Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4431CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.2A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.2A Pulsed drain current: -30A Power dissipation: 2.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2424 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4435DDY-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.5A Pulsed drain current: -50A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1132 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4435DDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.5A Pulsed drain current: -50A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2339 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4435FDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -12.6A Pulsed drain current: -32A Power dissipation: 4.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2420 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4447ADY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.2A Power dissipation: 4.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 62mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 664 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4459ADY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -23.5A; 5W; SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -23.5A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 61nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 78 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4463CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -18.6A Pulsed drain current: -60A Power dissipation: 5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 14mΩ Mounting: SMD Gate charge: 162nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1592 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4483ADY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -15.4A; 3.8W; SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -15.4A Power dissipation: 3.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 44.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1707 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4532CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4.9/-3.4A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.9/-3.4A Power dissipation: 1.78W Case: SO8 Gate-source voltage: ±20V On-state resistance: 47/89mΩ Mounting: SMD Gate charge: 9/12nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2320 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4559ADY-T1-GE3 | VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60/-60V; 4.3/-3.2A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 4.3/-3.2A Power dissipation: 3.4/3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 150/72mΩ Mounting: SMD Gate charge: 22/20nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1995 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4599DY-T1-GE3 | VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 40/-40V; 6.8/-5.8A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 6.8/-5.8A Power dissipation: 3.1/3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 62/42.5mΩ Mounting: SMD Gate charge: 38/20nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 632 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4686DY-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.5A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.5A Pulsed drain current: 50A Power dissipation: 5.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1224 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4800BDY-T1-E3 | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 40A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 735 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4835DDY-T1-E3 | VISHAY |
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auf Bestellung 2548 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4835DDY-T1-GE3 | VISHAY |
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auf Bestellung 584 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4840BDY-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 9.9A; Idm: 50A Kind of package: reel; tape Kind of channel: enhancement Case: SO8 Type of transistor: N-MOSFET Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 50nC On-state resistance: 12mΩ Power dissipation: 3.8W Drain current: 9.9A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 50A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1930 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4848DY-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SO8 Technology: TrenchFET® Gate charge: 21nC On-state resistance: 95mΩ Power dissipation: 3W Drain current: 3.7A Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 150V Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2044 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4850EY-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W Polarisation: unipolar Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Technology: TrenchFET® Gate charge: 27nC On-state resistance: 22mΩ Power dissipation: 1.2W Drain current: 6A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1134 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4925DDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.9A; 5W; SO8 Case: SO8 Technology: TrenchFET® Type of transistor: P-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.9A Gate charge: 50nC On-state resistance: 41mΩ Power dissipation: 5W Gate-source voltage: ±20V Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 295 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4936CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Pulsed drain current: 20A Drain current: 4.6A Gate charge: 9nC Type of transistor: N-MOSFET x2 On-state resistance: 50mΩ Power dissipation: 1.5W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2921 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4948BEY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Kind of package: reel; tape Pulsed drain current: -25A Drain current: -2.4A Gate charge: 22nC Type of transistor: P-MOSFET x2 On-state resistance: 0.15Ω Power dissipation: 0.95W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2241 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7113DN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -3.5A; Idm: -20A Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 33W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -100V Pulsed drain current: -20A Drain current: -3.5A Gate charge: 55nC On-state resistance: 0.134Ω Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2542 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7115DN-T1-GE3 | VISHAY |
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auf Bestellung 1843 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7121ADN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -50A Case: PowerPAK® 1212-8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -50A Drain-source voltage: -30V Drain current: -12A Gate charge: 50nC On-state resistance: 15mΩ Power dissipation: 17.8W Gate-source voltage: ±25V Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2564 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7149ADP-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W Technology: TrenchFET® Case: PowerPAK® SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain current: -50A Drain-source voltage: -30V Gate charge: 43.1nC On-state resistance: 9.5mΩ Gate-source voltage: ±25V Power dissipation: 31W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3571 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7153DN-T1-GE3 | VISHAY |
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auf Bestellung 2741 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7288DP-T1-GE3 | VISHAY |
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auf Bestellung 2349 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7461DP-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A Case: PowerPAK® SO8 Kind of channel: enhancement Technology: TrenchFET® Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -60A Drain-source voltage: -60V Drain current: -8.6A Gate charge: 0.19µC On-state resistance: 14.5mΩ Power dissipation: 1.2W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5291 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7465DP-T1-E3 | VISHAY |
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auf Bestellung 1783 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7615ADN-T1-GE3 | VISHAY |
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auf Bestellung 2984 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7617DN-T1-GE3 | VISHAY |
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auf Bestellung 2790 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7655ADN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -40A; Idm: -100A Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: PowerPAK® SO8 Technology: TrenchFET® Polarisation: unipolar Pulsed drain current: -100A Drain current: -40A Drain-source voltage: -20V Gate charge: 225nC On-state resistance: 3.6mΩ Gate-source voltage: ±12V Power dissipation: 36W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2750 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7850DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.2A Pulsed drain current: 40A Power dissipation: 0.9W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2967 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7938DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 60A; Idm: 80A Kind of channel: enhancement Type of transistor: N-MOSFET x2 Case: PowerPAK® SO8 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 65nC On-state resistance: 7mΩ Gate-source voltage: ±20V Drain current: 60A Drain-source voltage: 40V Power dissipation: 46W Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2814 Stücke: Lieferzeit 7-14 Tag (e) |
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SI8487DB-T1-E1 | VISHAY |
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auf Bestellung 883 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9407BDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3037 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9407BDY-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2187 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9407BDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3037 Stücke: Lieferzeit 7-14 Tag (e) |
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Si9433BDY-T1-E3 | VISHAY |
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auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9926CDY-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.7A; Idm: 30A Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel; tape On-state resistance: 22mΩ Drain current: 6.7A Pulsed drain current: 30A Gate charge: 33nC Gate-source voltage: ±12V Technology: TrenchFET® Drain-source voltage: 20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 739 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9933CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -20A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±12V On-state resistance: 94mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1514 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9945BDY-T1-GE3 | VISHAY |
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auf Bestellung 4935 Stücke: Lieferzeit 7-14 Tag (e) |
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SIA441DJ-T1-GE3 | VISHAY |
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auf Bestellung 2865 Stücke: Lieferzeit 7-14 Tag (e) |
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SiA469DJ-T1-GE3 | VISHAY |
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auf Bestellung 2682 Stücke: Lieferzeit 7-14 Tag (e) |
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SIA483DJ-T1-GE3 | VISHAY |
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auf Bestellung 2778 Stücke: Lieferzeit 7-14 Tag (e) |
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SIA517DJ-T1-GE3 | VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 12/-12V Drain current: 4.5/-4.5A Power dissipation: 6.5W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 170/65mΩ Mounting: SMD Gate charge: 20/15nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2719 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHA15N60E-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 477 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHD2N80AE-GE3 | VISHAY |
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auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHF22N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHF644S-GE3 | VISHAY | SIHF644S-GE3 SMD N channel transistors |
auf Bestellung 977 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHF9530S-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -48A Drain current: -8.2A Gate charge: 38nC On-state resistance: 0.3Ω Power dissipation: 88W Gate-source voltage: ±20V Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 938 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHFR1N60A-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Pulsed drain current: 5.6A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 79 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHFR220TRL-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3A Pulsed drain current: 19A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2925 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG15N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 157 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG47N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 357W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 64mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 234 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG73N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 46A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 46A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 362nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 381 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP065N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 25A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 469 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP100N60E-GE3 | VISHAY |
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auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP12N50E-GE3 | VISHAY |
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auf Bestellung 458 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP15N50E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.2A Pulsed drain current: 28A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4431CDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.2A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.2A
Pulsed drain current: -30A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.2A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.2A
Pulsed drain current: -30A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2424 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
84+ | 0.86 EUR |
91+ | 0.79 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
2500+ | 0.4 EUR |
SI4435DDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Pulsed drain current: -50A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Pulsed drain current: -50A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1132 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
168+ | 0.43 EUR |
184+ | 0.39 EUR |
SI4435DDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Pulsed drain current: -50A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Pulsed drain current: -50A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2339 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
90+ | 0.8 EUR |
211+ | 0.34 EUR |
224+ | 0.32 EUR |
5000+ | 0.31 EUR |
SI4435FDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Pulsed drain current: -32A
Power dissipation: 4.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Pulsed drain current: -32A
Power dissipation: 4.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2420 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
160+ | 0.45 EUR |
217+ | 0.33 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
500+ | 0.21 EUR |
SI4447ADY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.2A
Power dissipation: 4.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.2A
Power dissipation: 4.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 664 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
104+ | 0.69 EUR |
180+ | 0.4 EUR |
191+ | 0.38 EUR |
500+ | 0.36 EUR |
SI4459ADY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -23.5A; 5W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -23.5A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -23.5A; 5W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -23.5A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
35+ | 2.04 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
SI4463CDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18.6A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 162nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18.6A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 162nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1592 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.37 EUR |
79+ | 0.92 EUR |
109+ | 0.66 EUR |
116+ | 0.62 EUR |
250+ | 0.6 EUR |
SI4483ADY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -15.4A; 3.8W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.4A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -15.4A; 3.8W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.4A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1707 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.4 EUR |
57+ | 1.26 EUR |
62+ | 1.16 EUR |
65+ | 1.12 EUR |
66+ | 1.09 EUR |
100+ | 1.04 EUR |
SI4532CDY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4.9/-3.4A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.9/-3.4A
Power dissipation: 1.78W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 47/89mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4.9/-3.4A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.9/-3.4A
Power dissipation: 1.78W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 47/89mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2320 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
84+ | 0.85 EUR |
124+ | 0.58 EUR |
214+ | 0.33 EUR |
227+ | 0.32 EUR |
2500+ | 0.3 EUR |
SI4559ADY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60/-60V; 4.3/-3.2A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 4.3/-3.2A
Power dissipation: 3.4/3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 150/72mΩ
Mounting: SMD
Gate charge: 22/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60/-60V; 4.3/-3.2A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 4.3/-3.2A
Power dissipation: 3.4/3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 150/72mΩ
Mounting: SMD
Gate charge: 22/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1995 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
55+ | 1.3 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
SI4599DY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 40/-40V; 6.8/-5.8A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.8/-5.8A
Power dissipation: 3.1/3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62/42.5mΩ
Mounting: SMD
Gate charge: 38/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 40/-40V; 6.8/-5.8A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.8/-5.8A
Power dissipation: 3.1/3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62/42.5mΩ
Mounting: SMD
Gate charge: 38/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 632 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.26 EUR |
76+ | 0.94 EUR |
184+ | 0.39 EUR |
195+ | 0.37 EUR |
2500+ | 0.36 EUR |
SI4686DY-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 50A
Power dissipation: 5.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 50A
Power dissipation: 5.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1224 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
101+ | 0.71 EUR |
141+ | 0.51 EUR |
149+ | 0.48 EUR |
2500+ | 0.47 EUR |
5000+ | 0.46 EUR |
SI4800BDY-T1-E3 | ![]() |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 735 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
118+ | 0.61 EUR |
195+ | 0.37 EUR |
206+ | 0.35 EUR |
SI4835DDY-T1-E3 |
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Hersteller: VISHAY
SI4835DDY-T1-E3 SMD P channel transistors
SI4835DDY-T1-E3 SMD P channel transistors
auf Bestellung 2548 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.85 EUR |
108+ | 0.67 EUR |
114+ | 0.63 EUR |
SI4835DDY-T1-GE3 |
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Hersteller: VISHAY
SI4835DDY-T1-GE3 SMD P channel transistors
SI4835DDY-T1-GE3 SMD P channel transistors
auf Bestellung 584 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
124+ | 0.58 EUR |
132+ | 0.54 EUR |
2500+ | 0.52 EUR |
SI4840BDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 9.9A; Idm: 50A
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 12mΩ
Power dissipation: 3.8W
Drain current: 9.9A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 50A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 9.9A; Idm: 50A
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 12mΩ
Power dissipation: 3.8W
Drain current: 9.9A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 50A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1930 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.53 EUR |
53+ | 1.36 EUR |
57+ | 1.27 EUR |
97+ | 0.74 EUR |
102+ | 0.7 EUR |
2500+ | 0.69 EUR |
5000+ | 0.68 EUR |
SI4848DY-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
Technology: TrenchFET®
Gate charge: 21nC
On-state resistance: 95mΩ
Power dissipation: 3W
Drain current: 3.7A
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 150V
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
Technology: TrenchFET®
Gate charge: 21nC
On-state resistance: 95mΩ
Power dissipation: 3W
Drain current: 3.7A
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 150V
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2044 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
50+ | 1.44 EUR |
72+ | 1 EUR |
75+ | 0.96 EUR |
500+ | 0.92 EUR |
SI4850EY-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W
Polarisation: unipolar
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 1.2W
Drain current: 6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W
Polarisation: unipolar
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 1.2W
Drain current: 6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1134 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.46 EUR |
35+ | 2.09 EUR |
38+ | 1.89 EUR |
110+ | 0.65 EUR |
116+ | 0.62 EUR |
SI4925DDY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.9A; 5W; SO8
Case: SO8
Technology: TrenchFET®
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Gate charge: 50nC
On-state resistance: 41mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.9A; 5W; SO8
Case: SO8
Technology: TrenchFET®
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Gate charge: 50nC
On-state resistance: 41mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 295 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
60+ | 1.21 EUR |
66+ | 1.09 EUR |
135+ | 0.53 EUR |
143+ | 0.5 EUR |
1000+ | 0.48 EUR |
SI4936CDY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2921 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
94+ | 0.76 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
SI4948BEY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Kind of package: reel; tape
Pulsed drain current: -25A
Drain current: -2.4A
Gate charge: 22nC
Type of transistor: P-MOSFET x2
On-state resistance: 0.15Ω
Power dissipation: 0.95W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Kind of package: reel; tape
Pulsed drain current: -25A
Drain current: -2.4A
Gate charge: 22nC
Type of transistor: P-MOSFET x2
On-state resistance: 0.15Ω
Power dissipation: 0.95W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2241 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.06 EUR |
47+ | 1.53 EUR |
130+ | 0.55 EUR |
137+ | 0.52 EUR |
SI7113DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 33W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -100V
Pulsed drain current: -20A
Drain current: -3.5A
Gate charge: 55nC
On-state resistance: 0.134Ω
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 33W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -100V
Pulsed drain current: -20A
Drain current: -3.5A
Gate charge: 55nC
On-state resistance: 0.134Ω
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2542 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.9 EUR |
46+ | 1.57 EUR |
65+ | 1.1 EUR |
69+ | 1.04 EUR |
1000+ | 1 EUR |
SI7115DN-T1-GE3 |
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Hersteller: VISHAY
SI7115DN-T1-GE3 SMD P channel transistors
SI7115DN-T1-GE3 SMD P channel transistors
auf Bestellung 1843 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.19 EUR |
59+ | 1.23 EUR |
62+ | 1.16 EUR |
3000+ | 1.12 EUR |
SI7121ADN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -50A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -30V
Drain current: -12A
Gate charge: 50nC
On-state resistance: 15mΩ
Power dissipation: 17.8W
Gate-source voltage: ±25V
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -50A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -30V
Drain current: -12A
Gate charge: 50nC
On-state resistance: 15mΩ
Power dissipation: 17.8W
Gate-source voltage: ±25V
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2564 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
105+ | 0.68 EUR |
116+ | 0.62 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
1000+ | 0.36 EUR |
SI7149ADP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W
Technology: TrenchFET®
Case: PowerPAK® SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
Gate charge: 43.1nC
On-state resistance: 9.5mΩ
Gate-source voltage: ±25V
Power dissipation: 31W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W
Technology: TrenchFET®
Case: PowerPAK® SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
Gate charge: 43.1nC
On-state resistance: 9.5mΩ
Gate-source voltage: ±25V
Power dissipation: 31W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3571 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
79+ | 0.91 EUR |
138+ | 0.52 EUR |
146+ | 0.49 EUR |
1000+ | 0.47 EUR |
SI7153DN-T1-GE3 |
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Hersteller: VISHAY
SI7153DN-T1-GE3 SMD P channel transistors
SI7153DN-T1-GE3 SMD P channel transistors
auf Bestellung 2741 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.15 EUR |
197+ | 0.36 EUR |
208+ | 0.34 EUR |
SI7288DP-T1-GE3 |
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Hersteller: VISHAY
SI7288DP-T1-GE3 Multi channel transistors
SI7288DP-T1-GE3 Multi channel transistors
auf Bestellung 2349 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.92 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
SI7461DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A
Case: PowerPAK® SO8
Kind of channel: enhancement
Technology: TrenchFET®
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -60A
Drain-source voltage: -60V
Drain current: -8.6A
Gate charge: 0.19µC
On-state resistance: 14.5mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A
Case: PowerPAK® SO8
Kind of channel: enhancement
Technology: TrenchFET®
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -60A
Drain-source voltage: -60V
Drain current: -8.6A
Gate charge: 0.19µC
On-state resistance: 14.5mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5291 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.27 EUR |
30+ | 2.4 EUR |
45+ | 1.6 EUR |
48+ | 1.52 EUR |
500+ | 1.46 EUR |
SI7465DP-T1-E3 |
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Hersteller: VISHAY
SI7465DP-T1-E3 SMD P channel transistors
SI7465DP-T1-E3 SMD P channel transistors
auf Bestellung 1783 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
3000+ | 0.9 EUR |
SI7615ADN-T1-GE3 |
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Hersteller: VISHAY
SI7615ADN-T1-GE3 SMD P channel transistors
SI7615ADN-T1-GE3 SMD P channel transistors
auf Bestellung 2984 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
SI7617DN-T1-GE3 |
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Hersteller: VISHAY
SI7617DN-T1-GE3 SMD P channel transistors
SI7617DN-T1-GE3 SMD P channel transistors
auf Bestellung 2790 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
103+ | 0.7 EUR |
109+ | 0.66 EUR |
SI7655ADN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -40A; Idm: -100A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: PowerPAK® SO8
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -40A
Drain-source voltage: -20V
Gate charge: 225nC
On-state resistance: 3.6mΩ
Gate-source voltage: ±12V
Power dissipation: 36W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -40A; Idm: -100A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: PowerPAK® SO8
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -40A
Drain-source voltage: -20V
Gate charge: 225nC
On-state resistance: 3.6mΩ
Gate-source voltage: ±12V
Power dissipation: 36W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
75+ | 0.96 EUR |
124+ | 0.58 EUR |
131+ | 0.55 EUR |
500+ | 0.53 EUR |
SI7850DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 0.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 0.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2967 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.95 EUR |
30+ | 2.39 EUR |
34+ | 2.16 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
1500+ | 0.92 EUR |
SI7938DP-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 60A; Idm: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 40V
Power dissipation: 46W
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 60A; Idm: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 40V
Power dissipation: 46W
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2814 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.96 EUR |
51+ | 1.42 EUR |
59+ | 1.22 EUR |
62+ | 1.16 EUR |
100+ | 1.12 EUR |
SI8487DB-T1-E1 |
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Hersteller: VISHAY
SI8487DB-T1-E1 SMD P channel transistors
SI8487DB-T1-E1 SMD P channel transistors
auf Bestellung 883 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.16 EUR |
229+ | 0.31 EUR |
242+ | 0.3 EUR |
SI9407BDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3037 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.73 EUR |
64+ | 1.12 EUR |
143+ | 0.5 EUR |
151+ | 0.47 EUR |
7500+ | 0.46 EUR |
SI9407BDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2187 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
83+ | 0.87 EUR |
91+ | 0.79 EUR |
173+ | 0.41 EUR |
184+ | 0.39 EUR |
SI9407BDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3037 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.73 EUR |
64+ | 1.12 EUR |
143+ | 0.5 EUR |
151+ | 0.47 EUR |
7500+ | 0.46 EUR |
Si9433BDY-T1-E3 |
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Hersteller: VISHAY
SI9433BDY-E3 SMD P channel transistors
SI9433BDY-E3 SMD P channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
21+ | 3.4 EUR |
56+ | 1.27 EUR |
500+ | 0.76 EUR |
SI9926CDY-T1-E3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.7A; Idm: 30A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 22mΩ
Drain current: 6.7A
Pulsed drain current: 30A
Gate charge: 33nC
Gate-source voltage: ±12V
Technology: TrenchFET®
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.7A; Idm: 30A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 22mΩ
Drain current: 6.7A
Pulsed drain current: 30A
Gate charge: 33nC
Gate-source voltage: ±12V
Technology: TrenchFET®
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 739 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.46 EUR |
63+ | 1.15 EUR |
70+ | 1.03 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
SI9933CDY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1514 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
85+ | 0.85 EUR |
97+ | 0.74 EUR |
187+ | 0.38 EUR |
197+ | 0.36 EUR |
1000+ | 0.35 EUR |
SI9945BDY-T1-GE3 |
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Hersteller: VISHAY
SI9945BDY-T1-GE3 SMD N channel transistors
SI9945BDY-T1-GE3 SMD N channel transistors
auf Bestellung 4935 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
102+ | 0.71 EUR |
107+ | 0.67 EUR |
SIA441DJ-T1-GE3 |
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Hersteller: VISHAY
SIA441DJ-T1-GE3 SMD P channel transistors
SIA441DJ-T1-GE3 SMD P channel transistors
auf Bestellung 2865 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
208+ | 0.34 EUR |
220+ | 0.33 EUR |
3000+ | 0.31 EUR |
SiA469DJ-T1-GE3 |
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Hersteller: VISHAY
SIA469DJ-T1-GE3 SMD P channel transistors
SIA469DJ-T1-GE3 SMD P channel transistors
auf Bestellung 2682 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
SIA483DJ-T1-GE3 |
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Hersteller: VISHAY
SIA483DJ-T1-GE3 SMD P channel transistors
SIA483DJ-T1-GE3 SMD P channel transistors
auf Bestellung 2778 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
83+ | 0.87 EUR |
268+ | 0.27 EUR |
283+ | 0.25 EUR |
SIA517DJ-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2719 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
97+ | 0.74 EUR |
113+ | 0.63 EUR |
205+ | 0.35 EUR |
217+ | 0.33 EUR |
500+ | 0.32 EUR |
SIHA15N60E-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 477 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.16 EUR |
22+ | 3.36 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
50+ | 2.17 EUR |
100+ | 2.14 EUR |
SIHD2N80AE-GE3 |
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Hersteller: VISHAY
SIHD2N80AE-GE3 SMD N channel transistors
SIHD2N80AE-GE3 SMD N channel transistors
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
13+ | 5.51 EUR |
34+ | 2.1 EUR |
300+ | 1.27 EUR |
SIHF22N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.81 EUR |
21+ | 3.42 EUR |
23+ | 3.23 EUR |
50+ | 3.17 EUR |
100+ | 3.12 EUR |
SIHF644S-GE3 |
Hersteller: VISHAY
SIHF644S-GE3 SMD N channel transistors
SIHF644S-GE3 SMD N channel transistors
auf Bestellung 977 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
SIHF9530S-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -48A
Drain current: -8.2A
Gate charge: 38nC
On-state resistance: 0.3Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -48A
Drain current: -8.2A
Gate charge: 38nC
On-state resistance: 0.3Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 938 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
72+ | 1 EUR |
86+ | 0.84 EUR |
97+ | 0.74 EUR |
112+ | 0.64 EUR |
117+ | 0.61 EUR |
SIHFR1N60A-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.9 EUR |
93+ | 0.77 EUR |
SIHFR220TRL-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
106+ | 0.68 EUR |
117+ | 0.61 EUR |
152+ | 0.47 EUR |
162+ | 0.44 EUR |
SIHG15N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.8 EUR |
18+ | 4.06 EUR |
23+ | 3.25 EUR |
24+ | 3.07 EUR |
100+ | 2.95 EUR |
SIHG47N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.45 EUR |
8+ | 9.57 EUR |
SIHG73N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 46A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 46A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 362nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 46A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 46A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 362nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 381 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.74 EUR |
7+ | 10.97 EUR |
10+ | 10.55 EUR |
SIHP065N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 469 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.94 EUR |
SIHP100N60E-GE3 |
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Hersteller: VISHAY
SIHP100N60E-GE3 THT N channel transistors
SIHP100N60E-GE3 THT N channel transistors
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.06 EUR |
17+ | 4.38 EUR |
18+ | 4.15 EUR |
SIHP12N50E-GE3 |
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Hersteller: VISHAY
SIHP12N50E-GE3 THT N channel transistors
SIHP12N50E-GE3 THT N channel transistors
auf Bestellung 458 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.06 EUR |
48+ | 1.5 EUR |
50+ | 1.43 EUR |
51+ | 1.42 EUR |
SIHP15N50E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.76 EUR |
35+ | 2.1 EUR |
41+ | 1.77 EUR |
50+ | 1.44 EUR |
53+ | 1.36 EUR |
55+ | 1.3 EUR |