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TCK208G,LF TCK208G,LF Toshiba Semiconductor and Storage TCK207G_datasheet_en_20191213.pdf?did=14738&prodName=TCK207G Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18.1mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.90x0.90)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 2735 Stücke:
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27+0.67 EUR
39+0.46 EUR
44+0.41 EUR
100+0.35 EUR
250+0.33 EUR
500+0.31 EUR
1000+0.30 EUR
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TCK111G,LF TCK111G,LF Toshiba Semiconductor and Storage TCK111G_datasheet_en_20241029.pdf?did=147341&prodName=TCK111G Description: IC PWR SWITCH N-CHAN 1:1 6WCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8.3mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPC (1.5x1.0)
Fault Protection: Over Temperature, Reverse Current
Produkt ist nicht verfügbar
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TCK111G,LF TCK111G,LF Toshiba Semiconductor and Storage TCK111G_datasheet_en_20241029.pdf?did=147341&prodName=TCK111G Description: IC PWR SWITCH N-CHAN 1:1 6WCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8.3mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPC (1.5x1.0)
Fault Protection: Over Temperature, Reverse Current
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24+0.75 EUR
27+0.67 EUR
100+0.59 EUR
250+0.55 EUR
500+0.52 EUR
1000+0.50 EUR
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74LCX244FT 74LCX244FT Toshiba Semiconductor and Storage docget.jsp?did=14591&prodName=74LCX244FT Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 7500 Stücke:
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74LCX244FT 74LCX244FT Toshiba Semiconductor and Storage docget.jsp?did=14591&prodName=74LCX244FT Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Part Status: Active
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31+0.58 EUR
44+0.41 EUR
49+0.36 EUR
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250+0.29 EUR
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1000+0.26 EUR
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TB6551FAG(C8OEL,HZ TB6551FAG(C8OEL,HZ Toshiba Semiconductor and Storage docget.jsp?did=16009&prodName=TB6551FAG Description: IC MOTOR CONTROLLER PAR 24SSOP
Produkt ist nicht verfügbar
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1SS361,LJ(CT 1SS361,LJ(CT Toshiba Semiconductor and Storage 1SS361_datasheet_en_20211013.pdf?did=3336&prodName=1SS361 Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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RN1905,LF(CT RN1905,LF(CT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
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3000+0.09 EUR
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RN1906,LF(CT RN1906,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1906 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
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RN2902,LF(CT RN2902,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 30000 Stücke:
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6000+0.08 EUR
15000+0.07 EUR
30000+0.06 EUR
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RN2903,LF(CT RN2903,LF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
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3000+0.06 EUR
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RN2904,LF(CT RN2904,LF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
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RN4901,LF(CT RN4901,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4901 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
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RN1102,LF(CT RN1102,LF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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RN1102MFV,L3F RN1102MFV,L3F Toshiba Semiconductor and Storage RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 16000 Stücke:
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8000+0.06 EUR
16000+0.05 EUR
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RN1105,LF(CT RN1105,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1105 Description: TRANS PREBIAS NPN 50V 0.1W SSM
Produkt ist nicht verfügbar
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RN1106,LF(CT RN1106,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1106 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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3000+0.06 EUR
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RN1904,LF(CT RN1904,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902 Description: TRANS 2NPN PREBIAS 0.2W US6
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RN4905,LF(CT RN4905,LF(CT Toshiba Semiconductor and Storage RN4905_datasheet_en_20210824.pdf?did=18956&prodName=RN4905 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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RN4983,LF(CT RN4983,LF(CT Toshiba Semiconductor and Storage RN4983_datasheet_en_20210824.pdf?did=18976&prodName=RN4983 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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RN4984,LF(CT RN4984,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4984 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
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RN4987,LF(CT RN4987,LF(CT Toshiba Semiconductor and Storage RN4987_datasheet_en_20210824.pdf?did=18985&prodName=RN4987 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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TC7SHU04FU,LJ(CT TC7SHU04FU,LJ(CT Toshiba Semiconductor and Storage TC7SHU04FU_datasheet_en_20170516.pdf?did=30519&prodName=TC7SHU04FU Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.3V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SH04FU,LJ(CT TC7SH04FU,LJ(CT Toshiba Semiconductor and Storage TC7SH04FU_datasheet_en_20170516.pdf?did=30515&prodName=TC7SH04FU Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 33000 Stücke:
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3000+0.08 EUR
6000+0.07 EUR
9000+0.07 EUR
15000+0.06 EUR
21000+0.06 EUR
30000+0.06 EUR
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TC7SH08F,LJ(CT TC7SH08F,LJ(CT Toshiba Semiconductor and Storage TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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3000+0.08 EUR
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TC7SH125F,LJ(CT TC7SH125F,LJ(CT Toshiba Semiconductor and Storage TC7SH125F_datasheet_en_20171221.pdf?did=435&prodName=TC7SH125F Description: IC BUFFER NON-INVERT 5.5V SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SMV
auf Bestellung 3000 Stücke:
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3000+0.11 EUR
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TC7SH32F,LJ(CT TC7SH32F,LJ(CT Toshiba Semiconductor and Storage TC7SH32FU_datasheet_en_20170516.pdf?did=30319&prodName=TC7SH32FU Description: IC GATE OR 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
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TC7SZ02FU,LJ(CT TC7SZ02FU,LJ(CT Toshiba Semiconductor and Storage TC7SZ02FU_datasheet_en_20170517.pdf?did=30520&prodName=TC7SZ02FU Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SZ05F,LJ(CT TC7SZ05F,LJ(CT Toshiba Semiconductor and Storage TC7SZ05F_datasheet_en_20171221.pdf?did=5950&prodName=TC7SZ05F Description: IC INVERTER 1CH 1-INP SMV
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TCR2EE33,LM(CT TCR2EE33,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE45,LM(CT TCR2EE45,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.11 EUR
Mindestbestellmenge: 4000
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TCR2EE50,LM(CT TCR2EE50,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SS361,LJ(CT 1SS361,LJ(CT Toshiba Semiconductor and Storage 1SS361_datasheet_en_20211013.pdf?did=3336&prodName=1SS361 Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
91+0.19 EUR
133+0.13 EUR
500+0.09 EUR
1000+0.09 EUR
Mindestbestellmenge: 56
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RN1102,LF(CT RN1102,LF(CT Toshiba Semiconductor and Storage Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1102MFV,L3F RN1102MFV,L3F Toshiba Semiconductor and Storage RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 27430 Stücke:
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53+0.33 EUR
87+0.20 EUR
140+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 53
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RN1105,LF(CT RN1105,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1105 Description: TRANS PREBIAS NPN 50V 0.1W SSM
auf Bestellung 7 Stücke:
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RN1106,LF(CT RN1106,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18746&prodName=RN1106 Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5999 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
71+0.25 EUR
145+0.12 EUR
500+0.10 EUR
1000+0.07 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
RN1408,LF(B RN1408,LF(B Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1408 Description: TRANS PREBIAS NPN 50V 0.2W SMINI
auf Bestellung 9000 Stücke:
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RN1409,LF RN1409,LF Toshiba Semiconductor and Storage docget.jsp?did=18789&prodName=RN1409 Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 14443 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
107+0.17 EUR
173+0.10 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
RN1902,LF(CT RN1902,LF(CT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1904,LF(CT RN1904,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 8975 Stücke:
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RN1905,LF(CT RN1905,LF(CT Toshiba Semiconductor and Storage RN190x.pdf Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 4937 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
43+0.41 EUR
100+0.22 EUR
500+0.14 EUR
1000+0.10 EUR
Mindestbestellmenge: 36
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RN1905FE,LF(CB RN1905FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1902FE Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 10961 Stücke:
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RN1906,LF(CT RN1906,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1906 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5680 Stücke:
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RN1910FE,LF(CT RN1910FE,LF(CT Toshiba Semiconductor and Storage RN1910FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1910FE Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 4750 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
60+0.30 EUR
122+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LF(CB RN2107,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2107 Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8975 Stücke:
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RN2110,LF(CB RN2110,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110 Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 2950 Stücke:
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RN2111,LF(CB RN2111,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2110 Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8968 Stücke:
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RN2112,LF(CB RN2112,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2112 Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 9000 Stücke:
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RN2115,LF(CB RN2115,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 9000 Stücke:
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RN2116,LF(CB RN2116,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2114 Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8940 Stücke:
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RN2409,LF(B RN2409,LF(B Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2407 Description: TRANS PREBIAS PNP 50V 0.2W SMINI
auf Bestellung 8975 Stücke:
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RN2902,LF(CT RN2902,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 33038 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
42+0.43 EUR
100+0.23 EUR
500+0.15 EUR
1000+0.10 EUR
Mindestbestellmenge: 35
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RN2902FE,LF(CT RN2902FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=19092&prodName=RN2906FE Description: TRANS 2PNP PREBIAS 0.2W ES6
Produkt ist nicht verfügbar
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RN2903,LF(CT RN2903,LF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
107+0.17 EUR
159+0.11 EUR
500+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 77
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RN2904,LF(CT RN2904,LF(CT Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
58+0.30 EUR
119+0.15 EUR
500+0.12 EUR
1000+0.09 EUR
Mindestbestellmenge: 40
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RN2904FE,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2904FE Description: TRANS PREBIAS 2PNP 50V 100MW ES6
Produkt ist nicht verfügbar
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RN2906,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2906 Description: TRANS PREBIAS 2PNP 50V 0.2W US6
Produkt ist nicht verfügbar
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RN2907FE,LF(CT RN2907FE,LF(CT Toshiba Semiconductor and Storage RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
Mindestbestellmenge: 48
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RN2910FE,LF(CB RN2910FE,LF(CB Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2910FE Description: TRANS 2PNP PREBIAS 0.1W ES6
auf Bestellung 11949 Stücke:
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TCK208G,LF TCK207G_datasheet_en_20191213.pdf?did=14738&prodName=TCK207G
TCK208G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 18.1mOhm
Input Type: Non-Inverting
Voltage - Load: 0.75V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.90x0.90)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 2735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
39+0.46 EUR
44+0.41 EUR
100+0.35 EUR
250+0.33 EUR
500+0.31 EUR
1000+0.30 EUR
Mindestbestellmenge: 27
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TCK111G,LF TCK111G_datasheet_en_20241029.pdf?did=147341&prodName=TCK111G
TCK111G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 6WCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8.3mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPC (1.5x1.0)
Fault Protection: Over Temperature, Reverse Current
Produkt ist nicht verfügbar
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TCK111G,LF TCK111G_datasheet_en_20241029.pdf?did=147341&prodName=TCK111G
TCK111G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 6WCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 8.3mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WCSPC (1.5x1.0)
Fault Protection: Over Temperature, Reverse Current
auf Bestellung 2621 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
24+0.75 EUR
27+0.67 EUR
100+0.59 EUR
250+0.55 EUR
500+0.52 EUR
1000+0.50 EUR
Mindestbestellmenge: 17
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74LCX244FT docget.jsp?did=14591&prodName=74LCX244FT
74LCX244FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.25 EUR
5000+0.24 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
74LCX244FT docget.jsp?did=14591&prodName=74LCX244FT
74LCX244FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 9105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
44+0.41 EUR
49+0.36 EUR
100+0.31 EUR
250+0.29 EUR
500+0.28 EUR
1000+0.26 EUR
Mindestbestellmenge: 31
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TB6551FAG(C8OEL,HZ docget.jsp?did=16009&prodName=TB6551FAG
TB6551FAG(C8OEL,HZ
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR CONTROLLER PAR 24SSOP
Produkt ist nicht verfügbar
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1SS361,LJ(CT 1SS361_datasheet_en_20211013.pdf?did=3336&prodName=1SS361
1SS361,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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RN1905,LF(CT RN190x.pdf
RN1905,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
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RN1906,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1906
RN1906,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN2902,LF(CT docget.jsp?did=18907&prodName=RN2906
RN2902,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
6000+0.08 EUR
15000+0.07 EUR
30000+0.06 EUR
Mindestbestellmenge: 3000
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RN2903,LF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2903,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
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RN2904,LF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2904,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
Mindestbestellmenge: 3000
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RN4901,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4901
RN4901,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1102,LF(CT
RN1102,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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RN1102MFV,L3F RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV
RN1102MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.06 EUR
16000+0.05 EUR
Mindestbestellmenge: 8000
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RN1105,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1105
RN1105,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1W SSM
Produkt ist nicht verfügbar
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RN1106,LF(CT docget.jsp?did=18746&prodName=RN1106
RN1106,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
Mindestbestellmenge: 3000
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RN1904,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1902
RN1904,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4905,LF(CT RN4905_datasheet_en_20210824.pdf?did=18956&prodName=RN4905
RN4905,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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RN4983,LF(CT RN4983_datasheet_en_20210824.pdf?did=18976&prodName=RN4983
RN4983,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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RN4984,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN4984
RN4984,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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RN4987,LF(CT RN4987_datasheet_en_20210824.pdf?did=18985&prodName=RN4987
RN4987,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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TC7SHU04FU,LJ(CT TC7SHU04FU_datasheet_en_20170516.pdf?did=30519&prodName=TC7SHU04FU
TC7SHU04FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.7V
Input Logic Level - Low: 0.3V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SH04FU,LJ(CT TC7SH04FU_datasheet_en_20170516.pdf?did=30515&prodName=TC7SH04FU
TC7SH04FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.07 EUR
9000+0.07 EUR
15000+0.06 EUR
21000+0.06 EUR
30000+0.06 EUR
Mindestbestellmenge: 3000
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TC7SH08F,LJ(CT TC7SH08FU_datasheet_en_20181214.pdf?did=29870&prodName=TC7SH08FU
TC7SH08F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
Mindestbestellmenge: 3000
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TC7SH125F,LJ(CT TC7SH125F_datasheet_en_20171221.pdf?did=435&prodName=TC7SH125F
TC7SH125F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
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TC7SH32F,LJ(CT TC7SH32FU_datasheet_en_20170516.pdf?did=30319&prodName=TC7SH32FU
TC7SH32F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SMV
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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TC7SZ02FU,LJ(CT TC7SZ02FU_datasheet_en_20170517.pdf?did=30520&prodName=TC7SZ02FU
TC7SZ02FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SZ05F,LJ(CT TC7SZ05F_datasheet_en_20171221.pdf?did=5950&prodName=TC7SZ05F
TC7SZ05F,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP SMV
Packaging: Tape & Reel (TR)
Features: Open Drain
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Output High, Low: -, 32mA
Number of Inputs: 1
Supplier Device Package: SMV
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TCR2EE33,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE33,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE45,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE45,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.11 EUR
Mindestbestellmenge: 4000
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TCR2EE50,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EE50,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 5V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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1SS361,LJ(CT 1SS361_datasheet_en_20211013.pdf?did=3336&prodName=1SS361
1SS361,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SSM
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
91+0.19 EUR
133+0.13 EUR
500+0.09 EUR
1000+0.09 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
RN1102,LF(CT
RN1102,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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RN1102MFV,L3F RN1102MFV_datasheet_en_20210818.pdf?did=5879&prodName=RN1102MFV
RN1102MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Supplier Device Package: VESM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 27430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
87+0.20 EUR
140+0.13 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 53
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RN1105,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1105
RN1105,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1W SSM
auf Bestellung 7 Stücke:
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RN1106,LF(CT docget.jsp?did=18746&prodName=RN1106
RN1106,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 5999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
71+0.25 EUR
145+0.12 EUR
500+0.10 EUR
1000+0.07 EUR
Mindestbestellmenge: 48
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RN1408,LF(B docget.jsp?type=datasheet&lang=en&pid=RN1408
RN1408,LF(B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.2W SMINI
auf Bestellung 9000 Stücke:
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RN1409,LF docget.jsp?did=18789&prodName=RN1409
RN1409,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 14443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
107+0.17 EUR
173+0.10 EUR
500+0.07 EUR
1000+0.07 EUR
Mindestbestellmenge: 67
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RN1902,LF(CT RN190x.pdf
RN1902,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1904,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1902
RN1904,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 8975 Stücke:
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RN1905,LF(CT RN190x.pdf
RN1905,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 4937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
43+0.41 EUR
100+0.22 EUR
500+0.14 EUR
1000+0.10 EUR
Mindestbestellmenge: 36
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RN1905FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN1902FE
RN1905FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
auf Bestellung 10961 Stücke:
Lieferzeit 10-14 Tag (e)
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RN1906,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1906
RN1906,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5680 Stücke:
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RN1910FE,LF(CT RN1910FE_datasheet_en_20211223.pdf?did=19070&prodName=RN1910FE
RN1910FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: ES6
auf Bestellung 4750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
60+0.30 EUR
122+0.14 EUR
500+0.12 EUR
1000+0.08 EUR
2000+0.07 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
RN2107,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2107
RN2107,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8975 Stücke:
Lieferzeit 10-14 Tag (e)
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RN2110,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2110
RN2110,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 2950 Stücke:
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RN2111,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2110
RN2111,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8968 Stücke:
Lieferzeit 10-14 Tag (e)
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RN2112,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2112
RN2112,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 9000 Stücke:
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RN2115,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2115,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 9000 Stücke:
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RN2116,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2114
RN2116,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1W SSM
auf Bestellung 8940 Stücke:
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RN2409,LF(B docget.jsp?type=datasheet&lang=en&pid=RN2407
RN2409,LF(B
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.2W SMINI
auf Bestellung 8975 Stücke:
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RN2902,LF(CT docget.jsp?did=18907&prodName=RN2906
RN2902,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 33038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
42+0.43 EUR
100+0.23 EUR
500+0.15 EUR
1000+0.10 EUR
Mindestbestellmenge: 35
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RN2902FE,LF(CT docget.jsp?did=19092&prodName=RN2906FE
RN2902FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W ES6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2903,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
107+0.17 EUR
159+0.11 EUR
500+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 77
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RN2904,LF(CT RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2904,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
58+0.30 EUR
119+0.15 EUR
500+0.12 EUR
1000+0.09 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
RN2904FE,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN2904FE
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MW ES6
Produkt ist nicht verfügbar
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RN2906,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN2906
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2907FE,LF(CT RN2907FE_datasheet_en_20211223.pdf?did=19094&prodName=RN2907FE
RN2907FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.23 EUR
126+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
Mindestbestellmenge: 48
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RN2910FE,LF(CB docget.jsp?type=datasheet&lang=en&pid=RN2910FE
RN2910FE,LF(CB
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.1W ES6
auf Bestellung 11949 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
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