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TP65H070G4LSG-TR TP65H070G4LSG-TR Transphorm 018_TP65H070G4LSG_1v1-3244312.pdf GaN FETs GAN FET 650V 29A QFN8x8
auf Bestellung 2756 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.12 EUR
10+10.86 EUR
100+8.52 EUR
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TP65H070G4LSG-TR TP65H070G4LSG-TR Transphorm datasheet-tp65h070g4lsg Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070G4PS TP65H070G4PS Transphorm datasheet-tp65h070g4ps Description: GANFET N-CH 650V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 700µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 806 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.60 EUR
50+9.20 EUR
100+8.48 EUR
500+7.60 EUR
Mindestbestellmenge: 2
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TP65H070G4PS TP65H070G4PS Transphorm 016_TP65H070G4PS_2v1-3177238.pdf GaN FETs GAN FET 650V 29A TO220
auf Bestellung 937 Stücke:
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1+13.92 EUR
50+8.18 EUR
100+7.67 EUR
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TP65H070G4QS-TR TP65H070G4QS-TR Transphorm datasheet-tp65h070g4qs Description: 650 V 29 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070G4QS-TR TP65H070G4QS-TR Transphorm datasheet-tp65h070g4qs Description: 650 V 29 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 1365 Stücke:
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2+16.53 EUR
10+11.36 EUR
100+8.44 EUR
500+7.56 EUR
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TP65H070G4QS-TR TP65H070G4QS-TR Transphorm TP65H070G4QS_1v0_1-3388047.pdf GaN FETs GaN FET 650 V 29A TOLL
Produkt ist nicht verfügbar
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TP65H070G4RS-TR TP65H070G4RS-TR Transphorm 014_TP65H070G4RS_1v3-3395631.pdf GaN FETs GaN FET 650 V 29A TOLT
auf Bestellung 1835 Stücke:
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1+14.15 EUR
10+10.14 EUR
100+7.83 EUR
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TP65H070G4RS-TR TP65H070G4RS-TR Transphorm datasheet-tp65h070g4rs Description: 650 V 29 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070G4RS-TR TP65H070G4RS-TR Transphorm datasheet-tp65h070g4rs Description: 650 V 29 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 1725 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.77 EUR
10+11.29 EUR
100+8.42 EUR
500+7.72 EUR
Mindestbestellmenge: 2
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TP65H070LDG TP65H070LDG Transphorm datasheet-tp65h070l-650v-gan-fet Description: GANFET N-CH 650V 25A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070LDG-TR TP65H070LDG-TR Transphorm datasheet-tp65h070l-650v-gan-fet Description: 650 V 25 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 662 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.22 EUR
10+17.02 EUR
100+12.96 EUR
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TP65H070LDG-TR TP65H070LDG-TR Transphorm TP65H070L_4v0-2065507.pdf GaN FETs 227-TP65H070LSG-TR
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.70 EUR
10+15.08 EUR
100+12.65 EUR
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TP65H070LDG-TR TP65H070LDG-TR Transphorm datasheet-tp65h070l-650v-gan-fet Description: 650 V 25 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070LSG TP65H070LSG Transphorm datasheet-tp65h070l-650v-gan-fet Description: GANFET N-CH 650V 25A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070LSG-TR TP65H070LSG-TR Transphorm TP65H070L_4v0-2065507.pdf GaN FETs GAN FET 650V 25A PQFN88
auf Bestellung 542 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.84 EUR
10+12.94 EUR
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TP65H070LSG-TR TP65H070LSG-TR Transphorm datasheet-tp65h070l-650v-gan-fet Description: GANFET N-CH 650V 25A PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
500+12.48 EUR
Mindestbestellmenge: 500
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TP65H070LSG-TR TP65H070LSG-TR Transphorm datasheet-tp65h070l-650v-gan-fet Description: GANFET N-CH 650V 25A PQFN88
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 11262 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.53 EUR
10+13.53 EUR
100+12.97 EUR
Mindestbestellmenge: 2
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TP65H100G4LSGB-TR TP65H100G4LSGB-TR Transphorm Description: Hi Volt FETs
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H100G4LSGB-TR TP65H100G4LSGB-TR Transphorm Description: Hi Volt FETs
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.74 EUR
10+7.93 EUR
100+5.77 EUR
500+4.85 EUR
1000+4.82 EUR
Mindestbestellmenge: 2
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TP65H100G4PS TP65H100G4PS Transphorm Description: Hi Volt FETs
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
auf Bestellung 262 Stücke:
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2+13.18 EUR
10+8.96 EUR
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TP65H150BG4JSG TP65H150BG4JSG Transphorm 011_TP65H150BG4JSG_3v3-3177260.pdf GaN FETs GAN FET 650V 13A QFN5x6
auf Bestellung 3996 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.95 EUR
10+4.84 EUR
100+3.57 EUR
500+3.15 EUR
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TP65H150BG4JSG-TR TP65H150BG4JSG-TR Transphorm datasheet-tp65h150bg4jsg Description: GANFET N-CH 650V 13A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H150BG4JSG-TR TP65H150BG4JSG-TR Transphorm datasheet-tp65h150bg4jsg Description: GANFET N-CH 650V 13A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
auf Bestellung 2599 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.48 EUR
10+5.50 EUR
100+3.92 EUR
500+3.27 EUR
1000+3.12 EUR
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TP65H150G4LSG TP65H150G4LSG Transphorm datasheet-tp65h150g4lsg-650v-gan-fet Description: GAN FET N-CH 650V PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 2674 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.48 EUR
10+7.61 EUR
100+6.24 EUR
500+5.31 EUR
1000+4.48 EUR
Mindestbestellmenge: 3
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TP65H150G4LSG TP65H150G4LSG Transphorm 010_TP65H150G4LSG_3v5-2900669.pdf GaN FETs GAN FET 650V 13A TO220
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.06 EUR
10+6.99 EUR
25+6.78 EUR
100+5.70 EUR
250+5.53 EUR
500+4.96 EUR
1000+4.22 EUR
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TP65H150G4LSG TP65H150G4LSG Transphorm datasheet-tp65h150g4lsg-650v-gan-fet Description: GAN FET N-CH 650V PQFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
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TP65H150G4LSG-TR TP65H150G4LSG-TR Transphorm TP65H150G4LSG_3v1-2900669.pdf MOSFET
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TP65H150G4LSG-TR TP65H150G4LSG-TR Transphorm datasheet-tp65h150g4lsg-650v-gan-fet Description: 650 V 13 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
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TP65H150G4LSG-TR TP65H150G4LSG-TR Transphorm datasheet-tp65h150g4lsg-650v-gan-fet Description: 650 V 13 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
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TP65H150G4PS TP65H150G4PS Transphorm datasheet-tp65h150g4ps-650v-gan-fet Description: GAN FET N-CH 650V TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
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TP65H150G4PS TP65H150G4PS Transphorm REN_TP65H150G4PS_DST_20230822-2900652.pdf GaN FETs GAN FET 650V 13A TO220
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TP65H150LSG Transphorm TP65H150LSG_v1.pdf Description: GANFET N-CH 650V 15A 3PQFN
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TP65H300G4JSGB TP65H300G4JSGB Transphorm TP65H300G4JSGB_1V0-3244319.pdf MOSFETs Gan FET 650 V 6.5 A PQFN56
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TP65H300G4JSGB-TR TP65H300G4JSGB-TR Transphorm 007_TP65H300G4JSGB_1V0-3244319.pdf GaN FETs GAN FET 650V 9.2A QFN5x6
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TP65H300G4JSGB-TR TP65H300G4JSGB-TR Transphorm datasheet-tp65h300g4jsgb Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
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TP65H300G4JSGB-TR TP65H300G4JSGB-TR Transphorm datasheet-tp65h300g4jsgb Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
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TP65H300G4LSG TP65H300G4LSG Transphorm TP65H300G4LSG_v1.2-2.pdf Description: GANFET N-CH 650V 6.5A 3PQFN
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TP65H300G4LSGB TP65H300G4LSGB Transphorm TP65H300G4LSGB_0v1-3388028.pdf MOSFETs Gan FET 650 V 6.5 A PQFN88
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TP65H300G4LSGB-TR TP65H300G4LSGB-TR Transphorm TP65H300G4LSGB_0v1-3359785.pdf GaN FETs GAN FET 650V 6.5A QFN8x8
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TP65H300G4LSGB-TR TP65H300G4LSGB-TR Transphorm datasheet-tp65h300g4lsgb Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
auf Bestellung 2838 Stücke:
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TP65H300G4LSGB-TR TP65H300G4LSGB-TR Transphorm datasheet-tp65h300g4lsgb Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
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TP65H300G4LSG-TR TP65H300G4LSG-TR Transphorm TP65H300G4LSG_v1.2-2.pdf Description: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
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TP65H300G4LSG-TR TP65H300G4LSG-TR Transphorm REN_TP65H300G4LSG_DST_20240813-1838764.pdf GaN FETs 650V, 240mOhm
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TP65H300G4LSG-TR TP65H300G4LSG-TR Transphorm TP65H300G4LSG_v1.2-2.pdf Description: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
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3000+2.79 EUR
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TP65H480G4JSG TP65H480G4JSG Transphorm 004_TP65H480G4JSG_3v3-1920428.pdf GaN FETs GAN FET 650V 3.6 A PQFN56
auf Bestellung 984 Stücke:
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TP65H480G4JSGB-TR TP65H480G4JSGB-TR Transphorm datasheet-tp65h480g4jsgb-650v-gan-fet Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
auf Bestellung 3886 Stücke:
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TP65H480G4JSGB-TR TP65H480G4JSGB-TR Transphorm datasheet-tp65h480g4jsgb-650v-gan-fet Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
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TP65H480G4JSGB-TR TP65H480G4JSGB-TR Transphorm 003_TP65H480G4JSGB_1v3-3244301.pdf GaN FETs GAN FET 650V 3.6A QFN5x6
auf Bestellung 3828 Stücke:
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TP65H480G4JSG-TR TP65H480G4JSG-TR Transphorm datasheet-tp65h480g4jsg Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H480G4JSG-TR TP65H480G4JSG-TR Transphorm datasheet-tp65h480g4jsg Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 1255 Stücke:
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TP65H480G4JSG-TR TP65H480G4JSG-TR Transphorm REN_TP65H480G4JSG_DST_20230912-1920428.pdf GaN FETs 650V, 480mOhm
auf Bestellung 3138 Stücke:
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TP70H150G4LSGB-TR TP70H150G4LSGB-TR Transphorm REN_TP65H150G4LSGB_DST_20230323-3536727.pdf GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
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TP70H150G4LSG-TR TP70H150G4LSG-TR Transphorm REN_TP65H150G4LSG_DST_20240813-3536733.pdf GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
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TP90H050WS TP90H050WS Transphorm tp90h050ws-1.pdf Description: GANFET N-CH 900V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 700µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 600 V
Produkt ist nicht verfügbar
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TP90H050WS TP90H050WS Transphorm TP90H050WS_2v0-1837943.pdf MOSFET 900V, 50mOhm
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1+28.30 EUR
10+24.92 EUR
30+24.55 EUR
60+23.80 EUR
120+21.54 EUR
270+21.17 EUR
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TP90H180PS TP90H180PS Transphorm datasheet-tp90h180ps-900v-gan-fet Description: GANFET N-CH 900V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 600 V
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TPD3215M TPD3215M Transphorm datasheet-tpd3215m-600v-cascode-gan-module Description: GANFET 2N-CH 600V 70A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Power - Max: 470W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
Supplier Device Package: Module
Part Status: Obsolete
Produkt ist nicht verfügbar
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TPH3202LD TPH3202LD Transphorm 600v-cascode-gan-fet-tph3202l Description: GANFET N-CH 600V 9A 4PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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TPH3202LS Transphorm 600v-cascode-gan-fet-tph3202l Transphorm
Produkt ist nicht verfügbar
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TP65H070G4LSG-TR 018_TP65H070G4LSG_1v1-3244312.pdf
TP65H070G4LSG-TR
Hersteller: Transphorm
GaN FETs GAN FET 650V 29A QFN8x8
auf Bestellung 2756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.12 EUR
10+10.86 EUR
100+8.52 EUR
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TP65H070G4LSG-TR datasheet-tp65h070g4lsg
TP65H070G4LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070G4PS datasheet-tp65h070g4ps
TP65H070G4PS
Hersteller: Transphorm
Description: GANFET N-CH 650V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 700µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.60 EUR
50+9.20 EUR
100+8.48 EUR
500+7.60 EUR
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TP65H070G4PS 016_TP65H070G4PS_2v1-3177238.pdf
TP65H070G4PS
Hersteller: Transphorm
GaN FETs GAN FET 650V 29A TO220
auf Bestellung 937 Stücke:
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Anzahl Preis
1+13.92 EUR
50+8.18 EUR
100+7.67 EUR
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TP65H070G4QS-TR datasheet-tp65h070g4qs
TP65H070G4QS-TR
Hersteller: Transphorm
Description: 650 V 29 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070G4QS-TR datasheet-tp65h070g4qs
TP65H070G4QS-TR
Hersteller: Transphorm
Description: 650 V 29 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 1365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.53 EUR
10+11.36 EUR
100+8.44 EUR
500+7.56 EUR
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TP65H070G4QS-TR TP65H070G4QS_1v0_1-3388047.pdf
TP65H070G4QS-TR
Hersteller: Transphorm
GaN FETs GaN FET 650 V 29A TOLL
Produkt ist nicht verfügbar
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TP65H070G4RS-TR 014_TP65H070G4RS_1v3-3395631.pdf
TP65H070G4RS-TR
Hersteller: Transphorm
GaN FETs GaN FET 650 V 29A TOLT
auf Bestellung 1835 Stücke:
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Anzahl Preis
1+14.15 EUR
10+10.14 EUR
100+7.83 EUR
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TP65H070G4RS-TR datasheet-tp65h070g4rs
TP65H070G4RS-TR
Hersteller: Transphorm
Description: 650 V 29 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070G4RS-TR datasheet-tp65h070g4rs
TP65H070G4RS-TR
Hersteller: Transphorm
Description: 650 V 29 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLT
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 638 pF @ 400 V
auf Bestellung 1725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.77 EUR
10+11.29 EUR
100+8.42 EUR
500+7.72 EUR
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TP65H070LDG datasheet-tp65h070l-650v-gan-fet
TP65H070LDG
Hersteller: Transphorm
Description: GANFET N-CH 650V 25A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070LDG-TR datasheet-tp65h070l-650v-gan-fet
TP65H070LDG-TR
Hersteller: Transphorm
Description: 650 V 25 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 662 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.22 EUR
10+17.02 EUR
100+12.96 EUR
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TP65H070LDG-TR TP65H070L_4v0-2065507.pdf
TP65H070LDG-TR
Hersteller: Transphorm
GaN FETs 227-TP65H070LSG-TR
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.70 EUR
10+15.08 EUR
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TP65H070LDG-TR datasheet-tp65h070l-650v-gan-fet
TP65H070LDG-TR
Hersteller: Transphorm
Description: 650 V 25 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070LSG datasheet-tp65h070l-650v-gan-fet
TP65H070LSG
Hersteller: Transphorm
Description: GANFET N-CH 650V 25A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070LSG-TR TP65H070L_4v0-2065507.pdf
TP65H070LSG-TR
Hersteller: Transphorm
GaN FETs GAN FET 650V 25A PQFN88
auf Bestellung 542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.84 EUR
10+12.94 EUR
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TP65H070LSG-TR datasheet-tp65h070l-650v-gan-fet
TP65H070LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 25A PQFN88
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+12.48 EUR
Mindestbestellmenge: 500
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TP65H070LSG-TR datasheet-tp65h070l-650v-gan-fet
TP65H070LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 25A PQFN88
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 11262 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.53 EUR
10+13.53 EUR
100+12.97 EUR
Mindestbestellmenge: 2
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TP65H100G4LSGB-TR
TP65H100G4LSGB-TR
Hersteller: Transphorm
Description: Hi Volt FETs
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H100G4LSGB-TR
TP65H100G4LSGB-TR
Hersteller: Transphorm
Description: Hi Volt FETs
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.74 EUR
10+7.93 EUR
100+5.77 EUR
500+4.85 EUR
1000+4.82 EUR
Mindestbestellmenge: 2
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TP65H100G4PS
TP65H100G4PS
Hersteller: Transphorm
Description: Hi Volt FETs
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.9A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 1.8mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 400 V
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.18 EUR
10+8.96 EUR
Mindestbestellmenge: 2
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TP65H150BG4JSG 011_TP65H150BG4JSG_3v3-3177260.pdf
TP65H150BG4JSG
Hersteller: Transphorm
GaN FETs GAN FET 650V 13A QFN5x6
auf Bestellung 3996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.95 EUR
10+4.84 EUR
100+3.57 EUR
500+3.15 EUR
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TP65H150BG4JSG-TR datasheet-tp65h150bg4jsg
TP65H150BG4JSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 13A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H150BG4JSG-TR datasheet-tp65h150bg4jsg
TP65H150BG4JSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 13A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 6V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
auf Bestellung 2599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.48 EUR
10+5.50 EUR
100+3.92 EUR
500+3.27 EUR
1000+3.12 EUR
Mindestbestellmenge: 3
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TP65H150G4LSG datasheet-tp65h150g4lsg-650v-gan-fet
TP65H150G4LSG
Hersteller: Transphorm
Description: GAN FET N-CH 650V PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 2674 Stücke:
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3+8.48 EUR
10+7.61 EUR
100+6.24 EUR
500+5.31 EUR
1000+4.48 EUR
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TP65H150G4LSG 010_TP65H150G4LSG_3v5-2900669.pdf
TP65H150G4LSG
Hersteller: Transphorm
GaN FETs GAN FET 650V 13A TO220
auf Bestellung 2062 Stücke:
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1+8.06 EUR
10+6.99 EUR
25+6.78 EUR
100+5.70 EUR
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TP65H150G4LSG datasheet-tp65h150g4lsg-650v-gan-fet
TP65H150G4LSG
Hersteller: Transphorm
Description: GAN FET N-CH 650V PQFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H150G4LSG-TR TP65H150G4LSG_3v1-2900669.pdf
TP65H150G4LSG-TR
Hersteller: Transphorm
MOSFET
Produkt ist nicht verfügbar
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TP65H150G4LSG-TR datasheet-tp65h150g4lsg-650v-gan-fet
TP65H150G4LSG-TR
Hersteller: Transphorm
Description: 650 V 13 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H150G4LSG-TR datasheet-tp65h150g4lsg-650v-gan-fet
TP65H150G4LSG-TR
Hersteller: Transphorm
Description: 650 V 13 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 2782 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.82 EUR
10+6.57 EUR
100+4.73 EUR
500+3.94 EUR
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TP65H150G4PS datasheet-tp65h150g4ps-650v-gan-fet
TP65H150G4PS
Hersteller: Transphorm
Description: GAN FET N-CH 650V TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
auf Bestellung 2765 Stücke:
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Anzahl Preis
2+11.62 EUR
50+6.72 EUR
100+6.23 EUR
500+5.80 EUR
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TP65H150G4PS REN_TP65H150G4PS_DST_20230822-2900652.pdf
TP65H150G4PS
Hersteller: Transphorm
GaN FETs GAN FET 650V 13A TO220
auf Bestellung 1152 Stücke:
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Anzahl Preis
1+12.78 EUR
10+12.02 EUR
50+7.16 EUR
100+6.58 EUR
250+6.56 EUR
500+5.97 EUR
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TP65H150LSG TP65H150LSG_v1.pdf
Hersteller: Transphorm
Description: GANFET N-CH 650V 15A 3PQFN
Produkt ist nicht verfügbar
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TP65H300G4JSGB TP65H300G4JSGB_1V0-3244319.pdf
TP65H300G4JSGB
Hersteller: Transphorm
MOSFETs Gan FET 650 V 6.5 A PQFN56
auf Bestellung 3000 Stücke:
Lieferzeit 122-126 Tag (e)
Anzahl Preis
1+5.26 EUR
10+4.40 EUR
25+4.15 EUR
100+3.57 EUR
250+3.38 EUR
500+3.15 EUR
1000+2.71 EUR
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TP65H300G4JSGB-TR 007_TP65H300G4JSGB_1V0-3244319.pdf
TP65H300G4JSGB-TR
Hersteller: Transphorm
GaN FETs GAN FET 650V 9.2A QFN5x6
auf Bestellung 6909 Stücke:
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Anzahl Preis
1+5.91 EUR
10+4.10 EUR
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TP65H300G4JSGB-TR datasheet-tp65h300g4jsgb
TP65H300G4JSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H300G4JSGB-TR datasheet-tp65h300g4jsgb
TP65H300G4JSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 9.2A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 41.6W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 400 V
auf Bestellung 3899 Stücke:
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Anzahl Preis
3+7.22 EUR
10+4.76 EUR
100+3.36 EUR
500+2.77 EUR
1000+2.57 EUR
2000+2.51 EUR
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TP65H300G4LSG TP65H300G4LSG_v1.2-2.pdf
TP65H300G4LSG
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.15 EUR
10+6.42 EUR
100+5.26 EUR
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TP65H300G4LSGB TP65H300G4LSGB_0v1-3388028.pdf
TP65H300G4LSGB
Hersteller: Transphorm
MOSFETs Gan FET 650 V 6.5 A PQFN88
auf Bestellung 3000 Stücke:
Lieferzeit 122-126 Tag (e)
Anzahl Preis
1+5.03 EUR
10+4.22 EUR
25+3.98 EUR
100+3.41 EUR
250+3.22 EUR
500+3.03 EUR
1000+2.60 EUR
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TP65H300G4LSGB-TR TP65H300G4LSGB_0v1-3359785.pdf
TP65H300G4LSGB-TR
Hersteller: Transphorm
GaN FETs GAN FET 650V 6.5A QFN8x8
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.72 EUR
10+3.96 EUR
100+2.90 EUR
500+2.45 EUR
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TP65H300G4LSGB-TR datasheet-tp65h300g4lsgb
TP65H300G4LSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
auf Bestellung 2838 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.02 EUR
10+4.62 EUR
100+3.25 EUR
500+2.67 EUR
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TP65H300G4LSGB-TR datasheet-tp65h300g4lsgb
TP65H300G4LSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 6.5A, 6V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H300G4LSG-TR TP65H300G4LSG_v1.2-2.pdf
TP65H300G4LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 6351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.88 EUR
10+5.08 EUR
100+3.61 EUR
500+2.99 EUR
1000+2.85 EUR
Mindestbestellmenge: 3
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TP65H300G4LSG-TR REN_TP65H300G4LSG_DST_20240813-1838764.pdf
TP65H300G4LSG-TR
Hersteller: Transphorm
GaN FETs 650V, 240mOhm
auf Bestellung 493 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.56 EUR
10+4.56 EUR
100+3.36 EUR
500+2.90 EUR
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TP65H300G4LSG-TR TP65H300G4LSG_v1.2-2.pdf
TP65H300G4LSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.79 EUR
Mindestbestellmenge: 3000
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TP65H480G4JSG 004_TP65H480G4JSG_3v3-1920428.pdf
TP65H480G4JSG
Hersteller: Transphorm
GaN FETs GAN FET 650V 3.6 A PQFN56
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.86 EUR
10+4.10 EUR
25+3.85 EUR
100+3.31 EUR
250+3.27 EUR
500+2.76 EUR
1000+2.50 EUR
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TP65H480G4JSGB-TR datasheet-tp65h480g4jsgb-650v-gan-fet
TP65H480G4JSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
auf Bestellung 3886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+4.07 EUR
100+2.85 EUR
500+2.33 EUR
1000+2.16 EUR
2000+2.05 EUR
Mindestbestellmenge: 3
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TP65H480G4JSGB-TR datasheet-tp65h480g4jsgb-650v-gan-fet
TP65H480G4JSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 3.6A QFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3A, 6V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H480G4JSGB-TR 003_TP65H480G4JSGB_1v3-3244301.pdf
TP65H480G4JSGB-TR
Hersteller: Transphorm
GaN FETs GAN FET 650V 3.6A QFN5x6
auf Bestellung 3828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.05 EUR
10+3.48 EUR
100+2.53 EUR
500+2.11 EUR
1000+2.08 EUR
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TP65H480G4JSG-TR datasheet-tp65h480g4jsg
TP65H480G4JSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H480G4JSG-TR datasheet-tp65h480g4jsg
TP65H480G4JSG-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 3.6A 3PQFN
Packaging: Cut Tape (CT)
Package / Case: 3-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Power Dissipation (Max): 13.2W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Supplier Device Package: 3-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
auf Bestellung 1255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.86 EUR
10+4.34 EUR
100+3.08 EUR
500+2.55 EUR
1000+2.42 EUR
Mindestbestellmenge: 3
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TP65H480G4JSG-TR REN_TP65H480G4JSG_DST_20230912-1920428.pdf
TP65H480G4JSG-TR
Hersteller: Transphorm
GaN FETs 650V, 480mOhm
auf Bestellung 3138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.68 EUR
10+3.92 EUR
100+2.85 EUR
500+2.41 EUR
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TP70H150G4LSGB-TR REN_TP65H150G4LSGB_DST_20230323-3536727.pdf
TP70H150G4LSGB-TR
Hersteller: Transphorm
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
Produkt ist nicht verfügbar
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TP70H150G4LSG-TR REN_TP65H150G4LSG_DST_20240813-3536733.pdf
TP70H150G4LSG-TR
Hersteller: Transphorm
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
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TP90H050WS tp90h050ws-1.pdf
TP90H050WS
Hersteller: Transphorm
Description: GANFET N-CH 900V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 700µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 600 V
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TP90H050WS TP90H050WS_2v0-1837943.pdf
TP90H050WS
Hersteller: Transphorm
MOSFET 900V, 50mOhm
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.30 EUR
10+24.92 EUR
30+24.55 EUR
60+23.80 EUR
120+21.54 EUR
270+21.17 EUR
510+19.52 EUR
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TP90H180PS datasheet-tp90h180ps-900v-gan-fet
TP90H180PS
Hersteller: Transphorm
Description: GANFET N-CH 900V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 600 V
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TPD3215M datasheet-tpd3215m-600v-cascode-gan-module
TPD3215M
Hersteller: Transphorm
Description: GANFET 2N-CH 600V 70A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Power - Max: 470W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
Supplier Device Package: Module
Part Status: Obsolete
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TPH3202LD 600v-cascode-gan-fet-tph3202l
TPH3202LD
Hersteller: Transphorm
Description: GANFET N-CH 600V 9A 4PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
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TPH3202LS 600v-cascode-gan-fet-tph3202l
Hersteller: Transphorm
Transphorm
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