Foto | Bezeichnung | Hersteller | Beschreibung |
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SI7461DP-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A Case: PowerPAK® SO8 Kind of channel: enhancement Technology: TrenchFET® Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -60A Drain-source voltage: -60V Drain current: -8.6A Gate charge: 0.19µC On-state resistance: 14.5mΩ Power dissipation: 1.2W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5291 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7465DP-T1-E3 | VISHAY |
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auf Bestellung 1783 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7615ADN-T1-GE3 | VISHAY |
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auf Bestellung 2984 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7617DN-T1-GE3 | VISHAY |
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auf Bestellung 2790 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7655ADN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -40A; Idm: -100A Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: PowerPAK® SO8 Technology: TrenchFET® Polarisation: unipolar Pulsed drain current: -100A Drain current: -40A Drain-source voltage: -20V Gate charge: 225nC On-state resistance: 3.6mΩ Gate-source voltage: ±12V Power dissipation: 36W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2750 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7850DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.2A Pulsed drain current: 40A Power dissipation: 0.9W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2967 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7938DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 60A; Idm: 80A Kind of channel: enhancement Type of transistor: N-MOSFET x2 Case: PowerPAK® SO8 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 65nC On-state resistance: 7mΩ Gate-source voltage: ±20V Drain current: 60A Drain-source voltage: 40V Power dissipation: 46W Pulsed drain current: 80A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2814 Stücke: Lieferzeit 7-14 Tag (e) |
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SI8487DB-T1-E1 | VISHAY |
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auf Bestellung 883 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9407BDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3037 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9407BDY-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2187 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9407BDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3037 Stücke: Lieferzeit 7-14 Tag (e) |
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Si9433BDY-T1-E3 | VISHAY |
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auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9926CDY-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.7A; Idm: 30A Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel; tape On-state resistance: 22mΩ Drain current: 6.7A Pulsed drain current: 30A Gate charge: 33nC Gate-source voltage: ±12V Technology: TrenchFET® Drain-source voltage: 20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 739 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9933CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -20A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±12V On-state resistance: 94mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1514 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9945BDY-T1-GE3 | VISHAY |
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auf Bestellung 4935 Stücke: Lieferzeit 7-14 Tag (e) |
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SIA441DJ-T1-GE3 | VISHAY |
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auf Bestellung 2865 Stücke: Lieferzeit 7-14 Tag (e) |
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SiA469DJ-T1-GE3 | VISHAY |
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auf Bestellung 2682 Stücke: Lieferzeit 7-14 Tag (e) |
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SIA483DJ-T1-GE3 | VISHAY |
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auf Bestellung 2778 Stücke: Lieferzeit 7-14 Tag (e) |
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SIA517DJ-T1-GE3 | VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 12/-12V Drain current: 4.5/-4.5A Power dissipation: 6.5W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 170/65mΩ Mounting: SMD Gate charge: 20/15nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2719 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHA15N60E-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 477 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHD2N80AE-GE3 | VISHAY |
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auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHF22N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHF644S-GE3 | VISHAY | SIHF644S-GE3 SMD N channel transistors |
auf Bestellung 977 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHF9530S-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -48A Drain current: -8.2A Gate charge: 38nC On-state resistance: 0.3Ω Power dissipation: 88W Gate-source voltage: ±20V Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 938 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHFR1N60A-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.89A Pulsed drain current: 5.6A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 7Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 79 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHFR220TRL-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3A Pulsed drain current: 19A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 14nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2925 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG15N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 157 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG47N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 357W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 64mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 234 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG73N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 46A; 520W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 46A Power dissipation: 520W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 362nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 381 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP065N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 25A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 469 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP100N60E-GE3 | VISHAY |
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auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP12N50E-GE3 | VISHAY |
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auf Bestellung 458 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP15N50E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.2A Pulsed drain current: 28A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP22N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 199 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP24N80AE-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 51A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 899 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHP24N80AEF-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 20A Pulsed drain current: 46A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 409 Stücke: Lieferzeit 7-14 Tag (e) |
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SIP32431DNP3-T1GE4 | VISHAY |
![]() Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4 Supply voltage: 1.5...5.5V DC Kind of package: reel; tape Type of integrated circuit: power switch Kind of output: P-Channel Case: TDFN4 Mounting: SMD On-state resistance: 0.105Ω Number of channels: 1 Output current: 1.4A Kind of integrated circuit: high-side Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1262 Stücke: Lieferzeit 7-14 Tag (e) |
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SIP32431DR3-T1GE3 | VISHAY |
![]() Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70 Supply voltage: 1.5...5.5V DC Kind of package: reel; tape Type of integrated circuit: power switch Kind of output: P-Channel Case: SC70 Mounting: SMD On-state resistance: 147mΩ Number of channels: 1 Output current: 1.4A Kind of integrated circuit: high-side Anzahl je Verpackung: 1 Stücke |
auf Bestellung 269 Stücke: Lieferzeit 7-14 Tag (e) |
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SIP32509DT-T1-GE3 | VISHAY |
![]() Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TSOT23 On-state resistance: 46mΩ Kind of package: reel; tape Supply voltage: 1.1...5.5V DC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 304 Stücke: Lieferzeit 7-14 Tag (e) |
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SIP32510DT-T1-GE3 | VISHAY |
![]() Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TSOT23 On-state resistance: 46mΩ Kind of package: reel; tape Supply voltage: 1.2...5.5V DC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1483 Stücke: Lieferzeit 7-14 Tag (e) |
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SIR186LDP-T1-RE3 | VISHAY |
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auf Bestellung 1295 Stücke: Lieferzeit 7-14 Tag (e) |
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SIR422DP-T1-GE3 | VISHAY |
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auf Bestellung 2548 Stücke: Lieferzeit 7-14 Tag (e) |
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SIR622DP-T1-RE3 | VISHAY |
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auf Bestellung 5662 Stücke: Lieferzeit 7-14 Tag (e) |
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SIR626LDP-T1-RE3 | VISHAY |
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auf Bestellung 2209 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA06DP-T1-GE3 | VISHAY |
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auf Bestellung 1975 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA10DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 140A; 26W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Pulsed drain current: 140A Power dissipation: 26W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2960 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA14DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 130A Power dissipation: 20W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1906 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA18ADP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24.5A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 24.5A Pulsed drain current: 70A Power dissipation: 9.4W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2777 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA28BDP-T1-GE3 | VISHAY |
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auf Bestellung 2992 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA52ADP-T1-RE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 105A Pulsed drain current: 200A Power dissipation: 30.7W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2985 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA90DP-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 153nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2433 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA99DP-T1-GE3 | VISHAY |
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auf Bestellung 2438 Stücke: Lieferzeit 7-14 Tag (e) |
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SiRC16DP-T1-GE3 | VISHAY |
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auf Bestellung 2943 Stücke: Lieferzeit 7-14 Tag (e) |
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SiS406DN-T1-GE3 | VISHAY |
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auf Bestellung 2982 Stücke: Lieferzeit 7-14 Tag (e) |
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SIS412DN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A; 10W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 30A Power dissipation: 10W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2916 Stücke: Lieferzeit 7-14 Tag (e) |
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SIS413DN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A Kind of channel: enhancement Case: PowerPAK® 1212-8 Technology: TrenchFET® Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -70A Drain-source voltage: -30V Drain current: -18A Gate charge: 110nC On-state resistance: 13.2mΩ Power dissipation: 33W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3167 Stücke: Lieferzeit 7-14 Tag (e) |
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SIS443DN-T1-GE3 | VISHAY |
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auf Bestellung 1779 Stücke: Lieferzeit 7-14 Tag (e) |
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SIS892ADN-T1-GE3 | VISHAY |
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auf Bestellung 2842 Stücke: Lieferzeit 7-14 Tag (e) |
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SISH625DN-T1-GE3 | VISHAY |
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auf Bestellung 5173 Stücke: Lieferzeit 7-14 Tag (e) |
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SISS05DN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -86.6A; 42W Mounting: SMD Technology: TrenchFET® Pulsed drain current: -300A Drain current: -86.6A Drain-source voltage: -30V Gate-source voltage: -20...16V Gate charge: 115nC On-state resistance: 5.8mΩ Power dissipation: 42W Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerPAK® 1212-8 Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2577 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7461DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A
Case: PowerPAK® SO8
Kind of channel: enhancement
Technology: TrenchFET®
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -60A
Drain-source voltage: -60V
Drain current: -8.6A
Gate charge: 0.19µC
On-state resistance: 14.5mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A
Case: PowerPAK® SO8
Kind of channel: enhancement
Technology: TrenchFET®
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -60A
Drain-source voltage: -60V
Drain current: -8.6A
Gate charge: 0.19µC
On-state resistance: 14.5mΩ
Power dissipation: 1.2W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5291 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.27 EUR |
30+ | 2.4 EUR |
45+ | 1.6 EUR |
48+ | 1.52 EUR |
500+ | 1.46 EUR |
SI7465DP-T1-E3 |
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Hersteller: VISHAY
SI7465DP-T1-E3 SMD P channel transistors
SI7465DP-T1-E3 SMD P channel transistors
auf Bestellung 1783 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
3000+ | 0.9 EUR |
SI7615ADN-T1-GE3 |
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Hersteller: VISHAY
SI7615ADN-T1-GE3 SMD P channel transistors
SI7615ADN-T1-GE3 SMD P channel transistors
auf Bestellung 2984 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
SI7617DN-T1-GE3 |
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Hersteller: VISHAY
SI7617DN-T1-GE3 SMD P channel transistors
SI7617DN-T1-GE3 SMD P channel transistors
auf Bestellung 2790 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
103+ | 0.7 EUR |
109+ | 0.66 EUR |
SI7655ADN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -40A; Idm: -100A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: PowerPAK® SO8
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -40A
Drain-source voltage: -20V
Gate charge: 225nC
On-state resistance: 3.6mΩ
Gate-source voltage: ±12V
Power dissipation: 36W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -40A; Idm: -100A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: PowerPAK® SO8
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -100A
Drain current: -40A
Drain-source voltage: -20V
Gate charge: 225nC
On-state resistance: 3.6mΩ
Gate-source voltage: ±12V
Power dissipation: 36W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2750 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
75+ | 0.96 EUR |
124+ | 0.58 EUR |
131+ | 0.55 EUR |
500+ | 0.53 EUR |
SI7850DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 0.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6.2A; Idm: 40A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.2A
Pulsed drain current: 40A
Power dissipation: 0.9W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2967 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.95 EUR |
30+ | 2.39 EUR |
34+ | 2.16 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
1500+ | 0.92 EUR |
SI7938DP-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 60A; Idm: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 40V
Power dissipation: 46W
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 60A; Idm: 80A
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: PowerPAK® SO8
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 65nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Drain current: 60A
Drain-source voltage: 40V
Power dissipation: 46W
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2814 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.96 EUR |
51+ | 1.42 EUR |
59+ | 1.22 EUR |
62+ | 1.16 EUR |
100+ | 1.12 EUR |
SI8487DB-T1-E1 |
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Hersteller: VISHAY
SI8487DB-T1-E1 SMD P channel transistors
SI8487DB-T1-E1 SMD P channel transistors
auf Bestellung 883 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.16 EUR |
229+ | 0.31 EUR |
242+ | 0.3 EUR |
SI9407BDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3037 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.73 EUR |
64+ | 1.12 EUR |
143+ | 0.5 EUR |
151+ | 0.47 EUR |
7500+ | 0.46 EUR |
SI9407BDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2187 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
83+ | 0.87 EUR |
91+ | 0.79 EUR |
173+ | 0.41 EUR |
184+ | 0.39 EUR |
SI9407BDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -2.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3037 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.73 EUR |
64+ | 1.12 EUR |
143+ | 0.5 EUR |
151+ | 0.47 EUR |
7500+ | 0.46 EUR |
Si9433BDY-T1-E3 |
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Hersteller: VISHAY
SI9433BDY-E3 SMD P channel transistors
SI9433BDY-E3 SMD P channel transistors
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
21+ | 3.4 EUR |
56+ | 1.27 EUR |
500+ | 0.76 EUR |
SI9926CDY-T1-E3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.7A; Idm: 30A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 22mΩ
Drain current: 6.7A
Pulsed drain current: 30A
Gate charge: 33nC
Gate-source voltage: ±12V
Technology: TrenchFET®
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.7A; Idm: 30A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 22mΩ
Drain current: 6.7A
Pulsed drain current: 30A
Gate charge: 33nC
Gate-source voltage: ±12V
Technology: TrenchFET®
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 739 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.46 EUR |
63+ | 1.15 EUR |
70+ | 1.03 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
SI9933CDY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1514 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
85+ | 0.85 EUR |
97+ | 0.74 EUR |
187+ | 0.38 EUR |
197+ | 0.36 EUR |
1000+ | 0.35 EUR |
SI9945BDY-T1-GE3 |
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Hersteller: VISHAY
SI9945BDY-T1-GE3 SMD N channel transistors
SI9945BDY-T1-GE3 SMD N channel transistors
auf Bestellung 4935 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
102+ | 0.71 EUR |
107+ | 0.67 EUR |
SIA441DJ-T1-GE3 |
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Hersteller: VISHAY
SIA441DJ-T1-GE3 SMD P channel transistors
SIA441DJ-T1-GE3 SMD P channel transistors
auf Bestellung 2865 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
208+ | 0.34 EUR |
220+ | 0.33 EUR |
3000+ | 0.31 EUR |
SiA469DJ-T1-GE3 |
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Hersteller: VISHAY
SIA469DJ-T1-GE3 SMD P channel transistors
SIA469DJ-T1-GE3 SMD P channel transistors
auf Bestellung 2682 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
SIA483DJ-T1-GE3 |
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Hersteller: VISHAY
SIA483DJ-T1-GE3 SMD P channel transistors
SIA483DJ-T1-GE3 SMD P channel transistors
auf Bestellung 2778 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
83+ | 0.87 EUR |
268+ | 0.27 EUR |
283+ | 0.25 EUR |
SIA517DJ-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12/-12V
Drain current: 4.5/-4.5A
Power dissipation: 6.5W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 170/65mΩ
Mounting: SMD
Gate charge: 20/15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2719 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
97+ | 0.74 EUR |
113+ | 0.63 EUR |
205+ | 0.35 EUR |
217+ | 0.33 EUR |
500+ | 0.32 EUR |
SIHA15N60E-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 477 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.16 EUR |
22+ | 3.36 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
50+ | 2.17 EUR |
100+ | 2.14 EUR |
SIHD2N80AE-GE3 |
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Hersteller: VISHAY
SIHD2N80AE-GE3 SMD N channel transistors
SIHD2N80AE-GE3 SMD N channel transistors
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 11.91 EUR |
13+ | 5.51 EUR |
34+ | 2.1 EUR |
300+ | 1.27 EUR |
SIHF22N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.81 EUR |
21+ | 3.42 EUR |
23+ | 3.23 EUR |
50+ | 3.17 EUR |
100+ | 3.12 EUR |
SIHF644S-GE3 |
Hersteller: VISHAY
SIHF644S-GE3 SMD N channel transistors
SIHF644S-GE3 SMD N channel transistors
auf Bestellung 977 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
SIHF9530S-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -48A
Drain current: -8.2A
Gate charge: 38nC
On-state resistance: 0.3Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -48A
Drain current: -8.2A
Gate charge: 38nC
On-state resistance: 0.3Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Case: D2PAK; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 938 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
72+ | 1 EUR |
86+ | 0.84 EUR |
97+ | 0.74 EUR |
112+ | 0.64 EUR |
117+ | 0.61 EUR |
SIHFR1N60A-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.89A; Idm: 5.6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.89A
Pulsed drain current: 5.6A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.9 EUR |
93+ | 0.77 EUR |
SIHFR220TRL-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; Idm: 19A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Pulsed drain current: 19A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2925 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
106+ | 0.68 EUR |
117+ | 0.61 EUR |
152+ | 0.47 EUR |
162+ | 0.44 EUR |
SIHG15N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.8 EUR |
18+ | 4.06 EUR |
23+ | 3.25 EUR |
24+ | 3.07 EUR |
100+ | 2.95 EUR |
SIHG47N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.45 EUR |
8+ | 9.57 EUR |
SIHG73N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 46A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 46A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 362nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 46A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 46A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 362nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 381 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 14.74 EUR |
7+ | 10.97 EUR |
10+ | 10.55 EUR |
SIHP065N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 469 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.94 EUR |
SIHP100N60E-GE3 |
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Hersteller: VISHAY
SIHP100N60E-GE3 THT N channel transistors
SIHP100N60E-GE3 THT N channel transistors
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.06 EUR |
17+ | 4.38 EUR |
18+ | 4.15 EUR |
SIHP12N50E-GE3 |
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Hersteller: VISHAY
SIHP12N50E-GE3 THT N channel transistors
SIHP12N50E-GE3 THT N channel transistors
auf Bestellung 458 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.06 EUR |
48+ | 1.5 EUR |
50+ | 1.43 EUR |
51+ | 1.42 EUR |
SIHP15N50E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.76 EUR |
35+ | 2.1 EUR |
41+ | 1.77 EUR |
50+ | 1.44 EUR |
53+ | 1.36 EUR |
55+ | 1.3 EUR |
SIHP22N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 199 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.82 EUR |
18+ | 4.02 EUR |
19+ | 3.79 EUR |
SIHP24N80AE-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 51A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 899 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.26 EUR |
20+ | 3.68 EUR |
23+ | 3.19 EUR |
24+ | 3.02 EUR |
25+ | 2.9 EUR |
SIHP24N80AEF-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; Idm: 46A; 208W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Pulsed drain current: 46A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 409 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.15 EUR |
19+ | 3.8 EUR |
24+ | 3.07 EUR |
25+ | 2.9 EUR |
26+ | 2.79 EUR |
SIP32431DNP3-T1GE4 |
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Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4
Supply voltage: 1.5...5.5V DC
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: P-Channel
Case: TDFN4
Mounting: SMD
On-state resistance: 0.105Ω
Number of channels: 1
Output current: 1.4A
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; TDFN4
Supply voltage: 1.5...5.5V DC
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: P-Channel
Case: TDFN4
Mounting: SMD
On-state resistance: 0.105Ω
Number of channels: 1
Output current: 1.4A
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1262 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
175+ | 0.41 EUR |
194+ | 0.37 EUR |
202+ | 0.35 EUR |
222+ | 0.32 EUR |
SIP32431DR3-T1GE3 |
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Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70
Supply voltage: 1.5...5.5V DC
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: P-Channel
Case: SC70
Mounting: SMD
On-state resistance: 147mΩ
Number of channels: 1
Output current: 1.4A
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; P-Channel; SMD; SC70
Supply voltage: 1.5...5.5V DC
Kind of package: reel; tape
Type of integrated circuit: power switch
Kind of output: P-Channel
Case: SC70
Mounting: SMD
On-state resistance: 147mΩ
Number of channels: 1
Output current: 1.4A
Kind of integrated circuit: high-side
Anzahl je Verpackung: 1 Stücke
auf Bestellung 269 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
165+ | 0.43 EUR |
184+ | 0.39 EUR |
205+ | 0.35 EUR |
213+ | 0.34 EUR |
217+ | 0.33 EUR |
250+ | 0.32 EUR |
SIP32509DT-T1-GE3 |
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Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TSOT23
On-state resistance: 46mΩ
Kind of package: reel; tape
Supply voltage: 1.1...5.5V DC
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TSOT23
On-state resistance: 46mΩ
Kind of package: reel; tape
Supply voltage: 1.1...5.5V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 304 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
253+ | 0.28 EUR |
285+ | 0.25 EUR |
304+ | 0.23 EUR |
SIP32510DT-T1-GE3 |
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Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TSOT23
On-state resistance: 46mΩ
Kind of package: reel; tape
Supply voltage: 1.2...5.5V DC
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; TSOT23
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TSOT23
On-state resistance: 46mΩ
Kind of package: reel; tape
Supply voltage: 1.2...5.5V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1483 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
212+ | 0.34 EUR |
242+ | 0.3 EUR |
283+ | 0.25 EUR |
343+ | 0.21 EUR |
363+ | 0.2 EUR |
374+ | 0.19 EUR |
SIR186LDP-T1-RE3 |
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Hersteller: VISHAY
SIR186LDP-T1-RE3 SMD N channel transistors
SIR186LDP-T1-RE3 SMD N channel transistors
auf Bestellung 1295 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
126+ | 0.57 EUR |
134+ | 0.54 EUR |
3000+ | 0.52 EUR |
SIR422DP-T1-GE3 |
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Hersteller: VISHAY
SIR422DP-T1-GE3 SMD N channel transistors
SIR422DP-T1-GE3 SMD N channel transistors
auf Bestellung 2548 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.37 EUR |
77+ | 0.93 EUR |
82+ | 0.87 EUR |
84+ | 0.86 EUR |
SIR622DP-T1-RE3 |
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Hersteller: VISHAY
SIR622DP-T1-RE3 SMD N channel transistors
SIR622DP-T1-RE3 SMD N channel transistors
auf Bestellung 5662 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.94 EUR |
67+ | 1.07 EUR |
71+ | 1.02 EUR |
SIR626LDP-T1-RE3 |
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Hersteller: VISHAY
SIR626LDP-T1-RE3 SMD N channel transistors
SIR626LDP-T1-RE3 SMD N channel transistors
auf Bestellung 2209 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.3 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
500+ | 1.14 EUR |
SIRA06DP-T1-GE3 |
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Hersteller: VISHAY
SIRA06DP-T1-GE3 SMD N channel transistors
SIRA06DP-T1-GE3 SMD N channel transistors
auf Bestellung 1975 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
113+ | 0.63 EUR |
120+ | 0.6 EUR |
3000+ | 0.59 EUR |
SIRA10DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 140A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 140A
Power dissipation: 26W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 140A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Pulsed drain current: 140A
Power dissipation: 26W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2960 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.04 EUR |
89+ | 0.81 EUR |
106+ | 0.68 EUR |
112+ | 0.64 EUR |
250+ | 0.62 EUR |
SIRA14DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 130A
Power dissipation: 20W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 130A
Power dissipation: 20W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1906 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
103+ | 0.7 EUR |
208+ | 0.34 EUR |
220+ | 0.33 EUR |
2500+ | 0.31 EUR |
SIRA18ADP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24.5A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24.5A
Pulsed drain current: 70A
Power dissipation: 9.4W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24.5A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24.5A
Pulsed drain current: 70A
Power dissipation: 9.4W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2777 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
143+ | 0.5 EUR |
161+ | 0.45 EUR |
269+ | 0.27 EUR |
286+ | 0.25 EUR |
SIRA28BDP-T1-GE3 |
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Hersteller: VISHAY
SIRA28BDP-T1-GE3 SMD N channel transistors
SIRA28BDP-T1-GE3 SMD N channel transistors
auf Bestellung 2992 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
131+ | 0.55 EUR |
221+ | 0.32 EUR |
233+ | 0.31 EUR |
SIRA52ADP-T1-RE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 200A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 200A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2985 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.73 EUR |
49+ | 1.49 EUR |
53+ | 1.37 EUR |
63+ | 1.14 EUR |
67+ | 1.07 EUR |
SIRA90DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2433 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
46+ | 1.57 EUR |
76+ | 0.94 EUR |
80+ | 0.9 EUR |
1000+ | 0.86 EUR |
SIRA99DP-T1-GE3 |
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Hersteller: VISHAY
SIRA99DP-T1-GE3 SMD P channel transistors
SIRA99DP-T1-GE3 SMD P channel transistors
auf Bestellung 2438 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.03 EUR |
36+ | 1.99 EUR |
39+ | 1.87 EUR |
SiRC16DP-T1-GE3 |
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Hersteller: VISHAY
SIRC16DP-T1-GE3 SMD N channel transistors
SIRC16DP-T1-GE3 SMD N channel transistors
auf Bestellung 2943 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.86 EUR |
68+ | 1.06 EUR |
72+ | 1 EUR |
SiS406DN-T1-GE3 |
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Hersteller: VISHAY
SIS406DN-T1-GE3 SMD N channel transistors
SIS406DN-T1-GE3 SMD N channel transistors
auf Bestellung 2982 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
92+ | 0.79 EUR |
106+ | 0.68 EUR |
112+ | 0.64 EUR |
114+ | 0.63 EUR |
SIS412DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A; 10W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 10W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A; 10W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 10W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2916 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.8 EUR |
137+ | 0.52 EUR |
142+ | 0.5 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
SIS413DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A
Kind of channel: enhancement
Case: PowerPAK® 1212-8
Technology: TrenchFET®
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -70A
Drain-source voltage: -30V
Drain current: -18A
Gate charge: 110nC
On-state resistance: 13.2mΩ
Power dissipation: 33W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A
Kind of channel: enhancement
Case: PowerPAK® 1212-8
Technology: TrenchFET®
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -70A
Drain-source voltage: -30V
Drain current: -18A
Gate charge: 110nC
On-state resistance: 13.2mΩ
Power dissipation: 33W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3167 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
102+ | 0.7 EUR |
211+ | 0.34 EUR |
223+ | 0.32 EUR |
1000+ | 0.31 EUR |
SIS443DN-T1-GE3 |
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Hersteller: VISHAY
SIS443DN-T1-GE3 SMD P channel transistors
SIS443DN-T1-GE3 SMD P channel transistors
auf Bestellung 1779 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
36+ | 2.03 EUR |
76+ | 0.94 EUR |
80+ | 0.9 EUR |
1000+ | 0.86 EUR |
SIS892ADN-T1-GE3 |
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Hersteller: VISHAY
SIS892ADN-T1-GE3 SMD N channel transistors
SIS892ADN-T1-GE3 SMD N channel transistors
auf Bestellung 2842 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
104+ | 0.69 EUR |
110+ | 0.65 EUR |
1000+ | 0.63 EUR |
SISH625DN-T1-GE3 |
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Hersteller: VISHAY
SISH625DN-T1-GE3 SMD P channel transistors
SISH625DN-T1-GE3 SMD P channel transistors
auf Bestellung 5173 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.05 EUR |
148+ | 0.49 EUR |
156+ | 0.46 EUR |
SISS05DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -86.6A; 42W
Mounting: SMD
Technology: TrenchFET®
Pulsed drain current: -300A
Drain current: -86.6A
Drain-source voltage: -30V
Gate-source voltage: -20...16V
Gate charge: 115nC
On-state resistance: 5.8mΩ
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -86.6A; 42W
Mounting: SMD
Technology: TrenchFET®
Pulsed drain current: -300A
Drain current: -86.6A
Drain-source voltage: -30V
Gate-source voltage: -20...16V
Gate charge: 115nC
On-state resistance: 5.8mΩ
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2577 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.32 EUR |
61+ | 1.17 EUR |
62+ | 1.16 EUR |
68+ | 1.06 EUR |
100+ | 1.04 EUR |