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BY252P-E3/54 BY252P-E3/54 Vishay General Semiconductor - Diodes Division by251p.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BY253P-E3/54 BY253P-E3/54 Vishay General Semiconductor - Diodes Division by251p.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
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BY254P-E3/54 BY254P-E3/54 Vishay General Semiconductor - Diodes Division by251p.pdf Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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BY268TR BY268TR Vishay General Semiconductor - Diodes Division by268.pdf Description: DIODE STANDARD 1400V 800MA SOD57
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
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BY520-16E-E3/54 BY520-16E-E3/54 Vishay General Semiconductor - Diodes Division by5201416.pdf Description: DIODE GEN PURP 1.6KV 500MA DO204
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BYG10G-E3/TR3 BYG10G-E3/TR3 Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 400V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYG10K-E3/TR3 BYG10K-E3/TR3 Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 800V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYG10M-E3/TR3 BYG10M-E3/TR3 Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYG20D-E3/TR3 BYG20D-E3/TR3 Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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BYG20G-E3/TR3 BYG20G-E3/TR3 Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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BYG20J-E3/TR3 BYG20J-E3/TR3 Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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BYG22A-E3/TR BYG22A-E3/TR Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYG22DHE3_A/H BYG22DHE3_A/H Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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BYM07-100-E3/98 BYM07-100-E3/98 Vishay General Semiconductor - Diodes Division egl34.pdf Description: DIODE STD 100V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
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BYM07-150-E3/98 BYM07-150-E3/98 Vishay General Semiconductor - Diodes Division egl34.pdf Description: DIODE GP 150V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYM07-200-E3/83 BYM07-200-E3/83 Vishay General Semiconductor - Diodes Division egl34.pdf Description: DIODE GP 200V 500MA DO213AA
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Produkt ist nicht verfügbar
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BYM07-200-E3/98 BYM07-200-E3/98 Vishay General Semiconductor - Diodes Division egl34.pdf Description: DIODE STD 200V 500MA DO213AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
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BYM07-400-E3/83 BYM07-400-E3/83 Vishay General Semiconductor - Diodes Division egl34.pdf Description: DIODE GP 400V 500MA DO213AA
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
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BYM10-1000-E3/97 BYM10-1000-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-200-E3/97 BYM10-200-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 200V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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BYM10-400-E3/97 BYM10-400-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 400V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-600-E3/96 BYM10-600-E3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-600-E3/97 BYM10-600-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE GEN PURP 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYM10-800-E3/96 BYM10-800-E3/96 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 800V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM10-800-E3/97 BYM10-800-E3/97 Vishay General Semiconductor - Diodes Division bym10-xxx.pdf Description: DIODE AVALANCHE 800V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM11-1000-E3/97 BYM11-1000-E3/97 Vishay General Semiconductor - Diodes Division bym1150.pdf Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM12-400-E3/96 BYM12-400-E3/96 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE STANDARD 400V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
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BYM12-50-E3/96 BYM12-50-E3/96 Vishay General Semiconductor - Diodes Division egl41.pdf Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
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BYM13-40-E3/97 BYM13-40-E3/97 Vishay General Semiconductor - Diodes Division bym13.pdf Description: DIODE SCHOTTKY 40V 1A GL41
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
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BYS10-35-E3/TR BYS10-35-E3/TR Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYS11-90-M3/TR BYS11-90-M3/TR Vishay General Semiconductor - Diodes Division bys11-90.pdf Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYS12-90-M3/TR BYS12-90-M3/TR Vishay General Semiconductor - Diodes Division bys12-90-m3.pdf Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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BYT52J-TR BYT52J-TR Vishay General Semiconductor - Diodes Division byt52.pdf Description: DIODE AVALANCHE 600V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYV26DGP-E3/54 BYV26DGP-E3/54 Vishay General Semiconductor - Diodes Division byv26dgp.pdf Description: DIODE STANDARD 800V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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BYV26D-TR BYV26D-TR Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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BYV27-150-TR BYV27-150-TR Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
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BYV28-200-TR BYV28-200-TR Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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BYW32-TR BYW32-TR Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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BYWB29-200-E3/81 BYWB29-200-E3/81 Vishay General Semiconductor - Diodes Division byw29200.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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BYX10GP-E3/54 BYX10GP-E3/54 Vishay General Semiconductor - Diodes Division byx10gp.pdf Description: DIODE GEN PURP 1.6KV 360MA DO204
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BZD17C15P-E3-08 BZD17C15P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 15V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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BZD17C24P-E3-08 BZD17C24P-E3-08 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 24V 800MW DO219AB
Produkt ist nicht verfügbar
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BZM55B9V1-TR BZM55B9V1-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 9.1V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
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BZM55C9V1-TR3 BZM55C9V1-TR3 Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 9.1V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
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BZT03C150-TR BZT03C150-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 150V 1.3W SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
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BZT03C15-TR BZT03C15-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 15V 1.3W SOD57
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
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BZT03C16-TR BZT03C16-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 13VWM 22.9VC SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±5.63%
Packaging: Cut Tape (CT)
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BZT03C200-TR BZT03C200-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 200V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6%
Packaging: Cut Tape (CT)
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BZT03C56-TR BZT03C56-TR Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 47VWM 78.6VC SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
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BZT52B20-G3-08 BZT52B20-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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BZT52B2V4-E3-18 BZT52B2V4-E3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 2.4V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
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BZT52B5V1-E3-18 BZT52B5V1-E3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 5.1V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
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26+0.69 EUR
42+0.42 EUR
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500+0.2 EUR
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5000+0.14 EUR
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BZT52B5V1-HE3-08 BZT52B5V1-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 5.1V 410MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
auf Bestellung 37 Stücke:
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BZT52C10-E3-18 BZT52C10-E3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 10V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
auf Bestellung 7807 Stücke:
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BZT52C10-HE3-08 BZT52C10-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 10V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1681 Stücke:
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50+0.35 EUR
83+0.21 EUR
133+0.13 EUR
500+0.097 EUR
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BZT52C18-HE3-08 BZT52C18-HE3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 18V 410MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 410 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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81+0.22 EUR
131+0.14 EUR
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BZT52C24-E3-08 BZT52C24-E3-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 24V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
auf Bestellung 11291 Stücke:
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27+0.67 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
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BZT52C2V4-E3-18 BZT52C2V4-E3-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 2.4V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
auf Bestellung 7833 Stücke:
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77+0.23 EUR
113+0.16 EUR
262+0.067 EUR
500+0.064 EUR
1000+0.058 EUR
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BZT52C33-E3-08 BZT52C33-E3-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 33V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke:
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46+0.39 EUR
100+0.21 EUR
500+0.14 EUR
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BZT52C33-E3-18 BZT52C33-E3-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 33V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BY252P-E3/54 by251p.pdf
BY252P-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 6691 Stücke:
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Anzahl Preis
8+2.24 EUR
13+1.41 EUR
100+0.93 EUR
500+0.73 EUR
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BY253P-E3/54 by251p.pdf
BY253P-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
auf Bestellung 5411 Stücke:
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Anzahl Preis
24+0.74 EUR
28+0.64 EUR
100+0.48 EUR
500+0.37 EUR
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BY254P-E3/54 by251p.pdf
BY254P-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 5105 Stücke:
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Anzahl Preis
8+2.24 EUR
13+1.41 EUR
100+0.93 EUR
500+0.73 EUR
Mindestbestellmenge: 8
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BY268TR by268.pdf
BY268TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1400V 800MA SOD57
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 800mA
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Voltage - DC Reverse (Vr) (Max): 1400 V
Part Status: Active
auf Bestellung 17846 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
29+0.61 EUR
100+0.53 EUR
500+0.46 EUR
1000+0.4 EUR
Mindestbestellmenge: 22
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BY520-16E-E3/54 by5201416.pdf
BY520-16E-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 500MA DO204
auf Bestellung 5325 Stücke:
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BYG10G-E3/TR3 byg10.pdf
BYG10G-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
36+0.5 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
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BYG10K-E3/TR3 byg10.pdf
BYG10K-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 800V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 9810 Stücke:
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Anzahl Preis
28+0.63 EUR
41+0.43 EUR
100+0.26 EUR
500+0.22 EUR
1000+0.2 EUR
2000+0.18 EUR
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BYG10M-E3/TR3 byg10.pdf
BYG10M-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 11983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
37+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 23
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BYG20D-E3/TR3 byg20d.pdf
BYG20D-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 200V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 3442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
2000+0.29 EUR
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BYG20G-E3/TR3 byg20d.pdf
BYG20G-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 400V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
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BYG20J-E3/TR3 byg20d.pdf
BYG20J-E3/TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 7163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
2000+0.29 EUR
Mindestbestellmenge: 16
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BYG22A-E3/TR byg22a.pdf
BYG22A-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 50V 2A DO214AC
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 4665 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
29+0.61 EUR
100+0.41 EUR
500+0.32 EUR
Mindestbestellmenge: 20
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BYG22DHE3_A/H byg22a.pdf
BYG22DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
64+0.28 EUR
Mindestbestellmenge: 44
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BYM07-100-E3/98 egl34.pdf
BYM07-100-E3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 1024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
32+0.57 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.29 EUR
Mindestbestellmenge: 21
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BYM07-150-E3/98 egl34.pdf
BYM07-150-E3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 150V 500MA DO213AA
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYM07-200-E3/83 egl34.pdf
BYM07-200-E3/83
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 500MA DO213AA
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Produkt ist nicht verfügbar
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BYM07-200-E3/98 egl34.pdf
BYM07-200-E3/98
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 500MA DO213AA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
auf Bestellung 1963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
32+0.56 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.3 EUR
Mindestbestellmenge: 20
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BYM07-400-E3/83 egl34.pdf
BYM07-400-E3/83
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 500MA DO213AA
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA (GL34)
Current - Average Rectified (Io): 500mA
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Technology: Standard
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
29+0.62 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.28 EUR
2000+0.26 EUR
Mindestbestellmenge: 25
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BYM10-1000-E3/97 bym10-xxx.pdf
BYM10-1000-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 6151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
42+0.43 EUR
100+0.32 EUR
500+0.26 EUR
1000+0.22 EUR
2000+0.21 EUR
Mindestbestellmenge: 26
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BYM10-200-E3/97 bym10-xxx.pdf
BYM10-200-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 25014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.87 EUR
33+0.54 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
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BYM10-400-E3/97 bym10-xxx.pdf
BYM10-400-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYM10-600-E3/96 bym10-xxx.pdf
BYM10-600-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 4771 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
40+0.44 EUR
100+0.27 EUR
500+0.23 EUR
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BYM10-600-E3/97 bym10-xxx.pdf
BYM10-600-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYM10-800-E3/96 bym10-xxx.pdf
BYM10-800-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 281 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
43+0.41 EUR
100+0.22 EUR
Mindestbestellmenge: 27
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BYM10-800-E3/97 bym10-xxx.pdf
BYM10-800-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO213AB
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 9738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
38+0.47 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.22 EUR
2000+0.21 EUR
Mindestbestellmenge: 26
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BYM11-1000-E3/97 bym1150.pdf
BYM11-1000-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 9900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
30+0.59 EUR
100+0.35 EUR
500+0.33 EUR
1000+0.22 EUR
2000+0.21 EUR
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BYM12-400-E3/96 egl41.pdf
BYM12-400-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO213AB
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 14pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
auf Bestellung 6695 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
32+0.55 EUR
100+0.44 EUR
500+0.33 EUR
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BYM12-50-E3/96 egl41.pdf
BYM12-50-E3/96
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1A DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AB
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Packaging: Cut Tape (CT)
auf Bestellung 722 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
32+0.56 EUR
100+0.38 EUR
500+0.29 EUR
Mindestbestellmenge: 21
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BYM13-40-E3/97 bym13.pdf
BYM13-40-E3/97
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A GL41
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-213AB (GL41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Packaging: Cut Tape (CT)
auf Bestellung 9327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
31+0.59 EUR
100+0.41 EUR
500+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 26
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BYS10-35-E3/TR bys10.pdf
BYS10-35-E3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 35 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 2283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
36+0.5 EUR
100+0.25 EUR
500+0.22 EUR
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BYS11-90-M3/TR bys11-90.pdf
BYS11-90-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 4506 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
53+0.34 EUR
100+0.2 EUR
500+0.19 EUR
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BYS12-90-M3/TR bys12-90-m3.pdf
BYS12-90-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AC
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 7971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
75+0.24 EUR
100+0.22 EUR
500+0.19 EUR
Mindestbestellmenge: 53
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BYT52J-TR byt52.pdf
BYT52J-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BYV26DGP-E3/54 byv26dgp.pdf
BYV26DGP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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BYV26D-TR byv26.pdf
BYV26D-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 13722 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.42 EUR
100+1.65 EUR
500+1.32 EUR
1000+1.21 EUR
2000+1.19 EUR
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BYV27-150-TR byv27.pdf
BYV27-150-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
auf Bestellung 17502 Stücke:
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Anzahl Preis
13+1.41 EUR
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BYV28-200-TR byv2850.pdf
BYV28-200-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 1953 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
Mindestbestellmenge: 8
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BYW32-TR byw32.pdf
BYW32-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 32281 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.33 EUR
100+1.59 EUR
500+1.27 EUR
1000+1.16 EUR
2000+1.13 EUR
Mindestbestellmenge: 5
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BYWB29-200-E3/81 byw29200.pdf
BYWB29-200-E3/81
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+2.16 EUR
100+1.69 EUR
Mindestbestellmenge: 8
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BYX10GP-E3/54 byx10gp.pdf
BYX10GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.6KV 360MA DO204
auf Bestellung 8086 Stücke:
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BZD17C15P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C15P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 31489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
52+0.34 EUR
111+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 35
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BZD17C24P-E3-08 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C24P-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 800MW DO219AB
Produkt ist nicht verfügbar
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BZM55B9V1-TR bzm55.pdf
BZM55B9V1-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 14002 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.36 EUR
102+0.17 EUR
500+0.14 EUR
1000+0.1 EUR
Mindestbestellmenge: 34
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BZM55C9V1-TR3 bzm55.pdf
BZM55C9V1-TR3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW MICROMELF
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: MicroMELF
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
auf Bestellung 8726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
110+0.16 EUR
254+0.069 EUR
500+0.066 EUR
1000+0.06 EUR
5000+0.059 EUR
Mindestbestellmenge: 72
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BZT03C150-TR bzt03.pdf
BZT03C150-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1.3W SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
auf Bestellung 18006 Stücke:
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Anzahl Preis
17+1.04 EUR
19+0.98 EUR
Mindestbestellmenge: 17
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BZT03C15-TR bzt03.pdf
BZT03C15-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.3W SOD57
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
auf Bestellung 30542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
19+0.95 EUR
100+0.66 EUR
500+0.52 EUR
1000+0.41 EUR
2000+0.4 EUR
Mindestbestellmenge: 14
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BZT03C16-TR bzt03.pdf
BZT03C16-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 22.9VC SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±5.63%
Packaging: Cut Tape (CT)
auf Bestellung 14526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
16+1.11 EUR
100+0.85 EUR
500+0.67 EUR
1000+0.54 EUR
2000+0.52 EUR
Mindestbestellmenge: 14
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BZT03C200-TR bzt03.pdf
BZT03C200-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 200V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6%
Packaging: Cut Tape (CT)
auf Bestellung 27885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
30+0.61 EUR
100+0.53 EUR
500+0.43 EUR
1000+0.37 EUR
Mindestbestellmenge: 19
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BZT03C56-TR bzt03.pdf
BZT03C56-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 47VWM 78.6VC SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 56 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±7.14%
Packaging: Cut Tape (CT)
auf Bestellung 7346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
22+0.83 EUR
100+0.57 EUR
500+0.48 EUR
1000+0.41 EUR
2000+0.36 EUR
Mindestbestellmenge: 19
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BZT52B20-G3-08 bzt52-g.pdf
BZT52B20-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
62+0.29 EUR
100+0.18 EUR
Mindestbestellmenge: 38
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BZT52B2V4-E3-18 bzt52.pdf
BZT52B2V4-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
auf Bestellung 8192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
42+0.42 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.14 EUR
Mindestbestellmenge: 26
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BZT52B5V1-E3-18 bzt52.pdf
BZT52B5V1-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
auf Bestellung 8551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
42+0.42 EUR
100+0.27 EUR
500+0.2 EUR
1000+0.18 EUR
2000+0.16 EUR
5000+0.14 EUR
Mindestbestellmenge: 26
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BZT52B5V1-HE3-08 bzt52.pdf
BZT52B5V1-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 410MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Power - Max: 410 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
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BZT52C10-E3-18 bzt52.pdf
BZT52C10-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
auf Bestellung 7807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+0.14 EUR
182+0.097 EUR
370+0.048 EUR
Mindestbestellmenge: 125
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BZT52C10-HE3-08 bzt52.pdf
BZT52C10-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-123
Part Status: Last Time Buy
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
83+0.21 EUR
133+0.13 EUR
500+0.097 EUR
1000+0.086 EUR
Mindestbestellmenge: 50
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BZT52C18-HE3-08 bzt52.pdf
BZT52C18-HE3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 410MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Power - Max: 410 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 18 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
81+0.22 EUR
131+0.14 EUR
500+0.099 EUR
Mindestbestellmenge: 50
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BZT52C24-E3-08 bzt52.pdf
BZT52C24-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
auf Bestellung 11291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
43+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.17 EUR
Mindestbestellmenge: 27
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BZT52C2V4-E3-18 bzt52.pdf
BZT52C2V4-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 410 mW
auf Bestellung 7833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
113+0.16 EUR
262+0.067 EUR
500+0.064 EUR
1000+0.058 EUR
2000+0.057 EUR
Mindestbestellmenge: 77
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BZT52C33-E3-08 bzt52_series.pdf
BZT52C33-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
46+0.39 EUR
100+0.21 EUR
500+0.14 EUR
1000+0.092 EUR
Mindestbestellmenge: 38
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BZT52C33-E3-18 bzt52_series.pdf
BZT52C33-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 410MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Cut Tape (CT)
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