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RS1D-M3/61T RS1D-M3/61T Vishay General Semiconductor - Diodes Division rs1a.pdf Description: DIODE STANDARD 200V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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RS1G-M3/61T RS1G-M3/61T Vishay General Semiconductor - Diodes Division rs1a.pdf Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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RS1J-M3/61T Vishay General Semiconductor - Diodes Division rs1a.pdf Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS1K-M3/61T RS1K-M3/61T Vishay General Semiconductor - Diodes Division rs1a.pdf Description: DIODE STANDARD 800V 1A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
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RS2B-M3/52T RS2B-M3/52T Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE GEN PURP 100V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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RS2D-M3/52T RS2D-M3/52T Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE GEN PURP 200V 1.5A DO214AA
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RS2G-M3/52T RS2G-M3/52T Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 50V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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RS2J-M3/52T RS2J-M3/52T Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 600V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RS2K-M3/52T RS2K-M3/52T Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 800V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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RS3A-M3/57T RS3A-M3/57T Vishay General Semiconductor - Diodes Division RS3A_thru_RS3K_7-31-18.pdf Description: DIODE GEN PURP 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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RS3B-M3/57T RS3B-M3/57T Vishay General Semiconductor - Diodes Division RS3A_thru_RS3K_7-31-18.pdf Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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RS3D-M3/57T RS3D-M3/57T Vishay General Semiconductor - Diodes Division rs3a.pdf Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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RS3G-M3/57T RS3G-M3/57T Vishay General Semiconductor - Diodes Division rs3a.pdf Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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RS3J-M3/57T RS3J-M3/57T Vishay General Semiconductor - Diodes Division RS3A_thru_RS3K_7-31-18.pdf Description: DIODE STANDARD 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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RS3K-M3/57T RS3K-M3/57T Vishay General Semiconductor - Diodes Division RS3A_thru_RS3K_7-31-18.pdf Description: DIODE GEN PURP 800V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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S07D-M-08 S07D-M-08 Vishay General Semiconductor - Diodes Division s07bm.pdf Description: DIODE GP 200V 700MA DO219AB
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
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S07G-GS08 S07G-GS08 Vishay General Semiconductor - Diodes Division s07b.pdf Description: DIODE STD 400V 700MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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S07G-M-08 S07G-M-08 Vishay General Semiconductor - Diodes Division s07bm.pdf Description: DIODE STD 400V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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S07J-M-08 S07J-M-08 Vishay General Semiconductor - Diodes Division s07bm.pdf Description: DIODE GP 600V 700MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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S1FLG-M-08 S1FLG-M-08 Vishay General Semiconductor - Diodes Division s1flx-m.pdf Description: DIODE STD 400V 700MA DO219AB
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
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S1FLK-GS08 S1FLK-GS08 Vishay General Semiconductor - Diodes Division s1flbdgjkm.pdf Description: DIODE GP 800V 700MA DO219AB
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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S1K-M3/61T S1K-M3/61T Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GPP 1A 800V DO-214AC
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S2A-M3/52T S2A-M3/52T Vishay General Semiconductor - Diodes Division s2a.pdf Description: DIODE GEN PURP 50V 1.5A DO214AA
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S392D-HG3-08 S392D-HG3-08 Vishay General Semiconductor - Diodes Division S392D-G.pdf Description: RF DIODE PIN 30V SOT-23-3
Current - Max: 50 mA
Supplier Device Package: SOT-23-3
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 60Ohm @ 1.5mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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S3A-M3/57T S3A-M3/57T Vishay General Semiconductor - Diodes Division s3a.pdf Description: DIODE GEN PURP 50V 3A DO214AB
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
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S3M-M3/57T S3M-M3/57T Vishay General Semiconductor - Diodes Division s3a.pdf Description: DIODE STANDARD 1000V 3A DO214AB
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
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S5M-M3/57T S5M-M3/57T Vishay General Semiconductor - Diodes Division s5a.pdf Description: DIODE STANDARD 1000V 5A DO214AB
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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S5MS-E3/57T S5MS-E3/57T Vishay General Semiconductor - Diodes Division s5ms.pdf Description: DIODE STD 1000V 1.6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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S5MS-M3/57T S5MS-M3/57T Vishay General Semiconductor - Diodes Division Description: DIODE STD 1000V 1.6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 1000 V
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S5PMS-M3/86A S5PMS-M3/86A Vishay General Semiconductor - Diodes Division s5pms.pdf Description: DIODE STANDARD 1000V 1.8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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SA2K-M3/61T SA2K-M3/61T Vishay General Semiconductor - Diodes Division sa2b.pdf Description: DIODE GPP 2A 800V DO-214AC
Produkt ist nicht verfügbar
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SA2M-M3/61T SA2M-M3/61T Vishay General Semiconductor - Diodes Division sa2b.pdf Description: DIODE GEN PURP 1KV 2A DO214AC
Current - Reverse Leakage @ Vr: 3 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD101AW-E3-08 SD101AW-E3-08 Vishay General Semiconductor - Diodes Division sd101aw_sd101bw_sd101cw.pdf Description: DIODE SCHOTTKY 60V 30MA SOD123
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Schottky
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9000+0.081 EUR
15000+0.067 EUR
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SD101AW-G3-08 SD101AW-G3-08 Vishay General Semiconductor - Diodes Division sd101aw-g_sd101bw-g_sd101cw-g.pdf Description: DIODE SCHOTTKY 60V 30MA SOD123
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
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SD101AW-HE3-08 SD101AW-HE3-08 Vishay General Semiconductor - Diodes Division sd101aw_sd101bw_sd101cw.pdf Description: DIODE SCHOTTKY 60V 30MA SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
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SD101AWS-HE3-08 SD101AWS-HE3-08 Vishay General Semiconductor - Diodes Division sd101aws_sd101bws_sd101cws.pdf Description: DIODE SCHOTTKY 60V 30MA SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
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SD101BW-E3-08 SD101BW-E3-08 Vishay General Semiconductor - Diodes Division sd101aw_sd101bw_sd101cw.pdf Description: DIODE SCHOTTKY 50V 30MA SOD123
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
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6000+0.092 EUR
9000+0.087 EUR
15000+0.068 EUR
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SD101BW-G3-08 SD101BW-G3-08 Vishay General Semiconductor - Diodes Division sd101aw-g_sd101bw-g_sd101cw-g.pdf Description: DIODE SCHOTTKY 50V 30MA SOD123
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD101BW-HE3-08 SD101BW-HE3-08 Vishay General Semiconductor - Diodes Division sd101aw_sd101bw_sd101cw.pdf Description: DIODE SCHOTTKY 50V 30MA SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Produkt ist nicht verfügbar
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SD101BWS-E3-08 SD101BWS-E3-08 Vishay General Semiconductor - Diodes Division sd101aws.pdf Description: DIODE SCHOTTKY 50V 30MA SOD323
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
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SD101BWS-G3-08 SD101BWS-G3-08 Vishay General Semiconductor - Diodes Division sd101ws-g.pdf Description: DIODE SCHOTTKY 50V 30MA SOD323
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
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SD101BWS-HE3-08 SD101BWS-HE3-08 Vishay General Semiconductor - Diodes Division sd101aws.pdf Description: DIODE SCHOTTKY 50V 30MA SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD101CWS-G3-08 SD101CWS-G3-08 Vishay General Semiconductor - Diodes Division sd101ws-g.pdf Description: DIODE SCHOTTKY 40V 30MA SOD323
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD103AW-G3-08 SD103AW-G3-08 Vishay General Semiconductor - Diodes Division sd103aw_sd103bw_sd103cw.pdf Description: DIODE SCHOTTKY 40V 350MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
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SD103AW-HE3-08 SD103AW-HE3-08 Vishay General Semiconductor - Diodes Division sd103aw_sd103bw_sd103cw.pdf Description: DIODE SCHOTTKY 40V 350MA SOD123
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 350mA
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Technology: Schottky
Produkt ist nicht verfügbar
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SD103AWS-HE3-08 SD103AWS-HE3-08 Vishay General Semiconductor - Diodes Division sd103aws_sd103bws_sd103cws.pdf Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SD103BW-G3-08 SD103BW-G3-08 Vishay General Semiconductor - Diodes Division sd103aw_sd103bw_sd103cw.pdf Description: DIODE SCHOTTKY 30V 350MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Produkt ist nicht verfügbar
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SD103BW-HE3-08 SD103BW-HE3-08 Vishay General Semiconductor - Diodes Division sd103aw_sd103bw_sd103cw.pdf Description: DIODE SCHOTTKY 30V 350MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SD103BWS-E3-08 SD103BWS-E3-08 Vishay General Semiconductor - Diodes Division sd103aws_sd103bws_sd103cws.pdf Description: DIODE SCHOTTKY 30V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
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SD103BWS-G3-08 SD103BWS-G3-08 Vishay General Semiconductor - Diodes Division sd103aws_sd103bws_sd103cws.pdf Description: DIODE SCHOTTKY 30V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Produkt ist nicht verfügbar
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SD103BWS-HE3-08 SD103BWS-HE3-08 Vishay General Semiconductor - Diodes Division sd103aws_sd103bws_sd103cws.pdf Description: DIODE SCHOTTKY 30V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SD103CW-G3-08 SD103CW-G3-08 Vishay General Semiconductor - Diodes Division sd103aw_sd103bw_sd103cw.pdf Description: DIODE SCHOTTKY 20V 350MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Produkt ist nicht verfügbar
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SD103CWS-HE3-08 SD103CWS-HE3-08 Vishay General Semiconductor - Diodes Division sd103aws_sd103bws_sd103cws.pdf Description: DIODE SCHOTTKY 20V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SE20AFB-M3/6A SE20AFB-M3/6A Vishay General Semiconductor - Diodes Division se20afb.pdf Description: DIODE GEN PURP 100V 1.3A DO221AC
Produkt ist nicht verfügbar
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SE30AFB-M3/6A SE30AFB-M3/6A Vishay General Semiconductor - Diodes Division se30afb.pdf Description: DIODE GEN PURP 100V 1.4A DO221AC
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SE40PG-M3/86A SE40PG-M3/86A Vishay General Semiconductor - Diodes Division se40pb.pdf Description: DIODE STANDARD 400V 2.4A TO277A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Produkt ist nicht verfügbar
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SE40PJ-M3/86A SE40PJ-M3/86A Vishay General Semiconductor - Diodes Division se40pb.pdf Description: DIODE GEN PURP 600V 2.4A TO277A
Produkt ist nicht verfügbar
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SE70PG-M3/86A SE70PG-M3/86A Vishay General Semiconductor - Diodes Division se70pb.pdf Description: DIODE GEN PURP 400V 2.9A TO277A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.6 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SL03-M-08 SL03-M-08 Vishay General Semiconductor - Diodes Division sl02m.pdf Description: DIODE SCHOTTKY 30V DO219-M
Produkt ist nicht verfügbar
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SL42-M3/57T SL42-M3/57T Vishay General Semiconductor - Diodes Division sl42.pdf Description: DIODE SCHOTTKY 20V 4A DO214AB
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 4 A
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Voltage - DC Reverse (Vr) (Max): 20 V
Produkt ist nicht verfügbar
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RS1D-M3/61T rs1a.pdf
RS1D-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1G-M3/61T rs1a.pdf
RS1G-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS1J-M3/61T rs1a.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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RS1K-M3/61T rs1a.pdf
RS1K-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO214AC
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Produkt ist nicht verfügbar
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RS2B-M3/52T rs2a.pdf
RS2B-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.5A DO214AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 1.5A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS2D-M3/52T rs2a.pdf
RS2D-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1.5A DO214AA
Produkt ist nicht verfügbar
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RS2G-M3/52T rs2a.pdf
RS2G-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Produkt ist nicht verfügbar
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RS2J-M3/52T rs2a.pdf
RS2J-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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RS2K-M3/52T rs2a.pdf
RS2K-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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RS3A-M3/57T RS3A_thru_RS3K_7-31-18.pdf
RS3A-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
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RS3B-M3/57T RS3A_thru_RS3K_7-31-18.pdf
RS3B-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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RS3D-M3/57T rs3a.pdf
RS3D-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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RS3G-M3/57T rs3a.pdf
RS3G-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 44pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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RS3J-M3/57T RS3A_thru_RS3K_7-31-18.pdf
RS3J-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RS3K-M3/57T RS3A_thru_RS3K_7-31-18.pdf
RS3K-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 3A DO214AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S07D-M-08 s07bm.pdf
S07D-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 700MA DO219AB
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Produkt ist nicht verfügbar
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S07G-GS08 s07b.pdf
S07G-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 700MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
15000+0.12 EUR
Mindestbestellmenge: 3000
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S07G-M-08 s07bm.pdf
S07G-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 500MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 700 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S07J-M-08 s07bm.pdf
S07J-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 700MA DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S1FLG-M-08 s1flx-m.pdf
S1FLG-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 400V 700MA DO219AB
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Produkt ist nicht verfügbar
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S1FLK-GS08 s1flbdgjkm.pdf
S1FLK-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 800V 700MA DO219AB
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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S1K-M3/61T s1.pdf
S1K-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 1A 800V DO-214AC
Produkt ist nicht verfügbar
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S2A-M3/52T s2a.pdf
S2A-M3/52T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1.5A DO214AA
Produkt ist nicht verfügbar
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S392D-HG3-08 S392D-G.pdf
S392D-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RF DIODE PIN 30V SOT-23-3
Current - Max: 50 mA
Supplier Device Package: SOT-23-3
Voltage - Peak Reverse (Max): 30V
Resistance @ If, F: 60Ohm @ 1.5mA, 100MHz
Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
Operating Temperature: 125°C (TJ)
Diode Type: PIN - 1 Pair Series Connection
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S3A-M3/57T s3a.pdf
S3A-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 3A DO214AB
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar
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S3M-M3/57T s3a.pdf
S3M-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO214AB
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Produkt ist nicht verfügbar
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S5M-M3/57T s5a.pdf
S5M-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 5A DO214AB
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S5MS-E3/57T s5ms.pdf
S5MS-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
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S5MS-M3/57T
S5MS-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.6A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 1000 V
Produkt ist nicht verfügbar
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S5PMS-M3/86A s5pms.pdf
S5PMS-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1.8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SA2K-M3/61T sa2b.pdf
SA2K-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GPP 2A 800V DO-214AC
Produkt ist nicht verfügbar
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SA2M-M3/61T sa2b.pdf
SA2M-M3/61T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 2A DO214AC
Current - Reverse Leakage @ Vr: 3 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD101AW-E3-08 sd101aw_sd101bw_sd101cw.pdf
SD101AW-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA SOD123
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Schottky
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.095 EUR
6000+0.086 EUR
9000+0.081 EUR
15000+0.067 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SD101AW-G3-08 sd101aw-g_sd101bw-g_sd101cw-g.pdf
SD101AW-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA SOD123
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD101AW-HE3-08 sd101aw_sd101bw_sd101cw.pdf
SD101AW-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD101AWS-HE3-08 sd101aws_sd101bws_sd101cws.pdf
SD101AWS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD101BW-E3-08 sd101aw_sd101bw_sd101cw.pdf
SD101BW-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 30MA SOD123
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
6000+0.092 EUR
9000+0.087 EUR
15000+0.068 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SD101BW-G3-08 sd101aw-g_sd101bw-g_sd101cw-g.pdf
SD101BW-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 30MA SOD123
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SD101BW-HE3-08 sd101aw_sd101bw_sd101cw.pdf
SD101BW-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 30MA SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-123
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Produkt ist nicht verfügbar
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SD101BWS-E3-08 sd101aws.pdf
SD101BWS-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 30MA SOD323
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD101BWS-G3-08 sd101ws-g.pdf
SD101BWS-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 30MA SOD323
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD101BWS-HE3-08 sd101aws.pdf
SD101BWS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 30MA SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD101CWS-G3-08 sd101ws-g.pdf
SD101CWS-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 30MA SOD323
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 1 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD103AW-G3-08 sd103aw_sd103bw_sd103cw.pdf
SD103AW-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 350MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SD103AW-HE3-08 sd103aw_sd103bw_sd103cw.pdf
SD103AW-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 350MA SOD123
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 350mA
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Technology: Schottky
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD103AWS-HE3-08 sd103aws_sd103bws_sd103cws.pdf
SD103AWS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD103BW-G3-08 sd103aw_sd103bw_sd103cw.pdf
SD103BW-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 350MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD103BW-HE3-08 sd103aw_sd103bw_sd103cw.pdf
SD103BW-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 350MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD103BWS-E3-08 sd103aws_sd103bws_sd103cws.pdf
SD103BWS-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD103BWS-G3-08 sd103aws_sd103bws_sd103cws.pdf
SD103BWS-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD103BWS-HE3-08 sd103aws_sd103bws_sd103cws.pdf
SD103BWS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD103CW-G3-08 sd103aw_sd103bw_sd103cw.pdf
SD103CW-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 350MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD103CWS-HE3-08 sd103aws_sd103bws_sd103cws.pdf
SD103CWS-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 350MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SE20AFB-M3/6A se20afb.pdf
SE20AFB-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.3A DO221AC
Produkt ist nicht verfügbar
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SE30AFB-M3/6A se30afb.pdf
SE30AFB-M3/6A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1.4A DO221AC
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-221AC (SlimSMA)
Current - Average Rectified (Io): 1.4A
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SE40PG-M3/86A se40pb.pdf
SE40PG-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2.4A TO277A
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.4A
Produkt ist nicht verfügbar
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SE40PJ-M3/86A se40pb.pdf
SE40PJ-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2.4A TO277A
Produkt ist nicht verfügbar
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SE70PG-M3/86A se70pb.pdf
SE70PG-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2.9A TO277A
Current - Reverse Leakage @ Vr: 20 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 2.9A
Capacitance @ Vr, F: 76pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.6 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SL03-M-08 sl02m.pdf
SL03-M-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V DO219-M
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SL42-M3/57T sl42.pdf
SL42-M3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 4A DO214AB
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 4 A
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 4A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Voltage Coupled to Current - Reverse Leakage @ Vr: 20
Voltage - DC Reverse (Vr) (Max): 20 V
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