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BYM07-400-E3/83 BYM07-400-E3/83 Vishay General Semiconductor - Diodes Division egl34.pdf Description: DIODE GP 400V 500MA DO213AA
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
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BYM10-1000-E3/97 BYM10-1000-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-200-E3/97 BYM10-200-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 200V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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BYM10-400-E3/97 BYM10-400-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-600-E3/96 BYM10-600-E3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-600-E3/97 BYM10-600-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYM10-800-E3/96 BYM10-800-E3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 800V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-800-E3/97 BYM10-800-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 800V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM11-1000-E3/97 BYM11-1000-E3/97 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM12-400-E3/96 BYM12-400-E3/96 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE STANDARD 400V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
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BYM12-50-E3/96 BYM12-50-E3/96 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM13-40-E3/97 BYM13-40-E3/97 Vishay General Semiconductor - Diodes Division bym13.pdf Description: DIODE SCHOTTKY 40V 1A GL41
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
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BYS10-35-E3/TR BYS10-35-E3/TR Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYS11-90-M3/TR BYS11-90-M3/TR Vishay General Semiconductor - Diodes Division bys11-90.pdf Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYS12-90-M3/TR BYS12-90-M3/TR Vishay General Semiconductor - Diodes Division bys12-90-m3.pdf Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYT52J-TR BYT52J-TR Vishay General Semiconductor - Diodes Division byt52.pdf Description: DIODE AVALANCHE 600V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
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BYV26DGP-E3/54 BYV26DGP-E3/54 Vishay General Semiconductor - Diodes Division byv26dgp.pdf Description: DIODE STANDARD 800V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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BYV26D-TR BYV26D-TR Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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BYV27-150-TR BYV27-150-TR Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
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BYV28-200-TR BYV28-200-TR Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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BYW32-TR BYW32-TR Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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BYWB29-200-E3/81 BYWB29-200-E3/81 Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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BYX10GP-E3/54 BYX10GP-E3/54 Vishay General Semiconductor - Diodes Division byx10gp.pdf Description: DIODE GEN PURP 1.6KV 360MA DO204
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BZD17C15P-E3-08 BZD17C15P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 15V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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BZD17C24P-E3-08 BZD17C24P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 24V 800MW DO219AB
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BZM55B9V1-TR BZM55B9V1-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 9.1V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
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50+0.43 EUR
102+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
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BZM55C9V1-TR3 BZM55C9V1-TR3 Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 9.1V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
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72+0.3 EUR
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500+0.079 EUR
1000+0.071 EUR
5000+0.07 EUR
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BZT03C150-TR BZT03C150-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 150V 1.3W SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
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BZT03C15-TR BZT03C15-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 15V 1.3W SOD57
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
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14+1.52 EUR
19+1.13 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.49 EUR
2000+0.48 EUR
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BZT03C16-TR BZT03C16-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 13VWM 22.9VC SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±5.63%
Packaging: Cut Tape (CT)
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16+1.32 EUR
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BZT03C200-TR BZT03C200-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 200V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6%
Packaging: Cut Tape (CT)
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BZT03C56-TR BZT03C56-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 47VWM 78.6VC SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
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19+1.15 EUR
22+0.99 EUR
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2000+0.43 EUR
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BZT52B20-G3-08 BZT52B20-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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38+0.57 EUR
62+0.35 EUR
100+0.21 EUR
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BZT52B2V4-E3-18 BZT52B2V4-E3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 2.4V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
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26+0.82 EUR
42+0.5 EUR
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500+0.24 EUR
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2000+0.19 EUR
5000+0.17 EUR
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BZT52B5V1-E3-18 BZT52B5V1-E3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 5.1V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
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26+0.82 EUR
42+0.51 EUR
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5000+0.17 EUR
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BZT52B5V1-HE3-08 BZT52B5V1-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 5.1V 410MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BZT52C10-E3-18 BZT52C10-E3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 10V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
auf Bestellung 7807 Stücke:
Lieferzeit 10-14 Tag (e)
125+0.17 EUR
182+0.12 EUR
370+0.057 EUR
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BZT52C10-HE3-08 BZT52C10-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 10V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.42 EUR
83+0.25 EUR
133+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
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BZT52C18-HE3-08 BZT52C18-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 18V 410MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 410 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZT52C24-E3-08 BZT52C24-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 24V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
auf Bestellung 11291 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.82 EUR
41+0.51 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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BZT52C2V4-E3-18 BZT52C2V4-E3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 2.4V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
auf Bestellung 1834 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.82 EUR
41+0.51 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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BZT52C33-E3-08 BZT52C33-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 33V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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38+0.57 EUR
46+0.46 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.11 EUR
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BZT52C33-E3-18 BZT52C33-E3-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 33V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZT52C36-E3-18 BZT52C36-E3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 36V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 87 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 741 Stücke:
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50+0.42 EUR
84+0.25 EUR
135+0.15 EUR
500+0.11 EUR
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BZT52C3V3-G3-08 BZT52C3V3-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
auf Bestellung 19845 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
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BZT52C9V1-HE3-18 BZT52C9V1-HE3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 9.1V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZT55B12-GS08 BZT55B12-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 12V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 3175 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
50+0.43 EUR
101+0.21 EUR
500+0.18 EUR
1000+0.12 EUR
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BZT55B8V2-GS08 BZT55B8V2-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 8.2V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1483 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.33 EUR
95+0.23 EUR
208+0.1 EUR
500+0.099 EUR
1000+0.098 EUR
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BZT55C12-GS18 BZT55C12-GS18 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 12V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 611 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
125+0.17 EUR
259+0.081 EUR
500+0.08 EUR
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BZW04-33B-E3/54 BZW04-33B-E3/54 Vishay General Semiconductor - Diodes Division bzw04.pdf Description: TVS DIODE 33.3VWM 53.9V DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 7.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 13216 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.2 EUR
16+1.38 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.58 EUR
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BZX384B13-E3-08 BZX384B13-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 13V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 11842 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.27 EUR
113+0.19 EUR
237+0.088 EUR
500+0.087 EUR
1000+0.084 EUR
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BZX384B13-E3-18 BZX384B13-E3-18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 13V 200MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZX384B15-E3-08 BZX384B15-E3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 15V 200MW SOD323
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
auf Bestellung 12885 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
104+0.2 EUR
236+0.089 EUR
500+0.087 EUR
1000+0.084 EUR
Mindestbestellmenge: 72 Stücke
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BZX384B15-G3-18 BZX384B15-G3-18 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: DIODE ZENER 15V 200MW SOD323
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
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BZX384B2V4-HE3-08 BZX384B2V4-HE3-08 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 2.4V 200MW SOD323
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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BZX384B3V6-E3-08 BZX384B3V6-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 3.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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BZX384B3V6-G3-08 BZX384B3V6-G3-08 Vishay General Semiconductor - Diodes Division bzx384g.pdf Description: DIODE ZENER 3.6V 200MW SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
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BZX384B3V9-E3-08 BZX384B3V9-E3-08 Vishay General Semiconductor - Diodes Division PdfFile_148489.pdf Description: DIODE ZENER 3.9V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
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BZX384B4V3-E3-18 BZX384B4V3-E3-18 Vishay General Semiconductor - Diodes Division bzx384.pdf Description: DIODE ZENER 4.3V 200MW SOD323
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Voltage - Zener (Nom) (Vz): 4.3 V
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BZX384B4V7-HE3-08 BZX384B4V7-HE3-08 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.7V 200MW SOD323
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Power - Max: 200 mW
Grade: Automotive
Supplier Device Package: SOD-323
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BYM07-400-E3/83 egl34.pdf
BYM07-400-E3/83
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 500MA DO213AA
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
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BYM10-1000-E3/97 bym10-xxx.pdf
BYM10-1000-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-200-E3/97 bym10-xxx.pdf
BYM10-200-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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BYM10-400-E3/97 bym10-xxx.pdf
BYM10-400-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYM10-600-E3/96 bym10-xxx.pdf
BYM10-600-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-600-E3/97 bym10-xxx.pdf
BYM10-600-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYM10-800-E3/96 bym10-xxx.pdf
BYM10-800-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-800-E3/97 bym10-xxx.pdf
BYM10-800-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM11-1000-E3/97 bym1150.pdf
BYM11-1000-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 9900 Stücke:
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BYM12-400-E3/96 egl41.pdf
BYM12-400-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
auf Bestellung 6695 Stücke:
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BYM12-50-E3/96 egl41.pdf
BYM12-50-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM13-40-E3/97 bym13.pdf
BYM13-40-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A GL41
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
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BYS10-35-E3/TR bys10.pdf
BYS10-35-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYS11-90-M3/TR bys11-90.pdf
BYS11-90-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYS12-90-M3/TR bys12-90-m3.pdf
BYS12-90-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 7971 Stücke:
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BYT52J-TR byt52.pdf
BYT52J-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYV26DGP-E3/54 byv26dgp.pdf
BYV26DGP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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BYV26D-TR byv26.pdf
BYV26D-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 13522 Stücke:
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5+4.63 EUR
10+2.98 EUR
100+2.02 EUR
500+1.62 EUR
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BYV27-150-TR byv27.pdf
BYV27-150-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
auf Bestellung 16161 Stücke:
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AnzahlPrivatkunde
5+5.21 EUR
10+3.37 EUR
100+2.31 EUR
500+1.86 EUR
1000+1.73 EUR
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BYV28-200-TR byv2850.pdf
BYV28-200-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 14444 Stücke:
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3+7.9 EUR
10+5.19 EUR
100+3.64 EUR
500+3.02 EUR
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BYW32-TR byw32.pdf
BYW32-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 32281 Stücke:
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AnzahlPrivatkunde
5+4.33 EUR
10+2.77 EUR
100+1.89 EUR
500+1.51 EUR
1000+1.38 EUR
2000+1.34 EUR
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BYWB29-200-E3/81 byw29200.pdf
BYWB29-200-E3/81
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 954 Stücke:
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8+2.87 EUR
10+2.57 EUR
100+2.01 EUR
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BYX10GP-E3/54 byx10gp.pdf
BYX10GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 360MA DO204
auf Bestellung 8086 Stücke:
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BZD17C15P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C15P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 31489 Stücke:
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35+0.61 EUR
52+0.4 EUR
111+0.19 EUR
1000+0.18 EUR
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BZD17C24P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C24P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
Produkt ist nicht verfügbar
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BZM55B9V1-TR bzm55.pdf
BZM55B9V1-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 14002 Stücke:
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AnzahlPrivatkunde
34+0.63 EUR
50+0.43 EUR
102+0.2 EUR
500+0.17 EUR
1000+0.12 EUR
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BZM55C9V1-TR3 bzm55.pdf
BZM55C9V1-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 8726 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
110+0.19 EUR
254+0.082 EUR
500+0.079 EUR
1000+0.071 EUR
5000+0.07 EUR
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BZT03C150-TR bzt03.pdf
BZT03C150-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1.3W SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
auf Bestellung 18006 Stücke:
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17+1.24 EUR
19+1.17 EUR
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BZT03C15-TR bzt03.pdf
BZT03C15-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.3W SOD57
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
auf Bestellung 30542 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
19+1.13 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.49 EUR
2000+0.48 EUR
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BZT03C16-TR bzt03.pdf
BZT03C16-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 22.9VC SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±5.63%
Packaging: Cut Tape (CT)
auf Bestellung 14526 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.51 EUR
16+1.32 EUR
100+1.01 EUR
500+0.8 EUR
1000+0.64 EUR
2000+0.62 EUR
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BZT03C200-TR bzt03.pdf
BZT03C200-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6%
Packaging: Cut Tape (CT)
auf Bestellung 27885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
30+0.73 EUR
100+0.63 EUR
500+0.51 EUR
1000+0.44 EUR
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BZT03C56-TR bzt03.pdf
BZT03C56-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 47VWM 78.6VC SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
auf Bestellung 7346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
22+0.99 EUR
100+0.68 EUR
500+0.57 EUR
1000+0.49 EUR
2000+0.43 EUR
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BZT52B20-G3-08 bzt52-g.pdf
BZT52B20-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
62+0.35 EUR
100+0.21 EUR
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BZT52B2V4-E3-18 bzt52.pdf
BZT52B2V4-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
auf Bestellung 8192 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
42+0.5 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
5000+0.17 EUR
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BZT52B5V1-E3-18 bzt52.pdf
BZT52B5V1-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
auf Bestellung 8551 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
42+0.51 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
5000+0.17 EUR
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BZT52B5V1-HE3-08 bzt52.pdf
BZT52B5V1-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 410MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BZT52C10-E3-18 bzt52.pdf
BZT52C10-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
auf Bestellung 7807 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
125+0.17 EUR
182+0.12 EUR
370+0.057 EUR
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BZT52C10-HE3-08 bzt52.pdf
BZT52C10-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
83+0.25 EUR
133+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
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BZT52C18-HE3-08 bzt52.pdf
BZT52C18-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 410MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 410 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZT52C24-E3-08 bzt52.pdf
BZT52C24-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
auf Bestellung 11291 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
41+0.51 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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BZT52C2V4-E3-18 bzt52.pdf
BZT52C2V4-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
auf Bestellung 1834 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
41+0.51 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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BZT52C33-E3-08 bzt52_series.pdf
BZT52C33-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
46+0.46 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.11 EUR
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BZT52C33-E3-18 bzt52_series.pdf
BZT52C33-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZT52C36-E3-18 bzt52.pdf
BZT52C36-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 87 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 741 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
84+0.25 EUR
135+0.15 EUR
500+0.11 EUR
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BZT52C3V3-G3-08 bzt52-g.pdf
BZT52C3V3-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
auf Bestellung 19845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
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BZT52C9V1-HE3-18 bzt52.pdf
BZT52C9V1-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BZT55B12-GS08 bzt55.pdf
BZT55B12-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD80
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 3175 Stücke:
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AnzahlPrivatkunde
34+0.63 EUR
50+0.43 EUR
101+0.21 EUR
500+0.18 EUR
1000+0.12 EUR
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BZT55B8V2-GS08 bzt55.pdf
BZT55B8V2-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1483 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
95+0.23 EUR
208+0.1 EUR
500+0.099 EUR
1000+0.098 EUR
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BZT55C12-GS18 bzt55.pdf
BZT55C12-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 QuadroMELF
Impedance (Max) (Zzt): 20 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 611 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
125+0.17 EUR
259+0.081 EUR
500+0.08 EUR
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BZW04-33B-E3/54 bzw04.pdf
BZW04-33B-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO204AL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 53.9V
Voltage - Breakdown (Min): 37.1V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 33.3V
Current - Peak Pulse (10/1000µs): 7.4A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 13216 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.2 EUR
16+1.38 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.58 EUR
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BZX384B13-E3-08 PdfFile_148489.pdf
BZX384B13-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 11842 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
113+0.19 EUR
237+0.088 EUR
500+0.087 EUR
1000+0.084 EUR
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BZX384B13-E3-18 bzx384.pdf
BZX384B13-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 200MW SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZX384B15-E3-08 bzx384.pdf
BZX384B15-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 200MW SOD323
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
auf Bestellung 12885 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
104+0.2 EUR
236+0.089 EUR
500+0.087 EUR
1000+0.084 EUR
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BZX384B15-G3-18 bzx384g.pdf
BZX384B15-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 200MW SOD323
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BZX384B2V4-HE3-08 bzx384.pdf
BZX384B2V4-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 200MW SOD323
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 100 Ohms
Voltage - Zener (Nom) (Vz): 2.4 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 14985 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
39+0.55 EUR
58+0.37 EUR
118+0.18 EUR
500+0.15 EUR
1000+0.1 EUR
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BZX384B3V6-E3-08 PdfFile_148489.pdf
BZX384B3V6-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 26499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
77+0.27 EUR
115+0.18 EUR
237+0.088 EUR
500+0.084 EUR
1000+0.081 EUR
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BZX384B3V6-G3-08 bzx384g.pdf
BZX384B3V6-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 200MW SOD323
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Power - Max: 200 mW
Part Status: Active
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
auf Bestellung 26018 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
59+0.36 EUR
89+0.24 EUR
187+0.11 EUR
500+0.11 EUR
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BZX384B3V9-E3-08 PdfFile_148489.pdf
BZX384B3V9-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 200MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
auf Bestellung 11989 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
45+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
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BZX384B4V3-E3-18 bzx384.pdf
BZX384B4V3-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 200MW SOD323
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Power - Max: 200 mW
Supplier Device Package: SOD-323
Impedance (Max) (Zzt): 90 Ohms
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Voltage - Zener (Nom) (Vz): 4.3 V
auf Bestellung 7345 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
100+0.21 EUR
213+0.099 EUR
500+0.09 EUR
1000+0.082 EUR
2000+0.08 EUR
5000+0.076 EUR
Mindestbestellmenge: 72 Stücke
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BZX384B4V7-HE3-08
BZX384B4V7-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 200MW SOD323
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Power - Max: 200 mW
Grade: Automotive
Supplier Device Package: SOD-323
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
81+0.26 EUR
131+0.17 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 50 Stücke
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