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TDADP-USBC-65W-KIT Transphorm Description: 65 W OPEN FRAME 65 W USB-C PD PO
Packaging: Bulk
Voltage - Output: 25V
Board Type: Fully Populated
Utilized IC / Part: TDADP-USBC-65W
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 65 W
Produkt ist nicht verfügbar
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TDAIO250P200-KIT TDAIO250P200-KIT Transphorm tdaio250p200-quick-start-guide Description: 250W PFC + LLC POWER SUPPLY KIT
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 20A
Frequency - Switching: 200kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3202PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 250 W
Produkt ist nicht verfügbar
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TDHB-65H070L-DC TDHB-65H070L-DC Transphorm datasheet-tp65h070l-650v-gan-fet Description: TP65H070L HALF-BRIDGE BOARD
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+278.20 EUR
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TDHB-65H070L-DC TDHB-65H070L-DC Transphorm ser-guide-tdhbg1200dc100-2-5kw-half-bridge-evaluat-1595592.pdf Power Management IC Development Tools 2kW hard-switched daughter card
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+233.38 EUR
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TDHBG1200DC100-KIT TDHBG1200DC100-KIT Transphorm qs009_v1-TDHBG1200DC100_0V1.pdf Description: EVAL BOARD FOR TP65H070L
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 1.2kW
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+553.27 EUR
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TDHBG1200DC100-KIT TDHBG1200DC100-KIT Transphorm ser-guide-tdhbg1200dc100-2-5kw-half-bridge-evaluat-1595592.pdf Power Management IC Development Tools 2kW hard-switched Half-bridge, buck or boost
auf Bestellung 8 Stücke:
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1+608.61 EUR
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TDHBG2500P100-KIT TDHBG2500P100-KIT Transphorm tdhbg2500p100-user-guide Description: EVAL BOARD FOR TPH3212PS
Packaging: Bulk
Current - Output: 16.5A
Contents: Board(s), Power Supply
Regulator Topology: Boost, Buck, Half-Bridge
Utilized IC / Part: TPH3212PS
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Power - Output: 2.5kW
Produkt ist nicht verfügbar
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TDHBG2500P100-KIT TDHBG2500P100-KIT Transphorm dhbg2500p100-user-guide-20171206-1539032.pdf Power Management IC Development Tools 2.5kW hard-switched Half-bridge, buck or boost
auf Bestellung 7 Stücke:
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TDINV1000P100-KIT TDINV1000P100-KIT Transphorm tdinv1000p100-user-guide Description: 1KW INVERTER EVALUATION KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PSB
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 1 kW
Produkt ist nicht verfügbar
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TDINV1000P100-KIT TDINV1000P100-KIT Transphorm tdinv1000p100_user_guide_20200915-1539036.pdf Power Management IC Development Tools 1kW inverter
auf Bestellung 6 Stücke:
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TDINV3000W050B-KIT TDINV3000W050B-KIT Transphorm TDINV3000W050_user_guide_0v5-1539037.pdf Power Management IC Development Tools 3kW Totem-pole PFC
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+1446.93 EUR
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TDINV3000W050B-KIT TDINV3000W050B-KIT Transphorm tdinv3000w050b-user-guide Description: EVAL BOARD FOR TP65H050G4WS
Packaging: Box
Voltage - Input: 400V
Contents: Board(s)
Frequency - Switching: 50kHz
Regulator Topology: Full-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4WS
Supplied Contents: Board(s)
Main Purpose: DC/AC Inverter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 3 kW
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+1367.52 EUR
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TDINV3000W050-KIT TDINV3000W050-KIT Transphorm tdinv3000w050-user-guide Description: 3.0KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 22A
Frequency - Switching: 50kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050WS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Non-Isolated
Power - Output: 3 kW
Produkt ist nicht verfügbar
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TDINV3000W050-KIT TDINV3000W050-KIT Transphorm TDINV3000W050_user_guide_0v5-1539037.pdf Power Management IC Development Tools 3kW inverter
auf Bestellung 12 Stücke:
Lieferzeit 235-239 Tag (e)
1+1322.46 EUR
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TDINV3000W50B-KIT Transphorm 005_TP65H300G4LSGB_1v1-3385999.pdf Power Management IC Development Tools 3 kW Inverter w/Microchip dsPIC
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+1446.93 EUR
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TDINV3500P100-KIT TDINV3500P100-KIT Transphorm tdinv3500p100-user-guide Description: 3.5KW INVERTER EVAL KIT
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
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TDINV3500P100-KIT TDINV3500P100-KIT Transphorm tdinv3500p100_user_guide_20200821-1539034.pdf Power Management IC Development Tools 3.5kW inverter (900V)
auf Bestellung 7 Stücke:
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TDPS1000E0E10-KIT TDPS1000E0E10-KIT Transphorm TDPS1000E0E10-KIT.pdf Description: 1KW HB, BUCK OR BOOST EVAL KIT
Packaging: Bulk
Current - Output: 10A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 1 kW
Produkt ist nicht verfügbar
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TDPV1000E0C1-KIT TDPV1000E0C1-KIT Transphorm TDPV1000E0C1-KIT_UG.pdf Description: 1KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Discontinued at Digi-Key
Power - Output: 1 kW
Produkt ist nicht verfügbar
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TDTTP2500B066B-KIT TDTTP2500B066B-KIT Transphorm TDTTP2500B066B_KIT_Firmware_Guide_0V1_1-2448772.pdf Power Management IC Development Tools 2.5 kW Totem-pole w/Microchip dsPIC
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+2234.23 EUR
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TDTTP2500B066B-KIT TDTTP2500B066B-KIT Transphorm Description: EVAL BOARD FOR TP65H050G4BS
Packaging: Bulk
Voltage - Output: 390V
Contents: Board(s)
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4BS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 2.5kW
Produkt ist nicht verfügbar
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TDTTP2500P100-KIT TDTTP2500P100-KIT Transphorm tdttp2500p100-kit-user-guide Description: EVAL BOARD FOR TPH3212PS
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 85 ~ 265 VAC
Contents: Board(s)
Frequency - Switching: 100kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3212PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Power - Output: 2.5kW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDTTP2500P100-KIT TDTTP2500P100-KIT Transphorm tdttp2500p100-kit-user-guide-20171206-1661348.pdf Power Management IC Development Tools 2.5kW Totem-pole PFC
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
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TDTTP4000 Transphorm Transphorm
Produkt ist nicht verfügbar
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TDTTP4000W065AN-KIT TDTTP4000W065AN-KIT Transphorm tdttp4000w065an_user_guide_20210601-1892221.pdf Power Management IC Development Tools 4kW Analog Totem-pole PFC
Produkt ist nicht verfügbar
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TDTTP4000W065AN-KIT TDTTP4000W065AN-KIT Transphorm tdttp4000w065an-user-guide Description: EVAL BOARD FOR TDTTP4000W065AN
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Contents: Board(s)
Frequency - Switching: 65kHz
Board Type: Fully Populated
Utilized IC / Part: TDTTP4000W065AN
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 4 kW
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+1929.79 EUR
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TDTTP4000W066B-KIT TDTTP4000W066B-KIT Transphorm dttp4000w066b-user-guide-20171023-1539028.pdf Power Management IC Development Tools 4kW Totem-pole PFC
auf Bestellung 3 Stücke:
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TDTTP4000W066B-KIT TDTTP4000W066B-KIT Transphorm tdttp4000w066b-user-guide Description: EVAL BOARD FOR TP65H035WS
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 15A
Contents: Board(s), Power Supply
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s), Power Supply
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Power - Output: 4kW
Produkt ist nicht verfügbar
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TDTTP4000W066C-KIT TDTTP4000W066C-KIT Transphorm TDTTP4000W066C-KIT_UG.pdf Description: EVAL BOARD FOR TP65H035WS
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 4kW
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+2283.95 EUR
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TDTTP4000W066C-KIT TDTTP4000W066C-KIT Transphorm tdttp4000w066c_user_guide_2_20210318-2320291.pdf Power Management IC Development Tools 4 kW Totem-pole w/Microchip dsPIC
Produkt ist nicht verfügbar
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TP65H015G5WS TP65H015G5WS Transphorm TP65H015G5WS_1v0-1.pdf Description: 650 V 95 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
auf Bestellung 593 Stücke:
Lieferzeit 10-14 Tag (e)
1+52.36 EUR
30+41.51 EUR
120+39.19 EUR
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TP65H015G5WS TP65H015G5WS Transphorm 027_TP65H015G5WS_2v0-2448878.pdf GaN FETs GAN FET 650V 95A TO2 47
auf Bestellung 711 Stücke:
Lieferzeit 10-14 Tag (e)
1+53.86 EUR
30+35.31 EUR
120+35.22 EUR
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TP65H035G4QS TP65H035G4QS Transphorm datasheet-tp65h035g4qs-650v-gan-fet-2 Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H035G4QS TP65H035G4QS Transphorm datasheet-tp65h035g4qs-650v-gan-fet-2 Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 1745 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.36 EUR
10+22.37 EUR
100+17.39 EUR
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TP65H035G4QS-TR TP65H035G4QS-TR Transphorm TP65H035G4QS_1v1_1-3386028.pdf GaN FETs GaN FET 650 V 46.5A TOLL
Produkt ist nicht verfügbar
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TP65H035G4WS TP65H035G4WS Transphorm 025_TP65H035G4WS_v3_6-1838752.pdf GaN FETs 650V, 35mOhm
auf Bestellung 509 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.46 EUR
30+18.00 EUR
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TP65H035G4WS TP65H035G4WS Transphorm TP65H035G4WS_v1.2.pdf Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.84 EUR
30+19.28 EUR
120+17.17 EUR
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TP65H035G4WSQA TP65H035G4WSQA Transphorm 024_TP65H035G4WSQA_v1_4-2604321.pdf GaN FETs GAN FET 650V 46.5A TO247
auf Bestellung 533 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.13 EUR
30+19.38 EUR
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TP65H035G4WSQA TP65H035G4WSQA Transphorm TP65H035G4WSQA_v1.2.pdf Description: 650 V 46.5 GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.67 EUR
30+20.54 EUR
120+18.49 EUR
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TP65H035WS TP65H035WS Transphorm datasheet-tp65h035ws-650v-gan-fet Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.88 EUR
30+22.75 EUR
120+21.50 EUR
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TP65H035WS TP65H035WS Transphorm TP65H035WS_v4-1842514.pdf MOSFET 650V, 35mOhm
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.89 EUR
10+30.34 EUR
120+25.91 EUR
510+23.53 EUR
1020+22.14 EUR
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TP65H035WSQA TP65H035WSQA Transphorm tp65h035wsqa_v1-1539039.pdf MOSFET 650V, 35mOhm
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.08 EUR
10+32.37 EUR
120+27.63 EUR
510+25.08 EUR
1020+23.62 EUR
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TP65H035WSQA TP65H035WSQA Transphorm tp65h035wsqa_v1-1.pdf Description: GANFET N-CH 650V 47.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
1+34.64 EUR
60+28.71 EUR
120+26.91 EUR
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TP65H050G4BS TP65H050G4BS Transphorm TP65H050G4BS_1v2-3159416.pdf GaN FETs 650V, 50mOhm
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.61 EUR
50+12.58 EUR
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TP65H050G4BS TP65H050G4BS Transphorm datasheet-tp65h050g4bs-650v-gan-fet Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 114 Stücke:
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TP65H050G4QS-TR TP65H050G4QS-TR Transphorm datasheet-tp65h050g4qs Description: 650 V 34 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H050G4QS-TR TP65H050G4QS-TR Transphorm TP65H050G4QS_1v0_1-3386041.pdf GaN FETs GaN FET 650 V 34A TOLL
Produkt ist nicht verfügbar
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TP65H050G4QS-TR TP65H050G4QS-TR Transphorm datasheet-tp65h050g4qs Description: 650 V 34 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 1615 Stücke:
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TP65H050G4WS TP65H050G4WS Transphorm datasheet-tp65h050g4ws-650v-gan-fet-2 Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 439 Stücke:
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TP65H050G4WS TP65H050G4WS Transphorm 020_TP65H050G4WS_1v1-2580572.pdf GaN FETs GAN FET 650V 34A TO247
auf Bestellung 294 Stücke:
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TP65H050G4YS TP65H050G4YS Transphorm 019_TP65H050G4YS_1v3-3385973.pdf GaN FETs GaN FET 650 V 35A TO-247-4
auf Bestellung 364 Stücke:
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TP65H050G4YS TP65H050G4YS Transphorm data-sheet-tp65h050g4ys Description: 650 V 35 A GAN FET HIGH VOLTAGE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 333 Stücke:
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TP65H050WS TP65H050WS Transphorm datasheet-tp65h050ws-650v-gan-fet Description: GANFET N-CH 650V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 229 Stücke:
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TP65H050WS TP65H050WS Transphorm tp65h050ws_v2-1539038.pdf MOSFET 650V, 50mOhm
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120+23.06 EUR
510+20.08 EUR
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2520+18.67 EUR
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TP65H050WSQA TP65H050WSQA Transphorm TP65H050WSQA_v3-1665088.pdf GaN FETs 650V, 50mOhm
auf Bestellung 320 Stücke:
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TP65H050WSQA TP65H050WSQA Transphorm datasheet-tp65h050wsqa Description: GANFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 21 Stücke:
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TP65H070G4LSGB-TR TP65H070G4LSGB-TR Transphorm datasheet-tp65h070g4lsgb Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H070G4LSGB-TR TP65H070G4LSGB-TR Transphorm 017_TP65H070G4LSGB_1v5-3179786.pdf GaN FETs GAN FET 650V 29A QFN8x8
auf Bestellung 2821 Stücke:
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TP65H070G4LSGB-TR TP65H070G4LSGB-TR Transphorm datasheet-tp65h070g4lsgb Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 2592 Stücke:
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1+19.54 EUR
10+13.28 EUR
100+9.97 EUR
500+9.42 EUR
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TP65H070G4LSG-TR TP65H070G4LSG-TR Transphorm 018_TP65H070G4LSG_1v1-3244312.pdf GaN FETs GAN FET 650V 29A QFN8x8
auf Bestellung 2756 Stücke:
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1+15.12 EUR
10+10.86 EUR
100+8.52 EUR
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TDADP-USBC-65W-KIT
Hersteller: Transphorm
Description: 65 W OPEN FRAME 65 W USB-C PD PO
Packaging: Bulk
Voltage - Output: 25V
Board Type: Fully Populated
Utilized IC / Part: TDADP-USBC-65W
Supplied Contents: Board(s)
Main Purpose: AC/DC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 65 W
Produkt ist nicht verfügbar
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TDAIO250P200-KIT tdaio250p200-quick-start-guide
TDAIO250P200-KIT
Hersteller: Transphorm
Description: 250W PFC + LLC POWER SUPPLY KIT
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 20A
Frequency - Switching: 200kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3202PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 250 W
Produkt ist nicht verfügbar
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TDHB-65H070L-DC datasheet-tp65h070l-650v-gan-fet
TDHB-65H070L-DC
Hersteller: Transphorm
Description: TP65H070L HALF-BRIDGE BOARD
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 13 Stücke:
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Anzahl Preis
1+278.20 EUR
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TDHB-65H070L-DC ser-guide-tdhbg1200dc100-2-5kw-half-bridge-evaluat-1595592.pdf
TDHB-65H070L-DC
Hersteller: Transphorm
Power Management IC Development Tools 2kW hard-switched daughter card
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TDHBG1200DC100-KIT qs009_v1-TDHBG1200DC100_0V1.pdf
TDHBG1200DC100-KIT
Hersteller: Transphorm
Description: EVAL BOARD FOR TP65H070L
Packaging: Bulk
Current - Output: 16A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H070L
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 1.2kW
Contents: Board(s)
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Anzahl Preis
1+553.27 EUR
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TDHBG1200DC100-KIT ser-guide-tdhbg1200dc100-2-5kw-half-bridge-evaluat-1595592.pdf
TDHBG1200DC100-KIT
Hersteller: Transphorm
Power Management IC Development Tools 2kW hard-switched Half-bridge, buck or boost
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Anzahl Preis
1+608.61 EUR
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TDHBG2500P100-KIT tdhbg2500p100-user-guide
TDHBG2500P100-KIT
Hersteller: Transphorm
Description: EVAL BOARD FOR TPH3212PS
Packaging: Bulk
Current - Output: 16.5A
Contents: Board(s), Power Supply
Regulator Topology: Boost, Buck, Half-Bridge
Utilized IC / Part: TPH3212PS
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Power - Output: 2.5kW
Produkt ist nicht verfügbar
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TDHBG2500P100-KIT dhbg2500p100-user-guide-20171206-1539032.pdf
TDHBG2500P100-KIT
Hersteller: Transphorm
Power Management IC Development Tools 2.5kW hard-switched Half-bridge, buck or boost
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TDINV1000P100-KIT tdinv1000p100-user-guide
TDINV1000P100-KIT
Hersteller: Transphorm
Description: 1KW INVERTER EVALUATION KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PSB
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Obsolete
Power - Output: 1 kW
Produkt ist nicht verfügbar
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TDINV1000P100-KIT tdinv1000p100_user_guide_20200915-1539036.pdf
TDINV1000P100-KIT
Hersteller: Transphorm
Power Management IC Development Tools 1kW inverter
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TDINV3000W050B-KIT TDINV3000W050_user_guide_0v5-1539037.pdf
TDINV3000W050B-KIT
Hersteller: Transphorm
Power Management IC Development Tools 3kW Totem-pole PFC
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1446.93 EUR
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TDINV3000W050B-KIT tdinv3000w050b-user-guide
TDINV3000W050B-KIT
Hersteller: Transphorm
Description: EVAL BOARD FOR TP65H050G4WS
Packaging: Box
Voltage - Input: 400V
Contents: Board(s)
Frequency - Switching: 50kHz
Regulator Topology: Full-Bridge
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4WS
Supplied Contents: Board(s)
Main Purpose: DC/AC Inverter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 3 kW
auf Bestellung 3 Stücke:
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Anzahl Preis
1+1367.52 EUR
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TDINV3000W050-KIT tdinv3000w050-user-guide
TDINV3000W050-KIT
Hersteller: Transphorm
Description: 3.0KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 22A
Frequency - Switching: 50kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050WS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Non-Isolated
Power - Output: 3 kW
Produkt ist nicht verfügbar
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TDINV3000W050-KIT TDINV3000W050_user_guide_0v5-1539037.pdf
TDINV3000W050-KIT
Hersteller: Transphorm
Power Management IC Development Tools 3kW inverter
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Lieferzeit 235-239 Tag (e)
Anzahl Preis
1+1322.46 EUR
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TDINV3000W50B-KIT 005_TP65H300G4LSGB_1v1-3385999.pdf
Hersteller: Transphorm
Power Management IC Development Tools 3 kW Inverter w/Microchip dsPIC
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Anzahl Preis
1+1446.93 EUR
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TDINV3500P100-KIT tdinv3500p100-user-guide
TDINV3500P100-KIT
Hersteller: Transphorm
Description: 3.5KW INVERTER EVAL KIT
auf Bestellung 14 Stücke:
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TDINV3500P100-KIT tdinv3500p100_user_guide_20200821-1539034.pdf
TDINV3500P100-KIT
Hersteller: Transphorm
Power Management IC Development Tools 3.5kW inverter (900V)
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TDPS1000E0E10-KIT TDPS1000E0E10-KIT.pdf
TDPS1000E0E10-KIT
Hersteller: Transphorm
Description: 1KW HB, BUCK OR BOOST EVAL KIT
Packaging: Bulk
Current - Output: 10A
Regulator Topology: Boost, Buck, Half-Bridge
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/DC Converter
Outputs and Type: 1, Non-Isolated
Part Status: Obsolete
Power - Output: 1 kW
Produkt ist nicht verfügbar
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TDPV1000E0C1-KIT TDPV1000E0C1-KIT_UG.pdf
TDPV1000E0C1-KIT
Hersteller: Transphorm
Description: 1KW INVERTER EVAL KIT
Packaging: Bulk
Current - Output: 10A
Frequency - Switching: 100kHz
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: TPH3206PS
Supplied Contents: Board(s), Power Supply
Main Purpose: DC/AC Converter
Outputs and Type: 1, Isolated
Part Status: Discontinued at Digi-Key
Power - Output: 1 kW
Produkt ist nicht verfügbar
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TDTTP2500B066B-KIT TDTTP2500B066B_KIT_Firmware_Guide_0V1_1-2448772.pdf
TDTTP2500B066B-KIT
Hersteller: Transphorm
Power Management IC Development Tools 2.5 kW Totem-pole w/Microchip dsPIC
auf Bestellung 1 Stücke:
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Anzahl Preis
1+2234.23 EUR
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TDTTP2500B066B-KIT
TDTTP2500B066B-KIT
Hersteller: Transphorm
Description: EVAL BOARD FOR TP65H050G4BS
Packaging: Bulk
Voltage - Output: 390V
Contents: Board(s)
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H050G4BS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 2.5kW
Produkt ist nicht verfügbar
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TDTTP2500P100-KIT tdttp2500p100-kit-user-guide
TDTTP2500P100-KIT
Hersteller: Transphorm
Description: EVAL BOARD FOR TPH3212PS
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 85 ~ 265 VAC
Contents: Board(s)
Frequency - Switching: 100kHz
Board Type: Fully Populated
Utilized IC / Part: TPH3212PS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Power - Output: 2.5kW
Produkt ist nicht verfügbar
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TDTTP2500P100-KIT tdttp2500p100-kit-user-guide-20171206-1661348.pdf
TDTTP2500P100-KIT
Hersteller: Transphorm
Power Management IC Development Tools 2.5kW Totem-pole PFC
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
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TDTTP4000
Hersteller: Transphorm
Transphorm
Produkt ist nicht verfügbar
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TDTTP4000W065AN-KIT tdttp4000w065an_user_guide_20210601-1892221.pdf
TDTTP4000W065AN-KIT
Hersteller: Transphorm
Power Management IC Development Tools 4kW Analog Totem-pole PFC
Produkt ist nicht verfügbar
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TDTTP4000W065AN-KIT tdttp4000w065an-user-guide
TDTTP4000W065AN-KIT
Hersteller: Transphorm
Description: EVAL BOARD FOR TDTTP4000W065AN
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Contents: Board(s)
Frequency - Switching: 65kHz
Board Type: Fully Populated
Utilized IC / Part: TDTTP4000W065AN
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 4 kW
auf Bestellung 1 Stücke:
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Anzahl Preis
1+1929.79 EUR
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TDTTP4000W066B-KIT dttp4000w066b-user-guide-20171023-1539028.pdf
TDTTP4000W066B-KIT
Hersteller: Transphorm
Power Management IC Development Tools 4kW Totem-pole PFC
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TDTTP4000W066B-KIT tdttp4000w066b-user-guide
TDTTP4000W066B-KIT
Hersteller: Transphorm
Description: EVAL BOARD FOR TP65H035WS
Packaging: Bulk
Voltage - Output: 390V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 15A
Contents: Board(s), Power Supply
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s), Power Supply
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Power - Output: 4kW
Produkt ist nicht verfügbar
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TDTTP4000W066C-KIT TDTTP4000W066C-KIT_UG.pdf
TDTTP4000W066C-KIT
Hersteller: Transphorm
Description: EVAL BOARD FOR TP65H035WS
Packaging: Bulk
Voltage - Output: 387V
Voltage - Input: 85 ~ 265 VAC
Frequency - Switching: 66kHz
Board Type: Fully Populated
Utilized IC / Part: TP65H035WS
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side and PFC
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 4kW
Contents: Board(s)
auf Bestellung 3 Stücke:
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Anzahl Preis
1+2283.95 EUR
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TDTTP4000W066C-KIT tdttp4000w066c_user_guide_2_20210318-2320291.pdf
TDTTP4000W066C-KIT
Hersteller: Transphorm
Power Management IC Development Tools 4 kW Totem-pole w/Microchip dsPIC
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TP65H015G5WS TP65H015G5WS_1v0-1.pdf
TP65H015G5WS
Hersteller: Transphorm
Description: 650 V 95 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5218 pF @ 400 V
auf Bestellung 593 Stücke:
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1+52.36 EUR
30+41.51 EUR
120+39.19 EUR
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TP65H015G5WS 027_TP65H015G5WS_2v0-2448878.pdf
TP65H015G5WS
Hersteller: Transphorm
GaN FETs GAN FET 650V 95A TO2 47
auf Bestellung 711 Stücke:
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Anzahl Preis
1+53.86 EUR
30+35.31 EUR
120+35.22 EUR
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TP65H035G4QS datasheet-tp65h035g4qs-650v-gan-fet-2
TP65H035G4QS
Hersteller: Transphorm
Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H035G4QS datasheet-tp65h035g4qs-650v-gan-fet-2
TP65H035G4QS
Hersteller: Transphorm
Description: 650 V 46.5 A GAN FET HIGH VOLTAG
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 1745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.36 EUR
10+22.37 EUR
100+17.39 EUR
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TP65H035G4QS-TR TP65H035G4QS_1v1_1-3386028.pdf
TP65H035G4QS-TR
Hersteller: Transphorm
GaN FETs GaN FET 650 V 46.5A TOLL
Produkt ist nicht verfügbar
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TP65H035G4WS 025_TP65H035G4WS_v3_6-1838752.pdf
TP65H035G4WS
Hersteller: Transphorm
GaN FETs 650V, 35mOhm
auf Bestellung 509 Stücke:
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Anzahl Preis
1+27.46 EUR
30+18.00 EUR
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TP65H035G4WS TP65H035G4WS_v1.2.pdf
TP65H035G4WS
Hersteller: Transphorm
Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 560 Stücke:
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Anzahl Preis
1+30.84 EUR
30+19.28 EUR
120+17.17 EUR
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TP65H035G4WSQA 024_TP65H035G4WSQA_v1_4-2604321.pdf
TP65H035G4WSQA
Hersteller: Transphorm
GaN FETs GAN FET 650V 46.5A TO247
auf Bestellung 533 Stücke:
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Anzahl Preis
1+29.13 EUR
30+19.38 EUR
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TP65H035G4WSQA TP65H035G4WSQA_v1.2.pdf
TP65H035G4WSQA
Hersteller: Transphorm
Description: 650 V 46.5 GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.67 EUR
30+20.54 EUR
120+18.49 EUR
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TP65H035WS datasheet-tp65h035ws-650v-gan-fet
TP65H035WS
Hersteller: Transphorm
Description: GANFET N-CH 650V 46.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.88 EUR
30+22.75 EUR
120+21.50 EUR
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TP65H035WS TP65H035WS_v4-1842514.pdf
TP65H035WS
Hersteller: Transphorm
MOSFET 650V, 35mOhm
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.89 EUR
10+30.34 EUR
120+25.91 EUR
510+23.53 EUR
1020+22.14 EUR
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TP65H035WSQA tp65h035wsqa_v1-1539039.pdf
TP65H035WSQA
Hersteller: Transphorm
MOSFET 650V, 35mOhm
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.08 EUR
10+32.37 EUR
120+27.63 EUR
510+25.08 EUR
1020+23.62 EUR
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TP65H035WSQA tp65h035wsqa_v1-1.pdf
TP65H035WSQA
Hersteller: Transphorm
Description: GANFET N-CH 650V 47.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.64 EUR
60+28.71 EUR
120+26.91 EUR
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TP65H050G4BS TP65H050G4BS_1v2-3159416.pdf
TP65H050G4BS
Hersteller: Transphorm
GaN FETs 650V, 50mOhm
auf Bestellung 55 Stücke:
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Anzahl Preis
1+20.61 EUR
50+12.58 EUR
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TP65H050G4BS datasheet-tp65h050g4bs-650v-gan-fet
TP65H050G4BS
Hersteller: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.26 EUR
50+12.93 EUR
100+12.47 EUR
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TP65H050G4QS-TR datasheet-tp65h050g4qs
TP65H050G4QS-TR
Hersteller: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Produkt ist nicht verfügbar
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TP65H050G4QS-TR TP65H050G4QS_1v0_1-3386041.pdf
TP65H050G4QS-TR
Hersteller: Transphorm
GaN FETs GaN FET 650 V 34A TOLL
Produkt ist nicht verfügbar
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TP65H050G4QS-TR datasheet-tp65h050g4qs
TP65H050G4QS-TR
Hersteller: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 1615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.98 EUR
10+13.88 EUR
100+10.44 EUR
500+9.70 EUR
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TP65H050G4WS datasheet-tp65h050g4ws-650v-gan-fet-2
TP65H050G4WS
Hersteller: Transphorm
Description: 650 V 34 A GAN FET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.69 EUR
30+15.32 EUR
120+14.29 EUR
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TP65H050G4WS 020_TP65H050G4WS_1v1-2580572.pdf
TP65H050G4WS
Hersteller: Transphorm
GaN FETs GAN FET 650V 34A TO247
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.97 EUR
30+14.85 EUR
510+14.41 EUR
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TP65H050G4YS 019_TP65H050G4YS_1v3-3385973.pdf
TP65H050G4YS
Hersteller: Transphorm
GaN FETs GaN FET 650 V 35A TO-247-4
auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.97 EUR
10+16.81 EUR
30+16.79 EUR
270+14.41 EUR
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TP65H050G4YS data-sheet-tp65h050g4ys
TP65H050G4YS
Hersteller: Transphorm
Description: 650 V 35 A GAN FET HIGH VOLTAGE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.92 EUR
10+18.32 EUR
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TP65H050WS datasheet-tp65h050ws-650v-gan-fet
TP65H050WS
Hersteller: Transphorm
Description: GANFET N-CH 650V 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.19 EUR
30+17.47 EUR
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TP65H050WS tp65h050ws_v2-1539038.pdf
TP65H050WS
Hersteller: Transphorm
MOSFET 650V, 50mOhm
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.09 EUR
10+26.73 EUR
120+23.06 EUR
510+20.08 EUR
1020+19.15 EUR
2520+18.67 EUR
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TP65H050WSQA TP65H050WSQA_v3-1665088.pdf
TP65H050WSQA
Hersteller: Transphorm
GaN FETs 650V, 50mOhm
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.34 EUR
10+28.05 EUR
30+19.45 EUR
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TP65H050WSQA datasheet-tp65h050wsqa
TP65H050WSQA
Hersteller: Transphorm
Description: GANFET N-CH 650V 36A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: GaNFET (Cascode Gallium Nitride FET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.64 EUR
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TP65H070G4LSGB-TR datasheet-tp65h070g4lsgb
TP65H070G4LSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
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TP65H070G4LSGB-TR 017_TP65H070G4LSGB_1v5-3179786.pdf
TP65H070G4LSGB-TR
Hersteller: Transphorm
GaN FETs GAN FET 650V 29A QFN8x8
auf Bestellung 2821 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.56 EUR
10+11.95 EUR
100+9.56 EUR
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TP65H070G4LSGB-TR datasheet-tp65h070g4lsgb
TP65H070G4LSGB-TR
Hersteller: Transphorm
Description: GANFET N-CH 650V 29A QFN8X8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 700µA
Supplier Device Package: 8-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
auf Bestellung 2592 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.54 EUR
10+13.28 EUR
100+9.97 EUR
500+9.42 EUR
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TP65H070G4LSG-TR 018_TP65H070G4LSG_1v1-3244312.pdf
TP65H070G4LSG-TR
Hersteller: Transphorm
GaN FETs GAN FET 650V 29A QFN8x8
auf Bestellung 2756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.12 EUR
10+10.86 EUR
100+8.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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