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ZRC00JG1021H00L ZRC00JG1021H00L VISHAY ZRC.pdf Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Produkt ist nicht verfügbar
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SI7852DP-T1-GE3 VISHAY si7852dp.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Technology: TrenchFET®
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 16.5mΩ
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 41nC
Polarisation: unipolar
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SS26-E3/52T SS26-E3/52T VISHAY SS24-E3-52T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Manufacturer standard package: 750pcs.
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
auf Bestellung 6606 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.6 EUR
201+0.43 EUR
315+0.27 EUR
368+0.23 EUR
414+0.2 EUR
500+0.18 EUR
1500+0.17 EUR
Mindestbestellmenge: 143 Stücke
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SS26HE3_A/H SS26HE3_A/H VISHAY ss22.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Manufacturer standard package: 750pcs.
Max. forward voltage: 0.7V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
auf Bestellung 584 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.63 EUR
178+0.48 EUR
205+0.42 EUR
252+0.33 EUR
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SS26S-E3/5AT SS26S-E3/5AT VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7500 Stücke
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SS26S-E3/61T SS26S-E3/61T VISHAY ss26s.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.46 EUR
252+0.33 EUR
302+0.29 EUR
345+0.25 EUR
376+0.23 EUR
Mindestbestellmenge: 186 Stücke
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SISS26DN-T1-GE3 VISHAY siss26dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Pulsed drain current: 150A
Power dissipation: 36W
Gate charge: 37nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® 1212-8
On-state resistance: 7.8mΩ
Produkt ist nicht verfügbar
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SISS26LDN-T1-GE3 VISHAY siss26ldn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Pulsed drain current: 150A
Power dissipation: 36W
Gate charge: 48nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® 1212-8
On-state resistance: 6.2mΩ
Produkt ist nicht verfügbar
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TSSS2600 TSSS2600 VISHAY TSSS2600.pdf Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
auf Bestellung 4305 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.73 EUR
161+0.52 EUR
179+0.48 EUR
193+0.44 EUR
205+0.42 EUR
500+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 117 Stücke
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IRF840ALPBF IRF840ALPBF VISHAY IRF840AL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840APBF IRF840APBF VISHAY IRF840A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.56 EUR
39+2.19 EUR
50+1.94 EUR
100+1.81 EUR
250+1.67 EUR
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IRF840ASPBF IRF840ASPBF VISHAY IRF840ASPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.64 EUR
30+2.89 EUR
34+2.57 EUR
50+1.98 EUR
100+1.81 EUR
250+1.67 EUR
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IRF840ASTRLPBF IRF840ASTRLPBF VISHAY irf840as_IRF840al.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IRF840LCPBF IRF840LCPBF VISHAY IRF840LC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
25+3.44 EUR
31+2.82 EUR
37+2.31 EUR
50+1.94 EUR
100+1.65 EUR
250+1.39 EUR
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IRF840SPBF IRF840SPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 654 Stücke:
Lieferzeit 14-21 Tag (e)
37+2.33 EUR
57+1.51 EUR
64+1.34 EUR
100+1.31 EUR
250+1.24 EUR
500+1.19 EUR
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IRF840STRLPBF IRF840STRLPBF VISHAY IRF840SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS40-05-E3-08 BAS40-05-E3-08 VISHAY BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Reverse recovery time: 5ns
Manufacturer standard package: 3000pcs.
Power dissipation: 0.2W
Features of semiconductor devices: small signal
auf Bestellung 1011 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.23 EUR
562+0.15 EUR
985+0.087 EUR
1011+0.083 EUR
Mindestbestellmenge: 385 Stücke
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1.5KE27CA-E3/54 1.5KE27CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 1169 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.46 EUR
204+0.42 EUR
500+0.37 EUR
Mindestbestellmenge: 186 Stücke
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1N5822-E3/54 1N5822-E3/54 VISHAY 1n5820-22.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Manufacturer standard package: 1400pcs.
auf Bestellung 3384 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
246+0.35 EUR
268+0.32 EUR
500+0.29 EUR
1000+0.27 EUR
Mindestbestellmenge: 200 Stücke
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BYV26C-TAP BYV26C-TAP VISHAY byv26.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
auf Bestellung 6353 Stücke:
Lieferzeit 14-21 Tag (e)
77+1.11 EUR
124+0.69 EUR
154+0.55 EUR
500+0.48 EUR
1000+0.45 EUR
2000+0.43 EUR
2500+0.42 EUR
5000+0.39 EUR
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BYV26C-TR BYV26C-TR VISHAY byv26.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: 10 inch reel
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Manufacturer standard package: 5000pcs.
Leakage current: 0.1mA
auf Bestellung 3516 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.52 EUR
173+0.49 EUR
180+0.48 EUR
191+0.45 EUR
250+0.43 EUR
500+0.42 EUR
Mindestbestellmenge: 162 Stücke
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1.5KE400A-E3/54 1.5KE400A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 880 Stücke:
Lieferzeit 14-21 Tag (e)
80+1.07 EUR
94+0.92 EUR
100+0.86 EUR
113+0.75 EUR
250+0.73 EUR
500+0.69 EUR
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IRF740APBF IRF740APBF VISHAY IRF740APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)
27+3.27 EUR
47+1.82 EUR
53+1.62 EUR
100+1.48 EUR
250+1.33 EUR
500+1.31 EUR
Mindestbestellmenge: 27 Stücke
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IRF740ASPBF IRF740ASPBF VISHAY IRF740A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1396 Stücke:
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23+3.81 EUR
30+2.88 EUR
35+2.43 EUR
44+1.95 EUR
50+1.74 EUR
100+1.57 EUR
250+1.46 EUR
1000+1.38 EUR
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IRF740LCPBF IRF740LCPBF VISHAY IRF740LC.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.87 EUR
35+2.5 EUR
42+2.05 EUR
50+1.81 EUR
100+1.59 EUR
250+1.43 EUR
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IRF740PBF IRF740PBF VISHAY IRF740PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2050 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.81 EUR
46+1.86 EUR
54+1.59 EUR
55+1.57 EUR
100+1.43 EUR
250+1.27 EUR
500+1.19 EUR
1000+1.09 EUR
2000+1.02 EUR
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IRF740SPBF IRF740SPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
19+4.59 EUR
27+3.18 EUR
32+2.69 EUR
50+2.37 EUR
100+2.14 EUR
150+2.02 EUR
250+1.9 EUR
Mindestbestellmenge: 19 Stücke
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IRF740STRLPBF IRF740STRLPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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1.5KE18CA-E3/54 1.5KE18CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 1456 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.24 EUR
87+0.99 EUR
105+0.81 EUR
139+0.62 EUR
163+0.52 EUR
174+0.49 EUR
Mindestbestellmenge: 69 Stücke
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1.5KE180CA-E3/54 1.5KE180CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 1812 Stücke:
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81+1.06 EUR
99+0.87 EUR
143+0.6 EUR
500+0.5 EUR
1000+0.46 EUR
1400+0.44 EUR
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1.5KE18A-E3/54 1.5KE18A-E3/54 VISHAY 15ke_Ser.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 860 Stücke:
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120+0.71 EUR
134+0.64 EUR
142+0.61 EUR
147+0.58 EUR
250+0.56 EUR
500+0.54 EUR
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P6KE200A-E3/54 P6KE200A-E3/54 VISHAY p6ke.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 200V
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Manufacturer series: P6KE
Kind of package: 13 inch reel
Leakage current: 1µA
Max. forward impulse current: 2.2A
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
Produkt ist nicht verfügbar
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1N5817-E3/54 1N5817-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 2893 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.39 EUR
248+0.35 EUR
275+0.31 EUR
391+0.21 EUR
477+0.18 EUR
544+0.15 EUR
1000+0.14 EUR
2000+0.13 EUR
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1N5817-E3/73 1N5817-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 7167 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.35 EUR
358+0.24 EUR
447+0.19 EUR
532+0.15 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.11 EUR
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1N5819-E3/54 1N5819-E3/54 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
auf Bestellung 2398 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.46 EUR
230+0.37 EUR
266+0.32 EUR
417+0.2 EUR
556+0.15 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 186 Stücke
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1N5819-E3/73 1N5819-E3/73 VISHAY 1n5817-19.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: Ammo Pack
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
auf Bestellung 1471 Stücke:
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239+0.36 EUR
323+0.26 EUR
468+0.18 EUR
589+0.14 EUR
1000+0.13 EUR
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BAV99-E3-08BAV99-E3-08
BAV99-E3-08BAV99-E3-08
 BAV99-E3-08 VISHAY bav99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Features of semiconductor devices: fast switching; small signal
auf Bestellung 4595 Stücke:
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334+0.25 EUR
625+0.13 EUR
1112+0.076 EUR
1511+0.056 EUR
1749+0.049 EUR
3000+0.04 EUR
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BAV99-HE3-08 BAV99-HE3-08 VISHAY bav99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Manufacturer standard package: 3000pcs.
Features of semiconductor devices: fast switching; small signal
auf Bestellung 10 Stücke:
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10+8.51 EUR
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1N4007GP-E3/54 1N4007GP-E3/54 VISHAY 1n4001gp.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; 13 inch reel; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Reverse recovery time: 2µs
Manufacturer standard package: 5500pcs.
auf Bestellung 5964 Stücke:
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209+0.4 EUR
249+0.35 EUR
275+0.31 EUR
327+0.26 EUR
500+0.21 EUR
1000+0.18 EUR
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357B0102MXB251S22 357B0102MXB251S22 VISHAY 357.pdf Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Shaft diameter: 6.35mm
Linearity tolerance: ±2%
L shaft length: 22mm
Thread length: 8mm
Characteristics: linear
Kind of potentiometer: single turn
Shaft length: 14mm
Potentiometer features: without limiters
Shaft surface: smooth
Fastening thread: 3/8"x32UNEF
Manufacturer series: 357
Type of potentiometer: shaft
Mechanical durability: 10000000 cycles
Track material: plastic
auf Bestellung 50 Stücke:
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2+51.69 EUR
3+45.08 EUR
10+41.09 EUR
25+38.98 EUR
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357B2102MAB251S22 357B2102MAB251S22 VISHAY 357.pdf Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Shaft diameter: 6.35mm
Linearity tolerance: ±2%
L shaft length: 22mm
Thread length: 8mm
Characteristics: linear
Kind of potentiometer: single turn
Shaft length: 14mm
Shaft surface: smooth
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Manufacturer series: 357
Type of potentiometer: shaft
Mechanical durability: 10000000 cycles
Track material: plastic
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
2+49.03 EUR
3+43.26 EUR
10+42.42 EUR
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VJ1206A100KXAAC VJ1206A100KXAAC VISHAY vjcommercialseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Operating temperature: -55...125°C
Mounting: SMD
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
510+0.17 EUR
590+0.14 EUR
710+0.12 EUR
1000+0.12 EUR
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BAS85-GS08 BAS85-GS08 VISHAY bas85.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Max. load current: 0.3A
Capacitance: 10pF
auf Bestellung 72805 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.55 EUR
250+0.35 EUR
406+0.21 EUR
566+0.15 EUR
1000+0.13 EUR
2500+0.11 EUR
5000+0.095 EUR
7500+0.087 EUR
12500+0.079 EUR
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BAS85-GS18 BAS85-GS18 VISHAY bas85.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.2W
Manufacturer standard package: 10000pcs.
Features of semiconductor devices: small signal
Kind of package: 13 inch reel
auf Bestellung 13680 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.17 EUR
770+0.11 EUR
979+0.087 EUR
1208+0.07 EUR
1330+0.064 EUR
2500+0.061 EUR
5000+0.056 EUR
10000+0.049 EUR
Mindestbestellmenge: 500 Stücke
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NTCLE100E3472JB0 NTCLE100E3472JB0 VISHAY ntcle100.pdf Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
Produkt ist nicht verfügbar
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1.5KE47CA-E3/54 1.5KE47CA-E3/54 VISHAY 15ke_Ser.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 1321 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.92 EUR
118+0.73 EUR
133+0.64 EUR
140+0.61 EUR
250+0.58 EUR
500+0.55 EUR
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SIHA25N50E-GE3 SIHA25N50E-GE3 VISHAY siha25n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB25N50E-GE3 SIHB25N50E-GE3 VISHAY sihb25n50e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHG25N50E-GE3 VISHAY sihg25n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP25N50E-GE3 SIHP25N50E-GE3 VISHAY tf-sihp25n50e-ge3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR10100-E3/4W MBR10100-E3/4W VISHAY MBR10100-E3-4W.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
auf Bestellung 929 Stücke:
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90+0.95 EUR
94+0.9 EUR
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BZX85C12-TAP BZX85C12-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 11449 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.37 EUR
511+0.17 EUR
650+0.13 EUR
893+0.095 EUR
944+0.09 EUR
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BZX85C5V1-TAP BZX85C5V1-TAP VISHAY BZX85C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; DO41; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 9259 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.44 EUR
491+0.18 EUR
556+0.15 EUR
633+0.13 EUR
803+0.11 EUR
1000+0.096 EUR
2500+0.087 EUR
5000+0.082 EUR
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IRF540PBF IRF540PBF VISHAY IRF540PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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IRF540SPBF IRF540SPBF VISHAY irf540s.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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TLLR4400 TLLR4400 VISHAY TLLx440x-DTE.pdf Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Wavelength: 612...625nm
Viewing angle: 50°
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
auf Bestellung 2966 Stücke:
Lieferzeit 14-21 Tag (e)
143+0.6 EUR
174+0.49 EUR
204+0.42 EUR
261+0.32 EUR
311+0.27 EUR
360+0.24 EUR
410+0.2 EUR
1000+0.19 EUR
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TLLR4400-AS12Z TLLR4400-AS12Z VISHAY TLLR4400-AS12Z.pdf Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Wavelength: 612...625nm
Viewing angle: 25°
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Produkt ist nicht verfügbar
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TLLR4401 TLLR4401 VISHAY TLLx440x-DTE.pdf Category: THT LEDs Round
Description: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Type of diode: LED
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Wavelength: 612...625nm
Viewing angle: 50°
Number of terminals: 2
Luminosity: 1...2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
auf Bestellung 3239 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.51 EUR
213+0.4 EUR
239+0.36 EUR
261+0.32 EUR
285+0.3 EUR
321+0.26 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 167 Stücke
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BZX55C8V2-TAP BZX55C8V2-TAP VISHAY BZX55C10-TAP.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 20919 Stücke:
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834+0.1 EUR
1352+0.063 EUR
1786+0.048 EUR
2101+0.04 EUR
2416+0.036 EUR
2618+0.032 EUR
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VJ1206G107MXYTW1BC VJ1206G107MXYTW1BC VISHAY vjw1bcbascomseries.pdf Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 100µF
Tolerance: ±20%
Mounting: SMD
Operating temperature: -55...85°C
Operating voltage: 6.3V
Dielectric: X5R
Case - inch: 1206
Case - mm: 3216
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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ZRC00JG1021H00L ZRC.pdf
ZRC00JG1021H00L
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Produkt ist nicht verfügbar
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SI7852DP-T1-GE3 si7852dp.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 7.6A; Idm: 50A
Case: PowerPAK® SO8
Mounting: SMD
Technology: TrenchFET®
Drain current: 7.6A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 16.5mΩ
Pulsed drain current: 50A
Power dissipation: 1.2W
Gate charge: 41nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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SS26-E3/52T SS24-E3-52T.pdf
SS26-E3/52T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Manufacturer standard package: 750pcs.
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
auf Bestellung 6606 Stücke:
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143+0.6 EUR
201+0.43 EUR
315+0.27 EUR
368+0.23 EUR
414+0.2 EUR
500+0.18 EUR
1500+0.17 EUR
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SS26HE3_A/H ss22.pdf
SS26HE3_A/H
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Manufacturer standard package: 750pcs.
Max. forward voltage: 0.7V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 75A
auf Bestellung 584 Stücke:
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136+0.63 EUR
178+0.48 EUR
205+0.42 EUR
252+0.33 EUR
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SS26S-E3/5AT ss26s.pdf
SS26S-E3/5AT
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Manufacturer standard package: 7500pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
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SS26S-E3/61T ss26s.pdf
SS26S-E3/61T
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Manufacturer standard package: 1800pcs.
Max. forward voltage: 0.62V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 10mA
Case: SMA
Type of diode: Schottky rectifying
Max. forward impulse current: 40A
auf Bestellung 999 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
186+0.46 EUR
252+0.33 EUR
302+0.29 EUR
345+0.25 EUR
376+0.23 EUR
Mindestbestellmenge: 186 Stücke
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SISS26DN-T1-GE3 siss26dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Mounting: SMD
Pulsed drain current: 150A
Power dissipation: 36W
Gate charge: 37nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® 1212-8
On-state resistance: 7.8mΩ
Produkt ist nicht verfügbar
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SISS26LDN-T1-GE3 siss26ldn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Mounting: SMD
Pulsed drain current: 150A
Power dissipation: 36W
Gate charge: 48nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® 1212-8
On-state resistance: 6.2mΩ
Produkt ist nicht verfügbar
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TSSS2600 TSSS2600.pdf
TSSS2600
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; 1.25÷1.6VDC; THT
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Radiant power: 2.6mW
Viewing angle: 25°
Operating voltage: 1.25...1.6V DC
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
auf Bestellung 4305 Stücke:
Lieferzeit 14-21 Tag (e)
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117+0.73 EUR
161+0.52 EUR
179+0.48 EUR
193+0.44 EUR
205+0.42 EUR
500+0.36 EUR
1000+0.35 EUR
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IRF840ALPBF IRF840AL.pdf
IRF840ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840APBF IRF840A.pdf
IRF840APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
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24+3.56 EUR
39+2.19 EUR
50+1.94 EUR
100+1.81 EUR
250+1.67 EUR
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IRF840ASPBF IRF840ASPBF.pdf
IRF840ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 485 Stücke:
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24+3.64 EUR
30+2.89 EUR
34+2.57 EUR
50+1.98 EUR
100+1.81 EUR
250+1.67 EUR
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IRF840ASTRLPBF irf840as_IRF840al.pdf
IRF840ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF840LCPBF IRF840LC.pdf
IRF840LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 498 Stücke:
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25+3.44 EUR
31+2.82 EUR
37+2.31 EUR
50+1.94 EUR
100+1.65 EUR
250+1.39 EUR
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IRF840SPBF IRF840SPBF.pdf
IRF840SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 654 Stücke:
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37+2.33 EUR
57+1.51 EUR
64+1.34 EUR
100+1.31 EUR
250+1.24 EUR
500+1.19 EUR
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IRF840STRLPBF IRF840SPBF.pdf
IRF840STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAS40-05-E3-08 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-05-E3-08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Reverse recovery time: 5ns
Manufacturer standard package: 3000pcs.
Power dissipation: 0.2W
Features of semiconductor devices: small signal
auf Bestellung 1011 Stücke:
Lieferzeit 14-21 Tag (e)
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385+0.23 EUR
562+0.15 EUR
985+0.087 EUR
1011+0.083 EUR
Mindestbestellmenge: 385 Stücke
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1.5KE27CA-E3/54 15ke_Ser.pdf
1.5KE27CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 1169 Stücke:
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186+0.46 EUR
204+0.42 EUR
500+0.37 EUR
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1N5822-E3/54 1n5820-22.pdf
1N5822-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; Ufmax: 0.525V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.525V
Max. forward impulse current: 80A
Kind of package: 13 inch reel
Manufacturer standard package: 1400pcs.
auf Bestellung 3384 Stücke:
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200+0.43 EUR
246+0.35 EUR
268+0.32 EUR
500+0.29 EUR
1000+0.27 EUR
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BYV26C-TAP byv26.pdf
BYV26C-TAP
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; Ammo Pack; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: Ammo Pack
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Leakage current: 0.1mA
auf Bestellung 6353 Stücke:
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77+1.11 EUR
124+0.69 EUR
154+0.55 EUR
500+0.48 EUR
1000+0.45 EUR
2000+0.43 EUR
2500+0.42 EUR
5000+0.39 EUR
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BYV26C-TR description byv26.pdf
BYV26C-TR
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; SOD57; 10 inch reel
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Max. forward impulse current: 30A
Case: SOD57
Kind of package: 10 inch reel
Max. forward voltage: 1.3V
Reverse recovery time: 30ns
Manufacturer standard package: 5000pcs.
Leakage current: 0.1mA
auf Bestellung 3516 Stücke:
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162+0.52 EUR
173+0.49 EUR
180+0.48 EUR
191+0.45 EUR
250+0.43 EUR
500+0.42 EUR
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1.5KE400A-E3/54 15ke_Ser.pdf
1.5KE400A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
auf Bestellung 880 Stücke:
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AnzahlPrivatkunde
80+1.07 EUR
94+0.92 EUR
100+0.86 EUR
113+0.75 EUR
250+0.73 EUR
500+0.69 EUR
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IRF740APBF IRF740APBF.pdf
IRF740APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 505 Stücke:
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27+3.27 EUR
47+1.82 EUR
53+1.62 EUR
100+1.48 EUR
250+1.33 EUR
500+1.31 EUR
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IRF740ASPBF IRF740A.pdf
IRF740ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1396 Stücke:
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23+3.81 EUR
30+2.88 EUR
35+2.43 EUR
44+1.95 EUR
50+1.74 EUR
100+1.57 EUR
250+1.46 EUR
1000+1.38 EUR
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IRF740LCPBF description IRF740LC.pdf
IRF740LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 377 Stücke:
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18+4.87 EUR
35+2.5 EUR
42+2.05 EUR
50+1.81 EUR
100+1.59 EUR
250+1.43 EUR
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IRF740PBF IRF740PBF.pdf
IRF740PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2050 Stücke:
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31+2.81 EUR
46+1.86 EUR
54+1.59 EUR
55+1.57 EUR
100+1.43 EUR
250+1.27 EUR
500+1.19 EUR
1000+1.09 EUR
2000+1.02 EUR
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IRF740SPBF IRF740SPBF.pdf
IRF740SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
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19+4.59 EUR
27+3.18 EUR
32+2.69 EUR
50+2.37 EUR
100+2.14 EUR
150+2.02 EUR
250+1.9 EUR
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IRF740STRLPBF IRF740SPBF.pdf
IRF740STRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1.5KE18CA-E3/54 15ke_Ser.pdf
1.5KE18CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 1456 Stücke:
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69+1.24 EUR
87+0.99 EUR
105+0.81 EUR
139+0.62 EUR
163+0.52 EUR
174+0.49 EUR
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1.5KE180CA-E3/54 15ke_Ser.pdf
1.5KE180CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 1812 Stücke:
Lieferzeit 14-21 Tag (e)
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81+1.06 EUR
99+0.87 EUR
143+0.6 EUR
500+0.5 EUR
1000+0.46 EUR
1400+0.44 EUR
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1.5KE18A-E3/54 15ke_Ser.pdf
1.5KE18A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
120+0.71 EUR
134+0.64 EUR
142+0.61 EUR
147+0.58 EUR
250+0.56 EUR
500+0.54 EUR
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P6KE200A-E3/54 p6ke.pdf
P6KE200A-E3/54
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15,DO204AC; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 200V
Semiconductor structure: unidirectional
Case: DO15; DO204AC
Mounting: THT
Manufacturer series: P6KE
Kind of package: 13 inch reel
Leakage current: 1µA
Max. forward impulse current: 2.2A
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
Produkt ist nicht verfügbar
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1N5817-E3/54 1n5817-19.pdf
1N5817-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
auf Bestellung 2893 Stücke:
Lieferzeit 14-21 Tag (e)
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218+0.39 EUR
248+0.35 EUR
275+0.31 EUR
391+0.21 EUR
477+0.18 EUR
544+0.15 EUR
1000+0.14 EUR
2000+0.13 EUR
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1N5817-E3/73 1n5817-19.pdf
1N5817-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
auf Bestellung 7167 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+0.35 EUR
358+0.24 EUR
447+0.19 EUR
532+0.15 EUR
1000+0.14 EUR
3000+0.12 EUR
6000+0.11 EUR
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1N5819-E3/54 1n5817-19.pdf
1N5819-E3/54
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
auf Bestellung 2398 Stücke:
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186+0.46 EUR
230+0.37 EUR
266+0.32 EUR
417+0.2 EUR
556+0.15 EUR
1000+0.14 EUR
2000+0.13 EUR
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1N5819-E3/73 1n5817-19.pdf
1N5819-E3/73
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Max. forward voltage: 0.6V
Max. off-state voltage: 40V
Load current: 1A
Kind of package: Ammo Pack
Semiconductor structure: single diode
Case: DO41
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 25A
auf Bestellung 1471 Stücke:
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239+0.36 EUR
323+0.26 EUR
468+0.18 EUR
589+0.14 EUR
1000+0.13 EUR
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BAV99-E3-08 bav99.pdf
BAV99-E3-08BAV99-E3-08
BAV99-E3-08BAV99-E3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Manufacturer standard package: 3000pcs.
Features of semiconductor devices: fast switching; small signal
auf Bestellung 4595 Stücke:
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334+0.25 EUR
625+0.13 EUR
1112+0.076 EUR
1511+0.056 EUR
1749+0.049 EUR
3000+0.04 EUR
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BAV99-HE3-08 bav99.pdf
BAV99-HE3-08
Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Manufacturer standard package: 3000pcs.
Features of semiconductor devices: fast switching; small signal
auf Bestellung 10 Stücke:
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10+8.51 EUR
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1N4007GP-E3/54 1n4001gp.pdf
1N4007GP-E3/54
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; 13 inch reel; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: 13 inch reel
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Reverse recovery time: 2µs
Manufacturer standard package: 5500pcs.
auf Bestellung 5964 Stücke:
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209+0.4 EUR
249+0.35 EUR
275+0.31 EUR
327+0.26 EUR
500+0.21 EUR
1000+0.18 EUR
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357B0102MXB251S22 357.pdf
357B0102MXB251S22
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Shaft diameter: 6.35mm
Linearity tolerance: ±2%
L shaft length: 22mm
Thread length: 8mm
Characteristics: linear
Kind of potentiometer: single turn
Shaft length: 14mm
Potentiometer features: without limiters
Shaft surface: smooth
Fastening thread: 3/8"x32UNEF
Manufacturer series: 357
Type of potentiometer: shaft
Mechanical durability: 10000000 cycles
Track material: plastic
auf Bestellung 50 Stücke:
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2+51.69 EUR
3+45.08 EUR
10+41.09 EUR
25+38.98 EUR
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357B2102MAB251S22 357.pdf
357B2102MAB251S22
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Shaft diameter: 6.35mm
Linearity tolerance: ±2%
L shaft length: 22mm
Thread length: 8mm
Characteristics: linear
Kind of potentiometer: single turn
Shaft length: 14mm
Shaft surface: smooth
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Manufacturer series: 357
Type of potentiometer: shaft
Mechanical durability: 10000000 cycles
Track material: plastic
auf Bestellung 38 Stücke:
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2+49.03 EUR
3+43.26 EUR
10+42.42 EUR
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VJ1206A100KXAAC vjcommercialseries.pdf
VJ1206A100KXAAC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Operating temperature: -55...125°C
Mounting: SMD
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
auf Bestellung 1920 Stücke:
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510+0.17 EUR
590+0.14 EUR
710+0.12 EUR
1000+0.12 EUR
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BAS85-GS08 bas85.pdf
BAS85-GS08
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Manufacturer standard package: 2500pcs.
Power dissipation: 0.2W
Features of semiconductor devices: small signal
Max. load current: 0.3A
Capacitance: 10pF
auf Bestellung 72805 Stücke:
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157+0.55 EUR
250+0.35 EUR
406+0.21 EUR
566+0.15 EUR
1000+0.13 EUR
2500+0.11 EUR
5000+0.095 EUR
7500+0.087 EUR
12500+0.079 EUR
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BAS85-GS18 bas85.pdf
BAS85-GS18
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.2W
Manufacturer standard package: 10000pcs.
Features of semiconductor devices: small signal
Kind of package: 13 inch reel
auf Bestellung 13680 Stücke:
Lieferzeit 14-21 Tag (e)
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500+0.17 EUR
770+0.11 EUR
979+0.087 EUR
1208+0.07 EUR
1330+0.064 EUR
2500+0.061 EUR
5000+0.056 EUR
10000+0.049 EUR
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NTCLE100E3472JB0 ntcle100.pdf
NTCLE100E3472JB0
Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
Produkt ist nicht verfügbar
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1.5KE47CA-E3/54 15ke_Ser.pdf
1.5KE47CA-E3/54
Hersteller: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 13 inch reel
auf Bestellung 1321 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
93+0.92 EUR
118+0.73 EUR
133+0.64 EUR
140+0.61 EUR
250+0.58 EUR
500+0.55 EUR
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SIHA25N50E-GE3 siha25n50e.pdf
SIHA25N50E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHB25N50E-GE3 sihb25n50e.pdf
SIHB25N50E-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHG25N50E-GE3 sihg25n50e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SIHP25N50E-GE3 tf-sihp25n50e-ge3.pdf
SIHP25N50E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR10100-E3/4W MBR10100-E3-4W.pdf
MBR10100-E3/4W
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Kind of package: tube
Manufacturer standard package: 50pcs.
auf Bestellung 929 Stücke:
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90+0.95 EUR
94+0.9 EUR
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BZX85C12-TAP BZX85C10-TAP.pdf
BZX85C12-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 11449 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
228+0.37 EUR
511+0.17 EUR
650+0.13 EUR
893+0.095 EUR
944+0.09 EUR
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BZX85C5V1-TAP BZX85C10-TAP.pdf
BZX85C5V1-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; DO41; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 9259 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
491+0.18 EUR
556+0.15 EUR
633+0.13 EUR
803+0.11 EUR
1000+0.096 EUR
2500+0.087 EUR
5000+0.082 EUR
Mindestbestellmenge: 193 Stücke
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IRF540PBF IRF540PBF.pdf
IRF540PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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IRF540SPBF irf540s.pdf
IRF540SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Produkt ist nicht verfügbar
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TLLR4400 TLLx440x-DTE.pdf
TLLR4400
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Wavelength: 612...625nm
Viewing angle: 50°
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
auf Bestellung 2966 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
143+0.6 EUR
174+0.49 EUR
204+0.42 EUR
261+0.32 EUR
311+0.27 EUR
360+0.24 EUR
410+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 143 Stücke
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TLLR4400-AS12Z TLLR4400-AS12Z.pdf
TLLR4400-AS12Z
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Wavelength: 612...625nm
Viewing angle: 25°
Number of terminals: 2
Luminosity: 0.63...1.2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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TLLR4401 TLLx440x-DTE.pdf
TLLR4401
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Type of diode: LED
Operating voltage: 1.9...2.4V DC
LED current: 2mA
Front: convex
Terminal pitch: 2.54mm
Mounting: THT
Wavelength: 612...625nm
Viewing angle: 50°
Number of terminals: 2
Luminosity: 1...2mcd
LED diameter: 3mm
LED lens: diffused; red
LED colour: red
auf Bestellung 3239 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
167+0.51 EUR
213+0.4 EUR
239+0.36 EUR
261+0.32 EUR
285+0.3 EUR
321+0.26 EUR
500+0.24 EUR
1000+0.21 EUR
Mindestbestellmenge: 167 Stücke
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BZX55C8V2-TAP BZX55C10-TAP.pdf
BZX55C8V2-TAP
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; DO35; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
auf Bestellung 20919 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
834+0.1 EUR
1352+0.063 EUR
1786+0.048 EUR
2101+0.04 EUR
2416+0.036 EUR
2618+0.032 EUR
Mindestbestellmenge: 834 Stücke
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VJ1206G107MXYTW1BC vjw1bcbascomseries.pdf
VJ1206G107MXYTW1BC
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 100µF
Tolerance: ±20%
Mounting: SMD
Operating temperature: -55...85°C
Operating voltage: 6.3V
Dielectric: X5R
Case - inch: 1206
Case - mm: 3216
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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