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BYS459B-1500SE3/81 Vishay General Semiconductor - Diodes Division BYS459(B,F)-1500S.pdf Description: DIODE GEN PURP 1.5KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
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BYS459B-1500E3/45 Vishay General Semiconductor - Diodes Division BYS459B,F-1500.pdf Description: DIODE GP 1.5KV 6.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 6.5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
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BYS459B-1500SE3/45 Vishay General Semiconductor - Diodes Division BYS459(B,F)-1500S.pdf Description: DIODE GEN PURP 1.5KV 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
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MMSZ5250B-HE3_A-18 MMSZ5250B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
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MMSZ5250B-HE3_A-08 MMSZ5250B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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MMSZ5250C-HE3_A-08 MMSZ5250C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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MMSZ5250C-HE3_A-18 MMSZ5250C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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1N4249GP-E3/54 1N4249GP-E3/54 Vishay General Semiconductor - Diodes Division 1n4245gp.pdf Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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1N4249GP-E3/54 1N4249GP-E3/54 Vishay General Semiconductor - Diodes Division 1n4245gp.pdf Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
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1.5KE150AHE3_B/C 1.5KE150AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 128VWM 207VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SS36HE3_B/I SS36HE3_B/I Vishay General Semiconductor - Diodes Division ss32.pdf Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SS34HE3_B/I SS34HE3_B/I Vishay General Semiconductor - Diodes Division ss32.pdf Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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VS-GT250SA60S VS-GT250SA60S Vishay General Semiconductor - Diodes Division vs-gt250sa60s.pdf Description: IGBT MOD 600V 359A 750W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.16V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 359 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 24.2 nF @ 25 V
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SMBJ150AHE3_B/I SMBJ150AHE3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 150VWM 243VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ150AHM3_B/I SMBJ150AHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 150VWM 243VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ150AHE3_B/H SMBJ150AHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 150VWM 243VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ160AHM3_B/I SMBJ160AHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ160AHE3_B/I SMBJ160AHE3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ160AHM3_B/H SMBJ160AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ160AHE3_B/H SMBJ160AHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Z4KE180A-E3/54 Z4KE180A-E3/54 Vishay General Semiconductor - Diodes Division Z4KE100A_thru_200A.pdf Description: DIODE ZENER 180V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 136.8 V
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Z4KE180A-E3/54 Z4KE180A-E3/54 Vishay General Semiconductor - Diodes Division Z4KE100A_thru_200A.pdf Description: DIODE ZENER 180V 1.5W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 136.8 V
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VS-VSUD505CW60 VS-VSUD505CW60 Vishay General Semiconductor - Diodes Division vs-vsud505cw60.pdf Description: DIODE MODULE GP 600V 572A TO244
Current - Reverse Leakage @ Vr: 820 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.355 V @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 572A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 179 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Box
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VS-VSUD510CW60 VS-VSUD510CW60 Vishay General Semiconductor - Diodes Division vs-vsud510cw60.pdf Description: DIODE MODULE GP 600V 619A TO244
Current - Reverse Leakage @ Vr: 330 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 619A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Box
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BYW53-TAP BYW53-TAP Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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BYW53-TAP BYW53-TAP Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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SMBJ14AHM3_B/I SMBJ14AHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 14VWM 23.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ14AHE3_B/I SMBJ14AHE3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 14VWM 23.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ14AHM3_B/H SMBJ14AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 14VWM 23.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ14AHE3_B/H SMBJ14AHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 14VWM 23.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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S1GHE3_A/I S1GHE3_A/I Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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S1GHE3_A/I S1GHE3_A/I Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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S1GHE3_A/H S1GHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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S1GHE3_A/H S1GHE3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 400V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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SM6T18AHE3_B/I SM6T18AHE3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 15.3VWM 25.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM6T18AHM3_B/I SM6T18AHM3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 15.3VWM 25.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM6T18AHE3_B/H SM6T18AHE3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 15.3VWM 25.2V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM6T18AHM3_B/H SM6T18AHM3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 15.3VWM 25.2V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZD27C5V6P-E3-18 BZD27C5V6P-E3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 5.6V 800MW DO219AB
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
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BZD27C5V6P-E3-18 BZD27C5V6P-E3-18 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 5.6V 800MW DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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BZD27C5V6P-M3-08 BZD27C5V6P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZD27C5V6P-M3-08 BZD27C5V6P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZD27C5V1P-M3-08 BZD27C5V1P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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BZD27C5V1P-M3-08 BZD27C5V1P-M3-08 Vishay General Semiconductor - Diodes Division BZD27-M_Series.pdf Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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VS-C4ZU3006FP-M3 VS-C4ZU3006FP-M3 Vishay General Semiconductor - Diodes Division vs-c4zu3006fp-m3.pdf Description: DIODE ARRAY GP 600V 15A TO-3PF
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 73 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3PF
Packaging: Tube
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VS-C4ZU3006FP-E3 Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 600V 15A TO3PF
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 73 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SC-94
Packaging: Tube
Produkt ist nicht verfügbar
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GBPC12005-E4/51 GBPC12005-E4/51 Vishay General Semiconductor - Diodes Division gbpc12.pdf Description: BRIDGE RECT 1P 50V 12A GBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 12 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Box
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SB140-E3/53 SB140-E3/53 Vishay General Semiconductor - Diodes Division sb110.pdf Description: DIODE SCHOTTKY 40V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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SB140-E3/53 SB140-E3/53 Vishay General Semiconductor - Diodes Division sb110.pdf Description: DIODE SCHOTTKY 40V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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P6SMB440A-M3/5B P6SMB440A-M3/5B Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 376VWM 602VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 602V
Voltage - Breakdown (Min): 418V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 376V
Current - Peak Pulse (10/1000µs): 1A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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P6SMB440AHM3_D/I P6SMB440AHM3_D/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,440V 5%,UNIDIR,SMB TVS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 602V
Voltage - Breakdown (Min): 418V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 376V
Current - Peak Pulse (10/1000µs): 1A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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P6SMB440AHM3_D/H P6SMB440AHM3_D/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,440V 5%,UNIDIR,SMB TVS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 602V
Voltage - Breakdown (Min): 418V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 376V
Current - Peak Pulse (10/1000µs): 1A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
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VLIN3333-02G-E3-18 VLIN3333-02G-E3-18 Vishay General Semiconductor - Diodes Division vlin3333-02g.pdf Description: ESD PROTECTION DIODE SOD323
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 57V
Voltage - Breakdown (Min): 36V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 33V (Max)
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Capacitance @ Frequency: 11pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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VLIN3333-02GHE3-18 VLIN3333-02GHE3-18 Vishay General Semiconductor - Diodes Division vlin3333-02g.pdf Description: ESD PROTECTION DIODE SOD323
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 33V (Max)
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Capacitance @ Frequency: 11pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 57V
Voltage - Breakdown (Min): 36V
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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TZMB3V6-GS08 TZMB3V6-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 3.6V 500MW SOD80
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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TZMB3V6-GS08 TZMB3V6-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 3.6V 500MW SOD80
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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TZM5247B-GS08 TZM5247B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 17V 500MW SOD80
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 17 V
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TZM5247B-GS08 TZM5247B-GS08 Vishay General Semiconductor - Diodes Division tzm5221.pdf Description: DIODE ZENER 17V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 17 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
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MMSZ5231B-HE3_A-08 MMSZ5231B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
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MMSZ5231C-HE3_A-08 MMSZ5231C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
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BYS459B-1500SE3/81 BYS459(B,F)-1500S.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.5KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
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BYS459B-1500E3/45 BYS459B,F-1500.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.5KV 6.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Technology: Standard
Current - Average Rectified (Io): 6.5A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
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BYS459B-1500SE3/45 BYS459(B,F)-1500S.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.5KV 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6.5 A
Current - Reverse Leakage @ Vr: 250 µA @ 1500 V
Produkt ist nicht verfügbar
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MMSZ5250B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5250B-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MMSZ5250B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5250B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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MMSZ5250C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5250C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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MMSZ5250C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5250C-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW SOD123
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 25 Ohms
Voltage - Zener (Nom) (Vz): 20 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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1N4249GP-E3/54 1n4245gp.pdf
1N4249GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 5500 Stücke:
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1N4249GP-E3/54 1n4245gp.pdf
1N4249GP-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 9362 Stücke:
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23+0.92 EUR
27+0.79 EUR
100+0.55 EUR
500+0.43 EUR
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2000+0.31 EUR
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1.5KE150AHE3_B/C 15ke.pdf
1.5KE150AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 128VWM 207VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.6A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SS36HE3_B/I ss32.pdf
SS36HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 12023 Stücke:
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10+2.15 EUR
16+1.34 EUR
100+0.88 EUR
500+0.69 EUR
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SS34HE3_B/I ss32.pdf
SS34HE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 3487 Stücke:
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10+2.28 EUR
15+1.43 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.67 EUR
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VS-GT250SA60S vs-gt250sa60s.pdf
VS-GT250SA60S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 359A 750W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.16V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 359 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 24.2 nF @ 25 V
auf Bestellung 146 Stücke:
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1+77.72 EUR
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SMBJ150AHE3_B/I smbj.pdf
SMBJ150AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 243VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ150AHM3_B/I smbj.pdf
SMBJ150AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 243VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ150AHE3_B/H smbj.pdf
SMBJ150AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 243VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.5A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ160AHM3_B/I smbj.pdf
SMBJ160AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ160AHE3_B/I smbj.pdf
SMBJ160AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ160AHM3_B/H smbj.pdf
SMBJ160AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ160AHE3_B/H smbj.pdf
SMBJ160AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 160VWM 259VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.3A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Z4KE180A-E3/54 Z4KE100A_thru_200A.pdf
Z4KE180A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 1.5W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 136.8 V
auf Bestellung 5500 Stücke:
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5500+0.23 EUR
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Z4KE180A-E3/54 Z4KE100A_thru_200A.pdf
Z4KE180A-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 1.5W DO204AL
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 1300 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 500 nA @ 136.8 V
auf Bestellung 9215 Stücke:
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28+0.77 EUR
33+0.64 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.27 EUR
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VS-VSUD505CW60 vs-vsud505cw60.pdf
VS-VSUD505CW60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 572A TO244
Current - Reverse Leakage @ Vr: 820 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.355 V @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 572A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 179 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Box
auf Bestellung 1 Stücke:
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VS-VSUD510CW60 vs-vsud510cw60.pdf
VS-VSUD510CW60
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 600V 619A TO244
Current - Reverse Leakage @ Vr: 330 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 250 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-244
Current - Average Rectified (Io) (per Diode): 619A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 270 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Packaging: Box
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1+105.05 EUR
10+98.69 EUR
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BYW53-TAP byw52.pdf
BYW53-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 4547 Stücke:
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13+1.7 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
1000+0.48 EUR
2000+0.43 EUR
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BYW53-TAP byw52.pdf
BYW53-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20000 Stücke:
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AnzahlPrivatkunde
5000+0.33 EUR
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SMBJ14AHM3_B/I smbj.pdf
SMBJ14AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ14AHE3_B/I smbj.pdf
SMBJ14AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ14AHM3_B/H smbj.pdf
SMBJ14AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ14AHE3_B/H smbj.pdf
SMBJ14AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 14VWM 23.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S1GHE3_A/I s1.pdf
S1GHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7500+0.084 EUR
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S1GHE3_A/I s1.pdf
S1GHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 61958 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
95+0.23 EUR
117+0.18 EUR
500+0.15 EUR
1000+0.14 EUR
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S1GHE3_A/H s1.pdf
S1GHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.11 EUR
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S1GHE3_A/H s1.pdf
S1GHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO214AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 4046 Stücke:
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42+0.5 EUR
63+0.33 EUR
101+0.21 EUR
500+0.18 EUR
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SM6T18AHE3_B/I sm6t.pdf
SM6T18AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T18AHM3_B/I sm6t.pdf
SM6T18AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T18AHE3_B/H sm6t.pdf
SM6T18AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SM6T18AHM3_B/H sm6t.pdf
SM6T18AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZD27C5V6P-E3-18 bzd27series.pdf
BZD27C5V6P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 800MW DO219AB
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
auf Bestellung 50000 Stücke:
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AnzahlPrivatkunde
10000+0.14 EUR
50000+0.12 EUR
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BZD27C5V6P-E3-18 bzd27series.pdf
BZD27C5V6P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 800MW DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 800 mW
Supplier Device Package: DO-219AB (SMF)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
39+0.55 EUR
100+0.27 EUR
500+0.25 EUR
1000+0.19 EUR
2000+0.17 EUR
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BZD27C5V6P-M3-08 BZD27-M_Series.pdf
BZD27C5V6P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.24 EUR
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BZD27C5V6P-M3-08 BZD27-M_Series.pdf
BZD27C5V6P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 15603 Stücke:
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AnzahlPrivatkunde
77+0.27 EUR
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BZD27C5V1P-M3-08 BZD27-M_Series.pdf
BZD27C5V1P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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BZD27C5V1P-M3-08 BZD27-M_Series.pdf
BZD27C5V1P-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 29164 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
39+0.55 EUR
100+0.27 EUR
500+0.25 EUR
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VS-C4ZU3006FP-M3 vs-c4zu3006fp-m3.pdf
VS-C4ZU3006FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO-3PF
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 73 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3PF
Packaging: Tube
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.25 EUR
25+6.53 EUR
100+5.4 EUR
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VS-C4ZU3006FP-E3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO3PF
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 73 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SC-94
Packaging: Tube
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GBPC12005-E4/51 gbpc12.pdf
GBPC12005-E4/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 50V 12A GBPC-W
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Average Rectified (Io): 12 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: GBPC-W
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Packaging: Box
auf Bestellung 186 Stücke:
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3+10 EUR
10+6.99 EUR
100+5.21 EUR
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SB140-E3/53 sb110.pdf
SB140-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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14+1.59 EUR
22+1 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
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SB140-E3/53 sb110.pdf
SB140-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO204AL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
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3000+0.38 EUR
6000+0.35 EUR
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P6SMB440A-M3/5B p6smb.pdf
P6SMB440A-M3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 376VWM 602VC DO214AA
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 602V
Voltage - Breakdown (Min): 418V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMBJ)
Voltage - Reverse Standoff (Typ): 376V
Current - Peak Pulse (10/1000µs): 1A
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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P6SMB440AHM3_D/I p6smb.pdf
P6SMB440AHM3_D/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,440V 5%,UNIDIR,SMB TVS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 602V
Voltage - Breakdown (Min): 418V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 376V
Current - Peak Pulse (10/1000µs): 1A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P6SMB440AHM3_D/H p6smb.pdf
P6SMB440AHM3_D/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 600W,440V 5%,UNIDIR,SMB TVS
Power Line Protection: No
Power - Peak Pulse: 600W
Voltage - Clamping (Max) @ Ipp: 602V
Voltage - Breakdown (Min): 418V
Unidirectional Channels: 1
Supplier Device Package: DO-214AA (SMB)
Voltage - Reverse Standoff (Typ): 376V
Current - Peak Pulse (10/1000µs): 1A
Applications: Automotive, Telecom
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Bulk
Produkt ist nicht verfügbar
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VLIN3333-02G-E3-18 vlin3333-02g.pdf
VLIN3333-02G-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ESD PROTECTION DIODE SOD323
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 57V
Voltage - Breakdown (Min): 36V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 33V (Max)
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Capacitance @ Frequency: 11pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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VLIN3333-02GHE3-18 vlin3333-02g.pdf
VLIN3333-02GHE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: ESD PROTECTION DIODE SOD323
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 33V (Max)
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Capacitance @ Frequency: 11pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 57V
Voltage - Breakdown (Min): 36V
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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TZMB3V6-GS08 tzm.pdf
TZMB3V6-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW SOD80
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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2500+0.1 EUR
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TZMB3V6-GS08 tzm.pdf
TZMB3V6-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW SOD80
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±2%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 10249 Stücke:
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63+0.33 EUR
96+0.21 EUR
205+0.1 EUR
500+0.093 EUR
1000+0.092 EUR
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TZM5247B-GS08 tzm5221.pdf
TZM5247B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW SOD80
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 17 V
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TZM5247B-GS08 tzm5221.pdf
TZM5247B-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17V 500MW SOD80
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: SOD-80 MiniMELF
Impedance (Max) (Zzt): 19 Ohms
Voltage - Zener (Nom) (Vz): 17 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 5269 Stücke:
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91+0.23 EUR
127+0.17 EUR
250+0.083 EUR
500+0.082 EUR
1000+0.08 EUR
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MMSZ5231B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5231B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
3000+0.15 EUR
6000+0.14 EUR
9000+0.13 EUR
15000+0.12 EUR
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MMSZ5231C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5231C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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