Toshiba Semiconductor and Storage docget.jsp?did=14950&prodName=SSM3K339R Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.1 EUR
9000+0.09 EUR
15000+0.087 EUR
21000+0.082 EUR
Mindestbestellmenge: 3000
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SSM3K339R,LF SSM3K339R,LF Toshiba Semiconductor and Storage docget.jsp?did=14950&prodName=SSM3K339R Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 23975 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
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SSM6K217FE,LF SSM6K217FE,LF Toshiba Semiconductor and Storage docget.jsp?did=15010&prodName=SSM6K217FE Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
8000+0.12 EUR
Mindestbestellmenge: 4000
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SSM6K217FE,LF SSM6K217FE,LF Toshiba Semiconductor and Storage docget.jsp?did=15010&prodName=SSM6K217FE Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 21923 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
89+0.2 EUR
100+0.18 EUR
1000+0.17 EUR
2000+0.16 EUR
Mindestbestellmenge: 67
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TRS12N65D,S1F TRS12N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOT 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Produkt ist nicht verfügbar
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TRS16N65D,S1F TRS16N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOT 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TRS20N65D,S1F TRS20N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARRAY SCHOTTKY 650V TO247
Produkt ist nicht verfügbar
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TRS24N65D,S1F TRS24N65D,S1F Toshiba Semiconductor and Storage Description: DIODE ARR SCHOTT 650V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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TK100S04N1L,LQ TK100S04N1L,LQ Toshiba Semiconductor and Storage docget.jsp?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2828 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.53 EUR
10+3.6 EUR
100+2.51 EUR
500+2.05 EUR
1000+1.9 EUR
Mindestbestellmenge: 4
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TK100S04N1L,LQ TK100S04N1L,LQ Toshiba Semiconductor and Storage docget.jsp?did=14004&prodName=TK100S04N1L Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Produkt ist nicht verfügbar
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TK10A60E,S5X TK10A60E,S5X Toshiba Semiconductor and Storage TK10A60E.pdf Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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TK10A80E,S4X TK10A80E,S4X Toshiba Semiconductor and Storage TK10A80E_datasheet_en_20140304.pdf?did=14235&prodName=TK10A80E Description: MOSFET N-CH 800V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
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TK10J80E,S1E TK10J80E,S1E Toshiba Semiconductor and Storage TK10J80E_datasheet_en_20140228.pdf?did=14047&prodName=TK10J80E Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.77 EUR
Mindestbestellmenge: 4
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TK12A50E,S5X TK12A50E,S5X Toshiba Semiconductor and Storage TK12A50E.pdf Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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TK15S04N1L,LQ TK15S04N1L,LQ Toshiba Semiconductor and Storage TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.54 EUR
10+2.27 EUR
100+1.54 EUR
500+1.23 EUR
1000+1.13 EUR
Mindestbestellmenge: 5
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TK15S04N1L,LQ TK15S04N1L,LQ Toshiba Semiconductor and Storage TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L Description: MOSFET N-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Produkt ist nicht verfügbar
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TK31N60X,S1F TK31N60X,S1F Toshiba Semiconductor and Storage docget.jsp?did=14734&prodName=TK31N60X Description: MOSFET N-CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.09 EUR
Mindestbestellmenge: 2
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TK31V60X,LQ TK31V60X,LQ Toshiba Semiconductor and Storage TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 16584 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.94 EUR
10+6.66 EUR
100+4.8 EUR
500+4.01 EUR
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TK31V60X,LQ TK31V60X,LQ Toshiba Semiconductor and Storage TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+4.01 EUR
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TK33S10N1Z,LQ TK33S10N1Z,LQ Toshiba Semiconductor and Storage TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.1 EUR
4000+1.05 EUR
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TK39N60X,S1F TK39N60X,S1F Toshiba Semiconductor and Storage docget.jsp?did=14735&prodName=TK39N60X Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.17 EUR
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TK55S10N1,LQ TK55S10N1,LQ Toshiba Semiconductor and Storage docget.jsp?did=13952&prodName=TK55S10N1 Description: MOSFET N-CH 100V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.94 EUR
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TK62N60X,S1F TK62N60X,S1F Toshiba Semiconductor and Storage docget.jsp?did=14635&prodName=TK62N60X Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
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TK65G10N1,RQ TK65G10N1,RQ Toshiba Semiconductor and Storage docget.jsp?did=14122&prodName=TK65G10N1 Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2506 Stücke:
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TK65G10N1,RQ TK65G10N1,RQ Toshiba Semiconductor and Storage docget.jsp?did=14122&prodName=TK65G10N1 Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2000 Stücke:
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TK65S04N1L,LQ TK65S04N1L,LQ Toshiba Semiconductor and Storage TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L Description: MOSFET N-CH 40V 65A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 7976 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.1 EUR
10+2.57 EUR
100+2.04 EUR
500+1.73 EUR
1000+1.47 EUR
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TK65S04N1L,LQ TK65S04N1L,LQ Toshiba Semiconductor and Storage TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L Description: MOSFET N-CH 40V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.39 EUR
6000+1.34 EUR
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TK6A80E,S4X TK6A80E,S4X Toshiba Semiconductor and Storage docget.jsp?did=14673&prodName=TK6A80E Description: MOSFET N-CH 800V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.04 EUR
10+2.52 EUR
Mindestbestellmenge: 6
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TK7A90E,S4X TK7A90E,S4X Toshiba Semiconductor and Storage docget.jsp?did=14675&prodName=TK7A90E Description: MOSFET N-CH 900V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
10+2.19 EUR
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TK7J90E,S1E TK7J90E,S1E Toshiba Semiconductor and Storage TK7J90E_datasheet_en_20140304.pdf?did=14676&prodName=TK7J90E Description: MOSFET N-CH 900V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
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TK7P60W5,RVQ TK7P60W5,RVQ Toshiba Semiconductor and Storage TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5 Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
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TK7P60W5,RVQ TK7P60W5,RVQ Toshiba Semiconductor and Storage TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5 Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
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TK7S10N1Z,LQ TK7S10N1Z,LQ Toshiba Semiconductor and Storage TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6874 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.38 EUR
10+1.85 EUR
100+1.3 EUR
500+1.1 EUR
1000+1.01 EUR
Mindestbestellmenge: 8
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TK7S10N1Z,LQ TK7S10N1Z,LQ Toshiba Semiconductor and Storage TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.92 EUR
4000+0.9 EUR
Mindestbestellmenge: 2000
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TK90S06N1L,LQ TK90S06N1L,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.36 EUR
10+2.79 EUR
100+2.22 EUR
500+1.88 EUR
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TK90S06N1L,LQ TK90S06N1L,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
Produkt ist nicht verfügbar
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TK9A90E,S4X TK9A90E,S4X Toshiba Semiconductor and Storage docget.jsp?did=14236&prodName=TK9A90E Description: MOSFET N-CH 900V 9A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.07 EUR
Mindestbestellmenge: 4
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TK9J90E,S1E TK9J90E,S1E Toshiba Semiconductor and Storage docget.jsp?did=14044&prodName=TK9J90E Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1721 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.42 EUR
25+3.49 EUR
100+3 EUR
500+2.46 EUR
1000+2.17 EUR
Mindestbestellmenge: 4
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TPH1110ENH,L1Q TPH1110ENH,L1Q Toshiba Semiconductor and Storage TPH1110ENH_datasheet_en_20140225.pdf?did=14594&prodName=TPH1110ENH Description: MOSFET N-CH 200V 7.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Produkt ist nicht verfügbar
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TPH1110ENH,L1Q TPH1110ENH,L1Q Toshiba Semiconductor and Storage TPH1110ENH_datasheet_en_20140225.pdf?did=14594&prodName=TPH1110ENH Description: MOSFET N-CH 200V 7.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Produkt ist nicht verfügbar
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TPH2010FNH,L1Q TPH2010FNH,L1Q Toshiba Semiconductor and Storage TPH2010FNH_datasheet_en_20140225.pdf?did=14595&prodName=TPH2010FNH Description: MOSFET N-CH 250V 5.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 8823 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
10+2.2 EUR
100+1.49 EUR
500+1.19 EUR
1000+1.09 EUR
2000+1.01 EUR
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TPH2010FNH,L1Q TPH2010FNH,L1Q Toshiba Semiconductor and Storage TPH2010FNH_datasheet_en_20140225.pdf?did=14595&prodName=TPH2010FNH Description: MOSFET N-CH 250V 5.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.96 EUR
Mindestbestellmenge: 5000
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TPH5900CNH,L1Q TPH5900CNH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14559&prodName=TPH5900CNH Description: MOSFET N-CH 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 6458 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
14+1.35 EUR
100+1.03 EUR
500+0.83 EUR
1000+0.73 EUR
Mindestbestellmenge: 9
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TPH5900CNH,L1Q TPH5900CNH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14559&prodName=TPH5900CNH Description: MOSFET N-CH 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.61 EUR
Mindestbestellmenge: 5000
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TPN1110ENH,L1Q TPN1110ENH,L1Q Toshiba Semiconductor and Storage TPN1110ENH_datasheet_en_20140227.pdf?did=14596&prodName=TPN1110ENH Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 29788 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.59 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.11 EUR
2000+1.07 EUR
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TPN1110ENH,L1Q TPN1110ENH,L1Q Toshiba Semiconductor and Storage TPN1110ENH_datasheet_en_20140227.pdf?did=14596&prodName=TPN1110ENH Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.02 EUR
Mindestbestellmenge: 5000
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TPN2010FNH,L1Q TPN2010FNH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14597&prodName=TPN2010FNH Description: MOSFET N-CH 250V 5.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 4528 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.27 EUR
10+2.19 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.12 EUR
2000+1.06 EUR
Mindestbestellmenge: 6
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TPN2010FNH,L1Q TPN2010FNH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14597&prodName=TPN2010FNH Description: MOSFET N-CH 250V 5.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Produkt ist nicht verfügbar
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TPN5900CNH,L1Q TPN5900CNH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14560&prodName=TPN5900CNH Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Produkt ist nicht verfügbar
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TPN5900CNH,L1Q TPN5900CNH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14560&prodName=TPN5900CNH Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Produkt ist nicht verfügbar
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2SA1943N(S1,E,S) 2SA1943N(S1,E,S) Toshiba Semiconductor and Storage 2SA1943N_datasheet_en_20150512.pdf?did=13908&prodName=2SA1943N Description: TRANS PNP 230V 15A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 846 Stücke:
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4+5.47 EUR
25+3.09 EUR
100+2.51 EUR
500+2.06 EUR
Mindestbestellmenge: 4
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TK31E60X,S1X TK31E60X,S1X Toshiba Semiconductor and Storage TK31E60X_datasheet_en_20140228.pdf?did=14963&prodName=TK31E60X Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.73 EUR
50+6.92 EUR
Mindestbestellmenge: 3
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TC62D723FNG,C,EL TC62D723FNG,C,EL Toshiba Semiconductor and Storage TC62D723FNG_datasheet_en_20130918.pdf?did=12811&prodName=TC62D723FNG Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 7081 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.66 EUR
10+4.96 EUR
25+4.26 EUR
100+3.47 EUR
250+3.07 EUR
500+2.83 EUR
1000+2.63 EUR
Mindestbestellmenge: 3
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TC62D748CFNAG(CEBH TC62D748CFNAG(CEBH Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC62D748CFNAG Description: IC LED DRVR CONST CURR 24-SSOP
auf Bestellung 3726 Stücke:
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DF5A6.2LJE,LM DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE
DF5A6.2LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.074 EUR
8000+0.059 EUR
Mindestbestellmenge: 4000
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DF5A6.2LJE,LM DF5A6.2LJE_datasheet_en_20140301.pdf?did=22264&prodName=DF5A6.2LJE
DF5A6.2LJE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.9V
Power Line Protection: No
auf Bestellung 17243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
90+0.2 EUR
177+0.1 EUR
500+0.091 EUR
1000+0.082 EUR
Mindestbestellmenge: 59
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DF5A6.8CFU(TE85L,F DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU
DF5A6.8CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.12 EUR
Mindestbestellmenge: 3000
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DF5A6.8CFU(TE85L,F DF5A6.8CFU_datasheet_en_20140301.pdf?did=354&prodName=DF5A6.8CFU
DF5A6.8CFU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM USV
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 23pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: USV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
61+0.29 EUR
111+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
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DF5A6.8F,LF DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F
DF5A6.8F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.069 EUR
Mindestbestellmenge: 3000
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DF5A6.8F,LF DF5A6.8F_datasheet_en_20140301.pdf?did=3417&prodName=DF5A6.8F
DF5A6.8F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
auf Bestellung 5493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
90+0.2 EUR
174+0.1 EUR
500+0.097 EUR
1000+0.092 EUR
Mindestbestellmenge: 59
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SSM3K339R,LF docget.jsp?did=14950&prodName=SSM3K339R
SSM3K339R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.1 EUR
9000+0.09 EUR
15000+0.087 EUR
21000+0.082 EUR
Mindestbestellmenge: 3000
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SSM3K339R,LF docget.jsp?did=14950&prodName=SSM3K339R
SSM3K339R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 23975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 31
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SSM6K217FE,LF docget.jsp?did=15010&prodName=SSM6K217FE
SSM6K217FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.13 EUR
8000+0.12 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6K217FE,LF docget.jsp?did=15010&prodName=SSM6K217FE
SSM6K217FE,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 1.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 195mOhm @ 1A, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: ES6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.2 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 21923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
89+0.2 EUR
100+0.18 EUR
1000+0.17 EUR
2000+0.16 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
TRS12N65D,S1F
TRS12N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOT 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 6
Voltage Coupled to Current - Reverse Leakage @ Vr: 650
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS16N65D,S1F
TRS16N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOT 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS20N65D,S1F
TRS20N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SCHOTTKY 650V TO247
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TRS24N65D,S1F
TRS24N65D,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 650V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK100S04N1L,LQ docget.jsp?did=14004&prodName=TK100S04N1L
TK100S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
auf Bestellung 2828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.53 EUR
10+3.6 EUR
100+2.51 EUR
500+2.05 EUR
1000+1.9 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK100S04N1L,LQ docget.jsp?did=14004&prodName=TK100S04N1L
TK100S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10A60E,S5X TK10A60E.pdf
TK10A60E,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10A80E,S4X TK10A80E_datasheet_en_20140304.pdf?did=14235&prodName=TK10A80E
TK10A80E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 10A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10J80E,S1E TK10J80E_datasheet_en_20140228.pdf?did=14047&prodName=TK10J80E
TK10J80E,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.77 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK12A50E,S5X TK12A50E.pdf
TK12A50E,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 500V 12A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK15S04N1L,LQ TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L
TK15S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.27 EUR
100+1.54 EUR
500+1.23 EUR
1000+1.13 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TK15S04N1L,LQ TK15S04N1L_datasheet_en_20200624.pdf?did=14571&prodName=TK15S04N1L
TK15S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK31N60X,S1F docget.jsp?did=14734&prodName=TK31N60X
TK31N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.09 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK31V60X,LQ TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X
TK31V60X,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 16584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.94 EUR
10+6.66 EUR
100+4.8 EUR
500+4.01 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK31V60X,LQ TK31V60X_datasheet_en_20140228.pdf?did=14964&prodName=TK31V60X
TK31V60X,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 9.4A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+4.01 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TK33S10N1Z,LQ TK33S10N1Z_datasheet_en_20200624.pdf?did=15152&prodName=TK33S10N1Z
TK33S10N1Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.1 EUR
4000+1.05 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK39N60X,S1F docget.jsp?did=14735&prodName=TK39N60X
TK39N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12.5A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.17 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK55S10N1,LQ docget.jsp?did=13952&prodName=TK55S10N1
TK55S10N1,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.94 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK62N60X,S1F docget.jsp?did=14635&prodName=TK62N60X
TK62N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.68 EUR
30+12.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK65G10N1,RQ docget.jsp?did=14122&prodName=TK65G10N1
TK65G10N1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2506 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TK65G10N1,RQ docget.jsp?did=14122&prodName=TK65G10N1
TK65G10N1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TK65S04N1L,LQ TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L
TK65S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 7976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.1 EUR
10+2.57 EUR
100+2.04 EUR
500+1.73 EUR
1000+1.47 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TK65S04N1L,LQ TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L
TK65S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.39 EUR
6000+1.34 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK6A80E,S4X docget.jsp?did=14673&prodName=TK6A80E
TK6A80E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
10+2.52 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TK7A90E,S4X docget.jsp?did=14675&prodName=TK7A90E
TK7A90E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
10+2.19 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TK7J90E,S1E TK7J90E_datasheet_en_20140304.pdf?did=14676&prodName=TK7J90E
TK7J90E,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK7P60W5,RVQ TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5
TK7P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK7P60W5,RVQ TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5
TK7P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK7S10N1Z,LQ TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z
TK7S10N1Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
10+1.85 EUR
100+1.3 EUR
500+1.1 EUR
1000+1.01 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TK7S10N1Z,LQ TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z
TK7S10N1Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.92 EUR
4000+0.9 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK90S06N1L,LQ
TK90S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.79 EUR
100+2.22 EUR
500+1.88 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TK90S06N1L,LQ
TK90S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK9A90E,S4X docget.jsp?did=14236&prodName=TK9A90E
TK9A90E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 9A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.07 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK9J90E,S1E docget.jsp?did=14044&prodName=TK9J90E
TK9J90E,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.42 EUR
25+3.49 EUR
100+3 EUR
500+2.46 EUR
1000+2.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TPH1110ENH,L1Q TPH1110ENH_datasheet_en_20140225.pdf?did=14594&prodName=TPH1110ENH
TPH1110ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH1110ENH,L1Q TPH1110ENH_datasheet_en_20140225.pdf?did=14594&prodName=TPH1110ENH
TPH1110ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPH2010FNH,L1Q TPH2010FNH_datasheet_en_20140225.pdf?did=14595&prodName=TPH2010FNH
TPH2010FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 8823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
10+2.2 EUR
100+1.49 EUR
500+1.19 EUR
1000+1.09 EUR
2000+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
TPH2010FNH,L1Q TPH2010FNH_datasheet_en_20140225.pdf?did=14595&prodName=TPH2010FNH
TPH2010FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.96 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPH5900CNH,L1Q docget.jsp?did=14559&prodName=TPH5900CNH
TPH5900CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 6458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
14+1.35 EUR
100+1.03 EUR
500+0.83 EUR
1000+0.73 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TPH5900CNH,L1Q docget.jsp?did=14559&prodName=TPH5900CNH
TPH5900CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.61 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPN1110ENH,L1Q TPN1110ENH_datasheet_en_20140227.pdf?did=14596&prodName=TPN1110ENH
TPN1110ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 29788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.59 EUR
10+2.32 EUR
100+1.58 EUR
500+1.26 EUR
1000+1.11 EUR
2000+1.07 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TPN1110ENH,L1Q TPN1110ENH_datasheet_en_20140227.pdf?did=14596&prodName=TPN1110ENH
TPN1110ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.02 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPN2010FNH,L1Q docget.jsp?did=14597&prodName=TPN2010FNH
TPN2010FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 4528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.19 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.12 EUR
2000+1.06 EUR
Mindestbestellmenge: 6
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TPN2010FNH,L1Q docget.jsp?did=14597&prodName=TPN2010FNH
TPN2010FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Produkt ist nicht verfügbar
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TPN5900CNH,L1Q docget.jsp?did=14560&prodName=TPN5900CNH
TPN5900CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN5900CNH,L1Q docget.jsp?did=14560&prodName=TPN5900CNH
TPN5900CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1943N(S1,E,S) 2SA1943N_datasheet_en_20150512.pdf?did=13908&prodName=2SA1943N
2SA1943N(S1,E,S)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 15A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
auf Bestellung 846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.47 EUR
25+3.09 EUR
100+2.51 EUR
500+2.06 EUR
Mindestbestellmenge: 4
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TK31E60X,S1X TK31E60X_datasheet_en_20140228.pdf?did=14963&prodName=TK31E60X
TK31E60X,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.73 EUR
50+6.92 EUR
Mindestbestellmenge: 3
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TC62D723FNG,C,EL TC62D723FNG_datasheet_en_20130918.pdf?did=12811&prodName=TC62D723FNG
TC62D723FNG,C,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 7081 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.66 EUR
10+4.96 EUR
25+4.26 EUR
100+3.47 EUR
250+3.07 EUR
500+2.83 EUR
1000+2.63 EUR
Mindestbestellmenge: 3
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TC62D748CFNAG(CEBH docget.jsp?type=datasheet&lang=en&pid=TC62D748CFNAG
TC62D748CFNAG(CEBH
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR CONST CURR 24-SSOP
auf Bestellung 3726 Stücke:
Lieferzeit 10-14 Tag (e)
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