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TDTC114E,LM TDTC114E,LM Toshiba Semiconductor and Storage TDTC114E_datasheet_en_20201112.pdf?did=36700&prodName=TDTC114E Description: TRANS PREBIAS NPN 50V SOT23-3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCS30DLU,LF TCS30DLU,LF Toshiba Semiconductor and Storage docget.jsp?did=58705&prodName=TCS30DLU Description: MAGNETIC SWITCH OMNIPOLAR UFV
Test Condition: 25°C
Supplier Device Package: UFV
Current - Supply (Max): 1.3mA
Current - Output (Max): 5mA
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Technology: Hall Effect
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: Open Drain
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
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SSM6N44FU,LF SSM6N44FU,LF Toshiba Semiconductor and Storage docget.jsp?did=365&prodName=SSM6N44FU Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
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SSM6P15FU,LF SSM6P15FU,LF Toshiba Semiconductor and Storage docget.jsp?did=22743&prodName=SSM6P15FU Description: MOSFET 2P-CH 30V 0.1A US6
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
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TCR3DF105,LM(CT TCR3DF105,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.05V 300MA SMV
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.77V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.05V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
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TCR3DF17,LM(CT TCR3DF17,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF17 Description: 300MA LDO VOUT=1.7V DROPOUT=230M
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TCR3DF185,LM(CT TCR3DF185,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.85V 300MA SMV
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.4V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.85V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
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TCR3DF19,LM(CT TCR3DF19,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF19 Description: 300MA LDO VOUT=1.9V DROPOUT=230M
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TCR3DF27,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF27 Description: 300MA LDO VOUT=2.7V DROPOUT=230M
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TCR3DF275,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF275 Description: 300MA LDO VOUT=2.75V DROPOUT=230
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TCR3DG45,LF TCR3DG45,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 4.5V 300MA 4WCSPE
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.185V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 4.5V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 125 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
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TCR5BM10,L3F TCR5BM10,L3F Toshiba Semiconductor and Storage docget.jsp?did=63493&prodName=TCR5BM10 Description: IC REG LINEAR 1V 500MA 5-DFNB
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.135V @ 500mA
PSRR: 98dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
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MT3S111TU,LF MT3S111TU,LF Toshiba Semiconductor and Storage MT3S111TU_datasheet_en_20140926.pdf?did=22549&prodName=MT3S111TU Description: RF TRANS NPN 6V 10GHZ UFM
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM3J09FU,LF SSM3J09FU,LF Toshiba Semiconductor and Storage docget.jsp?did=19575&prodName=SSM3J09FU Description: MOSFET P-CH 30V 200MA USM
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SSM3J15F,LF SSM3J15F,LF Toshiba Semiconductor and Storage docget.jsp?did=22748&prodName=SSM3J15F Description: MOSFET P-CH 30V 100MA S-MINI
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: S-Mini
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SSM3J340R,LF SSM3J340R,LF Toshiba Semiconductor and Storage SSM3J340R_datasheet_en_20190517.pdf?did=36666&prodName=SSM3J340R Description: MOSFET P-CH 30V 4A SOT23F
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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SSM3J36TU,LF SSM3J36TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11658&prodName=SSM3J36TU Description: MOSFET P-CH 20V 330MA UFM
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
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SSM6J412TU,LF SSM6J412TU,LF Toshiba Semiconductor and Storage SSM6J412TU_datasheet_en_20140301.pdf?did=2403&prodName=SSM6J412TU Description: MOSFET P-CH 20V 4A UF6
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
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SSM3K35CT,L3F SSM3K35CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=11229&prodName=SSM3K35CT Description: MOSFET N-CH 20V 180MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
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SSM3K36TU,LF SSM3K36TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11222&prodName=SSM3K36TU Description: MOSFET N-CH 20V 500MA UFM
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
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TCR3DF17,LM(CT TCR3DF17,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF17 Description: 300MA LDO VOUT=1.7V DROPOUT=230M
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CUHS15F40,H3F CUHS15F40,H3F Toshiba Semiconductor and Storage CUHS15F40_datasheet_en_20190925.pdf?did=63603&prodName=CUHS15F40 Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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CUHS15F40,H3F CUHS15F40,H3F Toshiba Semiconductor and Storage CUHS15F40_datasheet_en_20190925.pdf?did=63603&prodName=CUHS15F40 Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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RN1702,LF RN1702,LF Toshiba Semiconductor and Storage docget.jsp?did=18817&prodName=RN1702 Description: TRANS PREBIAS 2NPN 50V 100MA USV
Supplier Device Package: USV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1705,LF RN1705,LF Toshiba Semiconductor and Storage docget.jsp?did=18817&prodName=RN1705 Description: TRANS PREBIAS 2NPN 50V 100MA USV
Supplier Device Package: USV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1908,LF(CT RN1908,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: TRANS PREBIAS 2NPN 50V 100MA US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN2901,LF(CT RN2901,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2901 Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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RN2906FE,LF(CT RN2906FE,LF(CT Toshiba Semiconductor and Storage RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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RN2907,LF(CT RN2907,LF(CT Toshiba Semiconductor and Storage RN2907_datasheet_en_20211223.pdf?did=18909&prodName=RN2907 Description: TRANS PREBIAS 2PNP 50V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
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3000+0.079 EUR
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RN2908,LF(CT RN2908,LF(CT Toshiba Semiconductor and Storage RN2908_datasheet_en_20211223.pdf?did=18909&prodName=RN2908 Description: PNPX2 BRT Q1BSR22KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
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RN2909,LF(CT RN2909,LF(CT Toshiba Semiconductor and Storage RN2909_datasheet_en_20211223.pdf?did=18909&prodName=RN2909 Description: TRANS PREBIAS 2PNP 50V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
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3000+0.087 EUR
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RN2104,LF(CT RN2104,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18841&prodName=RN2104 Description: TRANS PREBIAS PNP 50V 0.1A SSM
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3000+0.08 EUR
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RN2113,LF(CT RN2113,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18854&prodName=RN2113 Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
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3000+0.07 EUR
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HN1C01FU-Y,LF HN1C01FU-Y,LF Toshiba Semiconductor and Storage docget.jsp?did=19152&prodName=HN1C01FU Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
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3000+0.077 EUR
6000+0.069 EUR
9000+0.065 EUR
15000+0.061 EUR
21000+0.057 EUR
30000+0.055 EUR
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2SA1362-GR,LF 2SA1362-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19272&prodName=2SA1362 Description: TRANS PNP 15V 0.8A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 8mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
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3000+0.13 EUR
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2SC4117-GR,LF 2SC4117-GR,LF Toshiba Semiconductor and Storage docget.jsp?did=19294&prodName=2SC4117 Description: TRANS NPN 120V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
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3000+0.07 EUR
6000+0.063 EUR
9000+0.06 EUR
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2SC6100,LF 2SC6100,LF Toshiba Semiconductor and Storage docget.jsp?did=768&prodName=2SC6100 Description: TRANS NPN 50V 2.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: UFM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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3000+0.26 EUR
6000+0.25 EUR
9000+0.23 EUR
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2SC6135,LF 2SC6135,LF Toshiba Semiconductor and Storage docget.jsp?did=22791&prodName=2SC6135 Description: TRANS NPN 50V 1A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 6mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V
Supplier Device Package: UFM
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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3000+0.26 EUR
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TTA1713-GR,LF TTA1713-GR,LF Toshiba Semiconductor and Storage TTA1713_datasheet_en_20180528.pdf?did=61218&prodName=TTA1713 Description: TRANS PNP 45V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: S-Mini
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TTA1713-Y,LF TTA1713-Y,LF Toshiba Semiconductor and Storage TTA1713_datasheet_en_20180528.pdf?did=61218&prodName=TTA1713 Description: TRANS PNP 45V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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3000+0.1 EUR
6000+0.089 EUR
9000+0.084 EUR
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TAR5S18U(TE85L,F) TAR5S18U(TE85L,F) Toshiba Semiconductor and Storage docget.jsp?did=764&prodName=TAR5S18U Description: IC REG LINEAR 1.8V 200MA UFV
Current - Supply (Max): 850 µA
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EE125,LM(CT TCR2EE125,LM(CT Toshiba Semiconductor and Storage TCR2EE125_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE125 Description: IC REG LINEAR 1.25V 200MA ESV
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Protection Features: Over Current
Voltage Dropout (Max): 0.57V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.25V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Produkt ist nicht verfügbar
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TCR2EE14,LM(CT TCR2EE14,LM(CT Toshiba Semiconductor and Storage TCR2EE14_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE14 Description: IC REG LINEAR 1.4V 200MA ESV
Protection Features: Over Current
Voltage Dropout (Max): 0.42V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.4V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EE17,LM(CT TCR2EE17,LM(CT Toshiba Semiconductor and Storage TCR2EE17_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE17 Description: IC REG LINEAR 1.7V 200MA ESV
Voltage - Output (Min/Fixed): 1.7V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Protection Features: Over Current
Voltage Dropout (Max): 0.7V @ 300mA
PSRR: 73dB (1kHz)
Control Features: Enable
Produkt ist nicht verfügbar
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TCR2EE185,LM(CT TCR2EE185,LM(CT Toshiba Semiconductor and Storage TCR2EE185_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE185 Description: IC REG LINEAR 1.85V 200MA ESV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.85V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
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4000+0.13 EUR
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TCR2EE20,LM(CT TCR2EE20,LM(CT Toshiba Semiconductor and Storage TCR2EE20_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE20 Description: IC REG LINEAR 2V 200MA ESV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EE27,LM(CT TCR2EE27,LM(CT Toshiba Semiconductor and Storage TCR2EE27_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE27 Description: IC REG LINEAR 2.7V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE275,LM(CT TCR2EE275,LM(CT Toshiba Semiconductor and Storage TCR2EE275_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE275 Description: IC REG LINEAR 2.75V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.75V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE305,LM(CT TCR2EE305,LM(CT Toshiba Semiconductor and Storage TCR2EE305_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE305 Description: IC REG LINEAR 3.05V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE31,LM(CT TCR2EE31,LM(CT Toshiba Semiconductor and Storage TCR2EE31_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE31 Description: IC REG LINEAR 3.1V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE32,LM(CT TCR2EE32,LM(CT Toshiba Semiconductor and Storage TCR2EE32_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE32 Description: IC REG LINEAR 3.2V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
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4000+0.088 EUR
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TCR2EE335,LM(CT TCR2EE335,LM(CT Toshiba Semiconductor and Storage TCR2EE335_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE335 Description: IC REG LINEAR 3.35V 200MA ESV
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Protection Features: Over Current
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.35V
Produkt ist nicht verfügbar
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TCR2EE39,LM(CT TCR2EE39,LM(CT Toshiba Semiconductor and Storage TCR2EE39_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE39 Description: IC REG LINEAR 3.9V 200MA ESV
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Protection Features: Over Current
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.9V
Produkt ist nicht verfügbar
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TCR2EE40,LM(CT TCR2EE40,LM(CT Toshiba Semiconductor and Storage TCR2EE40_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE40 Description: IC REG LINEAR 4V 200MA ESV
Protection Features: Over Current
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 4V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EE41,LM(CT TCR2EE41,LM(CT Toshiba Semiconductor and Storage TCR2EE41_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE41 Description: IC REG LINEAR 4.1V 200MA ESV
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 4.1V
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE42,LM(CT TCR2EE42,LM(CT Toshiba Semiconductor and Storage TCR2EE42_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE42 Description: IC REG LINEAR 4.2V 200MA ESV
Control Features: Enable
Voltage - Output (Min/Fixed): 4.2V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Protection Features: Over Current
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Produkt ist nicht verfügbar
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TCR2EF115,LM(CT TCR2EF115,LM(CT Toshiba Semiconductor and Storage TCR2EF115_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF115 Description: IC REG LINEAR 1.15V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.67V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.15V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EF135,LM(CT TCR2EF135,LM(CT Toshiba Semiconductor and Storage TCR2EF135_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF135 Description: IC REG LINEAR 1.35V 200MA SMV
Protection Features: Over Current
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.35V
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Supplier Device Package: SMV
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TCR2EF14,LM(CT TCR2EF14,LM(CT Toshiba Semiconductor and Storage TCR2EF14_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF14 Description: IC REG LINEAR 1.4V 200MA SMV
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Voltage Dropout (Max): 0.42V @ 150mA
Voltage - Output (Min/Fixed): 1.4V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EF285,LM(CT TCR2EF285,LM(CT Toshiba Semiconductor and Storage TCR2EF285_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF285 Description: IC REG LINEAR 2.85V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.23V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.85V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TDTC114E,LM TDTC114E_datasheet_en_20201112.pdf?did=36700&prodName=TDTC114E
TDTC114E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCS30DLU,LF docget.jsp?did=58705&prodName=TCS30DLU
TCS30DLU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR UFV
Test Condition: 25°C
Supplier Device Package: UFV
Current - Supply (Max): 1.3mA
Current - Output (Max): 5mA
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Technology: Hall Effect
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Function: Omnipolar Switch
Mounting Type: Surface Mount
Polarization: North Pole, South Pole
Output Type: Open Drain
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
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26+0.82 EUR
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SSM6N44FU,LF docget.jsp?did=365&prodName=SSM6N44FU
SSM6N44FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
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35+0.61 EUR
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SSM6P15FU,LF docget.jsp?did=22743&prodName=SSM6P15FU
SSM6P15FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A US6
Power - Max: 200mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 30V
auf Bestellung 49726 Stücke:
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TCR3DF105,LM(CT
TCR3DF105,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 300MA SMV
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.77V @ 300mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.05V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
auf Bestellung 5860 Stücke:
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67+0.31 EUR
100+0.21 EUR
113+0.19 EUR
133+0.15 EUR
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TCR3DF17,LM(CT docget.jsp?did=14709&prodName=TCR3DF17
TCR3DF17,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.7V DROPOUT=230M
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TCR3DF185,LM(CT
TCR3DF185,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.85V 300MA SMV
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.4V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.85V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCR3DF19,LM(CT docget.jsp?did=14709&prodName=TCR3DF19
TCR3DF19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.9V DROPOUT=230M
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TCR3DF27,LM(CT docget.jsp?did=14709&prodName=TCR3DF27
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=2.7V DROPOUT=230M
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TCR3DF275,LM(CT docget.jsp?did=14709&prodName=TCR3DF275
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=2.75V DROPOUT=230
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TCR3DG45,LF
TCR3DG45,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 300MA 4WCSPE
Protection Features: Inrush Current, Over Current, Over Temperature
Voltage Dropout (Max): 0.185V @ 300mA
PSRR: 70dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 4.5V
Supplier Device Package: 4-WCSPE (0.65x0.65)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 125 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCR5BM10,L3F docget.jsp?did=63493&prodName=TCR5BM10
TCR5BM10,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5-DFNB
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.135V @ 500mA
PSRR: 98dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Supplier Device Package: 5-DFNB (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1712 Stücke:
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40+0.52 EUR
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MT3S111TU,LF MT3S111TU_datasheet_en_20140926.pdf?did=22549&prodName=MT3S111TU
MT3S111TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM
Part Status: Active
Supplier Device Package: UFM
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Frequency - Transition: 10GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max): 6V
Current - Collector (Ic) (Max): 100mA
Power - Max: 800mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SSM3J09FU,LF docget.jsp?did=19575&prodName=SSM3J09FU
SSM3J09FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA USM
auf Bestellung 5360 Stücke:
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SSM3J15F,LF docget.jsp?did=22748&prodName=SSM3J15F
SSM3J15F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA S-MINI
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: S-Mini
auf Bestellung 15073 Stücke:
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50+0.42 EUR
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SSM3J340R,LF SSM3J340R_datasheet_en_20190517.pdf?did=36666&prodName=SSM3J340R
SSM3J340R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 4A SOT23F
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -25V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 17495 Stücke:
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SSM3J36TU,LF docget.jsp?did=11658&prodName=SSM3J36TU
SSM3J36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA UFM
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
auf Bestellung 8725 Stücke:
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SSM6J412TU,LF SSM6J412TU_datasheet_en_20140301.pdf?did=2403&prodName=SSM6J412TU
SSM6J412TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 14476 Stücke:
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SSM3K35CT,L3F docget.jsp?did=11229&prodName=SSM3K35CT
SSM3K35CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 180MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
auf Bestellung 7682 Stücke:
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44+0.48 EUR
72+0.29 EUR
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SSM3K36TU,LF docget.jsp?did=11222&prodName=SSM3K36TU
SSM3K36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA UFM
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TCR3DF17,LM(CT docget.jsp?did=14709&prodName=TCR3DF17
TCR3DF17,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.7V DROPOUT=230M
auf Bestellung 6000 Stücke:
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CUHS15F40,H3F CUHS15F40_datasheet_en_20190925.pdf?did=63603&prodName=CUHS15F40
CUHS15F40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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3000+0.19 EUR
6000+0.18 EUR
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CUHS15F40,H3F CUHS15F40_datasheet_en_20190925.pdf?did=63603&prodName=CUHS15F40
CUHS15F40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
auf Bestellung 12015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
40+0.54 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
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RN1702,LF docget.jsp?did=18817&prodName=RN1702
RN1702,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Supplier Device Package: USV
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1705,LF docget.jsp?did=18817&prodName=RN1705
RN1705,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Supplier Device Package: USV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RN1908,LF(CT docget.jsp?did=18826&prodName=RN1908
RN1908,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN2901,LF(CT docget.jsp?did=18907&prodName=RN2901
RN2901,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
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RN2906FE,LF(CT RN2906FE_datasheet_en_20211223.pdf?did=19092&prodName=RN2906FE
RN2906FE,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Produkt ist nicht verfügbar
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RN2907,LF(CT RN2907_datasheet_en_20211223.pdf?did=18909&prodName=RN2907
RN2907,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.079 EUR
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RN2908,LF(CT RN2908_datasheet_en_20211223.pdf?did=18909&prodName=RN2908
RN2908,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR22KOHM Q1BER47KOH
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.074 EUR
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RN2909,LF(CT RN2909_datasheet_en_20211223.pdf?did=18909&prodName=RN2909
RN2909,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2PNP 50V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.087 EUR
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RN2104,LF(CT docget.jsp?did=18841&prodName=RN2104
RN2104,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.08 EUR
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RN2113,LF(CT docget.jsp?did=18854&prodName=RN2113
RN2113,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Supplier Device Package: SSM
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 47 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.07 EUR
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HN1C01FU-Y,LF docget.jsp?did=19152&prodName=HN1C01FU
HN1C01FU-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS 2NPN DUAL 50V 150MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 125°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: US6
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.077 EUR
6000+0.069 EUR
9000+0.065 EUR
15000+0.061 EUR
21000+0.057 EUR
30000+0.055 EUR
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2SA1362-GR,LF docget.jsp?did=19272&prodName=2SA1362
2SA1362-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 15V 0.8A S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 8mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 120MHz
Supplier Device Package: S-Mini
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
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2SC4117-GR,LF docget.jsp?did=19294&prodName=2SC4117
2SC4117-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.07 EUR
6000+0.063 EUR
9000+0.06 EUR
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2SC6100,LF docget.jsp?did=768&prodName=2SC6100
2SC6100,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 2.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Supplier Device Package: UFM
Part Status: Active
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.26 EUR
6000+0.25 EUR
9000+0.23 EUR
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2SC6135,LF docget.jsp?did=22791&prodName=2SC6135
2SC6135,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 1A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 6mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V
Supplier Device Package: UFM
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.26 EUR
6000+0.24 EUR
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TTA1713-GR,LF TTA1713_datasheet_en_20180528.pdf?did=61218&prodName=TTA1713
TTA1713-GR,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 45V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: S-Mini
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TTA1713-Y,LF TTA1713_datasheet_en_20180528.pdf?did=61218&prodName=TTA1713
TTA1713-Y,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 45V 0.5A S-MINI
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: S-Mini
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
6000+0.089 EUR
9000+0.084 EUR
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TAR5S18U(TE85L,F) docget.jsp?did=764&prodName=TAR5S18U
TAR5S18U(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA UFV
Current - Supply (Max): 850 µA
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: UFV
Number of Regulators: 1
Voltage - Input (Max): 15V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EE125,LM(CT TCR2EE125_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE125
TCR2EE125,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.25V 200MA ESV
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Protection Features: Over Current
Voltage Dropout (Max): 0.57V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.25V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Produkt ist nicht verfügbar
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TCR2EE14,LM(CT TCR2EE14_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE14
TCR2EE14,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.4V 200MA ESV
Protection Features: Over Current
Voltage Dropout (Max): 0.42V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.4V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EE17,LM(CT TCR2EE17_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE17
TCR2EE17,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.7V 200MA ESV
Voltage - Output (Min/Fixed): 1.7V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Protection Features: Over Current
Voltage Dropout (Max): 0.7V @ 300mA
PSRR: 73dB (1kHz)
Control Features: Enable
Produkt ist nicht verfügbar
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TCR2EE185,LM(CT TCR2EE185_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE185
TCR2EE185,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.85V 200MA ESV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.85V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
4000+0.13 EUR
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TCR2EE20,LM(CT TCR2EE20_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE20
TCR2EE20,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA ESV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EE27,LM(CT TCR2EE27_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE27
TCR2EE27,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.7V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.7V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE275,LM(CT TCR2EE275_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE275
TCR2EE275,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.75V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.75V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.23V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE305,LM(CT TCR2EE305_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE305
TCR2EE305,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.05V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.05V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE31,LM(CT TCR2EE31_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE31
TCR2EE31,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.1V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE32,LM(CT TCR2EE32_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE32
TCR2EE32,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.2V @ 150mA
Protection Features: Over Current
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.088 EUR
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TCR2EE335,LM(CT TCR2EE335_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE335
TCR2EE335,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.35V 200MA ESV
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Protection Features: Over Current
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 3.35V
Produkt ist nicht verfügbar
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TCR2EE39,LM(CT TCR2EE39_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE39
TCR2EE39,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.9V 200MA ESV
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Protection Features: Over Current
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 3.9V
Produkt ist nicht verfügbar
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TCR2EE40,LM(CT TCR2EE40_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE40
TCR2EE40,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4V 200MA ESV
Protection Features: Over Current
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 4V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EE41,LM(CT TCR2EE41_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE41
TCR2EE41,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.1V 200MA ESV
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 4.1V
Protection Features: Over Current
Produkt ist nicht verfügbar
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TCR2EE42,LM(CT TCR2EE42_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EE42
TCR2EE42,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.2V 200MA ESV
Control Features: Enable
Voltage - Output (Min/Fixed): 4.2V
Supplier Device Package: ESV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Protection Features: Over Current
Voltage Dropout (Max): 0.2V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Produkt ist nicht verfügbar
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TCR2EF115,LM(CT TCR2EF115_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF115
TCR2EF115,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.15V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.67V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 1.15V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EF135,LM(CT TCR2EF135_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF135
TCR2EF135,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.35V 200MA SMV
Protection Features: Over Current
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.35V
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Supplier Device Package: SMV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.082 EUR
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TCR2EF14,LM(CT TCR2EF14_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF14
TCR2EF14,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.4V 200MA SMV
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Voltage Dropout (Max): 0.42V @ 150mA
Voltage - Output (Min/Fixed): 1.4V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TCR2EF285,LM(CT TCR2EF285_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF285
TCR2EF285,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.85V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.23V @ 150mA
PSRR: 73dB (1kHz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.85V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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