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BZG03B130-M3_A-18 BZG03B130-M3_A-18 Vishay General Semiconductor - Diodes Division bzg03b-m-series.pdf Description: DIODE ZENER 130V 1.25W DO214AC
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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BZG03B130-M3_A-08 BZG03B130-M3_A-08 Vishay General Semiconductor - Diodes Division bzg03b-m-series.pdf Description: DIODE ZENER 130V 1.25W DO214AC
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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V12P104-M3/I V12P104-M3/I Vishay General Semiconductor - Diodes Division doc?98779 Description: RECTIFIER, 12A, 100V, TMBS SCHOT
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 490pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 175 µA @ 100 V
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V12P104-M3/I V12P104-M3/I Vishay General Semiconductor - Diodes Division doc?98779 Description: RECTIFIER, 12A, 100V, TMBS SCHOT
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 490pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 175 µA @ 100 V
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MMSZ4699-HE3_A-08 MMSZ4699-HE3_A-08 Vishay General Semiconductor - Diodes Division MMSZ4681_to_MMSZ4717_Rev2.0_2-18-20.pdf Description: DIODE ZENER 12V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
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VS-E5PH6012LHN3 VS-E5PH6012LHN3 Vishay General Semiconductor - Diodes Division vs-e5ph6012lhn3.pdf Description: DIODE STANDARD 1200V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
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SMF20A-HE3-18 SMF20A-HE3-18 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 20VWM 32.4VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 283pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMF20A-HE3-18 SMF20A-HE3-18 Vishay General Semiconductor - Diodes Division smf5v0atosmf58a.pdf Description: TVS DIODE 20VWM 32.4VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 283pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX55C62-TR BZX55C62-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 62V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Qualification: AEC-Q101
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BZX55C62-TR BZX55C62-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 62V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Qualification: AEC-Q101
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MBR1045 MBR1045 Vishay General Semiconductor - Diodes Division MBR%28B%291035_45.pdf Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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US1MHM3_A/H US1MHM3_A/H Vishay General Semiconductor - Diodes Division us1_test_dcicons.pdf Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-15CRH02-M3/I VS-15CRH02-M3/I Vishay General Semiconductor - Diodes Division doc?97375 Description: RECTIFIER, FRED, 2X7.5A, 200V, H
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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VS-15CRH02-M3/I VS-15CRH02-M3/I Vishay General Semiconductor - Diodes Division doc?97375 Description: RECTIFIER, FRED, 2X7.5A, 200V, H
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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VS-15CRH02HM3/I VS-15CRH02HM3/I Vishay General Semiconductor - Diodes Division doc?97383 Description: RECTIFIER, FRED, 2X7.5A, 200V, H
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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VS-15CRH02HM3/I VS-15CRH02HM3/I Vishay General Semiconductor - Diodes Division doc?97383 Description: RECTIFIER, FRED, 2X7.5A, 200V, H
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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VS-15CTQ035-M3 VS-15CTQ035-M3 Vishay General Semiconductor - Diodes Division vs-15ctq035_040_045-m3.pdf Description: DIODE ARR SCHOTT 35V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
Produkt ist nicht verfügbar
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15CTQ035 15CTQ035 Vishay General Semiconductor - Diodes Division 15CTQ035%2C40%2C45_Rev08.pdf Description: DIODE ARR SCHOT 35V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
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15CTQ045 15CTQ045 Vishay General Semiconductor - Diodes Division 15CTQ035%2C40%2C45_Rev08.pdf Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
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15CTQ045S 15CTQ045S Vishay General Semiconductor - Diodes Division 15CTQ%2CS%2C-1.pdf description Description: DIODE ARR SCHOT 45V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Produkt ist nicht verfügbar
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BYG22B-M3/TR BYG22B-M3/TR Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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BYG22B-M3/TR BYG22B-M3/TR Vishay General Semiconductor - Diodes Division byg22a.pdf Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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BYW34-TAP BYW34-TAP Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BZT52B15-G3-08 BZT52B15-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 15V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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BZT52B15-G3-08 BZT52B15-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 15V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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VS-8ETU12-M3 VS-8ETU12-M3 Vishay General Semiconductor - Diodes Division vs-8etu12-m3.pdf Description: DIODE STANDARD 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 144 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 8 A
Current - Reverse Leakage @ Vr: 55 µA @ 1200 V
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S8CQ-M3/I S8CQ-M3/I Vishay General Semiconductor - Diodes Division doc?98706 Description: RECTIFIER, 8A, 1200V, STANDARD R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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S8CQ-M3/I S8CQ-M3/I Vishay General Semiconductor - Diodes Division doc?98706 Description: RECTIFIER, 8A, 1200V, STANDARD R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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S8CQHM3/I S8CQHM3/I Vishay General Semiconductor - Diodes Division doc?98706 Description: RECTIFIER, 8A, 1200V, STANDARD R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S8CQHM3/I S8CQHM3/I Vishay General Semiconductor - Diodes Division doc?98706 Description: RECTIFIER, 8A, 1200V, STANDARD R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 3499 Stücke:
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MBRB20100CT MBRB20100CT Vishay General Semiconductor - Diodes Division MBR%28B%2920.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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1N4740A-T Vishay General Semiconductor - Diodes Division ds18007.pdf Description: DIODE ZENER 10V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR6045WT MBR6045WT Vishay General Semiconductor - Diodes Division MBR6045WT.pdf Description: DIODE ARR SCHOTT 45V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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1N4734A-T 1N4734A-T Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 5.6V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KBU8K-M3/A KBU8K-M3/A Vishay General Semiconductor - Diodes Division doc?34337 Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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KBU8G-M3/A KBU8G-M3/A Vishay General Semiconductor - Diodes Division doc?34347 Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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KBU6J-M3/A KBU6J-M3/A Vishay General Semiconductor - Diodes Division doc?34347 Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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MBR4060WT MBR4060WT Vishay General Semiconductor - Diodes Division MBR4060WT.pdf Description: DIODE ARR SCHOTT 60V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
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BZD17C12P-E3-18 BZD17C12P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 40000 Stücke:
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BZD17C12P-E3-18 BZD17C12P-E3-18 Vishay General Semiconductor - Diodes Division BZD17C3V6P%20thru%20BZD17C200P.pdf Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
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MBR2045CT MBR2045CT Vishay General Semiconductor - Diodes Division vs-mbr20cthn3.pdf Description: DIODE ARR SCHOTT 45V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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VS-3C02EJ07-M3/H VS-3C02EJ07-M3/H Vishay General Semiconductor - Diodes Division doc?97287 Description: RECTIFIER, SIC, 650V, 2A, SINGLE
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 12.5pF @ 400V, 1MHz
Voltage - Peak Reverse (Max): 650V
Supplier Device Package: DO-221AC (SlimSMA)
Current - Max: 2 A
Power Dissipation (Max): 12.5 W
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VS-3C02EJ07-M3/H VS-3C02EJ07-M3/H Vishay General Semiconductor - Diodes Division doc?97287 Description: RECTIFIER, SIC, 650V, 2A, SINGLE
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 12.5pF @ 400V, 1MHz
Voltage - Peak Reverse (Max): 650V
Supplier Device Package: DO-221AC (SlimSMA)
Current - Max: 2 A
Power Dissipation (Max): 12.5 W
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1.5KE180CAHE3_B/C 1.5KE180CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 154VWM 246VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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4SMF15CA-M3/H 4SMF15CA-M3/H Vishay General Semiconductor - Diodes Division doc?98831 Description: DIODE, TVS, BI-DIR, 400W, 15V, 5
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Supplier Device Package: DO-219AB (SMF)
Produkt ist nicht verfügbar
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4SMF15CA-M3/H 4SMF15CA-M3/H Vishay General Semiconductor - Diodes Division doc?98831 Description: DIODE, TVS, BI-DIR, 400W, 15V, 5
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Supplier Device Package: DO-219AB (SMF)
Produkt ist nicht verfügbar
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4SMF15CAHM3/I 4SMF15CAHM3/I Vishay General Semiconductor - Diodes Division doc?98831 Description: DIODE, TVS, BI-DIR, 400W, 15V, 5
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Supplier Device Package: DO-219AB (SMF)
Produkt ist nicht verfügbar
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4SMF15CAHM3/I 4SMF15CAHM3/I Vishay General Semiconductor - Diodes Division doc?98831 Description: DIODE, TVS, BI-DIR, 400W, 15V, 5
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Supplier Device Package: DO-219AB (SMF)
Produkt ist nicht verfügbar
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BZG03B130-M3_A-18 bzg03b-m-series.pdf
BZG03B130-M3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 130V 1.25W DO214AC
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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BZG03B130-M3_A-08 bzg03b-m-series.pdf
BZG03B130-M3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 130V 1.25W DO214AC
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 130 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Produkt ist nicht verfügbar
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V12P104-M3/I doc?98779
V12P104-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, 12A, 100V, TMBS SCHOT
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 490pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 175 µA @ 100 V
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V12P104-M3/I doc?98779
V12P104-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, 12A, 100V, TMBS SCHOT
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 490pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 175 µA @ 100 V
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18+1 EUR
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MMSZ4699-HE3_A-08 MMSZ4681_to_MMSZ4717_Rev2.0_2-18-20.pdf
MMSZ4699-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
auf Bestellung 14750 Stücke:
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Anzahl Preis
36+0.49 EUR
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100+0.21 EUR
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VS-E5PH6012LHN3 vs-e5ph6012lhn3.pdf
VS-E5PH6012LHN3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 445 Stücke:
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Anzahl Preis
3+7.69 EUR
25+4.55 EUR
100+4.13 EUR
Mindestbestellmenge: 3
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SMF20A-HE3-18 smf5v0atosmf58a.pdf
SMF20A-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 283pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.13 EUR
20000+0.12 EUR
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SMF20A-HE3-18 smf5v0atosmf58a.pdf
SMF20A-HE3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 283pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX55C62-TR bzx55.pdf
BZX55C62-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.05 EUR
20000+0.045 EUR
30000+0.036 EUR
Mindestbestellmenge: 10000
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BZX55C62-TR bzx55.pdf
BZX55C62-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 47 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
96+0.18 EUR
154+0.11 EUR
500+0.084 EUR
1000+0.074 EUR
2000+0.065 EUR
5000+0.056 EUR
Mindestbestellmenge: 59
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MBR1045 MBR%28B%291035_45.pdf
MBR1045
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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US1MHM3_A/H us1_test_dcicons.pdf
US1MHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-15CRH02-M3/I doc?97375
VS-15CRH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, FRED, 2X7.5A, 200V, H
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.39 EUR
Mindestbestellmenge: 6000
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VS-15CRH02-M3/I doc?97375
VS-15CRH02-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, FRED, 2X7.5A, 200V, H
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
1000+0.48 EUR
2000+0.44 EUR
Mindestbestellmenge: 11
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VS-15CRH02HM3/I doc?97383
VS-15CRH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, FRED, 2X7.5A, 200V, H
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+0.57 EUR
Mindestbestellmenge: 6000
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VS-15CRH02HM3/I doc?97383
VS-15CRH02HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, FRED, 2X7.5A, 200V, H
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: DFN6546A
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
2000+0.68 EUR
Mindestbestellmenge: 8
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VS-15CTQ035-M3 vs-15ctq035_040_045-m3.pdf
VS-15CTQ035-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
Produkt ist nicht verfügbar
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15CTQ035 15CTQ035%2C40%2C45_Rev08.pdf
15CTQ035
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 35V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 35 V
Produkt ist nicht verfügbar
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15CTQ045 15CTQ035%2C40%2C45_Rev08.pdf
15CTQ045
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 7.5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Produkt ist nicht verfügbar
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15CTQ045S description 15CTQ%2CS%2C-1.pdf
15CTQ045S
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 45V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Produkt ist nicht verfügbar
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BYG22B-M3/TR byg22a.pdf
BYG22B-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.3 EUR
3600+0.26 EUR
9000+0.24 EUR
Mindestbestellmenge: 1800
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BYG22B-M3/TR byg22a.pdf
BYG22B-M3/TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
Mindestbestellmenge: 15
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BYW34-TAP byw32.pdf
BYW34-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Tape & Box (TB)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.36 EUR
10000+0.33 EUR
15000+0.32 EUR
Mindestbestellmenge: 5000
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BZT52B15-G3-08 bzt52-g.pdf
BZT52B15-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.086 EUR
6000+0.077 EUR
9000+0.073 EUR
15000+0.061 EUR
Mindestbestellmenge: 3000
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BZT52B15-G3-08 bzt52-g.pdf
BZT52B15-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
51+0.35 EUR
100+0.22 EUR
500+0.14 EUR
1000+0.1 EUR
Mindestbestellmenge: 35
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VS-8ETU12-M3 vs-8etu12-m3.pdf
VS-8ETU12-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 144 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 8 A
Current - Reverse Leakage @ Vr: 55 µA @ 1200 V
auf Bestellung 7885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
50+0.77 EUR
100+0.74 EUR
500+0.72 EUR
Mindestbestellmenge: 10
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S8CQ-M3/I doc?98706
S8CQ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, 8A, 1200V, STANDARD R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.38 EUR
Mindestbestellmenge: 3500
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S8CQ-M3/I doc?98706
S8CQ-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, 8A, 1200V, STANDARD R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
19+0.97 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.44 EUR
Mindestbestellmenge: 12
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S8CQHM3/I doc?98706
S8CQHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, 8A, 1200V, STANDARD R
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S8CQHM3/I doc?98706
S8CQHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, 8A, 1200V, STANDARD R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 3499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
15+1.25 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 9
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MBRB20100CT MBR%28B%2920.pdf
MBRB20100CT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
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1N4740A-T ds18007.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR6045WT MBR6045WT.pdf
MBR6045WT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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1N4734A-T 1n4728a.pdf
1N4734A-T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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KBU8K-M3/A doc?34337
KBU8K-M3/A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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KBU8G-M3/A doc?34347
KBU8G-M3/A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
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KBU6J-M3/A doc?34347
KBU6J-M3/A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
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MBR4060WT MBR4060WT.pdf
MBR4060WT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Produkt ist nicht verfügbar
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BZD17C12P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C12P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
20000+0.1 EUR
30000+0.096 EUR
Mindestbestellmenge: 10000
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BZD17C12P-E3-18 BZD17C3V6P%20thru%20BZD17C200P.pdf
BZD17C12P-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 49405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.14 EUR
5000+0.12 EUR
Mindestbestellmenge: 30
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MBR2045CT vs-mbr20cthn3.pdf
MBR2045CT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Produkt ist nicht verfügbar
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VS-3C02EJ07-M3/H doc?97287
VS-3C02EJ07-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, SIC, 650V, 2A, SINGLE
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 12.5pF @ 400V, 1MHz
Voltage - Peak Reverse (Max): 650V
Supplier Device Package: DO-221AC (SlimSMA)
Current - Max: 2 A
Power Dissipation (Max): 12.5 W
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3500+0.76 EUR
Mindestbestellmenge: 3500
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VS-3C02EJ07-M3/H doc?97287
VS-3C02EJ07-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, SIC, 650V, 2A, SINGLE
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Vr, F: 12.5pF @ 400V, 1MHz
Voltage - Peak Reverse (Max): 650V
Supplier Device Package: DO-221AC (SlimSMA)
Current - Max: 2 A
Power Dissipation (Max): 12.5 W
auf Bestellung 5569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
16+1.16 EUR
25+1.04 EUR
100+0.92 EUR
250+0.86 EUR
500+0.83 EUR
1000+0.8 EUR
Mindestbestellmenge: 11
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1.5KE180CAHE3_B/C 15ke.pdf
1.5KE180CAHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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4SMF15CA-M3/H doc?98831
4SMF15CA-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE, TVS, BI-DIR, 400W, 15V, 5
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Supplier Device Package: DO-219AB (SMF)
Produkt ist nicht verfügbar
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4SMF15CA-M3/H doc?98831
4SMF15CA-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE, TVS, BI-DIR, 400W, 15V, 5
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Supplier Device Package: DO-219AB (SMF)
Produkt ist nicht verfügbar
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4SMF15CAHM3/I doc?98831
4SMF15CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE, TVS, BI-DIR, 400W, 15V, 5
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Supplier Device Package: DO-219AB (SMF)
Produkt ist nicht verfügbar
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4SMF15CAHM3/I doc?98831
4SMF15CAHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE, TVS, BI-DIR, 400W, 15V, 5
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Supplier Device Package: DO-219AB (SMF)
Produkt ist nicht verfügbar
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