Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41135) > Seite 172 nach 686

Wählen Sie Seite:   [  << Vorherige Seite ]  1 68 136 167 168 169 170 171 172 173 174 175 176 177 204 272 340 408 476 544 612 680 686  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AU3PK-M3/87A AU3PK-M3/87A Vishay General Semiconductor - Diodes Division au3pm.pdf Description: DIODE AVALANCHE 800V 1.4A TO277A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AU3PM-M3/86A AU3PM-M3/86A Vishay General Semiconductor - Diodes Division au3pm.pdf Description: DIODE AVALANCHE 1KV 1.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.81 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
SS2P5-M3/84A SS2P5-M3/84A Vishay General Semiconductor - Diodes Division ss2p5.pdf Description: DIODE SCHOTTKY 50V 2A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
VESD01-02V-G-08 VESD01-02V-G-08 Vishay General Semiconductor - Diodes Division VESDxx-02V.pdf Description: TVS DIODE 1VWM 9VC SOD523
Power Line Protection: No
Power - Peak Pulse: 63W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 1.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 1V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD03-02V-G-08 VESD03-02V-G-08 Vishay General Semiconductor - Diodes Division VESDxx-02V.pdf Description: TVS DIODE 3VWM 12VC SOD523
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VESD05A1-02V-G-08 VESD05A1-02V-G-08 Vishay General Semiconductor - Diodes Division VESD05A1-02V%28-G3-08%2CHG3-08%29.pdf Description: TVS DIODE 5VWM 12VC SOD523
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 130pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Power Line Protection: No
Power - Peak Pulse: 192W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD05A1B-02V-G-08 VESD05A1B-02V-G-08 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 5VWM 11VC SOD523
Power Line Protection: No
Power - Peak Pulse: 33W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD05-02V-G-08 VESD05-02V-G-08 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 5VWM 20VC SOD523
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD12-02V-G-08 VESD12-02V-G-08 Vishay General Semiconductor - Diodes Division VESDxx-02V.pdf Description: TVS DIODE 12VWM 25VC SOD523
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD05A1B-02V-G-08 VESD05A1B-02V-G-08 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 5VWM 11VC SOD523
Power Line Protection: No
Power - Peak Pulse: 33W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD05-02V-G-08 VESD05-02V-G-08 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 5VWM 20VC SOD523
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD03-02V-G-08 VESD03-02V-G-08 Vishay General Semiconductor - Diodes Division VESDxx-02V.pdf Description: TVS DIODE 3VWM 12VC SOD523
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VESD01-02V-G-08 VESD01-02V-G-08 Vishay General Semiconductor - Diodes Division VESDxx-02V.pdf Description: TVS DIODE 1VWM 9VC SOD523
Power Line Protection: No
Power - Peak Pulse: 63W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 1.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 1V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD12-02V-G-08 VESD12-02V-G-08 Vishay General Semiconductor - Diodes Division VESDxx-02V.pdf Description: TVS DIODE 12VWM 25VC SOD523
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD05A1-02V-G-08 VESD05A1-02V-G-08 Vishay General Semiconductor - Diodes Division VESD05A1-02V%28-G3-08%2CHG3-08%29.pdf Description: TVS DIODE 5VWM 12VC SOD523
Power Line Protection: No
Power - Peak Pulse: 192W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 130pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-MBRA120TRPBF VS-MBRA120TRPBF Vishay General Semiconductor - Diodes Division VS-MBRA120TRPbF.pdf Description: DIODE SCHOTTKY 20V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-MURB1620CTPBF VS-MURB1620CTPBF Vishay General Semiconductor - Diodes Division MURB1620CTPBF%28-1PBF%29.pdf Description: DIODE ARRAY GP 200V 8A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AR1PM-M3/84A AR1PM-M3/84A Vishay General Semiconductor - Diodes Division ar1pm.pdf Description: DIODE AVALANCHE 1KV 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 11938 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
37+0.48 EUR
100+0.3 EUR
500+0.25 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
AS1PD-M3/84A AS1PD-M3/84A Vishay General Semiconductor - Diodes Division as1pm.pdf Description: DIODE AVAL 200V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 5371 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+0.87 EUR
100+0.6 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
AS1PG-M3/84A AS1PG-M3/84A Vishay General Semiconductor - Diodes Division as1pm.pdf Description: DIODE AVAL 400V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+0.87 EUR
100+0.6 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
AS1PJ-M3/84A AS1PJ-M3/84A Vishay General Semiconductor - Diodes Division as1pm.pdf Description: DIODE AVAL 600V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 2626 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+0.87 EUR
100+0.6 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
AS1PK-M3/84A AS1PK-M3/84A Vishay General Semiconductor - Diodes Division as1pm.pdf Description: DIODE AVAL 800V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS1PM-M3/84A AS1PM-M3/84A Vishay General Semiconductor - Diodes Division as1pm.pdf Description: DIODE AVALANCHE 1KV 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 11900 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
20+0.91 EUR
100+0.63 EUR
500+0.5 EUR
1000+0.4 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
AS4PM-M3/86A AS4PM-M3/86A Vishay General Semiconductor - Diodes Division as4pd.pdf Description: DIODE AVALANCHE 1KV 2.4A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.3 EUR
16+1.15 EUR
100+0.88 EUR
500+0.7 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AU1PM-M3/84A AU1PM-M3/84A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 1KV 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 56280 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
22+0.84 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AU2PJ-M3/86A AU2PJ-M3/86A Vishay General Semiconductor - Diodes Division au2pj.pdf Description: DIODE AVALANCHE 600V 1.6A TO277A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AU2PM-M3/86A AU2PM-M3/86A Vishay General Semiconductor - Diodes Division au2pm.pdf Description: DIODE AVALANCHE 1KV 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AU3PM-M3/86A AU3PM-M3/86A Vishay General Semiconductor - Diodes Division au3pm.pdf Description: DIODE AVALANCHE 1KV 1.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 8883 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
12+1.5 EUR
100+1.17 EUR
500+0.96 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
AS3PG-M3/86A AS3PG-M3/86A Vishay General Semiconductor - Diodes Division as3pd.pdf Description: DIODE AVALANCHE 400V 2.1A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
17+1.04 EUR
100+0.8 EUR
500+0.63 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYV26EGP-E3/73 BYV26EGP-E3/73 Vishay General Semiconductor - Diodes Division byv26dgp.pdf Description: DIODE AVALANCHE 1KV 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RGP10M-E3/73 RGP10M-E3/73 Vishay General Semiconductor - Diodes Division rgp10a.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 4480 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.18 EUR
13+1.37 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SB360-E3/73 SB360-E3/73 Vishay General Semiconductor - Diodes Division sb320.pdf Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MB6S-E3/80 MB6S-E3/80 Vishay General Semiconductor - Diodes Division mb2s.pdf Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9984 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.25 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
SBYV26C-E3/54 SBYV26C-E3/54 Vishay General Semiconductor - Diodes Division sbyv26c.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
auf Bestellung 28522 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.25 EUR
13+1.42 EUR
100+0.94 EUR
500+0.74 EUR
1000+0.67 EUR
2000+0.61 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BAT54C-E3-08 BAT54C-E3-08 Vishay General Semiconductor - Diodes Division bat54_bat54a_bat54c_bat54s.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 69809 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
US1J-E3/61T US1J-E3/61T Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf description Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 49185 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
VS-10TTS08STRLPBF VS-10TTS08STRLPBF Vishay General Semiconductor - Diodes Division 10TTS08S.pdf Description: SCR 800V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Current - On State (It (AV)) (Max): 6.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.15 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16-E3-08 BAS16-E3-08 Vishay General Semiconductor - Diodes Division bas16.pdf Description: DIODE STANDARD 75V 150MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 1218 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
176+0.1 EUR
500+0.073 EUR
1000+0.064 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BAW56-E3-08 BAW56-E3-08 Vishay General Semiconductor - Diodes Division baw56.pdf Description: DIODE ARRAY GP 70V 250MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 11977 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
53+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C5V6P-E3-08 BZD27C5V6P-E3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
auf Bestellung 31223 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
27+0.66 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
VS-MBRA140TRPBF Vishay General Semiconductor - Diodes Division vs-mbra140trpbf.pdf Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 8609 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
25+0.73 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.32 EUR
2000+0.29 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
VS-MBRS1100TRPBF VS-MBRS1100TRPBF Vishay General Semiconductor - Diodes Division VS-MBRS190TRPBF_MBRS1100TRPBF.pdf Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-MBRS360TRPBF VS-MBRS360TRPBF Vishay General Semiconductor - Diodes Division VS-MBRS360TRPBF.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SL03-GS08 SL03-GS08 Vishay General Semiconductor - Diodes Division sl02.pdf Description: DIODE SCHOTTKY 30V 1.1A DO219AB
auf Bestellung 14461 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VBUS052BD-HTF-GS08 VBUS052BD-HTF-GS08 Vishay General Semiconductor - Diodes Division vbus052bd-htf.pdf Description: TVS DIODE 5VWM 16VC 4-LLP75
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 4-LLP75
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AS4PD-M3/86A AS4PD-M3/86A Vishay General Semiconductor - Diodes Division as4pd.pdf Description: DIODE AVALANCHE 200V 2.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3805 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
19+0.97 EUR
100+0.67 EUR
500+0.56 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
AU2PK-M3/86A AU2PK-M3/86A Vishay General Semiconductor - Diodes Division au2pm.pdf Description: DIODE AVALANCHE 800V 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS4PJ-M3/86A AS4PJ-M3/86A Vishay General Semiconductor - Diodes Division as4pd.pdf Description: DIODE AVALANCHE 600V 2.4A TO277A
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
auf Bestellung 929 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
16+1.11 EUR
100+0.85 EUR
500+0.67 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AR1PJ-M3/84A AR1PJ-M3/84A Vishay General Semiconductor - Diodes Division ar1pm.pdf Description: DIODE AVALANCHE 600V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 3241 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
29+0.62 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.24 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
AR1PG-M3/84A AR1PG-M3/84A Vishay General Semiconductor - Diodes Division ar1pm.pdf Description: DIODE AVALANCHE 400V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 5860 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
29+0.62 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.24 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
VCUT05D1-SD0-G4-08 VCUT05D1-SD0-G4-08 Vishay General Semiconductor - Diodes Division VCUT05D1-SD0.pdf Description: TVS DIODE 5.5VWM 13VC CLP0603
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VCUT05D1-SD0-G4-08 VCUT05D1-SD0-G4-08 Vishay General Semiconductor - Diodes Division VCUT05D1-SD0.pdf Description: TVS DIODE 5.5VWM 13VC CLP0603
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AU1PD-M3/84A AU1PD-M3/84A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 200V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 8880 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
49+0.36 EUR
100+0.29 EUR
500+0.27 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
AU1PG-M3/84A AU1PG-M3/84A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 400V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 4452 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
40+0.44 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.27 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
SS2P5-M3/84A SS2P5-M3/84A Vishay General Semiconductor - Diodes Division ss2p5.pdf Description: DIODE SCHOTTKY 50V 2A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 6856 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
69+0.26 EUR
100+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
AU1PJ-M3/84A AU1PJ-M3/84A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 600V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 4504 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
36+0.5 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.27 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
VS-FB190SA10 VS-FB190SA10 Vishay General Semiconductor - Diodes Division VS-FB190SA10.pdf Description: MOSFET N-CH 100V 190A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tj)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4.35V @ 250µA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-UFB280FA40 VS-UFB280FA40 Vishay General Semiconductor - Diodes Division vs-ufb280fa40.pdf Description: DIODE MODULE GP 400V 170A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 170A (DC)
Supplier Device Package: SOT-227
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
1+46.83 EUR
10+34.35 EUR
100+28.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
VSSA310S-M3/61T VSSA310S-M3/61T Vishay General Semiconductor - Diodes Division vssa310s.pdf Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
auf Bestellung 10531 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
59+0.3 EUR
100+0.25 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
VSB2200S-M3/54 VSB2200S-M3/54 Vishay General Semiconductor - Diodes Division VSB2200S.pdf Description: DIODE SCHOTTKY 200V 2A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AU3PK-M3/87A au3pm.pdf
AU3PK-M3/87A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.4A TO277A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AU3PM-M3/86A au3pm.pdf
AU3PM-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.81 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
SS2P5-M3/84A ss2p5.pdf
SS2P5-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
VESD01-02V-G-08 VESDxx-02V.pdf
VESD01-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 1VWM 9VC SOD523
Power Line Protection: No
Power - Peak Pulse: 63W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 1.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 1V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD03-02V-G-08 VESDxx-02V.pdf
VESD03-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3VWM 12VC SOD523
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VESD05A1-02V-G-08 VESD05A1-02V%28-G3-08%2CHG3-08%29.pdf
VESD05A1-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC SOD523
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 130pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Power Line Protection: No
Power - Peak Pulse: 192W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD05A1B-02V-G-08
VESD05A1B-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 11VC SOD523
Power Line Protection: No
Power - Peak Pulse: 33W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD05-02V-G-08
VESD05-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 20VC SOD523
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD12-02V-G-08 VESDxx-02V.pdf
VESD12-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 25VC SOD523
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD05A1B-02V-G-08
VESD05A1B-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 11VC SOD523
Power Line Protection: No
Power - Peak Pulse: 33W
Voltage - Clamping (Max) @ Ipp: 11V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 19pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD05-02V-G-08
VESD05-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 20VC SOD523
Power Line Protection: No
Power - Peak Pulse: 120W
Voltage - Clamping (Max) @ Ipp: 20V (Typ)
Voltage - Breakdown (Min): 6.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Capacitance @ Frequency: 55pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD03-02V-G-08 VESDxx-02V.pdf
VESD03-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3VWM 12VC SOD523
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VESD01-02V-G-08 VESDxx-02V.pdf
VESD01-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 1VWM 9VC SOD523
Power Line Protection: No
Power - Peak Pulse: 63W
Voltage - Clamping (Max) @ Ipp: 9V (Typ)
Voltage - Breakdown (Min): 1.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 1V (Max)
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Capacitance @ Frequency: 180pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD12-02V-G-08 VESDxx-02V.pdf
VESD12-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 25VC SOD523
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 25V (Typ)
Voltage - Breakdown (Min): 14V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 12V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 30pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VESD05A1-02V-G-08 VESD05A1-02V%28-G3-08%2CHG3-08%29.pdf
VESD05A1-02V-G-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC SOD523
Power Line Protection: No
Power - Peak Pulse: 192W
Voltage - Clamping (Max) @ Ipp: 12V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Capacitance @ Frequency: 130pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-MBRA120TRPBF VS-MBRA120TRPbF.pdf
VS-MBRA120TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO214AC
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-MURB1620CTPBF MURB1620CTPBF%28-1PBF%29.pdf
VS-MURB1620CTPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AR1PM-M3/84A ar1pm.pdf
AR1PM-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 120 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 11938 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
37+0.48 EUR
100+0.3 EUR
500+0.25 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
AS1PD-M3/84A as1pm.pdf
AS1PD-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 5371 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.87 EUR
100+0.6 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
AS1PG-M3/84A as1pm.pdf
AS1PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 1119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.87 EUR
100+0.6 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
AS1PJ-M3/84A as1pm.pdf
AS1PJ-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 2626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.87 EUR
100+0.6 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
AS1PK-M3/84A as1pm.pdf
AS1PK-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS1PM-M3/84A as1pm.pdf
AS1PM-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO220AA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 11900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
20+0.91 EUR
100+0.63 EUR
500+0.5 EUR
1000+0.4 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
AS4PM-M3/86A as4pd.pdf
AS4PM-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 2.4A TO277A
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.3 EUR
16+1.15 EUR
100+0.88 EUR
500+0.7 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AU1PM-M3/84A au1pm.pdf
AU1PM-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 56280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.84 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AU2PJ-M3/86A au2pj.pdf
AU2PJ-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.6A TO277A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AU2PM-M3/86A au2pm.pdf
AU2PM-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AU3PM-M3/86A au3pm.pdf
AU3PM-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A TO277A
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 42pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 8883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
12+1.5 EUR
100+1.17 EUR
500+0.96 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
AS3PG-M3/86A as3pd.pdf
AS3PG-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2.1A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.1A
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
17+1.04 EUR
100+0.8 EUR
500+0.63 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYV26EGP-E3/73 byv26dgp.pdf
BYV26EGP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RGP10M-E3/73 rgp10a.pdf
RGP10M-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 4480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
13+1.37 EUR
100+0.91 EUR
500+0.71 EUR
1000+0.64 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SB360-E3/73 sb320.pdf
SB360-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MB6S-E3/80 mb2s.pdf
MB6S-E3/80
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 0.5A TO269AA
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TO-269AA (MBS)
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
23+0.77 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
SBYV26C-E3/54 sbyv26c.pdf
SBYV26C-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
auf Bestellung 28522 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
13+1.42 EUR
100+0.94 EUR
500+0.74 EUR
1000+0.67 EUR
2000+0.61 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BAT54C-E3-08 bat54_bat54a_bat54c_bat54s.pdf
BAT54C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 69809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
US1J-E3/61T description us1_test_dcicons.pdf
US1J-E3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 49185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
41+0.43 EUR
100+0.27 EUR
500+0.2 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
VS-10TTS08STRLPBF 10TTS08S.pdf
VS-10TTS08STRLPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 800V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A @ 50Hz
Current - On State (It (AV)) (Max): 6.5 A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Voltage - On State (Vtm) (Max): 1.15 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263AB (D2PAK)
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 10 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS16-E3-08 bas16.pdf
BAS16-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 1218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
176+0.1 EUR
500+0.073 EUR
1000+0.064 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BAW56-E3-08 baw56.pdf
BAW56-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 70V 250MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
auf Bestellung 11977 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
53+0.34 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
BZD27C5V6P-E3-08 bzd27series.pdf
BZD27C5V6P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
auf Bestellung 31223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
27+0.66 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
VS-MBRA140TRPBF vs-mbra140trpbf.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 38pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
auf Bestellung 8609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.73 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.32 EUR
2000+0.29 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
VS-MBRS1100TRPBF VS-MBRS190TRPBF_MBRS1100TRPBF.pdf
VS-MBRS1100TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-MBRS360TRPBF VS-MBRS360TRPBF.pdf
VS-MBRS360TRPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SL03-GS08 sl02.pdf
SL03-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1.1A DO219AB
auf Bestellung 14461 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
VBUS052BD-HTF-GS08 vbus052bd-htf.pdf
VBUS052BD-HTF-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 16VC 4-LLP75
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 4-LLP75
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AS4PD-M3/86A as4pd.pdf
AS4PD-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2.4A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
19+0.97 EUR
100+0.67 EUR
500+0.56 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
AU2PK-M3/86A au2pm.pdf
AU2PK-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1.3A TO277A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 1.3A
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AS4PJ-M3/86A as4pd.pdf
AS4PJ-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2.4A TO277A
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 962 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Avalanche
auf Bestellung 929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
16+1.11 EUR
100+0.85 EUR
500+0.67 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
AR1PJ-M3/84A ar1pm.pdf
AR1PJ-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 3241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
29+0.62 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.24 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
AR1PG-M3/84A ar1pm.pdf
AR1PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 5860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
29+0.62 EUR
100+0.42 EUR
500+0.32 EUR
1000+0.24 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
VCUT05D1-SD0-G4-08 VCUT05D1-SD0.pdf
VCUT05D1-SD0-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 13VC CLP0603
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VCUT05D1-SD0-G4-08 VCUT05D1-SD0.pdf
VCUT05D1-SD0-G4-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 13VC CLP0603
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AU1PD-M3/84A au1pm.pdf
AU1PD-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 8880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
49+0.36 EUR
100+0.29 EUR
500+0.27 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
AU1PG-M3/84A au1pm.pdf
AU1PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 4452 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
40+0.44 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.27 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
SS2P5-M3/84A ss2p5.pdf
SS2P5-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO220AA
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Cut Tape (CT)
auf Bestellung 6856 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
69+0.26 EUR
100+0.24 EUR
500+0.22 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
AU1PJ-M3/84A au1pm.pdf
AU1PJ-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 4504 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
36+0.5 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.27 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
VS-FB190SA10 VS-FB190SA10.pdf
VS-FB190SA10
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MOSFET N-CH 100V 190A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tj)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 180A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 4.35V @ 250µA
Supplier Device Package: SOT-227
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-UFB280FA40 vs-ufb280fa40.pdf
VS-UFB280FA40
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 400V 170A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 93 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 170A (DC)
Supplier Device Package: SOT-227
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.83 EUR
10+34.35 EUR
100+28.05 EUR
Im Einkaufswagen  Stück im Wert von  UAH
VSSA310S-M3/61T vssa310s.pdf
VSSA310S-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1.7A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
auf Bestellung 10531 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
59+0.3 EUR
100+0.25 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
VSB2200S-M3/54 VSB2200S.pdf
VSB2200S-M3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 68 136 167 168 169 170 171 172 173 174 175 176 177 204 272 340 408 476 544 612 680 686  [ Nächste Seite >> ]