| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI7850DP-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 6.2A; Idm: 40A; 0.9W Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Gate charge: 27nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 6.2A On-state resistance: 22mΩ Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1206Y223KXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 22nF; 100V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 22nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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CRCW06033M30FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.3MΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 3.3MΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
auf Bestellung 18900 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4007GP-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Type of diode: rectifying Features of semiconductor devices: glass passivated Mounting: THT Case: DO41 Capacitance: 8pF |
auf Bestellung 18017 Stücke: Lieferzeit 14-21 Tag (e) |
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VESD05A1-02V-G-08 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 192W; 6.8V; 16A; unidirectional; SOD523; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 192W Max. off-state voltage: 5V Breakdown voltage: 6.8V Max. forward impulse current: 16A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
Produkt ist nicht verfügbar |
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SFH615A-4 | VISHAY |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Mounting: THT Case: DIP4 Insulation voltage: 5.3kV Kind of output: transistor CTR@If: 160-320%@5mA Type of optocoupler: optocoupler Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 2.5µs Number of channels: 1 |
auf Bestellung 1461 Stücke: Lieferzeit 14-21 Tag (e) |
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P6KE15CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; reel,tape; P6KE Type of diode: TVS Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28.3A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.6kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6KE |
auf Bestellung 1388 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW25120000Z0THBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 0Ω; 1W; ±5% Mounting: SMD Resistance: 0Ω Tolerance: ±5% Case - mm: 6432 Case - inch: 2512 Type of resistor: thick film Power: 1W |
auf Bestellung 12830 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF730PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 748 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF730SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: SMD Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 191 Stücke: Lieferzeit 14-21 Tag (e) |
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357B0102MXB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometers Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Power: 1W Tolerance: ±20% Characteristics: linear Potentiometer series: 357 Track material: plastic Mechanical durability: 10000000 cycles Fastening thread: 3/8"x32UNEF Potentiometer features: without limiters Linearity tolerance: ±2% Shaft surface: smooth Thread length: 8mm L shaft length: 22mm Shaft diameter: 6.35mm Shaft length: 14mm |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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357B2102MAB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometers Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Power: 1W Tolerance: ±20% Characteristics: linear Potentiometer series: 357 Track material: plastic Mechanical durability: 10000000 cycles Fastening thread: 3/8"x32UNEF Electrical rotation angle: 340° Linearity tolerance: ±2% Shaft surface: smooth Thread length: 8mm L shaft length: 22mm Shaft diameter: 6.35mm Shaft length: 14mm |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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VJ1206A100KXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
auf Bestellung 3615 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW1206100KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷125°C Type of resistor: thick film Mounting: SMD Resistance: 100kΩ Tolerance: ±1% Power: 0.25W Operating temperature: -55...125°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
auf Bestellung 19520 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW1206100KFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 100kΩ Tolerance: ±1% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
auf Bestellung 101300 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW1206100KJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷125°C Type of resistor: thick film Mounting: SMD Resistance: 100kΩ Tolerance: ±5% Power: 0.25W Operating temperature: -55...125°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
Produkt ist nicht verfügbar |
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CRCW1206100KJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 100kΩ Tolerance: ±5% Power: 0.25W Operating temperature: -55...155°C Max. operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
auf Bestellung 30998 Stücke: Lieferzeit 14-21 Tag (e) |
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SFH6156-3X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 3µs Turn-off time: 2.3µs |
auf Bestellung 1365 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-403CNQ100PBF | VISHAY |
Category: Diode modules Description: Module: diode; double,common cathode; 100V; If: 400A; TO244; screw Type of module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 100V Load current: 400A Case: TO244 Max. forward voltage: 0.82V Max. forward impulse current: 3.3kA Electrical mounting: screw Mechanical mounting: screw Features of semiconductor devices: Schottky |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS85-GS08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 200mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 10pF Max. forward voltage: 0.24V Case: MiniMELF; SOD80 Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W |
auf Bestellung 51270 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS85-GS18 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; MiniMELF,SOD80 Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 10pF Max. forward voltage: 0.8V Case: MiniMELF; SOD80 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.2W |
auf Bestellung 5246 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4840BDY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.9A; 6W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 9.9A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2748 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCLE100E3472JB0 | VISHAY |
Category: THT measurement NTC thermistors Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW Type of sensor: NTC thermistor Resistance: 4.7kΩ Mounting: THT Material constant B: 3977K Operating temperature: -40...125°C Power: 0.5W |
auf Bestellung 1658 Stücke: Lieferzeit 14-21 Tag (e) |
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| P13PAB222MAB17E | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 4.7kΩ; 1.5W; ±20%; 3mm; linear Resistance: 4.7kΩ Mounting: soldered Operating temperature: -55...125°C Tolerance: ±20% Power: 1.5W Temperature coefficient: 150ppm/°C Shaft diameter: 3mm Type of potentiometer: shaft Characteristics: linear Mechanical rotation angle: 300° Electrical rotation angle: 270° Linearity tolerance: ±5% Shaft surface: smooth Track material: cermet Kind of potentiometer: single turn Leads: solder lugs Electrical life: 25000 cycles |
Produkt ist nicht verfügbar |
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| P13PAB472MLB17E | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 4.7kΩ; 750mW; ±20%; 3mm; cermet Resistance: 4.7kΩ Mounting: soldered Operating temperature: -55...125°C Tolerance: ±20% Power: 0.75W Temperature coefficient: 150ppm/°C Shaft diameter: 3mm Type of potentiometer: shaft Characteristics: logarithmic Mechanical rotation angle: 300° Electrical rotation angle: 270° Linearity tolerance: ±5% Shaft surface: smooth Track material: cermet Kind of potentiometer: single turn Leads: solder lugs Electrical life: 25000 cycles |
Produkt ist nicht verfügbar |
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P16NP472MAB15 | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 4.7kΩ; 1W; ±20%; linear; cermet Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 4.7kΩ Tolerance: ±20% Power: 1W Potentiometer features: for industrial use; with knob Characteristics: linear Mounting: soldered Leads: solder lugs Track material: cermet Electrical rotation angle: 270° Operating temperature: -40...85°C IP rating: IP67 Temperature coefficient: 150ppm/°C Knob dimensions: Ø16x8mm Panel cutout diameter: 10mm |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| PA16NP472KAB15 | VISHAY |
Category: Cond. plastic single turn potentiometers Description: Potentiometer: shaft; single turn; 4.7kΩ; ±10%; 500mW; linear; 16mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 4.7kΩ Tolerance: ±10% Power: 0.5W Characteristics: linear Shaft diameter: 16mm Leads: solder lugs Track material: plastic Mechanical rotation angle: 300° Electrical rotation angle: 270° Operating temperature: -40...85°C IP rating: IP67 Mechanical durability: 50000 cycles Temperature coefficient: 500ppm/°C Body material: plastic |
Produkt ist nicht verfügbar |
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P6KE30A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; DO15; reel,tape; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: P6KE |
auf Bestellung 2371 Stücke: Lieferzeit 14-21 Tag (e) |
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PR01000102002JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 20kΩ; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 20kΩ Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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PR01000102000JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 200Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 200Ω Power: 1W Tolerance: ±5% Max. operating voltage: 350V Body dimensions: Ø2.5x8mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
Produkt ist nicht verfügbar |
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1.5KE47A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 47.05V; 23.1A; unidirectional; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 40.2V Breakdown voltage: 47.05V Max. forward impulse current: 23.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
auf Bestellung 1192 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE47CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Max. off-state voltage: 40.2V Breakdown voltage: 47.05V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
Produkt ist nicht verfügbar |
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| SIHA25N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHB25N50E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHG25N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIHP25N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MBR10100-E3/4W | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.65V |
auf Bestellung 654 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4056DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; Idm: 70A; 3.6W; SO8 Kind of package: reel; tape Drain-source voltage: 100V Drain current: 11.1A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 3.6W Polarisation: unipolar Gate charge: 29.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD Case: SO8 |
Produkt ist nicht verfügbar |
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H11A1 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Manufacturer series: H11Ax Collector-emitter voltage: 30V Turn-on time: 10µs Turn-off time: 10µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 50%@10mA Type of optocoupler: optocoupler Mounting: THT Case: DIP6 |
auf Bestellung 1743 Stücke: Lieferzeit 14-21 Tag (e) |
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TEMT1020 | VISHAY |
Category: Phototransistors Description: Phototransistor; λp max: 880nm; 5V; 15°; λd: 730÷1000nm Type of photoelement: phototransistor Wavelength of peak sensitivity: 880nm Collector-emitter voltage: 5V Viewing angle: 15° LED lens: black with IR filter Mounting: SMD Wavelength: 730...1000nm |
auf Bestellung 764 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C12-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode Tolerance: ±5% Mounting: THT Case: DO41 Kind of package: Ammo Pack Zener voltage: 12V Semiconductor structure: single diode Type of diode: Zener Power dissipation: 1.3W |
auf Bestellung 2310 Stücke: Lieferzeit 14-21 Tag (e) |
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TSMF1020 | VISHAY |
Category: IR LEDs Description: IR transmitter; 890nm; transparent; 35mW; 17°; SMD; 100mA; 1.3÷1.5V Mounting: SMD Dimensions: 2.5x2x2.7mm Operating voltage: 1.3...1.5V Type of diode: IR transmitter Wavelength: 890nm LED lens: transparent LED current: 100mA Viewing angle: 17° Optical power: 35mW |
Produkt ist nicht verfügbar |
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BZX85C5V1-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 5.1V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 8630 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 2321 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Pulsed drain current: 0.8A Power dissipation: 80mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1779 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIA456DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 2A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±16V On-state resistance: 1.38Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIA416DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.3A Pulsed drain current: 15A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 83mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIA421DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -35A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIA427ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W Mounting: SMD Case: PowerPAK® SC70 Kind of package: reel; tape Power dissipation: 12W Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -50A Drain-source voltage: -8V Drain current: -12A On-state resistance: 16mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| SIA431DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W Case: PowerPAK® SC70 Mounting: SMD Kind of package: reel; tape Drain current: -12A Drain-source voltage: -20V Power dissipation: 12W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -30A On-state resistance: 25mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |
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| SIA440DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Pulsed drain current: 50A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 26mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIA446DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 7.7A Pulsed drain current: 10A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 177mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIA449DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -30A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIA483DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -40A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| SIA447DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -12A Pulsed drain current: -50A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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TLLR4400 | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; red; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4V Type of diode: LED LED diameter: 3mm LED colour: red Luminosity: 0.63...1.2mcd Viewing angle: 50° Wavelength: 612...625nm LED lens: diffused; red LED current: 2mA Mounting: THT Front: convex Number of terminals: 2 Terminal pitch: 2.54mm Operating voltage: 1.9...2.4V |
auf Bestellung 3345 Stücke: Lieferzeit 14-21 Tag (e) |
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TLLR4400-AS12Z | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; red; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4V Type of diode: LED LED diameter: 3mm LED colour: red Luminosity: 0.63...1.2mcd Viewing angle: 25° Wavelength: 612...625nm LED lens: diffused; red LED current: 2mA Mounting: THT Front: convex Number of terminals: 2 Terminal pitch: 2.54mm Operating voltage: 1.9...2.4V |
Produkt ist nicht verfügbar |
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TLLR4401 | VISHAY |
Category: THT LEDs Round Description: LED; 3mm; red; 1÷2mcd; 50°; Front: convex; 1.9÷2.4V; No.of term: 2 Type of diode: LED LED diameter: 3mm LED colour: red Luminosity: 1...2mcd Viewing angle: 50° Wavelength: 612...625nm LED lens: diffused; red LED current: 2mA Mounting: THT Front: convex Number of terminals: 2 Terminal pitch: 2.54mm Operating voltage: 1.9...2.4V |
auf Bestellung 643 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY74-2H | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Collector-emitter voltage: 70V Case: DIP8 Turn-on time: 6µs Turn-off time: 6µs |
auf Bestellung 2797 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SI7850DP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; Idm: 40A; 0.9W
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 6.2A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.2A; Idm: 40A; 0.9W
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 27nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 6.2A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 33+ | 2.17 EUR |
| 38+ | 1.9 EUR |
| 72+ | 1 EUR |
| 76+ | 0.94 EUR |
| VJ1206Y223KXBCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 22nF; 100V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 22nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| CRCW06033M30FKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.3MΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.3MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.3MΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 3.3MΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
auf Bestellung 18900 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2200+ | 0.034 EUR |
| 4100+ | 0.018 EUR |
| 6900+ | 0.01 EUR |
| 17200+ | 0.0042 EUR |
| 1N4007GP-E3/54 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Mounting: THT
Case: DO41
Capacitance: 8pF
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Mounting: THT
Case: DO41
Capacitance: 8pF
auf Bestellung 18017 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 66+ | 1.09 EUR |
| 88+ | 0.82 EUR |
| 131+ | 0.55 EUR |
| 175+ | 0.41 EUR |
| 532+ | 0.13 EUR |
| VESD05A1-02V-G-08 |
|
Hersteller: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 192W; 6.8V; 16A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 192W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 192W; 6.8V; 16A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 192W
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Produkt ist nicht verfügbar
| SFH615A-4 | |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Mounting: THT
Case: DIP4
Insulation voltage: 5.3kV
Kind of output: transistor
CTR@If: 160-320%@5mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 2.5µs
Number of channels: 1
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Mounting: THT
Case: DIP4
Insulation voltage: 5.3kV
Kind of output: transistor
CTR@If: 160-320%@5mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 2.5µs
Number of channels: 1
auf Bestellung 1461 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 240+ | 0.3 EUR |
| 290+ | 0.25 EUR |
| 325+ | 0.22 EUR |
| 345+ | 0.21 EUR |
| 1000+ | 0.2 EUR |
| P6KE15CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 15V; 28.3A; bidirectional; DO15; 600W; reel,tape; P6KE
Type of diode: TVS
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28.3A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
auf Bestellung 1388 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 278+ | 0.26 EUR |
| 343+ | 0.21 EUR |
| 363+ | 0.2 EUR |
| CRCW25120000Z0THBC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 0Ω; 1W; ±5%
Mounting: SMD
Resistance: 0Ω
Tolerance: ±5%
Case - mm: 6432
Case - inch: 2512
Type of resistor: thick film
Power: 1W
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 0Ω; 1W; ±5%
Mounting: SMD
Resistance: 0Ω
Tolerance: ±5%
Case - mm: 6432
Case - inch: 2512
Type of resistor: thick film
Power: 1W
auf Bestellung 12830 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 490+ | 0.15 EUR |
| 1090+ | 0.066 EUR |
| 2100+ | 0.034 EUR |
| 2220+ | 0.032 EUR |
| IRF730PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 748 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 58+ | 1.24 EUR |
| 78+ | 0.92 EUR |
| 97+ | 0.74 EUR |
| 103+ | 0.7 EUR |
| IRF730SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 1.22 EUR |
| 65+ | 1.12 EUR |
| 80+ | 0.9 EUR |
| 85+ | 0.84 EUR |
| 357B0102MXB251S22 |
|
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Characteristics: linear
Potentiometer series: 357
Track material: plastic
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Potentiometer features: without limiters
Linearity tolerance: ±2%
Shaft surface: smooth
Thread length: 8mm
L shaft length: 22mm
Shaft diameter: 6.35mm
Shaft length: 14mm
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Characteristics: linear
Potentiometer series: 357
Track material: plastic
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Potentiometer features: without limiters
Linearity tolerance: ±2%
Shaft surface: smooth
Thread length: 8mm
L shaft length: 22mm
Shaft diameter: 6.35mm
Shaft length: 14mm
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 37.48 EUR |
| 3+ | 35.44 EUR |
| 50+ | 34.86 EUR |
| 357B2102MAB251S22 |
|
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Characteristics: linear
Potentiometer series: 357
Track material: plastic
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Linearity tolerance: ±2%
Shaft surface: smooth
Thread length: 8mm
L shaft length: 22mm
Shaft diameter: 6.35mm
Shaft length: 14mm
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Power: 1W
Tolerance: ±20%
Characteristics: linear
Potentiometer series: 357
Track material: plastic
Mechanical durability: 10000000 cycles
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Linearity tolerance: ±2%
Shaft surface: smooth
Thread length: 8mm
L shaft length: 22mm
Shaft diameter: 6.35mm
Shaft length: 14mm
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 36.69 EUR |
| 3+ | 34.69 EUR |
| VJ1206A100KXAAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
auf Bestellung 3615 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 140+ | 0.51 EUR |
| 360+ | 0.2 EUR |
| 770+ | 0.094 EUR |
| 810+ | 0.088 EUR |
| CRCW1206100KFKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...125°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...125°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 19520 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1430+ | 0.05 EUR |
| 2560+ | 0.028 EUR |
| 4320+ | 0.017 EUR |
| 5500+ | 0.013 EUR |
| 5820+ | 0.012 EUR |
| CRCW1206100KFKTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±1%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 101300 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2700+ | 0.027 EUR |
| 5800+ | 0.012 EUR |
| 7500+ | 0.0097 EUR |
| 16700+ | 0.0043 EUR |
| 17600+ | 0.0041 EUR |
| CRCW1206100KJNEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...125°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...125°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Produkt ist nicht verfügbar
| CRCW1206100KJNTABC |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 100kΩ
Tolerance: ±5%
Power: 0.25W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
auf Bestellung 30998 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.024 EUR |
| 6100+ | 0.012 EUR |
| 7700+ | 0.0094 EUR |
| 17200+ | 0.0042 EUR |
| 18600+ | 0.0038 EUR |
| SFH6156-3X001T |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 77+ | 0.93 EUR |
| 176+ | 0.41 EUR |
| 332+ | 0.22 EUR |
| 350+ | 0.2 EUR |
| VS-403CNQ100PBF |
|
Hersteller: VISHAY
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 400A; TO244; screw
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 100V
Load current: 400A
Case: TO244
Max. forward voltage: 0.82V
Max. forward impulse current: 3.3kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double,common cathode; 100V; If: 400A; TO244; screw
Type of module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 100V
Load current: 400A
Case: TO244
Max. forward voltage: 0.82V
Max. forward impulse current: 3.3kA
Electrical mounting: screw
Mechanical mounting: screw
Features of semiconductor devices: Schottky
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 83.61 EUR |
| BAS85-GS08 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.24V
Case: MiniMELF; SOD80
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; MiniMELF,SOD80; 200mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.24V
Case: MiniMELF; SOD80
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
auf Bestellung 51270 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 570+ | 0.13 EUR |
| 1055+ | 0.068 EUR |
| 1320+ | 0.054 EUR |
| 1400+ | 0.051 EUR |
| 10000+ | 0.049 EUR |
| BAS85-GS18 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; MiniMELF,SOD80
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: MiniMELF; SOD80
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; MiniMELF,SOD80
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: MiniMELF; SOD80
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
auf Bestellung 5246 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 665+ | 0.11 EUR |
| 1055+ | 0.068 EUR |
| 1375+ | 0.052 EUR |
| 1455+ | 0.049 EUR |
| SI4840BDY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.9A; 6W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.9A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.9A; 6W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.9A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2748 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 1.36 EUR |
| 73+ | 0.99 EUR |
| 87+ | 0.83 EUR |
| 91+ | 0.79 EUR |
| 500+ | 0.75 EUR |
| NTCLE100E3472JB0 |
|
Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Type of sensor: NTC thermistor
Resistance: 4.7kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Power: 0.5W
auf Bestellung 1658 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 75+ | 0.97 EUR |
| 136+ | 0.53 EUR |
| 198+ | 0.36 EUR |
| 210+ | 0.34 EUR |
| P13PAB222MAB17E |
|
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 1.5W; ±20%; 3mm; linear
Resistance: 4.7kΩ
Mounting: soldered
Operating temperature: -55...125°C
Tolerance: ±20%
Power: 1.5W
Temperature coefficient: 150ppm/°C
Shaft diameter: 3mm
Type of potentiometer: shaft
Characteristics: linear
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Linearity tolerance: ±5%
Shaft surface: smooth
Track material: cermet
Kind of potentiometer: single turn
Leads: solder lugs
Electrical life: 25000 cycles
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 1.5W; ±20%; 3mm; linear
Resistance: 4.7kΩ
Mounting: soldered
Operating temperature: -55...125°C
Tolerance: ±20%
Power: 1.5W
Temperature coefficient: 150ppm/°C
Shaft diameter: 3mm
Type of potentiometer: shaft
Characteristics: linear
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Linearity tolerance: ±5%
Shaft surface: smooth
Track material: cermet
Kind of potentiometer: single turn
Leads: solder lugs
Electrical life: 25000 cycles
Produkt ist nicht verfügbar
| P13PAB472MLB17E |
|
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 750mW; ±20%; 3mm; cermet
Resistance: 4.7kΩ
Mounting: soldered
Operating temperature: -55...125°C
Tolerance: ±20%
Power: 0.75W
Temperature coefficient: 150ppm/°C
Shaft diameter: 3mm
Type of potentiometer: shaft
Characteristics: logarithmic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Linearity tolerance: ±5%
Shaft surface: smooth
Track material: cermet
Kind of potentiometer: single turn
Leads: solder lugs
Electrical life: 25000 cycles
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 750mW; ±20%; 3mm; cermet
Resistance: 4.7kΩ
Mounting: soldered
Operating temperature: -55...125°C
Tolerance: ±20%
Power: 0.75W
Temperature coefficient: 150ppm/°C
Shaft diameter: 3mm
Type of potentiometer: shaft
Characteristics: logarithmic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Linearity tolerance: ±5%
Shaft surface: smooth
Track material: cermet
Kind of potentiometer: single turn
Leads: solder lugs
Electrical life: 25000 cycles
Produkt ist nicht verfügbar
| P16NP472MAB15 |
|
Hersteller: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 1W; ±20%; linear; cermet
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 1W
Potentiometer features: for industrial use; with knob
Characteristics: linear
Mounting: soldered
Leads: solder lugs
Track material: cermet
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Temperature coefficient: 150ppm/°C
Knob dimensions: Ø16x8mm
Panel cutout diameter: 10mm
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 1W; ±20%; linear; cermet
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±20%
Power: 1W
Potentiometer features: for industrial use; with knob
Characteristics: linear
Mounting: soldered
Leads: solder lugs
Track material: cermet
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Temperature coefficient: 150ppm/°C
Knob dimensions: Ø16x8mm
Panel cutout diameter: 10mm
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 15.74 EUR |
| PA16NP472KAB15 |
|
Hersteller: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±10%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±10%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; ±10%; 500mW; linear; 16mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 4.7kΩ
Tolerance: ±10%
Power: 0.5W
Characteristics: linear
Shaft diameter: 16mm
Leads: solder lugs
Track material: plastic
Mechanical rotation angle: 300°
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Mechanical durability: 50000 cycles
Temperature coefficient: 500ppm/°C
Body material: plastic
Produkt ist nicht verfügbar
| P6KE30A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; DO15; reel,tape; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; DO15; reel,tape; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: P6KE
auf Bestellung 2371 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 145+ | 0.5 EUR |
| 281+ | 0.25 EUR |
| 371+ | 0.19 EUR |
| 393+ | 0.18 EUR |
| PR01000102002JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 20kΩ; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 20kΩ
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 20kΩ; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 20kΩ
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| PR01000102000JA100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 200Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 200Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 200Ω; 1W; ±5%; Ø2.5x8mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 200Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 350V
Body dimensions: Ø2.5x8mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Produkt ist nicht verfügbar
| 1.5KE47A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 47.05V; 23.1A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 47.05V; 23.1A; unidirectional; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
auf Bestellung 1192 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 175+ | 0.41 EUR |
| 213+ | 0.34 EUR |
| 225+ | 0.32 EUR |
| 1.5KE47CA-E3/54 |
|
Hersteller: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Produkt ist nicht verfügbar
| SIHA25N50E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHB25N50E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHG25N50E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIHP25N50E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MBR10100-E3/4W |
|
Hersteller: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.65V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.65V
auf Bestellung 654 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| 73+ | 0.98 EUR |
| 82+ | 0.87 EUR |
| 96+ | 0.75 EUR |
| 102+ | 0.71 EUR |
| SI4056DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; Idm: 70A; 3.6W; SO8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Gate charge: 29.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.1A; Idm: 70A; 3.6W; SO8
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 11.1A
On-state resistance: 23mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.6W
Polarisation: unipolar
Gate charge: 29.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Case: SO8
Produkt ist nicht verfügbar
| H11A1 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Manufacturer series: H11Ax
Collector-emitter voltage: 30V
Turn-on time: 10µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Manufacturer series: H11Ax
Collector-emitter voltage: 30V
Turn-on time: 10µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
auf Bestellung 1743 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 115+ | 0.62 EUR |
| 178+ | 0.4 EUR |
| 188+ | 0.38 EUR |
| TEMT1020 |
|
Hersteller: VISHAY
Category: Phototransistors
Description: Phototransistor; λp max: 880nm; 5V; 15°; λd: 730÷1000nm
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
Collector-emitter voltage: 5V
Viewing angle: 15°
LED lens: black with IR filter
Mounting: SMD
Wavelength: 730...1000nm
Category: Phototransistors
Description: Phototransistor; λp max: 880nm; 5V; 15°; λd: 730÷1000nm
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
Collector-emitter voltage: 5V
Viewing angle: 15°
LED lens: black with IR filter
Mounting: SMD
Wavelength: 730...1000nm
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 132+ | 0.54 EUR |
| 196+ | 0.37 EUR |
| 241+ | 0.3 EUR |
| 269+ | 0.27 EUR |
| 278+ | 0.26 EUR |
| 285+ | 0.25 EUR |
| BZX85C12-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode
Tolerance: ±5%
Mounting: THT
Case: DO41
Kind of package: Ammo Pack
Zener voltage: 12V
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 1.3W
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode
Tolerance: ±5%
Mounting: THT
Case: DO41
Kind of package: Ammo Pack
Zener voltage: 12V
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 1.3W
auf Bestellung 2310 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 550+ | 0.13 EUR |
| 1110+ | 0.065 EUR |
| 1240+ | 0.058 EUR |
| 1400+ | 0.051 EUR |
| 1480+ | 0.048 EUR |
| TSMF1020 |
|
Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 890nm; transparent; 35mW; 17°; SMD; 100mA; 1.3÷1.5V
Mounting: SMD
Dimensions: 2.5x2x2.7mm
Operating voltage: 1.3...1.5V
Type of diode: IR transmitter
Wavelength: 890nm
LED lens: transparent
LED current: 100mA
Viewing angle: 17°
Optical power: 35mW
Category: IR LEDs
Description: IR transmitter; 890nm; transparent; 35mW; 17°; SMD; 100mA; 1.3÷1.5V
Mounting: SMD
Dimensions: 2.5x2x2.7mm
Operating voltage: 1.3...1.5V
Type of diode: IR transmitter
Wavelength: 890nm
LED lens: transparent
LED current: 100mA
Viewing angle: 17°
Optical power: 35mW
Produkt ist nicht verfügbar
| BZX85C5V1-TAP |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
auf Bestellung 8630 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 750+ | 0.096 EUR |
| 1180+ | 0.061 EUR |
| 1320+ | 0.054 EUR |
| 1490+ | 0.048 EUR |
| 1570+ | 0.046 EUR |
| 5000+ | 0.044 EUR |
| IRF540PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2321 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.07 EUR |
| 73+ | 0.99 EUR |
| 78+ | 0.92 EUR |
| 88+ | 0.82 EUR |
| 93+ | 0.77 EUR |
| 250+ | 0.74 EUR |
| IRF540SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.76 EUR |
| 2N7002-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.08W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 80mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1779 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 215+ | 0.34 EUR |
| 370+ | 0.19 EUR |
| 535+ | 0.13 EUR |
| SIA456DJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 2A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±16V
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 2A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±16V
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIA416DJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.3A
Pulsed drain current: 15A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.3A
Pulsed drain current: 15A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIA421DJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIA427ADJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W
Mounting: SMD
Case: PowerPAK® SC70
Kind of package: reel; tape
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -50A
Drain-source voltage: -8V
Drain current: -12A
On-state resistance: 16mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W
Mounting: SMD
Case: PowerPAK® SC70
Kind of package: reel; tape
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -50A
Drain-source voltage: -8V
Drain current: -12A
On-state resistance: 16mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| SIA431DJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W
Case: PowerPAK® SC70
Mounting: SMD
Kind of package: reel; tape
Drain current: -12A
Drain-source voltage: -20V
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -30A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W
Case: PowerPAK® SC70
Mounting: SMD
Kind of package: reel; tape
Drain current: -12A
Drain-source voltage: -20V
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -30A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
| SIA440DJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIA446DJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 177mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 177mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIA449DJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIA483DJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -40A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SIA447DJ-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TLLR4400 |
|
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; red; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4V
Type of diode: LED
LED diameter: 3mm
LED colour: red
Luminosity: 0.63...1.2mcd
Viewing angle: 50°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Number of terminals: 2
Terminal pitch: 2.54mm
Operating voltage: 1.9...2.4V
Category: THT LEDs Round
Description: LED; 3mm; red; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4V
Type of diode: LED
LED diameter: 3mm
LED colour: red
Luminosity: 0.63...1.2mcd
Viewing angle: 50°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Number of terminals: 2
Terminal pitch: 2.54mm
Operating voltage: 1.9...2.4V
auf Bestellung 3345 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 300+ | 0.24 EUR |
| 424+ | 0.17 EUR |
| 633+ | 0.11 EUR |
| TLLR4400-AS12Z |
|
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; red; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4V
Type of diode: LED
LED diameter: 3mm
LED colour: red
Luminosity: 0.63...1.2mcd
Viewing angle: 25°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Number of terminals: 2
Terminal pitch: 2.54mm
Operating voltage: 1.9...2.4V
Category: THT LEDs Round
Description: LED; 3mm; red; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4V
Type of diode: LED
LED diameter: 3mm
LED colour: red
Luminosity: 0.63...1.2mcd
Viewing angle: 25°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Number of terminals: 2
Terminal pitch: 2.54mm
Operating voltage: 1.9...2.4V
Produkt ist nicht verfügbar
| TLLR4401 |
|
Hersteller: VISHAY
Category: THT LEDs Round
Description: LED; 3mm; red; 1÷2mcd; 50°; Front: convex; 1.9÷2.4V; No.of term: 2
Type of diode: LED
LED diameter: 3mm
LED colour: red
Luminosity: 1...2mcd
Viewing angle: 50°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Number of terminals: 2
Terminal pitch: 2.54mm
Operating voltage: 1.9...2.4V
Category: THT LEDs Round
Description: LED; 3mm; red; 1÷2mcd; 50°; Front: convex; 1.9÷2.4V; No.of term: 2
Type of diode: LED
LED diameter: 3mm
LED colour: red
Luminosity: 1...2mcd
Viewing angle: 50°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Number of terminals: 2
Terminal pitch: 2.54mm
Operating voltage: 1.9...2.4V
auf Bestellung 643 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 152+ | 0.47 EUR |
| 300+ | 0.24 EUR |
| 424+ | 0.17 EUR |
| 610+ | 0.12 EUR |
| 643+ | 0.11 EUR |
| CNY74-2H |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 70V
Case: DIP8
Turn-on time: 6µs
Turn-off time: 6µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 70V
Case: DIP8
Turn-on time: 6µs
Turn-off time: 6µs
auf Bestellung 2797 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 65+ | 1.1 EUR |
| 143+ | 0.5 EUR |
| 190+ | 0.38 EUR |
| 222+ | 0.32 EUR |
| 229+ | 0.31 EUR |
| 235+ | 0.3 EUR |
| 500+ | 0.29 EUR |