Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13054) > Seite 87 nach 218
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TL1L2-NW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1L2-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1L2-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-DW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 6500K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-LL1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 2700K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-LW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 3000K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-NW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-DW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 6500K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-LL1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 2700K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-LW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 3000K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-NW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TL1F2-DW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 6500K 2SMD |
Produkt ist nicht verfügbar |
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TL1F2-NW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1F2-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1F2-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TL1L2-DW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 6500K 2SMD |
Produkt ist nicht verfügbar |
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TL1L2-LL1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 2700K 2SMD |
Produkt ist nicht verfügbar |
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TL1L2-LW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 3000K 2SMD |
Produkt ist nicht verfügbar |
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TL1L2-NW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1L2-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1L2-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-DW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 6500K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-LL1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 2700K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-LW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 3000K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-NW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL2FL-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-DW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 6500K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-LL1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 2700K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-LW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS WARM WHT 3000K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-NW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL3GB-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TL1F2-DW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 6500K 2SMD |
Produkt ist nicht verfügbar |
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TL1F2-NW0,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1F2-NW1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS COOL WHT 5000K 2SMD |
Produkt ist nicht verfügbar |
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TL1F2-WH1,L | Toshiba Semiconductor and Storage | Description: LED LETERAS NEU WHITE 4000K 2SMD |
Produkt ist nicht verfügbar |
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TPN4R303NL,L1Q | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 63A 8TSON |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH4R003NL,L1Q | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 63A 8SOP |
Produkt ist nicht verfügbar |
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TPN11006NL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 17A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V |
Produkt ist nicht verfügbar |
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TPN7R506NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Power Dissipation (Max): 700mW (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH11006NL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 17A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V Power Dissipation (Max): 1.6W (Ta), 34W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN13008NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 18A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN4R303NL,L1Q | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 63A 8TSON |
auf Bestellung 24775 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH4R003NL,L1Q | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 30V 63A 8SOP |
auf Bestellung 4249 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN11006NL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 17A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V Power Dissipation (Max): 700mW (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V |
auf Bestellung 2466 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN7R506NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Power Dissipation (Max): 700mW (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH11006NL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 17A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V Power Dissipation (Max): 1.6W (Ta), 34W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 200µA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V |
auf Bestellung 33937 Stücke: Lieferzeit 10-14 Tag (e) |
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TPN13008NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 18A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V Power Dissipation (Max): 700mW (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V |
auf Bestellung 10491 Stücke: Lieferzeit 10-14 Tag (e) |
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TC74LCX125FTEL | Toshiba Semiconductor and Storage |
Description: IC BUF NON-INVERT 3.6V 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-TSSOP |
Produkt ist nicht verfügbar |
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TCR3DF30,LM | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 3V 300MA SMV |
auf Bestellung 612 Stücke: Lieferzeit 10-14 Tag (e) |
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TCR3DF33,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 300MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 65 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Obsolete PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 78 µA |
Produkt ist nicht verfügbar |
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TCR3DF30,LM | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 3V 300MA SMV |
Produkt ist nicht verfügbar |
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TCR3DF33,LM | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 300MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 65 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Obsolete PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 300mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 78 µA |
Produkt ist nicht verfügbar |
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1SS403,H3F | Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 200V 100MA USC Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60 ns Technology: Standard Capacitance @ Vr, F: 3pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 10538 Stücke: Lieferzeit 10-14 Tag (e) |
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1SV325,H3F | Toshiba Semiconductor and Storage |
Description: DIODE VARACTOR 10V ESC Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 12pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C4 Supplier Device Package: ESC Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 4.3 |
auf Bestellung 3420 Stücke: Lieferzeit 10-14 Tag (e) |
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TL1L2-NW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1L2-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1L2-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL2FL-DW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL2FL-LL1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL2FL-LW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL2FL-NW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL2FL-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL2FL-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL3GB-DW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL3GB-LL1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL3GB-LW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL3GB-NW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL3GB-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL3GB-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL1F2-DW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL1F2-NW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1F2-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1F2-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL1L2-DW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL1L2-LL1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL1L2-LW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL1L2-NW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1L2-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1L2-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL2FL-DW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL2FL-LL1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL2FL-LW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL2FL-NW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL2FL-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL2FL-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL3GB-DW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL3GB-LL1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL3GB-LW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL3GB-NW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL3GB-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL3GB-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL1F2-DW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL1F2-NW0,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1F2-NW1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1F2-WH1,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TPN4R303NL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 63A 8TSON
Description: MOSFET N-CH 30V 63A 8TSON
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)TPH4R003NL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 63A 8SOP
Description: MOSFET N-CH 30V 63A 8SOP
Produkt ist nicht verfügbar
TPN11006NL,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Produkt ist nicht verfügbar
TPN7R506NH,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.73 EUR |
TPH11006NL,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.48 EUR |
6000+ | 0.45 EUR |
9000+ | 0.42 EUR |
TPN13008NH,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.65 EUR |
TPN4R303NL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 63A 8TSON
Description: MOSFET N-CH 30V 63A 8TSON
auf Bestellung 24775 Stücke:
Lieferzeit 10-14 Tag (e)TPH4R003NL,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 63A 8SOP
Description: MOSFET N-CH 30V 63A 8SOP
auf Bestellung 4249 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.8 EUR |
11+ | 1.61 EUR |
100+ | 1.25 EUR |
500+ | 1.04 EUR |
1000+ | 0.82 EUR |
2000+ | 0.76 EUR |
TPN11006NL,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 2466 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.55 EUR |
13+ | 1.36 EUR |
100+ | 1.04 EUR |
500+ | 0.82 EUR |
1000+ | 0.66 EUR |
TPN7R506NH,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.8 EUR |
11+ | 1.61 EUR |
100+ | 1.25 EUR |
500+ | 1.04 EUR |
1000+ | 0.82 EUR |
2000+ | 0.76 EUR |
TPH11006NL,LQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 33937 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.25 EUR |
17+ | 1.09 EUR |
100+ | 0.75 EUR |
500+ | 0.63 EUR |
1000+ | 0.54 EUR |
TPN13008NH,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
auf Bestellung 10491 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.65 EUR |
14+ | 1.35 EUR |
100+ | 1.05 EUR |
500+ | 0.89 EUR |
1000+ | 0.73 EUR |
2000+ | 0.68 EUR |
TC74LCX125FTEL |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
Produkt ist nicht verfügbar
TCR3DF30,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA SMV
Description: IC REG LINEAR 3V 300MA SMV
auf Bestellung 612 Stücke:
Lieferzeit 10-14 Tag (e)TCR3DF33,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
Produkt ist nicht verfügbar
TCR3DF30,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA SMV
Description: IC REG LINEAR 3V 300MA SMV
Produkt ist nicht verfügbar
TCR3DF33,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
Produkt ist nicht verfügbar
1SS403,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 200V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 10538 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
45+ | 0.4 EUR |
100+ | 0.2 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
1SV325,H3F |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
Description: DIODE VARACTOR 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
auf Bestellung 3420 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
41+ | 0.43 EUR |
100+ | 0.22 EUR |
500+ | 0.19 EUR |
1000+ | 0.15 EUR |
2000+ | 0.14 EUR |