| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| BU2506-E3/45 | VISHAY |
 Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 0.3kA Version: flat Case: BU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Technology: isoCink+™ Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BU2506-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 25A Max. forward impulse current: 0.3kA Version: flat Case: BU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 0.95V Technology: isoCink+™ Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BU2506-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 300A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 25A Max. forward impulse current: 0.3kA Version: flat Case: BU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Technology: isoCink+™ Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SMCJ54CAHE3_A/I | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMCJ54CAHE3_A/H | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3400 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMCJ54CAHM3_A/H | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3400 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMCJ54CAHM3_A/I | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMAJ13CAHE3_A/H | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 14.4÷15.9V; 18.6A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMAJ Technology: TransZorb® Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMAJ13CAHE3_A/I | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 14.4÷15.9V; 18.6A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMAJ Technology: TransZorb® Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMAJ13CAHM3_A/I | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 14.4÷15.9V; 18.6A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMAJ Technology: TransZorb® Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SiUD403ED-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -0.5A; Idm: -0.8A Mounting: SMD Pulsed drain current: -0.8A Power dissipation: 1.25W Gate charge: 1.7nC Polarisation: unipolar Technology: TrenchFET® Drain current: -0.5A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: PowerPAK® 0806-3 On-state resistance: 4.4Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SIP12108DMP-T1GE4 | VISHAY |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A Mounting: SMD Operating temperature: -40...85°C Input voltage: 2.8...5.5V DC Output current: 5A Type of integrated circuit: PMIC Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP Efficiency: 95% Output voltage: 0.6...4.675V DC Kind of package: reel; tape Case: QFN16 Kind of integrated circuit: DC/DC converter Frequency: 0.2...4MHz Topology: buck |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SIP12108ADMP-T1GE4 | VISHAY |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A Mounting: SMD Operating temperature: -40...85°C Input voltage: 2.8...5.5V DC Output current: 5A Type of integrated circuit: PMIC Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP Efficiency: 95% Output voltage: 0.6...4.675V DC Kind of package: reel; tape Case: QFN16 Kind of integrated circuit: DC/DC converter Frequency: 0.2...4MHz Topology: buck |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MRS25000C2108FC100 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; 2.1Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; L: 6.5mm Operating voltage: 350V Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Mounting: THT Operating temperature: -55...155°C Diameter: 2.5mm Type of resistor: thin film Resistance: 2.1Ω Length: 6.5mm Power: 0.6W Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.6x28mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| M55342E12B16B0RTI | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 16kΩ; 1.63x0.81x0.84mm Resistance: 16kΩ Body dimensions: 1.63x0.81x0.84mm Type of resistor: thin film |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 35 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BYT56G-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 80A; SOD64; Ufmax: 1.4V; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Max. forward impulse current: 80A Case: SOD64 Max. forward voltage: 1.4V Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BYT56J-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 80A; SOD64; Ammo Pack; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Max. forward impulse current: 80A Case: SOD64 Kind of package: Ammo Pack Max. forward voltage: 1.4V Reverse recovery time: 100ns Leakage current: 0.15mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BYT56K-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 80A; SOD64; Ufmax: 1.4V; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Max. forward impulse current: 80A Case: SOD64 Max. forward voltage: 1.4V Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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VBT10202C-M3/4W | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 200V; 5A Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.88V Max. off-state voltage: 200V Load current: 5A Semiconductor structure: common cathode; double Leakage current: 0.15mA Case: D2PAK; TO263AB Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MRS25000C2200FC100 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; 220Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; L: 6.5mm Type of resistor: thin film Resistance: 220Ω Mounting: THT Power: 0.6W Tolerance: ±1% Operating voltage: 350V Leads dimensions: Ø0.6x28mm Body dimensions: Ø2.5x6.5mm Temperature coefficient: 50ppm/°C Length: 6.5mm Diameter: 2.5mm Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MRS25000C4709FC100 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; 47Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C Type of resistor: thin film Resistance: 47Ω Mounting: THT Power: 0.6W Tolerance: ±1% Operating voltage: 350V Leads dimensions: Ø0.6x28mm Body dimensions: Ø2.5x6.5mm Temperature coefficient: 50ppm/°C Length: 6.5mm Diameter: 2.5mm Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SS2FH6HM3/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO219AB,SMF; SMD; 60V; 2A; 7 inch reel Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 0.64V Application: automotive industry Max. off-state voltage: 60V Load current: 2A Kind of package: 7 inch reel Semiconductor structure: single diode Case: DO219AB; SMF Type of diode: Schottky rectifying |
auf Bestellung 7278 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BU2506-E3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: flat
Case: BU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Technology: isoCink+™
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: flat
Case: BU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Technology: isoCink+™
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BU2506-E3/51 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: flat
Case: BU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 0.95V
Technology: isoCink+™
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: flat
Case: BU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 0.95V
Technology: isoCink+™
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BU2506-M3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: flat
Case: BU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Technology: isoCink+™
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: flat
Case: BU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 0.95V
Technology: isoCink+™
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ54CAHE3_A/I |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ54CAHE3_A/H |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ54CAHM3_A/H |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMCJ54CAHM3_A/I |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ13CAHE3_A/H |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷15.9V; 18.6A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷15.9V; 18.6A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ13CAHE3_A/I |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷15.9V; 18.6A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷15.9V; 18.6A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMAJ13CAHM3_A/I |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷15.9V; 18.6A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 14.4÷15.9V; 18.6A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Produkt ist nicht verfügbar
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| SiUD403ED-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -0.5A; Idm: -0.8A
Mounting: SMD
Pulsed drain current: -0.8A
Power dissipation: 1.25W
Gate charge: 1.7nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -0.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: PowerPAK® 0806-3
On-state resistance: 4.4Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -0.5A; Idm: -0.8A
Mounting: SMD
Pulsed drain current: -0.8A
Power dissipation: 1.25W
Gate charge: 1.7nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -0.5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: PowerPAK® 0806-3
On-state resistance: 4.4Ω
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| SIP12108DMP-T1GE4 |
|
Hersteller: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 2.8...5.5V DC
Output current: 5A
Type of integrated circuit: PMIC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Efficiency: 95%
Output voltage: 0.6...4.675V DC
Kind of package: reel; tape
Case: QFN16
Kind of integrated circuit: DC/DC converter
Frequency: 0.2...4MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 2.8...5.5V DC
Output current: 5A
Type of integrated circuit: PMIC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Efficiency: 95%
Output voltage: 0.6...4.675V DC
Kind of package: reel; tape
Case: QFN16
Kind of integrated circuit: DC/DC converter
Frequency: 0.2...4MHz
Topology: buck
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| SIP12108ADMP-T1GE4 |
|
Hersteller: VISHAY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 2.8...5.5V DC
Output current: 5A
Type of integrated circuit: PMIC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Efficiency: 95%
Output voltage: 0.6...4.675V DC
Kind of package: reel; tape
Case: QFN16
Kind of integrated circuit: DC/DC converter
Frequency: 0.2...4MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.8÷5.5VDC; Uout: 0.6÷4.675VDC; 5A
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 2.8...5.5V DC
Output current: 5A
Type of integrated circuit: PMIC
Protection: anti-overvoltage OVP; over current OCP; overheating OTP; short circuit protection SCP; undervoltage UVP
Efficiency: 95%
Output voltage: 0.6...4.675V DC
Kind of package: reel; tape
Case: QFN16
Kind of integrated circuit: DC/DC converter
Frequency: 0.2...4MHz
Topology: buck
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| MRS25000C2108FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; 2.1Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; L: 6.5mm
Operating voltage: 350V
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Mounting: THT
Operating temperature: -55...155°C
Diameter: 2.5mm
Type of resistor: thin film
Resistance: 2.1Ω
Length: 6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Category: THT Resistors
Description: Resistor: thin film; 2.1Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; L: 6.5mm
Operating voltage: 350V
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Mounting: THT
Operating temperature: -55...155°C
Diameter: 2.5mm
Type of resistor: thin film
Resistance: 2.1Ω
Length: 6.5mm
Power: 0.6W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| M55342E12B16B0RTI |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 16kΩ; 1.63x0.81x0.84mm
Resistance: 16kΩ
Body dimensions: 1.63x0.81x0.84mm
Type of resistor: thin film
Category: SMD resistors
Description: Resistor: thin film; 16kΩ; 1.63x0.81x0.84mm
Resistance: 16kΩ
Body dimensions: 1.63x0.81x0.84mm
Type of resistor: thin film
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| BYT56G-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 80A; SOD64; Ufmax: 1.4V; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Max. forward impulse current: 80A
Case: SOD64
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 80A; SOD64; Ufmax: 1.4V; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Max. forward impulse current: 80A
Case: SOD64
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
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| BYT56J-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 80A; SOD64; Ammo Pack; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Max. forward impulse current: 80A
Case: SOD64
Kind of package: Ammo Pack
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
Leakage current: 0.15mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 80A; SOD64; Ammo Pack; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated
Max. forward impulse current: 80A
Case: SOD64
Kind of package: Ammo Pack
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
Leakage current: 0.15mA
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| BYT56K-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 80A; SOD64; Ufmax: 1.4V; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Max. forward impulse current: 80A
Case: SOD64
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; Ifsm: 80A; SOD64; Ufmax: 1.4V; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Max. forward impulse current: 80A
Case: SOD64
Max. forward voltage: 1.4V
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
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| VBT10202C-M3/4W |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 200V; 5A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.88V
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: common cathode; double
Leakage current: 0.15mA
Case: D2PAK; TO263AB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 200V; 5A
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.88V
Max. off-state voltage: 200V
Load current: 5A
Semiconductor structure: common cathode; double
Leakage current: 0.15mA
Case: D2PAK; TO263AB
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MRS25000C2200FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; 220Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; L: 6.5mm
Type of resistor: thin film
Resistance: 220Ω
Mounting: THT
Power: 0.6W
Tolerance: ±1%
Operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Length: 6.5mm
Diameter: 2.5mm
Operating temperature: -55...155°C
Category: THT Resistors
Description: Resistor: thin film; 220Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; L: 6.5mm
Type of resistor: thin film
Resistance: 220Ω
Mounting: THT
Power: 0.6W
Tolerance: ±1%
Operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Length: 6.5mm
Diameter: 2.5mm
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
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| MRS25000C4709FC100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: thin film; 47Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C
Type of resistor: thin film
Resistance: 47Ω
Mounting: THT
Power: 0.6W
Tolerance: ±1%
Operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Length: 6.5mm
Diameter: 2.5mm
Operating temperature: -55...155°C
Category: THT Resistors
Description: Resistor: thin film; 47Ω; THT; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C
Type of resistor: thin film
Resistance: 47Ω
Mounting: THT
Power: 0.6W
Tolerance: ±1%
Operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Length: 6.5mm
Diameter: 2.5mm
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
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| SS2FH6HM3/H |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO219AB,SMF; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.64V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: DO219AB; SMF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO219AB,SMF; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.64V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: DO219AB; SMF
Type of diode: Schottky rectifying
auf Bestellung 7278 Stücke:
Lieferzeit 14-21 Tag (e)