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SAC10-E3/54 SAC10-E3/54 Vishay General Semiconductor - Diodes Division sac.pdf Description: TVS DIODE 10VWM 16.3VC DO204AC
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SAC10-E3/54 SAC10-E3/54 Vishay General Semiconductor - Diodes Division sac.pdf Description: TVS DIODE 10VWM 16.3VC DO204AC
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VS-E5PX3012L-N3 VS-E5PX3012L-N3 Vishay General Semiconductor - Diodes Division vs-e5px3012l-n3.pdf Description: DIODE FREDS 1200V 30A TO-247
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VS-E5PX3012LHN3 VS-E5PX3012LHN3 Vishay General Semiconductor - Diodes Division vs-e5px3012lhn3.pdf Description: FREDS - TO-247G5,30A,1200V, LOW
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1N5243B-T 1N5243B-T Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 13V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
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VS-C5PH6006LHN3 VS-C5PH6006LHN3 Vishay General Semiconductor - Diodes Division vs-c5ph6006lhn3.pdf Description: DIODE ARRAY GP 600V 30A TO-247AD
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 46 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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VS-C5PX6006LHN3 VS-C5PX6006LHN3 Vishay General Semiconductor - Diodes Division vs-c5px6006lhn3.pdf Description: 2X30A, 600V, "X" SERIES GEN5 FRE
Reverse Recovery Time (trr): 41 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
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VS-C5PW6006LHN3 VS-C5PW6006LHN3 Vishay General Semiconductor - Diodes Division vs-c5pw6006lhn3.pdf Description: DIODE ARRAY GP 600V 30A TO-247AD
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 39 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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VS-EPU6006L-N3 VS-EPU6006L-N3 Vishay General Semiconductor - Diodes Division vs-epu6006l-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
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VS-E5PX6006LHN3 VS-E5PX6006LHN3 Vishay General Semiconductor - Diodes Division vs-e5px6006lhn3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 46 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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VS-E5PX6006L-N3 VS-E5PX6006L-N3 Vishay General Semiconductor - Diodes Division vs-e5px6006l-n3.pdf Description: DIODE GEN PURP 600V 60A TO247AD
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 46 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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VS-E5PW6006LHN3 VS-E5PW6006LHN3 Vishay General Semiconductor - Diodes Division vs-e5pw6006lhn3.pdf Description: DIODE STANDARD 600V 60A TO247AD
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
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VS-CPU6006L-N3 VS-CPU6006L-N3 Vishay General Semiconductor - Diodes Division vs-cpu6006l-n3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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VS-C4PU6006L-N3 VS-C4PU6006L-N3 Vishay General Semiconductor - Diodes Division vs-c4pu6006l-n3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
Reverse Recovery Time (trr): 65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
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VS-CPU6006LHN3 VS-CPU6006LHN3 Vishay General Semiconductor - Diodes Division vs-cpu6006lhn3.pdf Description: DIODE GEN PURP 600V 30A TO247AD
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PLZ15C-HG3_A/H PLZ15C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 15V 500MW DO219AC
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PLZ15C-HG3_A/H PLZ15C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 15V 500MW DO219AC
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PLZ16A-HG3_A/H PLZ16A-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
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PLZ16A-HG3_A/H PLZ16A-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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PLZ16C-HG3_A/H PLZ16C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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PLZ16C-HG3_A/H PLZ16C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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PLZ24D-HG3_A/H PLZ24D-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
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PLZ24D-HG3_A/H PLZ24D-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Qualification: AEC-Q101
Grade: Automotive
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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PLZ33C-HG3_A/H PLZ33C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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PLZ33C-HG3_A/H PLZ33C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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PLZ16B-HG3_A/H PLZ16B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
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PLZ16B-HG3_A/H PLZ16B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
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VS-E5TX1506S2L-M3 VS-E5TX1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1506s2l-n3.pdf Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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800+2.21 EUR
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VS-E5TX1506S2L-M3 VS-E5TX1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1506s2l-n3.pdf Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VS-E5TH2106S2L-M3 VS-E5TH2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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800+1.9 EUR
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VS-E5TH2106S2L-M3 VS-E5TH2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1597 Stücke:
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5+4.21 EUR
10+3.92 EUR
100+2.73 EUR
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VS-E5TH1506S2L-M3 VS-E5TH1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1506s2l-m3_.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
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800+1.37 EUR
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VS-E5TH1506S2L-M3 VS-E5TH1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1506s2l-m3_.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1379 Stücke:
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7+3.25 EUR
10+2.7 EUR
100+2.15 EUR
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VS-E5TX2112S2L-M3 VS-E5TX2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
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800+1.76 EUR
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VS-E5TX2112S2L-M3 VS-E5TX2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.19 EUR
10+3.49 EUR
100+2.77 EUR
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VS-E5TX1512S2L-M3 VS-E5TX1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1512s2l-m3.pdf Description: DIODE STANDARD 1200V 15A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 96 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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VS-E5TX1512S2L-M3 VS-E5TX1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1512s2l-m3.pdf Description: DIODE STANDARD 1200V 15A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 96 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1057 Stücke:
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VS-E5TH1512S2L-M3 VS-E5TH1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1512s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
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800+1.67 EUR
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VS-E5TH1512S2L-M3 VS-E5TH1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1512s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1154 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.25 EUR
10+3.53 EUR
100+2.82 EUR
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VS-E5TH3006S2L-M3 VS-E5TH3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3006s2l-m3.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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VS-E5TH3006S2L-M3 VS-E5TH3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3006s2l-m3.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.8 EUR
10+3.27 EUR
100+2.34 EUR
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VS-E5TX3012S2L-M3 VS-E5TX3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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VS-E5TX3012S2L-M3 VS-E5TX3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.01 EUR
10+5.96 EUR
100+4.22 EUR
Mindestbestellmenge: 3 Stücke
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VS-E5TH3012S2L-M3 VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.52 EUR
Mindestbestellmenge: 800 Stücke
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VS-E5TH3012S2L-M3 VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1036 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.89 EUR
10+4.59 EUR
100+3.43 EUR
Mindestbestellmenge: 4 Stücke
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VS-E5TX3006S2L-M3 VS-E5TX3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3006s2l-m3.pdf Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.63 EUR
Mindestbestellmenge: 800 Stücke
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VS-E5TX3006S2L-M3 VS-E5TX3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3006s2l-m3.pdf Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 1591 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.38 EUR
10+4.83 EUR
100+3.38 EUR
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VS-E5TX2106S2L-M3 VS-E5TX2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.93 EUR
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VS-E5TX2106S2L-M3 VS-E5TX2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.19 EUR
10+3.94 EUR
100+2.74 EUR
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VS-E5TH2112S2L-M3 VS-E5TH2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.94 EUR
1600+1.87 EUR
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VS-E5TH2112S2L-M3 VS-E5TH2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 2139 Stücke:
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4+6.07 EUR
10+3.95 EUR
100+2.74 EUR
Mindestbestellmenge: 4 Stücke
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VS-2N682 VS-2N682 Vishay General Semiconductor - Diodes Division vs-2n681-2n5205series.pdf Description: SCR 50V 25A TO-208AA (TO-48)
Packaging: Bulk
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 145A, 150A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 6.5 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 50 V
auf Bestellung 66 Stücke:
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1+37.2 EUR
10+26.63 EUR
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BZX55B30-TAP BZX55B30-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27931 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.23 EUR
141+0.14 EUR
312+0.067 EUR
500+0.063 EUR
1000+0.058 EUR
2000+0.057 EUR
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BZX55B30-TAP BZX55B30-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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V20PWM45HM3/I V20PWM45HM3/I Vishay General Semiconductor - Diodes Division v20pwm45.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4500 Stücke
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V20PWM45HM3/I V20PWM45HM3/I Vishay General Semiconductor - Diodes Division v20pwm45.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4618 Stücke:
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9+2.34 EUR
14+1.57 EUR
100+1.09 EUR
500+0.88 EUR
1000+0.81 EUR
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V40PW45C-M3/I V40PW45C-M3/I Vishay General Semiconductor - Diodes Division v40pw45c.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Produkt ist nicht verfügbar
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V40PW45C-M3/I V40PW45C-M3/I Vishay General Semiconductor - Diodes Division v40pw45c.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
auf Bestellung 1893 Stücke:
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10+2.27 EUR
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500+1.5 EUR
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V20KL45-M3/H V20KL45-M3/H Vishay General Semiconductor - Diodes Division v20kl45.pdf Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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1500+0.51 EUR
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V20KL45-M3/H V20KL45-M3/H Vishay General Semiconductor - Diodes Division v20kl45.pdf Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 3265 Stücke:
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SAC10-E3/54 sac.pdf
SAC10-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 16.3VC DO204AC
Produkt ist nicht verfügbar
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SAC10-E3/54 sac.pdf
SAC10-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 16.3VC DO204AC
Produkt ist nicht verfügbar
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VS-E5PX3012L-N3 vs-e5px3012l-n3.pdf
VS-E5PX3012L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE FREDS 1200V 30A TO-247
Produkt ist nicht verfügbar
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VS-E5PX3012LHN3 vs-e5px3012lhn3.pdf
VS-E5PX3012LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: FREDS - TO-247G5,30A,1200V, LOW
Produkt ist nicht verfügbar
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1N5243B-T 1n5221.pdf
1N5243B-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Produkt ist nicht verfügbar
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VS-C5PH6006LHN3 vs-c5ph6006lhn3.pdf
VS-C5PH6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 30A TO-247AD
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 46 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1500 Stücke:
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2+11.52 EUR
50+6.25 EUR
100+5.9 EUR
500+5.12 EUR
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VS-C5PX6006LHN3 vs-c5px6006lhn3.pdf
VS-C5PX6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2X30A, 600V, "X" SERIES GEN5 FRE
Reverse Recovery Time (trr): 41 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
auf Bestellung 1575 Stücke:
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3+9.17 EUR
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100+6.25 EUR
500+5.55 EUR
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VS-C5PW6006LHN3 vs-c5pw6006lhn3.pdf
VS-C5PW6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 30A TO-247AD
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 39 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1552 Stücke:
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3+8.57 EUR
50+4.5 EUR
100+4.11 EUR
500+3.83 EUR
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VS-EPU6006L-N3 vs-epu6006l-n3.pdf
VS-EPU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
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5+4.8 EUR
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VS-E5PX6006LHN3 vs-e5px6006lhn3.pdf
VS-E5PX6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 46 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 490 Stücke:
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3+8.43 EUR
10+7.56 EUR
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VS-E5PX6006L-N3 vs-e5px6006l-n3.pdf
VS-E5PX6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 60A TO247AD
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 46 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
auf Bestellung 110 Stücke:
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4+6.72 EUR
10+6.03 EUR
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VS-E5PW6006LHN3 vs-e5pw6006lhn3.pdf
VS-E5PW6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 60A TO247AD
Qualification: AEC-Q101
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
auf Bestellung 1535 Stücke:
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3+9.53 EUR
50+4.97 EUR
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500+3.76 EUR
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VS-CPU6006L-N3 vs-cpu6006l-n3.pdf
VS-CPU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 42 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 413 Stücke:
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4+5.74 EUR
25+3.2 EUR
100+3.11 EUR
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VS-C4PU6006L-N3 vs-c4pu6006l-n3.pdf
VS-C4PU6006L-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
Reverse Recovery Time (trr): 65 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
auf Bestellung 493 Stücke:
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4+5.68 EUR
10+5.11 EUR
100+4.11 EUR
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VS-CPU6006LHN3 vs-cpu6006lhn3.pdf
VS-CPU6006LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO247AD
auf Bestellung 471 Stücke:
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3+7.46 EUR
10+6.7 EUR
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PLZ15C-HG3_A/H plzseries.pdf
PLZ15C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ15C-HG3_A/H plzseries.pdf
PLZ15C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO219AC
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PLZ16A-HG3_A/H plzseries.pdf
PLZ16A-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
auf Bestellung 18000 Stücke:
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4500+0.13 EUR
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PLZ16A-HG3_A/H plzseries.pdf
PLZ16A-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 21629 Stücke:
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34+0.63 EUR
55+0.39 EUR
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PLZ16C-HG3_A/H plzseries.pdf
PLZ16C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
auf Bestellung 4500 Stücke:
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4500+0.11 EUR
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PLZ16C-HG3_A/H plzseries.pdf
PLZ16C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 8810 Stücke:
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32+0.67 EUR
46+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.13 EUR
2000+0.11 EUR
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PLZ24D-HG3_A/H plzseries.pdf
PLZ24D-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Produkt ist nicht verfügbar
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PLZ24D-HG3_A/H plzseries.pdf
PLZ24D-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Qualification: AEC-Q101
Grade: Automotive
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 4468 Stücke:
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63+0.33 EUR
90+0.24 EUR
211+0.1 EUR
500+0.09 EUR
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2000+0.073 EUR
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PLZ33C-HG3_A/H plzseries.pdf
PLZ33C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PLZ33C-HG3_A/H plzseries.pdf
PLZ33C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
auf Bestellung 40 Stücke:
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AnzahlPrivatkunde
29+0.74 EUR
36+0.6 EUR
Mindestbestellmenge: 29 Stücke
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PLZ16B-HG3_A/H plzseries.pdf
PLZ16B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ16B-HG3_A/H plzseries.pdf
PLZ16B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
auf Bestellung 20 Stücke:
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VS-E5TX1506S2L-M3 vs-e5tx1506s2l-n3.pdf
VS-E5TX1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.21 EUR
1600+2.06 EUR
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VS-E5TX1506S2L-M3 vs-e5tx1506s2l-n3.pdf
VS-E5TX1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1600 Stücke:
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AnzahlPrivatkunde
4+6.39 EUR
10+4.15 EUR
100+2.88 EUR
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VS-E5TH2106S2L-M3 vs-e5th2106s2l-m3.pdf
VS-E5TH2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.9 EUR
Mindestbestellmenge: 800 Stücke
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VS-E5TH2106S2L-M3 vs-e5th2106s2l-m3.pdf
VS-E5TH2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1597 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.21 EUR
10+3.92 EUR
100+2.73 EUR
Mindestbestellmenge: 5 Stücke
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VS-E5TH1506S2L-M3 vs-e5th1506s2l-m3_.pdf
VS-E5TH1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.37 EUR
Mindestbestellmenge: 800 Stücke
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VS-E5TH1506S2L-M3 vs-e5th1506s2l-m3_.pdf
VS-E5TH1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1379 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.25 EUR
10+2.7 EUR
100+2.15 EUR
Mindestbestellmenge: 7 Stücke
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VS-E5TX2112S2L-M3 vs-e5tx2112s2l-m3.pdf
VS-E5TX2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.76 EUR
Mindestbestellmenge: 800 Stücke
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VS-E5TX2112S2L-M3 vs-e5tx2112s2l-m3.pdf
VS-E5TX2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.19 EUR
10+3.49 EUR
100+2.77 EUR
Mindestbestellmenge: 5 Stücke
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VS-E5TX1512S2L-M3 vs-e5tx1512s2l-m3.pdf
VS-E5TX1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 15A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 96 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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VS-E5TX1512S2L-M3 vs-e5tx1512s2l-m3.pdf
VS-E5TX1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 15A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 96 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1057 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.02 EUR
10+5.27 EUR
100+3.71 EUR
Mindestbestellmenge: 3 Stücke
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VS-E5TH1512S2L-M3 vs-e5th1512s2l-m3.pdf
VS-E5TH1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.67 EUR
Mindestbestellmenge: 800 Stücke
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VS-E5TH1512S2L-M3 vs-e5th1512s2l-m3.pdf
VS-E5TH1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1154 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.25 EUR
10+3.53 EUR
100+2.82 EUR
Mindestbestellmenge: 5 Stücke
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VS-E5TH3006S2L-M3 vs-e5th3006s2l-m3.pdf
VS-E5TH3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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VS-E5TH3006S2L-M3 vs-e5th3006s2l-m3.pdf
VS-E5TH3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.8 EUR
10+3.27 EUR
100+2.34 EUR
Mindestbestellmenge: 5 Stücke
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VS-E5TX3012S2L-M3 vs-e5tx3012s2l-m3.pdf
VS-E5TX3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX3012S2L-M3 vs-e5tx3012s2l-m3.pdf
VS-E5TX3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.01 EUR
10+5.96 EUR
100+4.22 EUR
Mindestbestellmenge: 3 Stücke
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VS-E5TH3012S2L-M3 vs-e5th3012s2l-m3.pdf
VS-E5TH3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.52 EUR
Mindestbestellmenge: 800 Stücke
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VS-E5TH3012S2L-M3 vs-e5th3012s2l-m3.pdf
VS-E5TH3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1036 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.89 EUR
10+4.59 EUR
100+3.43 EUR
Mindestbestellmenge: 4 Stücke
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VS-E5TX3006S2L-M3 vs-e5tx3006s2l-m3.pdf
VS-E5TX3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.63 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX3006S2L-M3 vs-e5tx3006s2l-m3.pdf
VS-E5TX3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 1591 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.38 EUR
10+4.83 EUR
100+3.38 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX2106S2L-M3 vs-e5tx2106s2l-m3.pdf
VS-E5TX2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.93 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-E5TX2106S2L-M3 vs-e5tx2106s2l-m3.pdf
VS-E5TX2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
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VS-E5TH2112S2L-M3 vs-e5th2112s2l-m3.pdf
VS-E5TH2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1600 Stücke:
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800+1.94 EUR
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VS-E5TH2112S2L-M3 vs-e5th2112s2l-m3.pdf
VS-E5TH2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 2139 Stücke:
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VS-2N682 vs-2n681-2n5205series.pdf
VS-2N682
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 50V 25A TO-208AA (TO-48)
Packaging: Bulk
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 145A, 150A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 6.5 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 50 V
auf Bestellung 66 Stücke:
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BZX55B30-TAP bzx55.pdf
BZX55B30-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27931 Stücke:
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141+0.14 EUR
312+0.067 EUR
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BZX55B30-TAP bzx55.pdf
BZX55B30-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V20PWM45HM3/I v20pwm45.pdf
V20PWM45HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V20PWM45HM3/I v20pwm45.pdf
V20PWM45HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4618 Stücke:
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V40PW45C-M3/I v40pw45c.pdf
V40PW45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Produkt ist nicht verfügbar
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V40PW45C-M3/I v40pw45c.pdf
V40PW45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
auf Bestellung 1893 Stücke:
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8+2.78 EUR
10+2.27 EUR
100+1.77 EUR
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V20KL45-M3/H v20kl45.pdf
V20KL45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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1500+0.51 EUR
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V20KL45-M3/H v20kl45.pdf
V20KL45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 3265 Stücke:
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