Foto | Bezeichnung | Hersteller | Beschreibung |
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SI2343CDS-T1-GE3 | VISHAY |
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auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2347DS-T1-GE3 | VISHAY |
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auf Bestellung 2742 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2356DS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 4.3A Gate charge: 13nC On-state resistance: 70mΩ Power dissipation: 1.7W Gate-source voltage: ±12V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Technology: TrenchFET® Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1734 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2365EDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -4.5A Gate charge: 36nC On-state resistance: 32mΩ Power dissipation: 1.1W Gate-source voltage: ±8V Polarisation: unipolar Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Pulsed drain current: -20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 870 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2366DS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 5.8A Gate charge: 10nC On-state resistance: 36mΩ Power dissipation: 1.3W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2980 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2369DS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -7.6A Gate charge: 36nC On-state resistance: 29mΩ Power dissipation: 1.6W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Pulsed drain current: -80A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1341 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2374DS-T1-GE3 | VISHAY |
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auf Bestellung 2545 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2377EDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23; ESD Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Gate charge: 7.6nC On-state resistance: 61mΩ Power dissipation: 1.1W Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1850 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2392ADS-T1-GE3 | VISHAY |
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auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2393DS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -50A Drain-source voltage: -30V Drain current: -7.5A Gate charge: 25.2nC On-state resistance: 33mΩ Power dissipation: 2.5W Kind of package: reel; tape Case: SOT23 Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3244 Stücke: Lieferzeit 7-14 Tag (e) |
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Si3407DV-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -25A; 4.2W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -25A Power dissipation: 4.2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 32.7mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2631 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3421DV-T1-GE3 | VISHAY |
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auf Bestellung 2807 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3443BDV-T1-E3 | VISHAY |
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auf Bestellung 1349 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3457CDV-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Case: TSOP6 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -4.1A Gate charge: 15nC On-state resistance: 113mΩ Power dissipation: 3W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1062 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3458BDV-T1-GE3 | VISHAY |
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auf Bestellung 1439 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3459BDV-T1-GE3 | VISHAY |
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auf Bestellung 298 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3460DDV-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.9A Pulsed drain current: 20A Power dissipation: 1.7W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 390 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3473CDV-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: TrenchFET® Case: TSOP6 Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -12V Drain current: -8A Gate charge: 65nC On-state resistance: 36mΩ Power dissipation: 4.2W Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3483CDV-T1-GE3 | VISHAY |
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auf Bestellung 2064 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3552DV-T1-E3 | VISHAY |
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auf Bestellung 2873 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3865DDV-T1-GE3 | VISHAY |
![]() Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; TSOP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.8A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP6 On-state resistance: 45mΩ Kind of package: reel; tape Supply voltage: 1.5...12V DC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2437 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4134DY-T1-GE3 | VISHAY |
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auf Bestellung 6881 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4162DY-T1-GE3 | VISHAY |
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auf Bestellung 842 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4174DY-T1-GE3 | VISHAY |
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auf Bestellung 1692 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4178DY-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.7A; 5W; SO8 Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SO8 Technology: TrenchFET® Gate charge: 12nC On-state resistance: 33mΩ Power dissipation: 5W Drain current: 6.7A Gate-source voltage: ±25V Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2452 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4288DY-T1-GE3 | VISHAY |
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auf Bestellung 4399 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4401BDY-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -8.3A; Idm: -50A Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Technology: TrenchFET® Pulsed drain current: -50A Drain-source voltage: -40V Drain current: -8.3A Gate charge: 55nC On-state resistance: 14mΩ Power dissipation: 2.9W Gate-source voltage: ±20V Case: SO8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4401DDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -16.1A; Idm: -50A Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Technology: TrenchFET® Pulsed drain current: -50A Drain-source voltage: -40V Drain current: -16.1A Gate charge: 95nC On-state resistance: 15mΩ Power dissipation: 4W Gate-source voltage: ±20V Case: SO8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 202 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4401FDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Technology: TrenchFET® Pulsed drain current: -80A Drain-source voltage: -40V Drain current: -11A Gate charge: 31nC On-state resistance: 18.3mΩ Power dissipation: 3.2W Gate-source voltage: ±20V Case: SO8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2134 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4403CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -13.4A Power dissipation: 5W Case: SO8 Gate-source voltage: ±8V On-state resistance: 25mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -40A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2097 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4403DDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12.3A; 3.2W; SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12.3A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±8V On-state resistance: 14mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1706 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4425DDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -15.7A; 3.6W; SO8 Kind of channel: enhancement Mounting: SMD Technology: TrenchFET® Type of transistor: P-MOSFET Kind of package: reel; tape Case: SO8 Polarisation: unipolar Drain-source voltage: -30V Drain current: -15.7A Gate charge: 27nC On-state resistance: 9.8mΩ Power dissipation: 3.6W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2847 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4431BDY-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 0.9W Case: SO8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 689 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4431CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.2A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.2A Pulsed drain current: -30A Power dissipation: 2.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2424 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4435DDY-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.5A Pulsed drain current: -50A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1132 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4435DDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.5A Pulsed drain current: -50A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2339 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4435FDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -12.6A Pulsed drain current: -32A Power dissipation: 4.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2420 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4447ADY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -7.2A Power dissipation: 4.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 62mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 664 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4459ADY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -23.5A; 5W; SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -23.5A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 61nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 78 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4463CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -18.6A Pulsed drain current: -60A Power dissipation: 5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 14mΩ Mounting: SMD Gate charge: 162nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1592 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4483ADY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -15.4A; 3.8W; SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -15.4A Power dissipation: 3.8W Case: SO8 Gate-source voltage: ±25V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 44.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1707 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4532CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4.9/-3.4A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.9/-3.4A Power dissipation: 1.78W Case: SO8 Gate-source voltage: ±20V On-state resistance: 47/89mΩ Mounting: SMD Gate charge: 9/12nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2320 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4559ADY-T1-GE3 | VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60/-60V; 4.3/-3.2A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 4.3/-3.2A Power dissipation: 3.4/3.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 150/72mΩ Mounting: SMD Gate charge: 22/20nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1995 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4599DY-T1-GE3 | VISHAY |
![]() Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 40/-40V; 6.8/-5.8A Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 6.8/-5.8A Power dissipation: 3.1/3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 62/42.5mΩ Mounting: SMD Gate charge: 38/20nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 632 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4686DY-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.5A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.5A Pulsed drain current: 50A Power dissipation: 5.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1224 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4800BDY-T1-E3 | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 40A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 735 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4835DDY-T1-E3 | VISHAY |
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auf Bestellung 2548 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4835DDY-T1-GE3 | VISHAY |
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auf Bestellung 584 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4840BDY-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 9.9A; Idm: 50A Kind of package: reel; tape Kind of channel: enhancement Case: SO8 Type of transistor: N-MOSFET Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 50nC On-state resistance: 12mΩ Power dissipation: 3.8W Drain current: 9.9A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 50A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1930 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4848DY-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SO8 Technology: TrenchFET® Gate charge: 21nC On-state resistance: 95mΩ Power dissipation: 3W Drain current: 3.7A Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 150V Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2044 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4850EY-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W Polarisation: unipolar Case: SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Technology: TrenchFET® Gate charge: 27nC On-state resistance: 22mΩ Power dissipation: 1.2W Drain current: 6A Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1134 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4925DDY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.9A; 5W; SO8 Case: SO8 Technology: TrenchFET® Type of transistor: P-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.9A Gate charge: 50nC On-state resistance: 41mΩ Power dissipation: 5W Gate-source voltage: ±20V Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 295 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4936CDY-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Pulsed drain current: 20A Drain current: 4.6A Gate charge: 9nC Type of transistor: N-MOSFET x2 On-state resistance: 50mΩ Power dissipation: 1.5W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2921 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4948BEY-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W Mounting: SMD Polarisation: unipolar Drain-source voltage: -60V Kind of package: reel; tape Pulsed drain current: -25A Drain current: -2.4A Gate charge: 22nC Type of transistor: P-MOSFET x2 On-state resistance: 0.15Ω Power dissipation: 0.95W Gate-source voltage: ±20V Case: SO8 Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2241 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7113DN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -3.5A; Idm: -20A Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 33W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: -100V Pulsed drain current: -20A Drain current: -3.5A Gate charge: 55nC On-state resistance: 0.134Ω Gate-source voltage: ±20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2542 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7115DN-T1-GE3 | VISHAY |
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auf Bestellung 1843 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7121ADN-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -50A Case: PowerPAK® 1212-8 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -50A Drain-source voltage: -30V Drain current: -12A Gate charge: 50nC On-state resistance: 15mΩ Power dissipation: 17.8W Gate-source voltage: ±25V Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2564 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7149ADP-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W Technology: TrenchFET® Case: PowerPAK® SO8 Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain current: -50A Drain-source voltage: -30V Gate charge: 43.1nC On-state resistance: 9.5mΩ Gate-source voltage: ±25V Power dissipation: 31W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3571 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7153DN-T1-GE3 | VISHAY |
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auf Bestellung 2741 Stücke: Lieferzeit 7-14 Tag (e) |
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SI7288DP-T1-GE3 | VISHAY |
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auf Bestellung 2349 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2343CDS-T1-GE3 |
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Hersteller: VISHAY
SI2343CDS-T1-GE3 SMD P channel transistors
SI2343CDS-T1-GE3 SMD P channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
92+ | 0.78 EUR |
288+ | 0.25 EUR |
305+ | 0.23 EUR |
SI2347DS-T1-GE3 |
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Hersteller: VISHAY
SI2347DS-T1-GE3 SMD P channel transistors
SI2347DS-T1-GE3 SMD P channel transistors
auf Bestellung 2742 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
153+ | 0.47 EUR |
455+ | 0.16 EUR |
481+ | 0.15 EUR |
SI2356DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 4.3A
Gate charge: 13nC
On-state resistance: 70mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: TrenchFET®
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 4.3A
Gate charge: 13nC
On-state resistance: 70mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: TrenchFET®
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1734 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
217+ | 0.33 EUR |
298+ | 0.24 EUR |
338+ | 0.21 EUR |
481+ | 0.15 EUR |
511+ | 0.14 EUR |
SI2365EDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 36nC
On-state resistance: 32mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 36nC
On-state resistance: 32mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 870 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
283+ | 0.25 EUR |
407+ | 0.18 EUR |
477+ | 0.15 EUR |
633+ | 0.11 EUR |
1000+ | 0.1 EUR |
SI2366DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 5.8A
Gate charge: 10nC
On-state resistance: 36mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 5.8A
Gate charge: 10nC
On-state resistance: 36mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
153+ | 0.47 EUR |
205+ | 0.35 EUR |
368+ | 0.19 EUR |
388+ | 0.18 EUR |
SI2369DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -7.6A
Gate charge: 36nC
On-state resistance: 29mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -7.6A
Gate charge: 36nC
On-state resistance: 29mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1341 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
164+ | 0.44 EUR |
219+ | 0.33 EUR |
291+ | 0.25 EUR |
307+ | 0.23 EUR |
500+ | 0.22 EUR |
SI2374DS-T1-GE3 |
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Hersteller: VISHAY
SI2374DS-T1-GE3 SMD N channel transistors
SI2374DS-T1-GE3 SMD N channel transistors
auf Bestellung 2545 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
176+ | 0.41 EUR |
404+ | 0.18 EUR |
428+ | 0.17 EUR |
1000+ | 0.16 EUR |
SI2377EDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23; ESD
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 7.6nC
On-state resistance: 61mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23; ESD
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 7.6nC
On-state resistance: 61mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1850 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
115+ | 0.63 EUR |
131+ | 0.55 EUR |
291+ | 0.25 EUR |
309+ | 0.23 EUR |
1000+ | 0.22 EUR |
SI2392ADS-T1-GE3 |
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Hersteller: VISHAY
SI2392ADS-T1-GE3 SMD N channel transistors
SI2392ADS-T1-GE3 SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
92+ | 0.78 EUR |
277+ | 0.26 EUR |
293+ | 0.24 EUR |
SI2393DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -30V
Drain current: -7.5A
Gate charge: 25.2nC
On-state resistance: 33mΩ
Power dissipation: 2.5W
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -30V
Drain current: -7.5A
Gate charge: 25.2nC
On-state resistance: 33mΩ
Power dissipation: 2.5W
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3244 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
160+ | 0.45 EUR |
219+ | 0.33 EUR |
341+ | 0.21 EUR |
360+ | 0.2 EUR |
1000+ | 0.19 EUR |
Si3407DV-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -25A; 4.2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -25A; 4.2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2631 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
202+ | 0.35 EUR |
221+ | 0.32 EUR |
235+ | 0.3 EUR |
SI3421DV-T1-GE3 |
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Hersteller: VISHAY
SI3421DV-T1-GE3 SMD P channel transistors
SI3421DV-T1-GE3 SMD P channel transistors
auf Bestellung 2807 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
96+ | 0.75 EUR |
257+ | 0.28 EUR |
271+ | 0.26 EUR |
SI3443BDV-T1-E3 | ![]() |
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Hersteller: VISHAY
SI3443BDV-T1-E3 SMD P channel transistors
SI3443BDV-T1-E3 SMD P channel transistors
auf Bestellung 1349 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
177+ | 0.4 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
SI3457CDV-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Case: TSOP6
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -4.1A
Gate charge: 15nC
On-state resistance: 113mΩ
Power dissipation: 3W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Case: TSOP6
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -4.1A
Gate charge: 15nC
On-state resistance: 113mΩ
Power dissipation: 3W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1062 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
125+ | 0.57 EUR |
158+ | 0.45 EUR |
319+ | 0.22 EUR |
338+ | 0.21 EUR |
3000+ | 0.2 EUR |
SI3458BDV-T1-GE3 |
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Hersteller: VISHAY
SI3458BDV-T1-GE3 SMD N channel transistors
SI3458BDV-T1-GE3 SMD N channel transistors
auf Bestellung 1439 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.16 EUR |
169+ | 0.42 EUR |
178+ | 0.4 EUR |
6000+ | 0.39 EUR |
SI3459BDV-T1-GE3 |
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Hersteller: VISHAY
SI3459BDV-T1-GE3 SMD P channel transistors
SI3459BDV-T1-GE3 SMD P channel transistors
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.78 EUR |
228+ | 0.31 EUR |
241+ | 0.3 EUR |
9000+ | 0.29 EUR |
SI3460DDV-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 390 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
214+ | 0.33 EUR |
258+ | 0.28 EUR |
295+ | 0.24 EUR |
329+ | 0.22 EUR |
390+ | 0.19 EUR |
SI3473CDV-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: TrenchFET®
Case: TSOP6
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -12V
Drain current: -8A
Gate charge: 65nC
On-state resistance: 36mΩ
Power dissipation: 4.2W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: TrenchFET®
Case: TSOP6
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -12V
Drain current: -8A
Gate charge: 65nC
On-state resistance: 36mΩ
Power dissipation: 4.2W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
93+ | 0.78 EUR |
211+ | 0.34 EUR |
223+ | 0.32 EUR |
3000+ | 0.31 EUR |
SI3483CDV-T1-GE3 |
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Hersteller: VISHAY
SI3483CDV-T1-GE3 SMD P channel transistors
SI3483CDV-T1-GE3 SMD P channel transistors
auf Bestellung 2064 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
196+ | 0.37 EUR |
207+ | 0.35 EUR |
30000+ | 0.33 EUR |
SI3552DV-T1-E3 |
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Hersteller: VISHAY
SI3552DV-T1-E3 Multi channel transistors
SI3552DV-T1-E3 Multi channel transistors
auf Bestellung 2873 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.44 EUR |
149+ | 0.48 EUR |
158+ | 0.45 EUR |
SI3865DDV-T1-GE3 |
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Hersteller: VISHAY
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.8A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 45mΩ
Kind of package: reel; tape
Supply voltage: 1.5...12V DC
Anzahl je Verpackung: 1 Stücke
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.8A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.8A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 45mΩ
Kind of package: reel; tape
Supply voltage: 1.5...12V DC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2437 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
114+ | 0.63 EUR |
136+ | 0.53 EUR |
191+ | 0.38 EUR |
201+ | 0.36 EUR |
250+ | 0.34 EUR |
SI4134DY-T1-GE3 |
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Hersteller: VISHAY
SI4134DY-T1-GE3 SMD N channel transistors
SI4134DY-T1-GE3 SMD N channel transistors
auf Bestellung 6881 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
250+ | 0.29 EUR |
265+ | 0.27 EUR |
SI4162DY-T1-GE3 |
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Hersteller: VISHAY
SI4162DY-T1-GE3 SMD N channel transistors
SI4162DY-T1-GE3 SMD N channel transistors
auf Bestellung 842 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
69+ | 1.05 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
SI4174DY-T1-GE3 |
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Hersteller: VISHAY
SI4174DY-T1-GE3 SMD N channel transistors
SI4174DY-T1-GE3 SMD N channel transistors
auf Bestellung 1692 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
141+ | 0.51 EUR |
148+ | 0.48 EUR |
1000+ | 0.46 EUR |
SI4178DY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.7A; 5W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Technology: TrenchFET®
Gate charge: 12nC
On-state resistance: 33mΩ
Power dissipation: 5W
Drain current: 6.7A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.7A; 5W; SO8
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SO8
Technology: TrenchFET®
Gate charge: 12nC
On-state resistance: 33mΩ
Power dissipation: 5W
Drain current: 6.7A
Gate-source voltage: ±25V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2452 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
151+ | 0.48 EUR |
163+ | 0.44 EUR |
221+ | 0.32 EUR |
233+ | 0.31 EUR |
2500+ | 0.3 EUR |
SI4288DY-T1-GE3 |
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Hersteller: VISHAY
SI4288DY-T1-GE3 Multi channel transistors
SI4288DY-T1-GE3 Multi channel transistors
auf Bestellung 4399 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
1000+ | 0.96 EUR |
SI4401BDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -8.3A; Idm: -50A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: TrenchFET®
Pulsed drain current: -50A
Drain-source voltage: -40V
Drain current: -8.3A
Gate charge: 55nC
On-state resistance: 14mΩ
Power dissipation: 2.9W
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -8.3A; Idm: -50A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: TrenchFET®
Pulsed drain current: -50A
Drain-source voltage: -40V
Drain current: -8.3A
Gate charge: 55nC
On-state resistance: 14mΩ
Power dissipation: 2.9W
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.51 EUR |
13+ | 5.51 EUR |
35+ | 2.04 EUR |
500+ | 1.23 EUR |
SI4401DDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -16.1A; Idm: -50A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: TrenchFET®
Pulsed drain current: -50A
Drain-source voltage: -40V
Drain current: -16.1A
Gate charge: 95nC
On-state resistance: 15mΩ
Power dissipation: 4W
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -16.1A; Idm: -50A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: TrenchFET®
Pulsed drain current: -50A
Drain-source voltage: -40V
Drain current: -16.1A
Gate charge: 95nC
On-state resistance: 15mΩ
Power dissipation: 4W
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.2 EUR |
84+ | 0.86 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
1000+ | 0.36 EUR |
SI4401FDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: TrenchFET®
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -11A
Gate charge: 31nC
On-state resistance: 18.3mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -80A
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Technology: TrenchFET®
Pulsed drain current: -80A
Drain-source voltage: -40V
Drain current: -11A
Gate charge: 31nC
On-state resistance: 18.3mΩ
Power dissipation: 3.2W
Gate-source voltage: ±20V
Case: SO8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2134 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.17 EUR |
72+ | 1 EUR |
80+ | 0.9 EUR |
126+ | 0.57 EUR |
133+ | 0.54 EUR |
SI4403CDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -13.4A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -40A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -13.4A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -13.4A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2097 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
100+ | 0.72 EUR |
108+ | 0.66 EUR |
113+ | 0.64 EUR |
127+ | 0.56 EUR |
135+ | 0.53 EUR |
SI4403DDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12.3A; 3.2W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12.3A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12.3A; 3.2W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12.3A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1706 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
154+ | 0.47 EUR |
161+ | 0.44 EUR |
169+ | 0.42 EUR |
SI4425DDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -15.7A; 3.6W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: TrenchFET®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.7A
Gate charge: 27nC
On-state resistance: 9.8mΩ
Power dissipation: 3.6W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -15.7A; 3.6W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: TrenchFET®
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SO8
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.7A
Gate charge: 27nC
On-state resistance: 9.8mΩ
Power dissipation: 3.6W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2847 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
91+ | 0.79 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
1000+ | 0.39 EUR |
SI4431BDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 0.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 0.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 689 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.54 EUR |
66+ | 1.09 EUR |
93+ | 0.77 EUR |
98+ | 0.73 EUR |
500+ | 0.7 EUR |
SI4431CDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.2A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.2A
Pulsed drain current: -30A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.2A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.2A
Pulsed drain current: -30A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2424 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
84+ | 0.86 EUR |
91+ | 0.79 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
2500+ | 0.4 EUR |
SI4435DDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Pulsed drain current: -50A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Pulsed drain current: -50A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1132 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
168+ | 0.43 EUR |
184+ | 0.39 EUR |
SI4435DDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Pulsed drain current: -50A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Pulsed drain current: -50A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2339 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
90+ | 0.8 EUR |
211+ | 0.34 EUR |
224+ | 0.32 EUR |
5000+ | 0.31 EUR |
SI4435FDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Pulsed drain current: -32A
Power dissipation: 4.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12.6A
Pulsed drain current: -32A
Power dissipation: 4.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2420 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
160+ | 0.45 EUR |
217+ | 0.33 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
500+ | 0.21 EUR |
SI4447ADY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.2A
Power dissipation: 4.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -7.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -7.2A
Power dissipation: 4.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 664 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
104+ | 0.69 EUR |
180+ | 0.4 EUR |
191+ | 0.38 EUR |
500+ | 0.36 EUR |
SI4459ADY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -23.5A; 5W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -23.5A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -23.5A; 5W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -23.5A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
35+ | 2.04 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
SI4463CDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18.6A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 162nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -18.6A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18.6A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 162nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1592 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.37 EUR |
79+ | 0.92 EUR |
109+ | 0.66 EUR |
116+ | 0.62 EUR |
250+ | 0.6 EUR |
SI4483ADY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -15.4A; 3.8W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.4A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -15.4A; 3.8W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.4A
Power dissipation: 3.8W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 44.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1707 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
52+ | 1.4 EUR |
57+ | 1.26 EUR |
62+ | 1.16 EUR |
65+ | 1.12 EUR |
66+ | 1.09 EUR |
100+ | 1.04 EUR |
SI4532CDY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4.9/-3.4A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.9/-3.4A
Power dissipation: 1.78W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 47/89mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4.9/-3.4A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.9/-3.4A
Power dissipation: 1.78W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 47/89mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2320 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
61+ | 1.19 EUR |
84+ | 0.85 EUR |
124+ | 0.58 EUR |
214+ | 0.33 EUR |
227+ | 0.32 EUR |
2500+ | 0.3 EUR |
SI4559ADY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60/-60V; 4.3/-3.2A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 4.3/-3.2A
Power dissipation: 3.4/3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 150/72mΩ
Mounting: SMD
Gate charge: 22/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 60/-60V; 4.3/-3.2A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 4.3/-3.2A
Power dissipation: 3.4/3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 150/72mΩ
Mounting: SMD
Gate charge: 22/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1995 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
55+ | 1.3 EUR |
125+ | 0.57 EUR |
132+ | 0.54 EUR |
SI4599DY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 40/-40V; 6.8/-5.8A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.8/-5.8A
Power dissipation: 3.1/3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62/42.5mΩ
Mounting: SMD
Gate charge: 38/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 40/-40V; 6.8/-5.8A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 6.8/-5.8A
Power dissipation: 3.1/3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 62/42.5mΩ
Mounting: SMD
Gate charge: 38/20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 632 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.26 EUR |
76+ | 0.94 EUR |
184+ | 0.39 EUR |
195+ | 0.37 EUR |
2500+ | 0.36 EUR |
SI4686DY-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 50A
Power dissipation: 5.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 50A
Power dissipation: 5.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1224 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
101+ | 0.71 EUR |
141+ | 0.51 EUR |
149+ | 0.48 EUR |
2500+ | 0.47 EUR |
5000+ | 0.46 EUR |
SI4800BDY-T1-E3 | ![]() |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 40A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 735 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
118+ | 0.61 EUR |
195+ | 0.37 EUR |
206+ | 0.35 EUR |
SI4835DDY-T1-E3 |
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Hersteller: VISHAY
SI4835DDY-T1-E3 SMD P channel transistors
SI4835DDY-T1-E3 SMD P channel transistors
auf Bestellung 2548 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.85 EUR |
108+ | 0.67 EUR |
114+ | 0.63 EUR |
SI4835DDY-T1-GE3 |
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Hersteller: VISHAY
SI4835DDY-T1-GE3 SMD P channel transistors
SI4835DDY-T1-GE3 SMD P channel transistors
auf Bestellung 584 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
124+ | 0.58 EUR |
132+ | 0.54 EUR |
2500+ | 0.52 EUR |
SI4840BDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 9.9A; Idm: 50A
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 12mΩ
Power dissipation: 3.8W
Drain current: 9.9A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 50A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 9.9A; Idm: 50A
Kind of package: reel; tape
Kind of channel: enhancement
Case: SO8
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 50nC
On-state resistance: 12mΩ
Power dissipation: 3.8W
Drain current: 9.9A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 50A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1930 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
47+ | 1.53 EUR |
53+ | 1.36 EUR |
57+ | 1.27 EUR |
97+ | 0.74 EUR |
102+ | 0.7 EUR |
2500+ | 0.69 EUR |
5000+ | 0.68 EUR |
SI4848DY-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
Technology: TrenchFET®
Gate charge: 21nC
On-state resistance: 95mΩ
Power dissipation: 3W
Drain current: 3.7A
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 150V
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SO8
Technology: TrenchFET®
Gate charge: 21nC
On-state resistance: 95mΩ
Power dissipation: 3W
Drain current: 3.7A
Gate-source voltage: ±20V
Pulsed drain current: 25A
Drain-source voltage: 150V
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2044 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
50+ | 1.44 EUR |
72+ | 1 EUR |
75+ | 0.96 EUR |
500+ | 0.92 EUR |
SI4850EY-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W
Polarisation: unipolar
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 1.2W
Drain current: 6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W
Polarisation: unipolar
Case: SO8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Gate charge: 27nC
On-state resistance: 22mΩ
Power dissipation: 1.2W
Drain current: 6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1134 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.46 EUR |
35+ | 2.09 EUR |
38+ | 1.89 EUR |
110+ | 0.65 EUR |
116+ | 0.62 EUR |
SI4925DDY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.9A; 5W; SO8
Case: SO8
Technology: TrenchFET®
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Gate charge: 50nC
On-state resistance: 41mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.9A; 5W; SO8
Case: SO8
Technology: TrenchFET®
Type of transistor: P-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.9A
Gate charge: 50nC
On-state resistance: 41mΩ
Power dissipation: 5W
Gate-source voltage: ±20V
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 295 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
60+ | 1.21 EUR |
66+ | 1.09 EUR |
135+ | 0.53 EUR |
143+ | 0.5 EUR |
1000+ | 0.48 EUR |
SI4936CDY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Pulsed drain current: 20A
Drain current: 4.6A
Gate charge: 9nC
Type of transistor: N-MOSFET x2
On-state resistance: 50mΩ
Power dissipation: 1.5W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2921 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
94+ | 0.76 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
SI4948BEY-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Kind of package: reel; tape
Pulsed drain current: -25A
Drain current: -2.4A
Gate charge: 22nC
Type of transistor: P-MOSFET x2
On-state resistance: 0.15Ω
Power dissipation: 0.95W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Kind of package: reel; tape
Pulsed drain current: -25A
Drain current: -2.4A
Gate charge: 22nC
Type of transistor: P-MOSFET x2
On-state resistance: 0.15Ω
Power dissipation: 0.95W
Gate-source voltage: ±20V
Case: SO8
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2241 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.06 EUR |
47+ | 1.53 EUR |
130+ | 0.55 EUR |
137+ | 0.52 EUR |
SI7113DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 33W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -100V
Pulsed drain current: -20A
Drain current: -3.5A
Gate charge: 55nC
On-state resistance: 0.134Ω
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 33W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: -100V
Pulsed drain current: -20A
Drain current: -3.5A
Gate charge: 55nC
On-state resistance: 0.134Ω
Gate-source voltage: ±20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2542 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.9 EUR |
46+ | 1.57 EUR |
65+ | 1.1 EUR |
69+ | 1.04 EUR |
1000+ | 1 EUR |
SI7115DN-T1-GE3 |
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Hersteller: VISHAY
SI7115DN-T1-GE3 SMD P channel transistors
SI7115DN-T1-GE3 SMD P channel transistors
auf Bestellung 1843 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.19 EUR |
59+ | 1.23 EUR |
62+ | 1.16 EUR |
3000+ | 1.12 EUR |
SI7121ADN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -50A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -30V
Drain current: -12A
Gate charge: 50nC
On-state resistance: 15mΩ
Power dissipation: 17.8W
Gate-source voltage: ±25V
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -50A
Case: PowerPAK® 1212-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -30V
Drain current: -12A
Gate charge: 50nC
On-state resistance: 15mΩ
Power dissipation: 17.8W
Gate-source voltage: ±25V
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2564 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
105+ | 0.68 EUR |
116+ | 0.62 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
1000+ | 0.36 EUR |
SI7149ADP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W
Technology: TrenchFET®
Case: PowerPAK® SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
Gate charge: 43.1nC
On-state resistance: 9.5mΩ
Gate-source voltage: ±25V
Power dissipation: 31W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -50A; 31W
Technology: TrenchFET®
Case: PowerPAK® SO8
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain current: -50A
Drain-source voltage: -30V
Gate charge: 43.1nC
On-state resistance: 9.5mΩ
Gate-source voltage: ±25V
Power dissipation: 31W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3571 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
79+ | 0.91 EUR |
138+ | 0.52 EUR |
146+ | 0.49 EUR |
1000+ | 0.47 EUR |
SI7153DN-T1-GE3 |
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Hersteller: VISHAY
SI7153DN-T1-GE3 SMD P channel transistors
SI7153DN-T1-GE3 SMD P channel transistors
auf Bestellung 2741 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.15 EUR |
197+ | 0.36 EUR |
208+ | 0.34 EUR |
SI7288DP-T1-GE3 |
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Hersteller: VISHAY
SI7288DP-T1-GE3 Multi channel transistors
SI7288DP-T1-GE3 Multi channel transistors
auf Bestellung 2349 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.92 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |