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MAL213639101E3 MAL213639101E3 VISHAY 136RVI.PDF Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm
Mounting: THT
Type of capacitor: electrolytic
Operating temperature: -55...105°C
Capacitance: 100µF
Terminal pitch: 5mm
Manufacturer series: MAL2136
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Tolerance: ±20%
Operating voltage: 100V DC
Service life: 7000h
auf Bestellung 384 Stücke:
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26+2.82 EUR
38+1.9 EUR
50+1.59 EUR
100+1.44 EUR
200+1.32 EUR
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IRF530STRLPBF VISHAY sihf530s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF740ALPBF IRF740ALPBF VISHAY tf-irf740alpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 963 Stücke:
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24+3.07 EUR
38+1.9 EUR
50+1.54 EUR
100+1.46 EUR
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IRF740ASTRLPBF IRF740ASTRLPBF VISHAY sihf740a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF740PBF-BE3 IRF740PBF-BE3 VISHAY 91054.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
42+1.72 EUR
47+1.53 EUR
51+1.42 EUR
100+1.27 EUR
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IRF740STRRPBF VISHAY sihf740s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ44RPBF VISHAY irfz44r.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ44SPBF VISHAY sihfz44s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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IRFZ44STRLPBF VISHAY sihfz44s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ24PBF IRFZ24PBF VISHAY irfz24.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 461 Stücke:
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33+2.2 EUR
72+1.01 EUR
84+0.86 EUR
100+0.81 EUR
250+0.75 EUR
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IRFZ40PBF VISHAY irfz40.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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IRFZ48PBF VISHAY irfz48.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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IRFZ48RSPBF VISHAY sihfz48rs.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRFZ48SPBF VISHAY sihfz48s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ48STRLPBF VISHAY sihfz48s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BFC238330104 VISHAY mmkp383.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Climate class: 55/110/56
Type of capacitor: polypropylene
Capacitance: 0.1µF
Leads: 2pin
Terminal pitch: 22.5mm
Body dimensions: 26x19.5x10mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
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BFC238330153 BFC238330153 VISHAY mmkp383.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Mounting: THT
Lead length: 3.5mm
Climate class: 55/110/56
Type of capacitor: polypropylene
Capacitance: 15nF
Leads: 2pin
Terminal pitch: 15mm
Body dimensions: 17.5x11x5mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.21 EUR
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IRL540SPBF VISHAY sihl540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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IRL540STRLPBF VISHAY sihl540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TS53YJ103MR10 TS53YJ103MR10 VISHAY ts53yj.pdf Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
IP rating: IP67
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
31+2.3 EUR
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1.5KE82CA-E3/54 1.5KE82CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 364 Stücke:
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162+0.44 EUR
182+0.39 EUR
208+0.34 EUR
250+0.32 EUR
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GRC00DD1021CTNL GRC00DD1021CTNL VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
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IRFP21N60LPBF VISHAY doc?98237 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
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IRF540STRLPBF VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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IRF540STRRPBF VISHAY sihf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
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GSC00AF2211VARL GSC00AF2211VARL VISHAY GSC.pdf Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
auf Bestellung 100 Stücke:
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100+0.72 EUR
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BZX55C3V0-TAP BZX55C3V0-TAP VISHAY BZX55C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 13740 Stücke:
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715+0.1 EUR
1021+0.07 EUR
1220+0.059 EUR
1819+0.039 EUR
2539+0.028 EUR
5000+0.026 EUR
10000+0.025 EUR
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IRF510STRRPBF VISHAY sihf510s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF830ALPBF IRF830ALPBF VISHAY sihf830a.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 934 Stücke:
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28+2.57 EUR
32+2.27 EUR
42+1.72 EUR
60+1.2 EUR
100+1.13 EUR
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IRF830ASPBF VISHAY sihf830a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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IRF830ASTRLPBF VISHAY sihf830a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF830BPBF VISHAY irf830b.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
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IRF840ASTRRPBF VISHAY sihf840.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRF840LCLPBF VISHAY sihf840l.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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IRF840LCSPBF VISHAY sihf840l.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840STRRPBF VISHAY sihf840s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRF9530STRLPBF VISHAY sihf9530.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRF9530STRRPBF VISHAY sihf9530.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRFB13N50APBF VISHAY tf-irfb13n50apbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF640PBF-BE3 IRF640PBF-BE3 VISHAY sihf640.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.72 EUR
51+1.42 EUR
55+1.32 EUR
58+1.24 EUR
100+1.19 EUR
Mindestbestellmenge: 27 Stücke
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IRF640STRRPBF VISHAY sihf640s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SI7852DP-T1-E3 VISHAY si7852dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
On-state resistance: 16.5mΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PE30L0FL472KAB PE30L0FL472KAB VISHAY pe30.pdf Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Tolerance: ±10%
Power: 3W
Mounting: on panel
Operating voltage: 300V
Temperature coefficient: 150ppm/°C
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Potentiometer features: for industrial use; for military use
IP rating: IP67
Shaft surface: smooth
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
2+40.71 EUR
5+35.12 EUR
10+33.43 EUR
20+32.22 EUR
30+31.49 EUR
Mindestbestellmenge: 2 Stücke
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SI2301CDS-T1-E3 VISHAY si2301cd.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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MRS25000C2324FCT00 MRS25000C2324FCT00 VISHAY MRS25.pdf Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; 350V; Ø0.6x28mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
Resistance: 2.32MΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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IRF9540STRRPBF VISHAY Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRFR9024TRLPBF VISHAY sihfr902.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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IRF9640LPBF VISHAY IRF%28SiHF%299640%28S%2CL%29.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CNY17-3X009T CNY17-3X009T VISHAY cny17.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
CTR@If: 40-80%@10mA
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
124+0.58 EUR
157+0.46 EUR
175+0.41 EUR
Mindestbestellmenge: 88 Stücke
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BFC233620473 BFC233620473 VISHAY mkp3362x2.pdf Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Type of capacitor: polypropylene
Mounting: THT
Kind of capacitor: X2
Capacitance: 47nF
Terminal pitch: 15mm
Lead length: 3.5mm
Body dimensions: 5x11x17.5mm
Tolerance: ±20%
Operating voltage: 310V AC; 630V DC
Leads: 2pin
Climate class: 55/105/56
auf Bestellung 3597 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
241+0.3 EUR
336+0.21 EUR
379+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
2000+0.15 EUR
Mindestbestellmenge: 120 Stücke
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TDCG1060M TDCG1060M VISHAY TDCG1050M.pdf Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Common electrode: cathode
Colour: green
Type of display: LED
Wavelength: 562...575nm
Luminosity: 2.8...4mcd
Digit height: 10mm; 0.39"
Operating current: 20mA
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Kind of display: 7-segment
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
30+2.42 EUR
48+1.99 EUR
Mindestbestellmenge: 23 Stücke
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T18105KT10 T18105KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Potentiometer standard: 19mm
Number of electrical turns: 15 ±1
Engineering PN: 43P; 89; 3006
Track material: cermet
Min. insulation resistance: 1TΩ
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.5 EUR
35+2.1 EUR
38+1.9 EUR
50+1.79 EUR
100+1.67 EUR
Mindestbestellmenge: 29 Stücke
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SI2301BDS-T1-E3 VISHAY si2301bds.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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GRC00KK1022A00L GRC00KK1022A00L VISHAY GRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 18x40mm
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.04 EUR
47+1.54 EUR
58+1.24 EUR
100+1.12 EUR
Mindestbestellmenge: 35 Stücke
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VJ0603A101JXBAC VJ0603A101JXBAC VISHAY vjcommercialseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 1181 Stücke:
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228+0.31 EUR
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VJ0805A101JXEAC VJ0805A101JXEAC VISHAY vjcommercialseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 500V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 1710 Stücke:
Lieferzeit 14-21 Tag (e)
353+0.2 EUR
966+0.074 EUR
1185+0.06 EUR
1337+0.053 EUR
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VJ0603Y101KXACW1BC VJ0603Y101KXACW1BC VISHAY vjw1bcbascomseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Kind of capacitor: MLCC
auf Bestellung 41544 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.072 EUR
3125+0.023 EUR
4033+0.018 EUR
4588+0.016 EUR
6850+0.01 EUR
8696+0.0082 EUR
11656+0.0061 EUR
15975+0.0045 EUR
21009+0.0034 EUR
Mindestbestellmenge: 1000 Stücke
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CRCW08050000Z0TABC CRCW08050000Z0TABC VISHAY Data Sheet CRCW_BCe3.pdf Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 0Ω; 0.125W; 150V; -55÷155°C
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 0Ω
Power: 0.125W
Operating voltage: 150V
auf Bestellung 145899 Stücke:
Lieferzeit 14-21 Tag (e)
11821+0.006 EUR
17065+0.0042 EUR
22832+0.0031 EUR
25381+0.0028 EUR
26738+0.0027 EUR
28249+0.0025 EUR
50000+0.0022 EUR
75000+0.0021 EUR
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SIHP15N50E-BE3 VISHAY sihp15n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14.5A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VJ1206A103JXATW1BC VJ1206A103JXATW1BC VISHAY vjw1bcbascomseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 10nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 3220 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.5 EUR
439+0.16 EUR
758+0.094 EUR
964+0.074 EUR
1161+0.062 EUR
1238+0.058 EUR
3000+0.055 EUR
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MAL213639101E3 136RVI.PDF
MAL213639101E3
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm
Mounting: THT
Type of capacitor: electrolytic
Operating temperature: -55...105°C
Capacitance: 100µF
Terminal pitch: 5mm
Manufacturer series: MAL2136
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Tolerance: ±20%
Operating voltage: 100V DC
Service life: 7000h
auf Bestellung 384 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
26+2.82 EUR
38+1.9 EUR
50+1.59 EUR
100+1.44 EUR
200+1.32 EUR
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IRF530STRLPBF sihf530s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF740ALPBF tf-irf740alpbf.pdf
IRF740ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
24+3.07 EUR
38+1.9 EUR
50+1.54 EUR
100+1.46 EUR
Mindestbestellmenge: 24 Stücke
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IRF740ASTRLPBF sihf740a.pdf
IRF740ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF740PBF-BE3 91054.pdf
IRF740PBF-BE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
30+2.4 EUR
42+1.72 EUR
47+1.53 EUR
51+1.42 EUR
100+1.27 EUR
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IRF740STRRPBF sihf740s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ44RPBF irfz44r.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFZ44SPBF sihfz44s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44STRLPBF sihfz44s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRFZ24PBF description irfz24.pdf
IRFZ24PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
33+2.2 EUR
72+1.01 EUR
84+0.86 EUR
100+0.81 EUR
250+0.75 EUR
Mindestbestellmenge: 33 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ40PBF irfz40.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48PBF irfz48.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48RSPBF sihfz48rs.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48SPBF sihfz48s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ48STRLPBF sihfz48s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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BFC238330104 mmkp383.pdf
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Climate class: 55/110/56
Type of capacitor: polypropylene
Capacitance: 0.1µF
Leads: 2pin
Terminal pitch: 22.5mm
Body dimensions: 26x19.5x10mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
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BFC238330153 mmkp383.pdf
BFC238330153
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Mounting: THT
Lead length: 3.5mm
Climate class: 55/110/56
Type of capacitor: polypropylene
Capacitance: 15nF
Leads: 2pin
Terminal pitch: 15mm
Body dimensions: 17.5x11x5mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
7+10.21 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL540SPBF sihl540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL540STRLPBF sihl540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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TS53YJ103MR10 ts53yj.pdf
TS53YJ103MR10
Hersteller: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Torque: 1.5Ncm
Temperature coefficient: 100ppm/°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Leads: YJ
Track material: cermet
Kind of potentiometer: single turn
IP rating: IP67
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
28+2.56 EUR
31+2.3 EUR
Mindestbestellmenge: 28 Stücke
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1.5KE82CA-E3/54 15ke_Ser.pdf
1.5KE82CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 364 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
162+0.44 EUR
182+0.39 EUR
208+0.34 EUR
250+0.32 EUR
Mindestbestellmenge: 162 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GRC00DD1021CTNL GRC.pdf
GRC00DD1021CTNL
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFP21N60LPBF doc?98237
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF540STRLPBF sihf540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF540STRRPBF sihf540s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GSC00AF2211VARL GSC.pdf
GSC00AF2211VARL
Hersteller: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
100+0.72 EUR
Mindestbestellmenge: 100 Stücke
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BZX55C3V0-TAP BZX55C10-TAP.pdf
BZX55C3V0-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 13740 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
715+0.1 EUR
1021+0.07 EUR
1220+0.059 EUR
1819+0.039 EUR
2539+0.028 EUR
5000+0.026 EUR
10000+0.025 EUR
Mindestbestellmenge: 715 Stücke
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IRF510STRRPBF sihf510s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ALPBF sihf830a.pdf
IRF830ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 934 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
28+2.57 EUR
32+2.27 EUR
42+1.72 EUR
60+1.2 EUR
100+1.13 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF830ASPBF sihf830a.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF830ASTRLPBF sihf830a.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF830BPBF irf830b.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840ASTRRPBF sihf840.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF840LCLPBF description sihf840l.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840LCSPBF sihf840l.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF840STRRPBF sihf840s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF9530STRLPBF sihf9530.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF9530STRRPBF sihf9530.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFB13N50APBF tf-irfb13n50apbf.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF640PBF-BE3 sihf640.pdf
IRF640PBF-BE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
27+2.72 EUR
51+1.42 EUR
55+1.32 EUR
58+1.24 EUR
100+1.19 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF640STRRPBF sihf640s.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SI7852DP-T1-E3 si7852dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 41nC
Type of transistor: N-MOSFET
Power dissipation: 1.2W
Drain current: 7.6A
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 80V
On-state resistance: 16.5mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE30L0FL472KAB pe30.pdf
PE30L0FL472KAB
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±10%; 6mm; linear
Resistance: 4.7kΩ
Tolerance: ±10%
Power: 3W
Mounting: on panel
Operating voltage: 300V
Temperature coefficient: 150ppm/°C
Operating temperature: -55...125°C
Shaft diameter: 6mm
Thread length: 12mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Potentiometer features: for industrial use; for military use
IP rating: IP67
Shaft surface: smooth
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
2+40.71 EUR
5+35.12 EUR
10+33.43 EUR
20+32.22 EUR
30+31.49 EUR
Mindestbestellmenge: 2 Stücke
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SI2301CDS-T1-E3 si2301cd.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.8A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -10A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 142mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MRS25000C2324FCT00 MRS25.pdf
MRS25000C2324FCT00
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 2.32MΩ; 600mW; ±1%; 350V; Ø0.6x28mm
Mounting: THT
Type of resistor: thin film
Leads dimensions: Ø0.6x28mm
Diameter: 2.5mm
Body dimensions: Ø2.5x6.5mm
Length: 6.5mm
Power: 0.6W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Operating voltage: 350V
Resistance: 2.32MΩ
Produkt ist nicht verfügbar
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IRF9540STRRPBF
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -72A; 150W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Pulsed drain current: -72A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 61nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRFR9024TRLPBF sihfr902.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.6A
Pulsed drain current: -35A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IRF9640LPBF IRF%28SiHF%299640%28S%2CL%29.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -6.8A; Idm: -44A; 125W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -6.8A
Pulsed drain current: -44A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CNY17-3X009T cny17.pdf
CNY17-3X009T
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 4.3µs
Manufacturer series: CNY17
CTR@If: 40-80%@10mA
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
88+0.82 EUR
124+0.58 EUR
157+0.46 EUR
175+0.41 EUR
Mindestbestellmenge: 88 Stücke
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BFC233620473 mkp3362x2.pdf
BFC233620473
Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 47nF; 630VDC; 310VAC; 5x11x17.5mm
Type of capacitor: polypropylene
Mounting: THT
Kind of capacitor: X2
Capacitance: 47nF
Terminal pitch: 15mm
Lead length: 3.5mm
Body dimensions: 5x11x17.5mm
Tolerance: ±20%
Operating voltage: 310V AC; 630V DC
Leads: 2pin
Climate class: 55/105/56
auf Bestellung 3597 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
120+0.6 EUR
241+0.3 EUR
336+0.21 EUR
379+0.19 EUR
500+0.17 EUR
1000+0.16 EUR
2000+0.15 EUR
Mindestbestellmenge: 120 Stücke
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TDCG1060M TDCG1050M.pdf
TDCG1060M
Hersteller: VISHAY
Category: 7-segment LED displays
Description: Display: LED; 7-segment; 10mm; 0.39"; No.char: 4; green; 2.8÷4mcd
Operating voltage: 2...2.4V
Mounting: THT
Common electrode: cathode
Colour: green
Type of display: LED
Wavelength: 562...575nm
Luminosity: 2.8...4mcd
Digit height: 10mm; 0.39"
Operating current: 20mA
Dimensions: 40.2x12.8x7mm
Number of characters: 4
Kind of display: 7-segment
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
23+3.25 EUR
30+2.42 EUR
48+1.99 EUR
Mindestbestellmenge: 23 Stücke
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T18105KT10 t18.pdf
T18105KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Kind of potentiometer: multiturn
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: THT
Operating temperature: -55...125°C
Potentiometer standard: 19mm
Number of electrical turns: 15 ±1
Engineering PN: 43P; 89; 3006
Track material: cermet
Min. insulation resistance: 1TΩ
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
29+2.5 EUR
35+2.1 EUR
38+1.9 EUR
50+1.79 EUR
100+1.67 EUR
Mindestbestellmenge: 29 Stücke
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SI2301BDS-T1-E3 si2301bds.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.2A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.2A
Pulsed drain current: -10A
Power dissipation: 0.9W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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GRC00KK1022A00L GRC.pdf
GRC00KK1022A00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 100VDC; ±20%; 2000h; 18x40mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 100V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 18x40mm
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
35+2.04 EUR
47+1.54 EUR
58+1.24 EUR
100+1.12 EUR
Mindestbestellmenge: 35 Stücke
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VJ0603A101JXBAC vjcommercialseries.pdf
VJ0603A101JXBAC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
auf Bestellung 1181 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
228+0.31 EUR
Mindestbestellmenge: 228 Stücke
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VJ0805A101JXEAC vjcommercialseries.pdf
VJ0805A101JXEAC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100pF; 500V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 500V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
auf Bestellung 1710 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
353+0.2 EUR
966+0.074 EUR
1185+0.06 EUR
1337+0.053 EUR
Mindestbestellmenge: 353 Stücke
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VJ0603Y101KXACW1BC vjw1bcbascomseries.pdf
VJ0603Y101KXACW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 100pF; 50V; X7R; ±10%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 0.1nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Kind of capacitor: MLCC
auf Bestellung 41544 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1000+0.072 EUR
3125+0.023 EUR
4033+0.018 EUR
4588+0.016 EUR
6850+0.01 EUR
8696+0.0082 EUR
11656+0.0061 EUR
15975+0.0045 EUR
21009+0.0034 EUR
Mindestbestellmenge: 1000 Stücke
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CRCW08050000Z0TABC Data Sheet CRCW_BCe3.pdf
CRCW08050000Z0TABC
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 0Ω; 0.125W; 150V; -55÷155°C
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Type of resistor: thick film
Operating temperature: -55...155°C
Resistance: 0Ω
Power: 0.125W
Operating voltage: 150V
auf Bestellung 145899 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
11821+0.006 EUR
17065+0.0042 EUR
22832+0.0031 EUR
25381+0.0028 EUR
26738+0.0027 EUR
28249+0.0025 EUR
50000+0.0022 EUR
75000+0.0021 EUR
Mindestbestellmenge: 11821 Stücke
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SIHP15N50E-BE3 sihp15n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14.5A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14.5A
Pulsed drain current: 28A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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VJ1206A103JXATW1BC vjw1bcbascomseries.pdf
VJ1206A103JXATW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10nF; 50V; C0G (NP0); ±5%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 10nF
Tolerance: ±5%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 3220 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
143+0.5 EUR
439+0.16 EUR
758+0.094 EUR
964+0.074 EUR
1161+0.062 EUR
1238+0.058 EUR
3000+0.055 EUR
Mindestbestellmenge: 143 Stücke
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