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TPH3206LDB TPH3206LDB Transphorm tph3206l-20190214.pdf Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206LDGB TPH3206LDGB Transphorm tph3206l-20190214.pdf Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206LDG-TR Transphorm tph3206ldg-20180327.pdf Description: GANFET N-CH 600V 17A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206LS TPH3206LS Transphorm TPH3206LS.pdf Description: GANFET N-CH 600V 17A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206LSB TPH3206LSB Transphorm tph3206l-20190214.pdf Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206LSGB Transphorm tph3206lsgb.pdf Description: GANFET N-CH 650V 16A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206PD TPH3206PD Transphorm 600v-cascode-gan-fet-tph3206pd Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.97 EUR
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TPH3206PS TPH3206PS Transphorm 600v-cascode-gan-fet-tph3206ps Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.81 EUR
50+9.94 EUR
100+9.18 EUR
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TPH3206PSB TPH3206PSB Transphorm 50v-cascode-gan-fet-tph3206psb-20171130-1539029.pdf MOSFET 650V, 150mO
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH3206PSB TPH3206PSB Transphorm tph3206psb-20171130.pdf Description: GANFET N-CH 650V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3207WS Transphorm tph3207w-20180717.pdf MOSFETs
Produkt ist nicht verfügbar
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TPH3207WS TPH3207WS Transphorm tph3207w-20180717.pdf Description: GANFET N-CH 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 8V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.65V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2197 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3208LD TPH3208LD Transphorm tph3208l-20180526.pdf Description: GANFET N-CH 650V 20A 4PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3208LDG TPH3208LDG Transphorm tph3208l-20180526.pdf Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.72 EUR
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TPH3208LS TPH3208LS Transphorm tph3208l-20180526.pdf Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3208LSG TPH3208LSG Transphorm tph3208l-20180526.pdf Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3208PD TPH3208PD Transphorm 650v-cascode-gan-fet-tph3208ps Description: GANFET N-CH 650V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3208PS TPH3208PS Transphorm 650v_cascode_gan_fet_tph3208ps_20210308-1539033.pdf MOSFET GAN FET 650V 20A TO220
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH3208PS TPH3208PS Transphorm 650v-cascode-gan-fet-tph3208ps Description: GANFET N-CH 650V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3212PS TPH3212PS Transphorm 650v-cascode-gan-fet-tph3212p Description: GANFET N-CH 650V 27A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 400uA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3206LDB tph3206l-20190214.pdf
TPH3206LDB
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206LDGB tph3206l-20190214.pdf
TPH3206LDGB
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206LDG-TR tph3206ldg-20180327.pdf
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206LS TPH3206LS.pdf
TPH3206LS
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206LSB tph3206l-20190214.pdf
TPH3206LSB
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206LSGB tph3206lsgb.pdf
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3206PD 600v-cascode-gan-fet-tph3206pd
TPH3206PD
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.97 EUR
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TPH3206PS 600v-cascode-gan-fet-tph3206ps
TPH3206PS
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
auf Bestellung 196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.81 EUR
50+9.94 EUR
100+9.18 EUR
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TPH3206PSB 50v-cascode-gan-fet-tph3206psb-20171130-1539029.pdf
TPH3206PSB
Hersteller: Transphorm
MOSFET 650V, 150mO
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH3206PSB tph3206psb-20171130.pdf
TPH3206PSB
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3207WS tph3207w-20180717.pdf
Hersteller: Transphorm
MOSFETs
Produkt ist nicht verfügbar
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TPH3207WS tph3207w-20180717.pdf
TPH3207WS
Hersteller: Transphorm
Description: GANFET N-CH 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 8V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 2.65V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2197 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3208LD tph3208l-20180526.pdf
TPH3208LD
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A 4PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3208LDG tph3208l-20180526.pdf
TPH3208LDG
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.72 EUR
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TPH3208LS tph3208l-20180526.pdf
TPH3208LS
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3208LSG tph3208l-20180526.pdf
TPH3208LSG
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3208PD 650v-cascode-gan-fet-tph3208ps
TPH3208PD
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3208PS 650v_cascode_gan_fet_tph3208ps_20210308-1539033.pdf
TPH3208PS
Hersteller: Transphorm
MOSFET GAN FET 650V 20A TO220
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH3208PS 650v-cascode-gan-fet-tph3208ps
TPH3208PS
Hersteller: Transphorm
Description: GANFET N-CH 650V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TPH3212PS 650v-cascode-gan-fet-tph3212p
TPH3212PS
Hersteller: Transphorm
Description: GANFET N-CH 650V 27A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 17A, 8V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 400uA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 400 V
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