Foto | Bezeichnung | Hersteller | Beschreibung |
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SI1062X-T1-GE3 | VISHAY |
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auf Bestellung 4844 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1302DL-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.48A Pulsed drain current: 1.5A Power dissipation: 0.18W Case: SC70; SOT323 Gate-source voltage: ±20V On-state resistance: 0.48Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1308EDL-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD Power dissipation: 0.3W Mounting: SMD Type of transistor: N-MOSFET Case: SC70; SOT323 Kind of package: reel; tape Polarisation: unipolar Gate charge: 4.1nC On-state resistance: 132mΩ Drain current: 1.4A Pulsed drain current: 6A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1858 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1317DL-T1-GE3 | VISHAY |
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auf Bestellung 1836 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1442DH-T1-GE3 | VISHAY |
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auf Bestellung 2720 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1443EDH-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; ESD Case: SC70; SOT323 Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Drain-source voltage: -30V Pulsed drain current: -15A Drain current: -4A Gate charge: 28nC On-state resistance: 54mΩ Power dissipation: 1.8W Gate-source voltage: ±12V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2970 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1902CDL-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.27W Case: SC70-6; SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.235Ω Drain current: 0.9A Gate charge: 2nC Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2500 Stücke: Lieferzeit 7-14 Tag (e) |
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Si2300DS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 15A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.6A Pulsed drain current: 15A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 68mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2566 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2301BDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.2A Pulsed drain current: -10A Power dissipation: 0.45W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2301CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -10A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4484 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2302CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2027 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2302DDS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3399 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2303CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1750 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2304DDS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 2.1nC On-state resistance: 75mΩ Power dissipation: 1.1W Drain current: 3.3A Gate-source voltage: ±20V Drain-source voltage: 30V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4406 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2305CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -3.5A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 65mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1848 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2306BDS-T1-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 3.5A Gate charge: 4.5nC On-state resistance: 65mΩ Power dissipation: 1.25W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2012 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2307CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Power dissipation: 1.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 138mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2317 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2308BDS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.8A Pulsed drain current: 8A Power dissipation: 1.06W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 192mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 6.8nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 261 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2308CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.6A Pulsed drain current: 6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 144mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5176 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2309CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -1.3A; Idm: -8A; 1.7W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.3A Pulsed drain current: -8A Power dissipation: 1.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9380 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2312CDS-T1-GE3 | VISHAY |
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auf Bestellung 333 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2315BDS-T1-E3 | VISHAY |
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auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2315BDS-T1-GE3 | VISHAY |
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auf Bestellung 2260 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2318CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 4.5A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3141 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2318DS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; Idm: 16A; 0.75W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 0.75W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1397 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2319CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.5A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 108mΩ Mounting: SMD Gate charge: 13.6nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4072 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2319DDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -3.6A Pulsed drain current: -15A Power dissipation: 1.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 603 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2319DS-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -2.4A Pulsed drain current: -12A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2663 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2319DS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -2.4A Pulsed drain current: -12A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1928 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2323CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; Idm: -20A; 2.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Power dissipation: 2.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 63mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1685 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2323DDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 68mΩ Mounting: SMD Gate charge: 13.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2439 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2323DS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 68mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 63 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2324DS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 234mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.9nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11378 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2328DS-T1-GE3 | VISHAY |
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auf Bestellung 2764 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2329DS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -6A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±5V On-state resistance: 30mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 11.8nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2535 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2333CDS-T1-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.7A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.7A Pulsed drain current: -20A Power dissipation: 2.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 35mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1385 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2333CDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 2.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.7A Pulsed drain current: -20A Power dissipation: 2.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 35mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3120 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2333DDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.2A Pulsed drain current: -20A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 890 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2336DS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.1A Gate charge: 5.7nC On-state resistance: 52mΩ Power dissipation: 1.1W Gate-source voltage: ±8V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 883 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2337DS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -80V; -1.75A; Idm: -7A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -1.75A Pulsed drain current: -7A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1961 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2338DS-T1-GE3 | VISHAY |
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auf Bestellung 3144 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2342DS-T1-GE3 | VISHAY |
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auf Bestellung 1178 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2343CDS-T1-GE3 | VISHAY |
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auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2347DS-T1-GE3 | VISHAY |
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auf Bestellung 2742 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2356DS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 40V Drain current: 4.3A Gate charge: 13nC On-state resistance: 70mΩ Power dissipation: 1.7W Gate-source voltage: ±12V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Technology: TrenchFET® Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1734 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2365EDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -4.5A Gate charge: 36nC On-state resistance: 32mΩ Power dissipation: 1.1W Gate-source voltage: ±8V Polarisation: unipolar Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Pulsed drain current: -20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 870 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2366DS-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 5.8A Gate charge: 10nC On-state resistance: 36mΩ Power dissipation: 1.3W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2980 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2369DS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Drain current: -7.6A Gate charge: 36nC On-state resistance: 29mΩ Power dissipation: 1.6W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Pulsed drain current: -80A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1341 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2374DS-T1-GE3 | VISHAY |
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auf Bestellung 2545 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2377EDS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23; ESD Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Gate charge: 7.6nC On-state resistance: 61mΩ Power dissipation: 1.1W Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1850 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2392ADS-T1-GE3 | VISHAY |
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auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2393DS-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A Mounting: SMD Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -50A Drain-source voltage: -30V Drain current: -7.5A Gate charge: 25.2nC On-state resistance: 33mΩ Power dissipation: 2.5W Kind of package: reel; tape Case: SOT23 Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3244 Stücke: Lieferzeit 7-14 Tag (e) |
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Si3407DV-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -25A; 4.2W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -25A Power dissipation: 4.2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 32.7mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2631 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3421DV-T1-GE3 | VISHAY |
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auf Bestellung 2807 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3443BDV-T1-E3 | VISHAY |
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auf Bestellung 1349 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3457CDV-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Case: TSOP6 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -20A Drain current: -4.1A Gate charge: 15nC On-state resistance: 113mΩ Power dissipation: 3W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1062 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3458BDV-T1-GE3 | VISHAY |
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auf Bestellung 1439 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3459BDV-T1-GE3 | VISHAY |
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auf Bestellung 298 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3460DDV-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.9A Pulsed drain current: 20A Power dissipation: 1.7W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 390 Stücke: Lieferzeit 7-14 Tag (e) |
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SI3473CDV-T1-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: TrenchFET® Case: TSOP6 Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -12V Drain current: -8A Gate charge: 65nC On-state resistance: 36mΩ Power dissipation: 4.2W Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
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SI1062X-T1-GE3 |
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Hersteller: VISHAY
SI1062X-T1-GE3 SMD N channel transistors
SI1062X-T1-GE3 SMD N channel transistors
auf Bestellung 4844 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
234+ | 0.31 EUR |
798+ | 0.09 EUR |
844+ | 0.085 EUR |
6000+ | 0.082 EUR |
SI1302DL-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Pulsed drain current: 1.5A
Power dissipation: 0.18W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.48A
Pulsed drain current: 1.5A
Power dissipation: 0.18W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
150+ | 0.48 EUR |
168+ | 0.43 EUR |
350+ | 0.2 EUR |
371+ | 0.19 EUR |
SI1308EDL-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD
Power dissipation: 0.3W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SC70; SOT323
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 4.1nC
On-state resistance: 132mΩ
Drain current: 1.4A
Pulsed drain current: 6A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD
Power dissipation: 0.3W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SC70; SOT323
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 4.1nC
On-state resistance: 132mΩ
Drain current: 1.4A
Pulsed drain current: 6A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1858 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
191+ | 0.38 EUR |
224+ | 0.32 EUR |
256+ | 0.28 EUR |
382+ | 0.19 EUR |
404+ | 0.18 EUR |
1000+ | 0.17 EUR |
SI1317DL-T1-GE3 |
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Hersteller: VISHAY
SI1317DL-T1-GE3 SMD P channel transistors
SI1317DL-T1-GE3 SMD P channel transistors
auf Bestellung 1836 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
109+ | 0.66 EUR |
417+ | 0.17 EUR |
443+ | 0.16 EUR |
SI1442DH-T1-GE3 |
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Hersteller: VISHAY
SI1442DH-T1-GE3 SMD N channel transistors
SI1442DH-T1-GE3 SMD N channel transistors
auf Bestellung 2720 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
175+ | 0.41 EUR |
491+ | 0.15 EUR |
521+ | 0.14 EUR |
3000+ | 0.13 EUR |
SI1443EDH-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; ESD
Case: SC70; SOT323
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -30V
Pulsed drain current: -15A
Drain current: -4A
Gate charge: 28nC
On-state resistance: 54mΩ
Power dissipation: 1.8W
Gate-source voltage: ±12V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -15A; 1.8W; ESD
Case: SC70; SOT323
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -30V
Pulsed drain current: -15A
Drain current: -4A
Gate charge: 28nC
On-state resistance: 54mΩ
Power dissipation: 1.8W
Gate-source voltage: ±12V
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2970 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
160+ | 0.45 EUR |
196+ | 0.37 EUR |
228+ | 0.31 EUR |
341+ | 0.21 EUR |
360+ | 0.2 EUR |
1000+ | 0.19 EUR |
SI1902CDL-T1-GE3 |
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Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SC70-6; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.235Ω
Drain current: 0.9A
Gate charge: 2nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.9A; 0.27W; SC70-6,SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.27W
Case: SC70-6; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 0.235Ω
Drain current: 0.9A
Gate charge: 2nC
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
191+ | 0.37 EUR |
223+ | 0.32 EUR |
358+ | 0.2 EUR |
432+ | 0.17 EUR |
459+ | 0.16 EUR |
1000+ | 0.15 EUR |
Si2300DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 15A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 15A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; Idm: 15A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.6A
Pulsed drain current: 15A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2566 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
290+ | 0.25 EUR |
309+ | 0.23 EUR |
327+ | 0.22 EUR |
368+ | 0.19 EUR |
388+ | 0.18 EUR |
SI2301BDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.45W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
10+ | 7.15 EUR |
25+ | 2.86 EUR |
81+ | 0.89 EUR |
221+ | 0.33 EUR |
3000+ | 0.19 EUR |
SI2301CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -10A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -10A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4484 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
109+ | 0.66 EUR |
161+ | 0.44 EUR |
185+ | 0.39 EUR |
254+ | 0.28 EUR |
538+ | 0.13 EUR |
21000+ | 0.12 EUR |
SI2302CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2027 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
159+ | 0.45 EUR |
202+ | 0.35 EUR |
382+ | 0.19 EUR |
404+ | 0.18 EUR |
6000+ | 0.17 EUR |
SI2302DDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3399 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
195+ | 0.37 EUR |
220+ | 0.33 EUR |
275+ | 0.26 EUR |
481+ | 0.15 EUR |
511+ | 0.14 EUR |
3000+ | 0.13 EUR |
SI2303CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1750 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
132+ | 0.54 EUR |
175+ | 0.41 EUR |
198+ | 0.36 EUR |
428+ | 0.17 EUR |
451+ | 0.16 EUR |
9000+ | 0.15 EUR |
SI2304DDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 2.1nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Drain current: 3.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 2.1nC
On-state resistance: 75mΩ
Power dissipation: 1.1W
Drain current: 3.3A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4406 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
216+ | 0.33 EUR |
291+ | 0.25 EUR |
329+ | 0.22 EUR |
428+ | 0.17 EUR |
455+ | 0.16 EUR |
1000+ | 0.15 EUR |
SI2305CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3.5A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1848 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
265+ | 0.27 EUR |
288+ | 0.25 EUR |
319+ | 0.22 EUR |
410+ | 0.17 EUR |
1000+ | 0.16 EUR |
SI2306BDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.5A
Gate charge: 4.5nC
On-state resistance: 65mΩ
Power dissipation: 1.25W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.5A
Gate charge: 4.5nC
On-state resistance: 65mΩ
Power dissipation: 1.25W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2012 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
175+ | 0.41 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
SI2307CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2317 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
126+ | 0.57 EUR |
175+ | 0.41 EUR |
371+ | 0.19 EUR |
394+ | 0.18 EUR |
SI2308BDS-T1-E3 |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 192mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.8nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.06W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 192mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.8nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 261 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
99+ | 0.73 EUR |
134+ | 0.54 EUR |
261+ | 0.27 EUR |
6000+ | 0.21 EUR |
SI2308CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5176 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
162+ | 0.44 EUR |
240+ | 0.3 EUR |
288+ | 0.25 EUR |
376+ | 0.19 EUR |
455+ | 0.16 EUR |
481+ | 0.15 EUR |
SI2309CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.3A; Idm: -8A; 1.7W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.3A
Pulsed drain current: -8A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.3A; Idm: -8A; 1.7W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.3A
Pulsed drain current: -8A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 4.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9380 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
129+ | 0.55 EUR |
170+ | 0.42 EUR |
336+ | 0.21 EUR |
358+ | 0.2 EUR |
3000+ | 0.19 EUR |
SI2312CDS-T1-GE3 |
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Hersteller: VISHAY
SI2312CDS-T1-GE3 SMD N channel transistors
SI2312CDS-T1-GE3 SMD N channel transistors
auf Bestellung 333 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
105+ | 0.68 EUR |
333+ | 0.21 EUR |
3000+ | 0.18 EUR |
SI2315BDS-T1-E3 |
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Hersteller: VISHAY
SI2315BDS-T1-E3 SMD P channel transistors
SI2315BDS-T1-E3 SMD P channel transistors
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.11 EUR |
52+ | 1.37 EUR |
142+ | 0.5 EUR |
3000+ | 0.3 EUR |
SI2315BDS-T1-GE3 |
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Hersteller: VISHAY
SI2315BDS-T1-GE3 SMD P channel transistors
SI2315BDS-T1-GE3 SMD P channel transistors
auf Bestellung 2260 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
257+ | 0.28 EUR |
271+ | 0.26 EUR |
SI2318CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 4.5A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 4.5A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3141 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
194+ | 0.37 EUR |
226+ | 0.32 EUR |
382+ | 0.19 EUR |
404+ | 0.18 EUR |
500+ | 0.17 EUR |
SI2318DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; Idm: 16A; 0.75W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; Idm: 16A; 0.75W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1397 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
171+ | 0.42 EUR |
190+ | 0.38 EUR |
243+ | 0.29 EUR |
257+ | 0.28 EUR |
SI2319CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.5A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4072 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
115+ | 0.62 EUR |
213+ | 0.34 EUR |
225+ | 0.32 EUR |
500+ | 0.31 EUR |
SI2319DDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.6A
Pulsed drain current: -15A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.6A
Pulsed drain current: -15A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
136+ | 0.53 EUR |
181+ | 0.4 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
3000+ | 0.23 EUR |
SI2319DS-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2663 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.26 EUR |
98+ | 0.74 EUR |
108+ | 0.66 EUR |
141+ | 0.51 EUR |
150+ | 0.48 EUR |
SI2319DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -2.4A
Pulsed drain current: -12A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1928 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
96+ | 0.75 EUR |
123+ | 0.58 EUR |
161+ | 0.45 EUR |
170+ | 0.42 EUR |
3000+ | 0.41 EUR |
SI2323CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; Idm: -20A; 2.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; Idm: -20A; 2.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1685 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
141+ | 0.51 EUR |
329+ | 0.22 EUR |
348+ | 0.21 EUR |
SI2323DDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2439 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
90+ | 0.8 EUR |
120+ | 0.6 EUR |
162+ | 0.44 EUR |
218+ | 0.33 EUR |
231+ | 0.31 EUR |
500+ | 0.3 EUR |
SI2323DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 63 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.16 EUR |
63+ | 1.13 EUR |
100+ | 0.72 EUR |
250+ | 0.44 EUR |
SI2324DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 234mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.9nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 234mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.9nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11378 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
174+ | 0.41 EUR |
182+ | 0.39 EUR |
206+ | 0.35 EUR |
222+ | 0.32 EUR |
234+ | 0.31 EUR |
500+ | 0.29 EUR |
SI2328DS-T1-GE3 |
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Hersteller: VISHAY
SI2328DS-T1-GE3 SMD N channel transistors
SI2328DS-T1-GE3 SMD N channel transistors
auf Bestellung 2764 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
72+ | 1 EUR |
243+ | 0.29 EUR |
257+ | 0.28 EUR |
SI2329DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -6A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±5V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 11.8nC
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -6A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±5V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 11.8nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2535 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
121+ | 0.59 EUR |
182+ | 0.39 EUR |
193+ | 0.37 EUR |
500+ | 0.36 EUR |
SI2333CDS-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.7A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.7A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -5.7A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.7A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1385 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
107+ | 0.67 EUR |
180+ | 0.4 EUR |
190+ | 0.38 EUR |
1000+ | 0.37 EUR |
3000+ | 0.36 EUR |
SI2333CDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 2.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.7A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.7A; Idm: -20A; 2.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.7A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3120 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
79+ | 0.92 EUR |
108+ | 0.66 EUR |
332+ | 0.22 EUR |
350+ | 0.2 EUR |
SI2333DDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5.2A; Idm: -20A; 1.1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.2A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 890 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.7 EUR |
125+ | 0.57 EUR |
142+ | 0.5 EUR |
304+ | 0.24 EUR |
321+ | 0.22 EUR |
1000+ | 0.21 EUR |
SI2336DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.1A
Gate charge: 5.7nC
On-state resistance: 52mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.1A
Gate charge: 5.7nC
On-state resistance: 52mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 883 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
188+ | 0.38 EUR |
239+ | 0.3 EUR |
468+ | 0.15 EUR |
496+ | 0.14 EUR |
SI2337DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.75A; Idm: -7A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -1.75A
Pulsed drain current: -7A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.75A; Idm: -7A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -1.75A
Pulsed drain current: -7A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1961 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
50+ | 1.43 EUR |
73+ | 0.99 EUR |
131+ | 0.55 EUR |
138+ | 0.52 EUR |
3000+ | 0.51 EUR |
SI2338DS-T1-GE3 |
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Hersteller: VISHAY
SI2338DS-T1-GE3 SMD N channel transistors
SI2338DS-T1-GE3 SMD N channel transistors
auf Bestellung 3144 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
102+ | 0.71 EUR |
283+ | 0.25 EUR |
300+ | 0.24 EUR |
SI2342DS-T1-GE3 |
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Hersteller: VISHAY
SI2342DS-T1-GE3 SMD N channel transistors
SI2342DS-T1-GE3 SMD N channel transistors
auf Bestellung 1178 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
110+ | 0.65 EUR |
285+ | 0.25 EUR |
300+ | 0.24 EUR |
3000+ | 0.23 EUR |
SI2343CDS-T1-GE3 |
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Hersteller: VISHAY
SI2343CDS-T1-GE3 SMD P channel transistors
SI2343CDS-T1-GE3 SMD P channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
92+ | 0.78 EUR |
288+ | 0.25 EUR |
305+ | 0.23 EUR |
SI2347DS-T1-GE3 |
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Hersteller: VISHAY
SI2347DS-T1-GE3 SMD P channel transistors
SI2347DS-T1-GE3 SMD P channel transistors
auf Bestellung 2742 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
153+ | 0.47 EUR |
455+ | 0.16 EUR |
481+ | 0.15 EUR |
SI2356DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 4.3A
Gate charge: 13nC
On-state resistance: 70mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: TrenchFET®
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 4.3A
Gate charge: 13nC
On-state resistance: 70mΩ
Power dissipation: 1.7W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: TrenchFET®
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1734 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
217+ | 0.33 EUR |
298+ | 0.24 EUR |
338+ | 0.21 EUR |
481+ | 0.15 EUR |
511+ | 0.14 EUR |
SI2365EDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 36nC
On-state resistance: 32mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -4.5A
Gate charge: 36nC
On-state resistance: 32mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Pulsed drain current: -20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 870 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
283+ | 0.25 EUR |
407+ | 0.18 EUR |
477+ | 0.15 EUR |
633+ | 0.11 EUR |
1000+ | 0.1 EUR |
SI2366DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 5.8A
Gate charge: 10nC
On-state resistance: 36mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 5.8A
Gate charge: 10nC
On-state resistance: 36mΩ
Power dissipation: 1.3W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Pulsed drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
153+ | 0.47 EUR |
205+ | 0.35 EUR |
368+ | 0.19 EUR |
388+ | 0.18 EUR |
SI2369DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -7.6A
Gate charge: 36nC
On-state resistance: 29mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -7.6A
Gate charge: 36nC
On-state resistance: 29mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Pulsed drain current: -80A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1341 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
164+ | 0.44 EUR |
219+ | 0.33 EUR |
291+ | 0.25 EUR |
307+ | 0.23 EUR |
500+ | 0.22 EUR |
SI2374DS-T1-GE3 |
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Hersteller: VISHAY
SI2374DS-T1-GE3 SMD N channel transistors
SI2374DS-T1-GE3 SMD N channel transistors
auf Bestellung 2545 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
176+ | 0.41 EUR |
404+ | 0.18 EUR |
428+ | 0.17 EUR |
1000+ | 0.16 EUR |
SI2377EDS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23; ESD
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 7.6nC
On-state resistance: 61mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.1W; SOT23; ESD
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Gate charge: 7.6nC
On-state resistance: 61mΩ
Power dissipation: 1.1W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1850 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
115+ | 0.63 EUR |
131+ | 0.55 EUR |
291+ | 0.25 EUR |
309+ | 0.23 EUR |
1000+ | 0.22 EUR |
SI2392ADS-T1-GE3 |
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Hersteller: VISHAY
SI2392ADS-T1-GE3 SMD N channel transistors
SI2392ADS-T1-GE3 SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
92+ | 0.78 EUR |
277+ | 0.26 EUR |
293+ | 0.24 EUR |
SI2393DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -30V
Drain current: -7.5A
Gate charge: 25.2nC
On-state resistance: 33mΩ
Power dissipation: 2.5W
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -50A
Drain-source voltage: -30V
Drain current: -7.5A
Gate charge: 25.2nC
On-state resistance: 33mΩ
Power dissipation: 2.5W
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3244 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
160+ | 0.45 EUR |
219+ | 0.33 EUR |
341+ | 0.21 EUR |
360+ | 0.2 EUR |
1000+ | 0.19 EUR |
Si3407DV-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -25A; 4.2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -25A; 4.2W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -25A
Power dissipation: 4.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 32.7mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2631 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
202+ | 0.35 EUR |
221+ | 0.32 EUR |
235+ | 0.3 EUR |
SI3421DV-T1-GE3 |
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Hersteller: VISHAY
SI3421DV-T1-GE3 SMD P channel transistors
SI3421DV-T1-GE3 SMD P channel transistors
auf Bestellung 2807 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
96+ | 0.75 EUR |
257+ | 0.28 EUR |
271+ | 0.26 EUR |
SI3443BDV-T1-E3 | ![]() |
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Hersteller: VISHAY
SI3443BDV-T1-E3 SMD P channel transistors
SI3443BDV-T1-E3 SMD P channel transistors
auf Bestellung 1349 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
177+ | 0.4 EUR |
280+ | 0.26 EUR |
296+ | 0.24 EUR |
SI3457CDV-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Case: TSOP6
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -4.1A
Gate charge: 15nC
On-state resistance: 113mΩ
Power dissipation: 3W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -4.1A; Idm: -20A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: TrenchFET®
Case: TSOP6
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -20A
Drain current: -4.1A
Gate charge: 15nC
On-state resistance: 113mΩ
Power dissipation: 3W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1062 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
82+ | 0.87 EUR |
125+ | 0.57 EUR |
158+ | 0.45 EUR |
319+ | 0.22 EUR |
338+ | 0.21 EUR |
3000+ | 0.2 EUR |
SI3458BDV-T1-GE3 |
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Hersteller: VISHAY
SI3458BDV-T1-GE3 SMD N channel transistors
SI3458BDV-T1-GE3 SMD N channel transistors
auf Bestellung 1439 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
62+ | 1.16 EUR |
169+ | 0.42 EUR |
178+ | 0.4 EUR |
6000+ | 0.39 EUR |
SI3459BDV-T1-GE3 |
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Hersteller: VISHAY
SI3459BDV-T1-GE3 SMD P channel transistors
SI3459BDV-T1-GE3 SMD P channel transistors
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.78 EUR |
228+ | 0.31 EUR |
241+ | 0.3 EUR |
9000+ | 0.29 EUR |
SI3460DDV-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 390 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
214+ | 0.33 EUR |
258+ | 0.28 EUR |
295+ | 0.24 EUR |
329+ | 0.22 EUR |
390+ | 0.19 EUR |
SI3473CDV-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: TrenchFET®
Case: TSOP6
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -12V
Drain current: -8A
Gate charge: 65nC
On-state resistance: 36mΩ
Power dissipation: 4.2W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: TrenchFET®
Case: TSOP6
Polarisation: unipolar
Pulsed drain current: -20A
Drain-source voltage: -12V
Drain current: -8A
Gate charge: 65nC
On-state resistance: 36mΩ
Power dissipation: 4.2W
Gate-source voltage: ±8V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2940 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
93+ | 0.78 EUR |
211+ | 0.34 EUR |
223+ | 0.32 EUR |
3000+ | 0.31 EUR |