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RMPG06JHE3_A/54 RMPG06JHE3_A/54 Vishay General Semiconductor - Diodes Division rmpg06.pdf Description: DIODE STANDARD 600V 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 40751 Stücke:
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24+0.76 EUR
35+0.51 EUR
100+0.31 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.21 EUR
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VF20100S-E3/4W VF20100S-E3/4W Vishay General Semiconductor - Diodes Division v20100s.pdf Description: DIODE SCHOTTKY 100V 20A ITO220AB
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VS-6EVX06-M3/I VS-6EVX06-M3/I Vishay General Semiconductor - Diodes Division vs-6evx06-m3.pdf Description: DIODE GEN PURPOSE 600V SLIMDPAK
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VS-6EVX06-M3/I VS-6EVX06-M3/I Vishay General Semiconductor - Diodes Division vs-6evx06-m3.pdf Description: DIODE GEN PURPOSE 600V SLIMDPAK
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MBRB1045HE3_A/P MBRB1045HE3_A/P Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
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MBRB1045HE3_B/I MBRB1045HE3_B/I Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
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VS-MBRB1045HM3 VS-MBRB1045HM3 Vishay General Semiconductor - Diodes Division vs-mbrb1035hm3vs-mbrb1045hm3.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
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VS-MBRB1045TRLHM3 VS-MBRB1045TRLHM3 Vishay General Semiconductor - Diodes Division vs-mbrb1035hm3vs-mbrb1045hm3.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
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TLZ5V1B-GS08 TLZ5V1B-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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TLZ5V1B-GS08 TLZ5V1B-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 5424 Stücke:
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TLZ10C-GS08 TLZ10C-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 10V 500MW SOD80
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TLZ10C-GS08 TLZ10C-GS08 Vishay General Semiconductor - Diodes Division tlz.pdf Description: DIODE ZENER 10V 500MW SOD80
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BZD27C15P-M3-18 BZD27C15P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
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BZD27C15P-M3-18 BZD27C15P-M3-18 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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RS2GHE3_A/H RS2GHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 400V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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RS2GHE3_A/H RS2GHE3_A/H Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE STANDARD 400V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
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V35PW60-M3/I V35PW60-M3/I Vishay General Semiconductor - Diodes Division v35pw60.pdf Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3600pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 600 V
auf Bestellung 13500 Stücke:
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V35PW60-M3/I V35PW60-M3/I Vishay General Semiconductor - Diodes Division v35pw60.pdf Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3600pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 600 V
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VS-1EQH01-M3/H VS-1EQH01-M3/H Vishay General Semiconductor - Diodes Division vs-1eqh01-m3.pdf Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH01-M3/H VS-1EQH01-M3/H Vishay General Semiconductor - Diodes Division vs-1eqh01-m3.pdf Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH02HM3/H VS-1EQH02HM3/H Vishay General Semiconductor - Diodes Division vs-1eqh02hm3.pdf Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH02HM3/H VS-1EQH02HM3/H Vishay General Semiconductor - Diodes Division vs-1eqh02hm3.pdf Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH01HM3/H VS-1EQH01HM3/H Vishay General Semiconductor - Diodes Division vs-1eqh02hm3.pdf Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH01HM3/H VS-1EQH01HM3/H Vishay General Semiconductor - Diodes Division vs-1eqh02hm3.pdf Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH02-M3/H VS-1EQH02-M3/H Vishay General Semiconductor - Diodes Division vs-1eqh01-m3.pdf Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH02-M3/H VS-1EQH02-M3/H Vishay General Semiconductor - Diodes Division vs-1eqh01-m3.pdf Description: ULTRAFAST RECTIFIER 1A DO-219AD
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1N5232C-TR 1N5232C-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 5.6V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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1N5232C-TR 1N5232C-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 5.6V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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VB40100C-E3/8W VB40100C-E3/8W Vishay General Semiconductor - Diodes Division v40100c.pdf Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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PLZ9V1C-HG3_A/H PLZ9V1C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 9.07V 960MW DO219AC
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PLZ9V1C-HG3_A/H PLZ9V1C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 9.07V 960MW DO219AC
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SBLB10L25HE3_A/P SBLB10L25HE3_A/P Vishay General Semiconductor - Diodes Division sbl10l25.pdf Description: DIODE SCHOTTKY 25V 10A TO263AB
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SBLB10L25HE3_A/I SBLB10L25HE3_A/I Vishay General Semiconductor - Diodes Division sbl10l25.pdf Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
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SBLB10L25HE3/45 SBLB10L25HE3/45 Vishay General Semiconductor - Diodes Division SBL(F,B)10L25_Rev_9-AUG-13.pdf Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Produkt ist nicht verfügbar
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V12PM12-M3/86A V12PM12-M3/86A Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
auf Bestellung 7500 Stücke:
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V12PM12-M3/86A V12PM12-M3/86A Vishay General Semiconductor - Diodes Division v12p12.pdf Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
auf Bestellung 8631 Stücke:
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TZMB2V4-GS08 TZMB2V4-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 2.4V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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TZMB2V4-GS08 TZMB2V4-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 2.4V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
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BZM55B2V4-TR BZM55B2V4-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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BZM55B2V4-TR BZM55B2V4-TR Vishay General Semiconductor - Diodes Division bzm55.pdf Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
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GBU4GL-6420E3/51 Vishay General Semiconductor - Diodes Division GBU4x_ProdBundle_Aug5,2015.pdf Description: BRIDGE RECT 1PHASE 400V 3A GBU
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GBU4GL-6420M3/51 Vishay General Semiconductor - Diodes Division GBU4x-M3_ProdBundle_Aug5,2015.pdf Description: BRIDGE RECT 1PHASE 400V 3A GBU
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RS1PG-M3/84A RS1PG-M3/84A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 400V 1A DO220AA
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RS1PG-M3/84A RS1PG-M3/84A Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE GEN PURP 400V 1A DO220AA
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RS1PBHM3_A/H RS1PBHM3_A/H Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PBHM3_A/I RS1PBHM3_A/I Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PDHM3_A/H RS1PDHM3_A/H Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PGHM3_A/H RS1PGHM3_A/H Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PGHM3_A/I RS1PGHM3_A/I Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PJHM3_A/H RS1PJHM3_A/H Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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RS1PJHM3_A/I RS1PJHM3_A/I Vishay General Semiconductor - Diodes Division rs1pb.pdf Description: DIODE 100V 1A DO-220AA
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VS-50WQ04FNTR-M3 VS-50WQ04FNTR-M3 Vishay General Semiconductor - Diodes Division vs-50wq04fn.pdf Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
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VS-50WQ04FNTR-M3 VS-50WQ04FNTR-M3 Vishay General Semiconductor - Diodes Division vs-50wq04fn.pdf Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
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P6SMB39CAHE3_A/H P6SMB39CAHE3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB39CAHE3_A/I P6SMB39CAHE3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB39CAHM3_A/H P6SMB39CAHM3_A/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHE3/52 P6SMB39CAHE3/52 Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHE3/52 P6SMB39CAHE3/52 Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHM3_A/I P6SMB39CAHM3_A/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHM3/H P6SMB39CAHM3/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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RMPG06JHE3_A/54 rmpg06.pdf
RMPG06JHE3_A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 40751 Stücke:
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Anzahl Preis
24+0.76 EUR
35+0.51 EUR
100+0.31 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.21 EUR
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VF20100S-E3/4W v20100s.pdf
VF20100S-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 20A ITO220AB
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VS-6EVX06-M3/I vs-6evx06-m3.pdf
VS-6EVX06-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE 600V SLIMDPAK
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VS-6EVX06-M3/I vs-6evx06-m3.pdf
VS-6EVX06-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE 600V SLIMDPAK
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MBRB1045HE3_A/P mbr10xx.pdf
MBRB1045HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
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MBRB1045HE3_B/I mbr10xx.pdf
MBRB1045HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
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VS-MBRB1045HM3 vs-mbrb1035hm3vs-mbrb1045hm3.pdf
VS-MBRB1045HM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-MBRB1045TRLHM3 vs-mbrb1035hm3vs-mbrb1045hm3.pdf
VS-MBRB1045TRLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLZ5V1B-GS08 tlz.pdf
TLZ5V1B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 5000 Stücke:
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2500+0.073 EUR
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TLZ5V1B-GS08 tlz.pdf
TLZ5V1B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
auf Bestellung 5424 Stücke:
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Anzahl Preis
77+0.23 EUR
110+0.16 EUR
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TLZ10C-GS08 tlz.pdf
TLZ10C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW SOD80
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2500+0.079 EUR
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TLZ10C-GS08 tlz.pdf
TLZ10C-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW SOD80
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39+0.46 EUR
48+0.37 EUR
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BZD27C15P-M3-18 BZD27-M_Series.pdf
BZD27C15P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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BZD27C15P-M3-18 BZD27-M_Series.pdf
BZD27C15P-M3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Produkt ist nicht verfügbar
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RS2GHE3_A/H rs2a.pdf
RS2GHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+0.2 EUR
1500+0.19 EUR
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RS2GHE3_A/H rs2a.pdf
RS2GHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 3528 Stücke:
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Anzahl Preis
21+0.84 EUR
32+0.56 EUR
100+0.44 EUR
Mindestbestellmenge: 21
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V35PW60-M3/I v35pw60.pdf
V35PW60-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3600pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 600 V
auf Bestellung 13500 Stücke:
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V35PW60-M3/I v35pw60.pdf
V35PW60-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3600pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 600 V
auf Bestellung 19200 Stücke:
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Anzahl Preis
8+2.31 EUR
12+1.56 EUR
100+1.23 EUR
500+0.98 EUR
1000+0.9 EUR
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VS-1EQH01-M3/H vs-1eqh01-m3.pdf
VS-1EQH01-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
Produkt ist nicht verfügbar
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VS-1EQH01-M3/H vs-1eqh01-m3.pdf
VS-1EQH01-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH02HM3/H vs-1eqh02hm3.pdf
VS-1EQH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
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Anzahl Preis
4500+0.14 EUR
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VS-1EQH02HM3/H vs-1eqh02hm3.pdf
VS-1EQH02HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
32+0.56 EUR
100+0.32 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.14 EUR
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VS-1EQH01HM3/H vs-1eqh02hm3.pdf
VS-1EQH01HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH01HM3/H vs-1eqh02hm3.pdf
VS-1EQH01HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH02-M3/H vs-1eqh01-m3.pdf
VS-1EQH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
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VS-1EQH02-M3/H vs-1eqh01-m3.pdf
VS-1EQH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
auf Bestellung 204 Stücke:
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Anzahl Preis
25+0.7 EUR
31+0.59 EUR
100+0.31 EUR
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1N5232C-TR 1n5221.pdf
1N5232C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
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Anzahl Preis
10000+0.056 EUR
20000+0.051 EUR
30000+0.042 EUR
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1N5232C-TR 1n5221.pdf
1N5232C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
114+0.15 EUR
217+0.081 EUR
500+0.073 EUR
1000+0.064 EUR
2000+0.06 EUR
5000+0.049 EUR
Mindestbestellmenge: 84
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VB40100C-E3/8W v40100c.pdf
VB40100C-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
auf Bestellung 11947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.59 EUR
10+3.82 EUR
100+3.04 EUR
Mindestbestellmenge: 4
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PLZ9V1C-HG3_A/H plzseries.pdf
PLZ9V1C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.07V 960MW DO219AC
Produkt ist nicht verfügbar
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PLZ9V1C-HG3_A/H plzseries.pdf
PLZ9V1C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.07V 960MW DO219AC
auf Bestellung 47 Stücke:
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SBLB10L25HE3_A/P sbl10l25.pdf
SBLB10L25HE3_A/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Produkt ist nicht verfügbar
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SBLB10L25HE3_A/I sbl10l25.pdf
SBLB10L25HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Produkt ist nicht verfügbar
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SBLB10L25HE3/45 SBL(F,B)10L25_Rev_9-AUG-13.pdf
SBLB10L25HE3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Produkt ist nicht verfügbar
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V12PM12-M3/86A v12p12.pdf
V12PM12-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.47 EUR
Mindestbestellmenge: 1500
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V12PM12-M3/86A v12p12.pdf
V12PM12-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
auf Bestellung 8631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
16+1.12 EUR
100+0.85 EUR
500+0.66 EUR
Mindestbestellmenge: 11
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TZMB2V4-GS08 tzm.pdf
TZMB2V4-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.058 EUR
5000+0.054 EUR
Mindestbestellmenge: 2500
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TZMB2V4-GS08 tzm.pdf
TZMB2V4-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 11449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
53+0.34 EUR
108+0.16 EUR
500+0.14 EUR
1000+0.095 EUR
Mindestbestellmenge: 36
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BZM55B2V4-TR bzm55.pdf
BZM55B2V4-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.078 EUR
5000+0.071 EUR
Mindestbestellmenge: 2500
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BZM55B2V4-TR bzm55.pdf
BZM55B2V4-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
90+0.2 EUR
134+0.13 EUR
500+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 59
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GBU4GL-6420E3/51 GBU4x_ProdBundle_Aug5,2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A GBU
Produkt ist nicht verfügbar
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GBU4GL-6420M3/51 GBU4x-M3_ProdBundle_Aug5,2015.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A GBU
Produkt ist nicht verfügbar
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RS1PG-M3/84A rs1pb.pdf
RS1PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO220AA
auf Bestellung 6000 Stücke:
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RS1PG-M3/84A rs1pb.pdf
RS1PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO220AA
auf Bestellung 8950 Stücke:
Lieferzeit 10-14 Tag (e)
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RS1PBHM3_A/H rs1pb.pdf
RS1PBHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
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RS1PBHM3_A/I rs1pb.pdf
RS1PBHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
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RS1PDHM3_A/H rs1pb.pdf
RS1PDHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
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RS1PGHM3_A/H rs1pb.pdf
RS1PGHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
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RS1PGHM3_A/I rs1pb.pdf
RS1PGHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
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RS1PJHM3_A/H rs1pb.pdf
RS1PJHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
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RS1PJHM3_A/I rs1pb.pdf
RS1PJHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Produkt ist nicht verfügbar
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VS-50WQ04FNTR-M3 vs-50wq04fn.pdf
VS-50WQ04FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
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VS-50WQ04FNTR-M3 vs-50wq04fn.pdf
VS-50WQ04FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
19+0.93 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.52 EUR
Mindestbestellmenge: 13
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P6SMB39CAHE3_A/H p6smb.pdf
P6SMB39CAHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHE3_A/I p6smb.pdf
P6SMB39CAHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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P6SMB39CAHM3_A/H p6smb.pdf
P6SMB39CAHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB39CAHE3/52 p6smb.pdf
P6SMB39CAHE3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB39CAHE3/52 p6smb.pdf
P6SMB39CAHE3/52
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB39CAHM3_A/I p6smb.pdf
P6SMB39CAHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMB39CAHM3/H p6smb.pdf
P6SMB39CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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