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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TDADP-USBC-65W-KIT | Transphorm |
Description: 65 W OPEN FRAME 65 W USB-C PD PO Power - Output: 65 W Part Status: Obsolete Outputs and Type: 1, Isolated Main Purpose: AC/DC Converter Supplied Contents: Board(s) Utilized IC / Part: TDADP-USBC-65W Board Type: Fully Populated Voltage - Output: 25V Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TDAIO250P200-KIT | Transphorm |
Description: 250W PFC + LLC POWER SUPPLY KITPackaging: Bulk Voltage - Output: 12V Voltage - Input: 90 ~ 265 VAC Current - Output: 20A Frequency - Switching: 200kHz Board Type: Fully Populated Utilized IC / Part: TPH3202PS Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side and PFC Outputs and Type: 1, Isolated Part Status: Obsolete Power - Output: 250 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDHB-65H070L-DC | Transphorm |
Power Management IC Development Tools 2kW hard-switched daughter card |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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TDHBG1200DC100-KIT | Transphorm |
Power Management IC Development Tools 2kW hard-switched Half-bridge, buck or boost |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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TDHBG2500P100-KIT | Transphorm |
Power Management IC Development Tools 2.5kW hard-switched Half-bridge, buck or boost |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDHBG2500P100-KIT | Transphorm |
Description: EVAL BOARD FOR TPH3212PSPower - Output: 2.5kW Outputs and Type: 1 Non-Isolated Output Main Purpose: DC/DC Converter Utilized IC / Part: TPH3212PS Regulator Topology: Boost, Buck, Half-Bridge Contents: Board(s), Power Supply Current - Output: 16.5A Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDINV1000P100-KIT | Transphorm |
Power Management IC Development Tools 1kW inverter |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDINV1000P100-KIT | Transphorm |
Description: 1KW INVERTER EVALUATION KITPackaging: Bulk Power - Output: 1 kW Part Status: Obsolete Outputs and Type: 1, Isolated Main Purpose: DC/AC Converter Supplied Contents: Board(s), Power Supply Utilized IC / Part: TPH3206PSB Board Type: Fully Populated Regulator Topology: Inverting Frequency - Switching: 100kHz Current - Output: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDINV3000W050B-KIT | Transphorm |
Power Management IC Development Tools 3kW Totem-pole PFC |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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TDINV3000W050-KIT | Transphorm |
Power Management IC Development Tools 3kW inverter |
auf Bestellung 12 Stücke: Lieferzeit 235-239 Tag (e) |
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| TDINV3000W50B-KIT | Transphorm |
Power Management IC Development Tools 3 kW Inverter w/Microchip dsPIC |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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TDINV3500P100-KIT | Transphorm |
Description: 3.5KW INVERTER EVAL KIT |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDINV3500P100-KIT | Transphorm |
Power Management IC Development Tools 3.5kW inverter (900V) |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDPS1000E0E10-KIT | Transphorm |
Description: 1KW HB, BUCK OR BOOST EVAL KITPower - Output: 1 kW Part Status: Obsolete Outputs and Type: 1, Non-Isolated Main Purpose: DC/DC Converter Supplied Contents: Board(s), Power Supply Utilized IC / Part: TPH3206PS Board Type: Fully Populated Regulator Topology: Boost, Buck, Half-Bridge Packaging: Bulk Current - Output: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDPV1000E0C1-KIT | Transphorm |
Description: 1KW INVERTER EVAL KITPower - Output: 1 kW Part Status: Discontinued at Digi-Key Outputs and Type: 1, Isolated Main Purpose: DC/AC Converter Supplied Contents: Board(s), Power Supply Utilized IC / Part: TPH3206PS Board Type: Fully Populated Regulator Topology: Inverting Frequency - Switching: 100kHz Current - Output: 10A Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDTTP2500B066B-KIT | Transphorm |
Power Management IC Development Tools 2.5 kW Totem-pole w/Microchip dsPIC |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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TDTTP2500P100-KIT | Transphorm |
Description: EVAL BOARD FOR TPH3212PSPackaging: Bulk Voltage - Output: 390V Voltage - Input: 85 ~ 265 VAC Contents: Board(s) Frequency - Switching: 100kHz Board Type: Fully Populated Utilized IC / Part: TPH3212PS Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side and PFC Outputs and Type: 1 Non-Isolated Output Part Status: Obsolete Power - Output: 2.5kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDTTP2500P100-KIT | Transphorm |
Power Management IC Development Tools 2.5kW Totem-pole PFC |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TDTTP4000 | Transphorm | Transphorm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TDTTP4000W065AN-KIT | Transphorm |
Power Management IC Development Tools 4kW Analog Totem-pole PFC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDTTP4000W065AN-KIT | Transphorm |
Description: EVAL BOARD FOR TDTTP4000W065ANContents: Board(s) Utilized IC / Part: TDTTP4000W065AN Power - Output: 4 kW Part Status: Active Outputs and Type: 1 Non-Isolated Output Main Purpose: AC/DC, Primary Side and PFC Supplied Contents: Board(s) Board Type: Fully Populated Frequency - Switching: 65kHz Voltage - Input: 85 ~ 265 VAC Voltage - Output: 387V Packaging: Bulk |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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TDTTP4000W066B-KIT | Transphorm |
Power Management IC Development Tools 4kW Totem-pole PFC |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TDTTP4000W066C-KIT | Transphorm |
Power Management IC Development Tools 4 kW Totem-pole w/Microchip dsPIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TP65H035G4QS-TR | Transphorm |
GaN FETs GaN FET 650 V 46.5A TOLL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TP65H150BG4JSG | Transphorm |
GaN FETs GAN FET 650V 13A QFN5x6 |
auf Bestellung 3996 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H150G4LSG | Transphorm |
GaN FETs GAN FET 650V 13A TO220 |
auf Bestellung 2062 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H150G4LSG-TR | Transphorm |
MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TP65H150G4PS | Transphorm |
GaN FETs GAN FET 650V 13A TO220 |
auf Bestellung 1145 Stücke: Lieferzeit 10-14 Tag (e) |
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| TP65H150LSG | Transphorm |
Description: GANFET N-CH 650V 15A 3PQFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TP65H300G4JSGB | Transphorm |
MOSFETs Gan FET 650 V 6.5 A PQFN56 |
auf Bestellung 3000 Stücke: Lieferzeit 122-126 Tag (e) |
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TP65H300G4JSGB-TR | Transphorm |
GaN FETs GAN FET 650V 9.2A QFN5x6 |
auf Bestellung 6909 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSG | Transphorm |
Description: GANFET N-CH 650V 6.5A 3PQFN |
auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSGB | Transphorm |
MOSFETs Gan FET 650 V 6.5 A PQFN88 |
auf Bestellung 3000 Stücke: Lieferzeit 122-126 Tag (e) |
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TP65H300G4LSGB-TR | Transphorm |
GaN FETs GAN FET 650V 6.5A QFN8x8 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSG-TR | Transphorm |
Description: GANFET N-CH 650V 6.5A 3PQFNInput Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 8V Part Status: Active Supplier Device Package: 3-PQFN (8x8) Vgs(th) (Max) @ Id: 2.6V @ 500µA Power Dissipation (Max): 21W (Tc) Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerDFN Packaging: Cut Tape (CT) |
auf Bestellung 6351 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H300G4LSG-TR | Transphorm |
Description: GANFET N-CH 650V 6.5A 3PQFNInput Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 8V Part Status: Active Supplier Device Package: 3-PQFN (8x8) Vgs(th) (Max) @ Id: 2.6V @ 500µA Power Dissipation (Max): 21W (Tc) Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H480G4JSG | Transphorm |
GaN FETs GAN FET 650V 3.6 A PQFN56 |
auf Bestellung 984 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H480G4JSGB-TR | Transphorm |
GaN FETs GAN FET 650V 3.6A QFN5x6 |
auf Bestellung 3828 Stücke: Lieferzeit 10-14 Tag (e) |
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TP65H480G4JSG-TR | Transphorm |
GaN FETs 650V, 480mOhm |
auf Bestellung 3113 Stücke: Lieferzeit 10-14 Tag (e) |
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TP70H150G4LSGB-TR | Transphorm |
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TP70H150G4LSG-TR | Transphorm |
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TP90H050WS | Transphorm |
MOSFET 900V, 50mOhm |
auf Bestellung 297 Stücke: Lieferzeit 10-14 Tag (e) |
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TP90H180PS | Transphorm |
Description: GANFET N-CH 900V 15A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 500µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPD3215M | Transphorm |
Description: GANFET 2N-CH 600V 70A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Through Hole Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Power - Max: 470W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V Supplier Device Package: Module Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPH3202LD | Transphorm |
Description: GANFET N-CH 600V 9A 4PQFNPackaging: Tube Package / Case: 4-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 4-PQFN (8x8) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPH3202LS | Transphorm |
Description: GANFET N-CH 600V 9A 3PQFNPackaging: Tube Package / Case: 3-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 3-PQFN (8x8) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TPH3202LS | Transphorm |
Transphorm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TPH3202PD | Transphorm |
Description: GANFET N-CH 600V 9A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Part Status: Obsolete Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPH3202PS | Transphorm |
Description: GANFET N-CH 600V 9A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPH3205WSB | Transphorm |
Description: GANFET N-CH 650V 36A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 8V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 700µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPH3205WSBQA | Transphorm |
MOSFET GAN FET 650V 35A TO247 |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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TPH3205WSBQA | Transphorm |
Description: GANFET N-CH 650V 35A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 700µA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 540 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPH3206LD | Transphorm |
Description: GANFET N-CH 600V 17A PQFNPackaging: Tube Package / Case: 4-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 500µA Supplier Device Package: 4-PQFN (8x8) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPH3206LDB | Transphorm |
Description: GANFET N-CH 650V 16A PQFNInput Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 4-PQFN (8x8) Vgs(th) (Max) @ Id: 2.6V @ 500µA Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-PowerDFN Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TPH3206LDGB | Transphorm |
Description: GANFET N-CH 650V 16A PQFNInput Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 3-PQFN (8x8) Vgs(th) (Max) @ Id: 2.6V @ 500µA Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerDFN Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TPH3206LDG-TR | Transphorm |
Description: GANFET N-CH 600V 17A 3PQFNPackaging: Tray Package / Case: 3-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 500µA Supplier Device Package: 3-PQFN (8x8) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 8V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TPH3206LS | Transphorm |
Description: GANFET N-CH 600V 17A PQFNInput Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 3-PQFN (8x8) Vgs(th) (Max) @ Id: 2.6V @ 500µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerDFN Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
TPH3206LSB | Transphorm |
Description: GANFET N-CH 650V 16A PQFNInput Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 3-PQFN (8x8) Vgs(th) (Max) @ Id: 2.6V @ 500µA Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-PowerDFN Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TPH3206LSGB | Transphorm |
Description: GANFET N-CH 650V 16A 3PQFNPackaging: Tray Package / Case: 3-PowerDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V Power Dissipation (Max): 81W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 500µA Supplier Device Package: 3-PQFN (8x8) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 8V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
TPH3206PD | Transphorm |
Description: GANFET N-CH 600V 17A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 500µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TDADP-USBC-65W-KIT |
Hersteller: Transphorm
Description: 65 W OPEN FRAME 65 W USB-C PD PO
Power - Output: 65 W
Part Status: Obsolete
Outputs and Type: 1, Isolated
Main Purpose: AC/DC Converter
Supplied Contents: Board(s)
Utilized IC / Part: TDADP-USBC-65W
Board Type: Fully Populated
Voltage - Output: 25V
Packaging: Bulk
Description: 65 W OPEN FRAME 65 W USB-C PD PO
Power - Output: 65 W
Part Status: Obsolete
Outputs and Type: 1, Isolated
Main Purpose: AC/DC Converter
Supplied Contents: Board(s)
Utilized IC / Part: TDADP-USBC-65W
Board Type: Fully Populated
Voltage - Output: 25V
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDAIO250P200-KIT |
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Hersteller: Transphorm
Description: 250W PFC + LLC POWER SUPPLY KIT
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 20A
Frequency - Switching: 200kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3202PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 250 W
Description: 250W PFC + LLC POWER SUPPLY KIT
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 20A
Frequency - Switching: 200kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3202PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDHB-65H070L-DC |
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Hersteller: Transphorm
Power Management IC Development Tools 2kW hard-switched daughter card
Power Management IC Development Tools 2kW hard-switched daughter card
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 277.72 EUR |
| TDHBG1200DC100-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 2kW hard-switched Half-bridge, buck or boost
Power Management IC Development Tools 2kW hard-switched Half-bridge, buck or boost
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 724.25 EUR |
| TDHBG2500P100-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 2.5kW hard-switched Half-bridge, buck or boost
Power Management IC Development Tools 2.5kW hard-switched Half-bridge, buck or boost
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| TDHBG2500P100-KIT |
![]() |
Hersteller: Transphorm
Description: EVAL BOARD FOR TPH3212PS
Power - Output: 2.5kW
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC Converter
Utilized IC / Part: TPH3212PS
Regulator Topology: Boost, Buck, Half-Bridge
Contents: Board(s), Power Supply
Current - Output: 16.5A
Packaging: Bulk
Description: EVAL BOARD FOR TPH3212PS
Power - Output: 2.5kW
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC Converter
Utilized IC / Part: TPH3212PS
Regulator Topology: Boost, Buck, Half-Bridge
Contents: Board(s), Power Supply
Current - Output: 16.5A
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDINV1000P100-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 1kW inverter
Power Management IC Development Tools 1kW inverter
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| TDINV1000P100-KIT |
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Hersteller: Transphorm
Description: 1KW INVERTER EVALUATION KIT
Packaging: Bulk
Power - Output: 1 kW
Part Status: Obsolete
Outputs and Type: 1, Isolated
Main Purpose: DC/AC Converter
Supplied Contents: Board(s), Power Supply
Utilized IC / Part: TPH3206PSB
Board Type: Fully Populated
Regulator Topology: Inverting
Frequency - Switching: 100kHz
Current - Output: 10A
Description: 1KW INVERTER EVALUATION KIT
Packaging: Bulk
Power - Output: 1 kW
Part Status: Obsolete
Outputs and Type: 1, Isolated
Main Purpose: DC/AC Converter
Supplied Contents: Board(s), Power Supply
Utilized IC / Part: TPH3206PSB
Board Type: Fully Populated
Regulator Topology: Inverting
Frequency - Switching: 100kHz
Current - Output: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDINV3000W050B-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 3kW Totem-pole PFC
Power Management IC Development Tools 3kW Totem-pole PFC
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1721.85 EUR |
| TDINV3000W050-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 3kW inverter
Power Management IC Development Tools 3kW inverter
auf Bestellung 12 Stücke:
Lieferzeit 235-239 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1573.73 EUR |
| TDINV3000W50B-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 3 kW Inverter w/Microchip dsPIC
Power Management IC Development Tools 3 kW Inverter w/Microchip dsPIC
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1721.85 EUR |
| TDINV3500P100-KIT |
![]() |
Hersteller: Transphorm
Description: 3.5KW INVERTER EVAL KIT
Description: 3.5KW INVERTER EVAL KIT
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| TDINV3500P100-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 3.5kW inverter (900V)
Power Management IC Development Tools 3.5kW inverter (900V)
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| TDPS1000E0E10-KIT |
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Hersteller: Transphorm
Description: 1KW HB, BUCK OR BOOST EVAL KIT
Power - Output: 1 kW
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC Converter
Supplied Contents: Board(s), Power Supply
Utilized IC / Part: TPH3206PS
Board Type: Fully Populated
Regulator Topology: Boost, Buck, Half-Bridge
Packaging: Bulk
Current - Output: 10A
Description: 1KW HB, BUCK OR BOOST EVAL KIT
Power - Output: 1 kW
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC Converter
Supplied Contents: Board(s), Power Supply
Utilized IC / Part: TPH3206PS
Board Type: Fully Populated
Regulator Topology: Boost, Buck, Half-Bridge
Packaging: Bulk
Current - Output: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDPV1000E0C1-KIT |
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Hersteller: Transphorm
Description: 1KW INVERTER EVAL KIT
Power - Output: 1 kW
Part Status: Discontinued at Digi-Key
Outputs and Type: 1, Isolated
Main Purpose: DC/AC Converter
Supplied Contents: Board(s), Power Supply
Utilized IC / Part: TPH3206PS
Board Type: Fully Populated
Regulator Topology: Inverting
Frequency - Switching: 100kHz
Current - Output: 10A
Packaging: Bulk
Description: 1KW INVERTER EVAL KIT
Power - Output: 1 kW
Part Status: Discontinued at Digi-Key
Outputs and Type: 1, Isolated
Main Purpose: DC/AC Converter
Supplied Contents: Board(s), Power Supply
Utilized IC / Part: TPH3206PS
Board Type: Fully Populated
Regulator Topology: Inverting
Frequency - Switching: 100kHz
Current - Output: 10A
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDTTP2500B066B-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 2.5 kW Totem-pole w/Microchip dsPIC
Power Management IC Development Tools 2.5 kW Totem-pole w/Microchip dsPIC
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 2658.73 EUR |
| TDTTP2500P100-KIT |
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Hersteller: Transphorm
Description: EVAL BOARD FOR TPH3212PS
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 85 ~ 265 VAC
Contents: Board(s)
Frequency - Switching: 100kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3212PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Power - Output: 2.5kW
Description: EVAL BOARD FOR TPH3212PS
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 85 ~ 265 VAC
Contents: Board(s)
Frequency - Switching: 100kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3212PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Power - Output: 2.5kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDTTP2500P100-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 2.5kW Totem-pole PFC
Power Management IC Development Tools 2.5kW Totem-pole PFC
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| TDTTP4000 |
Hersteller: Transphorm
Transphorm
Transphorm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDTTP4000W065AN-KIT |
![]() |
Hersteller: Transphorm
Power Management IC Development Tools 4kW Analog Totem-pole PFC
Power Management IC Development Tools 4kW Analog Totem-pole PFC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TDTTP4000W065AN-KIT |
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Hersteller: Transphorm
Description: EVAL BOARD FOR TDTTP4000W065AN
Contents: Board(s)
Utilized IC / Part: TDTTP4000W065AN
Power - Output: 4 kW
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary Side and PFC
Supplied Contents: Board(s)
Board Type: Fully Populated
Frequency - Switching: 65kHz
Voltage - Input: 85 ~ 265 VAC
Voltage - Output: 387V
Packaging: Bulk
Description: EVAL BOARD FOR TDTTP4000W065AN
Contents: Board(s)
Utilized IC / Part: TDTTP4000W065AN
Power - Output: 4 kW
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Main Purpose: AC/DC, Primary Side and PFC
Supplied Contents: Board(s)
Board Type: Fully Populated
Frequency - Switching: 65kHz
Voltage - Input: 85 ~ 265 VAC
Voltage - Output: 387V
Packaging: Bulk
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 2296.45 EUR |
| TDTTP4000W066B-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 4kW Totem-pole PFC
Power Management IC Development Tools 4kW Totem-pole PFC
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| TDTTP4000W066C-KIT |
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Hersteller: Transphorm
Power Management IC Development Tools 4 kW Totem-pole w/Microchip dsPIC
Power Management IC Development Tools 4 kW Totem-pole w/Microchip dsPIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TP65H035G4QS-TR |
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Hersteller: Transphorm
GaN FETs GaN FET 650 V 46.5A TOLL
GaN FETs GaN FET 650 V 46.5A TOLL
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TP65H150BG4JSG |
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Hersteller: Transphorm
GaN FETs GAN FET 650V 13A QFN5x6
GaN FETs GAN FET 650V 13A QFN5x6
auf Bestellung 3996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.27 EUR |
| 10+ | 5.76 EUR |
| 100+ | 4.25 EUR |
| 500+ | 3.75 EUR |
| TP65H150G4LSG |
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Hersteller: Transphorm
GaN FETs GAN FET 650V 13A TO220
GaN FETs GAN FET 650V 13A TO220
auf Bestellung 2062 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.59 EUR |
| 10+ | 8.32 EUR |
| 25+ | 8.07 EUR |
| 100+ | 6.78 EUR |
| 250+ | 6.58 EUR |
| 500+ | 5.9 EUR |
| 1000+ | 5.02 EUR |
| TP65H150G4LSG-TR |
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Hersteller: Transphorm
MOSFET
MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TP65H150G4PS |
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Hersteller: Transphorm
GaN FETs GAN FET 650V 13A TO220
GaN FETs GAN FET 650V 13A TO220
auf Bestellung 1145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.21 EUR |
| 10+ | 14.3 EUR |
| 50+ | 8.52 EUR |
| 100+ | 7.83 EUR |
| 250+ | 7.81 EUR |
| 500+ | 7.1 EUR |
| TP65H150LSG |
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Hersteller: Transphorm
Description: GANFET N-CH 650V 15A 3PQFN
Description: GANFET N-CH 650V 15A 3PQFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TP65H300G4JSGB |
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Hersteller: Transphorm
MOSFETs Gan FET 650 V 6.5 A PQFN56
MOSFETs Gan FET 650 V 6.5 A PQFN56
auf Bestellung 3000 Stücke:
Lieferzeit 122-126 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.26 EUR |
| 10+ | 5.24 EUR |
| 25+ | 4.94 EUR |
| 100+ | 4.25 EUR |
| 250+ | 4.02 EUR |
| 500+ | 3.75 EUR |
| 1000+ | 3.22 EUR |
| TP65H300G4JSGB-TR |
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Hersteller: Transphorm
GaN FETs GAN FET 650V 9.2A QFN5x6
GaN FETs GAN FET 650V 9.2A QFN5x6
auf Bestellung 6909 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.03 EUR |
| 10+ | 4.88 EUR |
| 100+ | 3.56 EUR |
| 500+ | 3.06 EUR |
| TP65H300G4LSG |
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Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
Description: GANFET N-CH 650V 6.5A 3PQFN
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.51 EUR |
| 10+ | 7.64 EUR |
| 100+ | 6.26 EUR |
| TP65H300G4LSGB |
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Hersteller: Transphorm
MOSFETs Gan FET 650 V 6.5 A PQFN88
MOSFETs Gan FET 650 V 6.5 A PQFN88
auf Bestellung 3000 Stücke:
Lieferzeit 122-126 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.99 EUR |
| 10+ | 5.02 EUR |
| 25+ | 4.74 EUR |
| 100+ | 4.06 EUR |
| 250+ | 3.83 EUR |
| 500+ | 3.61 EUR |
| 1000+ | 3.09 EUR |
| TP65H300G4LSGB-TR |
![]() |
Hersteller: Transphorm
GaN FETs GAN FET 650V 6.5A QFN8x8
GaN FETs GAN FET 650V 6.5A QFN8x8
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.81 EUR |
| 10+ | 4.71 EUR |
| 100+ | 3.45 EUR |
| 500+ | 2.92 EUR |
| TP65H300G4LSG-TR |
![]() |
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 8V
Part Status: Active
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 21W (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Cut Tape (CT)
Description: GANFET N-CH 650V 6.5A 3PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 8V
Part Status: Active
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 21W (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 6351 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.38 EUR |
| 10+ | 6.05 EUR |
| 100+ | 4.3 EUR |
| 500+ | 3.56 EUR |
| 1000+ | 3.39 EUR |
| TP65H300G4LSG-TR |
![]() |
Hersteller: Transphorm
Description: GANFET N-CH 650V 6.5A 3PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 8V
Part Status: Active
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 21W (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: GANFET N-CH 650V 6.5A 3PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 8 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 8V
Part Status: Active
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 21W (Tc)
Rds On (Max) @ Id, Vgs: 312mOhm @ 5A, 8V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 3.32 EUR |
| TP65H480G4JSG |
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Hersteller: Transphorm
GaN FETs GAN FET 650V 3.6 A PQFN56
GaN FETs GAN FET 650V 3.6 A PQFN56
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.78 EUR |
| 10+ | 4.88 EUR |
| 25+ | 4.58 EUR |
| 100+ | 3.94 EUR |
| 250+ | 3.89 EUR |
| 500+ | 3.28 EUR |
| 1000+ | 2.98 EUR |
| TP65H480G4JSGB-TR |
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Hersteller: Transphorm
GaN FETs GAN FET 650V 3.6A QFN5x6
GaN FETs GAN FET 650V 3.6A QFN5x6
auf Bestellung 3828 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.01 EUR |
| 10+ | 4.14 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.51 EUR |
| 1000+ | 2.48 EUR |
| TP65H480G4JSG-TR |
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Hersteller: Transphorm
GaN FETs 650V, 480mOhm
GaN FETs 650V, 480mOhm
auf Bestellung 3113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.38 EUR |
| 10+ | 4.9 EUR |
| 25+ | 4.88 EUR |
| 100+ | 3.52 EUR |
| 500+ | 3.12 EUR |
| 1000+ | 3.09 EUR |
| 2000+ | 2.89 EUR |
| TP70H150G4LSGB-TR |
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Hersteller: Transphorm
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| TP70H150G4LSG-TR |
![]() |
Hersteller: Transphorm
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TP90H050WS |
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Hersteller: Transphorm
MOSFET 900V, 50mOhm
MOSFET 900V, 50mOhm
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.68 EUR |
| 10+ | 29.65 EUR |
| 30+ | 29.21 EUR |
| 60+ | 28.32 EUR |
| 120+ | 25.63 EUR |
| 270+ | 25.19 EUR |
| 510+ | 23.23 EUR |
| TP90H180PS |
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Hersteller: Transphorm
Description: GANFET N-CH 900V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 600 V
Description: GANFET N-CH 900V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 600 V
Produkt ist nicht verfügbar
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| TPD3215M |
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Hersteller: Transphorm
Description: GANFET 2N-CH 600V 70A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Power - Max: 470W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
Supplier Device Package: Module
Part Status: Obsolete
Description: GANFET 2N-CH 600V 70A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Power - Max: 470W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
Supplier Device Package: Module
Part Status: Obsolete
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TPH3202LD |
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Hersteller: Transphorm
Description: GANFET N-CH 600V 9A 4PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Description: GANFET N-CH 600V 9A 4PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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| TPH3202LS |
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Hersteller: Transphorm
Description: GANFET N-CH 600V 9A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Description: GANFET N-CH 600V 9A 3PQFN
Packaging: Tube
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH3202LS |
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Hersteller: Transphorm
Transphorm
Transphorm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH3202PD |
![]() |
Hersteller: Transphorm
Description: GANFET N-CH 600V 9A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: TO-220AB
Description: GANFET N-CH 600V 9A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar
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| TPH3202PS |
![]() |
Hersteller: Transphorm
Description: GANFET N-CH 600V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Description: GANFET N-CH 600V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TPH3205WSB |
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Hersteller: Transphorm
Description: GANFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 8V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Description: GANFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 8V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Produkt ist nicht verfügbar
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| TPH3205WSBQA |
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Hersteller: Transphorm
MOSFET GAN FET 650V 35A TO247
MOSFET GAN FET 650V 35A TO247
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.37 EUR |
| 10+ | 42.77 EUR |
| 30+ | 40.84 EUR |
| 120+ | 36.51 EUR |
| TPH3205WSBQA |
![]() |
Hersteller: Transphorm
Description: GANFET N-CH 650V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 700µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Qualification: AEC-Q101
Description: GANFET N-CH 650V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 22A, 8V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 700µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 540 Stücke
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| TPH3206LD |
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Hersteller: Transphorm
Description: GANFET N-CH 600V 17A PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Description: GANFET N-CH 600V 17A PQFN
Packaging: Tube
Package / Case: 4-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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| TPH3206LDB |
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Hersteller: Transphorm
Description: GANFET N-CH 650V 16A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerDFN
Packaging: Tube
Description: GANFET N-CH 650V 16A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerDFN
Packaging: Tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TPH3206LDGB |
![]() |
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Tube
Description: GANFET N-CH 650V 16A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TPH3206LDG-TR |
![]() |
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Description: GANFET N-CH 600V 17A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TPH3206LS |
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Hersteller: Transphorm
Description: GANFET N-CH 600V 17A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Tube
Description: GANFET N-CH 600V 17A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH3206LSB |
![]() |
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Tube
Description: GANFET N-CH 650V 16A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 3-PQFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-PowerDFN
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH3206LSGB |
![]() |
Hersteller: Transphorm
Description: GANFET N-CH 650V 16A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Description: GANFET N-CH 650V 16A 3PQFN
Packaging: Tray
Package / Case: 3-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: 3-PQFN (8x8)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TPH3206PD |
![]() |
Hersteller: Transphorm
Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Description: GANFET N-CH 600V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.57 EUR |
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