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TK65G10N1,RQ TK65G10N1,RQ Toshiba Semiconductor and Storage docget.jsp?did=14122&prodName=TK65G10N1 Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
TK65S04N1L,LQ TK65S04N1L,LQ Toshiba Semiconductor and Storage TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L Description: MOSFET N-CH 40V 65A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 7976 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.58 EUR
10+ 3.79 EUR
100+ 3.02 EUR
500+ 2.55 EUR
1000+ 2.17 EUR
Mindestbestellmenge: 6
TK65S04N1L,LQ TK65S04N1L,LQ Toshiba Semiconductor and Storage TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L Description: MOSFET N-CH 40V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+2.06 EUR
6000+ 1.98 EUR
Mindestbestellmenge: 2000
TK6A80E,S4X TK6A80E,S4X Toshiba Semiconductor and Storage docget.jsp?did=14673&prodName=TK6A80E Description: MOSFET N-CH 800V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.5 EUR
10+ 3.73 EUR
Mindestbestellmenge: 6
TK7A90E,S4X TK7A90E,S4X Toshiba Semiconductor and Storage docget.jsp?did=14675&prodName=TK7A90E Description: MOSFET N-CH 900V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 95 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.9 EUR
10+ 3.23 EUR
Mindestbestellmenge: 7
TK7J90E,S1E TK7J90E,S1E Toshiba Semiconductor and Storage TK7J90E_datasheet_en_20140304.pdf?did=14676&prodName=TK7J90E Description: MOSFET N-CH 900V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
TK7P60W5,RVQ TK7P60W5,RVQ Toshiba Semiconductor and Storage TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5 Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 1203 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.67 EUR
10+ 3.06 EUR
100+ 2.44 EUR
500+ 2.06 EUR
1000+ 1.75 EUR
Mindestbestellmenge: 8
TK7P60W5,RVQ TK7P60W5,RVQ Toshiba Semiconductor and Storage TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5 Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
TK7S10N1Z,LQ TK7S10N1Z,LQ Toshiba Semiconductor and Storage TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 5599 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
10+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 8
TK7S10N1Z,LQ TK7S10N1Z,LQ Toshiba Semiconductor and Storage TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.42 EUR
Mindestbestellmenge: 2000
TK90S06N1L,LQ TK90S06N1L,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
auf Bestellung 713 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.12 EUR
10+ 4.25 EUR
100+ 3.38 EUR
500+ 2.86 EUR
Mindestbestellmenge: 6
TK90S06N1L,LQ TK90S06N1L,LQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
Produkt ist nicht verfügbar
TK9A90E,S4X TK9A90E,S4X Toshiba Semiconductor and Storage docget.jsp?did=14236&prodName=TK9A90E Description: MOSFET N-CH 900V 9A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
TK9J90E,S1E TK9J90E,S1E Toshiba Semiconductor and Storage TK9J90E_datasheet_en_20140228.pdf?did=14044&prodName=TK9J90E Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
TPH1110ENH,L1Q TPH1110ENH,L1Q Toshiba Semiconductor and Storage TPH1110ENH_datasheet_en_20140225.pdf?did=14594&prodName=TPH1110ENH Description: MOSFET N-CH 200V 7.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Produkt ist nicht verfügbar
TPH1110ENH,L1Q TPH1110ENH,L1Q Toshiba Semiconductor and Storage TPH1110ENH_datasheet_en_20140225.pdf?did=14594&prodName=TPH1110ENH Description: MOSFET N-CH 200V 7.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Produkt ist nicht verfügbar
TPH2010FNH,L1Q TPH2010FNH,L1Q Toshiba Semiconductor and Storage TPH2010FNH_datasheet_en_20140225.pdf?did=14595&prodName=TPH2010FNH Description: MOSFET N-CH 250V 5.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 8954 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.74 EUR
10+ 3.06 EUR
100+ 2.38 EUR
500+ 2.02 EUR
1000+ 1.65 EUR
2000+ 1.55 EUR
Mindestbestellmenge: 7
TPH2010FNH,L1Q TPH2010FNH,L1Q Toshiba Semiconductor and Storage TPH2010FNH_datasheet_en_20140225.pdf?did=14595&prodName=TPH2010FNH Description: MOSFET N-CH 250V 5.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.48 EUR
Mindestbestellmenge: 5000
TPH5900CNH,L1Q TPH5900CNH,L1Q Toshiba Semiconductor and Storage TPH5900CNH_datasheet_en_20140225.pdf?did=14559&prodName=TPH5900CNH Description: MOSFET N-CH 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 9428 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.29 EUR
14+ 1.89 EUR
100+ 1.47 EUR
500+ 1.24 EUR
1000+ 1.01 EUR
2000+ 0.95 EUR
Mindestbestellmenge: 12
TPH5900CNH,L1Q TPH5900CNH,L1Q Toshiba Semiconductor and Storage TPH5900CNH_datasheet_en_20140225.pdf?did=14559&prodName=TPH5900CNH Description: MOSFET N-CH 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.94 EUR
Mindestbestellmenge: 5000
TPN1110ENH,L1Q TPN1110ENH,L1Q Toshiba Semiconductor and Storage TPN1110ENH_datasheet_en_20140227.pdf?did=14596&prodName=TPN1110ENH Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 34738 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.85 EUR
10+ 3.15 EUR
100+ 2.45 EUR
500+ 2.08 EUR
1000+ 1.69 EUR
2000+ 1.59 EUR
Mindestbestellmenge: 7
TPN1110ENH,L1Q TPN1110ENH,L1Q Toshiba Semiconductor and Storage TPN1110ENH_datasheet_en_20140227.pdf?did=14596&prodName=TPN1110ENH Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.52 EUR
10000+ 1.45 EUR
Mindestbestellmenge: 5000
TPN2010FNH,L1Q TPN2010FNH,L1Q Toshiba Semiconductor and Storage TPN2010FNH_datasheet_en_20140225.pdf?did=14597&prodName=TPN2010FNH Description: MOSFET N-CH 250V 5.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 5955 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 2.98 EUR
100+ 2.37 EUR
500+ 2 EUR
1000+ 1.7 EUR
2000+ 1.62 EUR
Mindestbestellmenge: 8
TPN2010FNH,L1Q TPN2010FNH,L1Q Toshiba Semiconductor and Storage TPN2010FNH_datasheet_en_20140225.pdf?did=14597&prodName=TPN2010FNH Description: MOSFET N-CH 250V 5.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.56 EUR
Mindestbestellmenge: 5000
TPN5900CNH,L1Q TPN5900CNH,L1Q Toshiba Semiconductor and Storage TPN5900CNH_datasheet_en_20140227.pdf?did=14560&prodName=TPN5900CNH Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 4756 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.17 EUR
11+ 2.59 EUR
100+ 2.01 EUR
500+ 1.71 EUR
1000+ 1.39 EUR
2000+ 1.31 EUR
Mindestbestellmenge: 9
TPN5900CNH,L1Q TPN5900CNH,L1Q Toshiba Semiconductor and Storage TPN5900CNH_datasheet_en_20140227.pdf?did=14560&prodName=TPN5900CNH Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Produkt ist nicht verfügbar
2SA1943N(S1,E,S) 2SA1943N(S1,E,S) Toshiba Semiconductor and Storage 2SA1943N_datasheet_en_20150512.pdf?did=13908&prodName=2SA1943N Description: TRANS PNP 230V 15A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
Produkt ist nicht verfügbar
TK31E60X,S1X TK31E60X,S1X Toshiba Semiconductor and Storage docget.jsp?did=14963&prodName=TK31E60X Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
TC62D723FNG,C,EL TC62D723FNG,C,EL Toshiba Semiconductor and Storage TC62D723FNG_datasheet_en_20130918.pdf?did=12811&prodName=TC62D723FNG Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 9810 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.06 EUR
10+ 7.24 EUR
25+ 6.85 EUR
100+ 5.93 EUR
250+ 5.63 EUR
500+ 5.05 EUR
1000+ 4.26 EUR
Mindestbestellmenge: 4
TC62D748CFNAG(CEBH TC62D748CFNAG(CEBH Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC62D748CFNAG Description: IC LED DRVR CONST CURR 24-SSOP
auf Bestellung 3726 Stücke:
Lieferzeit 21-28 Tag (e)
TC62D748CFNAG(CEBH TC62D748CFNAG(CEBH Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC62D748CFNAG Description: IC LED DRVR CONST CURR 24-SSOP
auf Bestellung 3726 Stücke:
Lieferzeit 21-28 Tag (e)
TC62D723FNG,C,EL TC62D723FNG,C,EL Toshiba Semiconductor and Storage TC62D723FNG_datasheet_en_20130918.pdf?did=12811&prodName=TC62D723FNG Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+4.05 EUR
6000+ 3.9 EUR
Mindestbestellmenge: 2000
TC62D748CFNAG(CEBH TC62D748CFNAG(CEBH Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC62D748CFNAG Description: IC LED DRVR CONST CURR 24-SSOP
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
TB6865AFG TB6865AFG Toshiba Semiconductor and Storage docget.jsp?did=15507&prodName=TB6865AFG Description: IC WIRELESS POWER TX 100 LQFP
Produkt ist nicht verfügbar
TB6860WBG,EL TB6860WBG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB6860WBG Description: IC WIRELESS POWER TX 39WCSP
auf Bestellung 4299 Stücke:
Lieferzeit 21-28 Tag (e)
TB6860WBG,EL TB6860WBG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB6860WBG Description: IC WIRELESS POWER TX 39WCSP
Produkt ist nicht verfügbar
ULN2003APG(C,N,HZA Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=ULN2003APG Description: TRANS 7 NPN DARL 50V 500MA 16DIP
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
TB6860WBG,EL TB6860WBG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TB6860WBG Description: IC WIRELESS POWER TX 39WCSP
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
TC75S70L6X,LF TC75S70L6X,LF Toshiba Semiconductor and Storage TC75S70L6X_datasheet_en_20201126.pdf?did=14702&prodName=TC75S70L6X Description: IC COMPARATOR 1 GEN PUR 6MP6C
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.3V ~ 5.5V
Supplier Device Package: 6-MP6C (1.45x1.0)
Propagation Delay (Max): 800ns
Current - Quiescent (Max): 35µA
Voltage - Input Offset (Max): 6mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 18mA @ 3V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.42 EUR
Mindestbestellmenge: 5000
TC75W70L8X,LF TC75W70L8X,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC75W70L8X Description: IC OPAMP CMOS COMPARATOR SOT-902
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
TC75S70L6X,LF TC75S70L6X,LF Toshiba Semiconductor and Storage TC75S70L6X_datasheet_en_20201126.pdf?did=14702&prodName=TC75S70L6X Description: IC COMPARATOR 1 GEN PUR 6MP6C
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.3V ~ 5.5V
Supplier Device Package: 6-MP6C (1.45x1.0)
Propagation Delay (Max): 800ns
Current - Quiescent (Max): 35µA
Voltage - Input Offset (Max): 6mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 18mA @ 3V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
25+ 1.08 EUR
26+ 1 EUR
100+ 0.8 EUR
250+ 0.75 EUR
500+ 0.63 EUR
1000+ 0.49 EUR
2500+ 0.45 EUR
Mindestbestellmenge: 21
TC75W70L8X,LF TC75W70L8X,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC75W70L8X Description: IC OPAMP CMOS COMPARATOR SOT-902
auf Bestellung 9840 Stücke:
Lieferzeit 21-28 Tag (e)
TC75W70L8X,LF TC75W70L8X,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC75W70L8X Description: IC OPAMP CMOS COMPARATOR SOT-902
auf Bestellung 9840 Stücke:
Lieferzeit 21-28 Tag (e)
TLP5214(TP,E TLP5214(TP,E Toshiba Semiconductor and Storage Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 32ns, 18ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
1500+9.46 EUR
Mindestbestellmenge: 1500
TLP5214(TP,E TLP5214(TP,E Toshiba Semiconductor and Storage Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 32ns, 18ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2969 Stücke:
Lieferzeit 21-28 Tag (e)
2+19.06 EUR
10+ 13.82 EUR
100+ 11.42 EUR
500+ 10 EUR
Mindestbestellmenge: 2
TL2FL-DW1,L TL2FL-DW1,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL2FL-DW1,L Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL2FL-LL1,L TL2FL-LL1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-LL1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL2FL-LW1,L TL2FL-LW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-LW1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL2FL-NW0,L TL2FL-NW0,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-NW0,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL2FL-NW1,L TL2FL-NW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-NW1,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL2FL-WH1,L TL2FL-WH1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-WH1,L&lang=en&type=datasheet Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL3GB-DW1,L TL3GB-DW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-DW1,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL3GB-LL1,L TL3GB-LL1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-LL1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL3GB-LW1,L TL3GB-LW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-LW1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL3GB-NW0,L TL3GB-NW0,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-NW0,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL3GB-NW1,L TL3GB-NW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-NW1,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL3GB-WH1,L TL3GB-WH1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-WH1,L&lang=en&type=datasheet Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL1F2-DW0,L TL1F2-DW0,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-DW0,L Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL1F2-NW0,L TL1F2-NW0,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW0,L Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1F2-NW1,L TL1F2-NW1,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW1,L Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TK65G10N1,RQ docget.jsp?did=14122&prodName=TK65G10N1
TK65G10N1,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 65A D2PAK
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
TK65S04N1L,LQ TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L
TK65S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 7976 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.58 EUR
10+ 3.79 EUR
100+ 3.02 EUR
500+ 2.55 EUR
1000+ 2.17 EUR
Mindestbestellmenge: 6
TK65S04N1L,LQ TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L
TK65S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+2.06 EUR
6000+ 1.98 EUR
Mindestbestellmenge: 2000
TK6A80E,S4X docget.jsp?did=14673&prodName=TK6A80E
TK6A80E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 800V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 600µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.5 EUR
10+ 3.73 EUR
Mindestbestellmenge: 6
TK7A90E,S4X docget.jsp?did=14675&prodName=TK7A90E
TK7A90E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 95 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.9 EUR
10+ 3.23 EUR
Mindestbestellmenge: 7
TK7J90E,S1E TK7J90E_datasheet_en_20140304.pdf?did=14676&prodName=TK7J90E
TK7J90E,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 700µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
TK7P60W5,RVQ TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5
TK7P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 1203 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.67 EUR
10+ 3.06 EUR
100+ 2.44 EUR
500+ 2.06 EUR
1000+ 1.75 EUR
Mindestbestellmenge: 8
TK7P60W5,RVQ TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5
TK7P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
TK7S10N1Z,LQ TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z
TK7S10N1Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 5599 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
10+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 8
TK7S10N1Z,LQ TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z
TK7S10N1Z,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+1.42 EUR
Mindestbestellmenge: 2000
TK90S06N1L,LQ
TK90S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
auf Bestellung 713 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.12 EUR
10+ 4.25 EUR
100+ 3.38 EUR
500+ 2.86 EUR
Mindestbestellmenge: 6
TK90S06N1L,LQ
TK90S06N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
Produkt ist nicht verfügbar
TK9A90E,S4X docget.jsp?did=14236&prodName=TK9A90E
TK9A90E,S4X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 9A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
TK9J90E,S1E TK9J90E_datasheet_en_20140228.pdf?did=14044&prodName=TK9J90E
TK9J90E,S1E
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 900µA
Supplier Device Package: TO-3P(N)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
TPH1110ENH,L1Q TPH1110ENH_datasheet_en_20140225.pdf?did=14594&prodName=TPH1110ENH
TPH1110ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Produkt ist nicht verfügbar
TPH1110ENH,L1Q TPH1110ENH_datasheet_en_20140225.pdf?did=14594&prodName=TPH1110ENH
TPH1110ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Produkt ist nicht verfügbar
TPH2010FNH,L1Q TPH2010FNH_datasheet_en_20140225.pdf?did=14595&prodName=TPH2010FNH
TPH2010FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 8954 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.74 EUR
10+ 3.06 EUR
100+ 2.38 EUR
500+ 2.02 EUR
1000+ 1.65 EUR
2000+ 1.55 EUR
Mindestbestellmenge: 7
TPH2010FNH,L1Q TPH2010FNH_datasheet_en_20140225.pdf?did=14595&prodName=TPH2010FNH
TPH2010FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+1.48 EUR
Mindestbestellmenge: 5000
TPH5900CNH,L1Q TPH5900CNH_datasheet_en_20140225.pdf?did=14559&prodName=TPH5900CNH
TPH5900CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 9428 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.29 EUR
14+ 1.89 EUR
100+ 1.47 EUR
500+ 1.24 EUR
1000+ 1.01 EUR
2000+ 0.95 EUR
Mindestbestellmenge: 12
TPH5900CNH,L1Q TPH5900CNH_datasheet_en_20140225.pdf?did=14559&prodName=TPH5900CNH
TPH5900CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.94 EUR
Mindestbestellmenge: 5000
TPN1110ENH,L1Q TPN1110ENH_datasheet_en_20140227.pdf?did=14596&prodName=TPN1110ENH
TPN1110ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 34738 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.85 EUR
10+ 3.15 EUR
100+ 2.45 EUR
500+ 2.08 EUR
1000+ 1.69 EUR
2000+ 1.59 EUR
Mindestbestellmenge: 7
TPN1110ENH,L1Q TPN1110ENH_datasheet_en_20140227.pdf?did=14596&prodName=TPN1110ENH
TPN1110ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 7.2A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 114mOhm @ 3.6A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+1.52 EUR
10000+ 1.45 EUR
Mindestbestellmenge: 5000
TPN2010FNH,L1Q TPN2010FNH_datasheet_en_20140225.pdf?did=14597&prodName=TPN2010FNH
TPN2010FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 5955 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
10+ 2.98 EUR
100+ 2.37 EUR
500+ 2 EUR
1000+ 1.7 EUR
2000+ 1.62 EUR
Mindestbestellmenge: 8
TPN2010FNH,L1Q TPN2010FNH_datasheet_en_20140225.pdf?did=14597&prodName=TPN2010FNH
TPN2010FNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 250V 5.6A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 2.8A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+1.56 EUR
Mindestbestellmenge: 5000
TPN5900CNH,L1Q TPN5900CNH_datasheet_en_20140227.pdf?did=14560&prodName=TPN5900CNH
TPN5900CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
auf Bestellung 4756 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.17 EUR
11+ 2.59 EUR
100+ 2.01 EUR
500+ 1.71 EUR
1000+ 1.39 EUR
2000+ 1.31 EUR
Mindestbestellmenge: 9
TPN5900CNH,L1Q TPN5900CNH_datasheet_en_20140227.pdf?did=14560&prodName=TPN5900CNH
TPN5900CNH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 150V 9A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
Power Dissipation (Max): 700mW (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
Produkt ist nicht verfügbar
2SA1943N(S1,E,S) 2SA1943N_datasheet_en_20150512.pdf?did=13908&prodName=2SA1943N
2SA1943N(S1,E,S)
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 230V 15A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 230 V
Power - Max: 150 W
Produkt ist nicht verfügbar
TK31E60X,S1X docget.jsp?did=14963&prodName=TK31E60X
TK31E60X,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 30.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Produkt ist nicht verfügbar
TC62D723FNG,C,EL TC62D723FNG_datasheet_en_20130918.pdf?did=12811&prodName=TC62D723FNG
TC62D723FNG,C,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 9810 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.06 EUR
10+ 7.24 EUR
25+ 6.85 EUR
100+ 5.93 EUR
250+ 5.63 EUR
500+ 5.05 EUR
1000+ 4.26 EUR
Mindestbestellmenge: 4
TC62D748CFNAG(CEBH docget.jsp?type=datasheet&lang=en&pid=TC62D748CFNAG
TC62D748CFNAG(CEBH
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR CONST CURR 24-SSOP
auf Bestellung 3726 Stücke:
Lieferzeit 21-28 Tag (e)
TC62D748CFNAG(CEBH docget.jsp?type=datasheet&lang=en&pid=TC62D748CFNAG
TC62D748CFNAG(CEBH
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR CONST CURR 24-SSOP
auf Bestellung 3726 Stücke:
Lieferzeit 21-28 Tag (e)
TC62D723FNG,C,EL TC62D723FNG_datasheet_en_20130918.pdf?did=12811&prodName=TC62D723FNG
TC62D723FNG,C,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR LINEAR 90MA 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 90mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-HTSSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+4.05 EUR
6000+ 3.9 EUR
Mindestbestellmenge: 2000
TC62D748CFNAG(CEBH docget.jsp?type=datasheet&lang=en&pid=TC62D748CFNAG
TC62D748CFNAG(CEBH
Hersteller: Toshiba Semiconductor and Storage
Description: IC LED DRVR CONST CURR 24-SSOP
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
TB6865AFG docget.jsp?did=15507&prodName=TB6865AFG
TB6865AFG
Hersteller: Toshiba Semiconductor and Storage
Description: IC WIRELESS POWER TX 100 LQFP
Produkt ist nicht verfügbar
TB6860WBG,EL docget.jsp?type=datasheet&lang=en&pid=TB6860WBG
TB6860WBG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC WIRELESS POWER TX 39WCSP
auf Bestellung 4299 Stücke:
Lieferzeit 21-28 Tag (e)
TB6860WBG,EL docget.jsp?type=datasheet&lang=en&pid=TB6860WBG
TB6860WBG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC WIRELESS POWER TX 39WCSP
Produkt ist nicht verfügbar
ULN2003APG(C,N,HZA docget.jsp?type=datasheet&lang=en&pid=ULN2003APG
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 7 NPN DARL 50V 500MA 16DIP
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
TB6860WBG,EL docget.jsp?type=datasheet&lang=en&pid=TB6860WBG
TB6860WBG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC WIRELESS POWER TX 39WCSP
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
TC75S70L6X,LF TC75S70L6X_datasheet_en_20201126.pdf?did=14702&prodName=TC75S70L6X
TC75S70L6X,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 6MP6C
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.3V ~ 5.5V
Supplier Device Package: 6-MP6C (1.45x1.0)
Propagation Delay (Max): 800ns
Current - Quiescent (Max): 35µA
Voltage - Input Offset (Max): 6mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 18mA @ 3V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.42 EUR
Mindestbestellmenge: 5000
TC75W70L8X,LF docget.jsp?type=datasheet&lang=en&pid=TC75W70L8X
TC75W70L8X,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP CMOS COMPARATOR SOT-902
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
TC75S70L6X,LF TC75S70L6X_datasheet_en_20201126.pdf?did=14702&prodName=TC75S70L6X
TC75S70L6X,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC COMPARATOR 1 GEN PUR 6MP6C
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.3V ~ 5.5V
Supplier Device Package: 6-MP6C (1.45x1.0)
Propagation Delay (Max): 800ns
Current - Quiescent (Max): 35µA
Voltage - Input Offset (Max): 6mV @ 3V
Current - Input Bias (Max): 1pA @ 3V
Current - Output (Typ): 18mA @ 3V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
25+ 1.08 EUR
26+ 1 EUR
100+ 0.8 EUR
250+ 0.75 EUR
500+ 0.63 EUR
1000+ 0.49 EUR
2500+ 0.45 EUR
Mindestbestellmenge: 21
TC75W70L8X,LF docget.jsp?type=datasheet&lang=en&pid=TC75W70L8X
TC75W70L8X,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP CMOS COMPARATOR SOT-902
auf Bestellung 9840 Stücke:
Lieferzeit 21-28 Tag (e)
TC75W70L8X,LF docget.jsp?type=datasheet&lang=en&pid=TC75W70L8X
TC75W70L8X,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP CMOS COMPARATOR SOT-902
auf Bestellung 9840 Stücke:
Lieferzeit 21-28 Tag (e)
TLP5214(TP,E
TLP5214(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 32ns, 18ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+9.46 EUR
Mindestbestellmenge: 1500
TLP5214(TP,E
TLP5214(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 32ns, 18ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2969 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+19.06 EUR
10+ 13.82 EUR
100+ 11.42 EUR
500+ 10 EUR
Mindestbestellmenge: 2
TL2FL-DW1,L docget.jsp?type=datasheet&lang=en&pid=TL2FL-DW1,L
TL2FL-DW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL2FL-LL1,L docget.jsp?pid=TL2FL-LL1,L&lang=en&type=datasheet
TL2FL-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL2FL-LW1,L docget.jsp?pid=TL2FL-LW1,L&lang=en&type=datasheet
TL2FL-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL2FL-NW0,L docget.jsp?pid=TL2FL-NW0,L&lang=en&type=datasheet
TL2FL-NW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL2FL-NW1,L docget.jsp?pid=TL2FL-NW1,L&lang=en&type=datasheet
TL2FL-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL2FL-WH1,L docget.jsp?pid=TL2FL-WH1,L&lang=en&type=datasheet
TL2FL-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL3GB-DW1,L docget.jsp?pid=TL3GB-DW1,L&lang=en&type=datasheet
TL3GB-DW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL3GB-LL1,L docget.jsp?pid=TL3GB-LL1,L&lang=en&type=datasheet
TL3GB-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
TL3GB-LW1,L docget.jsp?pid=TL3GB-LW1,L&lang=en&type=datasheet
TL3GB-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
TL3GB-NW0,L docget.jsp?pid=TL3GB-NW0,L&lang=en&type=datasheet
TL3GB-NW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL3GB-NW1,L docget.jsp?pid=TL3GB-NW1,L&lang=en&type=datasheet
TL3GB-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL3GB-WH1,L docget.jsp?pid=TL3GB-WH1,L&lang=en&type=datasheet
TL3GB-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
TL1F2-DW0,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-DW0,L
TL1F2-DW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
TL1F2-NW0,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW0,L
TL1F2-NW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
TL1F2-NW1,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW1,L
TL1F2-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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