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V20K60-M3/H V20K60-M3/H Vishay General Semiconductor - Diodes Division v20k60.pdf Description: DIODE SCHOTTKY 60V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2910pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
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1500+0.50 EUR
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V20K60-M3/H V20K60-M3/H Vishay General Semiconductor - Diodes Division v20k60.pdf Description: DIODE SCHOTTKY 60V 5A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2910pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
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500+0.68 EUR
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MBRF20H50CT-E3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)20H35CT%20-%2020H60CT.pdf Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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MBRF20H50CTHE3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)20H35CT%20-%2020H60CT.pdf Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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MBRF20H35CT-E3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)20H35CT%20-%2020H60CT.pdf Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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MBRF20H35CTHE3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)20H35CT%20-%2020H60CT.pdf Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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VS-ST230S12P0VPBF VS-ST230S12P0VPBF Vishay General Semiconductor - Diodes Division vs-st230svpbfseries.pdf Description: SCR 1.2KV 360A TO209AB
Packaging: Bulk
Package / Case: TO-209AB, TO-93-4, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A, 5000A
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.55 V
Current - Off State (Max): 30 mA
Supplier Device Package: TO-209AB (TO-93)
Part Status: Active
Current - On State (It (RMS)) (Max): 360 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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VS-VSKT56/16 VS-VSKT56/16 Vishay General Semiconductor - Diodes Division vs-vsk4156.pdf Description: MODULE THYRISTOR 60A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1200A, 1256A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 135 A
Voltage - Off State: 1.6 kV
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VS-VSKT570-16PBF VS-VSKT570-16PBF Vishay General Semiconductor - Diodes Division vs-vskt570-16pbf.pdf Description: MODULE THY 570A SMAGN-A-PAK
Packaging: Bulk
Package / Case: 3-SuperMAGN-A-PAK™
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A, 18800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 570 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 894 A
Voltage - Off State: 1.6 kV
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VS-75EPU12L-N3 Vishay General Semiconductor - Diodes Division vs-75epu12l-n3.pdf Description: DIODE STANDARD 1200V 75A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 75 A
Current - Reverse Leakage @ Vr: 420 µA @ 1200 V
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VS-50EPU12L-N3 Vishay General Semiconductor - Diodes Division vs-50epu12l-n3.pdf Description: DIODE GEN PURP 1.2KV 50A TO247AD
Produkt ist nicht verfügbar
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VS-50EPU12LHN3 Vishay General Semiconductor - Diodes Division vs-50epu12lhn3.pdf Description: DIODE GEN PURP 1.2KV 50A TO247AD
Produkt ist nicht verfügbar
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P6KE11CA-E3/54 P6KE11CA-E3/54 Vishay General Semiconductor - Diodes Division p6ke.pdf Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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P6KE11CA-E3/54 P6KE11CA-E3/54 Vishay General Semiconductor - Diodes Division p6ke.pdf Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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VS-60EPU02-N3 VS-60EPU02-N3 Vishay General Semiconductor - Diodes Division vs-60epu02-n3.pdf Description: DIODE STANDARD 200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
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VS-60EPS08-M3 VS-60EPS08-M3 Vishay General Semiconductor - Diodes Division vs-60eps-m3series.pdf Description: DIODE STANDARD 800V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
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VS-60MT80KPBF VS-60MT80KPBF Vishay General Semiconductor - Diodes Division VS-60-70MT_KPbF.pdf Description: BRIDGE RECT 3PHASE 800V 60A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 60 A
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VSSAF512-M3/H VSSAF512-M3/H Vishay General Semiconductor - Diodes Division vssaf512.pdf Description: DIODE SCHOTTKY 120V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Produkt ist nicht verfügbar
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VSSAF512-M3/H VSSAF512-M3/H Vishay General Semiconductor - Diodes Division vssaf512.pdf Description: DIODE SCHOTTKY 120V 5A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
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VSSAF512HM3/H Vishay General Semiconductor - Diodes Division vssaf512.pdf Description: DIODE SCHOTTKY 120V 5A DO221AC
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VSSAF512HM3/H Vishay General Semiconductor - Diodes Division vssaf512.pdf Description: DIODE SCHOTTKY 120V 5A DO221AC
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MBRF25H45CTHE3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)25HxxCT_Rev_6-12-13.pdf Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBRF25H50CT-E3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)25HxxCT_Rev_6-12-13.pdf Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Produkt ist nicht verfügbar
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MBRF25H50CTHE3/45 Vishay General Semiconductor - Diodes Division MBR(F,B)25HxxCT_Rev_6-12-13.pdf Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Produkt ist nicht verfügbar
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VT3080S-E3/4W VT3080S-E3/4W Vishay General Semiconductor - Diodes Division vt3080s.pdf Description: DIODE SCHOTTKY 80V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
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VFT3080S-E3S/4W Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 80V 30A ITO220AB
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BAV19WS-HG3-18 BAV19WS-HG3-18 Vishay General Semiconductor - Diodes Division bav19wsg.pdf Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TZX7V5B-TAP TZX7V5B-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
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TZX7V5B-TAP TZX7V5B-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
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SE8D20D-M3/H SE8D20D-M3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
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3500+0.20 EUR
7000+0.19 EUR
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SE8D20D-M3/H SE8D20D-M3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SE8D20JHM3/H SE8D20JHM3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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SE8D20JHM3/H SE8D20JHM3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14600 Stücke:
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SE8D20G-M3/H SE8D20G-M3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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SE8D20G-M3/H SE8D20G-M3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14406 Stücke:
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SE8D20DHM3/H SE8D20DHM3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SE8D20DHM3/H SE8D20DHM3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SE8D20GHM3/H SE8D20GHM3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
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SE8D20GHM3/H SE8D20GHM3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14600 Stücke:
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SE8D20DHM3/I SE8D20DHM3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SE8D20DHM3/I SE8D20DHM3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13982 Stücke:
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SE8D20J-M3/H SE8D20J-M3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
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SE8D20J-M3/H SE8D20J-M3/H Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13970 Stücke:
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SE8D20D-M3/I SE8D20D-M3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SE8D20D-M3/I SE8D20D-M3/I Vishay General Semiconductor - Diodes Division se8d20d_g_j.pdf Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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BZG05B6V8-HM3-08 BZG05B6V8-HM3-08 Vishay General Semiconductor - Diodes Division bzg05b-m-series.pdf Description: DIODE ZENER 6.8V 1.25W DO214AC
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BZG05B6V8-HM3-08 BZG05B6V8-HM3-08 Vishay General Semiconductor - Diodes Division bzg05b-m-series.pdf Description: DIODE ZENER 6.8V 1.25W DO214AC
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BZG05B6V8-HM3-18 BZG05B6V8-HM3-18 Vishay General Semiconductor - Diodes Division bzg05b-m-series.pdf Description: DIODE ZENER 6.8V 1.25W DO214AC
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VS-30BQ015HM3/9AT VS-30BQ015HM3/9AT Vishay General Semiconductor - Diodes Division vs-30bq015hm3.pdf Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
Qualification: AEC-Q101
auf Bestellung 5539 Stücke:
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VS-30BQ015HM3/9AT VS-30BQ015HM3/9AT Vishay General Semiconductor - Diodes Division vs-30bq015hm3.pdf Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
Qualification: AEC-Q101
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3500+0.32 EUR
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BZX55B24-TAP BZX55B24-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 24V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
auf Bestellung 17631 Stücke:
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BZX55B24-TAP BZX55B24-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 24V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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10000+0.03 EUR
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V60D60C-M3/I Vishay General Semiconductor - Diodes Division v60d60c.pdf Description: DIODE ARR SCHOTT 60V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 5 mA @ 60 V
auf Bestellung 1940 Stücke:
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6+3.29 EUR
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SMCJ45CA-E3/57T SMCJ45CA-E3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 2379 Stücke:
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SMAJ45CAHM3/H SMAJ45CAHM3/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ45CAHM3/I SMAJ45CAHM3/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CS1M-E3R/I Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RS2A-E3/5BT RS2A-E3/5BT Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE GEN PURP 50V 1.5A DO214AA
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
3200+0.25 EUR
Mindestbestellmenge: 3200
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RS2A-E3/5BT RS2A-E3/5BT Vishay General Semiconductor - Diodes Division rs2a.pdf Description: DIODE GEN PURP 50V 1.5A DO214AA
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
29+0.61 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.28 EUR
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S2A/54 S2A/54 Vishay General Semiconductor - Diodes Division S2x.pdf Description: DIODE GEN PURP 50V 1.5A DO214AA
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V20K60-M3/H v20k60.pdf
V20K60-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2910pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.50 EUR
Mindestbestellmenge: 1500
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V20K60-M3/H v20k60.pdf
V20K60-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2910pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 20 A
Current - Reverse Leakage @ Vr: 700 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 2855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
16+1.14 EUR
100+0.87 EUR
500+0.68 EUR
Mindestbestellmenge: 11
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MBRF20H50CT-E3/45 MBR(F,B)20H35CT%20-%2020H60CT.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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MBRF20H50CTHE3/45 MBR(F,B)20H35CT%20-%2020H60CT.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Produkt ist nicht verfügbar
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MBRF20H35CT-E3/45 MBR(F,B)20H35CT%20-%2020H60CT.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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MBRF20H35CTHE3/45 MBR(F,B)20H35CT%20-%2020H60CT.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Produkt ist nicht verfügbar
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VS-ST230S12P0VPBF vs-st230svpbfseries.pdf
VS-ST230S12P0VPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 360A TO209AB
Packaging: Bulk
Package / Case: TO-209AB, TO-93-4, Stud
Mounting Type: Chassis, Stud Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A, 5000A
Current - On State (It (AV)) (Max): 230 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.55 V
Current - Off State (Max): 30 mA
Supplier Device Package: TO-209AB (TO-93)
Part Status: Active
Current - On State (It (RMS)) (Max): 360 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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VS-VSKT56/16 vs-vsk4156.pdf
VS-VSKT56/16
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THYRISTOR 60A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1200A, 1256A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 135 A
Voltage - Off State: 1.6 kV
auf Bestellung 17 Stücke:
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Anzahl Preis
1+64.68 EUR
10+49.86 EUR
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VS-VSKT570-16PBF vs-vskt570-16pbf.pdf
VS-VSKT570-16PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULE THY 570A SMAGN-A-PAK
Packaging: Bulk
Package / Case: 3-SuperMAGN-A-PAK™
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A, 18800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 570 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (RMS)) (Max): 894 A
Voltage - Off State: 1.6 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+483.28 EUR
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VS-75EPU12L-N3 vs-75epu12l-n3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 75A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 265 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 75 A
Current - Reverse Leakage @ Vr: 420 µA @ 1200 V
auf Bestellung 813 Stücke:
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Anzahl Preis
3+7.09 EUR
25+4.50 EUR
100+4.24 EUR
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VS-50EPU12L-N3 vs-50epu12l-n3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 50A TO247AD
Produkt ist nicht verfügbar
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VS-50EPU12LHN3 vs-50epu12lhn3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 50A TO247AD
Produkt ist nicht verfügbar
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P6KE11CA-E3/54 p6ke.pdf
P6KE11CA-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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P6KE11CA-E3/54 p6ke.pdf
P6KE11CA-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.5A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 1142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
23+0.80 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.35 EUR
Mindestbestellmenge: 19
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VS-60EPU02-N3 vs-60epu02-n3.pdf
VS-60EPU02-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 28 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
auf Bestellung 523 Stücke:
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Anzahl Preis
2+11.86 EUR
25+7.36 EUR
100+6.81 EUR
500+6.44 EUR
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VS-60EPS08-M3 vs-60eps-m3series.pdf
VS-60EPS08-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 60A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 800 V
auf Bestellung 1871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.19 EUR
25+5.61 EUR
100+5.42 EUR
Mindestbestellmenge: 2
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VS-60MT80KPBF VS-60-70MT_KPbF.pdf
VS-60MT80KPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 800V 60A MT-K
Packaging: Tray
Package / Case: MT-K Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: MT-K
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 60 A
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+113.89 EUR
15+110.81 EUR
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VSSAF512-M3/H vssaf512.pdf
VSSAF512-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Produkt ist nicht verfügbar
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VSSAF512-M3/H vssaf512.pdf
VSSAF512-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 5A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
auf Bestellung 6167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
42+0.43 EUR
100+0.27 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 28
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VSSAF512HM3/H vssaf512.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 5A DO221AC
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.23 EUR
7000+0.22 EUR
Mindestbestellmenge: 3500
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VSSAF512HM3/H vssaf512.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 5A DO221AC
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
27+0.66 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.25 EUR
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MBRF25H45CTHE3/45 MBR(F,B)25HxxCT_Rev_6-12-13.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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MBRF25H50CT-E3/45 MBR(F,B)25HxxCT_Rev_6-12-13.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Produkt ist nicht verfügbar
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MBRF25H50CTHE3/45 MBR(F,B)25HxxCT_Rev_6-12-13.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY ITO-220AC
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
Produkt ist nicht verfügbar
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VT3080S-E3/4W vt3080s.pdf
VT3080S-E3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 80 V
auf Bestellung 7452 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.50 EUR
50+1.20 EUR
100+0.95 EUR
500+0.81 EUR
1000+0.80 EUR
Mindestbestellmenge: 12
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VFT3080S-E3S/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 30A ITO220AB
Produkt ist nicht verfügbar
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BAV19WS-HG3-18 bav19wsg.pdf
BAV19WS-HG3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZX7V5B-TAP tzxserie.pdf
TZX7V5B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
71+0.25 EUR
146+0.12 EUR
500+0.10 EUR
1000+0.07 EUR
2000+0.06 EUR
5000+0.06 EUR
Mindestbestellmenge: 50
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TZX7V5B-TAP tzxserie.pdf
TZX7V5B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20D-M3/H se8d20d_g_j.pdf
SE8D20D-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.20 EUR
7000+0.19 EUR
10500+0.18 EUR
Mindestbestellmenge: 3500
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SE8D20D-M3/H se8d20d_g_j.pdf
SE8D20D-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.58 EUR
100+0.35 EUR
500+0.32 EUR
1000+0.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20JHM3/H se8d20d_g_j.pdf
SE8D20JHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.23 EUR
7000+0.22 EUR
10500+0.20 EUR
Mindestbestellmenge: 3500
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SE8D20JHM3/H se8d20d_g_j.pdf
SE8D20JHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
27+0.66 EUR
100+0.39 EUR
500+0.37 EUR
1000+0.25 EUR
Mindestbestellmenge: 21
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SE8D20G-M3/H se8d20d_g_j.pdf
SE8D20G-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.20 EUR
7000+0.19 EUR
10500+0.18 EUR
Mindestbestellmenge: 3500
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SE8D20G-M3/H se8d20d_g_j.pdf
SE8D20G-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14406 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.58 EUR
100+0.35 EUR
500+0.32 EUR
1000+0.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20DHM3/H se8d20d_g_j.pdf
SE8D20DHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.23 EUR
7000+0.22 EUR
Mindestbestellmenge: 3500
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20DHM3/H se8d20d_g_j.pdf
SE8D20DHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
27+0.66 EUR
100+0.39 EUR
500+0.37 EUR
1000+0.25 EUR
Mindestbestellmenge: 21
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SE8D20GHM3/H se8d20d_g_j.pdf
SE8D20GHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.23 EUR
7000+0.22 EUR
10500+0.20 EUR
Mindestbestellmenge: 3500
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20GHM3/H se8d20d_g_j.pdf
SE8D20GHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
27+0.66 EUR
100+0.39 EUR
500+0.37 EUR
1000+0.25 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20DHM3/I se8d20d_g_j.pdf
SE8D20DHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20DHM3/I se8d20d_g_j.pdf
SE8D20DHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
27+0.66 EUR
100+0.39 EUR
500+0.37 EUR
1000+0.25 EUR
2000+0.23 EUR
5000+0.22 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20J-M3/H se8d20d_g_j.pdf
SE8D20J-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.20 EUR
7000+0.19 EUR
10500+0.18 EUR
Mindestbestellmenge: 3500
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20J-M3/H se8d20d_g_j.pdf
SE8D20J-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.58 EUR
100+0.35 EUR
500+0.32 EUR
1000+0.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20D-M3/I se8d20d_g_j.pdf
SE8D20D-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14000+0.18 EUR
Mindestbestellmenge: 14000
Im Einkaufswagen  Stück im Wert von  UAH
SE8D20D-M3/I se8d20d_g_j.pdf
SE8D20D-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 2A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
31+0.58 EUR
100+0.35 EUR
500+0.32 EUR
1000+0.22 EUR
2000+0.20 EUR
5000+0.19 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BZG05B6V8-HM3-08 bzg05b-m-series.pdf
BZG05B6V8-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1.25W DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZG05B6V8-HM3-08 bzg05b-m-series.pdf
BZG05B6V8-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1.25W DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZG05B6V8-HM3-18 bzg05b-m-series.pdf
BZG05B6V8-HM3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 1.25W DO214AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-30BQ015HM3/9AT vs-30bq015hm3.pdf
VS-30BQ015HM3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
Qualification: AEC-Q101
auf Bestellung 5539 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
23+0.79 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
VS-30BQ015HM3/9AT vs-30bq015hm3.pdf
VS-30BQ015HM3/9AT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.32 EUR
Mindestbestellmenge: 3500
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BZX55B24-TAP bzx55.pdf
BZX55B24-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
auf Bestellung 17631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
527+0.03 EUR
Mindestbestellmenge: 112
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BZX55B24-TAP bzx55.pdf
BZX55B24-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.03 EUR
Mindestbestellmenge: 10000
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V60D60C-M3/I v60d60c.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 5 mA @ 60 V
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.74 EUR
100+2.18 EUR
500+1.84 EUR
1000+1.56 EUR
Mindestbestellmenge: 6
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SMCJ45CA-E3/57T smcj.pdf
SMCJ45CA-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 2379 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
22+0.81 EUR
100+0.57 EUR
Mindestbestellmenge: 16
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SMAJ45CAHM3/H smaj50a.pdf
SMAJ45CAHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ45CAHM3/I smaj50a.pdf
SMAJ45CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 45VWM 72.7VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CS1M-E3R/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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RS2A-E3/5BT rs2a.pdf
RS2A-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1.5A DO214AA
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3200+0.25 EUR
Mindestbestellmenge: 3200
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RS2A-E3/5BT rs2a.pdf
RS2A-E3/5BT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1.5A DO214AA
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
29+0.61 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.28 EUR
Mindestbestellmenge: 25
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S2A/54 S2x.pdf
S2A/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 1.5A DO214AA
Produkt ist nicht verfügbar
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