| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SS36HE3_B/I | VISHAY |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; 13 inch reel Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: 13 inch reel Manufacturer standard package: 3500pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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SS36HM3_A/I | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AB,SMC; SMD; 60V; 3A Type of diode: Schottky rectifying Case: DO214AB; SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Leakage current: 0.5mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| SiHH14N65E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 56W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 56W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 38A Gate charge: 96nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SiHH14N65EF-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 36A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.5A Power dissipation: 156W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 271mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 98nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
SM6T6V8CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.45V; 57A; bidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45V Max. forward impulse current: 57A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 2mA Manufacturer series: SM6T Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SM6T6V8CA-M3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.45V; 57A; bidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45V Max. forward impulse current: 57A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Manufacturer series: SM6T Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SM6T6V8CA-M3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 6.45V; 57A; bidirectional; ±5%; DO214AA,SMB; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45V Max. forward impulse current: 57A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1mA Manufacturer series: SM6T Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| TCET1113G | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Manufacturer series: TCET1113 Mounting: THT CTR@If: 100-200%@10mA Kind of output: transistor Insulation voltage: 5kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 9µs Case: DIP4 Conform to the norm: UL; VDE Turn-off time: 10µs Number of channels: 1 Collector-emitter voltage: 70V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
M55342K12B221ERS6 | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 221kΩ; SMD; 0603; 100mW; ±1%; 1.6x0.81x0.46mm Type of resistor: thick film Resistance: 221kΩ Mounting: SMD Case - inch: 0603 Power: 0.1W Tolerance: ±1% Body dimensions: 1.6x0.81x0.46mm Operating temperature: -65...150°C Temperature coefficient: 100ppm/°C Quantity in set/package: 300pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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MRS25000C4229FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; 42.2Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm Length: 6.5mm Tolerance: ±1% Diameter: 2.5mm Type of resistor: thin film Mounting: THT Resistance: 42.2Ω Body dimensions: Ø2.5x6.5mm Power: 0.6W Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.6x28mm Operating voltage: 350V |
auf Bestellung 3640 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SS36HE3_B/I |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: 13 inch reel
Manufacturer standard package: 3500pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: 13 inch reel
Manufacturer standard package: 3500pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SS36HM3_A/I |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AB,SMC; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: DO214AB; SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AB,SMC; SMD; 60V; 3A
Type of diode: Schottky rectifying
Case: DO214AB; SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SiHH14N65E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 56W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 56W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 38A
Gate charge: 96nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SiHH14N65EF-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 36A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 271mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 98nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.5A; Idm: 36A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.5A
Power dissipation: 156W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 271mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 98nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SM6T6V8CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.45V; 57A; bidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SM6T
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.45V; 57A; bidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SM6T
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SM6T6V8CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.45V; 57A; bidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SM6T
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.45V; 57A; bidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SM6T
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SM6T6V8CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.45V; 57A; bidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1mA
Manufacturer series: SM6T
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.45V; 57A; bidirectional; ±5%; DO214AA,SMB; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1mA
Manufacturer series: SM6T
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 6400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TCET1113G |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Manufacturer series: TCET1113
Mounting: THT
CTR@If: 100-200%@10mA
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 9µs
Case: DIP4
Conform to the norm: UL; VDE
Turn-off time: 10µs
Number of channels: 1
Collector-emitter voltage: 70V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Manufacturer series: TCET1113
Mounting: THT
CTR@If: 100-200%@10mA
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 9µs
Case: DIP4
Conform to the norm: UL; VDE
Turn-off time: 10µs
Number of channels: 1
Collector-emitter voltage: 70V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| M55342K12B221ERS6 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 221kΩ; SMD; 0603; 100mW; ±1%; 1.6x0.81x0.46mm
Type of resistor: thick film
Resistance: 221kΩ
Mounting: SMD
Case - inch: 0603
Power: 0.1W
Tolerance: ±1%
Body dimensions: 1.6x0.81x0.46mm
Operating temperature: -65...150°C
Temperature coefficient: 100ppm/°C
Quantity in set/package: 300pcs.
Category: SMD resistors
Description: Resistor: thick film; 221kΩ; SMD; 0603; 100mW; ±1%; 1.6x0.81x0.46mm
Type of resistor: thick film
Resistance: 221kΩ
Mounting: SMD
Case - inch: 0603
Power: 0.1W
Tolerance: ±1%
Body dimensions: 1.6x0.81x0.46mm
Operating temperature: -65...150°C
Temperature coefficient: 100ppm/°C
Quantity in set/package: 300pcs.
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MRS25000C4229FCT00 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; 42.2Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm
Length: 6.5mm
Tolerance: ±1%
Diameter: 2.5mm
Type of resistor: thin film
Mounting: THT
Resistance: 42.2Ω
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Operating voltage: 350V
Category: THT Resistors
Description: Resistor: thin film; 42.2Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm
Length: 6.5mm
Tolerance: ±1%
Diameter: 2.5mm
Type of resistor: thin film
Mounting: THT
Resistance: 42.2Ω
Body dimensions: Ø2.5x6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Operating voltage: 350V
auf Bestellung 3640 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 470+ | 0.18 EUR |
| 750+ | 0.11 EUR |
| 950+ | 0.09 EUR |
| 1400+ | 0.061 EUR |