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TL1WK-DW1,L TL1WK-DW1,L Toshiba Semiconductor and Storage TL1WK-DW1,L.pdf Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1WK-LL1,L TL1WK-LL1,L Toshiba Semiconductor and Storage TL1WK-LL1,L.pdf Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1WK-LW1,L TL1WK-LW1,L Toshiba Semiconductor and Storage TL1WK-LW1,L.pdf Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1WK-NT1,L TL1WK-NT1,L Toshiba Semiconductor and Storage TL1WK-NT1,L.pdf Description: LED LETERAS COOL WHT 5700K 2SMD
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TL1WK-NW1,L TL1WK-NW1,L Toshiba Semiconductor and Storage TL1WK-NW1,L.pdf Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1WK-WH1,L TL1WK-WH1,L Toshiba Semiconductor and Storage TL1WK-WH1,L.pdf Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL1WK-DW1,L TL1WK-DW1,L Toshiba Semiconductor and Storage TL1WK-DW1,L.pdf Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1WK-LL1,L TL1WK-LL1,L Toshiba Semiconductor and Storage TL1WK-LL1,L.pdf Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1WK-LW1,L TL1WK-LW1,L Toshiba Semiconductor and Storage TL1WK-LW1,L.pdf Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1WK-NT1,L TL1WK-NT1,L Toshiba Semiconductor and Storage TL1WK-NT1,L.pdf Description: LED LETERAS COOL WHT 5700K 2SMD
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TL1WK-NW1,L TL1WK-NW1,L Toshiba Semiconductor and Storage TL1WK-NW1,L.pdf Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1WK-WH1,L TL1WK-WH1,L Toshiba Semiconductor and Storage TL1WK-WH1,L.pdf Description: LED LETERAS NEU WHITE 4000K 2SMD
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TCS40DLR,LF TCS40DLR,LF Toshiba Semiconductor and Storage docget.jsp?did=30105&prodName=TCS40DLR Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 6000 Stücke:
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3000+0.14 EUR
6000+0.13 EUR
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TCS40DPR,LF TCS40DPR,LF Toshiba Semiconductor and Storage docget.jsp?did=30107&prodName=TCS40DPR Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 138000 Stücke:
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3000+0.14 EUR
6000+0.13 EUR
21000+0.12 EUR
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TCS40DLR,LF TCS40DLR,LF Toshiba Semiconductor and Storage docget.jsp?did=30105&prodName=TCS40DLR Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 7767 Stücke:
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67+0.26 EUR
77+0.23 EUR
82+0.21 EUR
89+0.2 EUR
95+0.19 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
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TCS40DPR,LF TCS40DPR,LF Toshiba Semiconductor and Storage docget.jsp?did=30107&prodName=TCS40DPR Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 138616 Stücke:
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67+0.26 EUR
77+0.23 EUR
82+0.21 EUR
89+0.2 EUR
95+0.19 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 67
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TPHR8504PL,L1Q TPHR8504PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15221&prodName=TPHR8504PL Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
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TPHR8504PL,L1Q TPHR8504PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15221&prodName=TPHR8504PL Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 2585 Stücke:
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5+3.54 EUR
10+2.4 EUR
100+1.71 EUR
500+1.45 EUR
Mindestbestellmenge: 5
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74LCX540FT(AE) 74LCX540FT(AE) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74LCX540FT Description: IC INVERTER 8-INPUT 20TSSOP
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74LCX573FT(AE) 74LCX573FT(AE) Toshiba Semiconductor and Storage docget.jsp?did=15276&prodName=74LCX573FT Description: IC LATCH OCTAL D-TYPE 20TSSOP
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74VHC125FT 74VHC125FT Toshiba Semiconductor and Storage docget.jsp?did=14142&prodName=74VHC125FT Description: IC BUFF NON-INVERT 5.5V 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
auf Bestellung 5000 Stücke:
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2500+0.17 EUR
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74VHC139FT 74VHC139FT Toshiba Semiconductor and Storage docget.jsp?did=15693&prodName=74VHC139FT Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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74VHC373FT(BJ) 74VHC373FT(BJ) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHC373FT Description: IC LATCH OCTAL D-TYPE 20TSSOP
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2SC6076(TE16L1,NV) 2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage docget.jsp?did=10384&prodName=2SC6076 Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 2000 Stücke:
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2000+0.36 EUR
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2SC6076(TE16L1,NV) 2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage docget.jsp?did=10384&prodName=2SC6076 Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 2259 Stücke:
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13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
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TPWR8503NL,L1Q TPWR8503NL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15482&prodName=TPWR8503NL Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Produkt ist nicht verfügbar
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TPWR8004PL,L1Q TPWR8004PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15466&prodName=TPWR8004PL Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 5000 Stücke:
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5000+2.23 EUR
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TPWR8503NL,L1Q TPWR8503NL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15482&prodName=TPWR8503NL Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 4914 Stücke:
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5+3.96 EUR
10+2.59 EUR
100+1.8 EUR
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TPWR8004PL,L1Q TPWR8004PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15466&prodName=TPWR8004PL Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 8504 Stücke:
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5+4.1 EUR
10+2.96 EUR
100+2.48 EUR
500+2.46 EUR
Mindestbestellmenge: 5
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TCR5AM11,LF TCR5AM11,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1.1V 500MA 5DFNB
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TCR5AM11,LF TCR5AM11,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1.1V 500MA 5DFNB
auf Bestellung 3587 Stücke:
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25+0.7 EUR
30+0.61 EUR
32+0.57 EUR
100+0.45 EUR
250+0.42 EUR
500+0.36 EUR
1000+0.27 EUR
2500+0.25 EUR
Mindestbestellmenge: 25
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SSM3J133TU,LF SSM3J133TU,LF Toshiba Semiconductor and Storage docget.jsp?did=6640&prodName=SSM3J133TU Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.19 EUR
6000+0.18 EUR
9000+0.15 EUR
21000+0.14 EUR
Mindestbestellmenge: 3000
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SSM6N56FE,LM SSM6N56FE,LM Toshiba Semiconductor and Storage docget.jsp?did=15150&prodName=SSM6N56FE Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.11 EUR
8000+0.092 EUR
12000+0.09 EUR
20000+0.089 EUR
28000+0.085 EUR
Mindestbestellmenge: 4000
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DF2B7M2SL,L3F DF2B7M2SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=15756&prodName=DF2B7M2SL Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B7SL,L3F DF2B7SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=15752&prodName=DF2B7SL Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
auf Bestellung 20000 Stücke:
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10000+0.042 EUR
20000+0.034 EUR
Mindestbestellmenge: 10000
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DF2S6.8UCT,L3F DF2S6.8UCT,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT Description: TVS DIODE 19VWM 22VC
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DF2S6.8UFS,L3M DF2S6.8UFS,L3M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS Description: TVS DIODE 19VWM 22VC
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SSM3K337R,LF SSM3K337R,LF Toshiba Semiconductor and Storage SSM3K337R_datasheet_en_20210105.pdf?did=14758&prodName=SSM3K337R Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
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SSM3J133TU,LF SSM3J133TU,LF Toshiba Semiconductor and Storage docget.jsp?did=6640&prodName=SSM3J133TU Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
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SSM6N56FE,LM SSM6N56FE,LM Toshiba Semiconductor and Storage docget.jsp?did=15150&prodName=SSM6N56FE Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
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DF2B7M2SL,L3F DF2B7M2SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=15756&prodName=DF2B7M2SL Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
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DF2B7SL,L3F DF2B7SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=15752&prodName=DF2B7SL Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
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DF2S6.8UCT,L3F DF2S6.8UCT,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT Description: TVS DIODE 19VWM 22VC
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DF2S6.8UFS,L3M DF2S6.8UFS,L3M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS Description: TVS DIODE 19VWM 22VC
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SSM3K337R,LF SSM3K337R,LF Toshiba Semiconductor and Storage SSM3K337R_datasheet_en_20210105.pdf?did=14758&prodName=SSM3K337R Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
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DF2S6.8UCT,L3F DF2S6.8UCT,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT Description: TVS DIODE 19VWM 22VC
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DF2S6.8UFS,L3M DF2S6.8UFS,L3M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS Description: TVS DIODE 19VWM 22VC
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2SB906-Y(TE16L1,NQ 2SB906-Y(TE16L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=20843&prodName=2SB906 Description: TRANS PNP 60V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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74LCX00FT 74LCX00FT Toshiba Semiconductor and Storage docget.jsp?did=15273&prodName=74LCX00FT Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Produkt ist nicht verfügbar
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74LCX04FT(AE) 74LCX04FT(AE) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74LCX04FT Description: IC INVERTER HEX 14TSSOP
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74LCX05FT 74LCX05FT Toshiba Semiconductor and Storage docget.jsp?did=15384&prodName=74LCX05FT Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
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74LCX07FT 74LCX07FT Toshiba Semiconductor and Storage docget.jsp?did=15387&prodName=74LCX07FT Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
Part Status: Active
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74LCX126FT(AE) 74LCX126FT(AE) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74LCX126FT Description: IC BUS BUFFER QDLV N-INV 14TSSOP
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CTS05S30,L3F CTS05S30,L3F Toshiba Semiconductor and Storage docget.jsp?did=13982&prodName=CTS05S30 Description: DIODE SCHOTTKY 30V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
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CTS05S40,L3F CTS05S40,L3F Toshiba Semiconductor and Storage docget.jsp?did=14192&prodName=CTS05S40 Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
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CTS520,L3F CTS520,L3F Toshiba Semiconductor and Storage docget.jsp?did=13015&prodName=CTS520 Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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CTS521,L3F CTS521,L3F Toshiba Semiconductor and Storage CTS521_datasheet_en_20140404.pdf?did=12770&prodName=CTS521 Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 140000 Stücke:
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CUS05S30,H3F CUS05S30,H3F Toshiba Semiconductor and Storage docget.jsp?did=13983&prodName=CUS05S30 Description: DIODE SCHOTTKY 30V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
auf Bestellung 15000 Stücke:
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CUS05S40,H3F CUS05S40,H3F Toshiba Semiconductor and Storage CUS05S40_datasheet_en_20140407.pdf?did=14743&prodName=CUS05S40 Description: DIODE SCHOTTKY 40V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
auf Bestellung 48000 Stücke:
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CUS08F30,H3F CUS08F30,H3F Toshiba Semiconductor and Storage docget.jsp?did=9019&prodName=CUS08F30 Description: DIODE SCHOTTKY 30V 800MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 800 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 530557 Stücke:
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3000+0.061 EUR
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9000+0.055 EUR
15000+0.053 EUR
30000+0.051 EUR
75000+0.05 EUR
150000+0.047 EUR
300000+0.046 EUR
Mindestbestellmenge: 3000
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TL1WK-DW1,L TL1WK-DW1,L.pdf
TL1WK-DW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1WK-LL1,L TL1WK-LL1,L.pdf
TL1WK-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1WK-LW1,L TL1WK-LW1,L.pdf
TL1WK-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1WK-NT1,L TL1WK-NT1,L.pdf
TL1WK-NT1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5700K 2SMD
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TL1WK-NW1,L TL1WK-NW1,L.pdf
TL1WK-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1WK-WH1,L TL1WK-WH1,L.pdf
TL1WK-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL1WK-DW1,L TL1WK-DW1,L.pdf
TL1WK-DW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1WK-LL1,L TL1WK-LL1,L.pdf
TL1WK-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1WK-LW1,L TL1WK-LW1,L.pdf
TL1WK-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1WK-NT1,L TL1WK-NT1,L.pdf
TL1WK-NT1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5700K 2SMD
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TL1WK-NW1,L TL1WK-NW1,L.pdf
TL1WK-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1WK-WH1,L TL1WK-WH1,L.pdf
TL1WK-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
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TCS40DLR,LF docget.jsp?did=30105&prodName=TCS40DLR
TCS40DLR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TCS40DPR,LF docget.jsp?did=30107&prodName=TCS40DPR
TCS40DPR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 138000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
6000+0.13 EUR
21000+0.12 EUR
Mindestbestellmenge: 3000
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TCS40DLR,LF docget.jsp?did=30105&prodName=TCS40DLR
TCS40DLR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 7767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
77+0.23 EUR
82+0.21 EUR
89+0.2 EUR
95+0.19 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 67
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TCS40DPR,LF docget.jsp?did=30107&prodName=TCS40DPR
TCS40DPR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 138616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
77+0.23 EUR
82+0.21 EUR
89+0.2 EUR
95+0.19 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 67
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TPHR8504PL,L1Q docget.jsp?did=15221&prodName=TPHR8504PL
TPHR8504PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Produkt ist nicht verfügbar
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TPHR8504PL,L1Q docget.jsp?did=15221&prodName=TPHR8504PL
TPHR8504PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 2585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.4 EUR
100+1.71 EUR
500+1.45 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
74LCX540FT(AE) docget.jsp?type=datasheet&lang=en&pid=74LCX540FT
74LCX540FT(AE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 8-INPUT 20TSSOP
Produkt ist nicht verfügbar
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74LCX573FT(AE) docget.jsp?did=15276&prodName=74LCX573FT
74LCX573FT(AE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Produkt ist nicht verfügbar
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74VHC125FT docget.jsp?did=14142&prodName=74VHC125FT
74VHC125FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF NON-INVERT 5.5V 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.17 EUR
Mindestbestellmenge: 2500
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74VHC139FT docget.jsp?did=15693&prodName=74VHC139FT
74VHC139FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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74VHC373FT(BJ) docget.jsp?type=datasheet&lang=en&pid=74VHC373FT
74VHC373FT(BJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Produkt ist nicht verfügbar
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2SC6076(TE16L1,NV) docget.jsp?did=10384&prodName=2SC6076
2SC6076(TE16L1,NV)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.36 EUR
Mindestbestellmenge: 2000
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2SC6076(TE16L1,NV) docget.jsp?did=10384&prodName=2SC6076
2SC6076(TE16L1,NV)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 2259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.44 EUR
1000+0.4 EUR
Mindestbestellmenge: 13
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TPWR8503NL,L1Q docget.jsp?did=15482&prodName=TPWR8503NL
TPWR8503NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Produkt ist nicht verfügbar
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TPWR8004PL,L1Q docget.jsp?did=15466&prodName=TPWR8004PL
TPWR8004PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.23 EUR
Mindestbestellmenge: 5000
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TPWR8503NL,L1Q docget.jsp?did=15482&prodName=TPWR8503NL
TPWR8503NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 4914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.96 EUR
10+2.59 EUR
100+1.8 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TPWR8004PL,L1Q docget.jsp?did=15466&prodName=TPWR8004PL
TPWR8004PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 8504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.1 EUR
10+2.96 EUR
100+2.48 EUR
500+2.46 EUR
Mindestbestellmenge: 5
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TCR5AM11,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM11,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM11,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM11,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
auf Bestellung 3587 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
30+0.61 EUR
32+0.57 EUR
100+0.45 EUR
250+0.42 EUR
500+0.36 EUR
1000+0.27 EUR
2500+0.25 EUR
Mindestbestellmenge: 25
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SSM3J133TU,LF docget.jsp?did=6640&prodName=SSM3J133TU
SSM3J133TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
6000+0.18 EUR
9000+0.15 EUR
21000+0.14 EUR
Mindestbestellmenge: 3000
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SSM6N56FE,LM docget.jsp?did=15150&prodName=SSM6N56FE
SSM6N56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.11 EUR
8000+0.092 EUR
12000+0.09 EUR
20000+0.089 EUR
28000+0.085 EUR
Mindestbestellmenge: 4000
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DF2B7M2SL,L3F docget.jsp?did=15756&prodName=DF2B7M2SL
DF2B7M2SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B7SL,L3F docget.jsp?did=15752&prodName=DF2B7SL
DF2B7SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.042 EUR
20000+0.034 EUR
Mindestbestellmenge: 10000
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DF2S6.8UCT,L3F docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT
DF2S6.8UCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
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DF2S6.8UFS,L3M docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS
DF2S6.8UFS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM3K337R,LF SSM3K337R_datasheet_en_20210105.pdf?did=14758&prodName=SSM3K337R
SSM3K337R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.23 EUR
9000+0.21 EUR
Mindestbestellmenge: 3000
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SSM3J133TU,LF docget.jsp?did=6640&prodName=SSM3J133TU
SSM3J133TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 57692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
33+0.54 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
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SSM6N56FE,LM docget.jsp?did=15150&prodName=SSM6N56FE
SSM6N56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
52+0.34 EUR
144+0.12 EUR
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DF2B7M2SL,L3F docget.jsp?did=15756&prodName=DF2B7M2SL
DF2B7M2SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
auf Bestellung 9095 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
48+0.37 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
2000+0.09 EUR
5000+0.083 EUR
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DF2B7SL,L3F docget.jsp?did=15752&prodName=DF2B7SL
DF2B7SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
auf Bestellung 25293 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
130+0.14 EUR
300+0.059 EUR
500+0.055 EUR
1000+0.052 EUR
2000+0.05 EUR
5000+0.049 EUR
Mindestbestellmenge: 91
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DF2S6.8UCT,L3F docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT
DF2S6.8UCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 19630 Stücke:
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DF2S6.8UFS,L3M docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS
DF2S6.8UFS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 3943 Stücke:
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SSM3K337R,LF SSM3K337R_datasheet_en_20210105.pdf?did=14758&prodName=SSM3K337R
SSM3K337R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
auf Bestellung 12304 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
30+0.6 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.27 EUR
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DF2S6.8UCT,L3F docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT
DF2S6.8UCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 19630 Stücke:
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DF2S6.8UFS,L3M docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS
DF2S6.8UFS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 3943 Stücke:
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2SB906-Y(TE16L1,NQ docget.jsp?did=20843&prodName=2SB906
2SB906-Y(TE16L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 60V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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74LCX00FT docget.jsp?did=15273&prodName=74LCX00FT
74LCX00FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Produkt ist nicht verfügbar
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74LCX04FT(AE) docget.jsp?type=datasheet&lang=en&pid=74LCX04FT
74LCX04FT(AE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER HEX 14TSSOP
auf Bestellung 2500 Stücke:
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74LCX05FT docget.jsp?did=15384&prodName=74LCX05FT
74LCX05FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Qualification: AEC-Q100
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.21 EUR
5000+0.2 EUR
12500+0.19 EUR
Mindestbestellmenge: 2500
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74LCX07FT docget.jsp?did=15387&prodName=74LCX07FT
74LCX07FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 14-TSSOP
Part Status: Active
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.23 EUR
5000+0.21 EUR
7500+0.2 EUR
12500+0.19 EUR
17500+0.18 EUR
Mindestbestellmenge: 2500
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74LCX126FT(AE) docget.jsp?type=datasheet&lang=en&pid=74LCX126FT
74LCX126FT(AE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER QDLV N-INV 14TSSOP
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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CTS05S30,L3F docget.jsp?did=13982&prodName=CTS05S30
CTS05S30,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.052 EUR
Mindestbestellmenge: 10000
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CTS05S40,L3F docget.jsp?did=14192&prodName=CTS05S40
CTS05S40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 500MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.048 EUR
Mindestbestellmenge: 10000
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CTS520,L3F docget.jsp?did=13015&prodName=CTS520
CTS520,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 16pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Produkt ist nicht verfügbar
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CTS521,L3F CTS521_datasheet_en_20140404.pdf?did=12770&prodName=CTS521
CTS521,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 200MA CST2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 30 V
auf Bestellung 140000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.035 EUR
20000+0.032 EUR
30000+0.031 EUR
Mindestbestellmenge: 10000
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CUS05S30,H3F docget.jsp?did=13983&prodName=CUS05S30
CUS05S30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 340 mV @ 100 mA
Current - Reverse Leakage @ Vr: 150 µA @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.057 EUR
6000+0.052 EUR
9000+0.047 EUR
Mindestbestellmenge: 3000
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CUS05S40,H3F CUS05S40_datasheet_en_20140407.pdf?did=14743&prodName=CUS05S40
CUS05S40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 500MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.063 EUR
6000+0.06 EUR
9000+0.058 EUR
21000+0.056 EUR
30000+0.055 EUR
Mindestbestellmenge: 3000
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CUS08F30,H3F docget.jsp?did=9019&prodName=CUS08F30
CUS08F30,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 800MA USC
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 800 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 530557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.061 EUR
6000+0.056 EUR
9000+0.055 EUR
15000+0.053 EUR
30000+0.051 EUR
75000+0.05 EUR
150000+0.047 EUR
300000+0.046 EUR
Mindestbestellmenge: 3000
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