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TB62261FTG,EL TB62261FTG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62261FTG Description: IC MOTOR DRIVER PAR 48WQFN
auf Bestellung 8000 Stücke:
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TB62262FTG,EL TB62262FTG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB62262FTG Description: IC MOTOR DRIVER PAR 48WQFN
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TB67S142FTG,EL TB67S142FTG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB67S142FTG Description: IC MOTOR DRIVER PAR 48WQFN
auf Bestellung 7984 Stücke:
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TB67S145FTG,EL TB67S145FTG,EL Toshiba Semiconductor and Storage docget.jsp?did=29410&prodName=TB67S145FTG Description: IC MOTOR DRIVER PAR 48WQFN
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TB67S149HG TB67S149HG Toshiba Semiconductor and Storage TB67S149HG_datasheet_en_20140415.pdf?did=15173&prodName=TB67S149HG Description: IC MOTOR DRIVER UNIPOLAR 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
auf Bestellung 380 Stücke:
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17+8.51 EUR
34+8.06 EUR
102+7.5 EUR
255+7.15 EUR
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TL1WK-DW1,L TL1WK-DW1,L Toshiba Semiconductor and Storage TL1WK-DW1,L.pdf Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1WK-LL1,L TL1WK-LL1,L Toshiba Semiconductor and Storage TL1WK-LL1,L.pdf Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1WK-LW1,L TL1WK-LW1,L Toshiba Semiconductor and Storage TL1WK-LW1,L.pdf Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1WK-NT1,L TL1WK-NT1,L Toshiba Semiconductor and Storage TL1WK-NT1,L.pdf Description: LED LETERAS COOL WHT 5700K 2SMD
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TL1WK-NW1,L TL1WK-NW1,L Toshiba Semiconductor and Storage TL1WK-NW1,L.pdf Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1WK-WH1,L TL1WK-WH1,L Toshiba Semiconductor and Storage TL1WK-WH1,L.pdf Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL1WK-DW1,L TL1WK-DW1,L Toshiba Semiconductor and Storage TL1WK-DW1,L.pdf Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1WK-LL1,L TL1WK-LL1,L Toshiba Semiconductor and Storage TL1WK-LL1,L.pdf Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1WK-LW1,L TL1WK-LW1,L Toshiba Semiconductor and Storage TL1WK-LW1,L.pdf Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1WK-NT1,L TL1WK-NT1,L Toshiba Semiconductor and Storage TL1WK-NT1,L.pdf Description: LED LETERAS COOL WHT 5700K 2SMD
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TL1WK-NW1,L TL1WK-NW1,L Toshiba Semiconductor and Storage TL1WK-NW1,L.pdf Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1WK-WH1,L TL1WK-WH1,L Toshiba Semiconductor and Storage TL1WK-WH1,L.pdf Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL1WK-DW1,L TL1WK-DW1,L Toshiba Semiconductor and Storage TL1WK-DW1,L.pdf Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1WK-LL1,L TL1WK-LL1,L Toshiba Semiconductor and Storage TL1WK-LL1,L.pdf Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1WK-LW1,L TL1WK-LW1,L Toshiba Semiconductor and Storage TL1WK-LW1,L.pdf Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1WK-NT1,L TL1WK-NT1,L Toshiba Semiconductor and Storage TL1WK-NT1,L.pdf Description: LED LETERAS COOL WHT 5700K 2SMD
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TL1WK-NW1,L TL1WK-NW1,L Toshiba Semiconductor and Storage TL1WK-NW1,L.pdf Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1WK-WH1,L TL1WK-WH1,L Toshiba Semiconductor and Storage TL1WK-WH1,L.pdf Description: LED LETERAS NEU WHITE 4000K 2SMD
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TCS40DLR,LF TCS40DLR,LF Toshiba Semiconductor and Storage docget.jsp?did=30105&prodName=TCS40DLR Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 45000 Stücke:
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3000+0.19 EUR
6000+0.18 EUR
15000+0.17 EUR
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TCS40DPR,LF TCS40DPR,LF Toshiba Semiconductor and Storage docget.jsp?did=30107&prodName=TCS40DPR Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 132700 Stücke:
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3000+0.19 EUR
6000+0.18 EUR
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TCS40DLR,LF TCS40DLR,LF Toshiba Semiconductor and Storage docget.jsp?did=30105&prodName=TCS40DLR Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 45163 Stücke:
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56+0.38 EUR
68+0.31 EUR
72+0.29 EUR
78+0.27 EUR
83+0.25 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.2 EUR
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TCS40DPR,LF TCS40DPR,LF Toshiba Semiconductor and Storage docget.jsp?did=30107&prodName=TCS40DPR Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 133500 Stücke:
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56+0.38 EUR
68+0.31 EUR
72+0.29 EUR
78+0.27 EUR
83+0.25 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.2 EUR
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TPHR8504PL,L1Q TPHR8504PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15221&prodName=TPHR8504PL Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Produkt ist nicht verfügbar
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TPHR8504PL,L1Q TPHR8504PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15221&prodName=TPHR8504PL Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Produkt ist nicht verfügbar
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74LCX540FT(AE) 74LCX540FT(AE) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74LCX540FT Description: IC INVERTER 8-INPUT 20TSSOP
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74LCX573FT(AE) 74LCX573FT(AE) Toshiba Semiconductor and Storage docget.jsp?did=15276&prodName=74LCX573FT Description: IC LATCH OCTAL D-TYPE 20TSSOP
Produkt ist nicht verfügbar
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74VHC125FT 74VHC125FT Toshiba Semiconductor and Storage docget.jsp?did=14142&prodName=74VHC125FT Description: IC BUFF 2V/5.5V 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
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2500+0.24 EUR
5000+0.23 EUR
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74VHC139FT 74VHC139FT Toshiba Semiconductor and Storage docget.jsp?did=15693&prodName=74VHC139FT Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
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74VHC373FT(BJ) 74VHC373FT(BJ) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHC373FT Description: IC LATCH OCTAL D-TYPE 20TSSOP
Produkt ist nicht verfügbar
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2SC6076(TE16L1,NV) 2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage docget.jsp?did=10384&prodName=2SC6076 Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 2000 Stücke:
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2000+0.43 EUR
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2SC6076(TE16L1,NV) 2SC6076(TE16L1,NV) Toshiba Semiconductor and Storage docget.jsp?did=10384&prodName=2SC6076 Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 2259 Stücke:
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13+1.7 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
1000+0.48 EUR
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TPWR8503NL,L1Q TPWR8503NL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15482&prodName=TPWR8503NL Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Produkt ist nicht verfügbar
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TPWR8004PL,L1Q TPWR8004PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15466&prodName=TPWR8004PL Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 10000 Stücke:
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5000+2.42 EUR
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TPWR8503NL,L1Q TPWR8503NL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15482&prodName=TPWR8503NL Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 4914 Stücke:
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5+4.71 EUR
10+3.08 EUR
100+2.14 EUR
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TPWR8004PL,L1Q TPWR8004PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15466&prodName=TPWR8004PL Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 13504 Stücke:
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3+7.14 EUR
10+4.7 EUR
100+3.3 EUR
500+2.95 EUR
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TCR5AM11,LF TCR5AM11,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1.1V 500MA 5DFNB
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TCR5AM11,LF TCR5AM11,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1.1V 500MA 5DFNB
auf Bestellung 3587 Stücke:
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25+0.83 EUR
30+0.73 EUR
32+0.68 EUR
100+0.54 EUR
250+0.5 EUR
500+0.43 EUR
1000+0.32 EUR
2500+0.3 EUR
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SSM3J133TU,LF SSM3J133TU,LF Toshiba Semiconductor and Storage docget.jsp?did=6640&prodName=SSM3J133TU Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 45000 Stücke:
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SSM6N56FE,LM SSM6N56FE,LM Toshiba Semiconductor and Storage docget.jsp?did=15150&prodName=SSM6N56FE Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32000 Stücke:
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DF2B7M2SL,L3F DF2B7M2SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=15756&prodName=DF2B7M2SL Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
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DF2B7SL,L3F DF2B7SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=15752&prodName=DF2B7SL Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
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DF2S6.8UCT,L3F DF2S6.8UCT,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT Description: TVS DIODE 19VWM 22VC
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DF2S6.8UFS,L3M DF2S6.8UFS,L3M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS Description: TVS DIODE 19VWM 22VC
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SSM3K337R,LF SSM3K337R,LF Toshiba Semiconductor and Storage SSM3K337R_datasheet_en_20210105.pdf?did=14758&prodName=SSM3K337R Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
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SSM3J133TU,LF SSM3J133TU,LF Toshiba Semiconductor and Storage docget.jsp?did=6640&prodName=SSM3J133TU Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 57692 Stücke:
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SSM6N56FE,LM SSM6N56FE,LM Toshiba Semiconductor and Storage docget.jsp?did=15150&prodName=SSM6N56FE Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
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DF2B7M2SL,L3F DF2B7M2SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=15756&prodName=DF2B7M2SL Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
auf Bestellung 2140 Stücke:
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DF2B7SL,L3F DF2B7SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=15752&prodName=DF2B7SL Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
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DF2S6.8UCT,L3F DF2S6.8UCT,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT Description: TVS DIODE 19VWM 22VC
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DF2S6.8UFS,L3M DF2S6.8UFS,L3M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS Description: TVS DIODE 19VWM 22VC
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SSM3K337R,LF SSM3K337R,LF Toshiba Semiconductor and Storage SSM3K337R_datasheet_en_20210105.pdf?did=14758&prodName=SSM3K337R Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
auf Bestellung 12304 Stücke:
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500+0.39 EUR
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DF2S6.8UCT,L3F DF2S6.8UCT,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT Description: TVS DIODE 19VWM 22VC
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DF2S6.8UFS,L3M DF2S6.8UFS,L3M Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS Description: TVS DIODE 19VWM 22VC
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2SB906-Y(TE16L1,NQ 2SB906-Y(TE16L1,NQ Toshiba Semiconductor and Storage docget.jsp?did=20843&prodName=2SB906 Description: TRANS PNP 60V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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74LCX00FT 74LCX00FT Toshiba Semiconductor and Storage docget.jsp?did=15273&prodName=74LCX00FT Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
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TB62261FTG,EL docget.jsp?type=datasheet&lang=en&pid=TB62261FTG
TB62261FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48WQFN
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TB62262FTG,EL docget.jsp?type=datasheet&lang=en&pid=TB62262FTG
TB62262FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48WQFN
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TB67S142FTG,EL docget.jsp?type=datasheet&lang=en&pid=TB67S142FTG
TB67S142FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48WQFN
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TB67S145FTG,EL docget.jsp?did=29410&prodName=TB67S145FTG
TB67S145FTG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER PAR 48WQFN
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TB67S149HG TB67S149HG_datasheet_en_20140415.pdf?did=15173&prodName=TB67S149HG
TB67S149HG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 40V
Supplier Device Package: 25-HZIP
Motor Type - Stepper: Unipolar
Step Resolution: 1 ~ 1/32
auf Bestellung 380 Stücke:
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2+11.6 EUR
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34+8.06 EUR
102+7.5 EUR
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TL1WK-DW1,L TL1WK-DW1,L.pdf
TL1WK-DW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1WK-LL1,L TL1WK-LL1,L.pdf
TL1WK-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1WK-LW1,L TL1WK-LW1,L.pdf
TL1WK-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1WK-NT1,L TL1WK-NT1,L.pdf
TL1WK-NT1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5700K 2SMD
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TL1WK-NW1,L TL1WK-NW1,L.pdf
TL1WK-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1WK-WH1,L TL1WK-WH1,L.pdf
TL1WK-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL1WK-DW1,L TL1WK-DW1,L.pdf
TL1WK-DW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1WK-LL1,L TL1WK-LL1,L.pdf
TL1WK-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1WK-LW1,L TL1WK-LW1,L.pdf
TL1WK-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1WK-NT1,L TL1WK-NT1,L.pdf
TL1WK-NT1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5700K 2SMD
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TL1WK-NW1,L TL1WK-NW1,L.pdf
TL1WK-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1WK-WH1,L TL1WK-WH1,L.pdf
TL1WK-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL1WK-DW1,L TL1WK-DW1,L.pdf
TL1WK-DW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1WK-LL1,L TL1WK-LL1,L.pdf
TL1WK-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1WK-LW1,L TL1WK-LW1,L.pdf
TL1WK-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1WK-NT1,L TL1WK-NT1,L.pdf
TL1WK-NT1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5700K 2SMD
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TL1WK-NW1,L TL1WK-NW1,L.pdf
TL1WK-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1WK-WH1,L TL1WK-WH1,L.pdf
TL1WK-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
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TCS40DLR,LF docget.jsp?did=30105&prodName=TCS40DLR
TCS40DLR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 45000 Stücke:
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3000+0.19 EUR
6000+0.18 EUR
15000+0.17 EUR
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TCS40DPR,LF docget.jsp?did=30107&prodName=TCS40DPR
TCS40DPR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 132700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
15000+0.17 EUR
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TCS40DLR,LF docget.jsp?did=30105&prodName=TCS40DLR
TCS40DLR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 45163 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
68+0.31 EUR
72+0.29 EUR
78+0.27 EUR
83+0.25 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.2 EUR
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TCS40DPR,LF docget.jsp?did=30107&prodName=TCS40DPR
TCS40DPR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 5.5V
Technology: Hall Effect
Sensing Range: ±4.4mT Trip, ±0.9mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.6mA (Typ)
Supplier Device Package: SOT-23F
Test Condition: 25°C
Part Status: Active
auf Bestellung 133500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
68+0.31 EUR
72+0.29 EUR
78+0.27 EUR
83+0.25 EUR
100+0.24 EUR
500+0.21 EUR
1000+0.2 EUR
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TPHR8504PL,L1Q docget.jsp?did=15221&prodName=TPHR8504PL
TPHR8504PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Produkt ist nicht verfügbar
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TPHR8504PL,L1Q docget.jsp?did=15221&prodName=TPHR8504PL
TPHR8504PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
Produkt ist nicht verfügbar
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74LCX540FT(AE) docget.jsp?type=datasheet&lang=en&pid=74LCX540FT
74LCX540FT(AE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 8-INPUT 20TSSOP
Produkt ist nicht verfügbar
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74LCX573FT(AE) docget.jsp?did=15276&prodName=74LCX573FT
74LCX573FT(AE)
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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74VHC125FT docget.jsp?did=14142&prodName=74VHC125FT
74VHC125FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/5.5V 14-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.24 EUR
5000+0.23 EUR
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74VHC139FT docget.jsp?did=15693&prodName=74VHC139FT
74VHC139FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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74VHC373FT(BJ) docget.jsp?type=datasheet&lang=en&pid=74VHC373FT
74VHC373FT(BJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC LATCH OCTAL D-TYPE 20TSSOP
Produkt ist nicht verfügbar
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2SC6076(TE16L1,NV) docget.jsp?did=10384&prodName=2SC6076
2SC6076(TE16L1,NV)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.43 EUR
Mindestbestellmenge: 2000 Stücke
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2SC6076(TE16L1,NV) docget.jsp?did=10384&prodName=2SC6076
2SC6076(TE16L1,NV)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 80V 3A PW-MOLD
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PW-MOLD
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 10 W
auf Bestellung 2259 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.7 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
1000+0.48 EUR
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TPWR8503NL,L1Q docget.jsp?did=15482&prodName=TPWR8503NL
TPWR8503NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
Produkt ist nicht verfügbar
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TPWR8004PL,L1Q docget.jsp?did=15466&prodName=TPWR8004PL
TPWR8004PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+2.42 EUR
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TPWR8503NL,L1Q docget.jsp?did=15482&prodName=TPWR8503NL
TPWR8503NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
auf Bestellung 4914 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.71 EUR
10+3.08 EUR
100+2.14 EUR
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TPWR8004PL,L1Q docget.jsp?did=15466&prodName=TPWR8004PL
TPWR8004PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 1W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 20 V
auf Bestellung 13504 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.14 EUR
10+4.7 EUR
100+3.3 EUR
500+2.95 EUR
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TCR5AM11,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM11,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TCR5AM11,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM11,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.1V 500MA 5DFNB
auf Bestellung 3587 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
30+0.73 EUR
32+0.68 EUR
100+0.54 EUR
250+0.5 EUR
500+0.43 EUR
1000+0.32 EUR
2500+0.3 EUR
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SSM3J133TU,LF docget.jsp?did=6640&prodName=SSM3J133TU
SSM3J133TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.23 EUR
6000+0.21 EUR
9000+0.18 EUR
21000+0.17 EUR
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SSM6N56FE,LM docget.jsp?did=15150&prodName=SSM6N56FE
SSM6N56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.13 EUR
8000+0.11 EUR
12000+0.11 EUR
20000+0.11 EUR
28000+0.1 EUR
Mindestbestellmenge: 4000 Stücke
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DF2B7M2SL,L3F docget.jsp?did=15756&prodName=DF2B7M2SL
DF2B7M2SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B7SL,L3F docget.jsp?did=15752&prodName=DF2B7SL
DF2B7SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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DF2S6.8UCT,L3F docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT
DF2S6.8UCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 10000 Stücke
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DF2S6.8UFS,L3M docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS
DF2S6.8UFS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 12 Stücke
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SSM3K337R,LF SSM3K337R_datasheet_en_20210105.pdf?did=14758&prodName=SSM3K337R
SSM3K337R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
6000+0.27 EUR
9000+0.25 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J133TU,LF docget.jsp?did=6640&prodName=SSM3J133TU
SSM3J133TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 5.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 57692 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
33+0.64 EUR
100+0.42 EUR
500+0.31 EUR
1000+0.27 EUR
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SSM6N56FE,LM docget.jsp?did=15150&prodName=SSM6N56FE
SSM6N56FE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 20V 0.8A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
FET Feature: Logic Level Gate, 1.5V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 32255 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
52+0.4 EUR
144+0.14 EUR
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DF2B7M2SL,L3F docget.jsp?did=15756&prodName=DF2B7M2SL
DF2B7M2SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 40W
Power Line Protection: No
auf Bestellung 2140 Stücke:
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AnzahlPrivatkunde
40+0.52 EUR
68+0.31 EUR
108+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
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DF2B7SL,L3F docget.jsp?did=15752&prodName=DF2B7SL
DF2B7SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.3VWM 16VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
auf Bestellung 2706 Stücke:
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AnzahlPrivatkunde
59+0.36 EUR
97+0.21 EUR
157+0.13 EUR
500+0.098 EUR
1000+0.086 EUR
2000+0.076 EUR
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DF2S6.8UCT,L3F docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT
DF2S6.8UCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 19630 Stücke:
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DF2S6.8UFS,L3M docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS
DF2S6.8UFS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 3943 Stücke:
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SSM3K337R,LF SSM3K337R_datasheet_en_20210105.pdf?did=14758&prodName=SSM3K337R
SSM3K337R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 38V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 38 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
auf Bestellung 12304 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
30+0.71 EUR
100+0.5 EUR
500+0.39 EUR
1000+0.32 EUR
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DF2S6.8UCT,L3F docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UCT
DF2S6.8UCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 19630 Stücke:
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DF2S6.8UFS,L3M docget.jsp?type=datasheet&lang=en&pid=DF2S6.8UFS
DF2S6.8UFS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM 22VC
auf Bestellung 3943 Stücke:
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2SB906-Y(TE16L1,NQ docget.jsp?did=20843&prodName=2SB906
2SB906-Y(TE16L1,NQ
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 60V 3A PW-MOLD
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 300mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 9MHz
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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74LCX00FT docget.jsp?did=15273&prodName=74LCX00FT
74LCX00FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 10 µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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