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SSM6H19NU,LF SSM6H19NU,LF Toshiba Semiconductor and Storage docget.jsp?did=14715&prodName=SSM6H19NU Description: MOSFET N-CH 40V 2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
38+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24 Stücke
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SSM6H19NU,LF SSM6H19NU,LF Toshiba Semiconductor and Storage docget.jsp?did=14715&prodName=SSM6H19NU Description: MOSFET N-CH 40V 2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
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2SC4116-Y,LF 2SC4116-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
auf Bestellung 7314 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
122+0.14 EUR
197+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
Mindestbestellmenge: 72 Stücke
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2SC6026MFVGR,L3F 2SC6026MFVGR,L3F Toshiba Semiconductor and Storage docget.jsp?did=6106&prodName=2SC6026MFV Description: TRANS NPN 50V 0.15A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 26375 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
103+0.17 EUR
167+0.11 EUR
500+0.077 EUR
1000+0.068 EUR
2000+0.06 EUR
Mindestbestellmenge: 63 Stücke
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RN1302,LF RN1302,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1306 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 11612 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
84+0.21 EUR
134+0.13 EUR
500+0.096 EUR
1000+0.085 EUR
Mindestbestellmenge: 50 Stücke
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RN1305,LF RN1305,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1306 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 4941 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
84+0.21 EUR
134+0.13 EUR
500+0.096 EUR
1000+0.085 EUR
Mindestbestellmenge: 50 Stücke
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RN1306,LF RN1306,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1306 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 3522 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
113+0.16 EUR
183+0.096 EUR
500+0.07 EUR
1000+0.061 EUR
Mindestbestellmenge: 72 Stücke
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2SC6026MFVGR,L3F 2SC6026MFVGR,L3F Toshiba Semiconductor and Storage docget.jsp?did=6106&prodName=2SC6026MFV Description: TRANS NPN 50V 0.15A VESM
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
8000+0.046 EUR
16000+0.042 EUR
Mindestbestellmenge: 8000 Stücke
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2SC4116-Y,LF 2SC4116-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19292&prodName=2SC4116 Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.045 EUR
6000+0.04 EUR
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RN1302,LF RN1302,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1306 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.07 EUR
6000+0.063 EUR
9000+0.059 EUR
Mindestbestellmenge: 3000 Stücke
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RN1305,LF RN1305,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1306 Description: TRANS PREBIAS NPN 50V 0.1A SC70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN1306,LF RN1306,LF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1306 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.05 EUR
Mindestbestellmenge: 3000 Stücke
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RN2310,LF RN2310,LF Toshiba Semiconductor and Storage docget.jsp?did=18870&prodName=RN2311 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
117+0.15 EUR
188+0.094 EUR
500+0.068 EUR
1000+0.06 EUR
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RN2310,LF RN2310,LF Toshiba Semiconductor and Storage docget.jsp?did=18870&prodName=RN2311 Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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HN1A01FE-Y,LF HN1A01FE-Y,LF Toshiba Semiconductor and Storage HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE Description: TRANS 2PNP 50V 0.15A ES6
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar
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HN1A01FU-Y,LF HN1A01FU-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19142&prodName=HN1A01FU Description: TRANS 2PNP DUAL 50V 150MA US6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
auf Bestellung 3119 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
84+0.21 EUR
135+0.13 EUR
500+0.096 EUR
1000+0.084 EUR
Mindestbestellmenge: 50 Stücke
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RN1905,LF RN1905,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5950 Stücke:
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RN1906,LF RN1906,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5840 Stücke:
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RN1907,LF RN1907,LF Toshiba Semiconductor and Storage Description: TRANS 2NPN PREBIAS 0.2W US6
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2902,LF RN2902,LF Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LF RN2903,LF Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2903 Description: TRANS PREBIAS 2PNP 50V 100MA US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2904,LF RN2904,LF Toshiba Semiconductor and Storage Description: TRANS 2PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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RN2906,LF RN2906,LF Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
auf Bestellung 5268 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
78+0.23 EUR
126+0.14 EUR
500+0.1 EUR
1000+0.091 EUR
Mindestbestellmenge: 48 Stücke
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RN2911,LF RN2911,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2910 Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 5991 Stücke:
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RN4901,LF RN4901,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4901 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4902,LF RN4902,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4902 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
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RN4904,LF RN4904,LF Toshiba Semiconductor and Storage docget.jsp?did=18954&prodName=RN4904 Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
80+0.22 EUR
128+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 50 Stücke
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RN4906,LF RN4906,LF Toshiba Semiconductor and Storage RN4906_datasheet_en_20210824.pdf?did=18959&prodName=RN4906 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
78+0.23 EUR
125+0.14 EUR
500+0.1 EUR
1000+0.091 EUR
Mindestbestellmenge: 48 Stücke
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RN4907,LF RN4907,LF Toshiba Semiconductor and Storage RN4907_datasheet_en_20210824.pdf?did=18961&prodName=RN4907 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
59+0.3 EUR
120+0.15 EUR
500+0.12 EUR
1000+0.085 EUR
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RN4910,LF RN4910,LF Toshiba Semiconductor and Storage RN4910.pdf Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN1905,LF RN1905,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5950 Stücke:
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RN1906,LF RN1906,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5840 Stücke:
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RN2911,LF RN2911,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2910 Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 5991 Stücke:
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RN4901,LF RN4901,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4901 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN4902,LF RN4902,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4902 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
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HN1A01FE-Y,LF HN1A01FE-Y,LF Toshiba Semiconductor and Storage HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE Description: TRANS 2PNP 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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HN1A01FU-Y,LF HN1A01FU-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19142&prodName=HN1A01FU Description: TRANS 2PNP DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.068 EUR
Mindestbestellmenge: 3000 Stücke
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RN1905,LF RN1905,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 3000 Stücke
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RN1906,LF RN1906,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1905 Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
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RN1907,LF RN1907,LF Toshiba Semiconductor and Storage Description: TRANS 2NPN PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2902,LF RN2902,LF Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
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RN2903,LF RN2903,LF Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2903 Description: TRANS PREBIAS 2PNP 50V 100MA US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2904,LF RN2904,LF Toshiba Semiconductor and Storage Description: TRANS 2PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN2906,LF RN2906,LF Toshiba Semiconductor and Storage RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906 Description: TRANS 2PNP PREBIAS 0.2W US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.075 EUR
Mindestbestellmenge: 3000 Stücke
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RN2911,LF RN2911,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN2910 Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 3000 Stücke
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RN4901,LF RN4901,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4901 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN4902,LF RN4902,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN4902 Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
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 Mindestbestellmenge: 3000 Stücke
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RN4904,LF RN4904,LF Toshiba Semiconductor and Storage docget.jsp?did=18954&prodName=RN4904 Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.072 EUR
Mindestbestellmenge: 3000 Stücke
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RN4906,LF RN4906,LF Toshiba Semiconductor and Storage RN4906_datasheet_en_20210824.pdf?did=18959&prodName=RN4906 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN4907,LF RN4907,LF Toshiba Semiconductor and Storage RN4907_datasheet_en_20210824.pdf?did=18961&prodName=RN4907 Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.074 EUR
6000+0.069 EUR
Mindestbestellmenge: 3000 Stücke
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RN4910,LF RN4910,LF Toshiba Semiconductor and Storage RN4910.pdf Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TC7SET126FU,LJ TC7SET126FU,LJ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SET126F Description: IC BUFF/DVR SNGL N-INV USV
auf Bestellung 5880 Stücke:
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TC7SH00FU,LJ TC7SH00FU,LJ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH00FU Description: IC GATE NAND 1CH 2-INP USV
auf Bestellung 2928 Stücke:
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TC7SH02FU,LJ TC7SH02FU,LJ Toshiba Semiconductor and Storage docget.jsp?did=30512&prodName=TC7SH02FU Description: IC GATE NOR 1CH 2-INP USV
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TC7SH04FU,LJ TC7SH04FU,LJ Toshiba Semiconductor and Storage TC7SH04FU_datasheet_en_20170516.pdf?did=30515&prodName=TC7SH04FU Description: IC INVERTER 1CH 1-INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TC7SH08FU,LJ TC7SH08FU,LJ Toshiba Semiconductor and Storage docget.jsp?did=29870&prodName=TC7SH08FU Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7SH14FU,LJ TC7SH14FU,LJ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SH14FU Description: IC INVERTER SCHMT TRG SNGL USV
Produkt ist nicht verfügbar
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TC7SZ04FU,LJ TC7SZ04FU,LJ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SZ04F Description: IC INVERTER SINGLE USV
Produkt ist nicht verfügbar
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TC7SZ08F,LJ TC7SZ08F,LJ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SZ08F Description: IC GATE AND 1CH 2-INP SMV
auf Bestellung 5890 Stücke:
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TC7SET126FU,LJ TC7SET126FU,LJ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7SET126F Description: IC BUFF/DVR SNGL N-INV USV
auf Bestellung 5880 Stücke:
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SSM6H19NU,LF docget.jsp?did=14715&prodName=SSM6H19NU
SSM6H19NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+0.76 EUR
38+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 24 Stücke
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SSM6H19NU,LF docget.jsp?did=14715&prodName=SSM6H19NU
SSM6H19NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 2A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.2 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 1A, 8V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
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2SC4116-Y,LF docget.jsp?did=19292&prodName=2SC4116
2SC4116-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
auf Bestellung 7314 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
122+0.14 EUR
197+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
Mindestbestellmenge: 72 Stücke
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2SC6026MFVGR,L3F docget.jsp?did=6106&prodName=2SC6026MFV
2SC6026MFVGR,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
auf Bestellung 26375 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
63+0.28 EUR
103+0.17 EUR
167+0.11 EUR
500+0.077 EUR
1000+0.068 EUR
2000+0.06 EUR
Mindestbestellmenge: 63 Stücke
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RN1302,LF docget.jsp?did=18776&prodName=RN1306
RN1302,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 11612 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+0.35 EUR
84+0.21 EUR
134+0.13 EUR
500+0.096 EUR
1000+0.085 EUR
Mindestbestellmenge: 50 Stücke
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RN1305,LF docget.jsp?did=18776&prodName=RN1306
RN1305,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 4941 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+0.35 EUR
84+0.21 EUR
134+0.13 EUR
500+0.096 EUR
1000+0.085 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1306,LF docget.jsp?did=18776&prodName=RN1306
RN1306,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
auf Bestellung 3522 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
113+0.16 EUR
183+0.096 EUR
500+0.07 EUR
1000+0.061 EUR
Mindestbestellmenge: 72 Stücke
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2SC6026MFVGR,L3F docget.jsp?did=6106&prodName=2SC6026MFV
2SC6026MFVGR,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8000+0.046 EUR
16000+0.042 EUR
Mindestbestellmenge: 8000 Stücke
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2SC4116-Y,LF docget.jsp?did=19292&prodName=2SC4116
2SC4116-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SC-70
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SC-70
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 125°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.045 EUR
6000+0.04 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1302,LF docget.jsp?did=18776&prodName=RN1306
RN1302,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.07 EUR
6000+0.063 EUR
9000+0.059 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1305,LF docget.jsp?did=18776&prodName=RN1306
RN1305,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1306,LF docget.jsp?did=18776&prodName=RN1306
RN1306,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.05 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2310,LF docget.jsp?did=18870&prodName=RN2311
RN2310,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
117+0.15 EUR
188+0.094 EUR
500+0.068 EUR
1000+0.06 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2310,LF docget.jsp?did=18870&prodName=RN2311
RN2310,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SC70
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HN1A01FE-Y,LF HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE
HN1A01FE-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HN1A01FU-Y,LF docget.jsp?did=19142&prodName=HN1A01FU
HN1A01FU-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
auf Bestellung 3119 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+0.35 EUR
84+0.21 EUR
135+0.13 EUR
500+0.096 EUR
1000+0.084 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN1905,LF docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1905,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1906,LF docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1906,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5840 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1907,LF
RN1907,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2902,LF docget.jsp?did=18907&prodName=RN2906
RN2902,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LF docget.jsp?did=18907&prodName=RN2903
RN2903,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2904,LF
RN2904,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2906,LF RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2906,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
auf Bestellung 5268 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
48+0.37 EUR
78+0.23 EUR
126+0.14 EUR
500+0.1 EUR
1000+0.091 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2911,LF docget.jsp?type=datasheet&lang=en&pid=RN2910
RN2911,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 5991 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN4901,LF docget.jsp?type=datasheet&lang=en&pid=RN4901
RN4901,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4902,LF docget.jsp?type=datasheet&lang=en&pid=RN4902
RN4902,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN4904,LF docget.jsp?did=18954&prodName=RN4904
RN4904,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+0.35 EUR
80+0.22 EUR
128+0.14 EUR
500+0.1 EUR
1000+0.089 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4906,LF RN4906_datasheet_en_20210824.pdf?did=18959&prodName=RN4906
RN4906,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
48+0.37 EUR
78+0.23 EUR
125+0.14 EUR
500+0.1 EUR
1000+0.091 EUR
Mindestbestellmenge: 48 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4907,LF RN4907_datasheet_en_20210824.pdf?did=18961&prodName=RN4907
RN4907,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
59+0.3 EUR
120+0.15 EUR
500+0.12 EUR
1000+0.085 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4910,LF RN4910.pdf
RN4910,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN1905,LF docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1905,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN1906,LF docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1906,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 5840 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN2911,LF docget.jsp?type=datasheet&lang=en&pid=RN2910
RN2911,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 5991 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
RN4901,LF docget.jsp?type=datasheet&lang=en&pid=RN4901
RN4901,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN4902,LF docget.jsp?type=datasheet&lang=en&pid=RN4902
RN4902,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HN1A01FE-Y,LF HN1A01FE_datasheet_en_20210818.pdf?did=22309&prodName=HN1A01FE
HN1A01FE-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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HN1A01FU-Y,LF docget.jsp?did=19142&prodName=HN1A01FU
HN1A01FU-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP DUAL 50V 150MA US6
Part Status: Active
Supplier Device Package: US6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 200mW
Operating Temperature: 125°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.068 EUR
Mindestbestellmenge: 3000 Stücke
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RN1905,LF docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1905,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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RN1906,LF docget.jsp?type=datasheet&lang=en&pid=RN1905
RN1906,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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RN1907,LF
RN1907,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN2902,LF docget.jsp?did=18907&prodName=RN2906
RN2902,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2903,LF docget.jsp?did=18907&prodName=RN2903
RN2903,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2904,LF
RN2904,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RN2906,LF RN2906_datasheet_en_20230112.pdf?did=18907&prodName=RN2906
RN2906,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.075 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN2911,LF docget.jsp?type=datasheet&lang=en&pid=RN2910
RN2911,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2PNP PREBIAS 0.2W US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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RN4901,LF docget.jsp?type=datasheet&lang=en&pid=RN4901
RN4901,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN4902,LF docget.jsp?type=datasheet&lang=en&pid=RN4902
RN4902,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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RN4904,LF docget.jsp?did=18954&prodName=RN4904
RN4904,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.072 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
RN4906,LF RN4906_datasheet_en_20210824.pdf?did=18959&prodName=RN4906
RN4906,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN4907,LF RN4907_datasheet_en_20210824.pdf?did=18961&prodName=RN4907
RN4907,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.074 EUR
6000+0.069 EUR
Mindestbestellmenge: 3000 Stücke
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RN4910,LF RN4910.pdf
RN4910,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN/PNP PREBIAS 0.2W US6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TC7SET126FU,LJ docget.jsp?type=datasheet&lang=en&pid=TC7SET126F
TC7SET126FU,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF/DVR SNGL N-INV USV
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)
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TC7SH00FU,LJ docget.jsp?type=datasheet&lang=en&pid=TC7SH00FU
TC7SH00FU,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NAND 1CH 2-INP USV
auf Bestellung 2928 Stücke:
Lieferzeit 10-14 Tag (e)
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TC7SH02FU,LJ docget.jsp?did=30512&prodName=TC7SH02FU
TC7SH02FU,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP USV
Produkt ist nicht verfügbar
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TC7SH04FU,LJ TC7SH04FU_datasheet_en_20170516.pdf?did=30515&prodName=TC7SH04FU
TC7SH04FU,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 1CH 1-INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Input Logic Level - Low: 0.5V
Input Logic Level - High: 1.5V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TC7SH08FU,LJ docget.jsp?did=29870&prodName=TC7SH08FU
TC7SH08FU,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TC7SH14FU,LJ docget.jsp?type=datasheet&lang=en&pid=TC7SH14FU
TC7SH14FU,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER SCHMT TRG SNGL USV
Produkt ist nicht verfügbar
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TC7SZ04FU,LJ docget.jsp?type=datasheet&lang=en&pid=TC7SZ04F
TC7SZ04FU,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER SINGLE USV
Produkt ist nicht verfügbar
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TC7SZ08F,LJ docget.jsp?type=datasheet&lang=en&pid=TC7SZ08F
TC7SZ08F,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP SMV
auf Bestellung 5890 Stücke:
Lieferzeit 10-14 Tag (e)
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TC7SET126FU,LJ docget.jsp?type=datasheet&lang=en&pid=TC7SET126F
TC7SET126FU,LJ
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFF/DVR SNGL N-INV USV
auf Bestellung 5880 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
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