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TL2FL-LW1,L TL2FL-LW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-LW1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 3000K 2SMD
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TL2FL-NW0,L TL2FL-NW0,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-NW0,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
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TL2FL-NW1,L TL2FL-NW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-NW1,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
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TL2FL-WH1,L TL2FL-WH1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-WH1,L&lang=en&type=datasheet Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL3GB-DW1,L TL3GB-DW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-DW1,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 6500K 2SMD
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TL3GB-LL1,L TL3GB-LL1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-LL1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 2700K 2SMD
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TL3GB-LW1,L TL3GB-LW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-LW1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 3000K 2SMD
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TL3GB-NW0,L TL3GB-NW0,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-NW0,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
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TL3GB-NW1,L TL3GB-NW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-NW1,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
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TL3GB-WH1,L TL3GB-WH1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-WH1,L&lang=en&type=datasheet Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL1F2-DW0,L TL1F2-DW0,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-DW0,L Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1F2-NW0,L TL1F2-NW0,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW0,L Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1F2-NW1,L TL1F2-NW1,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW1,L Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1F2-WH1,L TL1F2-WH1,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-WH1,L Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL1L2-DW0,L TL1L2-DW0,L Toshiba Semiconductor and Storage TL1L2-DW0,L.pdf Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1L2-LL1,L TL1L2-LL1,L Toshiba Semiconductor and Storage TL1L2-LL1,L.pdf Description: LED LETERAS WARM WHT 2700K 2SMD
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TL1L2-LW1,L TL1L2-LW1,L Toshiba Semiconductor and Storage TL1L2-LW1,L.pdf Description: LED LETERAS WARM WHT 3000K 2SMD
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TL1L2-NW0,L TL1L2-NW0,L Toshiba Semiconductor and Storage TL1L2-NW0,L.pdf Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1L2-NW1,L TL1L2-NW1,L Toshiba Semiconductor and Storage TL1L2-NW1,L.pdf Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1L2-WH1,L TL1L2-WH1,L Toshiba Semiconductor and Storage TL1L2-WH1,L.pdf Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL2FL-DW1,L TL2FL-DW1,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL2FL-DW1,L Description: LED LETERAS COOL WHT 6500K 2SMD
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TL2FL-LL1,L TL2FL-LL1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-LL1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 2700K 2SMD
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TL2FL-LW1,L TL2FL-LW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-LW1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 3000K 2SMD
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TL2FL-NW0,L TL2FL-NW0,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-NW0,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
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TL2FL-NW1,L TL2FL-NW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-NW1,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
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TL2FL-WH1,L TL2FL-WH1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL2FL-WH1,L&lang=en&type=datasheet Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL3GB-DW1,L TL3GB-DW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-DW1,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 6500K 2SMD
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TL3GB-LL1,L TL3GB-LL1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-LL1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 2700K 2SMD
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TL3GB-LW1,L TL3GB-LW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-LW1,L&lang=en&type=datasheet Description: LED LETERAS WARM WHT 3000K 2SMD
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TL3GB-NW0,L TL3GB-NW0,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-NW0,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
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TL3GB-NW1,L TL3GB-NW1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-NW1,L&lang=en&type=datasheet Description: LED LETERAS COOL WHT 5000K 2SMD
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TL3GB-WH1,L TL3GB-WH1,L Toshiba Semiconductor and Storage docget.jsp?pid=TL3GB-WH1,L&lang=en&type=datasheet Description: LED LETERAS NEU WHITE 4000K 2SMD
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TL1F2-DW0,L TL1F2-DW0,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-DW0,L Description: LED LETERAS COOL WHT 6500K 2SMD
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TL1F2-NW0,L TL1F2-NW0,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW0,L Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1F2-NW1,L TL1F2-NW1,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW1,L Description: LED LETERAS COOL WHT 5000K 2SMD
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TL1F2-WH1,L TL1F2-WH1,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL1F2-WH1,L Description: LED LETERAS NEU WHITE 4000K 2SMD
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TPN4R303NL,L1Q TPN4R303NL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14268&prodName=TPN4R303NL Description: MOSFET N-CH 30V 63A 8TSON
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH4R003NL,L1Q TPH4R003NL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14427&prodName=TPH4R003NL Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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TPN11006NL,LQ TPN11006NL,LQ Toshiba Semiconductor and Storage TPN11006NL_datasheet_en_20140227.pdf?did=14108&prodName=TPN11006NL Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.56 EUR
6000+0.51 EUR
9000+0.50 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TPN7R506NH,L1Q TPN7R506NH,L1Q Toshiba Semiconductor and Storage TPN7R506NH_datasheet_en_20191030.pdf?did=13874&prodName=TPN7R506NH Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Produkt ist nicht verfügbar
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TPH11006NL,LQ TPH11006NL,LQ Toshiba Semiconductor and Storage TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.53 EUR
Mindestbestellmenge: 3000
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TPN13008NH,L1Q TPN13008NH,L1Q Toshiba Semiconductor and Storage TPN13008NH_datasheet_en_20191030.pdf?did=13537&prodName=TPN13008NH Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TPN4R303NL,L1Q TPN4R303NL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14268&prodName=TPN4R303NL Description: MOSFET N-CH 30V 63A 8TSON
auf Bestellung 24775 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TPH4R003NL,L1Q TPH4R003NL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14427&prodName=TPH4R003NL Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 4086 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.29 EUR
12+1.50 EUR
100+1.03 EUR
500+0.84 EUR
1000+0.75 EUR
2000+0.71 EUR
Mindestbestellmenge: 8
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TPN11006NL,LQ TPN11006NL,LQ Toshiba Semiconductor and Storage TPN11006NL_datasheet_en_20140227.pdf?did=14108&prodName=TPN11006NL Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 15775 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
13+1.36 EUR
100+0.90 EUR
500+0.70 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TPN7R506NH,L1Q TPN7R506NH,L1Q Toshiba Semiconductor and Storage TPN7R506NH_datasheet_en_20191030.pdf?did=13874&prodName=TPN7R506NH Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 7370 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.75 EUR
2000+0.69 EUR
Mindestbestellmenge: 8
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TPH11006NL,LQ TPH11006NL,LQ Toshiba Semiconductor and Storage TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 29746 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
100+0.64 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 23
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TPN13008NH,L1Q TPN13008NH,L1Q Toshiba Semiconductor and Storage TPN13008NH_datasheet_en_20191030.pdf?did=13537&prodName=TPN13008NH Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
auf Bestellung 4350 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.69 EUR
13+1.38 EUR
100+0.98 EUR
500+0.83 EUR
1000+0.70 EUR
Mindestbestellmenge: 11
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TC74LCX125FTEL TC74LCX125FTEL Toshiba Semiconductor and Storage Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
Produkt ist nicht verfügbar
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TCR3DF30,LM TCR3DF30,LM Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF10 Description: IC REG LINEAR 3V 300MA SMV
auf Bestellung 612 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR3DF33,LM TCR3DF33,LM Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF10 Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
Produkt ist nicht verfügbar
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TCR3DF30,LM TCR3DF30,LM Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF10 Description: IC REG LINEAR 3V 300MA SMV
Produkt ist nicht verfügbar
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TCR3DF33,LM TCR3DF33,LM Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF10 Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
Produkt ist nicht verfügbar
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1SS403,H3F 1SS403,H3F Toshiba Semiconductor and Storage docget.jsp?did=3397&prodName=1SS403 Description: DIODE STANDARD 200V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 10967 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
70+0.25 EUR
105+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 46
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1SV325,H3F 1SV325,H3F Toshiba Semiconductor and Storage 1SV325_datasheet_en_20140301.pdf?did=2860&prodName=1SV325 Description: DIODE VARACTOR 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
auf Bestellung 10703 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
46+0.39 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 28
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DSR01S30SC,L3F DSR01S30SC,L3F Toshiba Semiconductor and Storage docget.jsp?did=359&prodName=DSR01S30SC Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
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1SV325,H3F 1SV325,H3F Toshiba Semiconductor and Storage 1SV325_datasheet_en_20140301.pdf?did=2860&prodName=1SV325 Description: DIODE VARACTOR 10V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.13 EUR
8000+0.10 EUR
Mindestbestellmenge: 4000
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DSR01S30SC,L3F DSR01S30SC,L3F Toshiba Semiconductor and Storage docget.jsp?did=359&prodName=DSR01S30SC Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
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SSM6N7002BFE,LM SSM6N7002BFE,LM Toshiba Semiconductor and Storage docget.jsp?did=2282&prodName=SSM6N7002BFE Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 10929 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.40 EUR
72+0.24 EUR
116+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
2000+0.09 EUR
Mindestbestellmenge: 44
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SSM6N7002BFE,LM SSM6N7002BFE,LM Toshiba Semiconductor and Storage docget.jsp?did=2282&prodName=SSM6N7002BFE Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.07 EUR
8000+0.06 EUR
Mindestbestellmenge: 4000
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TL2FL-LW1,L docget.jsp?pid=TL2FL-LW1,L&lang=en&type=datasheet
TL2FL-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
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TL2FL-NW0,L docget.jsp?pid=TL2FL-NW0,L&lang=en&type=datasheet
TL2FL-NW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL2FL-NW1,L docget.jsp?pid=TL2FL-NW1,L&lang=en&type=datasheet
TL2FL-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL2FL-WH1,L docget.jsp?pid=TL2FL-WH1,L&lang=en&type=datasheet
TL2FL-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
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TL3GB-DW1,L docget.jsp?pid=TL3GB-DW1,L&lang=en&type=datasheet
TL3GB-DW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
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TL3GB-LL1,L docget.jsp?pid=TL3GB-LL1,L&lang=en&type=datasheet
TL3GB-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
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TL3GB-LW1,L docget.jsp?pid=TL3GB-LW1,L&lang=en&type=datasheet
TL3GB-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
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TL3GB-NW0,L docget.jsp?pid=TL3GB-NW0,L&lang=en&type=datasheet
TL3GB-NW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL3GB-NW1,L docget.jsp?pid=TL3GB-NW1,L&lang=en&type=datasheet
TL3GB-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL3GB-WH1,L docget.jsp?pid=TL3GB-WH1,L&lang=en&type=datasheet
TL3GB-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
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TL1F2-DW0,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-DW0,L
TL1F2-DW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
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TL1F2-NW0,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW0,L
TL1F2-NW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL1F2-NW1,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW1,L
TL1F2-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL1F2-WH1,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-WH1,L
TL1F2-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
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TL1L2-DW0,L TL1L2-DW0,L.pdf
TL1L2-DW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
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TL1L2-LL1,L TL1L2-LL1,L.pdf
TL1L2-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
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TL1L2-LW1,L TL1L2-LW1,L.pdf
TL1L2-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
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TL1L2-NW0,L TL1L2-NW0,L.pdf
TL1L2-NW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL1L2-NW1,L TL1L2-NW1,L.pdf
TL1L2-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL1L2-WH1,L TL1L2-WH1,L.pdf
TL1L2-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
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TL2FL-DW1,L docget.jsp?type=datasheet&lang=en&pid=TL2FL-DW1,L
TL2FL-DW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
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TL2FL-LL1,L docget.jsp?pid=TL2FL-LL1,L&lang=en&type=datasheet
TL2FL-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
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TL2FL-LW1,L docget.jsp?pid=TL2FL-LW1,L&lang=en&type=datasheet
TL2FL-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
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TL2FL-NW0,L docget.jsp?pid=TL2FL-NW0,L&lang=en&type=datasheet
TL2FL-NW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL2FL-NW1,L docget.jsp?pid=TL2FL-NW1,L&lang=en&type=datasheet
TL2FL-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL2FL-WH1,L docget.jsp?pid=TL2FL-WH1,L&lang=en&type=datasheet
TL2FL-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
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TL3GB-DW1,L docget.jsp?pid=TL3GB-DW1,L&lang=en&type=datasheet
TL3GB-DW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
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TL3GB-LL1,L docget.jsp?pid=TL3GB-LL1,L&lang=en&type=datasheet
TL3GB-LL1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 2700K 2SMD
Produkt ist nicht verfügbar
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TL3GB-LW1,L docget.jsp?pid=TL3GB-LW1,L&lang=en&type=datasheet
TL3GB-LW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS WARM WHT 3000K 2SMD
Produkt ist nicht verfügbar
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TL3GB-NW0,L docget.jsp?pid=TL3GB-NW0,L&lang=en&type=datasheet
TL3GB-NW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL3GB-NW1,L docget.jsp?pid=TL3GB-NW1,L&lang=en&type=datasheet
TL3GB-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL3GB-WH1,L docget.jsp?pid=TL3GB-WH1,L&lang=en&type=datasheet
TL3GB-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
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TL1F2-DW0,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-DW0,L
TL1F2-DW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 6500K 2SMD
Produkt ist nicht verfügbar
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TL1F2-NW0,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW0,L
TL1F2-NW0,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL1F2-NW1,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-NW1,L
TL1F2-NW1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS COOL WHT 5000K 2SMD
Produkt ist nicht verfügbar
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TL1F2-WH1,L docget.jsp?type=datasheet&lang=en&pid=TL1F2-WH1,L
TL1F2-WH1,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED LETERAS NEU WHITE 4000K 2SMD
Produkt ist nicht verfügbar
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TPN4R303NL,L1Q docget.jsp?did=14268&prodName=TPN4R303NL
TPN4R303NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 63A 8TSON
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH4R003NL,L1Q docget.jsp?did=14427&prodName=TPH4R003NL
TPH4R003NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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TPN11006NL,LQ TPN11006NL_datasheet_en_20140227.pdf?did=14108&prodName=TPN11006NL
TPN11006NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.56 EUR
6000+0.51 EUR
9000+0.50 EUR
Mindestbestellmenge: 3000
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TPN7R506NH,L1Q TPN7R506NH_datasheet_en_20191030.pdf?did=13874&prodName=TPN7R506NH
TPN7R506NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Produkt ist nicht verfügbar
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TPH11006NL,LQ TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL
TPH11006NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.53 EUR
Mindestbestellmenge: 3000
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TPN13008NH,L1Q TPN13008NH_datasheet_en_20191030.pdf?did=13537&prodName=TPN13008NH
TPN13008NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
Produkt ist nicht verfügbar
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TPN4R303NL,L1Q docget.jsp?did=14268&prodName=TPN4R303NL
TPN4R303NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 63A 8TSON
auf Bestellung 24775 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH4R003NL,L1Q docget.jsp?did=14427&prodName=TPH4R003NL
TPH4R003NL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 40A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 4086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.29 EUR
12+1.50 EUR
100+1.03 EUR
500+0.84 EUR
1000+0.75 EUR
2000+0.71 EUR
Mindestbestellmenge: 8
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TPN11006NL,LQ TPN11006NL_datasheet_en_20140227.pdf?did=14108&prodName=TPN11006NL
TPN11006NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 15775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
13+1.36 EUR
100+0.90 EUR
500+0.70 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
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TPN7R506NH,L1Q TPN7R506NH_datasheet_en_20191030.pdf?did=13874&prodName=TPN7R506NH
TPN7R506NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 7370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.75 EUR
2000+0.69 EUR
Mindestbestellmenge: 8
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TPH11006NL,LQ TPH11006NL_datasheet_en_20140225.pdf?did=14165&prodName=TPH11006NL
TPH11006NL,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 17A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.6W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 30 V
auf Bestellung 29746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
100+0.64 EUR
500+0.58 EUR
1000+0.53 EUR
Mindestbestellmenge: 23
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TPN13008NH,L1Q TPN13008NH_datasheet_en_20191030.pdf?did=13537&prodName=TPN13008NH
TPN13008NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 80V 18A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9A, 10V
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 40 V
auf Bestellung 4350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
13+1.38 EUR
100+0.98 EUR
500+0.83 EUR
1000+0.70 EUR
Mindestbestellmenge: 11
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TC74LCX125FTEL
TC74LCX125FTEL
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
Produkt ist nicht verfügbar
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TCR3DF30,LM docget.jsp?did=14709&prodName=TCR3DF10
TCR3DF30,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA SMV
auf Bestellung 612 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR3DF33,LM docget.jsp?did=14709&prodName=TCR3DF10
TCR3DF33,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
Produkt ist nicht verfügbar
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TCR3DF30,LM docget.jsp?did=14709&prodName=TCR3DF10
TCR3DF30,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 300MA SMV
Produkt ist nicht verfügbar
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TCR3DF33,LM docget.jsp?did=14709&prodName=TCR3DF10
TCR3DF33,LM
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 65 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 78 µA
Produkt ist nicht verfügbar
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1SS403,H3F docget.jsp?did=3397&prodName=1SS403
1SS403,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 100MA USC
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 10967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
70+0.25 EUR
105+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 46
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1SV325,H3F 1SV325_datasheet_en_20140301.pdf?did=2860&prodName=1SV325
1SV325,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
auf Bestellung 10703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
46+0.39 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 28
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DSR01S30SC,L3F docget.jsp?did=359&prodName=DSR01S30SC
DSR01S30SC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
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1SV325,H3F 1SV325_datasheet_en_20140301.pdf?did=2860&prodName=1SV325
1SV325,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE VARACTOR 10V ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: ESC
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 4.3
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.13 EUR
8000+0.10 EUR
Mindestbestellmenge: 4000
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DSR01S30SC,L3F docget.jsp?did=359&prodName=DSR01S30SC
DSR01S30SC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 30V 100MA SC2
Produkt ist nicht verfügbar
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SSM6N7002BFE,LM docget.jsp?did=2282&prodName=SSM6N7002BFE
SSM6N7002BFE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 10929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.40 EUR
72+0.24 EUR
116+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
2000+0.09 EUR
Mindestbestellmenge: 44
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SSM6N7002BFE,LM docget.jsp?did=2282&prodName=SSM6N7002BFE
SSM6N7002BFE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.2A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Supplier Device Package: ES6
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.07 EUR
8000+0.06 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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