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HDEPR01GEA51F HDEPR01GEA51F Toshiba Semiconductor and Storage eHDD-MG04ACAxxxN_product-overview.pdf Description: 4TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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10+392.65 EUR
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HDEPV10GEA51F HDEPV10GEA51F Toshiba Semiconductor and Storage eHDD-MG06ACA-Product-Manual.pdf Description: 10TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Memory Size: 10TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 55 Stücke:
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HDEPV11GEA51F HDEPV11GEA51F Toshiba Semiconductor and Storage eHDD-MG06ACAxxx-Product_Overview.pdf Description: 8TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 8TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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HDEPV13GEA51F HDEPV13GEA51F Toshiba Semiconductor and Storage eHDD-MG06ACAxxx-Product_Overview.pdf Description: 6TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 6TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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HDEPV20GEA51F HDEPV20GEA51F Toshiba Semiconductor and Storage eHDD-MG06ACA-Product-Manual.pdf Description: 10TB 3.5" SATA III 5V/12V
Packaging: Bulk
Memory Size: 10TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
auf Bestellung 78 Stücke:
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1+655.15 EUR
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HDEPV21GEA51F HDEPV21GEA51F Toshiba Semiconductor and Storage eHDD-MG06ACAxxx-Product_Overview.pdf Description: 8TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 8TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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HDEPV23GEA51F HDEPV23GEA51F Toshiba Semiconductor and Storage eHDD-MG06ACAxxx-Product_Overview.pdf Description: 6TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 6TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
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HDEPW11GEA51F HDEPW11GEA51F Toshiba Semiconductor and Storage eHDD-MG07ACA-Product_Overview_rev3s.pdf Description: 12TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 34 Stücke:
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1+753.84 EUR
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HDEPW10GEA51F HDEPW10GEA51F Toshiba Semiconductor and Storage eHDD-MG07ACA-Product_Overview_rev3s.pdf Description: 14TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Produkt ist nicht verfügbar
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HDEPW21GEA51F HDEPW21GEA51F Toshiba Semiconductor and Storage eHDD-MG07ACA-Product_Overview_rev3s.pdf Description: 12TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 32 Stücke:
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1+773.11 EUR
20+686.4 EUR
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HDEPW20GEA51F HDEPW20GEA51F Toshiba Semiconductor and Storage eHDD-MG07ACA-Product_Overview_rev3s.pdf Description: 14TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
auf Bestellung 25 Stücke:
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1+767.55 EUR
20+688.3 EUR
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TDTA114Y,LM TDTA114Y,LM Toshiba Semiconductor and Storage docget.jsp?did=36687&prodName=TDTA114Y Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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TDTC114E,LM TDTC114E,LM Toshiba Semiconductor and Storage TDTC114E_datasheet_en_20201112.pdf?did=36700&prodName=TDTC114E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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TCS30DLU,LF TCS30DLU,LF Toshiba Semiconductor and Storage docget.jsp?did=58705&prodName=TCS30DLU Description: MAGNETIC SWITCH OMNIPOLAR UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.3mA
Supplier Device Package: UFV
Test Condition: 25°C
Produkt ist nicht verfügbar
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SSM6P15FU,LF SSM6P15FU,LF Toshiba Semiconductor and Storage docget.jsp?did=22743&prodName=SSM6P15FU Description: MOSFET 2P-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 48000 Stücke:
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3000+0.11 EUR
6000+0.1 EUR
9000+0.09 EUR
15000+0.089 EUR
30000+0.088 EUR
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TCR3DF105,LM(CT TCR3DF105,LM(CT Toshiba Semiconductor and Storage TCR3DF105_datasheet_en_20250818.pdf?did=151641&prodName=TCR3DF105 Description: IC REG LINEAR 1.05V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.77V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DF17,LM(CT TCR3DF17,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF17 Description: 300MA LDO VOUT=1.7V DROPOUT=230M
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TCR3DF185,LM(CT TCR3DF185,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.85V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DF19,LM(CT TCR3DF19,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF19 Description: 300MA LDO VOUT=1.9V DROPOUT=230M
auf Bestellung 3000 Stücke:
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3000+0.18 EUR
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TCR3DF27,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF27 Description: 300MA LDO VOUT=2.7V DROPOUT=230M
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TCR3DF275,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF275 Description: 300MA LDO VOUT=2.75V DROPOUT=230
Produkt ist nicht verfügbar
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TCR3DG35,LF TCR3DG35,LF Toshiba Semiconductor and Storage docget.jsp?did=36247&prodName=TCR3DG35 Description: IC REG LINEAR 3.5V 300MA 4-WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.215V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DG45,LF TCR3DG45,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 4.5V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.185V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR5BM10,L3F TCR5BM10,L3F Toshiba Semiconductor and Storage docget.jsp?did=63493&prodName=TCR5BM10 Description: IC REG LINEAR 1V 500MA 5-DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.135V @ 500mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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MT3S111TU,LF MT3S111TU,LF Toshiba Semiconductor and Storage MT3S111TU_datasheet_en_20140926.pdf?did=22549&prodName=MT3S111TU Description: RF TRANS NPN 6V 10GHZ UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Supplier Device Package: UFM
Part Status: Active
Produkt ist nicht verfügbar
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SSM3J09FU,LF SSM3J09FU,LF Toshiba Semiconductor and Storage docget.jsp?did=19575&prodName=SSM3J09FU Description: MOSFET P-CH 30V 200MA USM
Produkt ist nicht verfügbar
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SSM3J15F,LF SSM3J15F,LF Toshiba Semiconductor and Storage docget.jsp?did=22748&prodName=SSM3J15F Description: MOSFET P-CH 30V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 15000 Stücke:
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3000+0.083 EUR
6000+0.074 EUR
9000+0.07 EUR
15000+0.064 EUR
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SSM3J340R,LF SSM3J340R,LF Toshiba Semiconductor and Storage SSM3J340R_datasheet_en_20190517.pdf?did=36666&prodName=SSM3J340R Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
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3000+0.15 EUR
6000+0.14 EUR
15000+0.13 EUR
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SSM3J36TU,LF SSM3J36TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11658&prodName=SSM3J36TU Description: MOSFET P-CH 20V 330MA UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
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3000+0.13 EUR
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SSM6J412TU,LF SSM6J412TU,LF Toshiba Semiconductor and Storage SSM6J412TU_datasheet_en_20140301.pdf?did=2403&prodName=SSM6J412TU Description: MOSFET P-CH 20V 4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 12000 Stücke:
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3000+0.21 EUR
6000+0.19 EUR
9000+0.18 EUR
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SSM3K35CT,L3F SSM3K35CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=11229&prodName=SSM3K35CT Description: MOSFET N-CH 20V 180MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM3K36TU,LF SSM3K36TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11222&prodName=SSM3K36TU Description: MOSFET N-CH 20V 500MA UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
auf Bestellung 24000 Stücke:
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3000+0.13 EUR
9000+0.12 EUR
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TDTA114Y,LM TDTA114Y,LM Toshiba Semiconductor and Storage docget.jsp?did=36687&prodName=TDTA114Y Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2722 Stücke:
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192+0.11 EUR
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TDTC114E,LM TDTC114E,LM Toshiba Semiconductor and Storage TDTC114E_datasheet_en_20201112.pdf?did=36700&prodName=TDTC114E Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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TCS30DLU,LF TCS30DLU,LF Toshiba Semiconductor and Storage docget.jsp?did=58705&prodName=TCS30DLU Description: MAGNETIC SWITCH OMNIPOLAR UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.3mA
Supplier Device Package: UFV
Test Condition: 25°C
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SSM6N44FU,LF SSM6N44FU,LF Toshiba Semiconductor and Storage docget.jsp?did=365&prodName=SSM6N44FU Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
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SSM6P15FU,LF SSM6P15FU,LF Toshiba Semiconductor and Storage docget.jsp?did=22743&prodName=SSM6P15FU Description: MOSFET 2P-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: US6
Part Status: Active
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TCR3DF105,LM(CT TCR3DF105,LM(CT Toshiba Semiconductor and Storage TCR3DF105_datasheet_en_20250818.pdf?did=151641&prodName=TCR3DF105 Description: IC REG LINEAR 1.05V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.77V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DF17,LM(CT TCR3DF17,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF17 Description: 300MA LDO VOUT=1.7V DROPOUT=230M
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TCR3DF185,LM(CT TCR3DF185,LM(CT Toshiba Semiconductor and Storage Description: IC REG LINEAR 1.85V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DF19,LM(CT TCR3DF19,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF19 Description: 300MA LDO VOUT=1.9V DROPOUT=230M
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TCR3DF27,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF27 Description: 300MA LDO VOUT=2.7V DROPOUT=230M
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TCR3DF275,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF275 Description: 300MA LDO VOUT=2.75V DROPOUT=230
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TCR3DG45,LF TCR3DG45,LF Toshiba Semiconductor and Storage Description: IC REG LINEAR 4.5V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.185V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR5BM10,L3F TCR5BM10,L3F Toshiba Semiconductor and Storage docget.jsp?did=63493&prodName=TCR5BM10 Description: IC REG LINEAR 1V 500MA 5-DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.135V @ 500mA
Protection Features: Over Current, Over Temperature
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MT3S111TU,LF MT3S111TU,LF Toshiba Semiconductor and Storage MT3S111TU_datasheet_en_20140926.pdf?did=22549&prodName=MT3S111TU Description: RF TRANS NPN 6V 10GHZ UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Supplier Device Package: UFM
Part Status: Active
Produkt ist nicht verfügbar
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SSM3J09FU,LF SSM3J09FU,LF Toshiba Semiconductor and Storage docget.jsp?did=19575&prodName=SSM3J09FU Description: MOSFET P-CH 30V 200MA USM
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SSM3J15F,LF SSM3J15F,LF Toshiba Semiconductor and Storage docget.jsp?did=22748&prodName=SSM3J15F Description: MOSFET P-CH 30V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 15073 Stücke:
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SSM3J340R,LF SSM3J340R,LF Toshiba Semiconductor and Storage SSM3J340R_datasheet_en_20190517.pdf?did=36666&prodName=SSM3J340R Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
auf Bestellung 17495 Stücke:
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SSM3J36TU,LF SSM3J36TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11658&prodName=SSM3J36TU Description: MOSFET P-CH 20V 330MA UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 8725 Stücke:
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SSM6J412TU,LF SSM6J412TU,LF Toshiba Semiconductor and Storage SSM6J412TU_datasheet_en_20140301.pdf?did=2403&prodName=SSM6J412TU Description: MOSFET P-CH 20V 4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 14476 Stücke:
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SSM3K35CT,L3F SSM3K35CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=11229&prodName=SSM3K35CT Description: MOSFET N-CH 20V 180MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
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SSM3K36TU,LF SSM3K36TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11222&prodName=SSM3K36TU Description: MOSFET N-CH 20V 500MA UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
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TCR3DF17,LM(CT TCR3DF17,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=14709&prodName=TCR3DF17 Description: 300MA LDO VOUT=1.7V DROPOUT=230M
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CUHS15F40,H3F CUHS15F40,H3F Toshiba Semiconductor and Storage CUHS15F40_datasheet_en_20190925.pdf?did=63603&prodName=CUHS15F40 Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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CUHS15F40,H3F CUHS15F40,H3F Toshiba Semiconductor and Storage CUHS15F40_datasheet_en_20190925.pdf?did=63603&prodName=CUHS15F40 Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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RN1702,LF RN1702,LF Toshiba Semiconductor and Storage docget.jsp?did=18817&prodName=RN1702 Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
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RN1705,LF RN1705,LF Toshiba Semiconductor and Storage docget.jsp?did=18817&prodName=RN1705 Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
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3000+0.1 EUR
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RN1908,LF(CT RN1908,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18826&prodName=RN1908 Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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RN2901,LF(CT RN2901,LF(CT Toshiba Semiconductor and Storage docget.jsp?did=18907&prodName=RN2901 Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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HDEPR01GEA51F eHDD-MG04ACAxxxN_product-overview.pdf
HDEPR01GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 4TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 4TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+442.57 EUR
10+392.65 EUR
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HDEPV10GEA51F eHDD-MG06ACA-Product-Manual.pdf
HDEPV10GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 10TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Memory Size: 10TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 55 Stücke:
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AnzahlPrivatkunde
1+597.05 EUR
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HDEPV11GEA51F eHDD-MG06ACAxxx-Product_Overview.pdf
HDEPV11GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 8TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 8TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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HDEPV13GEA51F eHDD-MG06ACAxxx-Product_Overview.pdf
HDEPV13GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 6TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 6TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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HDEPV20GEA51F eHDD-MG06ACA-Product-Manual.pdf
HDEPV20GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 10TB 3.5" SATA III 5V/12V
Packaging: Bulk
Memory Size: 10TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
auf Bestellung 78 Stücke:
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AnzahlPrivatkunde
1+655.15 EUR
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HDEPV21GEA51F eHDD-MG06ACAxxx-Product_Overview.pdf
HDEPV21GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 8TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 8TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 9 Stücke:
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AnzahlPrivatkunde
1+553.06 EUR
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HDEPV23GEA51F eHDD-MG06ACAxxx-Product_Overview.pdf
HDEPV23GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 6TB 3.5" SATAIII 5V-12V 7.2K RPM
Packaging: Bulk
Memory Size: 6TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Produkt ist nicht verfügbar
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HDEPW11GEA51F eHDD-MG07ACA-Product_Overview_rev3s.pdf
HDEPW11GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 12TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 34 Stücke:
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AnzahlPrivatkunde
1+753.84 EUR
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HDEPW10GEA51F eHDD-MG07ACA-Product_Overview_rev3s.pdf
HDEPW10GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 14TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HDEPW21GEA51F eHDD-MG07ACA-Product_Overview_rev3s.pdf
HDEPW21GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 12TB 3.5" SATAIII 5-12V 7.2K RPM
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 12TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+773.11 EUR
20+686.4 EUR
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HDEPW20GEA51F eHDD-MG07ACA-Product_Overview_rev3s.pdf
HDEPW20GEA51F
Hersteller: Toshiba Semiconductor and Storage
Description: 14TB 3.5" SATA III 5V/12V
Packaging: Bulk
Size / Dimension: 147.00mm x 101.85mm x 26.10mm
Memory Size: 14TB
Type: SATA III
Operating Temperature: 5°C ~ 55°C
Voltage - Supply: 5V, 12V
Form Factor: 3.5"
Part Status: Active
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+767.55 EUR
20+688.3 EUR
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TDTA114Y,LM docget.jsp?did=36687&prodName=TDTA114Y
TDTA114Y,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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TDTC114E,LM TDTC114E_datasheet_en_20201112.pdf?did=36700&prodName=TDTC114E
TDTC114E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TCS30DLU,LF docget.jsp?did=58705&prodName=TCS30DLU
TCS30DLU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR UFV
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.3mA
Supplier Device Package: UFV
Test Condition: 25°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM6P15FU,LF docget.jsp?did=22743&prodName=SSM6P15FU
SSM6P15FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.1 EUR
9000+0.09 EUR
15000+0.089 EUR
30000+0.088 EUR
Mindestbestellmenge: 3000 Stücke
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TCR3DF105,LM(CT TCR3DF105_datasheet_en_20250818.pdf?did=151641&prodName=TCR3DF105
TCR3DF105,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.77V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TCR3DF17,LM(CT docget.jsp?did=14709&prodName=TCR3DF17
TCR3DF17,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.7V DROPOUT=230M
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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TCR3DF185,LM(CT
TCR3DF185,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.85V 300MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TCR3DF19,LM(CT docget.jsp?did=14709&prodName=TCR3DF19
TCR3DF19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.9V DROPOUT=230M
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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TCR3DF27,LM(CT docget.jsp?did=14709&prodName=TCR3DF27
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=2.7V DROPOUT=230M
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 3000 Stücke
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TCR3DF275,LM(CT docget.jsp?did=14709&prodName=TCR3DF275
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=2.75V DROPOUT=230
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TCR3DG35,LF docget.jsp?did=36247&prodName=TCR3DG35
TCR3DG35,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.5V 300MA 4-WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 3.5V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.215V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TCR3DG45,LF
TCR3DG45,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 300MA 4WCSPE
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.185V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TCR5BM10,L3F docget.jsp?did=63493&prodName=TCR5BM10
TCR5BM10,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5-DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.135V @ 500mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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MT3S111TU,LF MT3S111TU_datasheet_en_20140926.pdf?did=22549&prodName=MT3S111TU
MT3S111TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Supplier Device Package: UFM
Part Status: Active
Produkt ist nicht verfügbar
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SSM3J09FU,LF docget.jsp?did=19575&prodName=SSM3J09FU
SSM3J09FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA USM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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SSM3J15F,LF docget.jsp?did=22748&prodName=SSM3J15F
SSM3J15F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.083 EUR
6000+0.074 EUR
9000+0.07 EUR
15000+0.064 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J340R,LF SSM3J340R_datasheet_en_20190517.pdf?did=36666&prodName=SSM3J340R
SSM3J340R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
15000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3J36TU,LF docget.jsp?did=11658&prodName=SSM3J36TU
SSM3J36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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SSM6J412TU,LF SSM6J412TU_datasheet_en_20140301.pdf?did=2403&prodName=SSM6J412TU
SSM6J412TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.21 EUR
6000+0.19 EUR
9000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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SSM3K35CT,L3F docget.jsp?did=11229&prodName=SSM3K35CT
SSM3K35CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 180MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM3K36TU,LF docget.jsp?did=11222&prodName=SSM3K36TU
SSM3K36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+0.13 EUR
9000+0.12 EUR
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TDTA114Y,LM docget.jsp?did=36687&prodName=TDTA114Y
TDTA114Y,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 2722 Stücke:
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AnzahlPrivatkunde
72+0.3 EUR
120+0.18 EUR
192+0.11 EUR
500+0.079 EUR
1000+0.069 EUR
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TDTC114E,LM TDTC114E_datasheet_en_20201112.pdf?did=36700&prodName=TDTC114E
TDTC114E,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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TCS30DLU,LF docget.jsp?did=58705&prodName=TCS30DLU
TCS30DLU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MAGNETIC SWITCH OMNIPOLAR UFV
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 3.6V
Technology: Hall Effect
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Current - Output (Max): 5mA
Current - Supply (Max): 1.3mA
Supplier Device Package: UFV
Test Condition: 25°C
auf Bestellung 909 Stücke:
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26+0.82 EUR
30+0.7 EUR
32+0.67 EUR
34+0.62 EUR
50+0.58 EUR
100+0.56 EUR
500+0.5 EUR
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SSM6N44FU,LF docget.jsp?did=365&prodName=SSM6N44FU
SSM6N44FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8.5pF @ 3V
Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 13323 Stücke:
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35+0.61 EUR
57+0.37 EUR
100+0.24 EUR
500+0.17 EUR
1000+0.15 EUR
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SSM6P15FU,LF docget.jsp?did=22743&prodName=SSM6P15FU
SSM6P15FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 30V 0.1A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 49726 Stücke:
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AnzahlPrivatkunde
36+0.58 EUR
58+0.36 EUR
100+0.23 EUR
500+0.17 EUR
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TCR3DF105,LM(CT TCR3DF105_datasheet_en_20250818.pdf?did=151641&prodName=TCR3DF105
TCR3DF105,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.05V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.05V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.77V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DF17,LM(CT docget.jsp?did=14709&prodName=TCR3DF17
TCR3DF17,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.7V DROPOUT=230M
auf Bestellung 6000 Stücke:
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TCR3DF185,LM(CT
TCR3DF185,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.85V 300MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.85V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR3DF19,LM(CT docget.jsp?did=14709&prodName=TCR3DF19
TCR3DF19,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.9V DROPOUT=230M
auf Bestellung 4923 Stücke:
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22+0.99 EUR
29+0.73 EUR
33+0.64 EUR
100+0.42 EUR
250+0.35 EUR
500+0.27 EUR
1000+0.21 EUR
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TCR3DF27,LM(CT docget.jsp?did=14709&prodName=TCR3DF27
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=2.7V DROPOUT=230M
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TCR3DF275,LM(CT docget.jsp?did=14709&prodName=TCR3DF275
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=2.75V DROPOUT=230
Produkt ist nicht verfügbar
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TCR3DG45,LF
TCR3DG45,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 4.5V 300MA 4WCSPE
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 125 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPE (0.65x0.65)
Voltage - Output (Min/Fixed): 4.5V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.185V @ 300mA
Protection Features: Inrush Current, Over Current, Over Temperature
Produkt ist nicht verfügbar
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TCR5BM10,L3F docget.jsp?did=63493&prodName=TCR5BM10
TCR5BM10,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5-DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
PSRR: 98dB (1kHz)
Voltage Dropout (Max): 0.135V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 1712 Stücke:
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40+0.52 EUR
58+0.36 EUR
66+0.32 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
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MT3S111TU,LF MT3S111TU_datasheet_en_20140926.pdf?did=22549&prodName=MT3S111TU
MT3S111TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: RF TRANS NPN 6V 10GHZ UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Supplier Device Package: UFM
Part Status: Active
Produkt ist nicht verfügbar
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SSM3J09FU,LF docget.jsp?did=19575&prodName=SSM3J09FU
SSM3J09FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 200MA USM
auf Bestellung 5360 Stücke:
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SSM3J15F,LF docget.jsp?did=22748&prodName=SSM3J15F
SSM3J15F,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA S-MINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: S-Mini
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 15073 Stücke:
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50+0.42 EUR
84+0.25 EUR
135+0.15 EUR
500+0.11 EUR
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SSM3J340R,LF SSM3J340R_datasheet_en_20190517.pdf?did=36666&prodName=SSM3J340R
SSM3J340R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 4A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
auf Bestellung 17495 Stücke:
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29+0.74 EUR
46+0.46 EUR
100+0.29 EUR
500+0.21 EUR
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SSM3J36TU,LF docget.jsp?did=11658&prodName=SSM3J36TU
SSM3J36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 330MA UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 8725 Stücke:
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AnzahlPrivatkunde
28+0.75 EUR
40+0.52 EUR
100+0.26 EUR
500+0.21 EUR
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SSM6J412TU,LF SSM6J412TU_datasheet_en_20140301.pdf?did=2403&prodName=SSM6J412TU
SSM6J412TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
auf Bestellung 14476 Stücke:
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22+0.96 EUR
36+0.6 EUR
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500+0.29 EUR
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SSM3K35CT,L3F docget.jsp?did=11229&prodName=SSM3K35CT
SSM3K35CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 180MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
auf Bestellung 7682 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
72+0.29 EUR
116+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
5000+0.09 EUR
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SSM3K36TU,LF docget.jsp?did=11222&prodName=SSM3K36TU
SSM3K36TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 500MA UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UFM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
53+0.39 EUR
74+0.29 EUR
100+0.25 EUR
500+0.18 EUR
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TCR3DF17,LM(CT docget.jsp?did=14709&prodName=TCR3DF17
TCR3DF17,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: 300MA LDO VOUT=1.7V DROPOUT=230M
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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CUHS15F40,H3F CUHS15F40_datasheet_en_20190925.pdf?did=63603&prodName=CUHS15F40
CUHS15F40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
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CUHS15F40,H3F CUHS15F40_datasheet_en_20190925.pdf?did=63603&prodName=CUHS15F40
CUHS15F40,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1.5A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
auf Bestellung 12015 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
40+0.54 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
Mindestbestellmenge: 31 Stücke
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RN1702,LF docget.jsp?did=18817&prodName=RN1702
RN1702,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: USV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN1705,LF docget.jsp?did=18817&prodName=RN1705
RN1705,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA USV
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: USV
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
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RN1908,LF(CT docget.jsp?did=18826&prodName=RN1908
RN1908,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 2NPN 50V 100MA US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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RN2901,LF(CT docget.jsp?did=18907&prodName=RN2901
RN2901,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: PNPX2 BRT Q1BSR4.7KOHM Q1BER4.7K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: US6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH