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TLP290-4(TP,E TLP290-4(TP,E Toshiba Semiconductor and Storage docget.jsp?did=12855&prodName=TLP290-4 Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 5116 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.19 EUR
10+2.26 EUR
100+1.7 EUR
500+1.46 EUR
1000+1.38 EUR
Mindestbestellmenge: 7 Stücke
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TLP291(BLL-TP,SE TLP291(BLL-TP,SE Toshiba Semiconductor and Storage docget.jsp?did=14152&prodName=TLP291(SE Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 19304 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
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TLP291(BL-TP,SE TLP291(BL-TP,SE Toshiba Semiconductor and Storage docget.jsp?did=14152&prodName=TLP291(SE Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 20595 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
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TLP291(GB-TP,SE TLP291(GB-TP,SE Toshiba Semiconductor and Storage docget.jsp?did=14152&prodName=TLP291(SE Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 461802 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
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TLP291(GRH-TP,SE TLP291(GRH-TP,SE Toshiba Semiconductor and Storage docget.jsp?did=14152&prodName=TLP291(SE Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4478 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
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TLP291(GRL-TP,SE TLP291(GRL-TP,SE Toshiba Semiconductor and Storage docget.jsp?did=14152&prodName=TLP291(SE Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 22389 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
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TLP291(GR-TP,SE TLP291(GR-TP,SE Toshiba Semiconductor and Storage docget.jsp?did=14152&prodName=TLP291(SE Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 51629 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
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TLP291(TP,SE TLP291(TP,SE Toshiba Semiconductor and Storage docget.jsp?did=14152&prodName=TLP291(SE Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 26332 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
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TLP291(YH-TP,SE TLP291(YH-TP,SE Toshiba Semiconductor and Storage docget.jsp?did=14152&prodName=TLP291(SE Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1701 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
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TLP291(Y-TP,SE TLP291(Y-TP,SE Toshiba Semiconductor and Storage docget.jsp?did=14152&prodName=TLP291(SE Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 17839 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
Mindestbestellmenge: 22 Stücke
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TLP291-4(GB-TP,E) TLP291-4(GB-TP,E) Toshiba Semiconductor and Storage TLP291-4_datasheet_en_20191129.pdf?did=12858&prodName=TLP291-4 Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 113716 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.92 EUR
11+2.07 EUR
100+1.56 EUR
500+1.33 EUR
1000+1.26 EUR
Mindestbestellmenge: 8 Stücke
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TLP291-4(TP,E TLP291-4(TP,E Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TLP291-4 Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
auf Bestellung 3970 Stücke:
Lieferzeit 10-14 Tag (e)
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TLP292(BL-TPL,E TLP292(BL-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14425&prodName=TLP292 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2725 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.13 EUR
27+0.79 EUR
100+0.57 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 19 Stücke
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TLP292(GB-TPL,E TLP292(GB-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14425&prodName=TLP292 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 62494 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.13 EUR
27+0.79 EUR
100+0.57 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 19 Stücke
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TLP292(TPL,E TLP292(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14425&prodName=TLP292 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 73527 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.13 EUR
27+0.79 EUR
100+0.57 EUR
500+0.48 EUR
1000+0.44 EUR
Mindestbestellmenge: 19 Stücke
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TLP293(BLL-TPL,E TLP293(BLL-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 500µA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 15185 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.07 EUR
29+0.73 EUR
100+0.52 EUR
500+0.43 EUR
1000+0.4 EUR
Mindestbestellmenge: 20 Stücke
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TLP293(BL-TPL,E TLP293(BL-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 17276 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.07 EUR
29+0.73 EUR
100+0.52 EUR
500+0.43 EUR
1000+0.4 EUR
Mindestbestellmenge: 20 Stücke
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TLP293(GB-TPL,E TLP293(GB-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 67142 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.07 EUR
29+0.73 EUR
100+0.52 EUR
500+0.43 EUR
1000+0.4 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLP293(GRH-TPL,E TLP293(GRH-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 500µA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1326 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.07 EUR
29+0.73 EUR
100+0.52 EUR
500+0.43 EUR
1000+0.4 EUR
Mindestbestellmenge: 20 Stücke
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TLP293(GRL-TPL,E TLP293(GRL-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 500µA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 32124 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.07 EUR
29+0.73 EUR
100+0.52 EUR
500+0.43 EUR
1000+0.4 EUR
Mindestbestellmenge: 20 Stücke
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TLP293(GR-TPL,E TLP293(GR-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 95227 Stücke:
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20+1.07 EUR
29+0.73 EUR
100+0.52 EUR
500+0.43 EUR
1000+0.4 EUR
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TLP293(TPL,E TLP293(TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 15999 Stücke:
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29+0.73 EUR
100+0.52 EUR
500+0.43 EUR
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TLP293(YH-TPL,E TLP293(YH-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 75% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 150% @ 500µA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1593 Stücke:
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30+0.71 EUR
100+0.51 EUR
500+0.43 EUR
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TLP293(Y-TPL,E TLP293(Y-TPL,E Toshiba Semiconductor and Storage docget.jsp?did=14419&prodName=TLP293 Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3229 Stücke:
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30+0.71 EUR
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500+0.43 EUR
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TLP155E(TPL,E TLP155E(TPL,E Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TLP155E Description: PHOTOCOUPLER GATE DRIVE SO6
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TLP290-4(GB-TP,E TLP290-4(GB-TP,E Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TLP290-4 Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
auf Bestellung 3698 Stücke:
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TLP291-4(TP,E TLP291-4(TP,E Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TLP291-4 Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
auf Bestellung 3970 Stücke:
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TK100A06N1,S4X TK100A06N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13458&prodName=TK100A06N1 Description: MOSFET N-CH 60V 100A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
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3+7.71 EUR
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TK100A08N1,S4X TK100A08N1,S4X Toshiba Semiconductor and Storage TK100A08N1_datasheet_en_20140128.pdf?did=12752&prodName=TK100A08N1 Description: MOSFET N-CH 80V 100A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
Produkt ist nicht verfügbar
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TK100A10N1,S4X TK100A10N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=12864&prodName=TK100A10N1 Description: MOSFET N-CH 100V 100A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
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TK11A65W,S5X TK11A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=14259&prodName=TK11A65W Description: MOSFET N-CH 650V 11.1A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 450µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 27 Stücke:
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4+5.4 EUR
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TK14A65W,S5X TK14A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=14179&prodName=TK14A65W Description: MOSFET N-CH 650V 13.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 40 Stücke:
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4+6.51 EUR
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TK14A65W5,S5X TK14A65W5,S5X Toshiba Semiconductor and Storage docget.jsp?did=14522&prodName=TK14A65W5 Description: MOSFET N-CH 650V 13.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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TK14C65W,S1Q TK14C65W,S1Q Toshiba Semiconductor and Storage docget.jsp?did=14524&prodName=TK14C65W Description: MOSFET N-CH 650V 13.7A I2PAK
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TK14C65W5,S1Q TK14C65W5,S1Q Toshiba Semiconductor and Storage docget.jsp?did=14523&prodName=TK14C65W5 Description: MOSFET N-CH 650V 13.7A I2PAK
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TK14E65W,S1X TK14E65W,S1X Toshiba Semiconductor and Storage docget.jsp?did=14525&prodName=TK14E65W Description: MOSFET N-CH 650V 13.7A TO220
auf Bestellung 48 Stücke:
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4+6.78 EUR
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TK14N65W,S1F TK14N65W,S1F Toshiba Semiconductor and Storage docget.jsp?did=14507&prodName=TK14N65W Description: MOSFET N-CH 650V 13.7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
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TK20A60W5,S5VX TK20A60W5,S5VX Toshiba Semiconductor and Storage docget.jsp?did=14491&prodName=TK20A60W5 Description: MOSFET N-CH 600V 20A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 22 Stücke:
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3+8.08 EUR
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TK22A10N1,S4X TK22A10N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=12792&prodName=TK22A10N1 Description: MOSFET N-CH 100V 22A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.97 EUR
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TK30A06N1,S4X TK30A06N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13190&prodName=TK30A06N1 Description: MOSFET N-CH 60V 30A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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TK31N60W5,S1VF TK31N60W5,S1VF Toshiba Semiconductor and Storage docget.jsp?did=14531&prodName=TK31N60W5 Description: MOSFET N-CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 23 Stücke:
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2+16.67 EUR
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TK32A12N1,S4X TK32A12N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13563&prodName=TK32A12N1 Description: MOSFET N-CH 120V 32A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.5 EUR
Mindestbestellmenge: 6 Stücke
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TK34A10N1,S4X TK34A10N1,S4X Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK34A10N1 Description: MOSFET N-CH 100V 34A TO-220
auf Bestellung 120 Stücke:
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TK35A08N1,S4X TK35A08N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13147&prodName=TK35A08N1 Description: MOSFET N-CH 80V 35A TO220SIS
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.12 EUR
12+1.89 EUR
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TK35A65W,S5X TK35A65W,S5X Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK35A65W Description: MOSFET N-CH 650V 35A TO-220
auf Bestellung 88 Stücke:
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TK35N65W,S1F TK35N65W,S1F Toshiba Semiconductor and Storage docget.jsp?did=14511&prodName=TK35N65W Description: MOSFET N-CH 650V 35A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 2.1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK35N65W5,S1F TK35N65W5,S1F Toshiba Semiconductor and Storage docget.jsp?did=14535&prodName=TK35N65W5 Description: MOSFET N-CH 650V 35A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.55 EUR
30+10.28 EUR
Mindestbestellmenge: 2 Stücke
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TK40A06N1,S4X TK40A06N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13461&prodName=TK40A06N1 Description: MOSFET N-CH 60V 40A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 115 Stücke:
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7+3.03 EUR
50+1.44 EUR
100+1.29 EUR
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TK40A10N1,S4X TK40A10N1,S4X Toshiba Semiconductor and Storage TK40A10N1_datasheet_en_20140213.pdf?did=11927&prodName=TK40A10N1 Description: MOSFET N-CH 100V 40A TO220SIS
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 35W (Tc)
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.86 EUR
10+3.13 EUR
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TK42A12N1,S4X TK42A12N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13541&prodName=TK42A12N1 Description: MOSFET N-CH 120V 42A TO220SIS
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
auf Bestellung 184 Stücke:
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6+3.72 EUR
50+2.07 EUR
100+1.86 EUR
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TK56A12N1,S4X TK56A12N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13564&prodName=TK56A12N1 Description: MOSFET N-CH 120V 56A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.82 EUR
50+2.92 EUR
100+2.63 EUR
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TK58A06N1,S4X TK58A06N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13211&prodName=TK58A06N1 Description: MOSFET N-CH 60V 58A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 46 Stücke:
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9+2.59 EUR
10+2.33 EUR
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TK65A10N1,S4X TK65A10N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=11932&prodName=TK65A10N1 Description: MOSFET N-CH 100V 65A TO220SIS
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
auf Bestellung 9 Stücke:
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5+5.19 EUR
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TK72A12N1,S4X TK72A12N1,S4X Toshiba Semiconductor and Storage docget.jsp?did=13543&prodName=TK72A12N1 Description: MOSFET N-CH 120V 72A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 50 Stücke:
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4+6.31 EUR
10+5.66 EUR
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TPH1110FNH,L1Q TPH1110FNH,L1Q Toshiba Semiconductor and Storage TPH1110FNH_datasheet_en_20140225.pdf?did=14411&prodName=TPH1110FNH Description: MOSFET N-CH 250V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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5000+1.42 EUR
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TPH1R403NL,L1Q TPH1R403NL,L1Q Toshiba Semiconductor and Storage TPH1R403NL_datasheet_en_20191030.pdf?did=14296&prodName=TPH1R403NL Description: MOSFET N-CH 30V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 64W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TPH3300CNH,L1Q TPH3300CNH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14397&prodName=TPH3300CNH Description: MOSFET N-CH 150V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
auf Bestellung 30000 Stücke:
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5000+0.89 EUR
10000+0.84 EUR
15000+0.82 EUR
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TPH3R203NL,L1Q TPH3R203NL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14426&prodName=TPH3R203NL Description: MOSFET N-CH 30V 47A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 23.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Produkt ist nicht verfügbar
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TPH6400ENH,L1Q TPH6400ENH,L1Q Toshiba Semiconductor and Storage TPH6400ENH_datasheet_en_20140227.pdf?did=14398&prodName=TPH6400ENH Description: MOSFET N-CH 200V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 10000 Stücke:
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5000+1.39 EUR
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TPHR9003NL,L1Q TPHR9003NL,L1Q Toshiba Semiconductor and Storage TPHR9003NL_datasheet_en_20191018.pdf?did=13936&prodName=TPHR9003NL Description: MOSFET N-CH 30V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TLP290-4(TP,E docget.jsp?did=12855&prodName=TLP290-4
TLP290-4(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 5116 Stücke:
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AnzahlPrivatkunde
7+3.19 EUR
10+2.26 EUR
100+1.7 EUR
500+1.46 EUR
1000+1.38 EUR
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TLP291(BLL-TP,SE docget.jsp?did=14152&prodName=TLP291(SE
TLP291(BLL-TP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 19304 Stücke:
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AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
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TLP291(BL-TP,SE docget.jsp?did=14152&prodName=TLP291(SE
TLP291(BL-TP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 20595 Stücke:
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AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
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TLP291(GB-TP,SE docget.jsp?did=14152&prodName=TLP291(SE
TLP291(GB-TP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 461802 Stücke:
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AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
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TLP291(GRH-TP,SE docget.jsp?did=14152&prodName=TLP291(SE
TLP291(GRH-TP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 4478 Stücke:
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AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
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TLP291(GRL-TP,SE docget.jsp?did=14152&prodName=TLP291(SE
TLP291(GRL-TP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 22389 Stücke:
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AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
1000+0.37 EUR
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TLP291(GR-TP,SE docget.jsp?did=14152&prodName=TLP291(SE
TLP291(GR-TP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 51629 Stücke:
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AnzahlPrivatkunde
22+0.96 EUR
32+0.67 EUR
100+0.48 EUR
500+0.39 EUR
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TLP291(TP,SE docget.jsp?did=14152&prodName=TLP291(SE
TLP291(TP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TLP291(YH-TP,SE docget.jsp?did=14152&prodName=TLP291(SE
TLP291(YH-TP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 75% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1701 Stücke:
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TLP291(Y-TP,SE docget.jsp?did=14152&prodName=TLP291(SE
TLP291(Y-TP,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 17839 Stücke:
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TLP291-4(GB-TP,E) TLP291-4_datasheet_en_20191129.pdf?did=12858&prodName=TLP291-4
TLP291-4(GB-TP,E)
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 16-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 4
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 113716 Stücke:
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8+2.92 EUR
11+2.07 EUR
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TLP291-4(TP,E docget.jsp?type=datasheet&lang=en&pid=TLP291-4
TLP291-4(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
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TLP292(BL-TPL,E docget.jsp?did=14425&prodName=TLP292
TLP292(BL-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2725 Stücke:
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19+1.13 EUR
27+0.79 EUR
100+0.57 EUR
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TLP292(GB-TPL,E docget.jsp?did=14425&prodName=TLP292
TLP292(GB-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 62494 Stücke:
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TLP292(TPL,E docget.jsp?did=14425&prodName=TLP292
TLP292(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 73527 Stücke:
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19+1.13 EUR
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TLP293(BLL-TPL,E docget.jsp?did=14419&prodName=TLP293
TLP293(BLL-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 500µA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 15185 Stücke:
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20+1.07 EUR
29+0.73 EUR
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TLP293(BL-TPL,E docget.jsp?did=14419&prodName=TLP293
TLP293(BL-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 17276 Stücke:
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20+1.07 EUR
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TLP293(GB-TPL,E docget.jsp?did=14419&prodName=TLP293
TLP293(GB-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 67142 Stücke:
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20+1.07 EUR
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TLP293(GRH-TPL,E docget.jsp?did=14419&prodName=TLP293
TLP293(GRH-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 500µA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1326 Stücke:
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20+1.07 EUR
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TLP293(GRL-TPL,E docget.jsp?did=14419&prodName=TLP293
TLP293(GRL-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 500µA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 32124 Stücke:
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20+1.07 EUR
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TLP293(GR-TPL,E docget.jsp?did=14419&prodName=TLP293
TLP293(GR-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 95227 Stücke:
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20+1.07 EUR
29+0.73 EUR
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TLP293(TPL,E docget.jsp?did=14419&prodName=TLP293
TLP293(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 15999 Stücke:
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AnzahlPrivatkunde
20+1.07 EUR
29+0.73 EUR
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TLP293(YH-TPL,E docget.jsp?did=14419&prodName=TLP293
TLP293(YH-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 75% @ 500µA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 150% @ 500µA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1593 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.05 EUR
30+0.71 EUR
100+0.51 EUR
500+0.43 EUR
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TLP293(Y-TPL,E docget.jsp?did=14419&prodName=TLP293
TLP293(Y-TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 150% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3229 Stücke:
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AnzahlPrivatkunde
20+1.05 EUR
30+0.71 EUR
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TLP155E(TPL,E docget.jsp?type=datasheet&lang=en&pid=TLP155E
TLP155E(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER GATE DRIVE SO6
auf Bestellung 5900 Stücke:
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TLP290-4(GB-TP,E docget.jsp?type=datasheet&lang=en&pid=TLP290-4
TLP290-4(GB-TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
auf Bestellung 3698 Stücke:
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TLP291-4(TP,E docget.jsp?type=datasheet&lang=en&pid=TLP291-4
TLP291-4(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 2.5KV 4CH TRANS 16-SO
auf Bestellung 3970 Stücke:
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TK100A06N1,S4X docget.jsp?did=13458&prodName=TK100A06N1
TK100A06N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
auf Bestellung 16 Stücke:
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AnzahlPrivatkunde
3+7.71 EUR
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TK100A08N1,S4X TK100A08N1_datasheet_en_20140128.pdf?did=12752&prodName=TK100A08N1
TK100A08N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 100A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 40 V
Produkt ist nicht verfügbar
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TK100A10N1,S4X docget.jsp?did=12864&prodName=TK100A10N1
TK100A10N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 100A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.02 EUR
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TK11A65W,S5X docget.jsp?did=14259&prodName=TK11A65W
TK11A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 11.1A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 450µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.4 EUR
Mindestbestellmenge: 4 Stücke
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TK14A65W,S5X docget.jsp?did=14179&prodName=TK14A65W
TK14A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.51 EUR
Mindestbestellmenge: 4 Stücke
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TK14A65W5,S5X docget.jsp?did=14522&prodName=TK14A65W5
TK14A65W5,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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TK14C65W,S1Q docget.jsp?did=14524&prodName=TK14C65W
TK14C65W,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A I2PAK
Produkt ist nicht verfügbar
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TK14C65W5,S1Q docget.jsp?did=14523&prodName=TK14C65W5
TK14C65W5,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A I2PAK
Produkt ist nicht verfügbar
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TK14E65W,S1X docget.jsp?did=14525&prodName=TK14E65W
TK14E65W,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO220
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.78 EUR
Mindestbestellmenge: 4 Stücke
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TK14N65W,S1F docget.jsp?did=14507&prodName=TK14N65W
TK14N65W,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
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TK20A60W5,S5VX docget.jsp?did=14491&prodName=TK20A60W5
TK20A60W5,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.08 EUR
Mindestbestellmenge: 3 Stücke
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TK22A10N1,S4X docget.jsp?did=12792&prodName=TK22A10N1
TK22A10N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 22A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.97 EUR
Mindestbestellmenge: 6 Stücke
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TK30A06N1,S4X docget.jsp?did=13190&prodName=TK30A06N1
TK30A06N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 30A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 200µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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TK31N60W5,S1VF docget.jsp?did=14531&prodName=TK31N60W5
TK31N60W5,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.67 EUR
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TK32A12N1,S4X docget.jsp?did=13563&prodName=TK32A12N1
TK32A12N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 120V 32A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.5 EUR
Mindestbestellmenge: 6 Stücke
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TK34A10N1,S4X docget.jsp?type=datasheet&lang=en&pid=TK34A10N1
TK34A10N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 34A TO-220
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
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TK35A08N1,S4X docget.jsp?did=13147&prodName=TK35A08N1
TK35A08N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 35A TO220SIS
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
12+1.89 EUR
Mindestbestellmenge: 10 Stücke
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TK35A65W,S5X docget.jsp?type=datasheet&lang=en&pid=TK35A65W
TK35A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 35A TO-220
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
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TK35N65W,S1F docget.jsp?did=14511&prodName=TK35N65W
TK35N65W,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 35A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 2.1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK35N65W5,S1F docget.jsp?did=14535&prodName=TK35N65W5
TK35N65W5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 35A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.55 EUR
30+10.28 EUR
Mindestbestellmenge: 2 Stücke
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TK40A06N1,S4X docget.jsp?did=13461&prodName=TK40A06N1
TK40A06N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 40A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
50+1.44 EUR
100+1.29 EUR
Mindestbestellmenge: 7 Stücke
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TK40A10N1,S4X TK40A10N1_datasheet_en_20140213.pdf?did=11927&prodName=TK40A10N1
TK40A10N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 40A TO220SIS
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 35W (Tc)
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.86 EUR
10+3.13 EUR
Mindestbestellmenge: 5 Stücke
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TK42A12N1,S4X docget.jsp?did=13541&prodName=TK42A12N1
TK42A12N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 120V 42A TO220SIS
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.72 EUR
50+2.07 EUR
100+1.86 EUR
Mindestbestellmenge: 6 Stücke
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TK56A12N1,S4X docget.jsp?did=13564&prodName=TK56A12N1
TK56A12N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 120V 56A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.82 EUR
50+2.92 EUR
100+2.63 EUR
Mindestbestellmenge: 4 Stücke
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TK58A06N1,S4X docget.jsp?did=13211&prodName=TK58A06N1
TK58A06N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 58A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
10+2.33 EUR
Mindestbestellmenge: 9 Stücke
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TK65A10N1,S4X docget.jsp?did=11932&prodName=TK65A10N1
TK65A10N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 65A TO220SIS
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.19 EUR
Mindestbestellmenge: 5 Stücke
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TK72A12N1,S4X docget.jsp?did=13543&prodName=TK72A12N1
TK72A12N1,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 120V 72A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.31 EUR
10+5.66 EUR
Mindestbestellmenge: 4 Stücke
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TPH1110FNH,L1Q TPH1110FNH_datasheet_en_20140225.pdf?did=14411&prodName=TPH1110FNH
TPH1110FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 10A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 4V @ 300µA
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.42 EUR
Mindestbestellmenge: 5000 Stücke
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TPH1R403NL,L1Q TPH1R403NL_datasheet_en_20191030.pdf?did=14296&prodName=TPH1R403NL
TPH1R403NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 60A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.3V @ 500µA
Power Dissipation (Max): 1.6W (Ta), 64W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TPH3300CNH,L1Q docget.jsp?did=14397&prodName=TPH3300CNH
TPH3300CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 18A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 9A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 75 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.89 EUR
10000+0.84 EUR
15000+0.82 EUR
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TPH3R203NL,L1Q docget.jsp?did=14426&prodName=TPH3R203NL
TPH3R203NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 47A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 23.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Produkt ist nicht verfügbar
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TPH6400ENH,L1Q TPH6400ENH_datasheet_en_20140227.pdf?did=14398&prodName=TPH6400ENH
TPH6400ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 13A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.39 EUR
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TPHR9003NL,L1Q TPHR9003NL_datasheet_en_20191018.pdf?did=13936&prodName=TPHR9003NL
TPHR9003NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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