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PLZ16C-HG3_A/H PLZ16C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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PLZ16C-HG3_A/H PLZ16C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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46+0.46 EUR
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500+0.19 EUR
1000+0.13 EUR
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PLZ24D-HG3_A/H PLZ24D-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
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PLZ24D-HG3_A/H PLZ24D-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 24V 500MW DO219AC
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Qualification: AEC-Q101
Grade: Automotive
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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500+0.09 EUR
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PLZ33C-HG3_A/H PLZ33C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PLZ33C-HG3_A/H PLZ33C-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 33V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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PLZ16B-HG3_A/H PLZ16B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
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PLZ16B-HG3_A/H PLZ16B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 16V 500MW DO219AC
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VS-E5TX1506S2L-M3 VS-E5TX1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1506s2l-n3.pdf Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VS-E5TX1506S2L-M3 VS-E5TX1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1506s2l-n3.pdf Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VS-E5TH2106S2L-M3 VS-E5TH2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VS-E5TH2106S2L-M3 VS-E5TH2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VS-E5TH1506S2L-M3 VS-E5TH1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1506s2l-m3_.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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800+1.37 EUR
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VS-E5TH1506S2L-M3 VS-E5TH1506S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1506s2l-m3_.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VS-E5TX2112S2L-M3 VS-E5TX2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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800+1.76 EUR
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VS-E5TX2112S2L-M3 VS-E5TX2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
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VS-E5TX1512S2L-M3 VS-E5TX1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1512s2l-m3.pdf Description: DIODE STANDARD 1200V 15A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 96 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-E5TX1512S2L-M3 VS-E5TX1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx1512s2l-m3.pdf Description: DIODE STANDARD 1200V 15A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 96 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1057 Stücke:
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3+8.02 EUR
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VS-E5TH1512S2L-M3 VS-E5TH1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1512s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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800+1.67 EUR
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VS-E5TH1512S2L-M3 VS-E5TH1512S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th1512s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1154 Stücke:
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5+4.25 EUR
10+3.53 EUR
100+2.82 EUR
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VS-E5TH3006S2L-M3 VS-E5TH3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3006s2l-m3.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
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VS-E5TH3006S2L-M3 VS-E5TH3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3006s2l-m3.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 156 Stücke:
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5+4.8 EUR
10+3.27 EUR
100+2.34 EUR
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VS-E5TX3012S2L-M3 VS-E5TX3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
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VS-E5TX3012S2L-M3 VS-E5TX3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1465 Stücke:
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10+6.13 EUR
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100+4.36 EUR
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VS-E5TH3012S2L-M3 VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
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800+2.52 EUR
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VS-E5TH3012S2L-M3 VS-E5TH3012S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th3012s2l-m3.pdf Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1036 Stücke:
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4+6.89 EUR
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VS-E5TX3006S2L-M3 VS-E5TX3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3006s2l-m3.pdf Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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VS-E5TX3006S2L-M3 VS-E5TX3006S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx3006s2l-m3.pdf Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 1581 Stücke:
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VS-E5TX2106S2L-M3 VS-E5TX2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VS-E5TX2106S2L-M3 VS-E5TX2106S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5tx2106s2l-m3.pdf Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1253 Stücke:
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VS-E5TH2112S2L-M3 VS-E5TH2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1600 Stücke:
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800+1.94 EUR
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VS-E5TH2112S2L-M3 VS-E5TH2112S2L-M3 Vishay General Semiconductor - Diodes Division vs-e5th2112s2l-m3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 2139 Stücke:
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VS-2N682 VS-2N682 Vishay General Semiconductor - Diodes Division vs-2n681-2n5205series.pdf Description: SCR 50V 25A TO-208AA (TO-48)
Packaging: Bulk
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 145A, 150A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 6.5 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 50 V
auf Bestellung 66 Stücke:
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BZX55B30-TAP BZX55B30-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27931 Stücke:
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91+0.23 EUR
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500+0.063 EUR
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BZX55B30-TAP BZX55B30-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V20PWM45HM3/I V20PWM45HM3/I Vishay General Semiconductor - Diodes Division v20pwm45.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V20PWM45HM3/I V20PWM45HM3/I Vishay General Semiconductor - Diodes Division v20pwm45.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4618 Stücke:
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9+2.34 EUR
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100+1.09 EUR
500+0.88 EUR
1000+0.81 EUR
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V40PW45C-M3/I V40PW45C-M3/I Vishay General Semiconductor - Diodes Division v40pw45c.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Produkt ist nicht verfügbar
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V40PW45C-M3/I V40PW45C-M3/I Vishay General Semiconductor - Diodes Division v40pw45c.pdf Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
auf Bestellung 1893 Stücke:
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8+2.78 EUR
10+2.27 EUR
100+1.77 EUR
500+1.5 EUR
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V20KL45-M3/H V20KL45-M3/H Vishay General Semiconductor - Diodes Division v20kl45.pdf Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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1500+0.51 EUR
3000+0.5 EUR
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V20KL45-M3/H V20KL45-M3/H Vishay General Semiconductor - Diodes Division v20kl45.pdf Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 3265 Stücke:
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V40DM45C-M3/I V40DM45C-M3/I Vishay General Semiconductor - Diodes Division v40dm45c.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
Produkt ist nicht verfügbar
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V40DM45C-M3/I V40DM45C-M3/I Vishay General Semiconductor - Diodes Division v40dm45c.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
auf Bestellung 1864 Stücke:
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500+2.13 EUR
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V40D45C-M3/I V40D45C-M3/I Vishay General Semiconductor - Diodes Division v40d45c.pdf Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
auf Bestellung 1965 Stücke:
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6+3.83 EUR
10+3.19 EUR
100+2.53 EUR
500+2.14 EUR
1000+1.82 EUR
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TZMC3V9-GS18 TZMC3V9-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 3.9V 500MW SOD80
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10000+0.064 EUR
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TZMC3V9-GS18 TZMC3V9-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 3.9V 500MW SOD80
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44+0.48 EUR
52+0.4 EUR
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1000+0.096 EUR
2000+0.087 EUR
5000+0.076 EUR
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VS-8ETH06S-M3 VS-8ETH06S-M3 Vishay General Semiconductor - Diodes Division vs-8eth06s-m3.pdf Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 18870 Stücke:
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5+4.93 EUR
50+2.43 EUR
100+2.18 EUR
500+1.75 EUR
1000+1.62 EUR
2000+1.5 EUR
5000+1.37 EUR
10000+1.32 EUR
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SMAJ45AHM3/H SMAJ45AHM3/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ45AHE3_A/H SMAJ45AHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX55B16-TR BZX55B16-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
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BZX55B16-TR BZX55B16-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27090 Stücke:
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91+0.23 EUR
136+0.15 EUR
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500+0.062 EUR
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SMF40A-HM3-08 SMF40A-HM3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 40VWM 64.5VC SMF
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 3.1A
Capacitance @ Frequency: 172pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SMF40A-HM3-08 SMF40A-HM3-08 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 40VWM 64.5VC SMF
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 3.1A
Capacitance @ Frequency: 172pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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SML4740AHE3_A/H SML4740AHE3_A/H Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 10V 1W DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SML4740AHE3_A/H SML4740AHE3_A/H Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 10V 1W DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±10%
Packaging: Cut Tape (CT)
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BAS16WS-G3-18 BAS16WS-G3-18 Vishay General Semiconductor - Diodes Division bas16ws.pdf Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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BAS16WS-G3-18 BAS16WS-G3-18 Vishay General Semiconductor - Diodes Division bas16ws.pdf Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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TZX24B-TAP TZX24B-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 24V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
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TZX24B-TAP TZX24B-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 24V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
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SA2G-E3/5AT SA2G-E3/5AT Vishay General Semiconductor - Diodes Division sa2b.pdf Description: DIODE STANDARD 400V 2A DO214AC
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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PLZ16C-HG3_A/H plzseries.pdf
PLZ16C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
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PLZ16C-HG3_A/H plzseries.pdf
PLZ16C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Grade: Automotive
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 18 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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PLZ24D-HG3_A/H plzseries.pdf
PLZ24D-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 35 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Produkt ist nicht verfügbar
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PLZ24D-HG3_A/H plzseries.pdf
PLZ24D-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO219AC
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 200 nA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Qualification: AEC-Q101
Grade: Automotive
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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PLZ33C-HG3_A/H plzseries.pdf
PLZ33C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PLZ33C-HG3_A/H plzseries.pdf
PLZ33C-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 500MW DO219AC
Current - Reverse Leakage @ Vr: 200 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-219AC (microSMF)
Impedance (Max) (Zzt): 65 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
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29+0.74 EUR
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PLZ16B-HG3_A/H plzseries.pdf
PLZ16B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
Produkt ist nicht verfügbar
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PLZ16B-HG3_A/H plzseries.pdf
PLZ16B-HG3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO219AC
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VS-E5TX1506S2L-M3 vs-e5tx1506s2l-n3.pdf
VS-E5TX1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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800+2.21 EUR
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VS-E5TX1506S2L-M3 vs-e5tx1506s2l-n3.pdf
VS-E5TX1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VS-E5TH2106S2L-M3 vs-e5th2106s2l-m3.pdf
VS-E5TH2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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800+1.9 EUR
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VS-E5TH2106S2L-M3 vs-e5th2106s2l-m3.pdf
VS-E5TH2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.68 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1597 Stücke:
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5+4.21 EUR
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VS-E5TH1506S2L-M3 vs-e5th1506s2l-m3_.pdf
VS-E5TH1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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800+1.37 EUR
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VS-E5TH1506S2L-M3 vs-e5th1506s2l-m3_.pdf
VS-E5TH1506S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1379 Stücke:
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7+3.25 EUR
10+2.7 EUR
100+2.15 EUR
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VS-E5TX2112S2L-M3 vs-e5tx2112s2l-m3.pdf
VS-E5TX2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 115 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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AnzahlPrivatkunde
800+1.76 EUR
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VS-E5TX2112S2L-M3 vs-e5tx2112s2l-m3.pdf
VS-E5TX2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 115 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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5+4.19 EUR
10+3.49 EUR
100+2.77 EUR
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VS-E5TX1512S2L-M3 vs-e5tx1512s2l-m3.pdf
VS-E5TX1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 15A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 96 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-E5TX1512S2L-M3 vs-e5tx1512s2l-m3.pdf
VS-E5TX1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 15A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 15A
Technology: Standard
Reverse Recovery Time (trr): 96 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1057 Stücke:
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AnzahlPrivatkunde
3+8.02 EUR
10+5.27 EUR
100+3.71 EUR
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VS-E5TH1512S2L-M3 vs-e5th1512s2l-m3.pdf
VS-E5TH1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 800 Stücke:
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AnzahlPrivatkunde
800+1.67 EUR
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VS-E5TH1512S2L-M3 vs-e5th1512s2l-m3.pdf
VS-E5TH1512S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1154 Stücke:
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AnzahlPrivatkunde
5+4.25 EUR
10+3.53 EUR
100+2.82 EUR
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VS-E5TH3006S2L-M3 vs-e5th3006s2l-m3.pdf
VS-E5TH3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
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VS-E5TH3006S2L-M3 vs-e5th3006s2l-m3.pdf
VS-E5TH3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 156 Stücke:
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AnzahlPrivatkunde
5+4.8 EUR
10+3.27 EUR
100+2.34 EUR
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VS-E5TX3012S2L-M3 vs-e5tx3012s2l-m3.pdf
VS-E5TX3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Produkt ist nicht verfügbar
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VS-E5TX3012S2L-M3 vs-e5tx3012s2l-m3.pdf
VS-E5TX3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1465 Stücke:
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AnzahlPrivatkunde
3+9.26 EUR
10+6.13 EUR
50+4.78 EUR
100+4.36 EUR
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VS-E5TH3012S2L-M3 vs-e5th3012s2l-m3.pdf
VS-E5TH3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.52 EUR
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VS-E5TH3012S2L-M3 vs-e5th3012s2l-m3.pdf
VS-E5TH3012S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 30A TO263AB
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 113 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1036 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.89 EUR
10+4.59 EUR
100+3.43 EUR
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VS-E5TX3006S2L-M3 vs-e5tx3006s2l-m3.pdf
VS-E5TX3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 800 Stücke:
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AnzahlPrivatkunde
800+2.7 EUR
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VS-E5TX3006S2L-M3 vs-e5tx3006s2l-m3.pdf
VS-E5TX3006S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 39 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 1581 Stücke:
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AnzahlPrivatkunde
3+7.58 EUR
10+4.96 EUR
50+3.84 EUR
100+3.49 EUR
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VS-E5TX2106S2L-M3 vs-e5tx2106s2l-m3.pdf
VS-E5TX2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.93 EUR
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VS-E5TX2106S2L-M3 vs-e5tx2106s2l-m3.pdf
VS-E5TX2106S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 33 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.19 EUR
10+3.94 EUR
100+2.74 EUR
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VS-E5TH2112S2L-M3 vs-e5th2112s2l-m3.pdf
VS-E5TH2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 1600 Stücke:
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AnzahlPrivatkunde
800+1.94 EUR
1600+1.87 EUR
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VS-E5TH2112S2L-M3 vs-e5th2112s2l-m3.pdf
VS-E5TH2112S2L-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 2139 Stücke:
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AnzahlPrivatkunde
4+6.07 EUR
10+3.95 EUR
100+2.74 EUR
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VS-2N682 vs-2n681-2n5205series.pdf
VS-2N682
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 50V 25A TO-208AA (TO-48)
Packaging: Bulk
Package / Case: TO-208AA, TO-48-3, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 145A, 150A
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 6.5 mA
Supplier Device Package: TO-208AA (TO-48)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 50 V
auf Bestellung 66 Stücke:
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AnzahlPrivatkunde
1+37.2 EUR
10+26.63 EUR
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BZX55B30-TAP bzx55.pdf
BZX55B30-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27931 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
91+0.23 EUR
141+0.14 EUR
312+0.067 EUR
500+0.063 EUR
1000+0.058 EUR
2000+0.057 EUR
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BZX55B30-TAP bzx55.pdf
BZX55B30-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 22 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V20PWM45HM3/I v20pwm45.pdf
V20PWM45HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V20PWM45HM3/I v20pwm45.pdf
V20PWM45HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 700 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 3100pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4618 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.34 EUR
14+1.57 EUR
100+1.09 EUR
500+0.88 EUR
1000+0.81 EUR
2000+0.75 EUR
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V40PW45C-M3/I v40pw45c.pdf
V40PW45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Produkt ist nicht verfügbar
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V40PW45C-M3/I v40pw45c.pdf
V40PW45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 20A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
auf Bestellung 1893 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.78 EUR
10+2.27 EUR
100+1.77 EUR
500+1.5 EUR
1000+1.23 EUR
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V20KL45-M3/H v20kl45.pdf
V20KL45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
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V20KL45-M3/H v20kl45.pdf
V20KL45-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 5.4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3400pF @ 4V, 1MHz
Current - Average Rectified (Io): 5.4A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Qualification: AEC-Q101
auf Bestellung 3265 Stücke:
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V40DM45C-M3/I v40dm45c.pdf
V40DM45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
Produkt ist nicht verfügbar
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V40DM45C-M3/I v40dm45c.pdf
V40DM45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
auf Bestellung 1864 Stücke:
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6+3.8 EUR
10+3.15 EUR
100+2.51 EUR
500+2.13 EUR
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V40D45C-M3/I v40d45c.pdf
V40D45C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
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6+3.83 EUR
10+3.19 EUR
100+2.53 EUR
500+2.14 EUR
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TZMC3V9-GS18 tzm.pdf
TZMC3V9-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
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10000+0.064 EUR
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TZMC3V9-GS18 tzm.pdf
TZMC3V9-GS18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
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44+0.48 EUR
52+0.4 EUR
100+0.21 EUR
500+0.14 EUR
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2000+0.087 EUR
5000+0.076 EUR
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VS-8ETH06S-M3 vs-8eth06s-m3.pdf
VS-8ETH06S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 18870 Stücke:
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5+4.93 EUR
50+2.43 EUR
100+2.18 EUR
500+1.75 EUR
1000+1.62 EUR
2000+1.5 EUR
5000+1.37 EUR
10000+1.32 EUR
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SMAJ45AHM3/H smaj50a.pdf
SMAJ45AHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ45AHE3_A/H smaj50a.pdf
SMAJ45AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX55B16-TR bzx55.pdf
BZX55B16-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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10000+0.056 EUR
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BZX55B16-TR bzx55.pdf
BZX55B16-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27090 Stücke:
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91+0.23 EUR
136+0.15 EUR
321+0.065 EUR
500+0.062 EUR
1000+0.058 EUR
2000+0.057 EUR
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SMF40A-HM3-08 smf5v0atosmf58a.pdf
SMF40A-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC SMF
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 3.1A
Capacitance @ Frequency: 172pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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3000+0.15 EUR
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SMF40A-HM3-08 smf5v0atosmf58a.pdf
SMF40A-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40VWM 64.5VC SMF
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 64.5V
Voltage - Breakdown (Min): 44.4V
Unidirectional Channels: 1
Supplier Device Package: DO-219AB (SMF)
Voltage - Reverse Standoff (Typ): 40V
Current - Peak Pulse (10/1000µs): 3.1A
Capacitance @ Frequency: 172pF @ 1MHz
Operating Temperature: -65°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 27565 Stücke:
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29+0.74 EUR
37+0.57 EUR
100+0.35 EUR
500+0.32 EUR
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SML4740AHE3_A/H sml4738.pdf
SML4740AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1W DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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SML4740AHE3_A/H sml4738.pdf
SML4740AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1W DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±10%
Packaging: Cut Tape (CT)
auf Bestellung 1689 Stücke:
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BAS16WS-G3-18 bas16ws.pdf
BAS16WS-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 30000 Stücke:
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10000+0.12 EUR
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BAS16WS-G3-18 bas16ws.pdf
BAS16WS-G3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 39673 Stücke:
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32+0.67 EUR
51+0.42 EUR
71+0.3 EUR
100+0.26 EUR
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TZX24B-TAP tzxserie.pdf
TZX24B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Cut Tape (CT)
auf Bestellung 17745 Stücke:
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25+0.86 EUR
40+0.54 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.23 EUR
2000+0.2 EUR
5000+0.18 EUR
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TZX24B-TAP tzxserie.pdf
TZX24B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 19 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 70 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Box (TB)
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
10000+0.15 EUR
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SA2G-E3/5AT sa2b.pdf
SA2G-E3/5AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 2A DO214AC
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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