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ESH1DHE3_A/H ESH1DHE3_A/H Vishay General Semiconductor - Diodes Division esh1b.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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ESH1DHE3_A/H ESH1DHE3_A/H Vishay General Semiconductor - Diodes Division esh1b.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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ESH1DHE3_A/I ESH1DHE3_A/I Vishay General Semiconductor - Diodes Division esh1b.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESH1DHE3_A/I ESH1DHE3_A/I Vishay General Semiconductor - Diodes Division esh1b.pdf Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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V10P6HM3_A/I V10P6HM3_A/I Vishay General Semiconductor - Diodes Division v10p6.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 1.9 mA @ 60 V
Qualification: AEC-Q101
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AU1PDHM3/84A AU1PDHM3/84A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
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AU1PJHM3/84A AU1PJHM3/84A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 600V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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AU1PJHM3/84A AU1PJHM3/84A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 600V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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BZX84B36-E3-08 BZX84B36-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 36V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
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BZX84B36-E3-08 BZX84B36-E3-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 36V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
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BZX84B36-HE3_A-08 BZX84B36-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 36V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Qualification: AEC-Q101
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BZX84B36-HE3_A-18 BZX84B36-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 36V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5235C-E3-08 MMSZ5235C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
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MMSZ5235C-E3-08 MMSZ5235C-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
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MMSZ5235B-G3-08 MMSZ5235B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225-g_to_mmsz5267-g.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
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MMSZ5235B-G3-08 MMSZ5235B-G3-08 Vishay General Semiconductor - Diodes Division mmsz5225-g_to_mmsz5267-g.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
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MMSZ5235B-HE3_A-08 MMSZ5235B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5235B-HE3_A-18 MMSZ5235B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5235C-HE3_A-08 MMSZ5235C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5235C-HE3_A-18 MMSZ5235C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B6V8-G3-08 BZT52B6V8-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
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BZT52B6V8-G3-08 BZT52B6V8-G3-08 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
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BZT52B6V8-HE3_A-08 BZT52B6V8-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 6.8V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B6V8-HE3_A-18 BZT52B6V8-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 6.8V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ8.0AHE3_B/H SMBJ8.0AHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ8.0AHE3_B/I SMBJ8.0AHE3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ8.0AHM3_B/H SMBJ8.0AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ8.0AHM3_B/I SMBJ8.0AHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8VWM 13.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ58A-E3/5B SMBJ58A-E3/5B Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
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1N4745A-T Vishay General Semiconductor - Diodes Division ds18007.pdf Description: DIODE ZENER 16V 1.3W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
Qualification: AEC-Q101
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BYVB32-200-M3/I BYVB32-200-M3/I Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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BYVB32-200HM3/I BYVB32-200HM3/I Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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1N6301AHE3_B/C 1N6301AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 145VWM 234VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ22AHM3/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MMSZ5232B-HE3_A-08 MMSZ5232B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 5.6V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ530-M3/61 SMAJ530-M3/61 Vishay General Semiconductor - Diodes Division smaj530.pdf Description: TVS DIODE 188VWM 328VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 910mA
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMAJ530-M3/61 SMAJ530-M3/61 Vishay General Semiconductor - Diodes Division smaj530.pdf Description: TVS DIODE 188VWM 328VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 910mA
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 300W
Power Line Protection: No
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SMAJ530HM3_B/I SMAJ530HM3_B/I Vishay General Semiconductor - Diodes Division smaj530.pdf Description: TVS DIODE 477VWM 760VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 400mA
Voltage - Reverse Standoff (Typ): 477V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 530V
Voltage - Clamping (Max) @ Ipp: 760V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ530HM3_B/H SMAJ530HM3_B/H Vishay General Semiconductor - Diodes Division smaj530.pdf Description: TVS DIODE 477VWM 760VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 400mA
Voltage - Reverse Standoff (Typ): 477V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 530V
Voltage - Clamping (Max) @ Ipp: 760V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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LL4148-13 Vishay General Semiconductor - Diodes Division LL4148%2CLL4448.pdf Description: DIODE STANDARD 75V 150MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG03C150-HM3_A-08 BZG03C150-HM3_A-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Qualification: AEC-Q101
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BZG03C150-M3_A-08 BZG03C150-M3_A-08 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Produkt ist nicht verfügbar
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BZG03C150-M3_A-18 BZG03C150-M3_A-18 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Produkt ist nicht verfügbar
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BZG03C150-HM3_A-18 BZG03C150-HM3_A-18 Vishay General Semiconductor - Diodes Division bzg03c-m-series.pdf Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR3035PT-M3/P MBR3035PT-M3/P Vishay General Semiconductor - Diodes Division fep30xp.pdf Description: DIODE ARR SCHOTT 35V 30A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Produkt ist nicht verfügbar
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MBR4045CT MBR4045CT Vishay General Semiconductor - Diodes Division MBR4035PT-4060PT.pdf Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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V5NM153-M3/I V5NM153-M3/I Vishay General Semiconductor - Diodes Division v5nm153.pdf Description: DIODE SCHOTTK 150V 1.9A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V5NM153-M3/I V5NM153-M3/I Vishay General Semiconductor - Diodes Division v5nm153.pdf Description: DIODE SCHOTTK 150V 1.9A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
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V2NL63HM3/I V2NL63HM3/I Vishay General Semiconductor - Diodes Division v2nl63.pdf Description: DIODE SCHOTTKY 60V 1.8A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V2NL63HM3/I V2NL63HM3/I Vishay General Semiconductor - Diodes Division v2nl63.pdf Description: DIODE SCHOTTKY 60V 1.8A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
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V3NL63-M3/I V3NL63-M3/I Vishay General Semiconductor - Diodes Division v3nl63.pdf Description: DIODE SCHOTTKY 60V 2.1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Qualification: AEC-Q101
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V3NL63-M3/I V3NL63-M3/I Vishay General Semiconductor - Diodes Division v3nl63.pdf Description: DIODE SCHOTTKY 60V 2.1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Qualification: AEC-Q101
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V5N103-M3/I V5N103-M3/I Vishay General Semiconductor - Diodes Division v5n103.pdf Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 560pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 210 µA @ 100 V
Qualification: AEC-Q101
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V5N103-M3/I V5N103-M3/I Vishay General Semiconductor - Diodes Division v5n103.pdf Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 560pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 210 µA @ 100 V
Qualification: AEC-Q101
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V5NM153HM3/I V5NM153HM3/I Vishay General Semiconductor - Diodes Division v5nm153.pdf Description: DIODE SCHOTTK 150V 1.9A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V5NM153HM3/I V5NM153HM3/I Vishay General Semiconductor - Diodes Division v5nm153.pdf Description: DIODE SCHOTTK 150V 1.9A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 9897 Stücke:
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18+1.17 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.52 EUR
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V2NM153-M3/I V2NM153-M3/I Vishay General Semiconductor - Diodes Division v2nm153.pdf Description: DIODE SCHOTTK 150V 1.7A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V2NM153-M3/I V2NM153-M3/I Vishay General Semiconductor - Diodes Division v2nm153.pdf Description: DIODE SCHOTTK 150V 1.7A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 12828 Stücke:
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21+1.02 EUR
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500+0.39 EUR
1000+0.3 EUR
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V2N103-M3/I V2N103-M3/I Vishay General Semiconductor - Diodes Division v2n103.pdf Description: DIODE SCHOTTK 100V 1.6A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 260pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V2N103-M3/I V2N103-M3/I Vishay General Semiconductor - Diodes Division v2n103.pdf Description: DIODE SCHOTTK 100V 1.6A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 260pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 13920 Stücke:
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31+0.69 EUR
46+0.46 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.24 EUR
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ESH1DHE3_A/H esh1b.pdf
ESH1DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 5400 Stücke:
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1800+0.26 EUR
3600+0.25 EUR
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ESH1DHE3_A/H esh1b.pdf
ESH1DHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 7153 Stücke:
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ESH1DHE3_A/I esh1b.pdf
ESH1DHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ESH1DHE3_A/I esh1b.pdf
ESH1DHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6610 Stücke:
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20+1.09 EUR
30+0.71 EUR
100+0.52 EUR
500+0.4 EUR
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V10P6HM3_A/I v10p6.pdf
V10P6HM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 10 A
Current - Reverse Leakage @ Vr: 1.9 mA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AU1PDHM3/84A au1pm.pdf
AU1PDHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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3000+0.44 EUR
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AU1PJHM3/84A au1pm.pdf
AU1PJHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
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AU1PJHM3/84A au1pm.pdf
AU1PJHM3/84A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 8450 Stücke:
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AnzahlPrivatkunde
19+1.13 EUR
30+0.71 EUR
100+0.63 EUR
500+0.46 EUR
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BZX84B36-E3-08 bzx84_series.pdf
BZX84B36-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
auf Bestellung 27000 Stücke:
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AnzahlPrivatkunde
3000+0.17 EUR
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9000+0.14 EUR
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BZX84B36-E3-08 bzx84_series.pdf
BZX84B36-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 300MW SOT23-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
auf Bestellung 27011 Stücke:
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AnzahlPrivatkunde
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BZX84B36-HE3_A-08 bzx84_series.pdf
BZX84B36-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZX84B36-HE3_A-18 bzx84_series.pdf
BZX84B36-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 25.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5235C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5235C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
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9000+0.14 EUR
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MMSZ5235C-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5235C-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 17961 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
97+0.21 EUR
158+0.13 EUR
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MMSZ5235B-G3-08 mmsz5225-g_to_mmsz5267-g.pdf
MMSZ5235B-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 12000 Stücke:
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AnzahlPrivatkunde
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
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MMSZ5235B-G3-08 mmsz5225-g_to_mmsz5267-g.pdf
MMSZ5235B-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
auf Bestellung 14255 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
103+0.2 EUR
221+0.095 EUR
500+0.094 EUR
1000+0.093 EUR
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MMSZ5235B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5235B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5235B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5235B-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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MMSZ5235C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5235C-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5235C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5235C-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BZT52B6V8-G3-08 bzt52-g.pdf
BZT52B6V8-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.13 EUR
6000+0.12 EUR
9000+0.12 EUR
15000+0.084 EUR
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BZT52B6V8-G3-08 bzt52-g.pdf
BZT52B6V8-G3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 410MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
50+0.42 EUR
100+0.27 EUR
500+0.17 EUR
1000+0.13 EUR
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BZT52B6V8-HE3_A-08 bzt52.pdf
BZT52B6V8-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52B6V8-HE3_A-18 bzt52.pdf
BZT52B6V8-HE3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ8.0AHE3_B/H smbj.pdf
SMBJ8.0AHE3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 13.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ8.0AHE3_B/I smbj.pdf
SMBJ8.0AHE3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 13.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ8.0AHM3_B/H smbj.pdf
SMBJ8.0AHM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 13.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ8.0AHM3_B/I smbj.pdf
SMBJ8.0AHM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8VWM 13.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 44.1A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBJ58A-E3/5B smbj.pdf
SMBJ58A-E3/5B
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 58VWM 93.6VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3200+0.23 EUR
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1N4745A-T ds18007.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 1.3W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYVB32-200-M3/I byv32.pdf
BYVB32-200-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BYVB32-200HM3/I byv32.pdf
BYVB32-200HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1N6301AHE3_B/C 15ke.pdf
1N6301AHE3_B/C
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 145VWM 234VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ22AHM3/I smaj50a.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5232B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5232B-HE3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ530-M3/61 smaj530.pdf
SMAJ530-M3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 188VWM 328VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 910mA
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 3600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1800+0.4 EUR
3600+0.37 EUR
Mindestbestellmenge: 1800 Stücke
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SMAJ530-M3/61 smaj530.pdf
SMAJ530-M3/61
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 188VWM 328VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 910mA
Voltage - Reverse Standoff (Typ): 188V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 300W
Power Line Protection: No
auf Bestellung 5335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
23+0.92 EUR
100+0.64 EUR
500+0.49 EUR
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SMAJ530HM3_B/I smaj530.pdf
SMAJ530HM3_B/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 477VWM 760VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 400mA
Voltage - Reverse Standoff (Typ): 477V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 530V
Voltage - Clamping (Max) @ Ipp: 760V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMAJ530HM3_B/H smaj530.pdf
SMAJ530HM3_B/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 477VWM 760VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 400mA
Voltage - Reverse Standoff (Typ): 477V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 530V
Voltage - Clamping (Max) @ Ipp: 760V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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LL4148-13 LL4148%2CLL4448.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG03C150-HM3_A-08 bzg03c-m-series.pdf
BZG03C150-HM3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZG03C150-M3_A-08 bzg03c-m-series.pdf
BZG03C150-M3_A-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Produkt ist nicht verfügbar
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BZG03C150-M3_A-18 bzg03c-m-series.pdf
BZG03C150-M3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Produkt ist nicht verfügbar
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BZG03C150-HM3_A-18 bzg03c-m-series.pdf
BZG03C150-HM3_A-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 150V 1.25W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 300 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 110 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MBR3035PT-M3/P fep30xp.pdf
MBR3035PT-M3/P
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 30A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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MBR4045CT MBR4035PT-4060PT.pdf
MBR4045CT
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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V5NM153-M3/I v5nm153.pdf
V5NM153-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 150V 1.9A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V5NM153-M3/I v5nm153.pdf
V5NM153-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 150V 1.9A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 4252 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.62 EUR
21+1 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.44 EUR
2000+0.4 EUR
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V2NL63HM3/I v2nl63.pdf
V2NL63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1.8A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V2NL63HM3/I v2nl63.pdf
V2NL63HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1.8A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 360pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.8A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 12569 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
42+0.5 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.27 EUR
5000+0.26 EUR
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V3NL63-M3/I v3nl63.pdf
V3NL63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.1A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V3NL63-M3/I v3nl63.pdf
V3NL63-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.1A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 580pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.1A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A
Current - Reverse Leakage @ Vr: 60 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 12700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
26+0.82 EUR
39+0.54 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.29 EUR
2000+0.26 EUR
5000+0.25 EUR
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V5N103-M3/I v5n103.pdf
V5N103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 560pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 210 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V5N103-M3/I v5n103.pdf
V5N103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 2A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 560pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
Current - Reverse Leakage @ Vr: 210 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 12024 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
33+0.64 EUR
100+0.57 EUR
500+0.43 EUR
1000+0.35 EUR
2000+0.33 EUR
5000+0.32 EUR
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V5NM153HM3/I v5nm153.pdf
V5NM153HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 150V 1.9A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
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V5NM153HM3/I v5nm153.pdf
V5NM153HM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 150V 1.9A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 9897 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.52 EUR
2000+0.48 EUR
5000+0.43 EUR
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V2NM153-M3/I v2nm153.pdf
V2NM153-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 150V 1.7A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V2NM153-M3/I v2nm153.pdf
V2NM153-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 150V 1.7A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.7A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 12828 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.55 EUR
21+1.02 EUR
100+0.62 EUR
500+0.39 EUR
1000+0.3 EUR
2000+0.27 EUR
5000+0.23 EUR
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V2N103-M3/I v2n103.pdf
V2N103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 1.6A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 260pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
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V2N103-M3/I v2n103.pdf
V2N103-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 1.6A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 260pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 13920 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
46+0.46 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.24 EUR
2000+0.23 EUR
5000+0.2 EUR
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