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SML4752AHE3_A/H SML4752AHE3_A/H Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 33V 1W DO214AC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
Power - Max: 1 W
Part Status: Active
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VSSAF5M6-M3/I Vishay General Semiconductor - Diodes Division vssaf5m6.pdf Description: DIODE SCHOTTKY 60V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
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VSSAF5M6-M3/I Vishay General Semiconductor - Diodes Division vssaf5m6.pdf Description: DIODE SCHOTTKY 60V 5A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
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V3PM6-M3/I V3PM6-M3/I Vishay General Semiconductor - Diodes Division v3pm6.pdf Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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V3PM6-M3/I V3PM6-M3/I Vishay General Semiconductor - Diodes Division v3pm6.pdf Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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VSSAF3M6-M3/H Vishay General Semiconductor - Diodes Division vssaf3m6.pdf Description: DIODE SCHOTTKY 60V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
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VSSAF3M6-M3/H Vishay General Semiconductor - Diodes Division vssaf3m6.pdf Description: DIODE SCHOTTKY 60V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
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VS-125NQ015PBF VS-125NQ015PBF Vishay General Semiconductor - Diodes Division vs-125nq015pbf.pdf Description: DIODE SCHOTTKY 15V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67 HALF-PAK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 120 A
Current - Reverse Leakage @ Vr: 40 mA @ 15 V
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1.5KE75CAHE3_B/C 1.5KE75CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 64.1VWM 103VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5246B-HE3_A-18 MMSZ5246B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5246B-HE3_A-08 MMSZ5246B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
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G3SBA60-E3/45 G3SBA60-E3/45 Vishay General Semiconductor - Diodes Division g3sba20.pdf Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 2.3 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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SM8S12CAHM3/I SM8S12CAHM3/I Vishay General Semiconductor - Diodes Division sm8s10cathrusm8s85ca.pdf Description: TVS DIODE 12VWM 19.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 332A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SM8S12CAHM3/I SM8S12CAHM3/I Vishay General Semiconductor - Diodes Division sm8s10cathrusm8s85ca.pdf Description: TVS DIODE 12VWM 19.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 332A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SM8S12A-001HE3_A/I SM8S12A-001HE3_A/I Vishay General Semiconductor - Diodes Division sm8s.pdf Description: TVS DIODE 12VWM DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 332A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SM8S12A-001HE3/2D SM8S12A-001HE3/2D Vishay General Semiconductor - Diodes Division SM8S10_thru_SM8S43A._Aug.31,2016.pdf Description: TVS DIODE 12VWM 19.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 332A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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AR1PG-M3/84A AR1PG-M3/84A Vishay General Semiconductor - Diodes Division ar1pm.pdf Description: DIODE AVALANCHE 400V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
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AR1FG-M3/I AR1FG-M3/I Vishay General Semiconductor - Diodes Division ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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AR1FG-M3/I AR1FG-M3/I Vishay General Semiconductor - Diodes Division ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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AR1FGHM3/H AR1FGHM3/H Vishay General Semiconductor - Diodes Division ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
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AR1FGHM3/H AR1FGHM3/H Vishay General Semiconductor - Diodes Division ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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AR1FG-M3/H AR1FG-M3/H Vishay General Semiconductor - Diodes Division ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
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AR1FG-M3/H AR1FG-M3/H Vishay General Semiconductor - Diodes Division ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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VS-16TTS12STRL-M3 VS-16TTS12STRL-M3 Vishay General Semiconductor - Diodes Division vs-16tts08s-m3.pdf Description: SCR 1.2KV 16A TO-263AB (D2PAK)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 16 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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800+1.8 EUR
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VS-16TTS12STRL-M3 VS-16TTS12STRL-M3 Vishay General Semiconductor - Diodes Division vs-16tts08s-m3.pdf Description: SCR 1.2KV 16A TO-263AB (D2PAK)
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Voltage - Off State: 1.2 kV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - On State (It (RMS)) (Max): 16 A
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SML4738AHE3_A/H SML4738AHE3_A/H Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 8.2V 1W DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4.5 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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SML4738AHE3_A/H SML4738AHE3_A/H Vishay General Semiconductor - Diodes Division sml4738.pdf Description: DIODE ZENER 8.2V 1W DO214AC
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4.5 Ohms
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SM6T33AHM3_A/H SM6T33AHM3_A/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SM6T33AHM3_A/H SM6T33AHM3_A/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33AHM3_B/H SM6T33AHM3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SM6T33AHE3_B/I SM6T33AHE3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SM6T33AHE3_B/H SM6T33AHE3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SM6T33AHM3_B/I SM6T33AHM3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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SM6T33CAHM3_B/H SM6T33CAHM3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33CAHE3_B/H SM6T33CAHE3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33CAHM3_B/I SM6T33CAHM3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33CAHE3_B/I SM6T33CAHE3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V15K150CHM3/H V15K150CHM3/H Vishay General Semiconductor - Diodes Division v15k150c.pdf Description: 15A, 150V, FLATPAK TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
auf Bestellung 3000 Stücke:
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V15K150CHM3/H V15K150CHM3/H Vishay General Semiconductor - Diodes Division v15k150c.pdf Description: 15A, 150V, FLATPAK TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
auf Bestellung 3000 Stücke:
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V15K150C-M3/H V15K150C-M3/H Vishay General Semiconductor - Diodes Division v15k150c.pdf Description: DIODE ARR SCHOTT 150V 3.2A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Qualification: AEC-Q101
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1500+0.74 EUR
3000+0.69 EUR
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V15K150C-M3/H V15K150C-M3/H Vishay General Semiconductor - Diodes Division v15k150c.pdf Description: DIODE ARR SCHOTT 150V 3.2A FLTPK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Qualification: AEC-Q101
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16+1.38 EUR
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500+0.9 EUR
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V30DM153C-M3/I V30DM153C-M3/I Vishay General Semiconductor - Diodes Division v30dm153c.pdf Description: DUAL 150V, 30A TMBS (TRENCH MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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V30DM153C-M3/I V30DM153C-M3/I Vishay General Semiconductor - Diodes Division v30dm153c.pdf Description: DUAL 150V, 30A TMBS (TRENCH MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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V30DM153CHM3/I V30DM153CHM3/I Vishay General Semiconductor - Diodes Division v30dm153c.pdf Description: DUAL 150V, 30A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Tape & Reel (TR)
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V30DM153CHM3/I V30DM153CHM3/I Vishay General Semiconductor - Diodes Division v30dm153c.pdf Description: DUAL 150V, 30A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
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V30DM150CHM3/I V30DM150CHM3/I Vishay General Semiconductor - Diodes Division v30dm150c.pdf Description: DIODE ARRAY SCHOTT 150V TO263AC
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V30DM150CHM3/I V30DM150CHM3/I Vishay General Semiconductor - Diodes Division v30dm150c.pdf Description: DIODE ARRAY SCHOTT 150V TO263AC
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
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7+3.42 EUR
10+3.06 EUR
100+2.46 EUR
500+2.02 EUR
1000+1.8 EUR
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MBRB1060HE3_B/P MBRB1060HE3_B/P Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 60V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB1060HE3_B/I MBRB1060HE3_B/I Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 60V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE16AHE3_B/C 1.5KE16AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 13.6VWM 22.5VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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MSE07PJHM3/89A MSE07PJHM3/89A Vishay General Semiconductor - Diodes Division mse07pb.pdf Description: DIODE GP 600V 700MA MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 22500 Stücke:
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9000+0.13 EUR
13500+0.11 EUR
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MSE07PJHM3/89A MSE07PJHM3/89A Vishay General Semiconductor - Diodes Division mse07pb.pdf Description: DIODE GP 600V 700MA MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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500+0.2 EUR
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MSE07PG-M3/89A MSE07PG-M3/89A Vishay General Semiconductor - Diodes Division mse07pb.pdf Description: DIODE GP 400V 700MA MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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MSE07PG-M3/89A MSE07PG-M3/89A Vishay General Semiconductor - Diodes Division mse07pb.pdf Description: DIODE GP 400V 700MA MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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500+0.12 EUR
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MSE1PBHM3/I MSE1PBHM3/I Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE GEN PURP 100V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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MSE1PBHM3/I MSE1PBHM3/I Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE GEN PURP 100V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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MSE07PDHM3/89A MSE07PDHM3/89A Vishay General Semiconductor - Diodes Division mse07pb.pdf Description: DIODE GP 200V 700MA MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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MSE07PDHM3/89A MSE07PDHM3/89A Vishay General Semiconductor - Diodes Division mse07pb.pdf Description: DIODE GP 200V 700MA MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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MSE07PBHM3/89A MSE07PBHM3/89A Vishay General Semiconductor - Diodes Division mse07pb.pdf Description: DIODE GP 100V 700MA MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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MSE07PBHM3/89A MSE07PBHM3/89A Vishay General Semiconductor - Diodes Division mse07pb.pdf Description: DIODE GP 100V 700MA MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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SML4752AHE3_A/H sml4738.pdf
SML4752AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 1W DO214AC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 33 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
Power - Max: 1 W
Part Status: Active
auf Bestellung 1773 Stücke:
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19+1.11 EUR
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VSSAF5M6-M3/I vssaf5m6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
auf Bestellung 14000 Stücke:
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14000+0.26 EUR
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VSSAF5M6-M3/I vssaf5m6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 5A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
auf Bestellung 14000 Stücke:
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AnzahlPrivatkunde
23+0.94 EUR
28+0.76 EUR
100+0.52 EUR
500+0.39 EUR
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2000+0.26 EUR
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V3PM6-M3/I v3pm6.pdf
V3PM6-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
10000+0.21 EUR
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V3PM6-M3/I v3pm6.pdf
V3PM6-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
auf Bestellung 19954 Stücke:
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AnzahlPrivatkunde
28+0.77 EUR
34+0.63 EUR
100+0.43 EUR
500+0.32 EUR
1000+0.24 EUR
2000+0.23 EUR
5000+0.21 EUR
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VSSAF3M6-M3/H vssaf3m6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
auf Bestellung 10500 Stücke:
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AnzahlPrivatkunde
3500+0.26 EUR
7000+0.25 EUR
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VSSAF3M6-M3/H vssaf3m6.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
auf Bestellung 12960 Stücke:
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AnzahlPrivatkunde
24+0.9 EUR
29+0.73 EUR
100+0.5 EUR
500+0.37 EUR
1000+0.27 EUR
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VS-125NQ015PBF vs-125nq015pbf.pdf
VS-125NQ015PBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 120A D-67
Packaging: Bulk
Package / Case: D-67 HALF-PAK
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 7700pF @ 5V, 1MHz
Current - Average Rectified (Io): 120A
Supplier Device Package: D-67 HALF-PAK
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 120 A
Current - Reverse Leakage @ Vr: 40 mA @ 15 V
auf Bestellung 14 Stücke:
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AnzahlPrivatkunde
1+35.3 EUR
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1.5KE75CAHE3_B/C 15ke.pdf
1.5KE75CAHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 64.1VWM 103VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 64.1V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 71.3V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5246B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5246B-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5246B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5246B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
6000+0.11 EUR
9000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
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G3SBA60-E3/45 g3sba20.pdf
G3SBA60-E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 2.3A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Current - Average Rectified (Io): 2.3 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Produkt ist nicht verfügbar
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SM8S12CAHM3/I sm8s10cathrusm8s85ca.pdf
SM8S12CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 332A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+3.01 EUR
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SM8S12CAHM3/I sm8s10cathrusm8s85ca.pdf
SM8S12CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 332A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.91 EUR
10+5.01 EUR
100+3.68 EUR
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SM8S12A-001HE3_A/I sm8s.pdf
SM8S12A-001HE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 332A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SM8S12A-001HE3/2D SM8S10_thru_SM8S43A._Aug.31,2016.pdf
SM8S12A-001HE3/2D
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 332A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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AR1PG-M3/84A ar1pm.pdf
AR1PG-M3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO220AA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-220AA (SMP)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-220AA
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
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AR1FG-M3/I ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf
AR1FG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.17 EUR
Mindestbestellmenge: 10000 Stücke
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AR1FG-M3/I ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf
AR1FG-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.86 EUR
35+0.61 EUR
100+0.31 EUR
500+0.27 EUR
1000+0.21 EUR
2000+0.19 EUR
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AR1FGHM3/H ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf
AR1FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000 Stücke
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AR1FGHM3/H ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf
AR1FGHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
34+0.62 EUR
100+0.31 EUR
500+0.27 EUR
1000+0.21 EUR
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AR1FG-M3/H ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf
AR1FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.11 EUR
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AR1FG-M3/H ar1fd_ar1fg_ar1fj_ar1fk_ar1f.pdf
AR1FG-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A DO219AB
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12.6pF @ 4V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 140 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 17864 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
41+0.52 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.18 EUR
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VS-16TTS12STRL-M3 vs-16tts08s-m3.pdf
VS-16TTS12STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 16A TO-263AB (D2PAK)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 16 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.8 EUR
Mindestbestellmenge: 800 Stücke
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VS-16TTS12STRL-M3 vs-16tts08s-m3.pdf
VS-16TTS12STRL-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 16A TO-263AB (D2PAK)
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.4 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 10 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A @ 50Hz
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Voltage - Off State: 1.2 kV
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - On State (It (RMS)) (Max): 16 A
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.26 EUR
10+3.42 EUR
100+2.36 EUR
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SML4738AHE3_A/H sml4738.pdf
SML4738AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1W DO214AC
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4.5 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SML4738AHE3_A/H sml4738.pdf
SML4738AHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1W DO214AC
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Power - Max: 1 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4.5 Ohms
auf Bestellung 1677 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.18 EUR
21+1.01 EUR
100+0.75 EUR
500+0.6 EUR
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SM6T33AHM3_A/H sm6t.pdf
SM6T33AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33AHM3_A/H sm6t.pdf
SM6T33AHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33AHM3_B/H sm6t.pdf
SM6T33AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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SM6T33AHE3_B/I sm6t.pdf
SM6T33AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33AHE3_B/H sm6t.pdf
SM6T33AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33AHM3_B/I sm6t.pdf
SM6T33AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33CAHM3_B/H sm6t.pdf
SM6T33CAHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33CAHE3_B/H sm6t.pdf
SM6T33CAHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T33CAHM3_B/I sm6t.pdf
SM6T33CAHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6400 Stücke
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SM6T33CAHE3_B/I sm6t.pdf
SM6T33CAHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.1A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6400 Stücke
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V15K150CHM3/H v15k150c.pdf
V15K150CHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 15A, 150V, FLATPAK TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.99 EUR
Mindestbestellmenge: 1500 Stücke
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V15K150CHM3/H v15k150c.pdf
V15K150CHM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 15A, 150V, FLATPAK TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
12+1.82 EUR
100+1.43 EUR
500+1.18 EUR
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V15K150C-M3/H v15k150c.pdf
V15K150C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 3.2A FLTPK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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1500+0.74 EUR
3000+0.69 EUR
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V15K150C-M3/H v15k150c.pdf
V15K150C-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 3.2A FLTPK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.2A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 7.5 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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16+1.38 EUR
100+1.07 EUR
500+0.9 EUR
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V30DM153C-M3/I v30dm153c.pdf
V30DM153C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DUAL 150V, 30A TMBS (TRENCH MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 2000 Stücke:
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2000+1.55 EUR
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V30DM153C-M3/I v30dm153c.pdf
V30DM153C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DUAL 150V, 30A TMBS (TRENCH MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
auf Bestellung 2000 Stücke:
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7+3.28 EUR
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100+2.28 EUR
500+1.89 EUR
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V30DM153CHM3/I v30dm153c.pdf
V30DM153CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DUAL 150V, 30A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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2000+2.13 EUR
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V30DM153CHM3/I v30dm153c.pdf
V30DM153CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DUAL 150V, 30A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
6+4.05 EUR
10+3.63 EUR
100+2.92 EUR
500+2.39 EUR
1000+2.13 EUR
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V30DM150CHM3/I v30dm150c.pdf
V30DM150CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 150V TO263AC
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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V30DM150CHM3/I v30dm150c.pdf
V30DM150CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 150V TO263AC
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
auf Bestellung 1978 Stücke:
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AnzahlPrivatkunde
7+3.42 EUR
10+3.06 EUR
100+2.46 EUR
500+2.02 EUR
1000+1.8 EUR
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MBRB1060HE3_B/P mbr10xx.pdf
MBRB1060HE3_B/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBRB1060HE3_B/I mbr10xx.pdf
MBRB1060HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1.5KE16AHE3_B/C 15ke.pdf
1.5KE16AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13.6VWM 22.5VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 70A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MSE07PJHM3/89A mse07pb.pdf
MSE07PJHM3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 700MA MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4500+0.14 EUR
9000+0.13 EUR
13500+0.11 EUR
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MSE07PJHM3/89A mse07pb.pdf
MSE07PJHM3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 700MA MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 30695 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
38+0.55 EUR
100+0.31 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.14 EUR
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MSE07PG-M3/89A mse07pb.pdf
MSE07PG-M3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 700MA MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4500+0.074 EUR
9000+0.058 EUR
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MSE07PG-M3/89A mse07pb.pdf
MSE07PG-M3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 400V 700MA MICROSMP
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 18046 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
70+0.3 EUR
144+0.14 EUR
500+0.12 EUR
1000+0.084 EUR
2000+0.074 EUR
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MSE1PBHM3/I mse1pj.pdf
MSE1PBHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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MSE1PBHM3/I mse1pj.pdf
MSE1PBHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 15360 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.27 EUR
10+2.93 EUR
100+2.28 EUR
500+1.88 EUR
1000+1.55 EUR
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MSE07PDHM3/89A mse07pb.pdf
MSE07PDHM3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 700MA MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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MSE07PDHM3/89A mse07pb.pdf
MSE07PDHM3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 200V 700MA MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
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MSE07PBHM3/89A mse07pb.pdf
MSE07PBHM3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 700MA MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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MSE07PBHM3/89A mse07pb.pdf
MSE07PBHM3/89A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 700MA MICROSMP
Packaging: Cut Tape (CT)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 700mA
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 700 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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