| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MAL214651102E3 | VISHAY |
 Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø18x20mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Body dimensions: Ø18x20mm Terminal pitch: 7.5mm Tolerance: ±20% Service life: 4000h Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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GRC00JE1021H00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Terminal pitch: 7.5mm Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 16x20mm |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL215031102E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm Mounting: THT Terminal pitch: 7.5mm Tolerance: ±20% Body dimensions: Ø16x25mm Type of capacitor: electrolytic Capacitance: 1mF Operating voltage: 50V DC Service life: 10000h |
auf Bestellung 419 Stücke: Lieferzeit 14-21 Tag (e) |
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ZRC00JG1021H00L | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 16x25mm |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7852DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 1.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 7.6A Pulsed drain current: 50A Power dissipation: 1.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SS26-E3/52T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 60V Max. forward voltage: 0.7V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 75A |
auf Bestellung 13745 Stücke: Lieferzeit 14-21 Tag (e) |
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SS26HE3_A/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 60V Max. forward voltage: 0.7V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 75A |
auf Bestellung 388 Stücke: Lieferzeit 14-21 Tag (e) |
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SS26S-E3/5AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMA; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 60V Max. forward voltage: 0.62V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 10mA |
Produkt ist nicht verfügbar |
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SS26S-E3/61T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMA; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 60V Max. forward voltage: 0.62V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 40A Leakage current: 10mA |
auf Bestellung 1625 Stücke: Lieferzeit 14-21 Tag (e) |
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| SISS26DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 7.8mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 60A |
Produkt ist nicht verfügbar |
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| SISS26LDN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 65A |
Produkt ist nicht verfügbar |
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TSSS2600 | VISHAY |
Category: IR LEDs Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; THT; 100mA Type of diode: IR transmitter Wavelength: 950nm LED lens: transparent Optical power: 2.6mW Viewing angle: 25° Mounting: THT Dimensions: 3.6x2.2x5mm LED current: 100mA LED version: angular Operating voltage: 1.25...1.6V |
auf Bestellung 4843 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840ALPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm |
auf Bestellung 915 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 931 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840ASTRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF840LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm |
auf Bestellung 1472 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 726 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF840STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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1.5KE10CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 10V; 103A; bidirectional; DO201; 1.5kW; reel,tape; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 103A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 20µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
auf Bestellung 866 Stücke: Lieferzeit 14-21 Tag (e) |
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| VEMI65AB-HCI-GS08 | VISHAY |
Category: SMD suppression filters Description: Filter: anti-interference; 100Ω; SMD; 2.25mmx1.4mmx600um; 100MHz Resistance: 100Ω Mounting: SMD Operating temperature: -40...125°C Body dimensions: 2.25mmx1.4mmx600µm Number of channels: 8 Cutoff frequency: 100MHz Capacitance: 40pF Type of filter: anti-interference |
Produkt ist nicht verfügbar |
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14910F0GJSX10101KA | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 100Ω; 1W; ±10%; 6.35mm; THT Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 100Ω Power: 1W Tolerance: ±10% Shaft diameter: 6.35mm Mounting: THT Shaft surface: smooth Body dimensions: 12.5x12.5x8.8mm Potentiometer series: 149 Electrical rotation angle: 270 ±10° Operating temperature: -40...150°C Temperature coefficient: 150ppm/°C Potentiometer features: for industrial use Electrical life: 25000 cycles Potentiometer standard: 12,5mm Max. operating voltage: 350V AC Track material: cermet Linearity tolerance: ±5% |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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| CMA02040X1000GB300 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; SMD; 0204 MiniMELF; 100Ω; 250mW; ±2% Case: 0204 MiniMELF Mounting: SMD Operating temperature: -55...155°C Tolerance: ±2% Resistance: 100Ω Body dimensions: Ø1.4x3.6mm Temperature coefficient: -250ppm/°C Max. operating voltage: 200V Conform to the norm: AEC Q200 Type of resistor: carbon film Power: 0.25W |
Produkt ist nicht verfügbar |
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| CMA02040X4702GB300 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; SMD; 0204 MiniMELF; 47kΩ; 250mW; ±2% Type of resistor: carbon film Mounting: SMD Case: 0204 MiniMELF Resistance: 47kΩ Power: 0.25W Tolerance: ±2% Max. operating voltage: 200V Body dimensions: Ø1.4x3.6mm Operating temperature: -55...155°C Temperature coefficient: -275ppm/°C Conform to the norm: AEC Q200 |
Produkt ist nicht verfügbar |
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BAS40-05-E3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 40V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 40V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: common cathode; double Features of semiconductor devices: small signal Capacitance: 5pF Max. forward voltage: 1V Case: SOT23 Kind of package: reel; tape Leakage current: 0.1µA Max. forward impulse current: 0.6A Power dissipation: 0.2W |
auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS3P4L-M3/86A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.335V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 150A |
Produkt ist nicht verfügbar |
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| SS10P3CL-M3/86A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 10V; 5Ax2; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 10V Load current: 5A x2 Semiconductor structure: common cathode; double Capacitance: 560pF Max. forward voltage: 0.52V Case: SMPC Kind of package: reel; tape Max. forward impulse current: 200A |
Produkt ist nicht verfügbar |
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1.5KE27A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 27.05V; 40A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
auf Bestellung 1535 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE27CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 23.1V Breakdown voltage: 27.05V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
Produkt ist nicht verfügbar |
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TCST2300 | VISHAY |
 Category: PCB Photoelectric SensorsDescription: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm Mounting: SMD; THT Collector-emitter voltage: 70V Body dimensions: 24.5x6.3x10.8mm Output current: 0.5mA Kind of output: transistor Kind of optocoupler: slotted with flag Slot width: 3.1mm Aperture width: 0.25mm Wavelength: 950nm Operation mode: through-beam (with slot) Type of sensor: optocoupler Operating temperature: -55...85°C |
Produkt ist nicht verfügbar |
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BAT54-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 10pF Max. forward voltage: 0.8V Case: SOT23 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.23W |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5231B-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 11344 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5231C-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Zener voltage: 5.1V Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener |
Produkt ist nicht verfügbar |
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ZMY15-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 15V; SMD; reel,tape; MELF; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Kind of package: reel; tape Case: MELF Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
auf Bestellung 3337 Stücke: Lieferzeit 14-21 Tag (e) |
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| ZMY15-GS18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 15V; SMD; reel,tape; MELF; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Kind of package: reel; tape Case: MELF Mounting: SMD Tolerance: ±7% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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1.5KE440A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 440V; 2.5A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 376V Breakdown voltage: 440V Max. forward impulse current: 2.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
Produkt ist nicht verfügbar |
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K3021P | VISHAY |
Category: Optotriacs Description: Optotriac; 3.75kV; Uout: 400V; DIP6; Ch: 1; K3020P Mounting: THT Max. off-state voltage: 5V Case: DIP6 Manufacturer series: K3020P Kind of output: without zero voltage crossing driver Insulation voltage: 3.75kV Type of optocoupler: optotriac Output voltage: 400V Number of channels: 1 Trigger current: 8mA |
auf Bestellung 810 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805110RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 110Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
auf Bestellung 8400 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805110RJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 110Ω Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Operating temperature: -55...155°C |
Produkt ist nicht verfügbar |
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1N5822-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; reel,tape Max. off-state voltage: 40V Max. forward voltage: 0.525V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 80A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: THT Case: DO201AD |
auf Bestellung 1288 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV26C-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Mounting: THT Case: SOD57 Max. off-state voltage: 0.6kV Max. forward voltage: 1.3V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 30ns Max. forward impulse current: 30A Leakage current: 0.1mA |
auf Bestellung 14626 Stücke: Lieferzeit 14-21 Tag (e) |
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BYV26C-TR | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; SOD57; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated Kind of package: reel; tape Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 1.3V Leakage current: 0.1mA Reverse recovery time: 30ns |
auf Bestellung 2108 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C27-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode Kind of package: Ammo Pack Semiconductor structure: single diode Zener voltage: 27V Power dissipation: 1.3W Type of diode: Zener Mounting: THT Case: DO41 Tolerance: ±5% |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE400A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 342V Breakdown voltage: 400V Max. forward impulse current: 2.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
auf Bestellung 386 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 963 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740ASPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 1551 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740LCPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 357 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 2875 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 891 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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1.5KE18CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
auf Bestellung 515 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE180A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; reel,tape Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
auf Bestellung 1746 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE180CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 154V Breakdown voltage: 180V Max. forward impulse current: 6.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE18A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; reel,tape Type of diode: TVS Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE200A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; reel,tape; P6KE Type of diode: TVS Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6KE |
Produkt ist nicht verfügbar |
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1N4937-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO41; Ufmax: 1.2V; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 12pF Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Leakage current: 0.1mA Reverse recovery time: 200ns |
auf Bestellung 8455 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4937-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 12pF Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Leakage current: 0.1mA Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |
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SB160-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: THT Case: DO41 Max. off-state voltage: 60V Max. forward voltage: 0.65V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A |
auf Bestellung 3890 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL014TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2908 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL110TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.93A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3362 Stücke: Lieferzeit 14-21 Tag (e) |
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| MAL214651102E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø18x20mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø18x20mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...125°C
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1mF; 50VDC; Ø18x20mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Body dimensions: Ø18x20mm
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 4000h
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
| GRC00JE1021H00L |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Pitch: 7.5mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Terminal pitch: 7.5mm
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 16x20mm
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 45+ | 1.62 EUR |
| 100+ | 0.72 EUR |
| 150+ | 0.47 EUR |
| MAL215031102E3 |
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Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Mounting: THT
Terminal pitch: 7.5mm
Tolerance: ±20%
Body dimensions: Ø16x25mm
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 50V DC
Service life: 10000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; Ø16x25mm; Pitch: 7.5mm
Mounting: THT
Terminal pitch: 7.5mm
Tolerance: ±20%
Body dimensions: Ø16x25mm
Type of capacitor: electrolytic
Capacitance: 1mF
Operating voltage: 50V DC
Service life: 10000h
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.6 EUR |
| 35+ | 2.1 EUR |
| 37+ | 1.98 EUR |
| ZRC00JG1021H00L |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 50VDC; ±20%; 10000h; 16x25mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 16x25mm
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.93 EUR |
| 58+ | 1.24 EUR |
| 112+ | 0.64 EUR |
| 118+ | 0.61 EUR |
| SI7852DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 1.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 7.6A
Pulsed drain current: 50A
Power dissipation: 1.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SS26-E3/52T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.7V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.7V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 75A
auf Bestellung 13745 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 305+ | 0.23 EUR |
| 385+ | 0.19 EUR |
| 435+ | 0.16 EUR |
| 510+ | 0.14 EUR |
| 535+ | 0.13 EUR |
| SS26HE3_A/H |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.7V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.7V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 75A
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 150+ | 0.48 EUR |
| 169+ | 0.42 EUR |
| 196+ | 0.37 EUR |
| 207+ | 0.35 EUR |
| SS26S-E3/5AT |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 10mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 10mA
Produkt ist nicht verfügbar
| SS26S-E3/61T |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 10mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; SMA; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 60V
Max. forward voltage: 0.62V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 40A
Leakage current: 10mA
auf Bestellung 1625 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 143+ | 0.5 EUR |
| 203+ | 0.35 EUR |
| 275+ | 0.26 EUR |
| 341+ | 0.21 EUR |
| 360+ | 0.2 EUR |
| 500+ | 0.19 EUR |
| SISS26DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 60A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 60A
Produkt ist nicht verfügbar
| SISS26LDN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 65A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W
Case: PowerPAK® 1212-8
Mounting: SMD
On-state resistance: 6.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 60V
Drain current: 65A
Produkt ist nicht verfügbar
| TSSS2600 |
|
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; THT; 100mA
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Optical power: 2.6mW
Viewing angle: 25°
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
Operating voltage: 1.25...1.6V
Category: IR LEDs
Description: IR transmitter; 950nm; transparent; 2.6mW; 25°; THT; 100mA
Type of diode: IR transmitter
Wavelength: 950nm
LED lens: transparent
Optical power: 2.6mW
Viewing angle: 25°
Mounting: THT
Dimensions: 3.6x2.2x5mm
LED current: 100mA
LED version: angular
Operating voltage: 1.25...1.6V
auf Bestellung 4843 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 60+ | 1.2 EUR |
| 119+ | 0.6 EUR |
| 185+ | 0.39 EUR |
| 257+ | 0.28 EUR |
| 271+ | 0.26 EUR |
| IRF840ALPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 2.3 EUR |
| IRF840APBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
auf Bestellung 915 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 2.36 EUR |
| 37+ | 1.94 EUR |
| 72+ | 1 EUR |
| 76+ | 0.94 EUR |
| IRF840ASPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 931 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.66 EUR |
| 49+ | 1.49 EUR |
| 55+ | 1.32 EUR |
| 63+ | 1.14 EUR |
| 67+ | 1.07 EUR |
| IRF840ASTRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF840LCPBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.14...1.4mm
auf Bestellung 1472 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 45+ | 1.6 EUR |
| 50+ | 1.44 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.1 EUR |
| 69+ | 1.04 EUR |
| IRF840SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 726 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 61+ | 1.17 EUR |
| 70+ | 1.03 EUR |
| 74+ | 0.97 EUR |
| 250+ | 0.93 EUR |
| IRF840STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 1.5KE10CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 10V; 103A; bidirectional; DO201; 1.5kW; reel,tape; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 10V; 103A; bidirectional; DO201; 1.5kW; reel,tape; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 20µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
auf Bestellung 866 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 164+ | 0.44 EUR |
| 198+ | 0.36 EUR |
| 210+ | 0.34 EUR |
| VEMI65AB-HCI-GS08 |
|
Hersteller: VISHAY
Category: SMD suppression filters
Description: Filter: anti-interference; 100Ω; SMD; 2.25mmx1.4mmx600um; 100MHz
Resistance: 100Ω
Mounting: SMD
Operating temperature: -40...125°C
Body dimensions: 2.25mmx1.4mmx600µm
Number of channels: 8
Cutoff frequency: 100MHz
Capacitance: 40pF
Type of filter: anti-interference
Category: SMD suppression filters
Description: Filter: anti-interference; 100Ω; SMD; 2.25mmx1.4mmx600um; 100MHz
Resistance: 100Ω
Mounting: SMD
Operating temperature: -40...125°C
Body dimensions: 2.25mmx1.4mmx600µm
Number of channels: 8
Cutoff frequency: 100MHz
Capacitance: 40pF
Type of filter: anti-interference
Produkt ist nicht verfügbar
| 14910F0GJSX10101KA |
|
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 100Ω; 1W; ±10%; 6.35mm; THT
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 100Ω
Power: 1W
Tolerance: ±10%
Shaft diameter: 6.35mm
Mounting: THT
Shaft surface: smooth
Body dimensions: 12.5x12.5x8.8mm
Potentiometer series: 149
Electrical rotation angle: 270 ±10°
Operating temperature: -40...150°C
Temperature coefficient: 150ppm/°C
Potentiometer features: for industrial use
Electrical life: 25000 cycles
Potentiometer standard: 12,5mm
Max. operating voltage: 350V AC
Track material: cermet
Linearity tolerance: ±5%
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 100Ω; 1W; ±10%; 6.35mm; THT
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 100Ω
Power: 1W
Tolerance: ±10%
Shaft diameter: 6.35mm
Mounting: THT
Shaft surface: smooth
Body dimensions: 12.5x12.5x8.8mm
Potentiometer series: 149
Electrical rotation angle: 270 ±10°
Operating temperature: -40...150°C
Temperature coefficient: 150ppm/°C
Potentiometer features: for industrial use
Electrical life: 25000 cycles
Potentiometer standard: 12,5mm
Max. operating voltage: 350V AC
Track material: cermet
Linearity tolerance: ±5%
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 17.98 EUR |
| 7+ | 10.9 EUR |
| CMA02040X1000GB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0204 MiniMELF; 100Ω; 250mW; ±2%
Case: 0204 MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±2%
Resistance: 100Ω
Body dimensions: Ø1.4x3.6mm
Temperature coefficient: -250ppm/°C
Max. operating voltage: 200V
Conform to the norm: AEC Q200
Type of resistor: carbon film
Power: 0.25W
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0204 MiniMELF; 100Ω; 250mW; ±2%
Case: 0204 MiniMELF
Mounting: SMD
Operating temperature: -55...155°C
Tolerance: ±2%
Resistance: 100Ω
Body dimensions: Ø1.4x3.6mm
Temperature coefficient: -250ppm/°C
Max. operating voltage: 200V
Conform to the norm: AEC Q200
Type of resistor: carbon film
Power: 0.25W
Produkt ist nicht verfügbar
| CMA02040X4702GB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0204 MiniMELF; 47kΩ; 250mW; ±2%
Type of resistor: carbon film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 47kΩ
Power: 0.25W
Tolerance: ±2%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: -275ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0204 MiniMELF; 47kΩ; 250mW; ±2%
Type of resistor: carbon film
Mounting: SMD
Case: 0204 MiniMELF
Resistance: 47kΩ
Power: 0.25W
Tolerance: ±2%
Max. operating voltage: 200V
Body dimensions: Ø1.4x3.6mm
Operating temperature: -55...155°C
Temperature coefficient: -275ppm/°C
Conform to the norm: AEC Q200
Produkt ist nicht verfügbar
| BAS40-05-E3-08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 5pF
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 40V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: small signal
Capacitance: 5pF
Max. forward voltage: 1V
Case: SOT23
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 705+ | 0.1 EUR |
| 1270+ | 0.056 EUR |
| 1530+ | 0.047 EUR |
| 1620+ | 0.044 EUR |
| SS3P4L-M3/86A |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.335V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.335V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 150A
Produkt ist nicht verfügbar
| SS10P3CL-M3/86A |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 5Ax2; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 5A x2
Semiconductor structure: common cathode; double
Capacitance: 560pF
Max. forward voltage: 0.52V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 10V; 5Ax2; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 10V
Load current: 5A x2
Semiconductor structure: common cathode; double
Capacitance: 560pF
Max. forward voltage: 0.52V
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
| 1.5KE27A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 27.05V; 40A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 27.05V; 40A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
auf Bestellung 1535 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 146+ | 0.49 EUR |
| 177+ | 0.4 EUR |
| 222+ | 0.32 EUR |
| 235+ | 0.3 EUR |
| 1.5KE27CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 27.05V; 40A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 23.1V
Breakdown voltage: 27.05V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Produkt ist nicht verfügbar
| TCST2300 | |
|
Hersteller: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Mounting: SMD; THT
Collector-emitter voltage: 70V
Body dimensions: 24.5x6.3x10.8mm
Output current: 0.5mA
Kind of output: transistor
Kind of optocoupler: slotted with flag
Slot width: 3.1mm
Aperture width: 0.25mm
Wavelength: 950nm
Operation mode: through-beam (with slot)
Type of sensor: optocoupler
Operating temperature: -55...85°C
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; through-beam (with slot); Slot width: 3.1mm
Mounting: SMD; THT
Collector-emitter voltage: 70V
Body dimensions: 24.5x6.3x10.8mm
Output current: 0.5mA
Kind of output: transistor
Kind of optocoupler: slotted with flag
Slot width: 3.1mm
Aperture width: 0.25mm
Wavelength: 950nm
Operation mode: through-beam (with slot)
Type of sensor: optocoupler
Operating temperature: -55...85°C
Produkt ist nicht verfügbar
| BAT54-HE3-08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 620+ | 0.12 EUR |
| 1020+ | 0.07 EUR |
| 1270+ | 0.056 EUR |
| 1350+ | 0.053 EUR |
| MMSZ5231B-E3-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 11344 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1525+ | 0.047 EUR |
| 1670+ | 0.043 EUR |
| 1890+ | 0.038 EUR |
| 2180+ | 0.033 EUR |
| 2305+ | 0.031 EUR |
| MMSZ5231C-E3-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 5.1V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 5.1V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Produkt ist nicht verfügbar
| ZMY15-GS08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: MELF
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: MELF
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
auf Bestellung 3337 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 353+ | 0.2 EUR |
| 463+ | 0.15 EUR |
| 516+ | 0.14 EUR |
| 583+ | 0.12 EUR |
| 1500+ | 0.11 EUR |
| ZMY15-GS18 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: MELF
Mounting: SMD
Tolerance: ±7%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; MELF; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: MELF
Mounting: SMD
Tolerance: ±7%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| 1.5KE440A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 440V; 2.5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 440V; 2.5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 376V
Breakdown voltage: 440V
Max. forward impulse current: 2.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Produkt ist nicht verfügbar
| K3021P |
|
Hersteller: VISHAY
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; DIP6; Ch: 1; K3020P
Mounting: THT
Max. off-state voltage: 5V
Case: DIP6
Manufacturer series: K3020P
Kind of output: without zero voltage crossing driver
Insulation voltage: 3.75kV
Type of optocoupler: optotriac
Output voltage: 400V
Number of channels: 1
Trigger current: 8mA
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; DIP6; Ch: 1; K3020P
Mounting: THT
Max. off-state voltage: 5V
Case: DIP6
Manufacturer series: K3020P
Kind of output: without zero voltage crossing driver
Insulation voltage: 3.75kV
Type of optocoupler: optotriac
Output voltage: 400V
Number of channels: 1
Trigger current: 8mA
auf Bestellung 810 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.12 EUR |
| 87+ | 0.83 EUR |
| 98+ | 0.73 EUR |
| 126+ | 0.57 EUR |
| 133+ | 0.54 EUR |
| CRCW0805110RFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
auf Bestellung 8400 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1900+ | 0.038 EUR |
| 3500+ | 0.021 EUR |
| 5500+ | 0.013 EUR |
| 8400+ | 0.0086 EUR |
| CRCW0805110RJNTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 110Ω; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 110Ω
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Produkt ist nicht verfügbar
| 1N5822-E3/54 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; reel,tape
Max. off-state voltage: 40V
Max. forward voltage: 0.525V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO201AD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 3A; DO201AD; reel,tape
Max. off-state voltage: 40V
Max. forward voltage: 0.525V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 80A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO201AD
auf Bestellung 1288 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 177+ | 0.4 EUR |
| 286+ | 0.25 EUR |
| 357+ | 0.2 EUR |
| 378+ | 0.19 EUR |
| BYV26C-TAP |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Mounting: THT
Case: SOD57
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; SOD57; 30ns
Kind of package: Ammo Pack
Type of diode: rectifying
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Mounting: THT
Case: SOD57
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.3V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
auf Bestellung 14626 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 171+ | 0.42 EUR |
| 203+ | 0.35 EUR |
| 283+ | 0.25 EUR |
| 299+ | 0.24 EUR |
| BYV26C-TR | |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; SOD57; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; fast switching; glass passivated
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 1.3V
Leakage current: 0.1mA
Reverse recovery time: 30ns
auf Bestellung 2108 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 91+ | 0.79 EUR |
| 96+ | 0.75 EUR |
| 106+ | 0.68 EUR |
| 137+ | 0.52 EUR |
| 248+ | 0.29 EUR |
| 262+ | 0.27 EUR |
| BZX85C27-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Kind of package: Ammo Pack
Semiconductor structure: single diode
Zener voltage: 27V
Power dissipation: 1.3W
Type of diode: Zener
Mounting: THT
Case: DO41
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 27V; Ammo Pack; DO41; single diode
Kind of package: Ammo Pack
Semiconductor structure: single diode
Zener voltage: 27V
Power dissipation: 1.3W
Type of diode: Zener
Mounting: THT
Case: DO41
Tolerance: ±5%
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 420+ | 0.17 EUR |
| 1.5KE400A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 400V; 2.7A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 342V
Breakdown voltage: 400V
Max. forward impulse current: 2.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
auf Bestellung 386 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 109+ | 0.66 EUR |
| 122+ | 0.59 EUR |
| 159+ | 0.45 EUR |
| 168+ | 0.43 EUR |
| IRF740APBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.69 EUR |
| 48+ | 1.52 EUR |
| 54+ | 1.34 EUR |
| 60+ | 1.2 EUR |
| 63+ | 1.14 EUR |
| 250+ | 1.13 EUR |
| IRF740ASPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1551 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 39+ | 1.84 EUR |
| 43+ | 1.69 EUR |
| 49+ | 1.49 EUR |
| 57+ | 1.27 EUR |
| 60+ | 1.2 EUR |
| IRF740LCPBF | |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 60+ | 1.2 EUR |
| 68+ | 1.06 EUR |
| 77+ | 0.93 EUR |
| 82+ | 0.87 EUR |
| IRF740PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 65+ | 1.12 EUR |
| 71+ | 1.02 EUR |
| 81+ | 0.89 EUR |
| 85+ | 0.84 EUR |
| 250+ | 0.82 EUR |
| IRF740SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 891 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.94 EUR |
| 41+ | 1.76 EUR |
| 47+ | 1.54 EUR |
| 52+ | 1.39 EUR |
| 55+ | 1.32 EUR |
| 250+ | 1.29 EUR |
| IRF740STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 1.5KE18CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
auf Bestellung 515 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 74+ | 0.97 EUR |
| 139+ | 0.51 EUR |
| 155+ | 0.46 EUR |
| 200+ | 0.36 EUR |
| 212+ | 0.34 EUR |
| 1.5KE180A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 180V; 6.1A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
auf Bestellung 1746 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 158+ | 0.45 EUR |
| 168+ | 0.43 EUR |
| 211+ | 0.34 EUR |
| 223+ | 0.32 EUR |
| 1400+ | 0.31 EUR |
| 1.5KE180CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 154V
Breakdown voltage: 180V
Max. forward impulse current: 6.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 141+ | 0.51 EUR |
| 156+ | 0.46 EUR |
| 203+ | 0.35 EUR |
| 214+ | 0.33 EUR |
| 1.5KE18A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; reel,tape
Type of diode: TVS
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 0.72 EUR |
| P6KE200A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Produkt ist nicht verfügbar
| 1N4937-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO41; Ufmax: 1.2V; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ifsm: 30A; DO41; Ufmax: 1.2V; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
auf Bestellung 8455 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 264+ | 0.27 EUR |
| 313+ | 0.23 EUR |
| 376+ | 0.19 EUR |
| 551+ | 0.13 EUR |
| 849+ | 0.084 EUR |
| 932+ | 0.077 EUR |
| 1446+ | 0.049 EUR |
| 1530+ | 0.047 EUR |
| 1N4937-E3/73 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Leakage current: 0.1mA
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
| SB160-E3/54 |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO41
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 1A; DO41; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: THT
Case: DO41
Max. off-state voltage: 60V
Max. forward voltage: 0.65V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 50A
auf Bestellung 3890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 370+ | 0.19 EUR |
| 530+ | 0.14 EUR |
| 590+ | 0.12 EUR |
| 640+ | 0.11 EUR |
| 2000+ | 0.1 EUR |
| IRLL014TRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.7A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2908 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 1.04 EUR |
| 173+ | 0.41 EUR |
| 182+ | 0.39 EUR |
| 239+ | 0.3 EUR |
| 252+ | 0.28 EUR |
| IRLL110TRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3362 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 175+ | 0.41 EUR |
| 197+ | 0.36 EUR |
| 228+ | 0.31 EUR |
| 241+ | 0.3 EUR |
| 2500+ | 0.29 EUR |